WO2008018861A1 - Copper(i) complexes and processes for deposition of copper films by atomic layer deposition - Google Patents
Copper(i) complexes and processes for deposition of copper films by atomic layer deposition Download PDFInfo
- Publication number
- WO2008018861A1 WO2008018861A1 PCT/US2006/030707 US2006030707W WO2008018861A1 WO 2008018861 A1 WO2008018861 A1 WO 2008018861A1 US 2006030707 W US2006030707 W US 2006030707W WO 2008018861 A1 WO2008018861 A1 WO 2008018861A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alkyl
- copper
- independently selected
- substrate
- fluorine
- Prior art date
Links
- 239000010949 copper Substances 0.000 title claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000008569 process Effects 0.000 title claims abstract description 32
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 15
- 238000000151 deposition Methods 0.000 title abstract description 5
- 230000008021 deposition Effects 0.000 title abstract description 4
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical class [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 150000004699 copper complex Chemical class 0.000 claims description 29
- 125000004178 (C1-C4) alkyl group Chemical class 0.000 claims description 26
- 239000003638 chemical reducing agent Substances 0.000 claims description 26
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 claims description 14
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo(3.3.1)nonane Chemical compound C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 claims description 12
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 9
- 150000001336 alkenes Chemical class 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical group C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 150000001345 alkine derivatives Chemical class 0.000 claims description 6
- 150000002825 nitriles Chemical class 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 5
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 claims description 5
- 150000003003 phosphines Chemical class 0.000 claims description 5
- 229910000085 borane Inorganic materials 0.000 claims description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical group [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 4
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical group C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 claims description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 3
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 150000004756 silanes Chemical group 0.000 claims description 3
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910000071 diazene Inorganic materials 0.000 abstract description 8
- 239000007787 solid Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 18
- 239000003446 ligand Substances 0.000 description 14
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 12
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 239000000706 filtrate Substances 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 7
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000012691 Cu precursor Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000001879 copper Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- -1 diborane Chemical compound 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- YNCMRVDNXNABIR-UHFFFAOYSA-N n-ethylcyclopentanimine Chemical compound CCN=C1CCCC1 YNCMRVDNXNABIR-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- 239000011369 resultant mixture Substances 0.000 description 3
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 2
- AFJNHORZDNWILJ-UHFFFAOYSA-N 2-(C,N-dimethylcarbonimidoyl)-N-ethylcyclopentan-1-imine Chemical compound N(CC)=C1C(CCC1)C(=NC)C AFJNHORZDNWILJ-UHFFFAOYSA-N 0.000 description 2
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- VBLSRAWDDPHMIP-UHFFFAOYSA-N N-ethyl-2-(N-ethyl-C-methylcarbonimidoyl)cyclopentan-1-imine Chemical compound N(CC)=C1C(CCC1)C(C)=NCC VBLSRAWDDPHMIP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- VAYGXNSJCAHWJZ-UHFFFAOYSA-N dimethyl sulfate Chemical compound COS(=O)(=O)OC VAYGXNSJCAHWJZ-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- PKXHXOTZMFCXSH-UHFFFAOYSA-N 3,3-dimethylbut-1-ene Chemical compound CC(C)(C)C=C PKXHXOTZMFCXSH-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229930194542 Keto Natural products 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002168 alkylating agent Substances 0.000 description 1
- 229940100198 alkylating agent Drugs 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000005595 deprotonation Effects 0.000 description 1
- 238000010537 deprotonation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 239000012039 electrophile Substances 0.000 description 1
- 150000002081 enamines Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000004658 ketimines Chemical class 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- HYWCXWRMUZYRPH-UHFFFAOYSA-N trimethyl(prop-2-enyl)silane Chemical compound C[Si](C)(C)CC=C HYWCXWRMUZYRPH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Definitions
- the present invention relates to novel 1 ,3-diimine copper complexes.
- the invention also relates to processes for forming copper deposits on substrates or in or on porous solids, using the 1 ,3-diimine copper complexes.
- ALD Atomic layer deposition
- a copper precursor and a reducing agent are alternatively introduced into a reaction chamber. After the copper precursor is introduced into the reaction chamber and allowed to adsorb onto a substrate, the excess (unadsorbed) precursor vapor is pumped or purged from the chamber. The removal of excess precursor vapor is followed by introduction of a reducing agent that reacts with the copper precursor on the substrate surface to form copper metal and a free form of the ligand. This cycle can be repeated if needed to achieve the desired film thickness.
- the ALD process differs from chemical vapor deposition (CVD) in the decomposition chemistry of the metal complex.
- the complex undergoes pyrolytic decomposition on contact with the surface to give the desired film.
- the complex is not completely decomposed to metal on contact with the surface. Rather, formation of the metal film takes place on introduction of a second reagent, which reacts with the deposited metal complex.
- the second reagent is a reducing agent.
