WO2008089657A1 - Solar cell and method for reducing the serial resistance of solar cells - Google Patents
Solar cell and method for reducing the serial resistance of solar cells Download PDFInfo
- Publication number
- WO2008089657A1 WO2008089657A1 PCT/CN2008/000127 CN2008000127W WO2008089657A1 WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1 CN 2008000127 W CN2008000127 W CN 2008000127W WO 2008089657 A1 WO2008089657 A1 WO 2008089657A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- electrode conductor
- concentrating solar
- solderable
- light incident
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 39
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 2
- 238000010248 power generation Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- -1 gallium hydride Chemical class 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention belongs to the field of solar photovoltaic power generation, and particularly relates to a concentrating solar battery.
- the invention also relates to a method of reducing the resistance of a series of concentrating solar cells.
- the invention also relates to a concentrating solar cell module. Background technique
- the main factors affecting the power output of concentrating solar cells are series resistance, that is, the body resistance of the semiconductor, the surface sheet resistance, and the resistance of the electrode conductor and the contact resistance between the electrode and the silicon surface.
- the bulk resistance of a semiconductor is determined by the material selection of the semiconductor and cannot be improved by the improvement of the processing technology.
- the surface sheet resistance is not as low as possible, and the lower the surface sheet resistance, the electron-hole recombination speed will also be exponential ratio.
- Electrode conductor resistance and "contact resistance between the electrode and the silicon surface” are improved, for example: 1. Use a better electrode conductive material; 2. Widen the electrode conductor Width; 3, using grooved buried gate technology; can effectively reduce the resistance of the electrode conductor resistance, thereby reducing the series resistance; however, 1, the use of better conductive materials, will make the manufacturing cost rise rapidly, and The reduced resistance is limited; 2. For the current common solar cells, the basic requirement is that the electrode conductor elements should be as narrow as possible in order to maximize the light-receiving area of the light incident surface, and the ratio of the light incident surface masked by the electrode conductor elements.
- An object of the present invention is to provide a concentrating solar cell which can increase the cross-sectional area of an electrode conductor and reduce the length of the electrode conductor by providing two solderable electrode conductor members having a wide width and a very short length, thereby effectively reducing the length of the electrode conductor.
- the series resistance of the concentrating solar cell is to provide a concentrating solar cell which can increase the cross-sectional area of an electrode conductor and reduce the length of the electrode conductor by providing two solderable electrode conductor members having a wide width and a very short length, thereby effectively reducing the length of the electrode conductor.
- Another object of the present invention is to provide a concentrating solar cell module in which a plurality of concentrating solar cells are connected in series to each other, and have a maximum light incident surface, which improves utilization of solar energy resources and power generation efficiency.
- a concentrating solar cell includes a doped semiconductor material body having a p/n junction, wherein the concentrating solar energy battery comprises a first main opposite surface forming a light incident surface defined in a top region of the diffusion region of the semiconductor material; and a second main opposite surface forming a back surface of the light incident surface;
- first solderable electrode conductor member disposed on a longer side of the first major opposing surface, the second major opposing surface
- the second solderable electrode conductor member is disposed in parallel with the opposite sides.
- the concentrating solar cell of the present invention wherein the widths of the first solderable electrode conductor component and the second solderable electrode conductor component are equal to the longer sides of the first main opposite surface and the second main opposite surface, respectively,
- the length of the light-incident surface of the concentrating solar cell is from 1.0 mm to 4.0 mm, and the length of the shorter side of the first main opposite surface and the second main opposite surface is from 1.5 mm to 5.5 mm. Mm.
- the first solderable electrode conductor member and the second solderable electrode conductor member have a length of 1.0 mm, and the light incident surface of the concentrating solar cell has a width of 2.0 mm.
- the concentrating solar cell of the present invention wherein the material of the doped semiconductor material body may be selected from the group consisting of silicon, gallium arsenide, indium phosphide, copper indium selenide, antimony, and zinc oxide.
- the material of the solderable electrode conductor member may be selected from one or more mixed materials of metal materials such as aluminum, silver, titanium and nickel.
- the material of the first solderable electrode conductor member is silver
- the material of the second solderable electrode conductor member is a mixture of silver and aluminum.
- the concentrating solar cell of the present invention wherein the doped semiconductor material body is a doped semiconductor wafer.
- a concentrating solar cell module which is composed of a concentrating solar cell of the present invention in series, through a first solderable electrode conductor element of a concentrating solar cell and another adjacent concentrating solar energy
- the second solderable electrode conductor elements of the battery are in direct contact with each other in series.
- a method of reducing series resistance of a concentrating solar cell having a body of doped semiconductor material includes the steps of:
- solderable electrode conductor member on the back surface of the light incident surface of the doped semiconductor material body, the position of which is staggered from the first main opposite surface electrode conductor member, and the staggered positions of all the solderable electrode conductor members are identical;
- a more preferable solution is to first apply an oxidizing agent on the surface of the pure crystalline silicon and perform a step of engraving to form an oxide layer on the surface of the groove to be carved. After cleaning the surface, perform steps 1) to 6) on the silicon.
- FIG. 1 is a front view of light incident of a concentrating solar cell of the present invention
- FIG. 2 is a rear view of a concentrating solar cell
- Figure 3 is a perspective view of a concentrating solar cell of the present invention.
- Figure 4 is a partial perspective view of the concentrating solar cell of Figure 3;
- Figure 5 is a side view showing the state in which two concentrating solar cells are coupled together before dicing
- Figure 6 is a side view showing the state in which two concentrating solar cells are connected in series after dicing
- Figure 7 is a plan view of a concentrating solar cell device formed by connecting ten concentrating solar cells in series;
- Figure 8 is a cross-sectional view of a concentrating solar cell according to another embodiment of the present invention before dicing;
- Figure 9 is a cross-sectional view of a cell after dicing of the concentrating solar cell of Figure 8.
- FIG. 1 shows a group of batteries constituting the concentrating solar cells 11, 12, 13, 14.
- the body of the solar cell is a doped semiconductor material body having a p/n junction, and includes a first main opposite surface 111, 121, 131. 141..., forming a light incident surface established in a top region of the diffusion region of the semiconductor material, and a second main opposite surface 112, 122, 132, 142... located on the back surface of the light incident surface (see FIG. 2), and a plurality of sides, and referring to FIG. 3, is an enlarged perspective view of a concentrating solar cell 11, and FIG.
- the fourth solderable electrode conductor elements 113, 123, 133, 143 are disposed on one side of the long side, and the second solderable electrode conductor elements 114, 124, 134, 1447-8 are disposed in parallel on opposite sides of the second main opposite surface.
- the first solderable electrode conductor member 113 of one concentrating solar cell and the second solderable electrode conductor member 124 of another adjacent concentrating solar cell Tightly welded together since the width W1 of the solderable electrode conductive member is equal to the length of the longer side of the first main opposite surface, and the length L1 is very narrow, 0.5 mm to 1.5 mm, so that the solderable electrode conductor resistance can be Neglected, in addition, the width of the light incident surface of the concentrating solar cell W2 is 1.0mm ⁇ 4.0mm, the first major surface and the opposite second shorter side length L2 of the main opposing faces 1.5mm ⁇ 5.5mm.
- FIG. 7 is a light incident surface of the concentrating solar cell only from the surface. Exposure to sunlight, without any electrode conductor components covering, solar energy resources are 100% utilized, improving the power generation efficiency of concentrating solar cells.
