WO2008117371A1 - Resistance storage element and non-volatile semiconductor storage device - Google Patents

Resistance storage element and non-volatile semiconductor storage device Download PDF

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Publication number
WO2008117371A1
WO2008117371A1 PCT/JP2007/056022 JP2007056022W WO2008117371A1 WO 2008117371 A1 WO2008117371 A1 WO 2008117371A1 JP 2007056022 W JP2007056022 W JP 2007056022W WO 2008117371 A1 WO2008117371 A1 WO 2008117371A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance storage
conductive film
storage element
resistance
volatile semiconductor
Prior art date
Application number
PCT/JP2007/056022
Other languages
French (fr)
Japanese (ja)
Inventor
Chikako Yoshida
Takashi Iiduka
Hideyuki Noshiro
Shinji Miyagaki
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/056022 priority Critical patent/WO2008117371A1/en
Priority to JP2009506089A priority patent/JP5345052B2/en
Publication of WO2008117371A1 publication Critical patent/WO2008117371A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

Disclosed is a resistance storage element which comprises a bottom electrode (12), a resistance storage layer (14) formed on the bottom electrode, and an upper electrode (16) formed on the resistance storage layer, which can store a highly resistant state and a poorly resistant state and can switch between the highly resistant state and the poorly resistant state according to the voltage applied. In the resistance storage element, the bottom electrode or the upper electrode comprises a first conductive film (74) which is formed on the side facing to the resistance storage layer and comprises a noble metal and a second conductive film (76) which contacts with the first conductive film, has a larger film thickness than the first conductive film, and comprises a non-noble metal.
PCT/JP2007/056022 2007-03-23 2007-03-23 Resistance storage element and non-volatile semiconductor storage device WO2008117371A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/056022 WO2008117371A1 (en) 2007-03-23 2007-03-23 Resistance storage element and non-volatile semiconductor storage device
JP2009506089A JP5345052B2 (en) 2007-03-23 2007-03-23 Resistance memory element and nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056022 WO2008117371A1 (en) 2007-03-23 2007-03-23 Resistance storage element and non-volatile semiconductor storage device

Publications (1)

Publication Number Publication Date
WO2008117371A1 true WO2008117371A1 (en) 2008-10-02

Family

ID=39788116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056022 WO2008117371A1 (en) 2007-03-23 2007-03-23 Resistance storage element and non-volatile semiconductor storage device

Country Status (2)

Country Link
JP (1) JP5345052B2 (en)
WO (1) WO2008117371A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010050094A1 (en) * 2008-10-30 2010-05-06 パナソニック株式会社 Nonvolatile semiconductor storage device and manufacturing method therefor
JP2010527151A (en) * 2007-05-09 2010-08-05 インターモレキュラー， インコーポレイテッド Resistive switching nonvolatile memory element
WO2011074243A1 (en) * 2009-12-18 2011-06-23 パナソニック株式会社 Resistance-varying element and process for production thereof
JP2012089643A (en) * 2010-10-19 2012-05-10 Sony Corp Method for manufacturing memory device, memory element and memory device
CN102484113A (en) * 2009-08-28 2012-05-30 松下电器产业株式会社 SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREof
JP2012151346A (en) * 2011-01-20 2012-08-09 Toyota Central R&D Labs Inc Method for manufacturing mim tunnel diode
US8445885B2 (en) 2008-12-04 2013-05-21 Panasonic Corporation Nonvolatile memory element having a thin platinum containing electrode
US8675393B2 (en) 2010-03-25 2014-03-18 Panasonic Corporation Method for driving non-volatile memory element, and non-volatile memory device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7180475B2 (en) 2019-03-19 2022-11-30 住友ゴム工業株式会社 racket
JP7180474B2 (en) 2019-03-19 2022-11-30 住友ゴム工業株式会社 racket

Citations (3)