- Advantages of an ALD process include the ability to control the film thickness and improved conformality of coverage because of the self-limiting adsorption of the precursor to the substrate surface in the first step of the process.
- the ligands used in the ALD processes are desirably stable with respect to decomposition and should be able to desorb from the complex in a metal-free form. Following reduction of the copper, the ligand is liberated and must be removed from the surface to prevent its incorporation into the metal layer being formed.
- US 2003/0135061 discloses a dimeric copper(l) precursor which can be used to deposit metal or metal-containing films on a substrate under ALD or CVD conditions.
- One aspect of this invention is a process for forming copper deposits on a substrate comprising: a. contacting a substrate with a copper complex, (I), to form a deposit of a copper complex on the substrate; and
- L is selected from the group consisting of C 2 - C 15 olefins, C 2 - Ci 5 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2; R 1 and R 2 are independently selected from the group consisting of H, C 1 - C 4 alkyl, fluorine-substituted CrC 4 alkyl, and Si(R 4 J 3 , where each R 4 is independently C-1-C4 alkyl;
- Another aspect of the present invention is an article comprising a 1,3-diimine copper complex, (I), deposited on a substrate.
- a further aspect of the present invention is a composition corresponding to copper complex, (I).
- a further aspect of the invention is a composition corresponding to ligand, (II),
- R 1 and R 2 are independently selected from the group consisting of H, C 1 - C 4 alkyl, fluorine-substituted C 1 -C 4 alkyl, and Si(R 4 ) 3 , where each R 4 is independently C 1 -C 4 alkyl; and R 3 is independently selected from CrC 4 alkyl, fluorine-substituted d-C 4 alkyl, and Si(R 4 ) 3 , where each R 4 is independently C 1 -C 4 alkyl.
- ALD atomic layer deposition
- the complexes decompose to metal on addition of a suitable reducing agent.
- the ligands are further chosen so that they will desorb without decomposition upon exposure of the copper complex to a reducing agent.
- the reduction of these copper complexes to copper metal by commercially available reducing agents has been demonstrated to proceed cleanly at moderate temperatures.
- copper is deposited on a substrate by: a. contacting a substrate with a copper complex, (I), to form a deposit of a copper complex on the substrate; and
- L is selected from the group consisting of C 2 - C15 olefins, C 2 - C15 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
- the present deposition processes allow the use of relatively low temperatures (e.g., about 0 to 200 0 C) and produce high quality, uniform films. Desirable films are continuous and conductive. The processes also provide a direct route to a copper film, avoiding the need for formation of an intermediate oxide film.
- the copper can be deposited on the surface, or in and/or on porosity, of the substrate.
- Suitable substrates include conducting, semiconducting and insulating substrates, including copper, silicon wafers, wafers used in the manufacture of ultra large scale integrated circuits, wafers prepared with dielectric material having a lower dielectric constant than silicon dioxide, and silicon dioxide and low k substrates coated with a barrier layer.
- Barrier layers to prevent the migration of copper include tantalum, tantalum nitride, titanium, titanium nitride, tantalum silicon nitride, titanium silicon nitride, tantalum carbon nitride, and niobium nitride.
- the processes can be conducted in solution, i.e., by contacting a solution of the copper complex with the reducing agent.
- the free form of the ligand can be removed, for example, via vacuum, purging, heating, rinsing with a suitable solvent, or a combination of such methods. This process can be repeated to build up thicker layers of copper, or to eliminate pin-holes.
- the deposition of the copper complex is typically conducted at 0 to 200 0 C.
- the reduction of the copper complex is typically carried out at similar temperatures, 0 to 200 0 C, more preferably 50 to 150 0 C.
- a copper complex is deposited on the substrate.
- the formation of a metallic copper film does not occur until the copper complex is exposed to the reducing agent.
- Aggressive reducing agents are preferred to reduce the copper complex rapidly and completely. Suitable reducing agents are volatile and do not decompose on heating. "Aggressive reducing agents" are of sufficient reducing power to react rapidly on contact with the copper complex deposited on the substrate surface. Suitable reducing agents have been identified that have been used for copper(l) reduction in an ALD process, as disclosed, for example, in patent publication WO 2004/094689. One feature of these reagents is the presence of a proton donor. The reducing agent is desirably able to transfer at least one electron to reduce the copper ion of the complex and at least one proton to protonate the ligand.
- the oxidized reducing agent and the protonated ligand be able to be easily removed from the surface of the newly formed copper deposit.
- the protonated ligand is removed by vacuum, by purging or by flushing the surface with a suitable solvent.
- Suitable reducing agents for the copper deposition processes include 9-BBN, borane, diborane, dihydrobenzofuran, pyrazoline, germanes, diethylsilane, dimethylsilane, ethylsilane, phenylsilane, silane and disilane. Diethylsilane and silane are preferred.
- the copper complexes are admitted to a reactor chamber containing the substrate under conditions of temperature, time and pressure to attain a suitable fluence of vaporized complex to the surface of the substrate.
