WO2007004595A3 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
WO2007004595A3
WO2007004595A3 PCT/JP2006/313167 JP2006313167W WO2007004595A3 WO 2007004595 A3 WO2007004595 A3 WO 2007004595A3 JP 2006313167 W JP2006313167 W JP 2006313167W WO 2007004595 A3 WO2007004595 A3 WO 2007004595A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
semiconductor
insulating film
gate insulating
semiconductor device
Prior art date
Application number
PCT/JP2006/313167
Other languages
French (fr)
Other versions
WO2007004595A2 (en
Inventor
Yoshio Shimoida
Hideaki Tanaka
Tetsuya Hayashi
Masakatsu Hoshi
Shigeharu Yamagami
Noriaki Kawamoto
Takayuki Kitou
Mineo Miura
Takashi Nakamura
Original Assignee
Nissan Motor
Rohm Co Ltd
Yoshio Shimoida
Hideaki Tanaka
Tetsuya Hayashi
Masakatsu Hoshi
Shigeharu Yamagami
Noriaki Kawamoto
Takayuki Kitou
Mineo Miura
Takashi Nakamura
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor, Rohm Co Ltd, Yoshio Shimoida, Hideaki Tanaka, Tetsuya Hayashi, Masakatsu Hoshi, Shigeharu Yamagami, Noriaki Kawamoto, Takayuki Kitou, Mineo Miura, Takashi Nakamura filed Critical Nissan Motor
Priority to US11/988,305 priority Critical patent/US9048103B2/en
Priority to EP06767745.0A priority patent/EP1908118B1/en
Priority to CN2006800245125A priority patent/CN101218681B/en
Publication of WO2007004595A2 publication Critical patent/WO2007004595A2/en
Publication of WO2007004595A3 publication Critical patent/WO2007004595A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method for producing a semiconductor device (20) is disclosed. The semiconductor device (20) includes: 1) a semiconductor substrate (1, 2) , 2) a hetero semiconductor area (3) configured to contact a first main face (2A) of the semiconductor substrate (1, 2) and different from the semiconductor substrate (1, 2) in band gap, 3) a gate electrode (7) contacting, via a gate insulating film (6) , a part of a junction part (13) between the hetero semiconductor area (3) and the semiconductor substrate (1, 2) , 4) a source electrode (8) configured to connect to the hetero semiconductor area (3) , and 5) a drain electrode (9) configured to make an ohmic connection with the semiconductor substrate (1, 2) . The method includes the following sequential operations: i) forming the gate insulating film (6) ; and ii) nitriding the gate insulating film (6) .
PCT/JP2006/313167 2005-07-05 2006-06-26 Semiconductor device and manufacturing method thereof WO2007004595A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US11/988,305 US9048103B2 (en) 2005-07-05 2006-06-26 Method for producing semiconductor device
EP06767745.0A EP1908118B1 (en) 2005-07-05 2006-06-26 Method for producing a semiconductor device
CN2006800245125A CN101218681B (en) 2005-07-05 2006-06-26 Method for producing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-196533 2005-07-05
JP2005196533A JP5033316B2 (en) 2005-07-05 2005-07-05 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
WO2007004595A2 WO2007004595A2 (en) 2007-01-11
WO2007004595A3 true WO2007004595A3 (en) 2007-05-24

Family

ID=36942485

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/313167 WO2007004595A2 (en) 2005-07-05 2006-06-26 Semiconductor device and manufacturing method thereof

Country Status (7)

Country Link
US (1) US9048103B2 (en)
EP (1) EP1908118B1 (en)
JP (1) JP5033316B2 (en)
KR (1) KR20080033351A (en)
CN (1) CN101218681B (en)
TW (1) TWI340404B (en)
WO (1) WO2007004595A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5033316B2 (en) * 2005-07-05 2012-09-26 日産自動車株式会社 Manufacturing method of semiconductor device
JP5352999B2 (en) * 2007-06-08 2013-11-27 日産自動車株式会社 Manufacturing method of semiconductor device
JP6070155B2 (en) 2012-12-18 2017-02-01 住友電気工業株式会社 Silicon carbide semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217358A1 (en) * 2002-04-26 2004-11-04 Nissan Motor Co., Ltd Silicon carbide semiconductor device

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JPH11251592A (en) * 1998-01-05 1999-09-07 Denso Corp Carbon silicon semiconductor device
US6246076B1 (en) * 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
JP4540142B2 (en) * 1999-01-19 2010-09-08 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP2001085686A (en) * 1999-09-13 2001-03-30 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
DE60031173T2 (en) * 2000-05-31 2007-01-18 Matsushita Electric Industrial Co., Ltd., Kadoma MISFET
US7067176B2 (en) * 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6767843B2 (en) * 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6610615B1 (en) * 2000-11-15 2003-08-26 Intel Corporation Plasma nitridation for reduced leakage gate dielectric layers
US6528373B2 (en) * 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
JP3890202B2 (en) 2001-03-28 2007-03-07 株式会社日立製作所 Manufacturing method of semiconductor device
JP4029595B2 (en) * 2001-10-15 2008-01-09 株式会社デンソー Method for manufacturing SiC semiconductor device
JP3620513B2 (en) * 2002-04-26 2005-02-16 日産自動車株式会社 Silicon carbide semiconductor device
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
WO2004049449A1 (en) * 2002-11-25 2004-06-10 National Institute Of Advanced Industrial Science And Technology Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20040217358A1 (en) * 2002-04-26 2004-11-04 Nissan Motor Co., Ltd Silicon carbide semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
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Also Published As

Publication number Publication date
TW200715356A (en) 2007-04-16
EP1908118A2 (en) 2008-04-09
EP1908118B1 (en) 2019-12-18
US20090026497A1 (en) 2009-01-29
JP2007019095A (en) 2007-01-25
TWI340404B (en) 2011-04-11
CN101218681A (en) 2008-07-09
KR20080033351A (en) 2008-04-16
US9048103B2 (en) 2015-06-02
CN101218681B (en) 2011-05-11
WO2007004595A2 (en) 2007-01-11
JP5033316B2 (en) 2012-09-26

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