- the concentrating solar cell is made of doped single crystal silicon, which is made of an active semiconductor device, and has a 125 nmim x 125 mm square, 220 ⁇ m thick conventional silicon wafer, which is commercially available.
- the light incident surface of the silicon wafer is then doped at a temperature of 800 to 900 ° C by doping with a phosphorus compound such as POCl 3 to form an n-type and formed as
- the basic p/n junction 117 of the active component of the concentrating solar cell has a surface resistance of about 30 ⁇ / ⁇ .
- the solderable silver paste is applied to the light incident surface of the doped semiconductor material body through a mask to form a plurality of strips having a width of 1 mm, a gap of any two solderable electrode conductor elements of 2 mm, and a length of 125 mm.
- the electrode conductor members 113, 123, 133 and there is no conductor connection between the adjacent two solderable electrode conductor members.
- solderable silver-aluminum paste is applied to the back surface of the doped semiconductor material body through a mask to form a plurality of solderable electrode conductor members 114 having a width of 1 mm, a spacing of 2 mm therebetween, and a length of 125 mm. 124, 134, ..., the back surface solderable electrode conductor of the doped semiconductor material body
- the position of the piece is just offset from the solderable electrode conductor element of the light incident surface, and the staggered positions of all the solderable electrode conductor elements are identical.
- a layer of aluminum 115 is evaporated to generate a back electric field.
- the commonly used high-temperature sintering process and the like are applied to the above materials, so that the silver paste is firmly and reliably connected to the silicon surface, and a back electric field is formed on the back surface.
- An anti-reflection film 116 is deposited on the light incident surface of the concentrating solar cell by a conventional process. Using a laser dicing machine, the staggered portion of the solderable electrode conductor member and the back solderable electrode conductor member along the light incident surface is cut away, as shown in Fig. 5, forming a separate concentrating light having a low series resistance of 125 mm in length and 3 mm in width. Solar cells 11, 12, 13, 14...
- the semiconductor material body used in the concentrating solar cell includes not only doped silicon but also any other semiconductor material.
- Examples of other semiconductor materials are gallium arsenide, indium phosphide, copper indium selenide, antimony and zinc oxide.
- the solderable electrode conductor element is a medium for free electron flow, and in the series connection mode of the concentrating solar cell, the upper surface of one concentrating solar cell is soldered to the lower surface of another concentrating solar cell, and the high conductivity of the component must be ensured.
- the metal materials used are mainly aluminum, silver, titanium, nickel, etc., or a combination of these metals.
- FIGS. 8 and 9 Another embodiment of the present invention is shown in FIGS. 8 and 9.
- the concentrating solar cell produced by the process forms a protective layer, that is, the oxide layer 118, on the side having the p/n junction, which effectively prevents leakage due to the bypass resistance.
- solderable electrode conductor element having a width equal to the length of the concentrating solar cell, and the length of the solderable electrode conductor element
- the shorter the length of the conductor the smaller the resistance. Therefore, the FET temperature of the concentrating solar cell of the present invention is much smaller than that of ordinary solar energy.
- the resistance value of the electrode conductor element of the battery, the resistance of the electrode conductor element is almost negligible, and the overall series resistance value of the concentrating solar cell is effectively reduced.
- the solderable electrode conductor member of the light incident surface of the concentrating solar cell is welded to the back surface solderable electrode conductor component of the other concentrating solar cell, it is connected in series, that is, another concentrating solar cell covers the upper portion.
- the electrode conductor element of a concentrating solar cell, on the surface, the sunlight is incident on the light incident surface of the concentrating solar cell, without any object blocking, all absorbed by the concentrating solar cell, making full use of the solar energy resources , improve the power generation efficiency of concentrating solar cells.
Abstract
A solar cell is provided. The cross-section area of electrode conductors (113, 114) can be enlarged and the length of electrode conductors (113, 114) can be reduced by setting two solderable electrode conductors (113, 114) whose width is wider and length is shorter, therefore it can reduce the serial resistance of the solar cell. A solar cell module is also provided, which is formed by multiple solar cells connected in series. Besides, it provides a method, which can reduce the serial resistance of the solar cell module.
Description
一种聚光太阳能电池及降低聚光太阳能电池串联电阻阻值的方法 技术领域 Concentrating solar cell and method for reducing series resistance of concentrating solar cell
本发明属于太阳能光伏发电领域， 具体涉及一种聚光太阳能电池。 The invention belongs to the field of solar photovoltaic power generation, and particularly relates to a concentrating solar battery.
本发明还涉及降低聚光太阳能电池串联电阻阻值的方法。 The invention also relates to a method of reducing the resistance of a series of concentrating solar cells.
本发明还涉及一种聚光太阳能电池组件。 背景技术 The invention also relates to a concentrating solar cell module. Background technique
目前， 由于高纯度单、 多晶硅的生产技术垄断在几个国外高技术企业中， 晶体硅的价格高居不下， 而太阳能光伏发电***需要大量的单、 多晶硅， 直接 导致太阳能发电成本过高， 目前太阳能光伏发电的成本大约 4-5元 wH, 是 火电成本的 10倍左右， 因而太阳能发电项目大面积推广应用受阻。 At present, due to the monopoly of high-purity single and polycrystalline silicon production technology in several foreign high-tech enterprises, the price of crystalline silicon is high, and solar photovoltaic power generation systems require a large amount of single and polycrystalline silicon, which directly leads to excessive solar power generation costs. The cost of photovoltaic power generation is about 4-5 yuan wH, which is about 10 times of the cost of thermal power. Therefore, the large-scale promotion and application of solar power projects is hindered.
同时， 国内外专家们已经研究发现， 晶体硅光伏电池在正常的太阳光强下 使用实际上是大材小用， 因为晶体硅光伏电池可以承受更高的光强，发出的电 流成比例增加而又不至于影响光伏电池寿命，如果通过几十倍甚至几百倍的聚 光来提高光伏电池区域的光强，输出相同功率电流的光伏电池面积就能够大幅 度缩小， 这样一来， 太阳能电池板晶体硅的使用量就能大幅度减少， 太阳能光 伏发电的成本就可以大幅度下降，接近风能发电或者水电的成本， 达到用户能 够接收的水平。 At the same time, experts at home and abroad have found that the use of crystalline silicon photovoltaic cells under normal solar intensity is actually overkill, because crystalline silicon photovoltaic cells can withstand higher light intensities, and the current emitted is proportionally increased without being Affecting the life of photovoltaic cells, if the light intensity of the photovoltaic cell area is increased by concentrating several tens of times or even hundreds of times, the area of the photovoltaic cell outputting the same power current can be greatly reduced, thus, the solar cell crystalline silicon The amount of use can be greatly reduced, and the cost of solar photovoltaic power generation can be greatly reduced, which is close to the cost of wind power generation or hydropower, and reaches the level that users can receive.
但是， 人们通过实验发现， 普通的太阳能电池在充分散热的情况下， 用 6 倍聚光太阳光光强， 可以得到 4.8倍的功率输出， 但是如果继续加大光强， 发 现其实际功率输出并没有继续成线性按比例增长。 However, people have found through experiments that ordinary solar cells can get 4.8 times the power output with 6 times concentrated solar light in the case of sufficient heat dissipation, but if the light intensity continues to increase, the actual power output is found. Did not continue to grow linearly proportionally.
