WO2006114854A1 - Retainer ring for cmp device, method of manufacturing the same, and cmp device - Google Patents

Retainer ring for cmp device, method of manufacturing the same, and cmp device Download PDF

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Publication number
WO2006114854A1
WO2006114854A1 PCT/JP2005/007067 JP2005007067W WO2006114854A1 WO 2006114854 A1 WO2006114854 A1 WO 2006114854A1 JP 2005007067 W JP2005007067 W JP 2005007067W WO 2006114854 A1 WO2006114854 A1 WO 2006114854A1
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WO
WIPO (PCT)
Prior art keywords
retainer ring
polishing
pressing
polishing pad
wafer
Prior art date
Application number
PCT/JP2005/007067
Other languages
French (fr)
Japanese (ja)
Inventor
Tsutomu Ichinoshime
Original Assignee
Nippon Seimitsu Denshi Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seimitsu Denshi Co., Ltd. filed Critical Nippon Seimitsu Denshi Co., Ltd.
Priority to DE112005003420T priority Critical patent/DE112005003420T5/en
Publication of WO2006114854A1 publication Critical patent/WO2006114854A1/en
Priority to US11/889,505 priority patent/US20070298693A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the present invention relates to a CMP (Chemical Mechanical Polishing) apparatus that chemically and mechanically polishes a wafer, and more particularly to an outer periphery of a wafer disposed (mounted) in a holding head of a CMP apparatus.
  • CMP Chemical Mechanical Polishing
  • This CMP apparatus includes, for example, a rotatable surface plate, a polishing pad disposed on the surface plate, a holding head that holds the wafer and presses it against the polishing pad, and a slurry supply nozzle. Power is also composed. Further, the holding head includes a retainer ring that surrounds the outer periphery of the wafer, an elastic film that presses the upper surface of the wafer, an air chamber that is surrounded by the elastic film, the retainer ring, and the head body, and the air chamber. Forces such as an air supply path for supplying pressurized air to the pipe are also configured.
  • the retainer ring surrounds the outer periphery of the wafer to prevent the wafer from popping out, and presses the polishing surface (surface) of the polishing pad to flatten and refine the polishing surface of the polishing pad that polishes the wafer. ). For this reason, the surface roughness of the retaining ring pressing surface (the surface pressing the polishing pad) needs to be small.
  • a new retainer ring is attached to the holding head of the CMP apparatus, and dozens of dummy wafers (break-in ueno) are polished, and after confirming that proper polishing performance has been obtained, the product wafer is polished. Had to start.
  • Such a break-in polishing requires a lot of time and labor, which has been a factor in reducing the production rate of wafers.
  • a surface of the retainer ring pressing surface having a predetermined sliding force is known (for example, see Patent Document 1). See .;). That is, in this retainer ring, the surface roughness of the pressing surface is set to a maximum height (Rmax) of 0.8 m or less, so that break-in polishing can be made unnecessary.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-126995
  • Patent Document 1 the surface roughness of the pressing surface is set to 0.8 / zm or less at the maximum height, so that the in-plane uniformity of the polishing rate and the polishing rate is increased. It only shows how fast (mmZmin) can be polished, it does not indicate that wafers can be polished with high flatness! /.
  • the flatness of the wafer polished by the CMP apparatus depends on the material of the retainer ring and the surface roughness of the pressing surface. That is, the wafer can be polished with high flatness by specifying the material of the retainer ring and the surface roughness of the pressing surface.
  • Patent Document 1 describes the material of the retainer ring. It is not clear what kind of retainer ring is used, and it is possible to eliminate the need for break-in polishing by reducing the surface roughness of the pressing surface to a maximum height of 0.8 m or less.
  • an object of the present invention is to provide a retainer ring that can effectively minimize the time required for break-in polishing and a method for manufacturing the same.
  • the invention according to claim 1 includes a polishing node disposed on a surface plate, and a holding head that holds the wafer and presses the polishing pad against the polishing pad.
  • a CMP machine that mechanically polishes, it is a retainer ring for CMP equipment that is arranged in the holding head, surrounds the outer periphery of the wafer in a ring shape, and presses the polishing surface of the polishing pad.
  • the surface roughness of the pressing surface for pressing the polishing surface of the polishing pad is characterized by a center line average roughness (arithmetic average roughness) of 0.01 ⁇ m or less.
  • the invention according to claim 2 is the retainer ring for CMP apparatus according to claim 1, wherein a held portion is formed on the back surface of the retainer ring located on the back surface of the press surface, and the press surface is polished. Being featured! /
  • the invention described in claim 3 includes a polishing pad disposed on a surface plate and a holding head that holds the wafer and presses it against the polishing pad, and mechanically polishes the wafer.
  • a manufacturing method of an engineering plastic retainer ring that is disposed in a holding head, surrounds the outer periphery of a wafer in a ring shape, and presses the polishing surface of the polishing pad. After processing the shape surface excluding the pressing surface to be pressed to the specified dimensions, the retainer ring is held without applying the outer and inner pressures to the retainer ring, and the pressing surface is machined in this state, and the surface is roughened. Is characterized by polishing until the average roughness of the center line is 0.01 ⁇ m or less.
  • the invention described in claim 4 is a method of manufacturing a retainer ring for a CMP apparatus according to claim 3.
  • the polishing process is performed by a polishing apparatus capable of adjusting the pressing force and rotational speed of the slurry and the amount of slurry supplied by the slurry supply means.
  • the invention according to claim 5 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 4, wherein the break-in process is performed by attaching the retainer ring for break-in to the polishing apparatus before performing the polishing process. It is characterized by that.
  • the invention according to claim 6 is the manufacturing method of the retainer ring for a CMP apparatus according to any one of claims 3 to 5, wherein the back surface side of the retainer ring located on the back surface of the pressing surface It is characterized by carrying out machining and polishing while holding only this.
  • the invention according to claim 7 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 6, wherein a retained portion is formed on the back surface of the retainer ring, and the retained portion for retaining the retained portion is provided. It is characterized in that the retainer ring is held by the machine tool and the machine is machined in this state.
  • the invention according to claim 8 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 7, wherein the polishing machine tool for supporting the back side of the machining jig located on the back side of the holding portion is used.
  • the tool is characterized in that the machining jig holding the retainer ring is supported and polishing is performed in this state.
  • the invention described in claim 9 is a machining jig used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 7, and is a flat plate-like shape that comes into surface contact with the back surface of the retainer ring.
  • the mounting surface includes a holding portion that holds a held portion formed on the back surface of the retainer ring.
  • the invention according to claim 10 is a polishing tool used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 8, and is a flat plate-like shape and located on the back surface of the mounting surface. It is characterized in that it includes a concave support portion that accommodates the back side of the machining jig, fits to the outer peripheral surface of the machining jig, and supports the back side of the machining jig.
  • the invention according to claim 11 includes a polishing pad disposed on a surface plate and a holding head that holds the wafer and presses the wafer against the polishing pad, and a ring-like wafer is provided in the holding head.
  • a retainer ring that surrounds the outer periphery of the wafer and presses the polishing surface of the polishing pad is arranged.
  • the retainer ring is made of an engineering plastic material, and the polishing pad It is characterized in that the surface roughness of the pressing surface of the retainer ring that presses the polished surface is set to 0.01 ⁇ m or less in terms of centerline average roughness.
  • the surface roughness of the pressing surface is not more than 0.01 m in center line average roughness.
  • the time required for LW polishing it is possible to minimize the time required for LW polishing. That is, since the surface roughness of the pressing surface of the retainer ring is as extremely small as 0.01 m or less, immediately after the retainer ring is mounted on the holding head of the CMP apparatus, the polishing surface of the polishing pad is pressed by the pressing surface of the retainer ring. Is flattened and miniaturized well (to a high level).
  • the pressing surface is machined and polished (lapping) after processing the shape surface excluding the pressing surface to a predetermined dimension, Since the shearing force that is not deformed by subsequent processing is machined or the like while holding the retainer ring without applying the outer peripheral pressure or the inner peripheral pressure, the pressing surface is prevented from being deformed by the holding. Furthermore, after the flatness and surface roughness of the pressing surface reach a certain level (level) by machining (such as cutting or grinding), polishing is performed. By performing this, polishing can be performed satisfactorily. As a result, the pressing surface can be finished with high flatness and extremely small surface roughness.
  • the pressing force, the rotational speed, and the slurry supply amount by the pressing means are adjusted according to the material and size of the retainer ring and the type of slurry (abrasive).
  • the pressing surface of the retainer ring can be polished with high flatness and extremely small surface roughness.
  • the polishing pad (cross, etc.) of the polishing apparatus is optimized (flattened, miniaturized) and stabilized, and in the subsequent polishing process Therefore, it is possible to process the pressing surface of the retainer ring satisfactorily (with high, flatness and extremely small surface roughness).
  • the pressing surface is deformed by holding the retainer ring because the pressing surface is machined in a state where the held portion formed on the back surface of the retainer ring is held. This prevents the pressing surface from being satisfactorily machined.
  • the holding force since the held portion formed on the back surface of the retainer ring is held by the machining jig, the pressing surface of the retainer ring is deformed by the holding. Is prevented.
  • the retainer ring is held by the machining jig while the back surface of the retainer ring is in surface contact with the mounting surface of the machining jig, so that the pressing surface of the retainer ring is stabilized during machining. As a result, the pressing surface is good It becomes possible to process.
  • the surface roughness of the pressing surface of the retainer ring is set to 0.01 m or less in terms of the center line average roughness, the time required for LW polishing in general is reduced. It can effectively be minimized. That is, since the surface roughness of the pressing surface of the retainer ring is as extremely small as 0.01 m or less, the polishing surface of the polishing pad is satisfactorily flattened and refined by the pressing surface immediately after the retainer ring is mounted on the holding head. The For this reason, appropriate polishing performance can be obtained by performing break-in polishing for a short time without performing break-in polishing. As a result, it is possible to effectively reduce the time and labor required for break-in polishing and improve the production rate of wafers.
  • FIG. 1 is a front view showing a schematic configuration of a CMP apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a holding head of a CMP apparatus according to an embodiment of the present invention.
  • FIG. 3 is a plan view (a) and a side sectional view (b) of a retainer ring for a CMP apparatus according to an embodiment of the present invention.
  • FIG. 4 is a manufacturing process flow diagram of a CMP apparatus retainer ring according to an embodiment of the present invention.
  • FIG. 5 is a front view (partially sectional view) of a machining jig for pre-polishing (mechanical caloring) the retainer ring for a CMP apparatus according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view of a polishing jig for polishing a retainer ring for a CMP apparatus according to an embodiment of the present invention.
  • FIG. 7 is a view showing measurement results of the surface roughness of the pressing surface of the retainer ring for CMP apparatus according to the embodiment of the present invention.
  • 8] A diagram showing measurement points of the surface roughness of the pressing surface of the retainer ring for CMP apparatus according to the embodiment of the present invention.
  • FIG. 1 is a front view showing a schematic configuration of a CMP apparatus 1 according to an embodiment of the present invention.
  • the CMP apparatus 1 has the same configuration as the CMP apparatus that is widely used except for the retainer ring 8 described later, and a detailed description thereof is omitted here. Equipped with a polishing pad 3 (such as a cloth), a holding head 4, a slurry supply nozzle 5 (slurry supply means) and a dresser 6 (sharpening means) disposed on the board 2. Polishing.
  • the holding head 4 holds the wafer W and presses the surface to be polished W1 against the polishing pad 3.
  • the holding head 4 can move on the polishing pad 3 while rotating (spinning).
  • the holding head 4 includes a head main body 7, a retainer ring 8 disposed at a lower portion of the head main body 7, and an upper surface W2 of the wafer W positioned in the retainer ring 8. And an elastic body film 9. Pressurizing air is supplied to the air chamber 10 surrounded by the head body 7, the retainer ring 8, and the elastic body film 9, and is pressed against the wafer W polishing pad 3 through the elastic body film 9.
  • the retainer ring 8 surrounds the outer periphery of the wafer W, prevents the wafer W from jumping out of the holding head 4, and presses the polishing surface 3a (surface) of the polishing pad 3 to polish the wafer W.