* Cited by examiner, † Cited by third party
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JP2001284543A (en) * 2000-03-30 2001-10-12 Seiko Epson Corp Memory device and its manufacturing method
JP2004363604A (en) * 2003-06-03 2004-12-24 Samsung Electronics Co Ltd Nonvolatile memory device including one switching element and one resistor and method for manufacturing the same
JP2007048779A (en) * 2005-08-05 2007-02-22 Sharp Corp Variable resistive element, its manufacturing method and storage device having the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4783070B2 (en) * 2005-06-24 2011-09-28 シャープ株式会社 Semiconductor memory device and manufacturing method thereof
KR101100427B1 (en) * 2005-08-24 2011-12-30 삼성전자주식회사 Nonvolatile semiconductor memory device comprising ion conducting layer and methods of manufacturing and operating the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284543A (en) * 2000-03-30 2001-10-12 Seiko Epson Corp Memory device and its manufacturing method
JP2004363604A (en) * 2003-06-03 2004-12-24 Samsung Electronics Co Ltd Nonvolatile memory device including one switching element and one resistor and method for manufacturing the same
JP2007048779A (en) * 2005-08-05 2007-02-22 Sharp Corp Variable resistive element, its manufacturing method and storage device having the same

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013175768A (en) * 2007-05-09 2013-09-05 Intermolecular Inc Resistive-switching nonvolatile memory elements
JP2010527151A (en) * 2007-05-09 2010-08-05 インターモレキュラー， インコーポレイテッド Resistive switching nonvolatile memory element
JPWO2010050094A1 (en) * 2008-10-30 2012-03-29 パナソニック株式会社 Nonvolatile semiconductor memory device and manufacturing method thereof
WO2010050094A1 (en) * 2008-10-30 2010-05-06 パナソニック株式会社 Nonvolatile semiconductor storage device and manufacturing method therefor
CN102124564A (en) * 2008-10-30 2011-07-13 松下电器产业株式会社 Nonvolatile semiconductor storage device and manufacturing method therefor
US8445883B2 (en) 2008-10-30 2013-05-21 Panasonic Corporation Nonvolatile semiconductor memory device and manufacturing method thereof
US8445885B2 (en) 2008-12-04 2013-05-21 Panasonic Corporation Nonvolatile memory element having a thin platinum containing electrode
JP5400797B2 (en) * 2008-12-04 2014-01-29 パナソニック株式会社 Nonvolatile memory element
JP5417445B2 (en) * 2009-08-28 2014-02-12 パナソニック株式会社 Manufacturing method of semiconductor memory device
CN102484113A (en) * 2009-08-28 2012-05-30 松下电器产业株式会社 SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREof
US9570682B2 (en) 2009-08-28 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Semiconductor memory device and method of manufacturing the same
JP5036909B2 (en) * 2009-12-18 2012-09-26 パナソニック株式会社 Resistance variable element and manufacturing method thereof
CN102696107A (en) * 2009-12-18 2012-09-26 松下电器产业株式会社 Resistance-varying element and process for production thereof
WO2011074243A1 (en) * 2009-12-18 2011-06-23 パナソニック株式会社 Resistance-varying element and process for production thereof
US8530321B2 (en) 2009-12-18 2013-09-10 Panasonic Corporation Variable resistance element and manufacturing method thereof
US8675393B2 (en) 2010-03-25 2014-03-18 Panasonic Corporation Method for driving non-volatile memory element, and non-volatile memory device
JP2012089643A (en) * 2010-10-19 2012-05-10 Sony Corp Method for manufacturing memory device, memory element and memory device
US9118005B2 (en) 2010-10-19 2015-08-25 Sony Corporation Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions
JP2012151346A (en) * 2011-01-20 2012-08-09 Toyota Central R&D Labs Inc Method for manufacturing mim tunnel diode

Also Published As

Publication number Publication date
JPWO2008117371A1 (en) 2010-07-08
JP5345052B2 (en) 2013-11-20

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