WO2008105360A1 - 半導体装置の製造方法及び半導体装置の製造装置 - Google Patents
半導体装置の製造方法及び半導体装置の製造装置 Download PDFInfo
- Publication number
- WO2008105360A1 WO2008105360A1 PCT/JP2008/053163 JP2008053163W WO2008105360A1 WO 2008105360 A1 WO2008105360 A1 WO 2008105360A1 JP 2008053163 W JP2008053163 W JP 2008053163W WO 2008105360 A1 WO2008105360 A1 WO 2008105360A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- device manufacturing
- layer
- insulating layer
- metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49162—Manufacturing circuit on or in base by using wire as conductive path
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800062867A CN101627459B (zh) | 2007-02-27 | 2008-02-25 | 半导体器件制造方法以及半导体器件制造设备 |
KR1020097020079A KR101181389B1 (ko) | 2007-02-27 | 2008-02-25 | 반도체 소자의 제조 방법 및 반도체 소자의 제조 장치 |
US12/528,811 US8043963B2 (en) | 2007-02-27 | 2008-02-25 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
US13/273,612 US8367542B2 (en) | 2007-02-27 | 2011-10-14 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-048065 | 2007-02-27 | ||
JP2007048065A JP2008211090A (ja) | 2007-02-27 | 2007-02-27 | 半導体装置の製造方法及び半導体装置の製造装置 |
JP2007-047944 | 2007-02-27 | ||
JP2007047944A JP2008211079A (ja) | 2007-02-27 | 2007-02-27 | バリア膜の形成方法及びバリア膜、並びに多層配線構造の作製方法及び多層配線構造 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/528,811 A-371-Of-International US8043963B2 (en) | 2007-02-27 | 2008-02-25 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
US13/273,612 Division US8367542B2 (en) | 2007-02-27 | 2011-10-14 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008105360A1 true WO2008105360A1 (ja) | 2008-09-04 |
Family
ID=39721192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053163 WO2008105360A1 (ja) | 2007-02-27 | 2008-02-25 | 半導体装置の製造方法及び半導体装置の製造装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8043963B2 (ja) |
KR (2) | KR101181389B1 (ja) |
CN (2) | CN102290372A (ja) |
TW (1) | TWI392025B (ja) |
WO (1) | WO2008105360A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010626A (ja) * | 2008-06-30 | 2010-01-14 | Ulvac Japan Ltd | 半導体装置の製造装置及び半導体装置の製造方法 |
JP2014012868A (ja) * | 2012-07-04 | 2014-01-23 | Ulvac Japan Ltd | バリア絶縁膜形成方法及びバリア絶縁膜形成装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8216433B2 (en) * | 2006-03-07 | 2012-07-10 | University Of The Ryukyus | Plasma generator and method of generating plasma using the same |
US7776737B2 (en) * | 2008-08-14 | 2010-08-17 | International Business Machines Corporation | Reliability of wide interconnects |
KR101669470B1 (ko) * | 2009-10-14 | 2016-10-26 | 삼성전자주식회사 | 금속 실리사이드층을 포함하는 반도체 소자 |
JP5631728B2 (ja) * | 2010-12-28 | 2014-11-26 | 株式会社アルバック | 絶縁膜形成方法、及び絶縁膜形成装置 |
TWI559381B (zh) * | 2013-02-19 | 2016-11-21 | 應用材料股份有限公司 | 金屬合金薄膜的原子層沉積 |
US8916469B2 (en) * | 2013-03-12 | 2014-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating copper damascene |
US9255326B2 (en) * | 2013-03-12 | 2016-02-09 | Novellus Systems, Inc. | Systems and methods for remote plasma atomic layer deposition |
US9209072B2 (en) * | 2013-10-25 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Global dielectric and barrier layer |
JP6380063B2 (ja) * | 2014-12-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、および、気相成長装置 |
JP2016149486A (ja) * | 2015-02-13 | 2016-08-18 | 東京エレクトロン株式会社 | 絶縁膜の成膜方法及び半導体デバイスの製造方法 |
CN108346620A (zh) * | 2017-01-23 | 2018-07-31 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
JP2020033625A (ja) * | 2018-08-31 | 2020-03-05 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