  • the polishing surface 3a (the portion in contact with the polished surface Wl of wafer W) is flattened and refined (optimized). That is, the polishing surface 3a of the polishing pad 3 has a low surface roughness that is low in flatness due to the slurry (abrasive) 5a, and the polishing surface 3a is increased in flatness by the retainer ring 8, and The surface roughness is reduced.
  • This retainer ring 8 is made of a PPS (polyphenylene sulfide, engineering plastic) material in consideration of chemical resistance and mechanical properties, and has a ring shape as shown in FIG.
  • the pressing surface 8a that presses the polishing surface 3a of the polishing pad 3 is formed with a plurality of groove-shaped slits 8b that release (discharge) polishing debris.
  • a plurality of screw inserts 8d (held portions) in which female screws 8e are formed are inserted into the back surface 8c of the retainer ring 8 positioned on the back surface of the pressing surface 8a.
  • this screw insert 8 d is a substantially cylindrical shape, with a male screw formed on the outer periphery and a female screw 8e formed on the inner periphery. Further, the surface roughness of the pressing surface 8a is set to a center line average roughness (arithmetic average roughness, Ra) of 0.01 IX m or less (polishing power).
  • the PPS material is roughly cut into a shape close to the final shape and dimensions.
  • the back face 8c side is tapped (internal thread forming force) (step 2), and the screw insert 8d is screwed into (inserted in, step 3).
  • the pressing surface 8a side and the back surface 8c side are cut so that the height (thickness) of the retainer ring 8 has a predetermined dimension.
  • the outer diameter is cut to a predetermined dimension (step 6), and a milling force is applied to form the slit 8b on the pressing surface 8a side (step 7).
  • step 8 burrs generated by these processes are removed (step 8), and the back surface 8c side is cut again (step 9). At this time, the cutting depth is reduced so that the flatness on the back surface 8c side is increased.
  • the shape surface excluding the pressing surface 8a is processed to a predetermined dimension by the steps 1 to 9.
  • the pressing surface 8a of the retainer ring 8 is pre-polished (machined) using a mechanical force jig 11 as shown in FIG. 5 (step 10).
  • the machining jig 11 is a stainless steel disk (flat plate), and its outer diameter is substantially the same as the outer diameter of the retainer ring 8.
  • a bolt hole 11c is formed at the same position (same pitch) as the screw insert 8d of the retainer ring 8, and the bolt 12 (holding portion) is inserted into the rear l ib side force mounting surface 11a side through this bolt hole 11c. It is what has been entered.
  • the rear surface 8c of the retaining ring 8 is brought into surface contact with the mounting surface 11a of the mechanical force jig 11, and the bolt 12 is fastened to the screw insert 8d.
  • the outer ring pressure and the inner ring pressure are not applied to the retainer ring 8, and the retainer ring 8 is held by the mechanical force jig 11.
  • the outer peripheral portion of the machining jig 11 is gripped by a lathe chuck, and the pressing surface 8a of the retainer ring 8 is plane-cut by the lathe. At this time, the cut is made small and the turning of the lathe is made small so that the flatness of the pressing surface 8a is high and the surface roughness is small.
  • the pressing surface 8a is cut by a lathe.
  • other machine calorie such as grinding is used. May be performed.
  • the pressing surface 8a of the retainer ring 8 is polished with a polishing tool 13 as shown in FIG. 6 (step 11).
  • the polishing tool 13 is a disk (flat plate) made of a polysalt cocoon bullet, and has a concave support portion 13a formed at the center.
  • the inner diameter of the support portion 13a is the same as the outer diameter of the machining jig 11 so that the outer peripheral surface of the mechanical force jig 11 fits closely.
  • the back surface l ib side of the machining jig 11 is accommodated (inserted) in the support portion 13a, so that the back surface l ib of the machining jig 11 is supported by the bottom surface 13b of the support portion 13a.
  • a protective cloth 14 for protecting the mechanical force jig 11 is disposed on the bottom surface 13b.
  • the pressing surface 8a is polished by such a polishing force jig 13 while the mechanical force jig 11 holding the retainer ring 8 is supported.
  • This polishing process is performed by a polishing apparatus (lapping machine, polisher board) having the same configuration as the CMP apparatus 1 described above. That is, this polishing apparatus includes a polishing pad (equivalent to the polishing pad 3) disposed on the surface plate, and a pressing step for pressing the pressing surface 8a against the polishing pad while rotating the retainer ring 8 ( Equivalent to holding head 4) and slurry supply means (equivalent to slurry supply nozzle 5) for supplying slurry to the polishing pad, adjusting the pressing force and rotational speed by the pressing means, and the slurry supply amount by the slurry supplying means It is possible.
  • this polishing apparatus includes a polishing pad (equivalent to the polishing pad 3) disposed on the surface plate, and a pressing step for pressing the pressing surface 8a against the polishing pad while rotating the retainer ring 8 ( Equivalent to holding head 4) and slurry supply means (equivalent to slurry supply nozzle 5) for supplying slurry to the polishing
  • the polishing conditions such as the pressing force and rotational speed by the pressing means, the slurry supply amount, etc. are adjusted.
  • the pressing surface 8a of the ring 8 is polished. An example of specific polishing conditions is shown below.
  • Pressing force by pressing means 0.2 kgf / cm 2
  • a break-in retainer ring (dummy retainer ring) is attached to perform a break-in force check.
  • the polishing apparatus The polishing pad is optimized (flattened, miniaturized) and stabilized. And this After the break-in, the surface is subjected to polishing under the above-described polishing conditions until the surface roughness force of the pressing surface 8a of the retainer ring 8 becomes 0.01 m or less in the center line average roughness.
  • polishing debris is removed by air blow, each part is measured (step 12), and the retainer ring 8 having a predetermined size and surface roughness is ultrasonically cleaned (step 13). The manufacturing process is completed.
  • the center line average roughness is 0.220 m at measuring point A and 0.201 at measuring point B, and the maximum height is 1.776 ⁇ m at measuring point A and 1.923 ⁇ m at measuring point B. It was.
  • the surface roughness is 0.01 m or less in terms of the center line average roughness, it is said to be in a mirror surface state, and the pressing surface 8a of the retainer ring 8 has a surface roughness.
  • the surface roughness "Rq” is the root mean square roughness
  • “Rz” is the ten-point average roughness
  • “Rc” is the average unevenness height
  • “Rp” is the maximum peak height
  • “Rv” is the maximum.
  • the valley depth, “Rt”, indicates the maximum cross-sectional height.
  • the surface roughness of the pressing surface 8a of the retainer ring 8 is extremely small as 0.01 ⁇ m or less in terms of centerline average roughness. For this reason, when the retainer ring 8 is attached to the CMP apparatus, it is possible to effectively minimize the time required for break-in polishing. That is, since the surface roughness of the pressing surface 8a is extremely small, immediately after the retainer ring 8 is mounted on the holding head 4 of the CMP apparatus 1, the polishing surface 3a of the polishing pad 3 is satisfactorily (high) by the pressing surface 8a. Flattened and refined).
  • the outer surface work-in and the break-in polishing are required before starting the polishing of the product wafer W (wafer produced as a product). It was.
  • the retainer ring is roughly ground for about 10 minutes with a dedicated polishing machine (poly polisher), then finish-polished for about 15 minutes with another dedicated polishing machine and ultrasonically cleaned for about 20 minutes.
  • the break-in polishing the retainer ring was attached to the holding head 4 and 20 or more dummy wafers (break-in wafers) were polished to confirm that proper polishing performance was obtained.
  • the present retainer ring 8 since the surface roughness of the pressing surface 8a is extremely small, it is not necessary to perform an external setup operation. Further, although slightly different depending on the processing accuracy of the CMP apparatus 1 and the type and condition of the polishing pad 3 (flatness, etc.), immediately after the retainer ring 8 is mounted on the holding head 4, it is generally used for LW polishing.
  • the surface to be polished W1 of Wafer W It can be polished to extremely high flatness.
  • the pressing surface of the conventional retainer ring is only cut by, for example, a lathe, and the surface roughness is about 3.0 m as the center line average roughness.
  • the reason why the surface roughness force and the center line average roughness of the pressing surface 8a of the retainer ring 8 is as small as 0.01 m or less is that the manufacturing process as described above has been performed. That is, first, after the shape surface excluding the pressing surface 8a is processed to a predetermined size in steps 1 to 9, the pressing surface 8a is subjected to pre-polishing processing (step 10) and polishing processing (step 11). Therefore, the processed pressing surface 8a is not deformed. In other words, if another shape surface is processed after processing the pressing surface 8a to a predetermined dimension, the pressing surface 8a may be deformed and the dimensions may change. There is no such thing.
  • the pre-polishing process and the polishing process are performed in a state where the retainer ring 8 is held without applying an outer peripheral pressure and an inner peripheral pressure to the retainer ring 8, the pressing surface 8a is prevented from being deformed by the holding.
  • the bolt 12 of the machining jig 11 is fastened to the screw insert 8d of the retainer ring 8 so that the retainer ring 8 is held by the machining jig 11, and this holding causes the pressing surface. 8a is not deformed.
  • the pressing surface 8a of the retainer ring 8 is stabilized during the pre-polishing caulking.
  • the pressing surface 8a is subjected to good caloring before polishing (high flatness and small surface roughness).
  • the pressing surface 8a has a high degree of flatness and is extremely small by performing polishing after the flatness and surface roughness of the pressing surface 8a reach a certain level (level) by this pre-polishing processing. It becomes possible to finish the surface roughness (polishing).
  • step 11 the back surface l ib side of the machining jig 11 holding the retainer ring 8 is supported by the polishing force jig 13, so that the retainer ring 8 is pressed by this support.
  • Surface 8a is not deformed. Support force of polishing jig 13 Since 3a is fitted to the outer peripheral surface of the machining jig 11, the lateral displacement of the mechanical force jig 11 (retainer ring 8) is prevented.
  • the processing force (polishing power) applied to the pressing surface 8a of the retainer ring 8 is appropriate.
  • the pressing surface 8a is stabilized during polishing.
  • the pre-polishing calorie and the polishing process are continuously performed. Therefore, the holding accuracy and holding stability by the machining jig 11 are maintained.
  • the pressing surface 8a can be polished to a high flatness, an extremely small V, and a surface roughness.
  • the pressing force and rotational speed by the pressing means, the amount of slurry supply, etc. are adjusted according to the material and size of the retainer ring 8 and the type of the slurry 5a. Therefore, the pressing surface 8a of the retainer ring 8 can be polished with high flatness and extremely small surface roughness.
  • the break-in force due to the break-in retainer ring is applied, and this break-in force optimizes the polishing pad of the polishing apparatus (flattening, miniaturization) Stabilized. Then, since the pressing surface 8a of the retainer ring 8 is polished after the break-in processing, the pressing surface 8a can be processed satisfactorily (with high flatness and extremely small surface roughness).
  • the surface roughness of the pressing surface 8a of the tener ring 8 can be polished (finished) to an extremely small value of 0.01 m or less in the center line average roughness.
  • the retainer ring 8 is made of PPS.
  • PEEK polyether etherketone
  • PET polyethylene terephthalate
  • POM polyacetals
  • PI polyimide
  • Fig. 7 shows the result of measuring the surface roughness of the pressing surface after forming the retainer ring with PEEK material and performing the same manufacturing process as above.
  • the surface roughness was 0.009 m in centerline average roughness, and at the maximum height,
  • the fixed point A was 0.076 ⁇ m and the measurement point B was 0.074 ⁇ m.
  • the surface roughness of the PEEK retainer ring is slightly smaller than that of the main PPS retainer ring 8, and the hardness of the PEEK material is slightly higher (hard) than the PPS material.
  • the value of sample 4 in Fig. 7 is the measurement result of the surface roughness when the pressing surface of the retainer ring made of PEEK is polished manually.
  • the surface roughness of the pressing surface can be further reduced by polishing the pressing surface with a slurry having a small particle diameter.