- time, T, P The selection of these variables (time, T, P) will depend on individual chamber and system design, and the desired process rate, but as a general guideline, temperatures within the range of about O to 200 0 C; pressures within the range of about 100 to 180 mTorr; and a time period of at least 30 seconds to 1 minute can be used.
- the undeposited complex vapor is removed from the chamber (e.g., by pumping or purging) and the reducing agent is introduced into the chamber at a pressure of about 50 to 760 mTorr to reduce the adsorbed copper complex.
- the substrate is held at a temperature of about 0 to 200 0 C during reduction.
- this reduction is rapid (i.e., can generally be completed within a time range of one second to several minutes for most complexes) and substantially complete (e.g., about 95% complete or more).
- the reaction is at least 95% complete within an exposure time of from less than one second to several minutes. It is desired that the products from this reaction are readily removed from the surface of the substrate under the reducing conditions.
- This invention also provides novel 1 ,3-diimine copper complexes,
- L is selected from the group consisting of C 2 - Ci 5 olefins, C 2 - Ci 5 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
- R 1 and R 2 are independently selected from the group consisting of H, Ci-
- L is a linear, terminal olefin.
- L can also be an internal olefin of cis- or trans-configuration; cis-configuration is preferred.
- L can be a cyclic or bicyclic olefin.
- L can also be substituted, for example with fluorine or silyl groups.
- Suitable olefins include, but are not limited to, vinyltrimethylsilane, allyltrimethylsilane, 1-hexene, 4-methyl-1-pentene, 3,3-dimethyl-1-butene, and norbomene.
- L can also be alkyne, nitrile, or an aromatic nitrogen heterocycle such as pyridine, pyrazine, triazine, or ⁇ /-substituted imidazole, pyrazole, ortriazole.
- L can also be a phosphine. This invention also provides ligands of Formula (II)
- R 1 and R 2 are independently selected from the group consisting of H, Cr C 4 alkyl, fluorine-substituted CrC 4 alkyl, and Si(R 4 ) 3 , where each R 4 is independently CrC 4 alkyl;
- R 3 is independently selected from CrC 4 alkyl, fluorine-substituted CrC 4 alkyl, and Si(R 4 ) 3 , where each R 4 is independently CrC 4 alkyl.
- R 3 is a C 2 -C 4 alkyl group, it can also contain a silylene group in the alkyl chain, e.g., -CH 2 SiH 2 CH 3 or -CH 2 Si(H)(CH 3 )CH 3 or -CH 2 Si(CHg) 2 CH 3 .
- 1-aza-1- cycloalkylidenealkane can be depronated by strong base, then treated with an electrophile such as an ester or acid halide derivative to provide the corresponding keto exocyclic enamine as an intermediate.
- Treatment of this intermediate with an alkylating agent such as dimethylsulfate, followed by the addition of a primary amine affords the desired exocyclic diketimine.
- the exocyclic ketimine after deprotonation by strong base, can be directly coupled with an imidoyl derivative to provide the desired ⁇ -diketimine.
- Other ligands can be prepared similarly.
- this invention provides an article comprising a 1 ,3-diimine copper complex of structure (I), deposited on a substrate.
- Suitable substrates include: copper, silicon wafers, wafers used in the manufacture of ultra-large scale integrated circuits, wafers prepared with dielectric material having a lower dielectric constant than silicon dioxide, and silicon dioxide and low k substrates coated with a barrier layer.
- Barrier layers can be used to prevent the migration of copper into the substrate.
- Suitable barrier layers include: tantalum, tantalum nitride, titanium, titanium nitride, tantalum silicon nitride, titanium silicon nitride, tantalum carbon nitride, and niobium nitride.
- the viscous oil was used as a copper precursor to create a copper film on a substrate.
- the substrate consisted of a silicon dioxide wafer with 250-Angstrom layer of tantalum and a 100 Angstrom layer of copper.
- Approximately 0.04 g of copper precursor was loaded in the dry box into a porcelain boat.
- the boat and wafer ( ⁇ 1 cm 2 ) were placed in a glass tube approximately 3.5 inches apart.
- the glass tube was removed from the dry box and attached to a vacuum line. Heating coils were attached to the glass tube surrounding both the area around the porcelain boat and the area around the wafer chip. This configuration allows the two areas to be maintained at different temperatures.
- an argon flow was created through the tube, passing first over the sample in the boat and then over the wafer.
- the pressure inside the tube was maintained at 100-180 mTorr.
- the region around the wafer was warmed to 120 0 C. After approximately an hour, the temperature of the region around the sample boat was raised to 60 0 C.
- the area around the sample boat was then cooled to room temperature.
- the tube was evacuated to a pressure of -10 mTorr and was back-filled with diethylsilane.
- the area of the tube at 110 0 C quickly turned a copper color.
- the apparatus was cooled and returned to the dry box. The copper color was perceptibly darker. The process was repeated to yield a wafer with a smooth copper film.
