WO2007032222A1 - Catalyseur pour dépôt autocatalytique destiné à un tableau de connexions imprimé comportant un alésage traversant, et un tel tableau traité en utilisant un tel catalyseur - Google Patents
Catalyseur pour dépôt autocatalytique destiné à un tableau de connexions imprimé comportant un alésage traversant, et un tel tableau traité en utilisant un tel catalyseur Download PDFInfo
- Publication number
- WO2007032222A1 WO2007032222A1 PCT/JP2006/317461 JP2006317461W WO2007032222A1 WO 2007032222 A1 WO2007032222 A1 WO 2007032222A1 JP 2006317461 W JP2006317461 W JP 2006317461W WO 2007032222 A1 WO2007032222 A1 WO 2007032222A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compound
- hole
- catalyst
- printed wiring
- electroless plating
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/12—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing organo-metallic compounds or metal hydrides
- B01J31/123—Organometallic polymers, e.g. comprising C-Si bonds in the main chain or in subunits grafted to the main chain
- B01J31/124—Silicones or siloxanes or comprising such units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
- B01J31/18—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms
- B01J31/1805—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes containing nitrogen, phosphorus, arsenic or antimony as complexing atoms, e.g. in pyridine ligands, or in resonance therewith, e.g. in isocyanide ligands C=N-R or as complexed central atoms the ligands containing nitrogen
- B01J31/181—Cyclic ligands, including e.g. non-condensed polycyclic ligands, comprising at least one complexing nitrogen atom as ring member, e.g. pyridine
- B01J31/1815—Cyclic ligands, including e.g. non-condensed polycyclic ligands, comprising at least one complexing nitrogen atom as ring member, e.g. pyridine with more than one complexing nitrogen atom, e.g. bipyridyl, 2-aminopyridine
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/422—Plated through-holes or plated via connections characterised by electroless plating method; pretreatment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
- B01J2531/80—Complexes comprising metals of Group VIII as the central metal
- B01J2531/82—Metals of the platinum group
- B01J2531/824—Palladium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0716—Metallic plating catalysts, e.g. for direct electroplating of through holes; Sensitising or activating metallic plating catalysts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Definitions
- the present invention relates to an electroless plating catalyst used for a printed wiring board having a through hole, and a printed wiring board having a through hole processed using the catalyst.
- an electroless plating such as copper or nickel
- the electroless plating is formed in order to form the base layer uniformly on the base material.
- a pretreatment method in which a catalyst such as palladium is applied to the surface of a base material before application.
- a method of immersing a substrate in a Sn Pd colloid solution, a method of attaching a catalyst by vapor deposition or sputtering, and the like are used.
- pretreatment is performed in the same manner, and a metal layer is formed by electroless plating (Patent Document 1, Patent). (Ref. 2).
- the Sn-Pd colloid As a method of applying a catalyst, in the method of immersing a substrate in the above Sn-Pd colloid solution, the Sn-Pd colloid is large in a printed wiring board having a through hole having a diameter of 200 m or less ( Particle size 0.1 ⁇ : LO m) On the side wall of one hole, the catalyst is liable to generate voids. In addition, the plating process using Sn—Pd colloid prevents the generation of voids by performing a plurality of catalyst application steps + plating steps, which makes the process complicated and costly. In addition, in the case of vapor deposition sputtering, it is difficult to apply a catalyst uniformly to the side wall of the through hole.
- Patent Document 1 Japanese Patent Laid-Open No. 2005-136316
- Patent Document 2 U.S. Patent 6,630,743 B2 Specification
- An object of the present invention is to provide an electroless plating catalyst capable of being attached. Means for solving the problem
- the present inventors have used a catalyst containing a compound having a functional group capable of capturing a noble metal in the molecule and a noble metal compound as a catalyst for the substrate. We found that by attaching and electroless plating, even on printed wiring boards with through-holes with a diameter of 200 m or less, they are evenly attached to the side walls of the through-holes.
- the present invention is as follows.
- a catalyst for electroless plating used for a printed wiring board having a through hole comprising a compound having a functional group capable of capturing a noble metal in the molecule and a noble metal compound. Catalyst.
- the compound having a functional group capable of capturing a noble metal in the molecule is a silane coupling agent, and is obtained by a reaction of an azole or amine compound with an epoxy silane compound.