因此，研究具有高倍率聚光而功率输出能够同步增长的聚光太阳能电池成为光 伏科学家的当前艰巨任务， 科学家们想了不少的办法， 比如刻槽埋栅技术、光 刻细栅线、采用更好的半导体材料碎化镓等等。但是这些技术由于各种原因基 本没有形成大规模生产， 也就是说并没有比较好的经济价值。 Therefore, it is a daunting task for photovoltaic scientists to study concentrating solar cells with high-magnification concentrating and simultaneous power output. Scientists have thought of many methods, such as grooved buried gate technology, lithography fine grid lines, and Better semiconductor materials such as gallium hydride. However, these technologies have not formed large-scale production for various reasons, which means that there is no good economic value.
人们通过大量实验分析，研究得出结论： 影响聚光太阳能电池的功率输出 主要因素是串联电阻， 即半导体的体电阻、表面方块电阻、 以及电极导体电阻 和电极与硅表面间的接触电阻等综合因素所组成； 串联电阻越高， 随着光强的 升高， 聚光电池的转换效率将下降越快。
半导体的体电阻决定于半导体的材料选取，无法通过加工工艺的改善而改 善； 表面方块电阻也不是越低越好， 表面方块电阻越低， 其电子 -空穴的复合 速度也将呈指数倍率比例上升， 不利于大量产生需要的光生电子-空穴对， 因 而该值也是有一定取值范围的， 比如： 20Ω/。~ 100Ω/口， 常规的聚光太阳能电 池产品可以故低一些，但不能够做得过低， 而且这两个电阻相对于整个串联电 阻的组成， 占的比例比较小。 Through a large number of experimental analyses, the research concluded that the main factors affecting the power output of concentrating solar cells are series resistance, that is, the body resistance of the semiconductor, the surface sheet resistance, and the resistance of the electrode conductor and the contact resistance between the electrode and the silicon surface. The composition of the factors; the higher the series resistance, the higher the conversion efficiency of the concentrating battery will be with the increase of the light intensity. The bulk resistance of a semiconductor is determined by the material selection of the semiconductor and cannot be improved by the improvement of the processing technology. The surface sheet resistance is not as low as possible, and the lower the surface sheet resistance, the electron-hole recombination speed will also be exponential ratio. Rising, is not conducive to the large amount of photogenerated electron-hole pairs required, so the value also has a certain range of values, such as: 20 Ω /. ~ 100 Ω / port, conventional concentrating solar cell products can be lower, but can not be made too low, and the ratio of these two resistors relative to the entire series resistance is relatively small.
如果需要有效地降低串联电阻的阻值， 只有对"电极导体电阻 "和"电极与 硅表面间的接触电阻 "进行改善， 比如： ①、 使用更好的电极导电材料； ②、 加宽电极导体的宽度； ③、 采用刻槽埋栅技术； 都能够有效减少电极导体电阻 的阻值， 从而达到減少串联电阻的目的； 然而， 1、 使用更好的导电材料， 将 使制造成本迅速上升， 而且降低的电阻阻值有限； 2、 对于目前常见的太阳能 电池，基本的要求是电极导体元件应当尽可能窄， 以便使光入射面部分受光面 积最大化， 被电极导体元件掩蔽的光入射面的比率越小， 则电池的性能越好， 一般电极导体元件的面积不超过太阳能电池总面积的 10%; 3、 使用刻槽埋栅 技术，即通过减少电极导体宽度，加大电极导体！^人深，可以減少一些串联电阻， 但同样增加了制造成本， 而且目前的生产技术不足以支持大规模批量生产。 If it is necessary to effectively reduce the resistance of the series resistance, only the "electrode conductor resistance" and "contact resistance between the electrode and the silicon surface" are improved, for example: 1. Use a better electrode conductive material; 2. Widen the electrode conductor Width; 3, using grooved buried gate technology; can effectively reduce the resistance of the electrode conductor resistance, thereby reducing the series resistance; however, 1, the use of better conductive materials, will make the manufacturing cost rise rapidly, and The reduced resistance is limited; 2. For the current common solar cells, the basic requirement is that the electrode conductor elements should be as narrow as possible in order to maximize the light-receiving area of the light incident surface, and the ratio of the light incident surface masked by the electrode conductor elements. The smaller the battery performance, the better the area of the electrode conductor element does not exceed 10% of the total area of the solar cell. 3. Use the grooved buried gate technology, that is, reduce the electrode conductor width and increase the electrode conductor! ^People deep can reduce some series resistance, but it also increases manufacturing costs, and current production technology is not enough to support large-scale mass production.
现在已经发现，使用简单的加宽电极导体元件宽度等技术，可以得到串联 电阻比较小的聚光太阳能电池，但是电极元件加宽了， 同时由电极遮盖的电池 面积也增大了， 并没有获得好的效果。 发明内容 It has now been found that a concentrating solar cell having a relatively small series resistance can be obtained by using a technique such as simply widening the width of the electrode conductor element, but the electrode element is widened, and the area of the battery covered by the electrode is also increased, and is not obtained. Good results. Summary of the invention
本发明的一个目的在于提供一种聚光太阳能电池，其通过设置宽度很宽而 长度极短的两个可焊电极导体元件，加大电极导体的横截面积， 减少电极导体 的长度， 有效降低了聚光太阳能电池的串联电阻。 An object of the present invention is to provide a concentrating solar cell which can increase the cross-sectional area of an electrode conductor and reduce the length of the electrode conductor by providing two solderable electrode conductor members having a wide width and a very short length, thereby effectively reducing the length of the electrode conductor. The series resistance of the concentrating solar cell.
本发明的另一个目的在于提供一种聚光太阳能电池组件，有多个聚光太阳 能电池相互串联组成， 具有最大限度的光入射面，提高了太阳光资源的利用率 和发电效率。 Another object of the present invention is to provide a concentrating solar cell module in which a plurality of concentrating solar cells are connected in series to each other, and have a maximum light incident surface, which improves utilization of solar energy resources and power generation efficiency.
本发明的另一个目的在于提供降低聚光太阳能电池串联电阻阻值的方法。 根据本发明的一方面， 一种聚光太阳能电池， 包括一具有 ρ/η结的掺杂半 导体材料本体， 其特征在于所述聚光太阳能能电池包括
第一主要相对面， 形成建立在半导体材料扩散区顶区的光入射面； 第二主要相对面， 形成光入射面的背面； 以及 Another object of the present invention is to provide a method of reducing the series resistance of a concentrating solar cell. According to an aspect of the invention, a concentrating solar cell includes a doped semiconductor material body having a p/n junction, wherein the concentrating solar energy battery comprises a first main opposite surface forming a light incident surface defined in a top region of the diffusion region of the semiconductor material; and a second main opposite surface forming a back surface of the light incident surface;
多个侧面， 位于所述第一主要相对面与第二主要相对面之间； 所述笫一主要相对面的较长边一侧设置第一可焊电极导体元件，所述第 二主要相对面的相对侧平行设置第二可焊电极导体元件。 a plurality of sides disposed between the first major opposing surface and the second major opposing surface; a first solderable electrode conductor member disposed on a longer side of the first major opposing surface, the second major opposing surface The second solderable electrode conductor member is disposed in parallel with the opposite sides.