- methyl ⁇ /-methylthioacetimidate (5.3 g, 51.5 mmol) was added dropwise over 30 min at -78 0 C.
- the reaction mixture was stirred as the temperature was allowed to gradually rise to room temperature, and was then continuously stirred at room temperature overnight.
- THF solvent was removed under reduced pressure, then 30 mL of methanol was added dropwise to the residue.
- pentane 50 mL x 2 was added to the residue, and the mixture was filtered.
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Abstract
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.
Description
TITLE
COPPER(I) COMPLEXES AND PROCESSES FOR DEPOSITION OF COPPER FILMS BY ATOMIC LAYER DEPOSITION
FIELD OF THE INVENTION The present invention relates to novel 1 ,3-diimine copper complexes. The invention also relates to processes for forming copper deposits on substrates or in or on porous solids, using the 1 ,3-diimine copper complexes.
BACKGROUND Atomic layer deposition (ALD) processes are useful for the creation of thin films, as described by M. Ritala and M. Leskela in "Atomic Layer Deposition" in Handbook of Thin Film Materials, H. S. Nalwa, Editor, Academic Press, San Diego, 2001 , Volume 1 , Chapter 2. Such films, especially metal and metal oxide films, are critical components in the manufacture of electronic circuits and devices.
In an ALD process for depositing copper films, a copper precursor and a reducing agent are alternatively introduced into a reaction chamber. After the copper precursor is introduced into the reaction chamber and allowed to adsorb onto a substrate, the excess (unadsorbed) precursor vapor is pumped or purged from the chamber. The removal of excess precursor vapor is followed by introduction of a reducing agent that reacts with the copper precursor on the substrate surface to form copper metal and a free form of the ligand. This cycle can be repeated if needed to achieve the desired film thickness. The ALD process differs from chemical vapor deposition (CVD) in the decomposition chemistry of the metal complex. In a CVD process, the complex undergoes pyrolytic decomposition on contact with the surface to give the desired film. In an ALD process, the complex is not completely decomposed to metal on contact with the surface. Rather, formation of the metal film takes place on introduction of a second reagent, which reacts with the deposited metal complex. In the preparation of a copper film from a copper(l) complex, the second reagent is a reducing agent. Advantages of an ALD process include the ability to control the film thickness and
improved conformality of coverage because of the self-limiting adsorption of the precursor to the substrate surface in the first step of the process.
The ligands used in the ALD processes are desirably stable with respect to decomposition and should be able to desorb from the complex in a metal-free form. Following reduction of the copper, the ligand is liberated and must be removed from the surface to prevent its incorporation into the metal layer being formed.
US 2003/0135061 discloses a dimeric copper(l) precursor which can be used to deposit metal or metal-containing films on a substrate under ALD or CVD conditions.
SUMMARY OF THE INVENTION
One aspect of this invention is a process for forming copper deposits on a substrate comprising: a. contacting a substrate with a copper complex, (I), to form a deposit of a copper complex on the substrate; and
L is selected from the group consisting of C2- C15 olefins, C2- Ci5 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, C1- C4 alkyl, fluorine-substituted CrC4 alkyl, and Si(R4J3, where each R4 is independently C-1-C4 alkyl;
R3 is independently selected from C1-C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl; and the reducing agent is selected from the group consisting of 9-BBN (9- borabicyclo[3.3.1]nonane); diborane; boranes of the form BRXH3-X, where x = 0, 1 or 2, and R is independently selected from phenyl and C1-C10 alkyl groups; dihydrobenzofuran; pyrazoline; disilane; silanes of the form SiR'yH4-y, where y = 0, 1 , 2 or 3, and R' is independently selected from phenyl and C1-C10 alkyl groups; and germanes of the form GeR"2H4-z, where z = 0, 1, 2, or 3, and R" is independently selected from phenyl and C1-C10 alkyl groups.
Another aspect of the present invention is an article comprising a 1,3-diimine copper complex, (I), deposited on a substrate.
A further aspect of the present invention is a composition corresponding to copper complex, (I).
A further aspect of the invention is a composition corresponding to ligand, (II),
(H) wherein n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, C1- C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl; and
R3 is independently selected from CrC4 alkyl, fluorine-substituted d-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl.
