WO2008107962A1 - 半導体装置の評価方法 - Google Patents

半導体装置の評価方法 Download PDF

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Publication number
WO2008107962A1
WO2008107962A1 PCT/JP2007/054192 JP2007054192W WO2008107962A1 WO 2008107962 A1 WO2008107962 A1 WO 2008107962A1 JP 2007054192 W JP2007054192 W JP 2007054192W WO 2008107962 A1 WO2008107962 A1 WO 2008107962A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
content distribution
evaluating
plating film
copper plating
Prior art date
Application number
PCT/JP2007/054192
Other languages
English (en)
French (fr)
Inventor
Michie Sunayama
Noriyoshi Shimizu
Masaki Haneda
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to PCT/JP2007/054192 priority Critical patent/WO2008107962A1/ja
Priority to JP2009502379A priority patent/JP5333207B2/ja
Publication of WO2008107962A1 publication Critical patent/WO2008107962A1/ja
Priority to US12/548,851 priority patent/US7803642B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

　銅めっき膜を熱処理した際の不純物の濃度分布の変化を解析し、評価する技術を提供することを課題とする。半導体装置の評価方法であって、不純物が所望の濃度分布になるように、めっき電流を第一の電流密度の状態と第二の電流密度の状態とを遷移するようにして成膜した電解銅めっき膜を用意し、熱処理前後の電解銅めっき膜の不純物の濃度分布の変化から不純物の拡散を解析し、評価する。
PCT/JP2007/054192 2007-03-05 2007-03-05 半導体装置の評価方法 WO2008107962A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/JP2007/054192 WO2008107962A1 (ja) 2007-03-05 2007-03-05 半導体装置の評価方法
JP2009502379A JP5333207B2 (ja) 2007-03-05 2007-03-05 拡散係数の算定方法
US12/548,851 US7803642B2 (en) 2007-03-05 2009-08-27 Evaluation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/054192 WO2008107962A1 (ja) 2007-03-05 2007-03-05 半導体装置の評価方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/548,851 Continuation US7803642B2 (en) 2007-03-05 2009-08-27 Evaluation method of semiconductor device

Publications (1)

Publication Number Publication Date
WO2008107962A1 true WO2008107962A1 (ja) 2008-09-12

Family

ID=39737867

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/054192 WO2008107962A1 (ja) 2007-03-05 2007-03-05 半導体装置の評価方法

Country Status (3)

Country Link
US (1) US7803642B2 (ja)
JP (1) JP5333207B2 (ja)
WO (1) WO2008107962A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102590726A (zh) * 2012-02-23 2012-07-18 北京航空航天大学 一种评估功率vmos管寿命以及可靠性的分析方法
WO2014185187A1 (ja) * 2013-05-13 2014-11-20 国立大学法人茨城大学 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053971A1 (ja) * 2002-12-09 2004-06-24 Nec Corporation 配線用銅合金、半導体装置、配線の形成方法及び半導体装置の製造方法
JP2004342977A (ja) * 2003-05-19 2004-12-02 Nec Electronics Corp 半導体装置の製造方法
JP2006019708A (ja) * 2004-06-04 2006-01-19 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2006294922A (ja) * 2005-04-12 2006-10-26 Renesas Technology Corp 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268291B1 (en) * 1995-12-29 2001-07-31 International Business Machines Corporation Method for forming electromigration-resistant structures by doping
US6123825A (en) * 1998-12-02 2000-09-26 International Business Machines Corporation Electromigration-resistant copper microstructure and process of making
KR100385042B1 (ko) * 1998-12-03 2003-06-18 인터내셔널 비지네스 머신즈 코포레이션 내 일렉트로 마이그레이션의 구조물을 도핑으로 형성하는 방법
JP4178295B2 (ja) * 2004-07-14 2008-11-12 富士通マイクロエレクトロニクス株式会社 銅からなる配線を有する半導体装置及びその製造方法
JP2006040908A (ja) * 2004-07-22 2006-02-09 Toshiba Corp 半導体装置の製造方法
JP5484691B2 (ja) * 2008-05-27 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053971A1 (ja) * 2002-12-09 2004-06-24 Nec Corporation 配線用銅合金、半導体装置、配線の形成方法及び半導体装置の製造方法
JP2004342977A (ja) * 2003-05-19 2004-12-02 Nec Electronics Corp 半導体装置の製造方法
JP2006019708A (ja) * 2004-06-04 2006-01-19 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP2006294922A (ja) * 2005-04-12 2006-10-26 Renesas Technology Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102590726A (zh) * 2012-02-23 2012-07-18 北京航空航天大学 一种评估功率vmos管寿命以及可靠性的分析方法
WO2014185187A1 (ja) * 2013-05-13 2014-11-20 国立大学法人茨城大学 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法
JP2014222715A (ja) * 2013-05-13 2014-11-27 国立大学法人茨城大学 半導体集積回路装置及びその製造方法、並びに該半導体集積回路装置に使用する低抵抗率銅配線の探索方法

Also Published As

Publication number Publication date
JP5333207B2 (ja) 2013-11-06
US20090317925A1 (en) 2009-12-24
US7803642B2 (en) 2010-09-28
JPWO2008107962A1 (ja) 2010-06-03

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