  • a slurry having a small particle diameter For example, when the pressing surface of a retainer ring made of PPS was polished with a 1.2 ⁇ m slurry, a smaller surface roughness was obtained as shown in FIG.
  • the center line average roughness is 0.004 ⁇ m at measurement point A and 0.0 05 ⁇ m at measurement point B, and 0.049 ⁇ m at measurement point A and measurement point B at the maximum height. It was 0.05 a l / zm.
  • the surface roughness of the pressing surface can be further reduced by reducing the particle size of the slurry according to the material and hardness of the retainer ring.
  • measurement points C, D, and E are the measurement positions shown in FIG.
  • the CMP apparatus retainer ring according to the present invention can minimize the time required for break-in polishing, and can improve and stabilize wafer production quality. It is extremely useful as a retainer ring.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A retainer ring capable of effectively minimizing a time required for breaking-in polishing. In a CMP device (1) polishing a wafer (W) in chemical machinery manner, the retainer ring (8) disposed in a holding head (4), formed in a ring shape, surrounding the outer periphery of the wafer (W), and pressing the polishing surface (3a) of a polishing pad (3) is formed of an engineering plastic material such as a PPS. The surface roughness of the pressing surface (8a) of the retainer ring pressing the polishing surface (3a) of the polishing pad (3) is set to 0.01 μm or less in centerline average height (Ra).

Description

明 細 書  Specification
CMP装置用リテーナリングとその製造方法、および、 CMP装置 技術分野  Retainer ring for CMP apparatus, manufacturing method thereof, and CMP apparatus technical field
[0001] 本発明は、ゥエーハを化学機械的に研磨する CMP (Chemical Mechanical P olishing ;ィ匕学機械的研磨)装置に関し、特に、 CMP装置の保持ヘッド内に配設（ 装着）されゥエーハの外周を囲うリテーナリングに関する。  TECHNICAL FIELD [0001] The present invention relates to a CMP (Chemical Mechanical Polishing) apparatus that chemically and mechanically polishes a wafer, and more particularly to an outer periphery of a wafer disposed (mounted) in a holding head of a CMP apparatus. Retainer ring surrounding
背景技術  Background art
[0002] 半導体デバイスの高集積化、高性能化が進むに伴い、水平方向（平面上)の寸法 力 S小さくなるとともに、垂直方向の構造が微細化、多層化されている。そして、このよう な微細化、多層化を実現するためには、半導体基板 (シリコン基板など)の平面度（ 平坦度）が高い必要がある。このため、ゥエーハの段階で平面度を高めることが求め られ、このような要求に応えるものとして、 CMP装置が用いられている。  [0002] As the integration and performance of semiconductor devices increase, the dimensional force S in the horizontal direction (on the plane) decreases, and the structure in the vertical direction is miniaturized and multilayered. In order to realize such miniaturization and multilayering, the flatness (flatness) of a semiconductor substrate (such as a silicon substrate) needs to be high. For this reason, it is required to increase the flatness at the wafer level, and CMP equipment is used to meet such demands.
[0003] この CMP装置は、例えば、回転可能な定盤と、この定盤の上に配置された研磨パ ッドと、ゥエーハを保持して研磨パッドに押圧する保持ヘッドおよび、スラリ供給ノズル など力も構成されている。さらに、保持ヘッドは、ゥエーハの外周を囲うリテーナリング と、例えば、ゥエーハの上面を押圧する弾性体膜と、この弾性体膜とリテーナリングと ヘッド本体とによって囲まれた空気室と、この空気室に加圧用空気を供給する空気 供給路など力も構成されている。そして、リテーナリングは、ゥエーハの外周を囲いゥ エーハの飛び出しを防止するとともに、研磨パッドの研磨面 (表面）を押圧し、ゥエー ハを研磨する研磨パッドの研磨面を平坦化、微細化 (適正化)するものである。このた め、リテーナリングの押圧面 (研磨パッドを押圧する面）の表面粗さが小さい必要があ る。  [0003] This CMP apparatus includes, for example, a rotatable surface plate, a polishing pad disposed on the surface plate, a holding head that holds the wafer and presses it against the polishing pad, and a slurry supply nozzle. Power is also composed. Further, the holding head includes a retainer ring that surrounds the outer periphery of the wafer, an elastic film that presses the upper surface of the wafer, an air chamber that is surrounded by the elastic film, the retainer ring, and the head body, and the air chamber. Forces such as an air supply path for supplying pressurized air to the pipe are also configured. The retainer ring surrounds the outer periphery of the wafer to prevent the wafer from popping out, and presses the polishing surface (surface) of the polishing pad to flatten and refine the polishing surface of the polishing pad that polishes the wafer. ). For this reason, the surface roughness of the retaining ring pressing surface (the surface pressing the polishing pad) needs to be small.
[0004] 一方、このようなリテーナリングは研磨パッドを押圧するため、研磨パッドによってその 押圧面自体が研磨され、消耗されていく。このため、定期的にリテーナリングを交換し なければならないが、リテーナリングの押圧面の表面粗さが大きいと、所定の研磨性 能、すなわちゥエーハの平面度が得られない。このため、リテーナリングを交換した場 合には、製品ゥエーハ (製品として生産されるゥエーハ)の研磨を開始する前に、新 たに装着したリテーナリングの慣らし研磨をする必要があった。すなわち、新たなリテ ーナリングを CMP装置の保持ヘッドに装着し、数十枚のダミーゥエーハ (慣らし用ゥ エーノ、)を研磨し、適正な研磨性能が得られたことを確認した後に、製品ゥエーハの 研磨を開始する必要があった。そして、このような慣らし研磨には多くの時間と労力と を要し、ゥエーハの生産稼働率を低下させる要因となっていた。 [0004] On the other hand, since such a retainer ring presses the polishing pad, the pressing surface itself is polished and consumed by the polishing pad. For this reason, it is necessary to periodically replace the retainer ring. If the surface roughness of the pressing surface of the retainer ring is large, a predetermined polishing performance, that is, the flatness of the wafer cannot be obtained. For this reason, if the retainer ring is changed, the product wafer (wafer produced as a product) must be polished before starting to polish. It was necessary to break-in the retainer ring that had just been installed. In other words, a new retainer ring is attached to the holding head of the CMP apparatus, and dozens of dummy wafers (break-in ueno) are polished, and after confirming that proper polishing performance has been obtained, the product wafer is polished. Had to start. Such a break-in polishing requires a lot of time and labor, which has been a factor in reducing the production rate of wafers.
[0005] このようなことから、慣らし研磨に要する時間を短縮ィ匕するために、リテーナリングの 押圧面を所定の滑ら力さに表面加工したものが知られている（例えば、特許文献 1参 照。；)。すなわち、このリテーナリングは、その押圧面の表面粗さを最大高さ (Rmax) で 0. 8 m以下にすることで、慣らし研磨を不要にできるとするものである。  [0005] For this reason, in order to reduce the time required for break-in polishing, a surface of the retainer ring pressing surface having a predetermined sliding force is known (for example, see Patent Document 1). See .;). That is, in this retainer ring, the surface roughness of the pressing surface is set to a maximum height (Rmax) of 0.8 m or less, so that break-in polishing can be made unnecessary.
特許文献 1 :特開 2002— 126995号公報  Patent Document 1: Japanese Patent Application Laid-Open No. 2002-126995
発明の開示  Disclosure of the invention
発明が解決しょうとする課題  Problems to be solved by the invention
[0006] しかしながら、ゥエーハに要求される平面度は極めて高ぐ上記特許文献 1に記載さ れているようなリテーナリングでは、このような高い平面度を満たすことができない。す なわち、押圧面の表面粗さが最大高さで 0. 8 m程度では、研磨パッドの研磨面を 良好に（高いレベルにまで)平坦化、微細化することができず、このような研磨パッド によってゥエーハを研磨しても極めて高い平面度を得ることはできない。このため、実 際には、従来と同等の長時間の慣らし研磨を要することとなる。さらに、上記特許文 献 1に記載されている表面粗さの中で、最も小さい値は最大高さで 0. であり、 このような粗さ程度では、 0. 8 mの場合と同様、長時間の慣らし研磨を要すること に変わりはない。なお、上記特許文献 1において、押圧面の表面粗さを最大高さで 0 . 8 /z m以下にすることで、研磨レートと研磨レートの面内均一性が高まるとしている 力 研磨レートはゥエーハをどのくらいの速さ（mmZmin)で研磨できるかを示すに すぎず、ゥエーハを高 、平面度に研磨できることを示すものではな!/、。 [0006] However, the flatness required for wafers is extremely high. The retainer ring described in Patent Document 1 cannot satisfy such high flatness. In other words, when the surface roughness of the pressing surface is about 0.8 m at the maximum height, the polishing surface of the polishing pad cannot be satisfactorily flattened (to a high level) and miniaturized. Even if the wafer is polished with a polishing pad, extremely high flatness cannot be obtained. For this reason, in practice, a long-time break-in polishing equivalent to the conventional one is required. Further, among the surface roughnesses described in Patent Document 1 above, the smallest value is 0.8 at the maximum height. At such a roughness, the length is the same as in the case of 0.8 m. There is no change in the need for time break-in polishing. In Patent Document 1, the surface roughness of the pressing surface is set to 0.8 / zm or less at the maximum height, so that the in-plane uniformity of the polishing rate and the polishing rate is increased. It only shows how fast (mmZmin) can be polished, it does not indicate that wafers can be polished with high flatness! /.
[0007] さらに、 CMP装置によって研磨されるゥエーハの平面度は、リテーナリングの材質と その押圧面の表面粗さとによって左右される。すなわち、リテーナリングの材質とその 押圧面の表面粗さとを特定することで、ゥエーハを高い平面度に研磨することが可能 となる。しかしながら、上記特許文献 1にはリテーナリングの材質については記載され ておらず、どのような材質のリテーナリングに対して、その押圧面の表面粗さを最大高 さで 0. 8 m以下にすることで、慣らし研磨を不要にすることができるのか不明である [0007] Further, the flatness of the wafer polished by the CMP apparatus depends on the material of the retainer ring and the surface roughness of the pressing surface. That is, the wafer can be polished with high flatness by specifying the material of the retainer ring and the surface roughness of the pressing surface. However, the above Patent Document 1 describes the material of the retainer ring. It is not clear what kind of retainer ring is used, and it is possible to eliminate the need for break-in polishing by reducing the surface roughness of the pressing surface to a maximum height of 0.8 m or less.
[0008] 以上のように、上記特許文献 1に記載されているようなリテーナリングおよび開示内容 では、慣らし研磨を不要にできないことは勿論のこと、慣らし研磨に要する時間を最 小限に抑えることも実効的にできない。 [0008] As described above, in the retainer ring and the disclosed content described in Patent Document 1, it is possible to minimize the time required for the break-in polishing, as well as the need for the break-in polishing. Is also not effective.
[0009] そこで本発明は、慣らし研磨に要する時間を最小限に抑えることが実効的に可能なリ テーナリングおよび、その製造方法を提供することを目的とする。  Accordingly, an object of the present invention is to provide a retainer ring that can effectively minimize the time required for break-in polishing and a method for manufacturing the same.
課題を解決するための手段  Means for solving the problem
[0010] 上記目的を達成するために請求項 1に記載の発明は、定盤の上に配置された研磨 ノッドと、ゥエーハを保持して研磨パッドに押圧する保持ヘッドとを備え、ゥエーハを 化学機械的に研磨する CMP装置において、保持ヘッド内に配設され、リング状でゥ エーハの外周を囲うとともに、研磨パッドの研磨面を押圧する CMP装置用リテーナリ ングであって、エンジニアリングプラスチック材で構成され、研磨パッドの研磨面を押 圧する押圧面の表面粗さが中心線平均粗さ (算術平均粗さ）で 0. 01 μ m以下である ことを特徴としている。 In order to achieve the above object, the invention according to claim 1 includes a polishing node disposed on a surface plate, and a holding head that holds the wafer and presses the polishing pad against the polishing pad. In a CMP machine that mechanically polishes, it is a retainer ring for CMP equipment that is arranged in the holding head, surrounds the outer periphery of the wafer in a ring shape, and presses the polishing surface of the polishing pad. In addition, the surface roughness of the pressing surface for pressing the polishing surface of the polishing pad is characterized by a center line average roughness (arithmetic average roughness) of 0.01 μm or less.