DETAILED DESCRIPTION
Applicants have discovered an atomic layer deposition (ALD) process suitable for creation of copper films for use as seed layers in the formation of copper interconnects in integrated circuits, or for use in decorative or catalytic applications. This process uses copper(l) complexes that are volatile at temperatures of about 50 to 120 0C at 350 mTorr to 1 Torr, thermally stable at conditions of 50 to 150 0C at 350 mTorr to 1 Torr, and derived from ligands that contain C, H, and N, but are not limited to these elements. The ligands are chosen so as to form copper(l) complexes that are volatile in an appropriate temperature range but do not decompose to copper metal in this temperature range. Rather, the complexes decompose to metal on addition of a suitable reducing agent. The ligands are further chosen so that they will desorb without decomposition upon exposure of the copper complex to a reducing agent. The reduction of these copper complexes to copper metal by commercially available reducing agents has been demonstrated to proceed cleanly at moderate temperatures. In a process of this invention, copper is deposited on a substrate by: a. contacting a substrate with a copper complex, (I), to form a deposit of a copper complex on the substrate; and
L is selected from the group consisting of C2- C15 olefins, C2- C15 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, Cr C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3) where each R4 is independently CrC4 alkyl; R3 is independently selected from CrC4 alkyl, fluorine-substituted C1-C4 alkyl, and (R4^Si, where each R4 is independently C1-C4 alkyl; and the reducing agent is selected from the group consisting of 9-BBN (9- borabicyclo[3.3.1]nonane); diborane; boranes of the form BRXH3-X, where x = 0, 1 or 2, and R is independently selected from phenyl and C1-C10 alkyl groups; dihydrobenzofuran; pyrazoline; disilane; silanes of the form SiR'yHU-y, where y = 0, 1 , 2 or 3, and R' is independently selected from phenyl and C1-C10 alkyl groups; and germanes of the form GeR"zH4-z, where z = 0, 1 , 2, or 3, and R" is independently selected from phenyl and C1-C10 alkyl groups.
The present deposition processes allow the use of relatively low temperatures (e.g., about 0 to 200 0C) and produce high quality, uniform films. Desirable films are continuous and conductive. The processes also provide a direct route to a copper film, avoiding the need for formation of an intermediate oxide film.
In one embodiment of a copper deposition process, the copper can be deposited on the surface, or in and/or on porosity, of the substrate. Suitable substrates include conducting, semiconducting and insulating substrates, including copper, silicon wafers, wafers used in the manufacture of ultra large scale integrated circuits, wafers prepared with dielectric material having a lower dielectric constant than silicon dioxide, and silicon dioxide and low k substrates coated with a barrier layer. Barrier layers to prevent the migration of copper include tantalum, tantalum nitride, titanium, titanium nitride, tantalum silicon nitride, titanium silicon nitride, tantalum carbon nitride, and niobium nitride.
In some embodiments, the processes can be conducted in solution, i.e., by contacting a solution of the copper complex with the reducing agent. However, it may be preferred in some embodiments to expose the substrate to a vapor of the copper complex, and then remove any excess copper complex (i.e., undeposited complex) by vacuum or purging before exposing the deposited complex to a vapor of the reducing agent. After reduction of the copper complex, the free form of the ligand can be removed, for example, via vacuum, purging, heating, rinsing with a suitable solvent, or a combination of such methods. This process can be repeated to build up thicker layers of copper, or to eliminate pin-holes.
The deposition of the copper complex is typically conducted at 0 to 200 0C. The reduction of the copper complex is typically carried out at similar temperatures, 0 to 200 0C, more preferably 50 to 150 0C. Initially a copper complex is deposited on the substrate. The formation of a metallic copper film does not occur until the copper complex is exposed to the reducing agent.
Aggressive reducing agents are preferred to reduce the copper complex rapidly and completely. Suitable reducing agents are volatile and do not decompose on heating. "Aggressive reducing agents" are of sufficient reducing power to react rapidly on contact with the copper complex deposited on the substrate surface. Suitable reducing agents have been identified that have been used for copper(l) reduction in an ALD process, as disclosed, for example, in patent publication WO 2004/094689. One feature of these reagents is the presence of a proton donor. The reducing agent is desirably able to transfer at least one electron to reduce the copper ion of the complex and at least one proton to protonate the ligand. It is also desirable that the oxidized reducing agent and the protonated ligand be able to be easily removed from the surface of the newly formed copper deposit. Preferably, the protonated ligand is removed by vacuum, by purging or by flushing the surface with a suitable solvent.
Suitable reducing agents for the copper deposition processes include 9-BBN, borane, diborane, dihydrobenzofuran, pyrazoline, germanes, diethylsilane, dimethylsilane, ethylsilane, phenylsilane, silane and disilane. Diethylsilane and silane are preferred. In one embodiment of a copper deposition process, the copper complexes are admitted to a reactor chamber containing the substrate under conditions of temperature, time and pressure to attain a suitable fluence of vaporized complex to the surface of the substrate. The selection of these variables (time, T, P) will depend on individual chamber and system design, and the desired process rate, but as a general guideline, temperatures within the range of about O to 200 0C; pressures within the range of about 100 to 180 mTorr; and a time period of at least 30 seconds to 1 minute can be used. After at least a portion of the copper complex has been deposited on the substrate, the undeposited complex vapor is removed from the chamber (e.g., by pumping or purging) and the reducing agent is introduced into the chamber at a pressure of about 50 to 760 mTorr to reduce the adsorbed copper complex. The substrate is held at a temperature of about 0 to 200 0C during reduction. With suitable combinations of copper complex and reducing agent, this reduction is rapid (i.e., can generally be completed within a time range of one second to several minutes for most complexes) and substantially complete (e.g., about 95% complete or more). Desirably, the reaction is at least 95% complete within an exposure time of from less than one second to several minutes. It is desired that the products from this reaction are readily removed from the surface of the substrate under the reducing conditions.