本发明所述的聚光太阳能电池，其中第一可焊电极导体元件和第二可焊电 极导体元件的宽度分别与所述第一主要相对面和第二主要相对面的较长边相 等， 其长度为 0.5mm ~ 1.5mm , 所述聚光太阳能电池光入射面的宽度为 1.0mm ~ 4.0mm, 所述第一主要相对面与第二主要相对面的较短边的长度为 1.5mm ~ 5.5mm。 优选的是第一可焊电极导体元件和第二可焊电极导体元件的 长度为 1.0mm, 聚光太阳能电池光入射面的宽度 2.0mm。 The concentrating solar cell of the present invention, wherein the widths of the first solderable electrode conductor component and the second solderable electrode conductor component are equal to the longer sides of the first main opposite surface and the second main opposite surface, respectively, The length of the light-incident surface of the concentrating solar cell is from 1.0 mm to 4.0 mm, and the length of the shorter side of the first main opposite surface and the second main opposite surface is from 1.5 mm to 5.5 mm. Mm. Preferably, the first solderable electrode conductor member and the second solderable electrode conductor member have a length of 1.0 mm, and the light incident surface of the concentrating solar cell has a width of 2.0 mm.
本发明所述的聚光太阳能电池，其中所述掺杂半导体材料本体的材料可以 选自硅、 砷化镓、 磷化铟、 硒化铜铟、 锗以及氧化锌。 The concentrating solar cell of the present invention, wherein the material of the doped semiconductor material body may be selected from the group consisting of silicon, gallium arsenide, indium phosphide, copper indium selenide, antimony, and zinc oxide.
本发明所述的聚光太阳能电池，其中所述可焊电极导体元件的材料可以选 自铝、银、 钛和镍等金属材料的一种或多种混合材料。优选的是第一可焊电极 导体元件的材料为银， 第二可焊电极导体元件的材料为银与铝的混合物。 In the concentrating solar cell of the present invention, the material of the solderable electrode conductor member may be selected from one or more mixed materials of metal materials such as aluminum, silver, titanium and nickel. Preferably, the material of the first solderable electrode conductor member is silver, and the material of the second solderable electrode conductor member is a mixture of silver and aluminum.
本发明所述的聚光太阳能电池，其中所述掺杂半导体材料本体为掺杂半导 体晶片。 The concentrating solar cell of the present invention, wherein the doped semiconductor material body is a doped semiconductor wafer.
根据本发明的又一方面，提供一种聚光太阳能电池组件，其由本发明的聚 光太阳能电池串联组成，通过一聚光太阳能电池的第一可焊电极导体元件与相 邻另一聚光太阳能电池的第二可焊电极导体元件直接接触而相互串联。 According to still another aspect of the present invention, a concentrating solar cell module is provided which is composed of a concentrating solar cell of the present invention in series, through a first solderable electrode conductor element of a concentrating solar cell and another adjacent concentrating solar energy The second solderable electrode conductor elements of the battery are in direct contact with each other in series.
根据本发明的另一方面，一种降低具有掺杂半导体材料本体的聚光太阳能 电池的串联电阻的方法， 包括下述步骤： In accordance with another aspect of the invention, a method of reducing series resistance of a concentrating solar cell having a body of doped semiconductor material includes the steps of:
1 )提供具有 p/n节的掺杂半导体材料本体； 1) providing a doped semiconductor material body having p/n junctions;
2 )在掺杂半导体本体的光入射面制作可焊电极导体元件， 相邻两条可 焊电极导体元件之间无导体连接； 2) forming a solderable electrode conductor element on the light incident surface of the doped semiconductor body, and having no conductor connection between the adjacent two solderable electrode conductor elements;
3 )在掺杂半导体材料本体的光入射面的背面制作可焊电极导体元件， 其位置与位于第一主要相对面电极导体元件错开，并且所有可焊电极导体元件 的错开位置均一致； 3) forming a solderable electrode conductor member on the back surface of the light incident surface of the doped semiconductor material body, the position of which is staggered from the first main opposite surface electrode conductor member, and the staggered positions of all the solderable electrode conductor members are identical;
4 )在掺杂半导体材料本体的光入射面的背面其他位置制作铝层作为背
面场; 4) making an aluminum layer as a back at other positions on the back side of the light incident surface of the doped semiconductor material body Face field
5 )在光入射面制作减反射薄膜； 5) making an anti-reflection film on the light incident surface;
6 ) 电极导体元件金属化烧结； 6) metallization of the electrode conductor element;
7 )应用激光划片机沿所述掺杂半导体材料本体的光入射面可焊电极导 体元件及背面可焊电极导体元件错开位置进行划片，形成独立的具有低串联电 阻的聚光太阳能电池。 7) Applying a laser dicing machine to scribe along the light incident surface solderable electrode conductor component and the back solderable electrode conductor component of the doped semiconductor material body to form an astigmatic solar cell having a low series resistance.
为了避免产生因旁路电阻过小而导致的漏电过大，更优选的方案是先在纯 净的晶体硅表面涂覆氧化剂并进行刻槽的步骤，让被刻的槽表面形成一层氧化 层， 清洗完表面后， 再对硅进行步骤 1 ) ~ 6 )。 In order to avoid excessive leakage caused by too small bypass resistance, a more preferable solution is to first apply an oxidizing agent on the surface of the pure crystalline silicon and perform a step of engraving to form an oxide layer on the surface of the groove to be carved. After cleaning the surface, perform steps 1) to 6) on the silicon.
上述步骤 2 ) ~ 7 ) 的制作顺序可以根据需要进行调整， 而不影响聚光太 阳能电池的效果。 附图的简要说明 The order of the above steps 2) ~ 7) can be adjusted as needed without affecting the effect of the concentrating solar battery. BRIEF DESCRIPTION OF THE DRAWINGS
图 1为本发明聚光太阳能电池的光入射正面图； 1 is a front view of light incident of a concentrating solar cell of the present invention;
图 2为聚光太阳能电池的背面图； 2 is a rear view of a concentrating solar cell;
图 3为本发明一个聚光太阳能电池的立体图； Figure 3 is a perspective view of a concentrating solar cell of the present invention;
图 4为图 3中聚光太阳能电池的局部立体图； Figure 4 is a partial perspective view of the concentrating solar cell of Figure 3;
图 5为划片前两片聚光太阳能电池联结在一起的侧面状态图； Figure 5 is a side view showing the state in which two concentrating solar cells are coupled together before dicing;
图 6为划片后两片聚光太阳能电池串联在一起的侧面状态图； Figure 6 is a side view showing the state in which two concentrating solar cells are connected in series after dicing;
图 7为 10块聚光太阳能电池串联连接形成的聚光太阳能电池装置的平面 图； Figure 7 is a plan view of a concentrating solar cell device formed by connecting ten concentrating solar cells in series;
图 8为本发明另一种实施方式的聚光太阳能电池在划片前的剖视图； 图 9为图 8中的聚光太阳能电池划片后一个电池的剖视图。 发明的详细描述 Figure 8 is a cross-sectional view of a concentrating solar cell according to another embodiment of the present invention before dicing; Figure 9 is a cross-sectional view of a cell after dicing of the concentrating solar cell of Figure 8. Detailed description of the invention
下面结合附图，通过对本发明较佳实施例的描述，详细说明但不限制本发 明。 The present invention is described in detail below with reference to the accompanying drawings, in which
本发明的聚光太阳能电池如图 1〜图 4所示， 图 1示出了划片前聚光太阳 能电池 11 , 12, 13 , 14.....构成的一组电池， 每个聚光太阳能电池的本体为一 具有 p/n结的掺杂半导体材料本体， 包括一第一主要相对面 111 , 121 , 131 ,