[0011] 請求項 2に記載の発明は、請求項 1に記載の CMP装置用リテーナリングにおいて、 押圧面の背面に位置するリテーナリングの背面に被保持部が形成され、押圧面が研 磨加工されて!、ることを特徴として！/、る。  The invention according to claim 2 is the retainer ring for CMP apparatus according to claim 1, wherein a held portion is formed on the back surface of the retainer ring located on the back surface of the press surface, and the press surface is polished. Being featured! /
[0012] 請求項 3に記載の発明は、定盤の上に配置された研磨パッドと、ゥエーハを保持して 研磨パッドに押圧する保持ヘッドとを備え、ゥエーハをィ匕学機械的に研磨する CMP 装置において、保持ヘッド内に配設され、リング状でゥエーハの外周を囲うとともに、 研磨パッドの研磨面を押圧するエンジニアリングプラスチック製のリテーナリングの製 造方法であって、研磨パッドの研磨面を押圧する押圧面を除く形状面を所定の寸法 に加工した後に、リテーナリングに外周圧および内周圧をかけずにリテーナリングを 保持し、この状態で押圧面を機械加工し、さらにその表面粗さが中心線平均粗さで 0 . 01 μ m以下になるまで研磨カ卩ェすることを特徴としている。  The invention described in claim 3 includes a polishing pad disposed on a surface plate and a holding head that holds the wafer and presses it against the polishing pad, and mechanically polishes the wafer. In a CMP apparatus, a manufacturing method of an engineering plastic retainer ring that is disposed in a holding head, surrounds the outer periphery of a wafer in a ring shape, and presses the polishing surface of the polishing pad. After processing the shape surface excluding the pressing surface to be pressed to the specified dimensions, the retainer ring is held without applying the outer and inner pressures to the retainer ring, and the pressing surface is machined in this state, and the surface is roughened. Is characterized by polishing until the average roughness of the center line is 0.01 μm or less.
[0013] 請求項 4に記載の発明は、請求項 3に記載の CMP装置用リテーナリングの製造方法 において、定盤の上に配置された研磨パッドと、リテーナリングを回転させながらその 押圧面を研磨パッドに押圧する押圧出段と、研磨パッドにスラリを供給するスラリ供給 手段とを備え、押圧手段による押圧力および回転速度、スラリ供給手段によるスラリ 供給量が調整可能な研磨装置によって、研磨加工を行うことを特徴としている。 [0013] The invention described in claim 4 is a method of manufacturing a retainer ring for a CMP apparatus according to claim 3. A polishing pad disposed on the surface plate, a pressing step for pressing the pressing surface against the polishing pad while rotating the retainer ring, and a slurry supply means for supplying slurry to the polishing pad. The polishing process is performed by a polishing apparatus capable of adjusting the pressing force and rotational speed of the slurry and the amount of slurry supplied by the slurry supply means.
[0014] 請求項 5に記載の発明は、請求項 4に記載の CMP装置用リテーナリングの製造方法 において、研磨加工を行う前に、研磨装置に慣らし用リテーナリングを装着して慣らし 加工を行うことを特徴として 、る。  [0014] The invention according to claim 5 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 4, wherein the break-in process is performed by attaching the retainer ring for break-in to the polishing apparatus before performing the polishing process. It is characterized by that.
[0015] 請求項 6に記載の発明は、請求項 3から請求項 5のいずれか 1項に記載の CMP装置 用リテーナリングの製造方法において、押圧面の背面に位置するリテーナリングの背 面側のみを保持した状態で、機械加工と研磨加工とを行うことを特徴として ヽる。  [0015] The invention according to claim 6 is the manufacturing method of the retainer ring for a CMP apparatus according to any one of claims 3 to 5, wherein the back surface side of the retainer ring located on the back surface of the pressing surface It is characterized by carrying out machining and polishing while holding only this.
[0016] 請求項 7に記載の発明は、請求項 6に記載の CMP装置用リテーナリングの製造方法 において、リテーナリングの背面に被保持部を形成し、この被保持部を保持する保持 部を有する機械加工冶具によつてリテーナリングを保持し、この状態で機械加工を行 うことを特徴としている。  [0016] The invention according to claim 7 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 6, wherein a retained portion is formed on the back surface of the retainer ring, and the retained portion for retaining the retained portion is provided. It is characterized in that the retainer ring is held by the machine tool and the machine is machined in this state.
[0017] 請求項 8に記載の発明は、請求項 7に記載の CMP装置用リテーナリングの製造方法 にお 、て、保持部の背面に位置する機械加工冶具の背面側を支持する研磨加工冶 具によつて、リテーナリングを保持した機械加工冶具を支持し、この状態で研磨加工 を行うことを特徴としている。  [0017] The invention according to claim 8 is the method of manufacturing a retainer ring for a CMP apparatus according to claim 7, wherein the polishing machine tool for supporting the back side of the machining jig located on the back side of the holding portion is used. The tool is characterized in that the machining jig holding the retainer ring is supported and polishing is performed in this state.
[0018] 請求項 9に記載の発明は、請求項 7に記載の CMP装置用リテーナリングの製造方法 において使用される機械加工冶具であって、平盤状で、リテーナリングの背面と面接 触する取付面に、リテーナリングの背面に形成された被保持部を保持する保持部を 備えたことを特徴としている。  [0018] The invention described in claim 9 is a machining jig used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 7, and is a flat plate-like shape that comes into surface contact with the back surface of the retainer ring. The mounting surface includes a holding portion that holds a held portion formed on the back surface of the retainer ring.
[0019] 請求項 10に記載の発明は、請求項 8に記載の CMP装置用リテーナリングの製造方 法において使用される研磨加工冶具であって、平盤状で、取付面の背面に位置する 機械加工冶具の背面側を収容し、機械加工冶具の外周面に嵌合し機械加工冶具の 背面を支持する凹状の支持部を備えたことを特徴としている。  [0019] The invention according to claim 10 is a polishing tool used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 8, and is a flat plate-like shape and located on the back surface of the mounting surface. It is characterized in that it includes a concave support portion that accommodates the back side of the machining jig, fits to the outer peripheral surface of the machining jig, and supports the back side of the machining jig.
[0020] 請求項 11に記載の発明は、定盤の上に配置された研磨パッドと、ゥエーハを保持し て研磨パッドに押圧する保持ヘッドとを備え、この保持ヘッド内に、リング状でゥエー ハの外周を囲うとともに、研磨パッドの研磨面を押圧するリテーナリングが配設され、 ゥエーハをィ匕学機械的に研磨する CMP装置において、リテーナリングがエンジニア リングプラスチック材で構成され、研磨パッドの研磨面を押圧するリテーナリングの押 圧面の表面粗さが中心線平均粗さで 0. 01 μ m以下に設定されていることを特徴とし ている。 [0020] The invention according to claim 11 includes a polishing pad disposed on a surface plate and a holding head that holds the wafer and presses the wafer against the polishing pad, and a ring-like wafer is provided in the holding head. A retainer ring that surrounds the outer periphery of the wafer and presses the polishing surface of the polishing pad is arranged. In a CMP machine that polishes wafers mechanically mechanically, the retainer ring is made of an engineering plastic material, and the polishing pad It is characterized in that the surface roughness of the pressing surface of the retainer ring that presses the polished surface is set to 0.01 μm or less in terms of centerline average roughness.
発明の効果  The invention's effect
[0021] 請求項 1に記載の発明によれば、エンジニアリングプラスチック製のリテーナリングに おいて、その押圧面の表面粗さが中心線平均粗さで 0. 01 m以下になっているた め、慣ら LW磨に要する時間を最小限に抑えることが実効的に可能となる。すなわち 、リテーナリングの押圧面の表面粗さが 0. 01 m以下と極めて小さいため、リテーナ リングを CMP装置の保持ヘッドに装着した直後から、リテーナリングの押圧面によつ て研磨パッドの研磨面が良好に（高いレベルにまで)平坦化、微細化される。このた め、慣ら LW磨を行うことなぐあるいは短時間 (最小限)の慣らし研磨を行うことで、適 正な研磨性能を得ること、すなわちゥエーハを極めて高 、平面度に研磨することがで きる。この結果、慣ら LW磨に要する時間と労力とを最小限に抑え、ゥエーハの生産 稼働率を向上させることが実効的に可能となる。しかも、慣らし研磨に要する時間が 最小限ィ匕されるため、慣らし研磨による研磨屑が減少し、研磨屑によるゥエーハへの 力き傷 (スクラッチ)や不純物の付着などの発生率も減少する。この結果、ゥエーハの 生産品質が向上、安定化し、不良品低減によって生産性がさらに向上される。  [0021] According to the invention described in claim 1, in the engineering plastic retainer ring, the surface roughness of the pressing surface is not more than 0.01 m in center line average roughness. In practice it is possible to minimize the time required for LW polishing. That is, since the surface roughness of the pressing surface of the retainer ring is as extremely small as 0.01 m or less, immediately after the retainer ring is mounted on the holding head of the CMP apparatus, the polishing surface of the polishing pad is pressed by the pressing surface of the retainer ring. Is flattened and miniaturized well (to a high level). For this reason, it is possible to obtain an appropriate polishing performance without performing conventional LW polishing or performing short-term (minimum) running-in polishing, that is, polishing the wafer to extremely high flatness. wear. As a result, it is possible to effectively reduce the time and labor required for conventional LW polishing and improve the production capacity of wafers. In addition, since the time required for break-in polishing is minimized, polishing scraps due to break-in polishing are reduced, and the occurrence rate of scratches and adhesion of impurities to the wafer due to polishing scraps is also reduced. As a result, the production quality of wafers is improved and stabilized, and productivity is further improved by reducing defective products.
[0022] 請求項 2に記載の発明によれば、背面の被保持部を保持することで、押圧面を変形 させずにリテーナリングを保持することができるため、この保持状態で研磨加工を行う ことで、押圧面の表面粗さを極めて小さくすることが可能となる。  [0022] According to the invention described in claim 2, since the retainer ring can be held without deforming the pressing surface by holding the held portion on the back surface, polishing is performed in this holding state. Thus, the surface roughness of the pressing surface can be extremely reduced.
[0023] 請求項 3に記載の発明によれば、押圧面を除く形状面を所定の寸法に加工した後に 押圧面を機械加工および研磨加工 (ラッピング)するため、機械加工等された押圧面 がその後の加工によって変形されることがなぐし力も、外周圧および内周圧をかけ ずにリテーナリングを保持した状態で機械加工等するため、保持によって押圧面が 変形されることが防止される。さらに、機械加工 (切削加工や研削加工など）によって 押圧面の平面度と表面粗さとが、ある一定の大きさ（レベル）に達した後に研磨加工 を行うことで、研磨加工が良好に行える。そして、これらの結果として、押圧面を高い 平面度で、かつ極めて小さ!/、表面粗さに仕上げることが可能となる。 [0023] According to the invention of claim 3, since the pressing surface is machined and polished (lapping) after processing the shape surface excluding the pressing surface to a predetermined dimension, Since the shearing force that is not deformed by subsequent processing is machined or the like while holding the retainer ring without applying the outer peripheral pressure or the inner peripheral pressure, the pressing surface is prevented from being deformed by the holding. Furthermore, after the flatness and surface roughness of the pressing surface reach a certain level (level) by machining (such as cutting or grinding), polishing is performed. By performing this, polishing can be performed satisfactorily. As a result, the pressing surface can be finished with high flatness and extremely small surface roughness.
[0024] 請求項 4に記載の発明によれば、リテーナリングの材質や大きさ、スラリ (研磨材)の 種類などに応じて、押圧手段による押圧力や回転速度、スラリ供給量を調整すること で、リテーナリングの押圧面を高い平面度で、かつ極めて小さい表面粗さに研磨する ことが可能となる。  [0024] According to the invention described in claim 4, the pressing force, the rotational speed, and the slurry supply amount by the pressing means are adjusted according to the material and size of the retainer ring and the type of slurry (abrasive). Thus, the pressing surface of the retainer ring can be polished with high flatness and extremely small surface roughness.