In one embodiment, the copper complex is a copper 1,3-diimine complex (I), wherein R1 and R2 are ethyl groups, R3 is a methyl group, n = 1 , L= vinyltrimethylsilane, and the reducing agent is diethylsilane. This invention also provides novel 1 ,3-diimine copper complexes,
(D.
(D wherein
L is selected from the group consisting of C2- Ci5 olefins, C2- Ci5 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, Ci-
C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently CrC4 alkyl; and R3 is independently selected from C1-C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl.
In one embodiment, L is a linear, terminal olefin. For olefins of 4 -
15 carbons, L can also be an internal olefin of cis- or trans-configuration; cis-configuration is preferred. L can be a cyclic or bicyclic olefin. L can also be substituted, for example with fluorine or silyl groups. Suitable olefins include, but are not limited to, vinyltrimethylsilane, allyltrimethylsilane, 1-hexene, 4-methyl-1-pentene, 3,3-dimethyl-1-butene, and norbomene. L can also be alkyne, nitrile, or an aromatic nitrogen heterocycle such as pyridine, pyrazine, triazine, or Λ/-substituted imidazole, pyrazole, ortriazole. L can also be a phosphine. This invention also provides ligands of Formula (II)
(H) wherein n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, Cr C4 alkyl, fluorine-substituted CrC4 alkyl, and Si(R4)3, where each R4 is independently CrC4 alkyl;
R3 is independently selected from CrC4 alkyl, fluorine-substituted CrC4 alkyl, and Si(R4)3, where each R4 is independently CrC4 alkyl. When R3 is a C2-C4 alkyl group, it can also contain a silylene group in the alkyl chain, e.g., -CH2SiH2CH3 or -CH2Si(H)(CH3)CH3 or -CH2Si(CHg)2CH3.
A method for the synthesis of one ligand useful for making the copper complexes is illustrated in Examples below. Thus, 1-aza-1- cycloalkylidenealkane can be depronated by strong base, then treated with an electrophile such as an ester or acid halide derivative to provide the corresponding keto exocyclic enamine as an intermediate. Treatment of this intermediate with an alkylating agent such as dimethylsulfate, followed by the addition of a primary amine affords the desired exocyclic diketimine. Alternatively, the exocyclic ketimine, after deprotonation by strong base, can be directly coupled with an imidoyl derivative to provide the desired β-diketimine. Other ligands can be prepared similarly.
In another embodiment, this invention provides an article comprising a 1 ,3-diimine copper complex of structure (I), deposited on a substrate. Suitable substrates include: copper, silicon wafers, wafers used in the manufacture of ultra-large scale integrated circuits, wafers prepared with dielectric material having a lower dielectric constant than silicon dioxide, and silicon dioxide and low k substrates coated with a barrier layer. Barrier layers can be used to prevent the migration of copper into the substrate. Suitable barrier layers include: tantalum, tantalum nitride,
titanium, titanium nitride, tantalum silicon nitride, titanium silicon nitride, tantalum carbon nitride, and niobium nitride.
EXAMPLES
Unless otherwise stated, all organic reagents are available from Sigma-Aldrich Corporation (Milwaukee, Wl, USA). [Cu(CH3CN)4]SO3CF3 can be prepared according to the method described in: T. Ogura, Transition Metal Chemistry, 1 , 179-182 (976).
EXAMPLE 1 Preparation of 3-Aza-2-[2-(azapropylidene)cvclopentyllpent-2-ene A mixture of cyclopentanone (21 g, 250 mmol), ethylamine (125 mL, 2.0 M solution in THF), and dried molecular sieves (100 g) in ether (300 mL) was stirred at room temperature for 3 days. The reaction mixture was filtered, and the filtrate was concentrated under reduced pressure. The concentrated filtrate was distilled under vacuum (65 0C, 10 mm Hg) to provide 1-aza-1-cyclopentylidenepropane (18 g, 65%).
7 g of 1-aza-1-cyclopentylidenepropane (62.9 mmol) in THF (5 mL) was added dropwise to an LDA solution (132.2 mmol in 250 mL THF) at -78 0C. After stirring the mixture at -10 0C for 40 min, ethylacetate (5.6 g, 62.9 mmol) was added at -78 0C. The reaction mixture was stirred as the temperature was allowed to gradually rise to room temperature, and was continuously stirred at room temperature overnight. Methanol (20 mL) was added dropwise to the mixture, then the solvent was removed under reduced pressure. After adding water (200 mL) to the residue, the mixture was extracted with ether (200 mL x 2). The combined organic layer was dried over anhydrous MgSO4, then filtered. Concentration of the filtrate under reduced pressure, followed by column chromatography provided 7.2 g of β-ketoenamine product (75%).
