WO2007111126A1 - Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium - Google Patents
Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium Download PDFInfo
- Publication number
- WO2007111126A1 WO2007111126A1 PCT/JP2007/054975 JP2007054975W WO2007111126A1 WO 2007111126 A1 WO2007111126 A1 WO 2007111126A1 JP 2007054975 W JP2007054975 W JP 2007054975W WO 2007111126 A1 WO2007111126 A1 WO 2007111126A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- organic acid
- processing
- processed
- semiconductor device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 238000000034 method Methods 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000008569 process Effects 0.000 title description 10
- -1 organic acid amine salt Chemical class 0.000 claims abstract description 53
- 150000007524 organic acids Chemical class 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims description 138
- 239000010410 layer Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 238000003672 processing method Methods 0.000 claims description 35
- 239000011229 interlayer Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 230000018044 dehydration Effects 0.000 claims description 12
- 238000006297 dehydration reaction Methods 0.000 claims description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 150000001735 carboxylic acids Chemical class 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 71
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 24
- 239000002994 raw material Substances 0.000 description 17
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 16
- 238000006722 reduction reaction Methods 0.000 description 13
- 208000005156 Dehydration Diseases 0.000 description 11
- 230000009467 reduction Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 235000019253 formic acid Nutrition 0.000 description 8
- 125000001183 hydrocarbyl group Chemical group 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- ZMZINYUKVRMNTG-UHFFFAOYSA-N acetic acid;formic acid Chemical compound OC=O.CC(O)=O ZMZINYUKVRMNTG-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical class CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- SEACXNRNJAXIBM-UHFFFAOYSA-N triethyl(methyl)azanium Chemical compound CC[N+](C)(CC)CC SEACXNRNJAXIBM-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DZGWFCGJZKJUFP-UHFFFAOYSA-N tyramine Chemical class NCCC1=CC=C(O)C=C1 DZGWFCGJZKJUFP-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
Definitions
- Substrate processing method semiconductor device manufacturing method, substrate processing apparatus, and recording medium
- the present invention relates to a method for manufacturing a semiconductor device using metal wiring.
- the formic acid and acetic acid described above are highly corrosive to the metal materials used in the substrate processing apparatus. Therefore, there is a concern that the substrate to be processed may be contaminated with the metal when the substrate is processed. It was.
- piping for transporting processing gas and raw materials used in a substrate processing apparatus is mostly formed of a metal material such as a stainless alloy.
- a metal material such as a stainless alloy.
- formic acid and acetic acid are corrosive to such metal materials.
- the substrate processing apparatus is contaminated with metal, and therefore the substrate to be processed is contaminated with metal.
- Patent Document 1 Japanese Patent No. 3373499
- the present invention provides a novel and useful substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a recording medium storing the substrate processing method, which solve the above-described problems. For the purpose.
- a specific problem of the present invention is to reduce the influence of metal contamination when an oxide film formed on a metal wiring is removed in a semiconductor device manufacturing process.
- a substrate processing method for a substrate to be processed in which an insulating film and a metal layer are formed, wherein an organic acid ammonium salt is formed on the substrate to be processed A substrate processing method comprising: supplying a vapor of a substance containing at least one of an organic acid amine salt, an organic acid amide, and an organic acid hydrazide and heating the substrate to be processed.
- a semiconductor device manufacturing method including a metal wiring and an interlayer insulating film, wherein the metal wiring and the interlayer insulating film are formed.
- a vapor of a substance containing at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide is supplied onto the substrate to be processed and the substrate to be processed is heated.
- the above-described problem is solved by holding a substrate to be processed and heating the substrate to be processed, a processing container having the holding table therein, A substrate processing apparatus comprising a gas supply unit configured to supply a processing gas into a processing container, wherein the processing gas includes an organic acid ammonium salt, an organic acid amine salt, an organic acid amide, and an organic acid hydrazide.
- the processing gas includes an organic acid ammonium salt, an organic acid amine salt, an organic acid amide, and an organic acid hydrazide.
- the above-described problem is solved by holding a substrate to be processed and heating the substrate to be processed, a processing container having the holding table therein,
- a recording medium storing a program for operating a substrate processing method by a substrate processing apparatus provided with a gas supply unit for supplying a processing gas in a processing container by a computer, wherein the substrate processing method includes: On the treated substrate, organic acid ammonium salt, organic acid amine
- a recording medium comprising a processing step of supplying the processing gas containing a substance containing at least one of a salt, an organic acid amide, and an organic acid hydrazide and heating the substrate to be processed To solve.
