WO2007033045A3 - Stacked mosfets - Google Patents

Stacked mosfets Download PDF

Info

Publication number
WO2007033045A3
WO2007033045A3 PCT/US2006/035227 US2006035227W WO2007033045A3 WO 2007033045 A3 WO2007033045 A3 WO 2007033045A3 US 2006035227 W US2006035227 W US 2006035227W WO 2007033045 A3 WO2007033045 A3 WO 2007033045A3
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
stacked
mosfet
stacked mosfets
mosfets
Prior art date
Application number
PCT/US2006/035227
Other languages
French (fr)
Other versions
WO2007033045A2 (en
Inventor
Erik J Mentze
Herbert L Hess
Jennifer E Phillips
Original Assignee
Idaho Res Found
Erik J Mentze
Herbert L Hess
Jennifer E Phillips
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idaho Res Found, Erik J Mentze, Herbert L Hess, Jennifer E Phillips filed Critical Idaho Res Found
Publication of WO2007033045A2 publication Critical patent/WO2007033045A2/en
Publication of WO2007033045A3 publication Critical patent/WO2007033045A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

A stacked MOSFET includes a first transistor or MOSFET (202) connected to a bias voltage through bias resistor Rbias.The gate of transistor (202) is grounded through a capacitor (206) The output of the stacked MOSFET arrangement is taken across a plurality of resistors R. An input transistor (204) is connected as shown to receive an input signal Vin.
PCT/US2006/035227 2005-09-12 2006-09-08 Stacked mosfets WO2007033045A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71632205P 2005-09-12 2005-09-12
US60/716,322 2005-09-12

Publications (2)

Publication Number Publication Date
WO2007033045A2 WO2007033045A2 (en) 2007-03-22
WO2007033045A3 true WO2007033045A3 (en) 2009-06-04

Family

ID=37865469

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/035227 WO2007033045A2 (en) 2005-09-12 2006-09-08 Stacked mosfets

Country Status (1)

Country Link
WO (1) WO2007033045A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
EP1774620B1 (en) 2004-06-23 2014-10-01 Peregrine Semiconductor Corporation Integrated rf front end
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
JP5417346B2 (en) 2008-02-28 2014-02-12 ペレグリン セミコンダクター コーポレーション Method and apparatus for use in digitally tuning a capacitor in an integrated circuit element
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821800A (en) * 1997-02-11 1998-10-13 Advanced Micro Devices, Inc. High-voltage CMOS level shifter
US6801064B1 (en) * 2002-08-27 2004-10-05 Cypress Semiconductor, Corp Buffer circuit using low voltage transistors and level shifters

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821800A (en) * 1997-02-11 1998-10-13 Advanced Micro Devices, Inc. High-voltage CMOS level shifter
US6801064B1 (en) * 2002-08-27 2004-10-05 Cypress Semiconductor, Corp Buffer circuit using low voltage transistors and level shifters

Also Published As

Publication number Publication date
WO2007033045A2 (en) 2007-03-22

Similar Documents

Publication Publication Date Title
WO2007033045A3 (en) Stacked mosfets
WO2006107572A3 (en) Apparatus for current sensing
TWI268600B (en) Thin film circuit substrate, piezoelectric speaker device, display device, and sound-generating display device
WO2010041212A3 (en) Bus driver circuit
ATE404976T1 (en) SLIDE REGISTER CIRCUIT WITH TWO BOOTSTRAP CAPACITORS
CA2376410A1 (en) Cascode distributed amplifier
EP1742506A3 (en) Microphone assembly with P-type preamplifier input stage
WO2008078443A1 (en) Switch circuit, variable capacitor circuit and ic thereof
TW200518443A (en) Amplifier
ATE460772T1 (en) ANALOG MULTIPLIER
DE60315631D1 (en) OPERATIONAL AMPLIFIER WITH ENLARGED EFFECTIVE SIGNAL INPUT SIGNAL
WO2007002944A3 (en) Temperature-independent amplifier offset trim circuit
WO2005101538A3 (en) Transconductance circuit for piezoelectric transducer
WO2009001872A1 (en) Signal conversion circuit and rail-to-rail circuit
EP1881692A3 (en) Methods for reading a pixel and for writing to a pixel and a device having pixel reading capabilities and pixel writing capabalities
JP3805543B2 (en) Semiconductor integrated circuit
EP1032123A3 (en) Signal amplifying circuit
WO2007107933A3 (en) A light emitting device
RU2008122881A (en) PASSIVE COMPONENTS WITH VARIABLE HIGH RESOLUTION, VALUE SELECTION AND MANAGEMENT
TW200520485A (en) Precise slew rate control line driver
WO2007073930A3 (en) Circuit arrangement featuring explosion protection
WO2008112828A3 (en) Switched capacitor notch filter circuits
JP4674299B2 (en) Inverting amplifier and crystal oscillator having the same
WO2007047166A3 (en) Output driver circuit with multiple gate devices
WO2008105257A1 (en) High-frequency circuit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06814416

Country of ref document: EP

Kind code of ref document: A2