[0025] 請求項 5に記載の発明によれば、慣らし加工を行うことで研磨装置の研磨パッド (クロ スなど）が適正化 (平坦化、微細化）、安定化され、その後の研磨加工において、リテ ーナリングの押圧面を良好に（高 、平面度で、かつ極めて小さ 、表面粗さに)加工す ることが可能となる。  [0025] According to the invention of claim 5, by performing the break-in process, the polishing pad (cross, etc.) of the polishing apparatus is optimized (flattened, miniaturized) and stabilized, and in the subsequent polishing process Therefore, it is possible to process the pressing surface of the retainer ring satisfactorily (with high, flatness and extremely small surface roughness).
[0026] 請求項 6に記載の発明によれば、リテーナリングの背面側のみを保持した状態で機 械加工と研磨加工とを行うため、保持によって押圧面が変形されることが防止され、 押圧面を良好に加工することが可能となる。  [0026] According to the invention of claim 6, since the mechanical processing and the polishing processing are performed with only the back side of the retainer ring held, the pressing surface is prevented from being deformed by the holding, The surface can be processed well.
[0027] 請求項 7に記載の発明によれば、リテーナリングの背面に形成された被保持部を保 持した状態で押圧面を機械加工するため、リテーナリングの保持によって押圧面が 変形されることが防止され、押圧面を良好に機械加工することが可能となる。  [0027] According to the invention of claim 7, the pressing surface is deformed by holding the retainer ring because the pressing surface is machined in a state where the held portion formed on the back surface of the retainer ring is held. This prevents the pressing surface from being satisfactorily machined.
[0028] 請求項 8に記載の発明によれば、リテーナリングを保持した機械加工冶具の背面側 を研磨加工冶具によつて支持するため、支持によってリテーナリングの押圧面が変形 されることが防止される。しカゝも、リテーナリングを機械加工冶具で保持したままで研 磨加工が行えるため、すなわち、リテーナリングを機械加工冶具力も取り外すことなく 機械加工と研磨加工とを連続して行えるため、機械加工冶具による保持精度、保持 の安定性が維持される。これらの結果、押圧面を良好に研磨加工することが可能とな る。  [0028] According to the invention of claim 8, since the back side of the machining jig holding the retainer ring is supported by the polishing jig, it is possible to prevent the pressing surface of the retainer ring from being deformed by the support. Is done. Since the retainer ring can be polished while being held by the machining jig, that is, the retainer ring can be continuously machined and polished without removing the machining jig force. The holding accuracy and holding stability by the jig are maintained. As a result, it is possible to satisfactorily polish the pressing surface.
[0029] 請求項 9に記載の発明によれば、リテーナリングの背面に形成された被保持部が機 械加工冶具によつて保持されるため、保持によってリテーナリングの押圧面が変形さ れることが防止される。し力も、リテーナリングの背面が機械加工冶具の取付面に面 接触した状態で、リテーナリングが機械加工冶具に保持されるため、機械加工時に おいてリテーナリングの押圧面が安定化される。これらの結果、押圧面を良好に機械 加工することが可能となる。 [0029] According to the invention described in claim 9, since the held portion formed on the back surface of the retainer ring is held by the machining jig, the pressing surface of the retainer ring is deformed by the holding. Is prevented. As for the holding force, the retainer ring is held by the machining jig while the back surface of the retainer ring is in surface contact with the mounting surface of the machining jig, so that the pressing surface of the retainer ring is stabilized during machining. As a result, the pressing surface is good It becomes possible to process.
[0030] 請求項 10に記載の発明によれば、リテーナリングを保持した機械加工冶具の背面側 が研磨加工冶具によつて支持されるため、支持によってリテーナリングの押圧面が変 形されることが防止される。し力も、支持部が機械加工冶具の外周面に嵌合するため 、機械加工冶具 (リテーナリング)の横ずれを防止し、かつ、機械加工冶具の背面 (リ テーナリングの背面）を支持するため、リテーナリングの押圧面に力かる加工力が適 正に支持され、研磨加工時において押圧面が安定ィ匕される。これらの結果、押圧面 を良好に研磨加工することが可能となる。  [0030] According to the invention described in claim 10, since the back side of the machining jig holding the retainer ring is supported by the polishing jig, the pressing surface of the retainer ring is deformed by the support. Is prevented. Since the support part fits on the outer peripheral surface of the machining jig, the lateral displacement of the machining jig (retainer ring) is prevented and the back surface of the machining jig (retainer ring back surface) is supported. The processing force applied to the pressing surface of the retainer ring is properly supported, and the pressing surface is stabilized during polishing. As a result, it is possible to satisfactorily polish the pressing surface.
[0031] 請求項 11に記載の発明によれば、リテーナリングの押圧面の表面粗さが中心線平均 粗さで 0. 01 m以下に設定されているため、慣ら LW磨に要する時間を最小限に 抑えることが実効的に可能となる。すなわち、リテーナリングの押圧面の表面粗さが 0 . 01 m以下と極めて小さいため、リテーナリングを保持ヘッドに装着した直後から、 押圧面によって研磨パッドの研磨面が良好に平坦化、微細化される。このため、慣ら し研磨を行うことなぐあるいは短時間の慣らし研磨を行うことで、適正な研磨性能が 得られる。この結果、慣らし研磨に要する時間と労力とを最小限に抑え、ゥエーハの 生産稼働率を向上させることが実効的に可能となる。  [0031] According to the invention of claim 11, since the surface roughness of the pressing surface of the retainer ring is set to 0.01 m or less in terms of the center line average roughness, the time required for LW polishing in general is reduced. It can effectively be minimized. That is, since the surface roughness of the pressing surface of the retainer ring is as extremely small as 0.01 m or less, the polishing surface of the polishing pad is satisfactorily flattened and refined by the pressing surface immediately after the retainer ring is mounted on the holding head. The For this reason, appropriate polishing performance can be obtained by performing break-in polishing for a short time without performing break-in polishing. As a result, it is possible to effectively reduce the time and labor required for break-in polishing and improve the production rate of wafers.
図面の簡単な説明  Brief Description of Drawings
[0032] [図 1]本発明の実施形態に係わる CMP装置の概略構成を示す正面図。 FIG. 1 is a front view showing a schematic configuration of a CMP apparatus according to an embodiment of the present invention.
[図 2]本発明の実施形態に係わる CMP装置の保持ヘッドの概略断面図。  FIG. 2 is a schematic cross-sectional view of a holding head of a CMP apparatus according to an embodiment of the present invention.
[図 3]本発明の実施形態に係わる CMP装置用リテーナリングの平面図（a)と側断面 図 (b)。  FIG. 3 is a plan view (a) and a side sectional view (b) of a retainer ring for a CMP apparatus according to an embodiment of the present invention.
[図 4]本発明の実施形態に係わる CMP装置用リテーナリングの製造工程フロー図。  FIG. 4 is a manufacturing process flow diagram of a CMP apparatus retainer ring according to an embodiment of the present invention.
[図 5]本発明の実施形態に係わる CMP装置用リテーナリングを研磨前加工 (機械カロ ェ)するための機械加工冶具の正面図（一部断面図)。  FIG. 5 is a front view (partially sectional view) of a machining jig for pre-polishing (mechanical caloring) the retainer ring for a CMP apparatus according to an embodiment of the present invention.
[図 6]本発明の実施形態に係わる CMP装置用リテーナリングを研磨加工するための 研磨加工冶具の断面図。  FIG. 6 is a cross-sectional view of a polishing jig for polishing a retainer ring for a CMP apparatus according to an embodiment of the present invention.
[図 7]本発明の実施形態に係わる CMP装置用リテーナリングの押圧面の表面粗さの 測定結果などを示す図。 圆 8]本発明の実施形態に係わる CMP装置用リテーナリングの押圧面の表面粗さの 測定ポイントを示す図。 FIG. 7 is a view showing measurement results of the surface roughness of the pressing surface of the retainer ring for CMP apparatus according to the embodiment of the present invention. 8] A diagram showing measurement points of the surface roughness of the pressing surface of the retainer ring for CMP apparatus according to the embodiment of the present invention.
圆 9]本発明の実施形態に係わる他の CMP装置用リテーナリングの押圧面の表面粗 さの測定結果を示す図。 9] A view showing the measurement result of the surface roughness of the pressing surface of the other retainer ring for CMP apparatus according to the embodiment of the present invention.
符号の説明 Explanation of symbols
1 CMP装置  1 CMP equipment
2 定盤  2 Surface plate
3 研磨パッド  3 Polishing pad
3a 研磨面  3a Polished surface
4 保持ヘッド  4 Holding head
5 スラリ供給ノズル (スラリ供給手段)  5 Slurry supply nozzle (slurry supply means)
5a スラリ  5a slurry
6 ドレッサー  6 Dresser
7 ヘッド本体  7 Head body
8 リテーナリング  8 Retainer ring
8a 押圧面  8a Press surface
8b スリット  8b slit
8c 背面  8c rear
8d ネジインサート (被保持部）  8d Screw insert (held part)
8e 雌ネジ  8e Female thread
9 弾性体膜  9 Elastic membrane
10 空気室  10 Air chamber
11 機械加工冶具  11 Machining jig
11a 取付面  11a Mounting surface
12 ボルト (保持部）  12 bolts (holding part)
13 研磨加工冶具  13 Polishing jig
13a 支持部  13a Support part
W ゥエーハ Wl 被研磨面 W Ueha Wl Surface to be polished
発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION
[0034] 以下、本発明を図示の実施形態に基づいて説明する。  Hereinafter, the present invention will be described based on the illustrated embodiments.
[0035] 図 1は、本発明の実施形態に係わる CMP装置 1の概略構成を示す正面図である。こ の CMP装置 1は、後述するリテーナリング 8を除き、広く一般に使用されている CMP 装置と同等の構成であり、ここでは詳細な説明を省略するが、回転可能な定盤 2と、 この定盤 2の上に配置された研磨パッド 3 (クロスなど）と、保持ヘッド 4と、スラリ供給ノ ズル 5 (スラリ供給手段)およびドレッサー 6 (目立て手段）とを備え、ゥエーハ Wをィ匕学 機械的に研磨するものである。  FIG. 1 is a front view showing a schematic configuration of a CMP apparatus 1 according to an embodiment of the present invention. The CMP apparatus 1 has the same configuration as the CMP apparatus that is widely used except for the retainer ring 8 described later, and a detailed description thereof is omitted here. Equipped with a polishing pad 3 (such as a cloth), a holding head 4, a slurry supply nozzle 5 (slurry supply means) and a dresser 6 (sharpening means) disposed on the board 2. Polishing.
[0036] 保持ヘッド 4は、ゥエーハ Wを保持してその被研磨面 W1を研磨パッド 3に押圧するも のであり、回転（自転)しならが研磨パッド 3上を移動できるようになつている。この保 持ヘッド 4は、図 2に示すように、ヘッド本体 7と、このヘッド本体 7の下部に配設され たリテーナリング 8と、このリテーナリング 8内に位置しゥエーハ Wの上面 W2を押圧す る弾性体膜 9とを備えている。そして、ヘッド本体 7とリテーナリング 8と弾性体膜 9とと によって囲まれた空気室 10に加圧用空気が供給され、弾性体膜 9を介してゥエーハ W研磨パッド 3に押圧するものである。  The holding head 4 holds the wafer W and presses the surface to be polished W1 against the polishing pad 3. The holding head 4 can move on the polishing pad 3 while rotating (spinning). As shown in FIG. 2, the holding head 4 includes a head main body 7, a retainer ring 8 disposed at a lower portion of the head main body 7, and an upper surface W2 of the wafer W positioned in the retainer ring 8. And an elastic body film 9. Pressurizing air is supplied to the air chamber 10 surrounded by the head body 7, the retainer ring 8, and the elastic body film 9, and is pressed against the wafer W polishing pad 3 through the elastic body film 9.