141...... , 形成建立在半导体材料扩散区顶区的光入射面， 和位于光入射面背 面的第二主要相对面 112, 122, 132, 142...... (见图 2 ), 以及多个侧面， 同 时参见图 3， 是一个聚光太阳能电池 11的放大立体图， 图 4则示出了揭去部 分减反射膜层 116的电池 11 , 在第一主要相对面的较长边一侧设置第一可焊 电极导体元件 113, 123 , 133, 143 , 在第二主要相对面的相对侧平行设 置第二可焊电极导体元件 114, 124, 134， 144......， 在由多个聚光太阳能电 池组成的电池组件 1中，一个聚光太阳能电池的笫一可焊电极导体元件 113与 相邻的另一片聚光太阳能电池的第二可焊电极导体元件 124 牢牢地焊接在一 起， 由于可焊电极导电元件的宽度 W1等于第一主要相对面的较长边的长度， 而长度 L1非常窄， 为 0.5mm ~ 1.5mm, 因而其可焊电极导体电阻可以忽略不 计， 此外， 聚光太阳能电池光入射面的宽度 W2为 1.0mm ~ 4.0mm, 所述第一 主要相对面与第二主要相对面的较短边的长度 L2为 1.5mm ~ 5.5mm。串联后， 第一块聚光太阳能电池光入射面的可焊电极导电元件 113 被第二块聚光太阳 能电池所覆盖， 依次类推， 图 7是从表面上看， 只有聚光太阳能电池光入射面 暴露在太阳光下， 没有任何电极导体元件覆盖， 太阳光资源被 100%的利用， 提高了聚光太阳能电池的发电效率。 The concentrating solar cell of the present invention is shown in FIG. 1 to FIG. 4, and FIG. 1 shows a group of batteries constituting the concentrating solar cells 11, 12, 13, 14.. The body of the solar cell is a doped semiconductor material body having a p/n junction, and includes a first main opposite surface 111, 121, 131. 141..., forming a light incident surface established in a top region of the diffusion region of the semiconductor material, and a second main opposite surface 112, 122, 132, 142... located on the back surface of the light incident surface (see FIG. 2), and a plurality of sides, and referring to FIG. 3, is an enlarged perspective view of a concentrating solar cell 11, and FIG. 4 shows a battery 11 with a portion of the anti-reflection film layer 116 removed, in the first main opposite surface. The first solderable electrode conductor elements 113, 123, 133, 143 are disposed on one side of the long side, and the second solderable electrode conductor elements 114, 124, 134, 144..... are disposed in parallel on opposite sides of the second main opposite surface. In the battery assembly 1 composed of a plurality of concentrating solar cells, the first solderable electrode conductor member 113 of one concentrating solar cell and the second solderable electrode conductor member 124 of another adjacent concentrating solar cell Tightly welded together, since the width W1 of the solderable electrode conductive member is equal to the length of the longer side of the first main opposite surface, and the length L1 is very narrow, 0.5 mm to 1.5 mm, so that the solderable electrode conductor resistance can be Neglected, in addition, the width of the light incident surface of the concentrating solar cell W2 is 1.0mm ~ 4.0mm, the first major surface and the opposite second shorter side length L2 of the main opposing faces 1.5mm ~ 5.5mm. After being connected in series, the solderable electrode conductive element 113 of the light incident surface of the first concentrating solar cell is covered by the second concentrating solar cell, and so on. FIG. 7 is a light incident surface of the concentrating solar cell only from the surface. Exposure to sunlight, without any electrode conductor components covering, solar energy resources are 100% utilized, improving the power generation efficiency of concentrating solar cells.
聚光太阳能电池是用掺杂的单晶硅， 用制作有源半导体设备制成的， 取 125nimx 125mm的方形、 厚度为 220μηι的常规区熔单晶硅片， 这种晶片可以 在市场上获得。 The concentrating solar cell is made of doped single crystal silicon, which is made of an active semiconductor device, and has a 125 nmim x 125 mm square, 220 μm thick conventional silicon wafer, which is commercially available.
通过蚀刻、构造以及清洗晶片等常规工艺， 然后将该硅晶片的光入射面在 800 ~ 900°C通过使用磷化合物， 如 POCl3掺杂， 进行重扩散， 将其制成 n型并 形成作为聚光太阳能电池的有源組分的基本 p/n结 117,表面电阻的值为 30Ω/口 左右。 By conventional processes such as etching, structuring, and cleaning the wafer, the light incident surface of the silicon wafer is then doped at a temperature of 800 to 900 ° C by doping with a phosphorus compound such as POCl 3 to form an n-type and formed as The basic p/n junction 117 of the active component of the concentrating solar cell has a surface resistance of about 30 Ω/□.
通过掩膜，将可焊的银浆应用在掺杂半导体材料本体的光入射表面，形成 若干条宽度为 lmm， 任意两条可焊电极导体元件之间的净空为 2mm, 长度为 125mm的可焊电极导体元件 113 , 123 , 133..... , 而且相邻两条可焊电极导体 元件之间没有任何导体连接。 The solderable silver paste is applied to the light incident surface of the doped semiconductor material body through a mask to form a plurality of strips having a width of 1 mm, a gap of any two solderable electrode conductor elements of 2 mm, and a length of 125 mm. The electrode conductor members 113, 123, 133..... and there is no conductor connection between the adjacent two solderable electrode conductor members.
同样， 通过掩膜， 将可焊的银铝浆应用在掺杂半导体材料本体的背面， 形 成若干条宽度为 1mm, 两条之间的间隔为 2mm, 长度为 125mm的可焊电极 导体元件 114, 124, 134, ...... , 掺杂半导体材料本体的背面可焊电极导体元
件的位置刚好与光入射表面的可焊电极导体元件错开，并且所有可焊电极导体 元件的错开位置均一致。 Similarly, a solderable silver-aluminum paste is applied to the back surface of the doped semiconductor material body through a mask to form a plurality of solderable electrode conductor members 114 having a width of 1 mm, a spacing of 2 mm therebetween, and a length of 125 mm. 124, 134, ..., the back surface solderable electrode conductor of the doped semiconductor material body The position of the piece is just offset from the solderable electrode conductor element of the light incident surface, and the staggered positions of all the solderable electrode conductor elements are identical.
在掺杂半导体材料本体的背面没有应用银浆的位置，蒸镀一层铝 115用于 生成背电场。 通常使用的高温烧结工艺方法等措施，应用于以上材料， 使银浆 牢固可靠连接在硅表面， 并在背面形成背电场。 At a position where no silver paste is applied to the back surface of the doped semiconductor material body, a layer of aluminum 115 is evaporated to generate a back electric field. The commonly used high-temperature sintering process and the like are applied to the above materials, so that the silver paste is firmly and reliably connected to the silicon surface, and a back electric field is formed on the back surface.
采用常规的工艺方法在聚光太阳能电池的光入射表面沉积一层减反射薄 膜 116。 应用激光划片机， 沿光入射面可焊电极导体元件和背面可焊电极导体 元件的错开处划开， 见图 5, 形成独立的长度为 125mm， 宽度为 3mm的具有 低串联电阻的聚光太阳能电池 11 , 12, 13 , 14......。 An anti-reflection film 116 is deposited on the light incident surface of the concentrating solar cell by a conventional process. Using a laser dicing machine, the staggered portion of the solderable electrode conductor member and the back solderable electrode conductor member along the light incident surface is cut away, as shown in Fig. 5, forming a separate concentrating light having a low series resistance of 125 mm in length and 3 mm in width. Solar cells 11, 12, 13, 14...
