WO2006134779A1 - シリコンウェーハ熱処理用石英ガラス治具及びその製造方法 - Google Patents
シリコンウェーハ熱処理用石英ガラス治具及びその製造方法 Download PDFInfo
- Publication number
- WO2006134779A1 WO2006134779A1 PCT/JP2006/310973 JP2006310973W WO2006134779A1 WO 2006134779 A1 WO2006134779 A1 WO 2006134779A1 JP 2006310973 W JP2006310973 W JP 2006310973W WO 2006134779 A1 WO2006134779 A1 WO 2006134779A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quartz glass
- heat treatment
- groove
- silicon wafer
- mounting member
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
Definitions
- the present invention relates to a silicon wafer heat treatment jig having a transparent groove face and a method for manufacturing the same, and more specifically, a particle or the like on the groove face of a wafer mounting member provided in a quartz glass jig for silicon wafer heat treatment.
- the present invention relates to a quartz glass jig for heat treatment of a silicon wafer having a transparent grooved surface with little material that contaminates the silicon wafer, and a method for manufacturing the same.
- quartz glass jig having high heat resistance and high purity has been used for transporting silicon wafers and holding them in a heating furnace.
- the quartz glass jig include a vertical furnace jig in which wafer mounting members 2 (four pieces) having a groove 3 shown in FIG. . Grooves of the wafer mounting member must be formed at a constant pitch and with high precision, and are usually grooved with a diamond blade.
- quartz glass is a brittle material, so when using a diamond blade, fine irregularities and microcracks are generated on the processed surface, which can damage the silicon wafer or the diamond blade.
- Patent Document 1 Japanese Patent Laid-Open No. 11-349338
- Patent Document 2 JP 2000-127020 A
- the present invention eliminates the attachment of particles of transition metal element foreign matter caused by glass dust, diamond blades, etc. due to the collapse of sharp irregularities due to the opening of minute irregularities and microcracks, and in hydrofluoric acid cleaning.
- This is a silicon wafer heat treatment stone that has a transparent groove face that can maintain a high degree of cleanness even when used for a long time with little dimensional change.
- the purpose is to provide a British glass jig.
- Another object of the present invention is to provide a method for producing the quartz glass jig.
- the present invention that achieves the above object provides a quartz glass jig for silicon wafer heat treatment provided with a wafer mounting member having a groove cutting surface by cutting, and the groove cutting surface of the wafer mounting member.
- the entire surface is transparent, and the surface roughness is 0.03 to 0.3 m in centerline average roughness (Ra), 0.2 to 3.0 ⁇ m in maximum roughness (Rmax), and 5%
- a quartz glass jig for silicon wafer heat treatment characterized in that the change rate of centerline average roughness and maximum roughness after etching with a hydrogen fluoride aqueous solution for 24 hours is 50% or less.
- the present invention relates to a quartz glass jig for silicon wafer heat treatment and a manufacturing method thereof.
- the wafer mounting member provided in the quartz glass jig for heat treatment of silicon wafers of the present invention is grooved by cutting, and the surface roughness of the entire surface is centerline average roughness (Ra). 0.03 to 0.3 / ⁇ ⁇ , maximum roughness (Rmax) of 0.2 to 3. O / zm, center line after 24 hours etching with 5% hot hydrogen fluoride aqueous solution
- the average roughness and maximum roughness change rate is 50% or less, and the groove cut surface is transparent.
- the quartz glass jig for heat treatment of a silicon wafer according to the present invention has a transition metal caused by glass dust, diamond blades, etc.
- the groove cut surface has fine irregularities, and even with hydrofluoric acid cleaning, there is little dimensional change and long-term use is possible. Cutting the centerline average roughness below 0.03 m is impractical in terms of productivity and cost, and if it exceeds 0.3 m, even if baked and finished, fine sharp irregularities and Microcracks may remain and damage the silicon wafer, or particles may be generated and contaminate the silicon wafer.
