WO2008114616A1 - 洗浄用組成物、半導体素子の製造方法 - Google Patents

洗浄用組成物、半導体素子の製造方法 Download PDF

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Publication number
WO2008114616A1
WO2008114616A1 PCT/JP2008/054028 JP2008054028W WO2008114616A1 WO 2008114616 A1 WO2008114616 A1 WO 2008114616A1 JP 2008054028 W JP2008054028 W JP 2008054028W WO 2008114616 A1 WO2008114616 A1 WO 2008114616A1
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning composition
photoresist
semiconductor device
mass
dry etching
Prior art date
Application number
PCT/JP2008/054028
Other languages
English (en)
French (fr)
Inventor
Hiroshi Matsunaga
Masaru Ohto
Hideo Kashiwagi
Hiroshi Yoshida
Original Assignee
Mitsubishi Gas Chemical Company, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Company, Inc. filed Critical Mitsubishi Gas Chemical Company, Inc.
Priority to US12/530,766 priority Critical patent/US7977292B2/en
Priority to CN2008800082292A priority patent/CN101632042B/zh
Priority to JP2009505127A priority patent/JP5146445B2/ja
Priority to EP08721448.2A priority patent/EP2128707B1/en
Priority to KR1020097018845A priority patent/KR101409085B1/ko
Publication of WO2008114616A1 publication Critical patent/WO2008114616A1/ja
Priority to IL200896A priority patent/IL200896A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C11D2111/22—

Abstract

　低誘電率層間絶縁膜と、銅配線または銅合金配線とを有する基板上に、オルガノシロキサン系薄膜、フォトレジスト層とをこの順に積層した後、該フォトレジスト層に選択的露光・現像処理を施してフォトレジストパターンを形成し、次いでこのレジストパターンをマスクとして、オルガノシロキサン系薄膜、前記低誘電率層間絶縁膜にドライエッチング処理を施した後、オルガノシロキサン系薄膜、ドライエッチング処理で生じた残渣、ドライエッチング処理により変質した変質フォトレジスト、変質フォトレジストより下層にある未変質フォトレジスト層を除去する半導体素子の洗浄用組成物であって、過酸化水素１５～２０質量％、アミノポリメチレンホスホン酸類０．０００１～０．００３質量％、水酸化カリウム０．０２～０．５質量％および水を含み、ｐＨが７．５～８．５である洗浄用組成物を提供する。また、当該洗浄用組成物を用いた半導体素子の製造方法を提供する。
PCT/JP2008/054028 2007-03-16 2008-03-06 洗浄用組成物、半導体素子の製造方法 WO2008114616A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/530,766 US7977292B2 (en) 2007-03-16 2008-03-06 Cleaning composition and process for producing semiconductor device
CN2008800082292A CN101632042B (zh) 2007-03-16 2008-03-06 洗涤用组合物、半导体元件的制造方法
JP2009505127A JP5146445B2 (ja) 2007-03-16 2008-03-06 洗浄用組成物、半導体素子の製造方法
EP08721448.2A EP2128707B1 (en) 2007-03-16 2008-03-06 Cleaning composition and process for producing a semiconductor device
KR1020097018845A KR101409085B1 (ko) 2007-03-16 2008-03-06 세정용 조성물, 반도체 소자의 제조 방법
IL200896A IL200896A (en) 2007-03-16 2009-09-13 Cleaning composition and process for producing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007067838 2007-03-16
JP2007-067838 2007-03-16

Publications (1)

Publication Number Publication Date
WO2008114616A1 true WO2008114616A1 (ja) 2008-09-25

Family

ID=39765726

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054028 WO2008114616A1 (ja) 2007-03-16 2008-03-06 洗浄用組成物、半導体素子の製造方法

Country Status (8)

Country Link
US (1) US7977292B2 (ja)
EP (1) EP2128707B1 (ja)
JP (1) JP5146445B2 (ja)
KR (1) KR101409085B1 (ja)
CN (1) CN101632042B (ja)
IL (1) IL200896A (ja)
TW (1) TWI434149B (ja)
WO (1) WO2008114616A1 (ja)