聚光太阳能电池使用的半导体材料本体不但包含掺杂硅，还可以包含其它 任何半导体材料， 其他半导体材料的例子是砷化镓、 磷化铟、硒化铜铟、 锗以 及氧化锌。 The semiconductor material body used in the concentrating solar cell includes not only doped silicon but also any other semiconductor material. Examples of other semiconductor materials are gallium arsenide, indium phosphide, copper indium selenide, antimony and zinc oxide.
可焊电极导体元件是自由电子流动的媒体，而且是聚光太阳能电池串联连 接方式中一块聚光太阳能电池上表面与另一块聚光太阳能电池的下表面焊接 之处，必须保证该元件的高导电性能和高可焊接性能，所用金属材料主要有铝、 银、 钛、 镍等， 或是这些金属的综合应用。 The solderable electrode conductor element is a medium for free electron flow, and in the series connection mode of the concentrating solar cell, the upper surface of one concentrating solar cell is soldered to the lower surface of another concentrating solar cell, and the high conductivity of the component must be ensured. Performance and high weldability, the metal materials used are mainly aluminum, silver, titanium, nickel, etc., or a combination of these metals.
本发明的另一种实施方式如图 8和图 9所示，为了防止在划片后形成的聚 光太阳能电池侧面的漏电现象，在制作时，可以首先在半导体材料本体的光入 射面涂覆氧化剂层， 然后在表面进行激光划片， 形成刻槽 20, 刻槽的表面被 通过划片时的高温与氧化剂层发生反应， 形成的一层氧化层 118所覆盖，再进 行上述的各步骤形成第一可焊电极导体元件 113 ,第二可焊电极导体元件 114, 铝背场 115以及减反射膜 116等，然后从光入射面进行划片形成聚光太阳能电 池（图 9 )，通过这种工艺制作的聚光太阳能电池在其有 p/n结的侧面形成了一 层保护层， 即氧化层 118, 这样有效地防止了因旁路电阻而产生的漏电现象。 工业应用性 Another embodiment of the present invention is shown in FIGS. 8 and 9. In order to prevent leakage of the side of the concentrating solar cell formed after dicing, it may be first coated on the light incident surface of the semiconductor material body during fabrication. The oxidant layer is then laser diced on the surface to form the groove 20. The surface of the groove is reacted with the oxidant layer by the high temperature at the time of dicing, and the formed oxide layer 118 is covered, and then the above steps are formed. a first solderable electrode conductor member 113, a second solderable electrode conductor member 114, an aluminum back field 115, an anti-reflection film 116, and the like, and then diced from the light incident surface to form a concentrating solar cell (Fig. 9). The concentrating solar cell produced by the process forms a protective layer, that is, the oxide layer 118, on the side having the p/n junction, which effectively prevents leakage due to the bypass resistance. Industrial applicability
本发明聚光太阳能电池，半导体材料本体的光入射面的一侧和背面的另 一侧将分别形成一条宽度与聚光太阳能电池长度相等的可焊电极导体元件，而 可焊电极导体元件的长度最大值为仅 1.5mm,根据普通物理学知识知道，可焊 电极导体元件的导电横截面积 =半导体本体材料的宽度 X 电极导体元件的
高度， 我们知道， 导体的横截面积越大， 电阻就越小， 同时，导体的长度越短， 电阻也就越小，因而本发明的聚光太阳能电池其电极导体电阻值远远小于普通 太阳能电池的电极导体元件的电阻值， 电极导体元件的电阻几乎可以忽略不 计， 有效降低了聚光太阳能电池的整体串联电阻阻值。 In the concentrating solar cell of the present invention, one side of the light incident surface of the semiconductor material body and the other side of the back surface respectively form a solderable electrode conductor element having a width equal to the length of the concentrating solar cell, and the length of the solderable electrode conductor element The maximum value is only 1.5 mm, which is known from the general physics knowledge, the conductive cross-sectional area of the solderable electrode conductor element = the width of the semiconductor body material X of the electrode conductor element Height, we know that the larger the cross-sectional area of the conductor, the smaller the resistance. At the same time, the shorter the length of the conductor, the smaller the resistance. Therefore, the FET temperature of the concentrating solar cell of the present invention is much smaller than that of ordinary solar energy. The resistance value of the electrode conductor element of the battery, the resistance of the electrode conductor element is almost negligible, and the overall series resistance value of the concentrating solar cell is effectively reduced.
而且， 由于聚光太阳能电池光入射面的可焊电极导体元件与另一块聚光 太阳能电池的背面可焊电极导体元件焊接在一起， 属于串联连接方式， 即另一 块聚光太阳能电池盖住了上一块聚光太阳能电池的电极导体元件， 从表面上 看， 太阳光照射在聚光太阳能电池上的光入射面， 无任何物体阻挡， 全部被聚 光太阳能电池所吸收， 更加充分利用了太阳光资源，提高了聚光太阳能电池的 发电效率。
Moreover, since the solderable electrode conductor member of the light incident surface of the concentrating solar cell is welded to the back surface solderable electrode conductor component of the other concentrating solar cell, it is connected in series, that is, another concentrating solar cell covers the upper portion. The electrode conductor element of a concentrating solar cell, on the surface, the sunlight is incident on the light incident surface of the concentrating solar cell, without any object blocking, all absorbed by the concentrating solar cell, making full use of the solar energy resources , improve the power generation efficiency of concentrating solar cells.
Claims
1、 一种聚光太阳能电池， 包括一具有 p/n结的掺杂半导体材料本体，其特 征在于所述聚光太阳能电池包括 A concentrating solar cell comprising a body of doped semiconductor material having a p/n junction, characterized in that said concentrating solar cell comprises
第一主要相对面， 形成建立在半导体材料扩散区顶区的光入射面； 笫二主要相对面， 形成光入射面的背面； 以及 a first major opposing surface forming a light incident surface defined in a top region of the diffusion region of the semiconductor material; and a second opposing surface forming a back surface of the light incident surface;
多个侧面， 位于所述第一主要相对面与第二主要相对面之间； a plurality of sides between the first major opposing face and the second major opposing face;
所述第一主要相对面的较长边一侧设置第一可焊电极导体元件， 所述第 二主要相对面的相对侧平行设置第二可焊电极导体元件。 A first solderable electrode conductor member is disposed on a longer side of the first main opposite surface, and a second solderable electrode conductor member is disposed in parallel with an opposite side of the second main opposite surface.
2、 权利要求 1 所述的聚光太阳能电池， 其特征在于所述第一可焊电极导 体元件和第二可焊电极导体元件的宽度分别与所述第一主要相对面和第二主 要相对面的较长边相等， 其长度为 0.5mm ~ 1.5mm, 所述聚光太阳能电池光入 射面的宽度为 1.0mm ~ 4.0mm,所述第一主要相对面与第二主要相对面的较短 边的长度为 1.5mm ~ 5.5mm。 2. The concentrating solar cell of claim 1 wherein a width of said first solderable electrode conductor component and said second solderable electrode conductor component are respectively opposite said first major opposing face and said second major opposing face The longer sides are equal, and the length thereof is 0.5 mm to 1.5 mm, and the light incident surface of the concentrating solar cell has a width of 1.0 mm to 4.0 mm, and the first main opposite surface and the shorter side of the second main opposite surface The length is from 1.5mm to 5.5mm.
