WO2008109204A3 - Multifinger carbon nanotube field-effect transistor - Google Patents

Multifinger carbon nanotube field-effect transistor Download PDF

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Publication number
WO2008109204A3
WO2008109204A3 PCT/US2008/052281 US2008052281W WO2008109204A3 WO 2008109204 A3 WO2008109204 A3 WO 2008109204A3 US 2008052281 W US2008052281 W US 2008052281W WO 2008109204 A3 WO2008109204 A3 WO 2008109204A3
Authority
WO
WIPO (PCT)
Prior art keywords
carbon nanotube
multifinger
effect transistor
gate
nanotube field
Prior art date
Application number
PCT/US2008/052281
Other languages
French (fr)
Other versions
WO2008109204A2 (en
Inventor
Zhen Yu
Peter J Burke
Steffen Mckernan
Dawei Wang
Original Assignee
Zhen Yu
Peter J Burke
Steffen Mckernan
Dawei Wang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/021,042 external-priority patent/US8039870B2/en
Application filed by Zhen Yu, Peter J Burke, Steffen Mckernan, Dawei Wang filed Critical Zhen Yu
Priority to CN200880003634.5A priority Critical patent/CN101669196B/en
Priority to KR1020097017579A priority patent/KR101387202B1/en
Publication of WO2008109204A2 publication Critical patent/WO2008109204A2/en
Publication of WO2008109204A3 publication Critical patent/WO2008109204A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.
PCT/US2008/052281 2007-01-30 2008-01-29 Multifinger carbon nanotube field-effect transistor WO2008109204A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880003634.5A CN101669196B (en) 2007-01-30 2008-01-29 Multifinger carbon nanotube field-effect transistor
KR1020097017579A KR101387202B1 (en) 2007-01-30 2008-01-29 Multifinger carbon nanotube field-effect transistor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US88730607P 2007-01-30 2007-01-30
US60/887,306 2007-01-30
US12/021,042 2008-01-28
US12/021,042 US8039870B2 (en) 2008-01-28 2008-01-28 Multifinger carbon nanotube field-effect transistor

Publications (2)

Publication Number Publication Date
WO2008109204A2 WO2008109204A2 (en) 2008-09-12
WO2008109204A3 true WO2008109204A3 (en) 2009-05-14

Family

ID=39739008

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/052281 WO2008109204A2 (en) 2007-01-30 2008-01-29 Multifinger carbon nanotube field-effect transistor

Country Status (3)

Country Link
KR (1) KR101387202B1 (en)
CN (1) CN101669196B (en)
WO (1) WO2008109204A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8963118B2 (en) 2009-07-31 2015-02-24 Agency For Science, Technology And Research Transistor arrangement and a method of forming a transistor arrangement
KR101770969B1 (en) * 2011-01-21 2017-08-25 삼성디스플레이 주식회사 Substrate of sensing touch and method of manufacturing the substrate
KR102515754B1 (en) * 2020-08-25 2023-03-31 주식회사 그릿에이트 Material sensing electronic circuit system and wearable device including the same
CN112886943B (en) * 2021-01-27 2023-07-18 中国电子科技集团公司第十三研究所 Electric tuning attenuation circuit and electric tuning attenuator applied to terahertz frequency band

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515339B2 (en) * 2000-07-18 2003-02-04 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US6918284B2 (en) * 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7098510B2 (en) * 2003-07-28 2006-08-29 Nec Electronics Corporation Multifinger-type electrostatic discharge protection element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515339B2 (en) * 2000-07-18 2003-02-04 Lg Electronics Inc. Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US6918284B2 (en) * 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US7098510B2 (en) * 2003-07-28 2006-08-29 Nec Electronics Corporation Multifinger-type electrostatic discharge protection element

Also Published As

Publication number Publication date
KR101387202B1 (en) 2014-04-21
CN101669196A (en) 2010-03-10
KR20100014833A (en) 2010-02-11
WO2008109204A2 (en) 2008-09-12
CN101669196B (en) 2013-01-02

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