- the electroless plating catalyst according to (1) is a silane coupling agent, and is obtained by a reaction of an azole or amine compound with an epoxy silane compound.
- the noble metal compound is a palladium compound V, catalyst for electroless plating according to any one of the above.
- a diameter of 200 m or less characterized by being electrolessly plated after being treated with the electroless plating catalyst according to any one of (1) to (4) above.
- Printed wiring board with fine through holes Printed wiring board with fine through holes.
- a printed circuit board having a through hole that has been electrolessly plated after being treated with the electroless plating catalyst of the present invention has a through hole even if the through hole has a diameter of 200 ⁇ m or less.
- the side walls are uniformly plated and no voids are generated. Therefore, the process can be simplified and the yield can be improved.
- FIG. 1 is a photograph of the inside of a through hole after electroless plating in Example 1.
- FIG. 2 is a photograph of the inside of a through hole after electroless plating in Comparative Example 1.
- the present invention is an electroless plating catalyst used for a printed wiring board having a through-hole, and includes a compound having a functional group capable of capturing a noble metal in a molecule and a noble metal compound.
- the noble metal catalyst is formed via a compound having a functional group capable of capturing the noble metal in the molecule with respect to the surface to be bonded. It can fix more uniformly and reliably.
- the catalyst since the catalyst has a small molecular size, it can easily go into the small-diameter through-hole, and can be firmly and evenly fixed on the side wall of the through-hole. For this reason, when electroless plating is applied after the catalyst is deposited, uniform plating can be achieved without generating voids.
- a preferable compound having a functional group capable of capturing a noble metal in the molecule is a silane coupling agent, which is obtained by reacting an azole compound or an amine compound with an epoxy compound. Can be mentioned.
- azole compounds include imidazole, oxazole, thiazole, selenazole, pyrazole, isoxazole, isothiazole, triazole, oxadiazole, thiadiazole, tetrazole, oxatriazole, thiatriazole, bendazol. And indazole, benzimidazole, benzotriazole and the like. Although not limited to these, imidazole is particularly preferred.
- amine compound examples include saturated hydrocarbon amines such as propylamine, unsaturated hydrocarbon amines such as berylamine, and aromatic amines such as phenylamine.
- the silane coupling agent is a compound having a -SIX X X group in addition to the noble metal capturing group derived from the azole compound or the amine compound, and X, X, and X are alkyl.
- X, X, and X may be the same or different.
- the silane coupling agent can be obtained by reacting the azole compound or amine compound with an epoxy silane compound.
- reaction of the azole compound and the epoxy group-containing silane compound can be carried out under the conditions described in, for example, JP-A-6-256358.
- an epoxy group-containing silane compound for example, it can be obtained by dropping 0.1 to 10 moles of an epoxy group-containing silane compound at 80 to 200 ° C and reacting for 5 minutes to 2 hours with respect to 1 mole of an azole compound.
- an organic solvent such as force form, dioxane, methanol, ethanol or the like, which does not particularly require a solvent, may be used.
- R 2 is hydrogen or an alkyl group having 1 to 3 carbon atoms
- R 3 is hydrogen or an alkyl group having 1 to 20 carbon atoms
- R 4 is a bur group, or an alkyl group having 1 to 5 carbon atoms
- n is 0 to 3 is shown.
- Other examples of the compound having a functional group capable of capturing a noble metal in the molecule used in the present invention include, for example, a silane coupling agent having an amino group, a mercapto group, etc. as a functional group capable of capturing a noble metal.
- Examples include silane and ⁇ -mercaptoprovir trimethoxysilane.
- the noble metal compound examples include noble metal compounds such as palladium, silver, platinum, and gold, such as halides, hydroxides, sulfates, carbonates, carboxylic acids, sulfonic acids, and sulfinic acids.
- a salt with an organic acid, a precious metal sarcophagus, etc. can be mentioned.
- Particularly preferred is a palladium compound.
- the palladium compound is not particularly limited as long as palladium ions are supplied, but halides, sulfates, carboxylates and the like are preferably used.
- a conventional catalyst such as tin chloride can be contained within the scope of the object of the present invention.
- the catalyst of the present invention is used as a solution of a compound having a functional group capable of trapping a noble metal in the molecule or a noble metal compound, but the solvent is capable of trapping the noble metal in the molecule.
- An aqueous solution that has the ability to dissolve the compound having a functional group or a noble metal compound and has a safety point is preferable.