3、 权利要求 2所述的聚光太阳能电池， 其特征在于所述第一可焊电极导 体元件和第二可焊电极导体元件的长度为 1.0mm, 所述聚光太阳能电池光入 射面的宽度 2.0mm。 3. The concentrating solar cell of claim 2, wherein the first solderable electrode conductor component and the second solderable electrode conductor component have a length of 1.0 mm, and a width of the light incident surface of the concentrating solar cell 2.0mm.
4、 权利要求 1 所述的聚光太阳能电池， 其特征在于所述掺杂半导体本体 的材料选自硅、 砷化镓、 磷化铟、 硒化铜铟、 锗以及氧化锌。 4. The concentrating solar cell of claim 1 wherein the material of the doped semiconductor body is selected from the group consisting of silicon, gallium arsenide, indium phosphide, copper indium selenide, antimony, and zinc oxide.
5、 权利要求 1 所述的聚光太阳能电池， 其特征在于所述可焊电极导体元 件的材料选自铝、 银、 钛和镍的一种或多种。 A concentrating solar cell according to claim 1, wherein the material of said solderable electrode conductor member is one or more selected from the group consisting of aluminum, silver, titanium and nickel.
6、 权利要求 5 所述的聚光太阳能电池， 其特征在于所述第一可焊电极导 体元件的材料为银， 所述第二可焊电极导体元件的材料为银与铝的混合物。 A concentrating solar cell according to claim 5, wherein said first solderable electrode conductor member is made of silver, and said second solderable electrode conductor member is made of a mixture of silver and aluminum.
7、 权利要求 1 所述的聚光太阳能电池， 其特征在于所述摻杂半导体材料 本体为掺杂半导体晶片。 7. The concentrating solar cell of claim 1 wherein said doped semiconductor material body is a doped semiconductor wafer.
8、 一种聚光太阳能电池组件， 包括多个相互串联的如权利要求 1 所述的 聚光太阳能电池，其中通过一聚光太阳能电池的第一可焊电极导体元件与相邻 另一聚光太阳能电池的第二可焊电极导体元件直接焊接接触而相互串联。 8. A concentrating solar cell module comprising a plurality of concentrating solar cells according to claim 1 in series with each other, wherein a first solderable electrode conductor member passing through a concentrating solar cell and another adjacent concentrating light The second solderable electrode conductor elements of the solar cell are directly soldered into contact with each other in series.
9、 一种降低具有掺杂半导体材料本体的聚光太阳能电池装置的串联电阻 的方法， 包括： 9. A method of reducing series resistance of a concentrating solar cell device having a body of doped semiconductor material, comprising:
a)提供具有 p/n节的掺杂半导体材料本体；
可焊电极导体元件之间无导体连接； a) providing a doped semiconductor material body having p/n junctions; No conductor connection between the solderable electrode conductor elements;
c)在掺杂半导体材料本体的光入射面的背面制作可焊电极导体元件，其 位置与位于第一主要相对面电极导体元件错开，并且所有可焊电极导体元件的 错开位置均一致； c) forming a solderable electrode conductor member on the back side of the light incident surface of the doped semiconductor material body, the position being staggered from the first main opposite surface electrode conductor member, and the staggered positions of all the solderable electrode conductor members are identical;
d)在掺杂半导体材料本体的光入射面的背面其他位置制作铝层作为背 面场； d) fabricating an aluminum layer as a back surface at other locations on the back side of the light incident surface of the doped semiconductor material body;
e)在光入射面制作减反射薄膜； e) making an anti-reflection film on the light incident surface;
f) 电极导体元件金属化烧结； f) metallization of the electrode conductor element;
g)应用激光划片机沿所述掺杂半导体材料本体的光入射面可焊电极导 体元件及背面可焊电极导体元件错开位置进行划片，形成独立的具有低串联电 阻的聚光太阳能电池。 g) applying a laser dicing machine to scribe along the light incident surface solderable electrode conductor component and the back solderable electrode conductor component staggered position of the doped semiconductor material body to form an independent concentrating solar cell having a low series resistance.
10、 权利要求 9所述的方法，其特征在于进一步包括在制作聚光太阳能电 池前，首先在所述半导体材料本体的光入射面表面涂覆氧化剂并进行刻槽的步
10. The method of claim 9 further comprising the step of first applying an oxidizing agent to the surface of the light incident surface of said body of semiconductor material and engraving prior to fabricating the concentrating solar cell.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100077003A CN101226968A (en) | 2007-01-17 | 2007-01-17 | Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method |
| CN200710007700.3 | 2007-01-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008089657A1 true WO2008089657A1 (en) | 2008-07-31 |
Family
ID=39644109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2008/000127 WO2008089657A1 (en) | 2007-01-17 | 2008-01-17 | Solar cell and method for reducing the serial resistance of solar cells |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101226968A (en) |
| WO (1) | WO2008089657A1 (en) |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013020590A1 (en) * | 2011-08-09 | 2013-02-14 | Kioto Photovoltaics Gmbh | Rectangular solar cell and associated solar cell arrangement |
| US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
| US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9461189B2 (en) | 2012-10-04 | 2016-10-04 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
| US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| US9496427B2 (en) | 2013-01-11 | 2016-11-15 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9590132B2 (en) | 2014-12-05 | 2017-03-07 | Solarcity Corporation | Systems and methods for cascading photovoltaic structures |
| US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
| US9685579B2 (en) | 2014-12-05 | 2017-06-20 | Solarcity Corporation | Photovoltaic structure cleaving system |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| US9793421B2 (en) | 2014-12-05 | 2017-10-17 | Solarcity Corporation | Systems, methods and apparatus for precision automation of manufacturing solar panels |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
| US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
| US9887306B2 (en) | 2011-06-02 | 2018-02-06 | Tesla, Inc. | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| US9991412B2 (en) | 2014-12-05 | 2018-06-05 | Solarcity Corporation | Systems for precision application of conductive adhesive paste on photovoltaic structures |
| US10043937B2 (en) | 2014-12-05 | 2018-08-07 | Solarcity Corporation | Systems and method for precision automated placement of backsheet on PV modules |
| US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
| US10084107B2 (en) | 2010-06-09 | 2018-09-25 | Tesla, Inc. | Transparent conducting oxide for photovoltaic devices |
| US10084099B2 (en) | 2009-11-12 | 2018-09-25 | Tesla, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| US10236406B2 (en) | 2014-12-05 | 2019-03-19 | Solarcity Corporation | Systems and methods for targeted annealing of photovoltaic structures |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| EP3506134A3 (en) * | 2014-05-27 | 2019-07-31 | SunPower Corporation | Shingled solar cell module |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101964379B (en) * | 2010-08-16 | 2013-08-07 | 福建铂阳精工设备有限公司 | Thin film solar cell template current density compensation method |
| DE202011108836U1 (en) * | 2011-12-08 | 2011-12-29 | Grenzebach Maschinenbau Gmbh | Apparatus for the industrial production of photovoltaic concentrator modules |
| DE202011109424U1 (en) * | 2011-12-23 | 2012-01-20 | Grenzebach Maschinenbau Gmbh | Device for industrial wiring and final testing of photovoltaic concentrator modules |
| CN104659122B (en) * | 2015-02-07 | 2017-06-16 | 秦皇岛博硕光电设备股份有限公司 | A kind of connection method of crystal-silicon battery slice and crystal silicon battery component and crystal-silicon battery slice |
| CN205303477U (en) * | 2015-05-22 | 2016-06-08 | 苏州沃特维自动化***有限公司 | Solar wafer , solar module and battery piece unit thereof |