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* Cited by examiner, † Cited by third party
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WO2014087925A1 (ja) 2012-12-03 2014-06-12 三菱瓦斯化学株式会社 半導体素子用洗浄液及びそれを用いた洗浄方法
WO2015156171A1 (ja) * 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
JP2017073545A (ja) * 2015-10-08 2017-04-13 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物および半導体素子の洗浄方法、並びに半導体素子の製造方法
JP2017076783A (ja) * 2015-10-15 2017-04-20 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、半導体素子の洗浄方法および半導体素子の製造方法
WO2017167797A1 (en) 2016-03-29 2017-10-05 Technic France Solution and method for etching titanium based materials
WO2023080235A1 (ja) * 2021-11-08 2023-05-11 三菱瓦斯化学株式会社 プリント配線板の製造方法およびレジストの剥離方法、並びにこれらに用いるレジスト剥離前処理液

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US8921295B2 (en) 2010-07-23 2014-12-30 American Sterilizer Company Biodegradable concentrated neutral detergent composition
CN103087850B (zh) * 2011-11-08 2017-10-03 协鑫集成科技股份有限公司 一种单晶硅片预清洗液及其清洗方法
JP2015512971A (ja) 2012-02-15 2015-04-30 インテグリス，インコーポレイテッド 組成物を使用したｃｍｐ後除去及び使用方法
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
CN103955123A (zh) * 2014-04-11 2014-07-30 武汉高芯科技有限公司 一种离子注入后晶片的湿法去胶液及光刻胶去除方法

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US9422512B2 (en) 2012-12-03 2016-08-23 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid for semiconductor elements and cleaning method using same
WO2014087925A1 (ja) 2012-12-03 2014-06-12 三菱瓦斯化学株式会社 半導体素子用洗浄液及びそれを用いた洗浄方法
JPWO2014087925A1 (ja) * 2012-12-03 2017-01-05 三菱瓦斯化学株式会社 半導体素子用洗浄液及びそれを用いた洗浄方法
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JP5835534B1 (ja) * 2014-04-10 2015-12-24 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
WO2015156171A1 (ja) * 2014-04-10 2015-10-15 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法
JP2017073545A (ja) * 2015-10-08 2017-04-13 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物および半導体素子の洗浄方法、並びに半導体素子の製造方法
US10301581B2 (en) 2015-10-08 2019-05-28 Mitsubishi Gas Chemical Company, Inc. Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
JP2017076783A (ja) * 2015-10-15 2017-04-20 三菱瓦斯化学株式会社 半導体素子の洗浄用液体組成物、半導体素子の洗浄方法および半導体素子の製造方法
KR20170044586A (ko) 2015-10-15 2017-04-25 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 반도체소자의 세정용 액체 조성물, 반도체소자의 세정방법 및 반도체소자의 제조방법
WO2017167797A1 (en) 2016-03-29 2017-10-05 Technic France Solution and method for etching titanium based materials
US10865484B2 (en) 2016-03-29 2020-12-15 Technic France Solution and method for etching titanium based materials
WO2023080235A1 (ja) * 2021-11-08 2023-05-11 三菱瓦斯化学株式会社 プリント配線板の製造方法およびレジストの剥離方法、並びにこれらに用いるレジスト剥離前処理液

Also Published As

Publication number Publication date
KR101409085B1 (ko) 2014-06-17
IL200896A (en) 2013-02-28
CN101632042B (zh) 2012-06-13
TWI434149B (zh) 2014-04-11
US20100029085A1 (en) 2010-02-04
IL200896A0 (en) 2010-05-17
CN101632042A (zh) 2010-01-20
TW200848955A (en) 2008-12-16
EP2128707A1 (en) 2009-12-02
JP5146445B2 (ja) 2013-02-20
EP2128707B1 (en) 2014-04-30
US7977292B2 (en) 2011-07-12
KR20100014961A (ko) 2010-02-11
JPWO2008114616A1 (ja) 2010-07-01
EP2128707A4 (en) 2011-06-22

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