[0037] リテーナリング 8は、ゥエーハ Wの外周を囲いゥエーハ Wが保持ヘッド 4から飛び出す のを防止するとともに、研磨パッド 3の研磨面 3a (表面）を押圧し、ゥエーハ Wを研磨 する研磨パッド 3の研磨面 3a (ゥエーハ Wの被研磨面 Wlと面接触する部位）を平坦 ィ匕、微細化 (適正化)するものである。すなわち、研磨パッド 3の研磨面 3aは、スラリ（ 研磨材） 5aによって平面度が低ぐ表面粗さが粗くなつており、このような研磨面 3aを リテーナリング 8によって平面度を高くし、かつ表面粗さを小さくするものである。  [0037] The retainer ring 8 surrounds the outer periphery of the wafer W, prevents the wafer W from jumping out of the holding head 4, and presses the polishing surface 3a (surface) of the polishing pad 3 to polish the wafer W. The polishing surface 3a (the portion in contact with the polished surface Wl of wafer W) is flattened and refined (optimized). That is, the polishing surface 3a of the polishing pad 3 has a low surface roughness that is low in flatness due to the slurry (abrasive) 5a, and the polishing surface 3a is increased in flatness by the retainer ring 8, and The surface roughness is reduced.
[0038] このリテーナリング 8は、耐薬品性や機械的性質などを考慮して、 PPS (polyphenyl ene sulfide ;ポリフエ-レンサルファイド、エンジニアリングプラスチック）材で構成さ れ、図 3に示すようなリング状をしており、研磨パッド 3の研磨面 3aを押圧する押圧面 8aには、研磨屑を逃がす (排出する）溝状のスリット 8bが複数形成されている。また、 押圧面 8aの背面に位置するリテーナリング 8の背面 8cには、雌ネジ 8eが形成された ネジインサート 8d (被保持部）が複数挿入されている。すなわち、このネジインサート 8 dは略円筒形で、外周に雄ネジが形成され、内周に雌ネジ 8eが形成されているもの である。さらに、押圧面 8aの表面粗さが中心線平均粗さ（算術平均粗さ、 Ra)で 0. 0 1 IX m以下に設定 (研磨力卩ェ)されて 、るものである。 [0038] This retainer ring 8 is made of a PPS (polyphenylene sulfide, engineering plastic) material in consideration of chemical resistance and mechanical properties, and has a ring shape as shown in FIG. The pressing surface 8a that presses the polishing surface 3a of the polishing pad 3 is formed with a plurality of groove-shaped slits 8b that release (discharge) polishing debris. In addition, a plurality of screw inserts 8d (held portions) in which female screws 8e are formed are inserted into the back surface 8c of the retainer ring 8 positioned on the back surface of the pressing surface 8a. That is, this screw insert 8 d is a substantially cylindrical shape, with a male screw formed on the outer periphery and a female screw 8e formed on the inner periphery. Further, the surface roughness of the pressing surface 8a is set to a center line average roughness (arithmetic average roughness, Ra) of 0.01 IX m or less (polishing power).
[0039] 次に、このような構成のリテーナリング 8の製造方法を、図 4に示す工程フローに基づ いて説明する。 Next, a method for manufacturing the retainer ring 8 having such a configuration will be described based on the process flow shown in FIG.
[0040] まず、第 1工程として PPSの素材を荒切削加工し、最終形状および寸法に近い形状 とする。次に、背面 8c側をタップカ卩ェ (雌ネジ形成力卩ェ)し（工程 2)、そのタップにネ ジインサート 8dをねじ込む (挿入する、工程 3)。続いて、内径を所定の寸法に切削加 ェ (工程 4)した後に、リテーナリング 8の高さ (厚さ）が所定の寸法になるように押圧面 8a側と背面 8c側とを切削加工する（工程 5)。その後、外径を所定の寸法に切削加工 (工程 6)し、押圧面 8a側にスリット 8bを形成するためのフライス力卩ェを行う（工程 7)。 そして、これらの加工によって発生したバリを取り除き（工程 8)、背面 8c側を再度切 削加工する（工程 9)。このとき、背面 8c側の平面度が高くなるように、切削加工の切り 込みを小さくする。以上、工程 1から工程 9までによつて、押圧面 8aを除く形状面が所 定の寸法に加工される。  [0040] First, as a first step, the PPS material is roughly cut into a shape close to the final shape and dimensions. Next, the back face 8c side is tapped (internal thread forming force) (step 2), and the screw insert 8d is screwed into (inserted in, step 3). Subsequently, after cutting the inner diameter to a predetermined dimension (step 4), the pressing surface 8a side and the back surface 8c side are cut so that the height (thickness) of the retainer ring 8 has a predetermined dimension. (Process 5). Thereafter, the outer diameter is cut to a predetermined dimension (step 6), and a milling force is applied to form the slit 8b on the pressing surface 8a side (step 7). Then, burrs generated by these processes are removed (step 8), and the back surface 8c side is cut again (step 9). At this time, the cutting depth is reduced so that the flatness on the back surface 8c side is increased. As described above, the shape surface excluding the pressing surface 8a is processed to a predetermined dimension by the steps 1 to 9.
[0041] 続いて、図 5に示すような機械力卩ェ冶具 11を用いて、リテーナリング 8の押圧面 8aを 研磨前加工 (機械加工)する（工程 10)。この機械加工冶具 11はステンレス鋼製の円 盤 (平盤)で、その外径がリテーナリング 8の外径とほぼ同一寸法となっている。また、 リテーナリング 8のネジインサート 8dと同位置（同ピッチ）にボルト孔 11cが形成され、 このボルト孔 11cを介して、ボルト 12 (保持部）が背面 l ib側力 取付面 11a側に挿 入されているものである。そして、この機械力卩ェ冶具 11の取付面 11aにリテーナリン グ 8の背面 8cを面接触させ、ボルト 12をネジインサート 8dに締め付ける。これにより、 リテーナリング 8に外周圧および内周圧が力からずに、リテーナリング 8が機械力卩ェ冶 具 11によって保持される。次に、機械加工冶具 11の外周部を旋盤のチャックで把持 し、リテーナリング 8の押圧面 8aを旋盤にて平面切削加工する。このとき、押圧面 8a の平面度が高ぐかつ表面粗さが小さくなるように、切り込みを小さくし、かつ旋盤の 回転を小さくする。なお、本実施形態では、旋盤によって押圧面 8aを切削加工して いるが、リテーナリング 8の材質、硬さなどに応じて、研削加工などその他の機械カロェ を行ってもよい。 Subsequently, the pressing surface 8a of the retainer ring 8 is pre-polished (machined) using a mechanical force jig 11 as shown in FIG. 5 (step 10). The machining jig 11 is a stainless steel disk (flat plate), and its outer diameter is substantially the same as the outer diameter of the retainer ring 8. Also, a bolt hole 11c is formed at the same position (same pitch) as the screw insert 8d of the retainer ring 8, and the bolt 12 (holding portion) is inserted into the rear l ib side force mounting surface 11a side through this bolt hole 11c. It is what has been entered. Then, the rear surface 8c of the retaining ring 8 is brought into surface contact with the mounting surface 11a of the mechanical force jig 11, and the bolt 12 is fastened to the screw insert 8d. Thereby, the outer ring pressure and the inner ring pressure are not applied to the retainer ring 8, and the retainer ring 8 is held by the mechanical force jig 11. Next, the outer peripheral portion of the machining jig 11 is gripped by a lathe chuck, and the pressing surface 8a of the retainer ring 8 is plane-cut by the lathe. At this time, the cut is made small and the turning of the lathe is made small so that the flatness of the pressing surface 8a is high and the surface roughness is small. In this embodiment, the pressing surface 8a is cut by a lathe. However, depending on the material, hardness, etc. of the retainer ring 8, other machine calorie such as grinding is used. May be performed.
[0042] その後、機械力卩ェ冶具 11からリテーナリング 8を取り外さずに、図 6に示すような研磨 加工冶具 13を用いて、リテーナリング 8の押圧面 8aを研磨カ卩ェする（工程 11)。この 研磨加工冶具 13はポリ塩ィ匕ビュル製の円盤 (平盤)で、中央部に凹状の支持部 13a が形成されている。この支持部 13aの内径は、機械加工冶具 11の外径と同一寸法で 、機械力卩ェ冶具 11の外周面がぴったりと嵌合するようになつている。そして、この支 持部 13aに機械加工冶具 11の背面 l ib側を収容 (挿入)することで、機械加工冶具 11の背面 l ibが支持部 13aの底面 13bによって支持されるようになっている。なお、 この底面 13bには、機械力卩ェ冶具 11を保護するための保護クロス 14が配置されてい る。このような研磨力卩ェ冶具 13によって、リテーナリング 8を保持した機械力卩ェ冶具 1 1を支持した状態で、押圧面 8aを研磨加工する。  [0042] After that, without removing the retainer ring 8 from the mechanical force jig 11, the pressing surface 8a of the retainer ring 8 is polished with a polishing tool 13 as shown in FIG. 6 (step 11). ). The polishing tool 13 is a disk (flat plate) made of a polysalt cocoon bullet, and has a concave support portion 13a formed at the center. The inner diameter of the support portion 13a is the same as the outer diameter of the machining jig 11 so that the outer peripheral surface of the mechanical force jig 11 fits closely. Then, the back surface l ib side of the machining jig 11 is accommodated (inserted) in the support portion 13a, so that the back surface l ib of the machining jig 11 is supported by the bottom surface 13b of the support portion 13a. . A protective cloth 14 for protecting the mechanical force jig 11 is disposed on the bottom surface 13b. The pressing surface 8a is polished by such a polishing force jig 13 while the mechanical force jig 11 holding the retainer ring 8 is supported.
[0043] この研磨加工は、上記の CMP装置 1と同等の構成を有する研磨装置 (ラップ盤、ポリ ッシャ盤）によって行う。すなわち、この研磨装置は、定盤の上に配置された研磨パッ ド (研磨パッド 3と同等）と、リテーナリング 8を回転させながらその押圧面 8aを研磨パ ッドに押圧する押圧出段 (保持ヘッド 4と同等）と、研磨パッドにスラリを供給するスラリ 供給手段 (スラリ供給ノズル 5と同等）とを備え、押圧手段による押圧力および回転速 度、スラリ供給手段によるスラリ供給量などが調整可能となっている。そして、リテーナ リング 8の材質 (硬さなど)や大きさ、スラリ (研磨材)の種類などに応じて、押圧手段に よる押圧力や回転速度、スラリ供給量などの研磨条件を調整し、リテーナリング 8の押 圧面 8aを研磨加工する。具体的な研磨条件の一例を以下に示す。  This polishing process is performed by a polishing apparatus (lapping machine, polisher board) having the same configuration as the CMP apparatus 1 described above. That is, this polishing apparatus includes a polishing pad (equivalent to the polishing pad 3) disposed on the surface plate, and a pressing step for pressing the pressing surface 8a against the polishing pad while rotating the retainer ring 8 ( Equivalent to holding head 4) and slurry supply means (equivalent to slurry supply nozzle 5) for supplying slurry to the polishing pad, adjusting the pressing force and rotational speed by the pressing means, and the slurry supply amount by the slurry supplying means It is possible. Then, according to the material (hardness, etc.) and size of the retainer ring 8 and the type of slurry (abrasive), the polishing conditions such as the pressing force and rotational speed by the pressing means, the slurry supply amount, etc. are adjusted. The pressing surface 8a of the ring 8 is polished. An example of specific polishing conditions is shown below.