| CN104882504A (en) * | 2015-06-17 | 2015-09-02 | 浙江晶科能源有限公司 | Solar module structure |
| CN108713256A (en) * | 2016-02-24 | 2018-10-26 | 太阳能公司 | Solar panel |
| CN107134500A (en) * | 2017-05-05 | 2017-09-05 | 常州天合光能有限公司 | Small dimension solar cell, solar cell and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3769091A (en) * | 1972-03-31 | 1973-10-30 | Us Navy | Shingled array of solar cells |
| CN86102164A (en) * | 1985-04-01 | 1987-01-14 | 索冯尼克斯太阳能***公司 | Increase the photocell of effective area |
| JPS62195185A (en) * | 1986-02-21 | 1987-08-27 | Sharp Corp | Amorphous solar battery module |
| US4877460A (en) * | 1987-03-17 | 1989-10-31 | Telefunken Electronic Gmbh | Solar cell module |
| JPH06268241A (en) * | 1993-03-15 | 1994-09-22 | Fuji Electric Co Ltd | Thin-film solar cell and manufacture thereof |
| US6414235B1 (en) * | 1999-03-30 | 2002-07-02 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| WO2004066400A1 (en) * | 2003-01-24 | 2004-08-05 | Stichting Energieonderzoek Centrum Nederland | Coupling device for thin-film photovoltaic cells |
-
2007
- 2007-01-17 CN CNA2007100077003A patent/CN101226968A/en active Pending
-
2008
- 2008-01-17 WO PCT/CN2008/000127 patent/WO2008089657A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3769091A (en) * | 1972-03-31 | 1973-10-30 | Us Navy | Shingled array of solar cells |
| CN86102164A (en) * | 1985-04-01 | 1987-01-14 | 索冯尼克斯太阳能***公司 | Increase the photocell of effective area |
| JPS62195185A (en) * | 1986-02-21 | 1987-08-27 | Sharp Corp | Amorphous solar battery module |
| US4877460A (en) * | 1987-03-17 | 1989-10-31 | Telefunken Electronic Gmbh | Solar cell module |
| JPH06268241A (en) * | 1993-03-15 | 1994-09-22 | Fuji Electric Co Ltd | Thin-film solar cell and manufacture thereof |
| US6414235B1 (en) * | 1999-03-30 | 2002-07-02 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
| WO2004066400A1 (en) * | 2003-01-24 | 2004-08-05 | Stichting Energieonderzoek Centrum Nederland | Coupling device for thin-film photovoltaic cells |
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10084099B2 (en) | 2009-11-12 | 2018-09-25 | Tesla, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US10084107B2 (en) | 2010-06-09 | 2018-09-25 | Tesla, Inc. | Transparent conducting oxide for photovoltaic devices |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| US9887306B2 (en) | 2011-06-02 | 2018-02-06 | Tesla, Inc. | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
| WO2013020590A1 (en) * | 2011-08-09 | 2013-02-14 | Kioto Photovoltaics Gmbh | Rectangular solar cell and associated solar cell arrangement |
| US9461189B2 (en) | 2012-10-04 | 2016-10-04 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
| US9502590B2 (en) | 2012-10-04 | 2016-11-22 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
| US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
| US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
| US10115839B2 (en) | 2013-01-11 | 2018-10-30 | Tesla, Inc. | Module fabrication of solar cells with low resistivity electrodes |
| US9496427B2 (en) | 2013-01-11 | 2016-11-15 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US10164127B2 (en) | 2013-01-11 | 2018-12-25 | Tesla, Inc. | Module fabrication of solar cells with low resistivity electrodes |
| US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
| US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
| US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
| EP3522045A1 (en) * | 2014-05-27 | 2019-08-07 | SunPower Corporation | Shingled solar cell module |
| EP3506134A3 (en) * | 2014-05-27 | 2019-07-31 | SunPower Corporation | Shingled solar cell module |
| US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
| US10236406B2 (en) | 2014-12-05 | 2019-03-19 | Solarcity Corporation | Systems and methods for targeted annealing of photovoltaic structures |
| US10043937B2 (en) | 2014-12-05 | 2018-08-07 | Solarcity Corporation | Systems and method for precision automated placement of backsheet on PV modules |
| US10672938B2 (en) | 2014-12-05 | 2020-06-02 | Solarcity Corporation | Photovoltaic structure cleaving system |
| US9685579B2 (en) | 2014-12-05 | 2017-06-20 | Solarcity Corporation | Photovoltaic structure cleaving system |
| US9590132B2 (en) | 2014-12-05 | 2017-03-07 | Solarcity Corporation | Systems and methods for cascading photovoltaic structures |
| US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
| US9991412B2 (en) | 2014-12-05 | 2018-06-05 | Solarcity Corporation | Systems for precision application of conductive adhesive paste on photovoltaic structures |
| US9793421B2 (en) | 2014-12-05 | 2017-10-17 | Solarcity Corporation | Systems, methods and apparatus for precision automation of manufacturing solar panels |
| US10230017B2 (en) | 2014-12-05 | 2019-03-12 | Solarcity Corporation | Systems and methods for cascading photovoltaic structures |
| US10181536B2 (en) | 2015-10-22 | 2019-01-15 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
| US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
| US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
| US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101226968A (en) | 2008-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2008089657A1 (en) | Solar cell and method for reducing the serial resistance of solar cells | |
| AU2007356610B2 (en) | Solar cell | |
| KR20100107258A (en) | Sollar cell and fabrication method thereof | |
| KR20160010536A (en) | Solar battery cell, method for producing same, and solar battery module | |
| CN102222726A (en) | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation | |
| JP2015130527A (en) | Solar battery and manufacturing method of the same | |
| JPWO2011024264A1 (en) | Solar cell and manufacturing method thereof | |
| WO2011074280A1 (en) | Photovoltaic device and method for preparation thereof | |
| US11824130B2 (en) | Solar cell having a plurality of sub-cells coupled by cell level interconnection | |
| TWI424582B (en) | Method of fabricating solar cell | |
| TWI493605B (en) | Fabricating method of backside electrode layer | |
| JP2023507176A (en) | Bifacial tandem solar cells and modules | |
| JP5430773B2 (en) | Photovoltaic device and manufacturing method thereof | |
| KR20170143074A (en) | Bifacial silicon solar cell and method for manufacturing the same | |
| TWI415280B (en) | Light power device and manufacturing method thereof | |
| TWI415272B (en) | Method of fabricating rear surface point contact of solar cells | |
| TWI407576B (en) | Method of manufacturing a differential doped solar cell | |
| KR20110003787A (en) | Solar cell and method for manufacturing the same | |
| KR101889776B1 (en) | Solar cell and method for manufacturing the same, and solar cell module | |
| CN215815895U (en) | Battery piece and photovoltaic module with same | |
| JP2011018748A (en) | Method of manufacturing solar battery cell | |
| CN215933617U (en) | Battery piece and photovoltaic module with same | |
| CN220543926U (en) | Solar cell and photovoltaic module | |
| JP6125042B2 (en) | Method for manufacturing solar battery cell | |
| CN211507649U (en) | Efficient half solar cell and assembly without laser cutting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08700676 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 08700676 Country of ref document: EP Kind code of ref document: A1 |