- the change rate of the centerline average roughness (Ra) and the maximum roughness (Rmax) after etching with a 5% hydrogen fluoride aqueous solution for 24 hours exceeds 50%, the unevenness of the groove surface becomes uneven. It changes with cleaning with hydrofluoric acid and cannot be used stably for a long time.
- the change rate of the centerline average roughness (Ra) and the maximum roughness (Rmax) is determined when the wafer mounting member is immersed in a 5% hydrogen fluoride aqueous solution for 0 to 24 hours.
- the woofer mounting member is made of a cylindrical or prismatic quartz glass material with a diamond blade with a coarse particle size, preferably a diamond blade with a particle size of # 250-350. Roughly cut to a groove width (d) of 3 to 5 mm, pitch (p) of 3 to 6 mm, groove depth of 4.5 to 10 mm, and then remove with a diamond blade with a small particle size, preferably a blade with a particle size of # 600 to 2000 It is manufactured by recutting to 0.0.06-0. 1 mm, then cleaning with hydrofluoric acid, and further baking and finishing the groove cut surface with an oxyhydrogen flame obtained from hydrogen gas and oxygen gas.
- This wafer mounting member is welded to Amanzaka or a pedestal and assembled in a quartz glass jig, and subjected to annealing treatment and hydrofluoric acid cleaning treatment.
- Examples of the diamond blade used in the above rough! Cutting process include a metal bond type diamond blade, a resin bond type diamond blade, and a vitrifide bond type diamond blade.
- Examples of the diamond blade used for recutting include: In the above-mentioned diamond blade, a blade with a fine particle size of # 600 to 2000 is used. More preferably, a diamond blade obtained by grinding metal bond diamond and sintering with resin bond is preferable.
- the quartz glass jig for heat treatment of silicon wafers of the present invention is caused by glass dust, diamond blades, or the like resulting from the collapse of sharp irregularities due to the opening of micro unevenness or micro-mouth cracks on the groove cut surface.
- This quartz glass jig for heat treatment of silicon wafers can be easily manufactured by roughing the grain size, cutting it with a diamond blade, then recutting it with a fine grained diamond blade, and baking the groove face.
- the surface roughness in the following examples and the like is a value measured by a surface roughness meter (HANDY SURF E-35A manufactured by Tokyo Seimitsu Co., Ltd.).
- the particles are The value is based on the “method of measuring one particle with a particle counter in liquid”.
- a 12 mm diameter bar was cut using a # 325 diamond blade at a peripheral speed of 800 mZmin, a feed speed of lOOmmZmin, a groove depth of 6 mm, a groove width of 3.4 mm, and a groove pitch of 3.5 mm.
- the resulting grooved bar is further cut using a # 1000 blade as shown in Fig. 3 to remove the side of the groove to 0.075mm and the bottom to 0.0mm, and baked using a gas wrench. Finished and made transparent, four grooved wafer mounting members with a groove width of 3.55 mm and a pitch width of 3.6 mm were created.
- Table 1 shows the surface roughness of the groove cut surface of this wafer mounting member.
- the centerline average roughness (Ra) and the centerline maximum roughness (Rmax) of the groove bottom surface are values measured at any three points on the groove bottom surface of the wafer mounting member.
- Ra and Rmax of the groove wall surface are values measured at the end, center and bottom of the grooved side wall surface of the wafer mounting member.
- the groove cut surface of the wafer mounting member of the present invention has a small surface roughness, is transparent, and almost no particles such as glass dust are generated due to the collapse of micro unevenness and micro cracks. I helped. Further, when the wafer mounting member is left in pure water for 5 minutes (hereinafter referred to as static treatment! /), And when ultrasonic waves are applied for 5 minutes during immersion in pure water (hereinafter referred to as application treatment). As shown in Table 2, the generation of particles produced a small amount of force. Further, when the groove cut surface was visually observed, it was transparent as in the surrounding quartz glass in which the whitishness due to the cutting trace disappeared.