KR20200143254A (ko) * | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017496A (ja) * | 2001-04-27 | 2003-01-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006057162A (ja) * | 2004-08-23 | 2006-03-02 | Ulvac Japan Ltd | バリア膜の形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US4239536A (en) | 1977-09-09 | 1980-12-16 | Sumitomo Electric Industries, Ltd. | Surface-coated sintered hard body |
US4668538A (en) * | 1984-07-10 | 1987-05-26 | Westinghouse Electric Corp. | Processes for depositing metal compound coatings |
JP2002043315A (ja) | 2000-07-26 | 2002-02-08 | Sony Corp | 半導体装置およびその製造方法 |
TW502391B (en) * | 2001-09-06 | 2002-09-11 | Taiwan Semiconductor Mfg | Fabrication method for doped copper interconnect |
US7374617B2 (en) * | 2002-04-25 | 2008-05-20 | Micron Technology, Inc. | Atomic layer deposition methods and chemical vapor deposition methods |
US6716744B2 (en) | 2002-05-06 | 2004-04-06 | Sharp Laboratories Of America, Inc. | Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper |
DE10258282A1 (de) | 2002-12-13 | 2004-07-08 | Walter Ag | CVD-Beschichtungsverfarhen für ZrBx CyNz-Schichten (x+y+z = 1) sowie beschichtetes Schneidwerkzeug |
JP2004259753A (ja) | 2003-02-24 | 2004-09-16 | Fujitsu Ltd | 半導体装置およびその製造方法 |
KR100543445B1 (ko) * | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
US20050045092A1 (en) * | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. | Method of multi-element compound deposition by atomic layer deposition for IC barrier layer applications |
KR100538633B1 (ko) * | 2003-11-13 | 2005-12-22 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속 배선 형성 방법 |
JP4879509B2 (ja) | 2004-05-21 | 2012-02-22 | 株式会社アルバック | 真空成膜装置 |
US20060113675A1 (en) * | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
US8084368B2 (en) | 2006-11-09 | 2011-12-27 | Ulvac, Inc. | Method of forming barrier film |
-
2008
- 2008-02-25 WO PCT/JP2008/053163 patent/WO2008105360A1/ja active Application Filing
- 2008-02-25 KR KR1020097020079A patent/KR101181389B1/ko active IP Right Grant
- 2008-02-25 US US12/528,811 patent/US8043963B2/en active Active
- 2008-02-25 CN CN2011102702679A patent/CN102290372A/zh active Pending
- 2008-02-25 KR KR1020117019031A patent/KR20110099064A/ko not_active Application Discontinuation
- 2008-02-25 CN CN2008800062867A patent/CN101627459B/zh not_active Expired - Fee Related
- 2008-02-26 TW TW097106539A patent/TWI392025B/zh not_active IP Right Cessation
-
2011
- 2011-10-14 US US13/273,612 patent/US8367542B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017496A (ja) * | 2001-04-27 | 2003-01-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2006057162A (ja) * | 2004-08-23 | 2006-03-02 | Ulvac Japan Ltd | バリア膜の形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010010626A (ja) * | 2008-06-30 | 2010-01-14 | Ulvac Japan Ltd | 半導体装置の製造装置及び半導体装置の製造方法 |
JP2014012868A (ja) * | 2012-07-04 | 2014-01-23 | Ulvac Japan Ltd | バリア絶縁膜形成方法及びバリア絶縁膜形成装置 |
Also Published As
Publication number | Publication date |
---|---|
US8043963B2 (en) | 2011-10-25 |
CN102290372A (zh) | 2011-12-21 |
US8367542B2 (en) | 2013-02-05 |
KR101181389B1 (ko) | 2012-09-19 |
KR20090122263A (ko) | 2009-11-26 |
US20120031650A1 (en) | 2012-02-09 |
CN101627459B (zh) | 2012-02-29 |
TWI392025B (zh) | 2013-04-01 |
US20100068880A1 (en) | 2010-03-18 |
KR20110099064A (ko) | 2011-09-05 |
CN101627459A (zh) | 2010-01-13 |
TW200847284A (en) | 2008-12-01 |
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