- the present invention it is possible to reduce the influence of metal contamination when an oxide film formed on a metal layer is removed in a semiconductor device manufacturing process.
- FIG. 1 shows a substrate processing apparatus according to Embodiment 1.
- FIG. 2 is a view showing a substrate processing apparatus according to a second embodiment.
- FIG. 3A is a view (No. 1) showing a method for manufacturing a semiconductor device (substrate treatment method) according to Embodiment 3.
- FIG. 3B is a diagram (part 2) illustrating the semiconductor device manufacturing method (substrate processing method) according to Example 3.
- FIG. 3C is a diagram (part 3) illustrating the semiconductor device manufacturing method (substrate processing method) according to Example 3.
- FIG. 3D is a diagram (part 4) illustrating the semiconductor device manufacturing method (substrate processing method) according to Example 3.
- FIG. 3E is a diagram (part 5) illustrating the semiconductor device manufacturing method (substrate processing method) according to Example 3.
- a substrate processing method is a substrate processing method for a substrate to be processed, in which an insulating film and a metal layer are formed, wherein an organic acid ammonium salt, an organic acid amine salt, an organic acid salt is formed on the substrate to be processed It has a processing step of supplying a vapor (hereinafter sometimes referred to as a processing gas in the sentence) of a substance containing at least one of acid amide and organic acid hydrazide and heating the substrate to be processed. As les.
- At least one of the organic acid ammonium salt, the organic acid amine salt, the organic acid amide, and the organic acid hydrazide has a low corrosiveness to the metal material. It is characterized by the use of vapor of a substance containing one. For this reason, the influence of corroding piping made of a metal material for supplying a processing gas, a processing container of a substrate processing apparatus, etc. is suppressed, and substrate processing with reduced metal contamination is possible.
- the above-described processing gas has a feature that a metal (for example, Cu) oxide film can be stably removed as compared with formic acid and acetic acid conventionally used.
- a metal for example, Cu
- formic acid or acetic acid vapor both monomers and dimers are formed, and the ratio of these formations varies greatly due to slight differences in conditions, so the metal reduction reaction may become unstable. is there.
- the dehydration treatment of the insulating film (interlayer insulating film) formed around the metal wiring is performed. There is an effect that makes it possible to perform.
- the interlayer insulating film made of the above-mentioned low-k material often takes in moisture into the film, which may lead to a decrease in the insulating property of the interlayer insulating film and an increase in the dielectric constant. . Therefore, in the substrate processing method according to the present invention, by using the processing gas, it is possible to perform dehydration processing of the interlayer insulating film as well as metal reduction processing.
- Cu reduction treatment and interlayer insulation film dehydration treatment using the processing gas can be performed at a low temperature (300 ° C or less), and are susceptible to damage at high temperatures. It is suitable when applied to the formation of a semiconductor device using an interlayer insulating film made of k material.
- FIG. 1 is a diagram schematically showing an example of the configuration of a substrate processing apparatus according to Embodiment 1 of the present invention.
- a substrate processing apparatus 100 according to the present embodiment has a processing container 101 in which a processing space 101A is defined.
- a holding base 103 on which a heater 103A that holds the substrate W to be processed and heats the substrate W to be processed is installed.
- the heater 103A is connected to a power source 104, and is configured to be able to heat the substrate to be processed W to a desired temperature.
- the processing space 101A is evacuated from an exhaust line 105 connected to the processing container 101, and is maintained in a reduced pressure state.
- the exhaust line 105 is connected to an exhaust pump 106 via a pressure adjustment valve 105A, so that the processing space can be brought into a reduced pressure state of a desired pressure.
- a gas supply unit 102 having a shower head structure is installed on the side of the processing container 101 facing the holding table 103.
- a gas supply line 107 is connected to the gas supply unit 102. From the gas supply line 107, for example, at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide is used. Process gas consisting of vapors of one containing material is supplied.
- the processing gas supplied to the gas supply unit 102 is supplied to the processing space 101A through a plurality of gas holes 102A formed in the gas supply unit. Supply to the processing space 101A
- the processed gas reaches the substrate to be processed W heated to a predetermined temperature by the heater 103A, for example, removal of an oxide film of Cu wiring (Cu reduction) formed on the substrate to be processed W, Alternatively, the dehydration treatment of the insulating film (interlayer insulating film) formed on the substrate to be processed W is performed.
