WO2008128122A3 - Formation of photovoltaic absorber layers on foil substrates - Google Patents

Formation of photovoltaic absorber layers on foil substrates Download PDF

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Publication number
WO2008128122A3
WO2008128122A3 PCT/US2008/060141 US2008060141W WO2008128122A3 WO 2008128122 A3 WO2008128122 A3 WO 2008128122A3 US 2008060141 W US2008060141 W US 2008060141W WO 2008128122 A3 WO2008128122 A3 WO 2008128122A3
Authority
WO
WIPO (PCT)
Prior art keywords
formation
absorber layers
photovoltaic absorber
foil substrates
absorber layer
Prior art date
Application number
PCT/US2008/060141
Other languages
French (fr)
Other versions
WO2008128122A2 (en
Inventor
Craig Leidholm
Brent Bollman
Yann Roussillon
Original Assignee
Craig Leidholm
Brent Bollman
Yann Roussillon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/060,221 external-priority patent/US20090032108A1/en
Application filed by Craig Leidholm, Brent Bollman, Yann Roussillon filed Critical Craig Leidholm
Priority to EP08745698A priority Critical patent/EP2179449A2/en
Publication of WO2008128122A2 publication Critical patent/WO2008128122A2/en
Publication of WO2008128122A3 publication Critical patent/WO2008128122A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200°C and about 600°C and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.
PCT/US2008/060141 2007-04-11 2008-04-11 Formation of photovoltaic absorber layers on foil substrates WO2008128122A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08745698A EP2179449A2 (en) 2007-04-11 2008-04-11 Formation of photovoltaic absorber layers on foil substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US91125907P 2007-04-11 2007-04-11
US60/911,259 2007-04-11
US12/060,221 2008-03-31
US12/060,221 US20090032108A1 (en) 2007-03-30 2008-03-31 Formation of photovoltaic absorber layers on foil substrates

Publications (2)

Publication Number Publication Date
WO2008128122A2 WO2008128122A2 (en) 2008-10-23
WO2008128122A3 true WO2008128122A3 (en) 2008-12-18

Family

ID=42046253

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/060141 WO2008128122A2 (en) 2007-04-11 2008-04-11 Formation of photovoltaic absorber layers on foil substrates

Country Status (2)

Country Link
EP (1) EP2179449A2 (en)
WO (1) WO2008128122A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2399295B1 (en) * 2009-02-20 2019-04-10 Beijing Apollo Ding rong Solar Technology Co., Ltd. Protective layer for large-scale production of thin-film solar cells

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6323417B1 (en) * 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US7026258B2 (en) * 2002-04-29 2006-04-11 Electricite De France Service National Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002084708A2 (en) 2001-04-16 2002-10-24 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6368892B1 (en) * 1997-07-28 2002-04-09 Bp Corporation North America Inc. Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6323417B1 (en) * 1998-09-29 2001-11-27 Lockheed Martin Corporation Method of making I-III-VI semiconductor materials for use in photovoltaic cells
US7026258B2 (en) * 2002-04-29 2006-04-11 Electricite De France Service National Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications

Also Published As

Publication number Publication date
WO2008128122A2 (en) 2008-10-23
EP2179449A2 (en) 2010-04-28

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