- a bar with a diameter of 12 mm was cut with a # 325 diamond blade at a peripheral speed of 800 mZmin, a feed speed of lOOmmZmin, a groove depth of 6 mm, a groove width of 3.4 mm, and a groove pitch of 3.5 mm. Further, use # 1000 blade to remove the side of the groove 0.07 mm, re-cut to the bottom allowance 0.07 mm, make it transparent with a gas burner, and groove width 3.55 mm, pitch width 3.6 mm A grooved wafer mounting member was prepared.
- FIGS. 4 to 7 are graphs.
- the grooved wafer mounting member of the present invention has a Ra change rate of about 10% and a Rmax change even when immersed in a hydrofluoric acid cleaning solution for 24 hours. The rate was as small as about 12%, and the silicon wafer was stably heat-treated.
- Example 2 In the same way as in Example 1, a quartz glass strip was cut using a # 325 diamond blade at a peripheral speed of 8 OOm / min, a feed speed of lOOmmZmin, a groove depth of 6 mm, a groove width of 3.4 mm, and a groove pitch of 3.5 mm. Then, hydrofluoric acid was washed, and the groove cut surface was made transparent using a gas burner in the same manner as in Example 1. Table 1 shows the Ra and Rmax of the groove cut surface of the obtained wafer mounting member. Table 2 shows the measured values of particles. As shown in Table 2, there was much adhesion of particles in both the stationary treatment and the application treatment.
- Ra and Rmax in diamond grinding are values after 8 minutes of 5% hydrofluoric acid treatment
- Ra and Rmax in baking finish are values after 10 minutes of 5% hydrofluoric acid treatment.
- the quartz glass jig for heat treatment of silicon wafers of the present invention is free from contamination of silicon wafers by particles and maintains high cleanliness for a long period of time, and heat treatment of highly integrated semiconductor elements, particularly in a diffusion process. Useful.
- FIG. 1 is a perspective view of a quartz glass jig for a vertical furnace.
- FIG. 2 is a partially enlarged view of a woofer mounting member.
- FIG. 3 is an explanatory view of forming a wafer mounting groove.
- FIG. 4 is a graph showing changes in Ra when immersed in a hydrofluoric acid cleaning solution on the groove bottom surface of a wafer mounting member for a long period of time.
- FIG. 5 is a graph showing changes in Rmax when immersed in a hydrofluoric acid cleaning solution on the groove bottom surface of a wafer mounting member for a long period of time.
- FIG. 6 is a graph showing changes in Ra when immersed in a hydrofluoric acid cleaning solution for a groove wall surface of a wafer mounting member for a long period of time.