[0044] スラリ 5a ; CO (希釈剤はセリウム系）で、粒径が  [0044] Slurry 5a; CO (diluent is cerium) with particle size
スラジの供給量； 500〜1, OOOmlZ分  Sludge supply amount: 500 to 1, OOOmlZ
定盤温度； 24°C〜26°C (定盤の冷却水温度）  Surface plate temperature: 24 ° C to 26 ° C (cooling water temperature of the surface plate)
押圧手段による押圧力； 0. 2kgf/cm2 Pressing force by pressing means; 0.2 kgf / cm 2
押圧手段による回転速度； 50rpm  Rotational speed by pressing means: 50rpm
[0045] ところで、この研磨装置は、リテーナリング 8を研磨カ卩ェする前に、慣らし用リテーナリ ング (ダミーリテーナリング)を装着して慣らし力卩ェが行われ、この慣らし加工によって 、研磨装置の研磨パッドが適正化 (平坦化、微細化）、安定化されている。そして、こ の慣らしカ卩ェ後に、上記のような研磨条件にて、リテーナリング 8の押圧面 8aの表面 粗さ力 中心線平均粗さで 0. 01 m以下になるまで研磨カ卩ェする。 By the way, in this polishing apparatus, before the retainer ring 8 is polished, a break-in retainer ring (dummy retainer ring) is attached to perform a break-in force check. By this break-in process, the polishing apparatus The polishing pad is optimized (flattened, miniaturized) and stabilized. And this After the break-in, the surface is subjected to polishing under the above-described polishing conditions until the surface roughness force of the pressing surface 8a of the retainer ring 8 becomes 0.01 m or less in the center line average roughness.
[0046] この研磨加工後に、研磨屑をエアーブローで取り除いて、各部を測定し（工程 12)、 所定の寸法、表面粗さが得られたリテーナリング 8を超音波洗浄して（工程 13)、製造 工程を終了するものである。 [0046] After this polishing process, polishing debris is removed by air blow, each part is measured (step 12), and the retainer ring 8 having a predetermined size and surface roughness is ultrasonically cleaned (step 13). The manufacturing process is completed.
[0047] 次に、以上のような製造工程を経て製造されたリテーナリング 8の押圧面 8aの表面粗 さの測定結果について説明する。図 7はその測定結果を示すものであり、測定は次 の測定器および測定条件にて行った。また、測定ポイント A、 Bは、図 8に示す位置で ある。 [0047] Next, measurement results of the surface roughness of the pressing surface 8a of the retainer ring 8 manufactured through the manufacturing process as described above will be described. Figure 7 shows the measurement results, and the measurement was performed using the following measuring instruments and measurement conditions. Measurement points A and B are at the positions shown in FIG.
[0048] 測定器;株式会社ミツトヨ製 サーフテスト SV— 3000S4 (触針式表面粗さ測定機） 規格； OLDMIX  [0048] Measuring instrument; Mitutoyo Corporation Surf Test SV-3000S4 (stylus type surface roughness measuring instrument) Standard; OLDMIX
評価曲線種類; R  Evaluation curve type; R
基準長さ； 0. 8mm  Reference length: 0.8 mm
区関数; 5  Ward function; 5
(カットオフ値）； 0. 8mm  (Cut-off value); 0.8 mm
フイノレタ種類； Gaussian  Finale type; Gaussian
評価長さ； 4. Omm  Evaluation length; 4. Omm
助走； 0. 4mm  Run-up; 0.4 mm
後走； 0. 3985mm  Back run: 0.3985mm
スムース接続;才フ  Smooth connection;
パラメータ計算時の平均線補正;オフ  Average line correction during parameter calculation; off
[0049] 図 7中サンプル 1の値力 本リテーナリング 8の測定結果であり、測定ポイント A、 Bとも に、表面粗さが中心線平均粗さ (Ra)で 0. 010 μ mであった。また、最大高さ (Ry)で は、測定ポイント Aで 0. 080 μ m、測定ポイント Bで 0. 108 μ mであった。このように 、本リテーナリング 8の押圧面 8aの表面粗さは、上記特許文献 1に記載されているリ テーナリングの表面粗さ（最大高さで 0. 8 m程度）に比べて遥かに小さい。また、図 7中サンプル 2の値は、本リテーナリング 8と同様（同材、同寸法)のリテーナリングの 押圧面を人手にて研磨 (ポリツシュ、ラッピング)した場合の表面粗さの測定結果であ り、中心線平均粗さでは測定ポイント Aで 0. 220 m、測定ポイント Bで 0. 201 あり、最大高さでは、測定ポイント Aで 1. 776 μ m、測定ポイント Bで 1. 923 μ mであ つた。ところで、金属製品 (金属加工)の場合、表面粗さが中心線平均粗さで 0. 01 m以下であると鏡面状態であると言われ、本リテーナリング 8の押圧面 8aは表面粗さ が 0. 01 m以下であるため、金属製品における鏡面状態であると言える。なお、図 7中表面粗さ「Rq」は二乗平均平方根粗さ、「Rz」は十点平均粗さ、「Rc」は平均凹凸 高さ、「Rp」は最大山高さ、「Rv」は最大谷深さ、「Rt」は最大断面高さを示している。 [0049] Value of sample 1 in Fig. 7 This is the measurement result of this retainer ring 8. The surface roughness of both measurement points A and B was 0.010 μm in terms of centerline average roughness (Ra). . The maximum height (Ry) was 0.080 μm at measurement point A and 0.108 μm at measurement point B. Thus, the surface roughness of the pressing surface 8a of the retainer ring 8 is far greater than the surface roughness of the retainer ring described in Patent Document 1 (maximum height of about 0.8 m). small. The value of sample 2 in Fig. 7 is the measurement result of the surface roughness when the pressing surface of the retainer ring (same material, same dimensions) as this retainer ring 8 is manually polished (polished, lapped). Ah The center line average roughness is 0.220 m at measuring point A and 0.201 at measuring point B, and the maximum height is 1.776 μm at measuring point A and 1.923 μm at measuring point B. It was. By the way, in the case of a metal product (metal processing), if the surface roughness is 0.01 m or less in terms of the center line average roughness, it is said to be in a mirror surface state, and the pressing surface 8a of the retainer ring 8 has a surface roughness. Since it is less than 0.01 m, it can be said that it is a mirror surface state in metal products. In Fig. 7, the surface roughness "Rq" is the root mean square roughness, "Rz" is the ten-point average roughness, "Rc" is the average unevenness height, "Rp" is the maximum peak height, and "Rv" is the maximum. The valley depth, “Rt”, indicates the maximum cross-sectional height.
[0050] このように、本リテーナリング 8の押圧面 8aの表面粗さは、中心線平均粗さで 0. 01 μ m以下と極めて小さい。このため、 CMP装置に本リテーナリング 8を装着した際に、 慣らし研磨に要する時間を最小限に抑えることが実効的に可能となる。すなわち、押 圧面 8aの表面粗さが極めて小さいため、本リテーナリング 8を CMP装置 1の保持へッ ド 4に装着した直後から、押圧面 8aによって研磨パッド 3の研磨面 3aが良好に（高い レベルにまで)平坦化、微細化される。このため、慣らし研磨を行うことなぐあるいは 短時間 (最小限)の慣らし研磨を行うことで、適正な研磨性能を得ること、すなわちゥ エーノ、 Wの被研磨面 W1を極めて高い平面度に研磨することができる。この結果、慣 らし研磨に要する時間と労力とを最小限に抑え、ゥエーハ Wの生産稼働率を向上さ せることが実効的に可能となる。  [0050] As described above, the surface roughness of the pressing surface 8a of the retainer ring 8 is extremely small as 0.01 μm or less in terms of centerline average roughness. For this reason, when the retainer ring 8 is attached to the CMP apparatus, it is possible to effectively minimize the time required for break-in polishing. That is, since the surface roughness of the pressing surface 8a is extremely small, immediately after the retainer ring 8 is mounted on the holding head 4 of the CMP apparatus 1, the polishing surface 3a of the polishing pad 3 is satisfactorily (high) by the pressing surface 8a. Flattened and refined). For this reason, it is possible to obtain an appropriate polishing performance by performing the running-in polishing for a short time (minimum) without performing the running-in polishing, that is, polishing the surface to be polished W1 and W to extremely high flatness. be able to. As a result, it is possible to effectively improve the production operation rate of wafer W while minimizing the time and labor required for break-in.
[0051] 例えば、押圧面の表面粗さが大きい従来のリテーナリングでは、製品ゥエーハ W (製 品として生産されるゥエーハ)の研磨を開始する前に、外段取り作業と慣らし研磨とを 要していた。すなわち、外段取り作業では、リテーナリングを専用の研磨装置 (ポリツ シャ盤)で約 10分間荒削りした後に、別の専用の研磨装置で約 15分間仕上げ研磨 し、約 20分間超音波洗浄する。そして、慣らし研磨では、リテーナリングを保持ヘッド 4に装着し、 20枚以上のダミーゥエーハ (慣らし用ゥエーハ）を研磨して、適正な研磨 性能が得られたことを確認しなければならな力つた。これに対し、本リテーナリング 8で は、押圧面 8aの表面粗さが極めて小さいために、外段取り作業を行う必要がない。さ らに、 CMP装置 1の加工精度、研磨パッド 3の種類や状態（平面度など)などによつ て多少異なるが、本リテーナリング 8を保持ヘッド 4に装着した直後に、慣ら LW磨を 行うことなく、あるいは数分の慣らし研磨を行うことで、ゥエーハ Wの被研磨面 W1を 極めて高い平面度に研磨することができる。なお、従来のリテーナリングの押圧面は 、例えば、旋盤によって切削加工されるのみであり、その表面粗さは中心線平均粗さ で 3. 0 m程度である。 [0051] For example, in the conventional retainer ring having a large pressing surface, the outer surface work-in and the break-in polishing are required before starting the polishing of the product wafer W (wafer produced as a product). It was. In other words, in the external setup work, the retainer ring is roughly ground for about 10 minutes with a dedicated polishing machine (poly polisher), then finish-polished for about 15 minutes with another dedicated polishing machine and ultrasonically cleaned for about 20 minutes. In the break-in polishing, the retainer ring was attached to the holding head 4 and 20 or more dummy wafers (break-in wafers) were polished to confirm that proper polishing performance was obtained. On the other hand, in the present retainer ring 8, since the surface roughness of the pressing surface 8a is extremely small, it is not necessary to perform an external setup operation. Further, although slightly different depending on the processing accuracy of the CMP apparatus 1 and the type and condition of the polishing pad 3 (flatness, etc.), immediately after the retainer ring 8 is mounted on the holding head 4, it is generally used for LW polishing. The surface to be polished W1 of Wafer W It can be polished to extremely high flatness. The pressing surface of the conventional retainer ring is only cut by, for example, a lathe, and the surface roughness is about 3.0 m as the center line average roughness.
[0052] また、慣らし研磨に要する時間が最小限化されるため、慣らし研磨による研磨屑が減 少し、研磨屑によるゥエーハ Wへの力き傷 (スクラッチ）や不純物の付着などの発生 率も減少する。この結果、ゥエーハ Wの生産品質が向上、安定化し、不良品低減に よって生産性がさらに向上される。  [0052] In addition, since the time required for break-in polishing is minimized, polishing scraps due to break-in polishing are reduced, and the occurrence rate of scratches and impurities attached to wafer W due to polishing scraps is also reduced. To do. As a result, the production quality of wafer W is improved and stabilized, and the productivity is further improved by reducing defective products.
[0053] ところで、本リテーナリング 8の押圧面 8aの表面粗さ力 中心線平均粗さで 0. 01 m 以下と極めて小さいのは、上記のような製造工程を経ているからである。すなわち、ま ず、工程 1から工程 9までによつて、押圧面 8aを除く形状面を所定の寸法に加工した 後に、押圧面 8aを研磨前加工（工程 10)および研磨加工（工程 11)するため、加工 後の押圧面 8aが変形することがない。つまり、押圧面 8aを所定の寸法などに加工し た後に他の形状面を加工すると、押圧面 8aが変形してしまい、寸法などが変わる場 合があるが、上記のような工程では、そのようなことがない。  By the way, the reason why the surface roughness force and the center line average roughness of the pressing surface 8a of the retainer ring 8 is as small as 0.01 m or less is that the manufacturing process as described above has been performed. That is, first, after the shape surface excluding the pressing surface 8a is processed to a predetermined size in steps 1 to 9, the pressing surface 8a is subjected to pre-polishing processing (step 10) and polishing processing (step 11). Therefore, the processed pressing surface 8a is not deformed. In other words, if another shape surface is processed after processing the pressing surface 8a to a predetermined dimension, the pressing surface 8a may be deformed and the dimensions may change. There is no such thing.
