WO2008084834A1 - Gan semiconductor light emitting element - Google Patents
Gan semiconductor light emitting element Download PDFInfo
- Publication number
- WO2008084834A1 WO2008084834A1 PCT/JP2008/050213 JP2008050213W WO2008084834A1 WO 2008084834 A1 WO2008084834 A1 WO 2008084834A1 JP 2008050213 W JP2008050213 W JP 2008050213W WO 2008084834 A1 WO2008084834 A1 WO 2008084834A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact layer
- type gan
- gan contact
- light emitting
- emitting element
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
Provided is a GaN semiconductor light emitting element wherein Au diffusion is prevented in a transparent electrode composed of a metal multilayer film including an Au film. On a sapphire substrate (1), a GaN buffer layer (2), an n-type GaN contact layer (3), an MQW active layer (4) and a p-type GaN contact layer (5) are laminated in sequence. An n-side pad electrode (8) is formed on a surface from which the n-type GaN contact layer (3) is exposed. A metal multilayer film transparent electrode (6) arranged over the entire p-type GaN contact layer (5) is, for instance, composed of Ni/Au/Ti/Ni from the side of the P-type GaN contact layer (5). Diffusion of Au is prevented by having Ti as an Au diffusion preventing metal layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-003457 | 2007-01-11 | ||
| JP2007003457A JP2008171997A (en) | 2007-01-11 | 2007-01-11 | Gan-based semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008084834A1 true WO2008084834A1 (en) | 2008-07-17 |
Family
ID=39608721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2008/050213 WO2008084834A1 (en) | 2007-01-11 | 2008-01-10 | Gan semiconductor light emitting element |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008171997A (en) |
| TW (1) | TW200835000A (en) |
| WO (1) | WO2008084834A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182050A (en) * | 2007-01-24 | 2008-08-07 | Mitsubishi Chemicals Corp | GaN-BASED LIGHT-EMITTING DIODE ELEMENT |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5211996B2 (en) * | 2008-09-30 | 2013-06-12 | 豊田合成株式会社 | Light emitting device |
| KR101761834B1 (en) * | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | Wafer level led package and method of fabricating the same |
| JP2012175089A (en) | 2011-02-24 | 2012-09-10 | Fujitsu Ltd | Semiconductor device and method of manufacturing semiconductor device |
| KR101737981B1 (en) | 2011-05-17 | 2017-05-22 | 한국전자통신연구원 | GAlIUM-NITRIDE LIGHT EMITTING DEVICE OF MICROARRAY TYPE STRUCTURE AND MANUFACTURING THEREOF |
| CN103489887B (en) * | 2013-09-14 | 2016-04-13 | 江苏新广联科技股份有限公司 | For insulation system and the manufacturing process thereof of GaN base semi-conductor LED chips |
| JP2016103646A (en) * | 2015-12-14 | 2016-06-02 | 富士通株式会社 | Semiconductor device and method of manufacturing semiconductor device |
| CN112885717A (en) * | 2021-01-15 | 2021-06-01 | 广州爱思威科技股份有限公司 | Metal electrode of semiconductor device, method for manufacturing the same, and use thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145076A (en) * | 1997-11-11 | 1999-05-28 | Sony Corp | Ohmic electrode, its forming method and laminate for ohmic electrode |
| JPH11150297A (en) * | 1997-11-14 | 1999-06-02 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| JPH11274554A (en) * | 1998-03-26 | 1999-10-08 | Toshiba Corp | P-side electrode of iii-v group compound semiconductor light emitting element and iii-v group compound semiconductor light emitting element |
| JP3068914U (en) * | 1999-11-11 | 2000-05-26 | 洲磊科技股▲ふん▼有限公司 | Flip-chip light emitting device |
| US20020000643A1 (en) * | 1996-05-31 | 2002-01-03 | Toshiya Uemura | Devices related to electrode pads for p-type group iii nitride compound semiconductors |
| EP1276186A1 (en) * | 2000-02-16 | 2003-01-15 | Nichia Corporation | Nitride semiconductor laser device |
| JP2004040061A (en) * | 2002-07-08 | 2004-02-05 | Sumitomo Chem Co Ltd | Electrode for group iii-v compound semiconductor, manufacturing method thereof, and semiconductor light emitting element using the same |
| US20060081834A1 (en) * | 2004-10-18 | 2006-04-20 | Sanken Electric Co., Ltd. | Semiconductor luminescent device and manufacturing method thereof |
-
2007
- 2007-01-11 JP JP2007003457A patent/JP2008171997A/en not_active Withdrawn
-
2008
- 2008-01-10 WO PCT/JP2008/050213 patent/WO2008084834A1/en active Application Filing
- 2008-01-11 TW TW97101239A patent/TW200835000A/en unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000643A1 (en) * | 1996-05-31 | 2002-01-03 | Toshiya Uemura | Devices related to electrode pads for p-type group iii nitride compound semiconductors |
| JPH11145076A (en) * | 1997-11-11 | 1999-05-28 | Sony Corp | Ohmic electrode, its forming method and laminate for ohmic electrode |
| JPH11150297A (en) * | 1997-11-14 | 1999-06-02 | Nichia Chem Ind Ltd | Nitride semiconductor light-emitting element |
| JPH11274554A (en) * | 1998-03-26 | 1999-10-08 | Toshiba Corp | P-side electrode of iii-v group compound semiconductor light emitting element and iii-v group compound semiconductor light emitting element |
| JP3068914U (en) * | 1999-11-11 | 2000-05-26 | 洲磊科技股▲ふん▼有限公司 | Flip-chip light emitting device |
| EP1276186A1 (en) * | 2000-02-16 | 2003-01-15 | Nichia Corporation | Nitride semiconductor laser device |
| JP2004040061A (en) * | 2002-07-08 | 2004-02-05 | Sumitomo Chem Co Ltd | Electrode for group iii-v compound semiconductor, manufacturing method thereof, and semiconductor light emitting element using the same |
| US20060081834A1 (en) * | 2004-10-18 | 2006-04-20 | Sanken Electric Co., Ltd. | Semiconductor luminescent device and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182050A (en) * | 2007-01-24 | 2008-08-07 | Mitsubishi Chemicals Corp | GaN-BASED LIGHT-EMITTING DIODE ELEMENT |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008171997A (en) | 2008-07-24 |
| TW200835000A (en) | 2008-08-16 |
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