- FIG. 7 is a graph showing a change in Rmax when immersed in a hydrofluoric acid cleaning solution for a groove wall surface of a wafer mounting member for a long period of time.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007521242A JP4889044B2 (ja) | 2005-06-16 | 2006-06-01 | リコンウェーハ熱処理用石英ガラス治具及び該冶具が具備するウェーハ載置用部材の溝切面の形成方法 |
CN2006800216917A CN101199040B (zh) | 2005-06-16 | 2006-06-01 | 硅晶片热处理用石英玻璃夹具及其制造方法 |
US11/921,969 US7997956B2 (en) | 2005-06-16 | 2006-06-01 | Quartz glass tool for heat treatment of silicon wafer and process for producing the same |
EP06747075A EP1895574A1 (en) | 2005-06-16 | 2006-06-01 | Quartz glass tool for heat treatment of silicon wafer and process for producing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-176685 | 2005-06-16 | ||
JP2005176685 | 2005-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006134779A1 true WO2006134779A1 (ja) | 2006-12-21 |
Family
ID=37532144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/310973 WO2006134779A1 (ja) | 2005-06-16 | 2006-06-01 | シリコンウェーハ熱処理用石英ガラス治具及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7997956B2 (ja) |
EP (1) | EP1895574A1 (ja) |
JP (1) | JP4889044B2 (ja) |
KR (1) | KR100951005B1 (ja) |
CN (1) | CN101199040B (ja) |
TW (1) | TW200715414A (ja) |
WO (1) | WO2006134779A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101524877B (zh) * | 2008-11-25 | 2011-08-31 | 河南鸿昌电子有限公司 | 一种切割半导体晶片的固定方法 |
US10528030B2 (en) | 2016-06-13 | 2020-01-07 | Garrett Transportation I Inc. | Casting machine stock verification methods and systems |
US20190321932A1 (en) * | 2016-06-14 | 2019-10-24 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass member with increased exposed area, method for manufacturing same, and blade with multiple peripheral cutting edges |
KR102019817B1 (ko) * | 2017-09-07 | 2019-09-09 | 주식회사 원익큐엔씨 | 쿼츠 표면 처리 방법 |
CN115256251B (zh) * | 2022-07-19 | 2024-06-25 | 江苏赛扬精工科技有限责任公司 | 一种树脂基复合结合剂磨盘及其制备方法 |
CN115972418B (zh) * | 2023-03-20 | 2023-07-04 | 西安中威新材料有限公司 | 晶圆扩散用的碳化硅陶瓷晶舟开齿设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56145123A (en) * | 1980-04-04 | 1981-11-11 | Fujitsu Ltd | Quartz tool and its preparation |
WO2004051724A1 (ja) * | 2002-12-03 | 2004-06-17 | Shin-Etsu Quartz Products Co., Ltd. | 半導体を製造する工程で使用するシリカガラス治具およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4393601B2 (ja) | 1998-06-05 | 2010-01-06 | 東ソー・クォーツ株式会社 | 石英ガラス部材の切削溝表面仕上げ方法及び自動溝加熱装置 |
JP3805539B2 (ja) | 1998-10-27 | 2006-08-02 | 信越石英株式会社 | ウェハーボート |
JP4165736B2 (ja) | 2002-07-18 | 2008-10-15 | 株式会社寺岡製作所 | 粘着シート用下塗剤組成物及び粘着シート |
-
2006
- 2006-06-01 WO PCT/JP2006/310973 patent/WO2006134779A1/ja active Application Filing
- 2006-06-01 JP JP2007521242A patent/JP4889044B2/ja not_active Expired - Fee Related
- 2006-06-01 CN CN2006800216917A patent/CN101199040B/zh not_active Expired - Fee Related
- 2006-06-01 US US11/921,969 patent/US7997956B2/en not_active Expired - Fee Related
- 2006-06-01 EP EP06747075A patent/EP1895574A1/en not_active Withdrawn
- 2006-06-01 KR KR1020077027658A patent/KR100951005B1/ko active IP Right Grant
- 2006-06-13 TW TW095120978A patent/TW200715414A/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56145123A (en) * | 1980-04-04 | 1981-11-11 | Fujitsu Ltd | Quartz tool and its preparation |
WO2004051724A1 (ja) * | 2002-12-03 | 2004-06-17 | Shin-Etsu Quartz Products Co., Ltd. | 半導体を製造する工程で使用するシリカガラス治具およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI307126B (ja) | 2009-03-01 |
TW200715414A (en) | 2007-04-16 |
CN101199040A (zh) | 2008-06-11 |
JPWO2006134779A1 (ja) | 2009-01-08 |
EP1895574A1 (en) | 2008-03-05 |
KR20080012909A (ko) | 2008-02-12 |
KR100951005B1 (ko) | 2010-04-02 |
US7997956B2 (en) | 2011-08-16 |
US20080149575A1 (en) | 2008-06-26 |
JP4889044B2 (ja) | 2012-02-29 |
CN101199040B (zh) | 2010-05-19 |
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