- alcohol-based organic solvents such as methanol, ethanol, isopropanol and octyl alcohol, and aromatic organic solvents such as toluene and xylene may be used as appropriate.
- the concentration of the compound having a functional group capable of capturing a noble metal in the molecule in the catalyst is not limited to this, but is preferably 0.001 to 10% by weight.
- the amount is less than 001% by weight, the amount of the compound adhering to the surface of the substrate becomes low and it is difficult to obtain the effect immediately.
- it exceeds 10% by weight it is difficult to dry due to too much adhesion, or the balance with the trapped noble metal is lost and it takes time to develop the catalytic activity, and the effect is obtained.
- the noble metal compound can be used in the catalyst at a concentration of 1 to: LOOOmgZL (in terms of noble metal), preferably 10 to 300 mgZL (in terms of noble metal). Although the effect is seen outside this range, the influence of post-treatment is also preferably within the above range.
- dipping is preferable so that the substrate is uniformly applied to the side wall of the through hole.
- a printed wiring board having a through hole of the present invention for example, after forming a through hole in a base material, a regular degreasing process and a soft etching process are performed, and then the catalyst described so far is applied by immersion, An electroless plating layer such as copper or nickel is formed by a conventional method. After applying the catalyst, it is preferable to wash with water and activate the catalyst with, for example, 10% sulfuric acid, 5% sodium hypophosphite and the like at room temperature of 70 ° C for 1 minute at 15 minutes.
- the wiring board having a through hole according to the present invention has a printed wiring board uniformly plated with no voids even on the side wall of a through hole having a diameter of 200 ⁇ m or less, for example, a diameter of 150 m. Become.
- a printed circuit board multilayer substrate with a 150 m diameter through hole It was immersed for 5 minutes at 40 ° C. in an aqueous solution containing 100 mg ZL of silane (the reaction product of imidazole and 3-glycidoxypropyltrimethoxysilane) and 50 mg ZL of palladium chloride (30 mg ZL in terms of Pd). This was treated with an activator (5% sodium diphosphite) at 40 ° C for 5 minutes to make Pd electroless plating activity.
- Electroless copper plating (Cuposit 328, manufactured by R & H) was performed at room temperature for 20 minutes to form a copper layer with a thickness of 0.5 m. When the inside of the 1000-hole through hole was observed, it was found that all were attached (see Fig. 1).
- a laminated board for printed wiring boards having a 150 m diameter through hole is placed in an aqueous solution containing aminosilane ( ⁇ -aminopropyltriethoxysilane) lOOmgZL and palladium acetate lOOmgZL (47 mgZL in terms of Pd) at 40 ° C for 5 minutes. Soaked. This was treated with an activator (5% sodium diphosphite) at 40 ° C for 5 minutes to make Pd electroless plating activity. Electroless copper plating (Cuposite 328, manufactured by R & H) was performed at room temperature for 20 minutes to form a 0.5 ⁇ m thick copper layer. When the inside of the 1000-hole through hole was observed, it was found that all were attached.
- aminosilane ⁇ -aminopropyltriethoxysilane
- palladium acetate lOOmgZL 47 mgZL in terms of Pd
- a laminated board for printed wiring boards having a 150 m diameter through hole is immersed in a commercially available Sn—Pd colloid process (as a pre-dip solution, Kata Lip 404 (manufactured by R & H)). And then washed with water and treated once with AXELATOR 19E (manufactured by R & H) as an activator solution to make it electroactive. Thereafter, electroless copper plating was performed in the same manner as in Example 1. When the inside of the 1000-hole through hole was observed, voids were seen in 100 holes.
- Figure 2 shows a cross-sectional view of the through hole where voids were observed. The part that appears black in the through hole (dark part) is the non-stick part (void).