- the gas supply line 107 is provided with a valve 108, a mass flow controller (MFC) 109 force S, and at least one of an organic acid ammonium salt, an organic acid amine salt, an organic acid amide, and an organic acid hydrazide. In any case, it is connected to the raw material supply means 110 that holds the raw material 110a made of the substance including four powers.
- the raw material supply means 110 is provided with a heater 110A, and the raw material 110a is vaporized (or sublimated) by being heated by the heater 110A. The vaporized raw material 110a (processing gas) is supplied from the gas supply line 107 to the processing space 101A.
- the raw material 110a is vaporized or sublimated, or when the vaporized or sublimated raw material 110a (processing gas) is supplied to the processing space 101A, for example, Ar or N, or
- the raw material may be vaporized by a method using a vaporizer by so-called liquid injection.
- control means 100A The operation of the substrate processing apparatus 100 related to substrate processing is controlled by the control means 100A, and the control means 100A is controlled based on a program stored in the computer 100B. It has become. These wirings are not shown.
- the control means 100A includes a temperature control means 100a, a gas control means 100b, and a pressure control means 100c.
- the temperature control means 100 a controls the temperature of the holding table 103 by controlling the power source 104, and controls the temperature of the substrate W to be processed heated by the holding table 103.
- the gas control means 100b controls the opening and closing of the valve 108 and the flow rate control by the MFC 109, and controls the state of the processing gas supplied to the processing space 101A. Further, the pressure control means 100c controls the opening degree of the exhaust pump 106 and the pressure adjusting valve 105A so that the processing space 101A has a predetermined pressure.
- the control means 100A is controlled by a computer 100B, and The plate processing apparatus 100 is operated by the computer 100B.
- the computer 100B includes a CPU 100d, a recording medium 100e, an input unit 100f, a memory 100g, a communication unit 100h, and a display unit 100i.
- a program for a substrate processing method related to substrate processing is recorded on the recording medium 100e, and the substrate processing is performed based on the program.
- the program may be input from the communication unit 100h or may be input from the input unit 100f.
- FIG. 2 is a diagram schematically showing a substrate processing apparatus 100X according to Embodiment 2 of the present invention.
- the same reference numerals are given to the parts described above, and the description will be omitted. Further, parts not specifically described are the same as those of the substrate processing apparatus of the first embodiment.
- a substance containing at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide is used.
- water vapor (HO) is supplied.
- a gas mixing unit 102A connected to the gas supply unit 102 is installed, and further, water vapor (HO) is supplied from the water vapor generator 112 to the gas mixing unit 102A. It is configured as follows.
- water vapor is supplied from the gas supply line 111 to the reaction promotion chamber 102B installed outside the gas supply unit 102.
- the gas supply line 111 is connected to the reaction promoting chamber 102B together with the gas supply line 107 so that the processing gas and HO are supplied.
- the mixed process gas and H 2 O are passed through the gas supply unit 102.
- a heater 102b is installed outside the reaction promoting chamber 102B, and the mixed gas of the processing gas and H 2 O has a predetermined temperature (the predetermined temperature).
- the temperature may be higher than the temperature of the substrate to be processed).
- the gas supply line 111 is connected to a water vapor generator 112.
- the water steam generator 112 is supplied with O power from the gas line 113 and H from the gas line 117, and is steamed.
- the gas line 113 is provided with a valve 114 and an MFC 115, and O
- the gas line 117 includes a valve 118, MFC. 119 is installed and connected to the H supply 120.
- valves 114 and 118 are opened and closed, the MFCs 115 and 119 are controlled, and the water vapor generator 112 is further controlled to control the H 2 O supplied from the gas supply line 111.
- an insulating film is formed so as to cover an element (not shown) such as a MOS transistor formed on a semiconductor substrate made of silicon (the substrate W to be processed).
- a silicon oxide film 201 is formed.
- a wiring layer (not shown) made of, for example, W (tungsten) electrically connected to the element, and a wiring layer 202 made of, for example, Cu connected to the wiring layer are formed.
- a first insulating layer (interlayer insulating film) 203 is formed on the silicon oxide film 201 so as to cover the wiring layer 202.
- a groove portion 204a and a hole portion 204b are formed in the first insulating layer 203.
- a wiring portion 204 made of Cu and made of trench wiring and via wiring is formed, and this is electrically connected to the wiring layer 202 described above. .
- a Cu diffusion preventing film 204c is formed between the first insulating layer 203 and the wiring portion 204.
- the Cu diffusion prevention film 204c has a function of preventing Cu from diffusing from the wiring portion 204 to the first insulating layer 203.
