WO2008117679A1 - 抵抗変化素子およびその製造方法、並びに電子デバイス - Google Patents

抵抗変化素子およびその製造方法、並びに電子デバイス Download PDF

Info

Publication number
WO2008117679A1
WO2008117679A1 PCT/JP2008/054739 JP2008054739W WO2008117679A1 WO 2008117679 A1 WO2008117679 A1 WO 2008117679A1 JP 2008054739 W JP2008054739 W JP 2008054739W WO 2008117679 A1 WO2008117679 A1 WO 2008117679A1
Authority
WO
WIPO (PCT)
Prior art keywords
variable resistance
resistance element
electrically conductive
manufacturing
electronic device
Prior art date
Application number
PCT/JP2008/054739
Other languages
English (en)
French (fr)
Inventor
Ayuka Tada
Kimihiko Ito
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009506285A priority Critical patent/JP5387403B2/ja
Priority to US12/532,666 priority patent/US20100038619A1/en
Publication of WO2008117679A1 publication Critical patent/WO2008117679A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Adjustable Resistors (AREA)

Abstract

　第１の導電部と、第１の導電部上に設けられた絶縁膜パターンと、この絶縁膜パターンにより形成された第１の導電部上面に対する段差と、この段差の側面に設けられ、その段差側面の下端側で第１の導電部上面に接する抵抗変化膜と、前記段差の側面の上端側で前記抵抗変化膜に接する第２の導電部とを有する抵抗変化素子。
PCT/JP2008/054739 2007-03-28 2008-03-14 抵抗変化素子およびその製造方法、並びに電子デバイス WO2008117679A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009506285A JP5387403B2 (ja) 2007-03-28 2008-03-14 電子デバイス及びその製造方法
US12/532,666 US20100038619A1 (en) 2007-03-28 2008-03-14 Variable resistance element, manufacturing method thereof, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-084569 2007-03-28
JP2007084569 2007-03-28

Publications (1)

Publication Number Publication Date
WO2008117679A1 true WO2008117679A1 (ja) 2008-10-02

Family

ID=39788415

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054739 WO2008117679A1 (ja) 2007-03-28 2008-03-14 抵抗変化素子およびその製造方法、並びに電子デバイス

Country Status (3)

Country Link
US (1) US20100038619A1 (ja)
JP (1) JP5387403B2 (ja)
WO (1) WO2008117679A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009084514A1 (ja) * 2007-12-27 2009-07-09 Nec Corporation 記憶素子、半導体記憶装置、および情報読み出し方法
JP2013530525A (ja) * 2010-05-25 2013-07-25 マイクロン テクノロジー， インク． 抵抗変化型メモリセル構造および方法
TWI503964B (zh) * 2013-03-13 2015-10-11 Winbond Electronics Corp 電阻式非揮發性記憶體裝置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR20110015256A (ko) * 2009-08-07 2011-02-15 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 프로그램 방법
US8570786B2 (en) 2011-07-07 2013-10-29 Kabushiki Kaisha Toshiba Memory device and fabricating method thereof
US9548115B2 (en) * 2012-03-16 2017-01-17 Nec Corporation Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element
JP6208971B2 (ja) 2012-09-14 2017-10-04 ルネサスエレクトロニクス株式会社 半導体装置、及び半導体装置の製造方法
KR102293859B1 (ko) 2014-12-22 2021-08-25 삼성전자주식회사 가변 저항 메모리 소자 및 이의 제조 방법
CN110752291B (zh) * 2019-09-18 2023-04-18 杭州未名信科科技有限公司 一种侧壁电极阻变存储结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241535A (ja) * 2003-02-05 2004-08-26 Matsushita Electric Ind Co Ltd 抵抗変化素子および製造方法
JP2007180474A (ja) * 2005-12-02 2007-07-12 Sharp Corp 可変抵抗素子及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
JP4509467B2 (ja) * 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
JP4792714B2 (ja) * 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
KR100668824B1 (ko) * 2004-06-30 2007-01-16 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
KR100639206B1 (ko) * 2004-06-30 2006-10-30 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
JP4560818B2 (ja) * 2005-07-22 2010-10-13 エルピーダメモリ株式会社 半導体装置及びその製造方法
US7504653B2 (en) * 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241535A (ja) * 2003-02-05 2004-08-26 Matsushita Electric Ind Co Ltd 抵抗変化素子および製造方法
JP2007180474A (ja) * 2005-12-02 2007-07-12 Sharp Corp 可変抵抗素子及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009084514A1 (ja) * 2007-12-27 2009-07-09 Nec Corporation 記憶素子、半導体記憶装置、および情報読み出し方法
JP2013530525A (ja) * 2010-05-25 2013-07-25 マイクロン テクノロジー， インク． 抵抗変化型メモリセル構造および方法
US9287502B2 (en) 2010-05-25 2016-03-15 Micron Technology, Inc. Resistance variable memory cell structures and methods
TWI503964B (zh) * 2013-03-13 2015-10-11 Winbond Electronics Corp 電阻式非揮發性記憶體裝置

Also Published As

Publication number Publication date
JPWO2008117679A1 (ja) 2010-07-15
US20100038619A1 (en) 2010-02-18
JP5387403B2 (ja) 2014-01-15

Similar Documents

Publication Publication Date Title
WO2008117679A1 (ja) 抵抗変化素子およびその製造方法、並びに電子デバイス
WO2008146243A3 (en) An electronic device comprising a convertible structure, and a method of manufacturing an electronic device
WO2007124050A3 (en) Probe structures with electronic components
WO2008051596A3 (en) Solid state light sheet and encapsulated bare die semiconductor circuits
WO2007149362A3 (en) Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
WO2008112101A3 (en) Packaging methods for imager devices
WO2005122236A3 (en) Semiconductor device with reduced contact resistance
WO2008117513A1 (ja) 導電性バンプとその製造方法および電子部品実装構造体
WO2008099863A1 (ja) 半導体，半導体装置及び相補型トランジスタ回路装置
WO2008093414A1 (ja) 半導体装置及びその製造方法
WO2012072212A3 (de) Elektronisches bauteil, verfahren zu dessen herstellung und leiterplatte mit elektronischem bauteil
WO2010038179A3 (en) An oled device and an electronic circuit
EP2469591A3 (en) Method for fabricating a semiconductor device package
WO2009051376A3 (en) Light emitting device and method for fabricating the same
HK1086434A1 (en) Method and device for electrolytically increasing the thickness of an electrically conductive pattern on a dielectric substrate, as well as a dielectric substrate
WO2008149605A1 (ja) 抵抗変化素子およびこれを備えた半導体装置
WO2009057262A1 (ja) 不揮発性半導体記憶装置およびその製造方法
WO2010065301A3 (en) Method of enabling selective area plating on a substrate
WO2009044863A1 (ja) モジュール、配線板、及びモジュールの製造方法
WO2008059322A3 (en) Printed circuit board with embedded circuit component
WO2008011428A3 (en) Shape adaptable resistive touchpad
TW200802743A (en) High frequency device module and method for manufacturing the same
EP2003707A4 (en) PIEZOELECTRIC ACTUATOR
WO2007096463A3 (en) Element
WO2008152934A1 (ja) 金属一体導電ゴム部品

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722135

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009506285

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12532666

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722135

Country of ref document: EP

Kind code of ref document: A1