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Catalysts (AREA)
Abstract
La présente invention concerne un catalyseur pour dépôt autocatalytique, par lequel un dépôt autocatalytique uniforme peut être réalisé sans générer de vides sur une paroi latérale d'un alésage traversant, même sur un tableau de connexions imprimé comportant un alésage traversant d'un diamètre de 200 µm ou moins en raison d'une intégration élevée dudit tableau. Ledit catalyseur devant être utilisé pour des tableaux de connexions imprimés comportant des trous traversants est caractérisé en ce que le catalyseur comprend un composé comportant un groupe fonctionnel qui peut capturer un métal noble dans une molécule et un composé métallique noble.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007535424A JP4889045B2 (ja) | 2005-09-15 | 2006-09-04 | スルーホールを有するプリント配線基板への無電解めっき用触媒、及びその触媒を用いて処理されたスルーホールを有するプリント配線基板 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005268167 | 2005-09-15 | ||
JP2005-268167 | 2005-09-15 |
Publications (1)
Publication Number | Publication Date |
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WO2007032222A1 true WO2007032222A1 (fr) | 2007-03-22 |
Family
ID=37864821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2006/317461 WO2007032222A1 (fr) | 2005-09-15 | 2006-09-04 | Catalyseur pour dépôt autocatalytique destiné à un tableau de connexions imprimé comportant un alésage traversant, et un tel tableau traité en utilisant un tel catalyseur |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP4889045B2 (fr) |
KR (1) | KR100970067B1 (fr) |
TW (1) | TWI331173B (fr) |
WO (1) | WO2007032222A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010029635A1 (ja) * | 2008-09-11 | 2012-02-02 | パイオニア株式会社 | 金属配線の形成方法、及び金属配線を備えた電子部品 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11189880A (ja) * | 1997-10-21 | 1999-07-13 | Nippon Techno Kk | めっき方法 |
JPH11204943A (ja) * | 1998-01-08 | 1999-07-30 | Hitachi Ltd | 電子回路基板およびその製造方法 |
JP2000212754A (ja) * | 1999-01-22 | 2000-08-02 | Sony Corp | めっき方法及びその装置、並びにめっき構造 |
JP2001073157A (ja) * | 1999-09-08 | 2001-03-21 | Sony Corp | 無電解めっき方法及びその装置 |
WO2001081652A1 (fr) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Agent de pretraitement pour revetement metallique |
JP2005213576A (ja) * | 2004-01-29 | 2005-08-11 | Nikko Materials Co Ltd | 無電解めっき前処理剤、それを用いる無電解めっき方法、及び無電解めっき物 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2513270B2 (ja) * | 1988-05-06 | 1996-07-03 | 日立化成工業株式会社 | 無電解めっき用触媒溶液 |
JP3670238B2 (ja) * | 2000-01-07 | 2005-07-13 | 株式会社日鉱マテリアルズ | 金属めっき方法、前処理剤、それを用いた半導体ウェハー及び半導体装置 |
-
2006
- 2006-09-04 KR KR1020087007404A patent/KR100970067B1/ko active IP Right Grant
- 2006-09-04 JP JP2007535424A patent/JP4889045B2/ja active Active
- 2006-09-04 WO PCT/JP2006/317461 patent/WO2007032222A1/fr active Application Filing
- 2006-09-11 TW TW095133433A patent/TWI331173B/zh active
-
2010
- 2010-12-20 JP JP2010282574A patent/JP2011091427A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11189880A (ja) * | 1997-10-21 | 1999-07-13 | Nippon Techno Kk | めっき方法 |
JPH11204943A (ja) * | 1998-01-08 | 1999-07-30 | Hitachi Ltd | 電子回路基板およびその製造方法 |
JP2000212754A (ja) * | 1999-01-22 | 2000-08-02 | Sony Corp | めっき方法及びその装置、並びにめっき構造 |
JP2001073157A (ja) * | 1999-09-08 | 2001-03-21 | Sony Corp | 無電解めっき方法及びその装置 |
WO2001081652A1 (fr) * | 2000-04-25 | 2001-11-01 | Nikko Materials Co., Ltd. | Agent de pretraitement pour revetement metallique |
JP2005213576A (ja) * | 2004-01-29 | 2005-08-11 | Nikko Materials Co Ltd | 無電解めっき前処理剤、それを用いる無電解めっき方法、及び無電解めっき物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2010029635A1 (ja) * | 2008-09-11 | 2012-02-02 | パイオニア株式会社 | 金属配線の形成方法、及び金属配線を備えた電子部品 |
Also Published As
Publication number | Publication date |
---|---|
TWI331173B (en) | 2010-10-01 |
KR100970067B1 (ko) | 2010-07-16 |
TW200714745A (en) | 2007-04-16 |
JPWO2007032222A1 (ja) | 2009-03-19 |
KR20080048043A (ko) | 2008-05-30 |
JP4889045B2 (ja) | 2012-02-29 |
JP2011091427A (ja) | 2011-05-06 |
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