- an insulating layer 205 (Cu diffusion preventing layer) and a second insulating layer (interlayer insulating film) 206 are formed so as to cover the wiring portion 204 and the first insulating layer 203.
- the wiring portion 204 can also be formed by a method similar to the method described below.
- a groove 207a and a hole 207b are formed in the second insulating layer 206 by, for example, a dry etching method or the like.
- a part of the wiring portion 204 made of Cu is exposed from the opening formed in the second insulating layer 206.
- An oxide film (not shown) is formed on the exposed surface layer of the wiring part 204.
- the substrate processing method described above is applied using the substrate processing apparatus 100 or the substrate processing apparatus 100X, and the oxide film of the exposed Cu wiring is removed.
- Cu reduction treatment a substance (processing gas) containing at least one of organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide vaporized or sublimated on the substrate to be processed is supplied.
- the substrate to be processed is heated to remove the Cu oxide film.
- the temperature of the substrate to be processed is higher than that in the case where the reduction process is performed using H or NH.
- the temperature can be lowered, for example, treatment at 300 ° C. or lower is possible.
- the substrate can be processed at a low temperature of 300 ° C. or lower as in this embodiment. This is particularly preferable.
- the temperature of the substrate to be processed is too low, the reduction reaction is not sufficiently promoted, so that the temperature is preferably 100 ° C or higher. That is, the temperature of the substrate to be processed is preferably 100 ° C. to 300 ° C.
- this step it is possible to perform a Cu reduction process and a dehydration process of the interlayer insulating film.
- the processing gas is supplied to the second insulating layer 206 and heated, so that the dehydration process of the second insulating layer 206 is promoted, and the electric power of the second insulating layer 206 is increased. Effects such as reduction of dielectric constant and improvement of withstand voltage are obtained.
- the effect of improving the electrical characteristics by such dehydration can be obtained, for example, even when the second insulating layer 206 is a silicon oxide film (SiO film).
- Layer 206 is a silicon oxide film (SiO film).
- low dielectric constant material low dielectric constant interlayer insulating film
- a porous film or a hook There is a film containing element.
- the substrate processing apparatus 100X is used to supply H 2 O onto the substrate to be processed in this step.
- the amount of H 2 O supplied should be increased in consideration of the stability of the reduction treatment.
- the organic acid constituting the organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide is, for example, one made of carboxylic acid. be able to.
- the processing gas used in this example is an organic acid ammonium salt or an organic acid amine salt.
- Rl_COO_NR2R3R4R5 A functional group in which at least a part of the hydrogen atoms constituting the group or hydrocarbon group are substituted with halogen atoms.
- the hydrocarbon group include an alkyl group, an alkenyl group, an alkynyl group, and an aryl group.
- Specific halogen atoms can include fluorine, chlorine, bromine and iodine.
- organic acid ammonium salt and organic acid amine salt examples include organic acid ammonium salt (R 1COONH), organic acid methylamine salt, organic acid ethylamine salt, organic acid tube.
- Primary amine salts such as tyramine salts, or secondary amine salts such as organic acid dimethylamine salts, organic acid ethylmethylamine salts, organic acid jetylamine salts, organic acid trimethylamine salts, organic acid jetylmethylamine salts, organic There are tertiary amine salts such as ethyldimethylamine salt and organic acid trimethylamine salt, or quaternary ammonium salts such as organic acid tetramethylammonium and organic acid triethylmethylammonium.
- the organic acid amide that is a processing gas used in this example is R6 -CO-NH2 (R6 is a hydrogen atom, a hydrocarbon group, or a hydrogen atom constituting a hydrocarbon group. A functional group in which a part is substituted with a halogen atom.)
- Specific hydrocarbon groups include alkyl groups, alkenyl groups, alkynyl groups, aryl groups, and the like.
- Specific halogen atoms include fluorine, chlorine, bromine and iodine.
- Ability to do S for example, as an example of organic acid amide, carboxylic acid amide (RCONH) is
- the organic acid hydrazide which is a processing gas used in this example, is R7-CO-NH0NH2 (R7 is at least one of hydrogen atoms constituting a hydrogen atom, a hydrocarbon group, or a hydrocarbon group. A functional group in which a part is substituted with a halogen atom.)
- Specific hydrocarbon groups include alkyl groups, alkenyl groups, alkynyl groups, aryl groups, and the like.
- Specific examples of the halogen atom include fluorine, chlorine, bromine and iodine.