A mixture of 5.5 g of β-ketoenamine (35.9 mmol) and dimethylsulfate (4.53 g, 35.9 mmol) was stirred at room temperature overnight, giving a solidified mixture. Then ethylamine (24 mL, 46.7 mmol, 2.0 M in THF, 1.3 eq) was added dropwise to the mixture. After stirring the mixture at room temperature overnight, solvent was removed under reduced pressure. After adding sodium methoxide solution (1.94 g, in 20
ml_ of methanol, 35.9 mmol) to the residue, the mixture was concentrated under reduced pressure. Pentane (50 ml_) was added to the concentrated residue, then the resultant mixture was filtered. Concentrating the filtrate under reduced pressure, followed by vacuum distillation (600C, 50 mTorr) provided 5.1 g of product, 3-aza-2-[2-(azapropylidene)cyclopentyl]pent-2- ene (78 %).
EXAMPLE 2
Preparation and Reduction of Vinyltrimethylsilaner3-Aza-2-[2- (azapropylidene)cvclopentvnpent-2-enate1copper In a dry box, 3-aza-2-[2-(azapropylidene)cyclopentyl]pent-2-ene,
(0.5 g, 2.77 mmol) was dissolved in ether (10 ml_), then 1BuLi (1.63 mL, 2.77 mmol, 1.7 M in pentane) was added dropwise to the solution. The mixture was stirred at room temperature for 10 min. Meanwhile, Cu[(CH3CN)4] SO3CF3 (1.04 g, 2.77 mmol) and vinyltrimethylsilane (0.83 g, 8.31 mmol) were mixed together in ether (15 mL), and the mixture was stirred at room temperature for 10 min. The butyl lithium solution was added to the copper mixture, and the resultant mixture was stirred at room temperature for 1 h. The reaction mixture was concentrated under vacuum, followed by the addition of pentane (30 mL) to the residue. Filtration, followed by concentration of the filtrate, afforded a desired product as a viscous oil (0.88 g, 89% yield).
Reduction on a substrate: The viscous oil was used as a copper precursor to create a copper film on a substrate. The substrate consisted of a silicon dioxide wafer with 250-Angstrom layer of tantalum and a 100 Angstrom layer of copper.
Approximately 0.04 g of copper precursor was loaded in the dry box into a porcelain boat. The boat and wafer (~1 cm2) were placed in a glass tube approximately 3.5 inches apart. The glass tube was removed from the dry box and attached to a vacuum line. Heating coils were attached to the glass tube surrounding both the area around the porcelain boat and the area around the wafer chip. This configuration allows the two areas to be maintained at different temperatures. Following evacuation of the system, an argon flow was created through the tube, passing first over the
sample in the boat and then over the wafer. The pressure inside the tube was maintained at 100-180 mTorr. The region around the wafer was warmed to 120 0C. After approximately an hour, the temperature of the region around the sample boat was raised to 600C. These temperatures and gas flow were maintained for approximately 2 hours. The area around the sample boat was then cooled to room temperature. The tube was evacuated to a pressure of -10 mTorr and was back-filled with diethylsilane. The area of the tube at 110 0C quickly turned a copper color. The apparatus was cooled and returned to the dry box. The copper color was perceptibly darker. The process was repeated to yield a wafer with a smooth copper film.
EXAMPLE 3
Preparation of Vinyltrimethylsilane[2-Aza-3-f2-(azapropylidene)cvclo
-pentyllbut-2-enateicopper To a solution of diisopropylamine (10.9 g, 108.1 mmol) in THF (250 ml_) was dropwise added n-BuLi (2.89 M, 37.6 mL, 108.1 mmol) at -78 0C under nitrogen. Once all the n-BuLi was added, the temperature was adjusted to -5 0C, and the reaction mixture was stirred for 30 min. Then a solution of 1-aza-1-cyclopentylidenepropane (5 g, 51.50 mmol) in THF (10 mL) was added dropwise to the reaction mixture at -5 0C, and then stirred. After 30 min, methyl Λ/-methylthioacetimidate (5.3 g, 51.5 mmol) was added dropwise over 30 min at -78 0C. The reaction mixture was stirred as the temperature was allowed to gradually rise to room temperature, and was then continuously stirred at room temperature overnight. THF solvent was removed under reduced pressure, then 30 mL of methanol was added dropwise to the residue. After removing all of the volatile solvent, pentane (50 mL x 2) was added to the residue, and the mixture was filtered. Concentration of the filtrate under reduced pressure, followed by vacuum distillation (550C at 60 mTorr) provided 5.3 g of 2-aza-3-[2- (azapropylidene)cyclopentyl]but-2-ene (62%). In a dry box, 2-aza-3-[2- (azapropylidene)cyclopentyl]but-2-ene, (0.3 g, 1.80 mmol) was dissolved in ether (15 mL), then 1BuLi (1.06 mL, 1.80 mmol, 1.7 M in pentane) was added dropwise to the solution. The mixture was stirred at room
temperature for 10 min. Meanwhile, Cu[(CH3CN)4]SO3CF3 (0.67 g, 1.80 mmol) and vinyltrimethylsilane (0.90 g, 9.0 mmol) were mixed together in ether (15 ml_), and the mixture was stirred at room temperature for 5 min. The butyl lithium solution was added to the copper mixture, and the resultant mixture was stirred at room temperature for 40 min. The reaction mixture was concentrated under vacuum, followed by the addition of pentane (30 ml_) to the residue. Filtration, followed by concentration of the filtrate, afforded the desired product as a white solid (0.568 g, 94% yield).
