WO2008120418A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- WO2008120418A1 WO2008120418A1 PCT/JP2007/073308 JP2007073308W WO2008120418A1 WO 2008120418 A1 WO2008120418 A1 WO 2008120418A1 JP 2007073308 W JP2007073308 W JP 2007073308W WO 2008120418 A1 WO2008120418 A1 WO 2008120418A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- semiconductor device
- source
- drain
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/514,933 US8278685B2 (en) | 2007-04-02 | 2007-12-03 | Semiconductor device used with high frequency band |
KR1020097008283A KR101156779B1 (ko) | 2007-04-02 | 2007-12-03 | 반도체 장치 및 그 제조 방법 |
EP07832928A EP2133909A4 (en) | 2007-04-02 | 2007-12-03 | SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-096851 | 2007-04-02 | ||
JP2007096851A JP5100185B2 (ja) | 2007-04-02 | 2007-04-02 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008120418A1 true WO2008120418A1 (ja) | 2008-10-09 |
Family
ID=39808006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/073308 WO2008120418A1 (ja) | 2007-04-02 | 2007-12-03 | 半導体装置およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8278685B2 (ja) |
EP (1) | EP2133909A4 (ja) |
JP (1) | JP5100185B2 (ja) |
KR (1) | KR101156779B1 (ja) |
TW (1) | TWI385788B (ja) |
WO (1) | WO2008120418A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010068872A1 (en) * | 2008-12-12 | 2010-06-17 | Qualcomm Incorporated | Via first plus via last technique for ic interconnect |
CN106847679A (zh) * | 2015-10-09 | 2017-06-13 | 英飞凌科技股份有限公司 | 通过去除非晶化的部分来制造碳化硅半导体器件的方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8143654B1 (en) * | 2008-01-16 | 2012-03-27 | Triquint Semiconductor, Inc. | Monolithic microwave integrated circuit with diamond layer |
US20110018013A1 (en) * | 2009-07-21 | 2011-01-27 | Koninklijke Philips Electronics N.V. | Thin-film flip-chip series connected leds |
JP5631607B2 (ja) * | 2009-08-21 | 2014-11-26 | 株式会社東芝 | マルチチップモジュール構造を有する高周波回路 |
CN102263192B (zh) * | 2010-05-31 | 2016-02-03 | 精材科技股份有限公司 | 发光二极管次基板、发光二极管封装及其制造方法 |
JP5649357B2 (ja) * | 2010-07-30 | 2015-01-07 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び製造方法 |
JP5760394B2 (ja) * | 2010-11-05 | 2015-08-12 | 三菱電機株式会社 | ビアホールの製造方法およびビアホールを有する半導体素子の製造方法 |
US8853857B2 (en) | 2011-05-05 | 2014-10-07 | International Business Machines Corporation | 3-D integration using multi stage vias |
KR101813180B1 (ko) * | 2011-06-28 | 2017-12-29 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
WO2013136422A1 (ja) * | 2012-03-12 | 2013-09-19 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
KR101988893B1 (ko) | 2012-12-12 | 2019-09-30 | 한국전자통신연구원 | 반도체 소자 및 이를 제조하는 방법 |
US10672877B2 (en) * | 2018-02-06 | 2020-06-02 | Integrated Device Technology, Inc. | Method of boosting RON*COFF performance |
US10629526B1 (en) | 2018-10-11 | 2020-04-21 | Nxp Usa, Inc. | Transistor with non-circular via connections in two orientations |
JP2021052025A (ja) * | 2019-09-20 | 2021-04-01 | 富士通株式会社 | 半導体装置、半導体装置の製造方法及び電子装置 |
US11356070B2 (en) | 2020-06-01 | 2022-06-07 | Wolfspeed, Inc. | RF amplifiers having shielded transmission line structures |
US11670605B2 (en) | 2020-04-03 | 2023-06-06 | Wolfspeed, Inc. | RF amplifier devices including interconnect structures and methods of manufacturing |
US11837457B2 (en) * | 2020-09-11 | 2023-12-05 | Wolfspeed, Inc. | Packaging for RF transistor amplifiers |
