WO2008093699A1 - 磁気検出装置及びその製造方法 - Google Patents
磁気検出装置及びその製造方法 Download PDFInfo
- Publication number
- WO2008093699A1 WO2008093699A1 PCT/JP2008/051354 JP2008051354W WO2008093699A1 WO 2008093699 A1 WO2008093699 A1 WO 2008093699A1 JP 2008051354 W JP2008051354 W JP 2008051354W WO 2008093699 A1 WO2008093699 A1 WO 2008093699A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- magnetoresistance effect
- interlayer coupling
- fixed resistive
- resistive element
- magnetic sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
【課題】特に、正負逆符号の層間結合磁界Hinを有する第1磁気抵抗効果素子と第2磁気抵抗効果素子のTCR差を小さくできるとともに、各磁気抵抗効果素子に直列接続される固定抵抗素子を同じ製造プロセスで形成できる磁気検出装置及びその製造方法を提供することを目的としている。 【解決手段】 第1磁気抵抗効果素子23と第2磁気抵抗効果素子27は非磁性導電層61、64の膜厚を除いて同じ膜構成で形成されている。前記第1磁気検出素子23と第2磁気抵抗効果素子27とで非磁性導電層61、64は異なる膜厚で形成され、前記第1磁気抵抗効果素子23は正値の第1層間結合磁界Hin1を有し第2磁気抵抗効果素子27は負値の第2層間結合磁界Hin2を有する。また第1固定抵抗素子24と第2固定抵抗素子28とは同じ膜構成で形成される。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08704136A EP2112522A4 (en) | 2007-02-02 | 2008-01-30 | MAGNETIC SENSOR AND METHOD FOR ITS MANUFACTURE |
JP2008556126A JP5015966B2 (ja) | 2007-02-02 | 2008-01-30 | 磁気検出装置及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-023853 | 2007-02-02 | ||
JP2007023853 | 2007-02-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008093699A1 true WO2008093699A1 (ja) | 2008-08-07 |
Family
ID=39674008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051354 WO2008093699A1 (ja) | 2007-02-02 | 2008-01-30 | 磁気検出装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8198886B2 (ja) |
EP (1) | EP2112522A4 (ja) |
JP (1) | JP5015966B2 (ja) |
WO (1) | WO2008093699A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012044460A (ja) * | 2010-08-19 | 2012-03-01 | Canon Inc | 電子機器 |
JP2017512353A (ja) * | 2013-12-31 | 2017-05-18 | 江▲蘇▼多▲維▼科技有限公司Multidimension Technology Co., Ltd. | 薄型磁気抵抗イメージセンサアレイ |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49109566U (ja) * | 1973-01-11 | 1974-09-19 | ||
JPH11307840A (ja) * | 1998-04-24 | 1999-11-05 | Hitachi Ltd | 磁場測定装置 |
JP2004029007A (ja) * | 2002-05-14 | 2004-01-29 | Hewlett-Packard Development Co Lp | 磁界検出センサ |
JP2006208255A (ja) | 2005-01-31 | 2006-08-10 | Alps Electric Co Ltd | 角度検出センサ |
JP2006253562A (ja) | 2005-03-14 | 2006-09-21 | Mitsubishi Electric Corp | 磁気抵抗効果素子、これを用いた磁界検出器、および磁気抵抗効果素子の製造方法 |
JP2006266777A (ja) | 2005-03-23 | 2006-10-05 | Yamaha Corp | 巨大磁気抵抗効果素子を備える磁気センサ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US7005958B2 (en) * | 2002-06-14 | 2006-02-28 | Honeywell International Inc. | Dual axis magnetic sensor |
US7777607B2 (en) * | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
-
2008
- 2008-01-30 WO PCT/JP2008/051354 patent/WO2008093699A1/ja active Application Filing
- 2008-01-30 EP EP08704136A patent/EP2112522A4/en not_active Ceased
- 2008-01-30 JP JP2008556126A patent/JP5015966B2/ja active Active
- 2008-10-23 US US12/256,798 patent/US8198886B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49109566U (ja) * | 1973-01-11 | 1974-09-19 | ||
JPH11307840A (ja) * | 1998-04-24 | 1999-11-05 | Hitachi Ltd | 磁場測定装置 |
JP2004029007A (ja) * | 2002-05-14 | 2004-01-29 | Hewlett-Packard Development Co Lp | 磁界検出センサ |
JP2006208255A (ja) | 2005-01-31 | 2006-08-10 | Alps Electric Co Ltd | 角度検出センサ |
JP2006253562A (ja) | 2005-03-14 | 2006-09-21 | Mitsubishi Electric Corp | 磁気抵抗効果素子、これを用いた磁界検出器、および磁気抵抗効果素子の製造方法 |
JP2006266777A (ja) | 2005-03-23 | 2006-10-05 | Yamaha Corp | 巨大磁気抵抗効果素子を備える磁気センサ |
Non-Patent Citations (1)
Title |
---|
See also references of EP2112522A4 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012044460A (ja) * | 2010-08-19 | 2012-03-01 | Canon Inc | 電子機器 |
JP2017512353A (ja) * | 2013-12-31 | 2017-05-18 | 江▲蘇▼多▲維▼科技有限公司Multidimension Technology Co., Ltd. | 薄型磁気抵抗イメージセンサアレイ |
US10371761B2 (en) | 2013-12-31 | 2019-08-06 | MultiDimension Technology Co., Ltd. | Low profile magnetoresistive imaging sensor array |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008093699A1 (ja) | 2010-05-20 |
EP2112522A4 (en) | 2011-03-16 |
EP2112522A1 (en) | 2009-10-28 |
JP5015966B2 (ja) | 2012-09-05 |
US20090045810A1 (en) | 2009-02-19 |
US8198886B2 (en) | 2012-06-12 |
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