- Examples of the organic acid include carboxylic acids such as acetic acid, formic acid, propionic acid, butyric acid, acetic acid formic acid, and valeric acid.
- carboxylic acids such as acetic acid, formic acid, propionic acid, butyric acid, acetic acid formic acid, and valeric acid.
- the flow rate of the processing gas is 1 to 1000 sccm
- the pressure of the processing space 101A is 1 to lOOOPa
- the temperature of the substrate to be processed is 100 to 300 ° C.
- the processing time is The above processing can be performed for 1 to 180 seconds.
- the flow rate of water vapor is preferably 1 to lOOOOsccm.
- the temperature of the reaction promoting chamber 102B is preferably higher than the temperature of the substrate to be processed.
- a Cu diffusion preventing film 207c is formed on the second insulating layer 206 including the inner wall surfaces of the groove portion 207a and the hole portion 207b and on the exposed surface of the wiring portion 204.
- the film is formed.
- the Cu diffusion preventing film 207c is, for example, a refractory metal film, a nitride film thereof, or a laminated film force of the refractory metal film and the nitride film.
- the Cu diffusion prevention film 207c is made of a Ta / TaN film, a WN film, or a TiN film, and can be formed by a method such as sputtering or CVD.
- Such a Cu diffusion barrier film can also be formed by the so-called ALD method.
- a wiring portion 207 made of Cu is formed on the Cu diffusion preventing film 207c including the groove portion 207a and the hole portion 207b.
- the wiring portion 207 can be formed by electric field measurement of Cu. Further, the wiring portion 207 may be formed by a CVD method or an ALD method.
- the substrate surface is planarized by a chemical mechanical polishing (CMP) method.
- CMP chemical mechanical polishing
- a 2 + n insulating layer (n is a natural number) is further formed on the second insulating layer, and a wiring made of Cu is formed on each insulating layer by the above method. It is possible to form a semiconductor device having a multilayer wiring structure.
- the Cu wiring is mainly described as an example of the metal wiring formed in the insulating layer.
- the present invention is not limited to this.
- this embodiment can also be applied to metals (wirings) such as Ag, W, Co, Ru, Ti, Ta, etc. in addition to Cu.
- FIG. 4 shows a substrate processing apparatus 100Y that is a modification of the substrate processing apparatus 100 described in the first embodiment.
- the same reference numerals are given to the parts described above, and the description is omitted.
- a raw material supply means 310 is installed in place of the raw material supply means 110 installed in the substrate processing apparatus 100.
- the raw material supply means 310 is configured to vaporize or sublimate the raw material 110a by a so-called publishing method and supply it to the processing space 101A from the gas supply line 107.
- the raw material supply means 310 is supplied with an inert gas (for example, He) as a carrier gas from a gas line 311, and the vaporized or sublimated raw material is supplied to the processing vessel together with the carrier gas.
- an inert gas for example, He
- the removal of the oxide film formed on Cu can be stably and efficiently performed while reducing the influence of metal contamination.
- the interlayer insulating film can be dehydrated.
- the above-described method makes it possible to perform Cu oxide film removal and dehydration treatment of the interlayer insulating layer, which were conventionally performed in separate steps, at substantially the same time, thereby simplifying the semiconductor device manufacturing process. It has become.
- the removal of the oxide film of the metal layer and the dehydration treatment of the interlayer insulating layer are performed simultaneously.
- the force explaining the example performed in the present invention is not limited to this.
- the organic acid ammonium salt, organic acid amine salt, organic acid amide, and organic acid hydrazide described in the above-mentioned examples can be used as the processing gas.
- the substrate processing method and the substrate processing apparatus can be similarly performed using the same method and apparatus as those described in the above embodiments.
- the substrate processing method of the present invention is applied to the step of removing the Cu surface oxide film of the lower layer wiring exposed in the opening formed by etching the insulating layer.
- the present invention may be applied to the case where the Cu surface oxide film is removed in another process.
- the present invention may be applied to a seed layer or a wiring layer after it is formed or after CMP.