US20240096968A1 (en) * | 2021-02-17 | 2024-03-21 | Mitsubishi Electric Corporation | Nitride semiconductor device and method for manufacturing nitride semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211962A (ja) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | 高周波半導体装置の製造方法 |
JPS63278368A (ja) * | 1987-05-11 | 1988-11-16 | Nec Corp | 半導体基板のバイアホ−ル形成方法 |
JPH02307219A (ja) * | 1989-05-23 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体素子の電極の製造方法 |
JPH06326064A (ja) * | 1993-05-14 | 1994-11-25 | Nec Corp | 半導体装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07118619B2 (ja) | 1989-04-27 | 1995-12-18 | 三菱電機株式会社 | 抵抗帰還型増幅器 |
JPH06310547A (ja) * | 1993-02-25 | 1994-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5343071A (en) | 1993-04-28 | 1994-08-30 | Raytheon Company | Semiconductor structures having dual surface via holes |
JP2001028425A (ja) * | 1999-07-15 | 2001-01-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2002026270A (ja) * | 2000-07-10 | 2002-01-25 | Nec Corp | 半導体装置の製造方法 |
JP2002217194A (ja) * | 2001-01-15 | 2002-08-02 | Hitachi Ltd | 半導体装置 |
JP2003078127A (ja) * | 2001-08-31 | 2003-03-14 | Kyocera Corp | 半導体装置およびその製造方法 |
US7378342B2 (en) | 2004-08-27 | 2008-05-27 | Micron Technology, Inc. | Methods for forming vias varying lateral dimensions |
EP1693891B1 (en) * | 2005-01-31 | 2019-07-31 | IMEC vzw | Method of manufacturing a semiconductor device |
JP4821214B2 (ja) * | 2005-08-26 | 2011-11-24 | 三菱電機株式会社 | カスコード接続回路 |
-
2007
- 2007-04-02 JP JP2007096851A patent/JP5100185B2/ja not_active Expired - Fee Related
- 2007-12-03 KR KR1020097008283A patent/KR101156779B1/ko not_active IP Right Cessation
- 2007-12-03 EP EP07832928A patent/EP2133909A4/en not_active Withdrawn
- 2007-12-03 WO PCT/JP2007/073308 patent/WO2008120418A1/ja active Application Filing
- 2007-12-03 US US12/514,933 patent/US8278685B2/en not_active Expired - Fee Related
- 2007-12-17 TW TW096148277A patent/TWI385788B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62211962A (ja) * | 1986-03-12 | 1987-09-17 | Fujitsu Ltd | 高周波半導体装置の製造方法 |
JPS63278368A (ja) * | 1987-05-11 | 1988-11-16 | Nec Corp | 半導体基板のバイアホ−ル形成方法 |
JPH02307219A (ja) * | 1989-05-23 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体素子の電極の製造方法 |
JPH06326064A (ja) * | 1993-05-14 | 1994-11-25 | Nec Corp | 半導体装置及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2133909A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010068872A1 (en) * | 2008-12-12 | 2010-06-17 | Qualcomm Incorporated | Via first plus via last technique for ic interconnect |
US7939926B2 (en) | 2008-12-12 | 2011-05-10 | Qualcomm Incorporated | Via first plus via last technique for IC interconnects |
US7985620B2 (en) | 2008-12-12 | 2011-07-26 | Qualcomm Incorporated | Method of fabricating via first plus via last IC interconnect |
US8076768B2 (en) | 2008-12-12 | 2011-12-13 | Qualcomm Incorporated | IC interconnect |
CN106847679A (zh) * | 2015-10-09 | 2017-06-13 | 英飞凌科技股份有限公司 | 通过去除非晶化的部分来制造碳化硅半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101156779B1 (ko) | 2012-06-18 |
US20100059791A1 (en) | 2010-03-11 |
US8278685B2 (en) | 2012-10-02 |
TW200841455A (en) | 2008-10-16 |
EP2133909A4 (en) | 2011-03-16 |
KR20090084825A (ko) | 2009-08-05 |
JP2008258281A (ja) | 2008-10-23 |
EP2133909A1 (en) | 2009-12-16 |
JP5100185B2 (ja) | 2012-12-19 |
TWI385788B (zh) | 2013-02-11 |
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