Claims
1. A process for forming copper deposits on a substrate comprising: a. contacting a substrate with a copper complex, (I), to form a deposited copper complex on the substrate; and
L
L is selected from the group consisting of C2- Ci5 olefins, C2- Ci5 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, Cr C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl;
R3 is independently selected from C1-C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently selected from C-1-C4 alkyl; and the reducing agent is selected from the group consisting of 9- borabicyclo[3.3.1]nonane; diborane; boranes of the form BRXH3-X) where x = 0, 1 or 2, and R is independently selected from phenyl and C1-C10 alkyl groups; dihydrobenzofuran; pyrazoline; disilane; silanes of the form SiR'yH4-y, where y = 0, 1 , 2 or 3, and R' is independently selected from phenyl and C1-C10 alkyl groups; and germanes of the form GeR"zH4-z, where z = 0, 1 , 2, or 3, and R" is independently selected from phenyl and C-1-C10 alkyl groups.
2. The process of Claim 1 , wherein R1 and R2 are ethyl.
3. The process of Claim 1 , wherein R3 is methyl.
4. The process of Claim 1 , wherein n is 1.
5. The process of Claim 1 , wherein L is vinyltrimethylsilane.
6. The process of Claim 1 , wherein the substrate is selected from copper, silicon wafers and silicon dioxide coated with a barrier layer.
7. The process of Claim 1 , wherein the contacting comprises exposing the substrate to a vapor of the copper complex.
8. The process of Claim 1 , wherein the process is carried out at a temperature of 0 to 200 0C.
9. The process of Claim 1 , wherein the reducing agent is silane or diethylsilane.
10. A copper complex, (I),
wherein L is selected from the group consisting of C2- C15 olefins, C2- C15 alkynes, nitriles, aromatic heterocycles, and phosphines; n is 1 or 2; and
R1 and R2 are independently selected from the group consisting of H, Ci-
C4 alkyl, fluorine-substituted CrC4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl; and R3 is independently selected from C1-C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently selected from C1-C4 alkyl.
11. The copper complex (I) of Claim 10, wherein
L is vinyltrimethylsilane; R1 and R2 are methyl or ethyl, and R3 is methyl.
12. An article produced by contacting a substrate with a copper complex of Claim 10.
13. The article of Claim 12, wherein the substrate is selected from copper, silicon wafers, and silicon dioxide coated with a barrier layer.
14. The article of Claim 13, wherein the barrier layer is selected from tantalum, tantalum nitride, titanium, titanium nitride, tantalum silicon nitride, titanium silicon nitride, tantalum carbon nitride, and niobium nitride.
15. A composition of Formula (II),
(ID wherein n is 1 or 2;
R1 and R2 are independently selected from the group consisting of H, C1- C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently C1-C4 alkyl; and
R3 is independently selected from C1-C4 alkyl, fluorine-substituted C1-C4 alkyl, and Si(R4)3, where each R4 is independently selected from C1-C4 alkyl.
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US7488435B2 (en) * | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
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WO2003095701A1 (en) * | 2002-01-18 | 2003-11-20 | E.I. Du Pont De Nemours And Company | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition |
WO2004094689A2 (en) * | 2003-04-16 | 2004-11-04 | E. I. Du Pont De Nemours And Company | Volatile copper(i) complexes for deposition of copper films by atomic layer deposition |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
WO2006015200A1 (en) * | 2004-07-30 | 2006-02-09 | E.I. Dupont De Nemours And Company | Copper (ii) complexes for deposition of copper films by atomic layer deposition |
WO2006033731A2 (en) * | 2004-08-16 | 2006-03-30 | E.I. Dupont De Nemours And Company | Atomic layer deposition of copper using surface-activating agents |
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WO2003095701A1 (en) * | 2002-01-18 | 2003-11-20 | E.I. Du Pont De Nemours And Company | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition |
WO2004094689A2 (en) * | 2003-04-16 | 2004-11-04 | E. I. Du Pont De Nemours And Company | Volatile copper(i) complexes for deposition of copper films by atomic layer deposition |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
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