- the present invention it is possible to reduce the influence of metal contamination when an oxide film formed on a metal wiring is removed in a semiconductor device manufacturing process.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800111178A CN101410954B (en) | 2006-03-27 | 2007-03-13 | Method of substrate treatment, process for producing semiconductor device |
JP2008507419A JPWO2007111126A1 (en) | 2006-03-27 | 2007-03-13 | Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and recording medium |
US12/282,963 US20090087995A1 (en) | 2006-03-27 | 2007-03-13 | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-086565 | 2006-03-27 | ||
JP2006086565 | 2006-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2007111126A1 true WO2007111126A1 (en) | 2007-10-04 |
Family
ID=38541047
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/054975 WO2007111126A1 (en) | 2006-03-27 | 2007-03-13 | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090087995A1 (en) |
JP (1) | JPWO2007111126A1 (en) |
KR (1) | KR101020452B1 (en) |
CN (1) | CN101410954B (en) |
WO (1) | WO2007111126A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204669A (en) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | Processing method and storage medium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100867A (en) * | 2001-09-26 | 2003-04-04 | Fujitsu Ltd | Method for manufacturing semiconductor device and cleaning liquid therefor |
JP2003243502A (en) * | 2002-02-18 | 2003-08-29 | Ulvac Japan Ltd | Metal connecting apparatus using organic acid |
JP2005072384A (en) * | 2003-08-26 | 2005-03-17 | Matsushita Electric Ind Co Ltd | Method for manufacturing electronic device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6423200B1 (en) * | 1999-09-30 | 2002-07-23 | Lam Research Corporation | Copper interconnect seed layer treatment methods and apparatuses for treating the same |
US6852242B2 (en) * | 2001-02-23 | 2005-02-08 | Zhi-Wen Sun | Cleaning of multicompositional etchant residues |
JP4209212B2 (en) * | 2003-01-30 | 2009-01-14 | Necエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
JP2005347587A (en) * | 2004-06-04 | 2005-12-15 | Sony Corp | Cleaning liquid composition after dry etching, and manufacturing method of semiconductor device |
-
2007
- 2007-03-13 WO PCT/JP2007/054975 patent/WO2007111126A1/en active Application Filing
- 2007-03-13 US US12/282,963 patent/US20090087995A1/en not_active Abandoned
- 2007-03-13 JP JP2008507419A patent/JPWO2007111126A1/en active Pending
- 2007-03-13 CN CN2007800111178A patent/CN101410954B/en not_active Expired - Fee Related
- 2007-03-13 KR KR1020087023367A patent/KR101020452B1/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100867A (en) * | 2001-09-26 | 2003-04-04 | Fujitsu Ltd | Method for manufacturing semiconductor device and cleaning liquid therefor |
JP2003243502A (en) * | 2002-02-18 | 2003-08-29 | Ulvac Japan Ltd | Metal connecting apparatus using organic acid |
JP2005072384A (en) * | 2003-08-26 | 2005-03-17 | Matsushita Electric Ind Co Ltd | Method for manufacturing electronic device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204669A (en) * | 2011-03-25 | 2012-10-22 | Tokyo Electron Ltd | Processing method and storage medium |
Also Published As
Publication number | Publication date |
---|---|
KR101020452B1 (en) | 2011-03-08 |
JPWO2007111126A1 (en) | 2009-08-13 |
CN101410954A (en) | 2009-04-15 |
CN101410954B (en) | 2010-06-02 |
KR20080104156A (en) | 2008-12-01 |
US20090087995A1 (en) | 2009-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI772634B (en) | Method to fabricate thermally stable low k-finfet spacer | |
US6218301B1 (en) | Deposition of tungsten films from W(CO)6 | |
JP6222880B2 (en) | Semiconductor device manufacturing method, substrate processing apparatus, semiconductor device, and program | |
US7514358B2 (en) | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | |
TW202117931A (en) | Gap fill deposition process | |
TW201207939A (en) | Method of improving oxide growth rate of selective oxidation processes | |
US6472333B2 (en) | Silicon carbide cap layers for low dielectric constant silicon oxide layers | |
JP6164775B2 (en) | Semiconductor device manufacturing method, substrate processing apparatus, and program | |
JP2007294879A (en) | Substrate treatment method, semiconductor device fabrication method, and substrate treatment unit | |
WO2007111126A1 (en) | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium | |
WO2007111127A1 (en) | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium | |
WO2022080153A1 (en) | Substrate processing method and substrate processing apparatus | |
WO2022066419A1 (en) | Nitride capping of titanium material to improve barrier properties | |
JP2010192738A (en) | METHOD OF FORMING Cu FILM, AND STORAGE MEDIUM | |
JP2020152976A (en) | Film deposition method and film deposition apparatus | |
JP5384165B2 (en) | Substrate processing method | |
JP4787073B2 (en) | Processing method and processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07738447 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008507419 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12282963 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020087023367 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200780011117.8 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07738447 Country of ref document: EP Kind code of ref document: A1 |