WO2008093789A1 - バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法 - Google Patents

バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法 Download PDF

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Publication number
WO2008093789A1
WO2008093789A1 PCT/JP2008/051544 JP2008051544W WO2008093789A1 WO 2008093789 A1 WO2008093789 A1 WO 2008093789A1 JP 2008051544 W JP2008051544 W JP 2008051544W WO 2008093789 A1 WO2008093789 A1 WO 2008093789A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
bipolar semiconductor
zener voltage
conductivity type
manufacturing
Prior art date
Application number
PCT/JP2008/051544
Other languages
English (en)
French (fr)
Inventor
Ryosuke Ishii
Koji Nakayama
Yoshitaka Sugawara
Hidekazu Tsuchida
Original Assignee
The Kansai Electric Power Co., Inc.
Central Research Institute Of Electric Power Industry
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Kansai Electric Power Co., Inc., Central Research Institute Of Electric Power Industry filed Critical The Kansai Electric Power Co., Inc.
Priority to US12/525,198 priority Critical patent/US8178949B2/en
Priority to EP08704291A priority patent/EP2110857A4/en
Publication of WO2008093789A1 publication Critical patent/WO2008093789A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • H01L29/66106—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

［課題］幅広いツェナー電圧（たとえば、１０～５００Ｖ）範囲において、ツェナー電圧の精度の高いバイポーラ型半導体装置が提供すること。 ［解決手段］メサ構造を有し、第１導電型炭化珪素単結晶基板と、第１導電型炭化珪素導電層と、第２導電型高ドーピング層と、第２導電型炭化珪素導電層とがこの順序で積層されてなることを特徴とするバイポーラ型半導体装置。
PCT/JP2008/051544 2007-01-31 2008-01-31 バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法 WO2008093789A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/525,198 US8178949B2 (en) 2007-01-31 2008-01-31 Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage
EP08704291A EP2110857A4 (en) 2007-01-31 2008-01-31 BIPOLAR SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING THE BIPOLAR SEMICONDUCTOR ELEMENT AND METHOD FOR CONTROLLING THE ZENER VOLTAGE

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-021638 2007-01-31
JP2007021638 2007-01-31
JP2007306297A JP5411422B2 (ja) 2007-01-31 2007-11-27 バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法
JP2007-306297 2007-11-27

Publications (1)

Publication Number Publication Date
WO2008093789A1 true WO2008093789A1 (ja) 2008-08-07

Family

ID=39674094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051544 WO2008093789A1 (ja) 2007-01-31 2008-01-31 バイポーラ型半導体装置、その製造方法およびツェナー電圧の制御方法

Country Status (4)

Country Link
US (1) US8178949B2 (ja)
EP (1) EP2110857A4 (ja)
JP (1) JP5411422B2 (ja)
WO (1) WO2008093789A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010107510A1 (en) * 2009-03-20 2010-09-23 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5213350B2 (ja) * 2007-04-26 2013-06-19 関西電力株式会社 炭化珪素ツェナーダイオード
WO2010110246A1 (ja) * 2009-03-25 2010-09-30 ローム株式会社 半導体装置
WO2011105434A1 (ja) * 2010-02-23 2011-09-01 富士電機ホールディングス株式会社 半導体装置
KR101049797B1 (ko) * 2011-02-28 2011-07-19 주식회사 시지트로닉스 고성능 과도전압 방호소자 및 그 제조방법
JP5717674B2 (ja) * 2012-03-02 2015-05-13 株式会社東芝 半導体装置の製造方法
US8866148B2 (en) * 2012-12-20 2014-10-21 Avogy, Inc. Vertical GaN power device with breakdown voltage control
CA2902346A1 (en) 2013-03-14 2014-09-18 Becton Dickinson France S.A.S. Packaging system for oxygen-sensitive drugs
AU2014230834B9 (en) 2013-03-14 2017-08-31 Fresenius Kabi Deutschland Gmbh Injectable morphine formulations
JP6178181B2 (ja) * 2013-09-12 2017-08-09 株式会社東芝 半導体装置及びその製造方法
JP6857488B2 (ja) 2016-11-29 2021-04-14 株式会社日立製作所 半導体装置の製造方法
CN109473354A (zh) * 2018-10-10 2019-03-15 华中科技大学 一种基于碳化硅的漂移阶跃恢复二极管的制备方法及产品

Citations (4)

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JP2002185015A (ja) 2000-12-12 2002-06-28 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
JP2002184782A (ja) * 2000-12-12 2002-06-28 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2004006676A (ja) * 2002-04-18 2004-01-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2005076369A1 (ja) * 2004-02-06 2005-08-18 The Kansai Electric Power Co., Inc. 高耐電圧ワイドギャップ半導体装置及び電力装置

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JP3630594B2 (ja) * 1999-09-14 2005-03-16 株式会社日立製作所 ＳｉＣショットキーダイオード
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Publication number Priority date Publication date Assignee Title
JP2002185015A (ja) 2000-12-12 2002-06-28 Kansai Electric Power Co Inc:The 高耐電圧半導体装置
JP2002184782A (ja) * 2000-12-12 2002-06-28 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2004006676A (ja) * 2002-04-18 2004-01-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2005076369A1 (ja) * 2004-02-06 2005-08-18 The Kansai Electric Power Co., Inc. 高耐電圧ワイドギャップ半導体装置及び電力装置

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JOURNAL OF APPLIED PHYSICS, vol. 92, no. 1, 2002, pages 549 - 554
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See also references of EP2110857A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010107510A1 (en) * 2009-03-20 2010-09-23 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
CN102428559A (zh) * 2009-03-20 2012-04-25 克里公司 双向碳化硅瞬变电压抑制器件
US8445917B2 (en) 2009-03-20 2013-05-21 Cree, Inc. Bidirectional silicon carbide transient voltage suppression devices
US9312256B2 (en) 2009-03-20 2016-04-12 Cree, Inc. Bidirectional silicon carbide transient voltage supression devices

Also Published As

Publication number Publication date
EP2110857A4 (en) 2011-06-15
JP5411422B2 (ja) 2014-02-12
US8178949B2 (en) 2012-05-15
US20100032686A1 (en) 2010-02-11
EP2110857A1 (en) 2009-10-21
JP2008211171A (ja) 2008-09-11

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