[0054] さらに、リテーナリング 8に外周圧および内周圧をかけずにリテーナリング 8を保持し た状態で研磨前加工および研磨加工するため、保持によって押圧面 8aが変形され ることが防止される。すなわち、研磨前加工（工程 10)において、機械加工冶具 11の ボルト 12をリテーナリング 8のネジインサート 8dに締め付けることで、リテーナリング 8 が機械加工冶具 11に保持されるため、この保持によって押圧面 8aが変形されること がない。し力も、リテーナリング 8の背面 8cが機械力卩ェ冶具 11の取付面 11aによって 支持されるため、研磨前カ卩ェ時においてリテーナリング 8の押圧面 8aが安定ィ匕される 。この結果、押圧面 8aが良好に（高い平面度で、かつ小さい表面粗さに)研磨前カロ ェされる。そして、この研磨前加工によって押圧面 8aの平面度と表面粗さとが、ある 一定の大きさ（レベル）に達した後に研磨加工を行うことで、押圧面 8aを高い平面度 で、かつ極めて小さい表面粗さに仕上げる (研磨する）ことが可能となる。  [0054] Further, since the pre-polishing process and the polishing process are performed in a state where the retainer ring 8 is held without applying an outer peripheral pressure and an inner peripheral pressure to the retainer ring 8, the pressing surface 8a is prevented from being deformed by the holding. The That is, in the pre-polishing process (step 10), the bolt 12 of the machining jig 11 is fastened to the screw insert 8d of the retainer ring 8 so that the retainer ring 8 is held by the machining jig 11, and this holding causes the pressing surface. 8a is not deformed. Also, since the back surface 8c of the retainer ring 8 is supported by the mounting surface 11a of the mechanical force jig 11, the pressing surface 8a of the retainer ring 8 is stabilized during the pre-polishing caulking. As a result, the pressing surface 8a is subjected to good caloring before polishing (high flatness and small surface roughness). Then, the pressing surface 8a has a high degree of flatness and is extremely small by performing polishing after the flatness and surface roughness of the pressing surface 8a reach a certain level (level) by this pre-polishing processing. It becomes possible to finish the surface roughness (polishing).
[0055] また、続く研磨加工 (工程 11)において、リテーナリング 8を保持した機械加工冶具 1 1の背面 l ib側を研磨力卩ェ冶具 13によって支持するため、この支持によってリテー ナリング 8の押圧面 8aが変形されることがない。し力も、研磨加工冶具 13の支持部 1 3aが機械加工冶具 11の外周面に嵌合するため、機械力卩ェ冶具 11 (リテーナリング 8 )の横ずれが防止される。また、支持部 13aの底面 13bによって機械力卩ェ冶具 11の 背面 1 lb (リテーナリング 8の背面 8c)が支持されるため、リテーナリング 8の押圧面 8a にかかる加工力（研磨力）が適正に支持され、研磨加工時において押圧面 8aが安定 ィ匕される。さら〖こ、リテーナリング 8を機械加工冶具 11で保持したままで研磨加工を行 うため、すなわち、リテーナリング 8を機械力卩ェ冶具 11から取り外すことなく研磨前カロ ェと研磨加工とを連続して行うため、機械加工冶具 11による保持精度、保持の安定 性が維持される。そして、これらの結果、押圧面 8aを高い平面度で、かつ極めて小さ V、表面粗さに研磨加工することが可能となる。 [0055] Further, in the subsequent polishing process (step 11), the back surface l ib side of the machining jig 11 holding the retainer ring 8 is supported by the polishing force jig 13, so that the retainer ring 8 is pressed by this support. Surface 8a is not deformed. Support force of polishing jig 13 Since 3a is fitted to the outer peripheral surface of the machining jig 11, the lateral displacement of the mechanical force jig 11 (retainer ring 8) is prevented. In addition, since the back surface 1 lb of the mechanical force jig 11 (the back surface 8c of the retainer ring 8) is supported by the bottom surface 13b of the support portion 13a, the processing force (polishing power) applied to the pressing surface 8a of the retainer ring 8 is appropriate. The pressing surface 8a is stabilized during polishing. In order to perform polishing while holding the retainer ring 8 with the machining jig 11, that is, without removing the retainer ring 8 from the mechanical force jig 11, the pre-polishing calorie and the polishing process are continuously performed. Therefore, the holding accuracy and holding stability by the machining jig 11 are maintained. As a result, the pressing surface 8a can be polished to a high flatness, an extremely small V, and a surface roughness.
[0056] さらには、研磨カ卩ェにおいて、上記のように、リテーナリング 8の材質や大きさ、スラリ 5aの種類などに応じて、押圧手段による押圧力や回転速度、スラリ供給量などが調 整されるため、リテーナリング 8の押圧面 8aを高い平面度で、かつ極めて小さい表面 粗さに研磨することが可能となる。し力も、リテーナリング 8を研磨加工する前に、慣ら し用リテーナリングによる慣らし力卩ェを行うため、この慣らしカ卩ェによって研磨装置の 研磨パッドが適正化 (平坦化、微細化）、安定化される。そして、この慣らし加工後に 、リテーナリング 8の押圧面 8aを研磨するため、押圧面 8aを良好に（高い平面度で、 かつ極めて小さ 、表面粗さに)加工することが可能となる。  [0056] Furthermore, in the polishing case, as described above, the pressing force and rotational speed by the pressing means, the amount of slurry supply, etc. are adjusted according to the material and size of the retainer ring 8 and the type of the slurry 5a. Therefore, the pressing surface 8a of the retainer ring 8 can be polished with high flatness and extremely small surface roughness. Before the retainer ring 8 is polished, the break-in force due to the break-in retainer ring is applied, and this break-in force optimizes the polishing pad of the polishing apparatus (flattening, miniaturization) Stabilized. Then, since the pressing surface 8a of the retainer ring 8 is polished after the break-in processing, the pressing surface 8a can be processed satisfactorily (with high flatness and extremely small surface roughness).
[0057] そして、以上の結果として、テーナリング 8の押圧面 8aの表面粗さを、中心線平均粗 さで 0. 01 m以下という極めて小さい値に研磨する（仕上げる）ことができるものであ る。  [0057] As a result of the above, the surface roughness of the pressing surface 8a of the tener ring 8 can be polished (finished) to an extremely small value of 0.01 m or less in the center line average roughness. The
[0058] ところで、本実施形態では、リテーナリング 8が PPS製である力 PEEK (polyether etherketone；ポリエーテルエーテルケトン)、 PET (polyethylene terephthalate ；ポリエチレンテレフタレート）、 POM (polyacetals；ポリアセタール）、 PI (polyimide ；ポリイミド）など、その他のエンジニアリングプラスチック製であっても、本リテーナリン グ 8と同様に、押圧面の表面粗さを中心線平均粗さで 0. 01 m以下にすることがで きる。例えば、 PEEK材でリテーナリングを構成し、上記と同様の製造工程を経た押 圧面の表面粗さを測定した結果を、図 7にサンプル 3として示す。この結果、測定ボイ ント A、 Bともに、表面粗さが中心線平均粗さで 0. 009 mであり、最大高さでは、測 定ポイント Aで 0. 076 μ m、測定ポイント Bで 0. 074 μ mであった。このように、 PPS 製の本リテーナリング 8に比べて、 PEEK製のリテーナリングの方が表面粗さがやや 小さいのは、 PPS材に比べて PEEK材の硬度がやや高い（硬い）力もである。なお、 図 7中サンプル 4の値は、 PEEK製のリテーナリングの押圧面を人手にて研磨した場 合の表面粗さの測定結果である。 By the way, in the present embodiment, the retainer ring 8 is made of PPS. PEEK (polyether etherketone), PET (polyethylene terephthalate), POM (polyacetals), PI (polyimide; Even with other engineering plastics such as (polyimide), the surface roughness of the pressing surface can be reduced to 0.01 m or less in terms of the center line average roughness, as in this retaining ring8. For example, Fig. 7 shows the result of measuring the surface roughness of the pressing surface after forming the retainer ring with PEEK material and performing the same manufacturing process as above. As a result, for both measurement points A and B, the surface roughness was 0.009 m in centerline average roughness, and at the maximum height, The fixed point A was 0.076 μm and the measurement point B was 0.074 μm. In this way, the surface roughness of the PEEK retainer ring is slightly smaller than that of the main PPS retainer ring 8, and the hardness of the PEEK material is slightly higher (hard) than the PPS material. . The value of sample 4 in Fig. 7 is the measurement result of the surface roughness when the pressing surface of the retainer ring made of PEEK is polished manually.
[0059] また、粒径が小さ 、スラリによって押圧面を研磨加工することで、押圧面の表面粗さ をさらに小さくすることができる。例えば、 PPS製のリテーナリングの押圧面を、 1. 2 μ mのスラリで研磨カ卩ェした場合、図 9に示すように、さらに小さい表面粗さが得られた 。例えば、中心線平均粗さでは、測定ポイント Aで 0. 004 μ m,測定ポイント Bで 0. 0 05 μ mであり、最大高さでは、測定ポイント Aで 0. 049 μ m、測定ポイント Bで 0. 05 l /z mであった。このように、リテーナリングの材質や硬さなどに応じてスラリの粒径を 小さくすることで、押圧面の表面粗さをさらに小さくすることが可能となる。なお、図 9 中、測定ポイント C、 D、 Eは、図 8に示す測定位置である。 [0059] Further, the surface roughness of the pressing surface can be further reduced by polishing the pressing surface with a slurry having a small particle diameter. For example, when the pressing surface of a retainer ring made of PPS was polished with a 1.2 μm slurry, a smaller surface roughness was obtained as shown in FIG. For example, the center line average roughness is 0.004 μm at measurement point A and 0.0 05 μm at measurement point B, and 0.049 μm at measurement point A and measurement point B at the maximum height. It was 0.05 a l / zm. Thus, the surface roughness of the pressing surface can be further reduced by reducing the particle size of the slurry according to the material and hardness of the retainer ring. In FIG. 9, measurement points C, D, and E are the measurement positions shown in FIG.
産業上の利用可能性  Industrial applicability
[0060] 以上のように、本発明に係わる CMP装置用リテーナリングは、慣らし研磨に要する時 間を最小限に抑えることができ、かつ、ゥエーハの生産品質を向上、安定化させるこ とができるリテーナリングとして極めて有用である。 [0060] As described above, the CMP apparatus retainer ring according to the present invention can minimize the time required for break-in polishing, and can improve and stabilize wafer production quality. It is extremely useful as a retainer ring.

Claims

請求の範囲 The scope of the claims
[1] 定盤の上に配置された研磨パッドと、ゥエーハを保持して前記研磨パッドに押圧す る保持ヘッドとを備え、前記ゥエーハをィ匕学機械的に研磨する CMP装置において、 前記保持ヘッド内に配設され、リング状で前記ゥエーハの外周を囲うとともに、前記 研磨パッドの研磨面を押圧する CMP装置用リテーナリングであって、  [1] A CMP apparatus that includes a polishing pad disposed on a surface plate and a holding head that holds a wafer and presses the wafer against the polishing pad, and mechanically polishes the wafer. A retainer ring for a CMP apparatus that is disposed in the head, surrounds the outer periphery of the wafer in a ring shape, and presses the polishing surface of the polishing pad,
エンジニアリングプラスチック材で構成され、前記研磨パッドの研磨面を押圧する押 圧面の表面粗さが中心線平均粗さで 0. 01 μ m以下である、  It is made of engineering plastic material, and the surface roughness of the pressing surface that presses the polishing surface of the polishing pad is 0.01 μm or less in terms of centerline average roughness.
ことを特徴とする CMP装置用リテーナリング。  Retainer ring for CMP equipment.
[2] 前記押圧面の背面に位置する前記リテーナリングの背面に被保持部が形成され、 前記押圧面が研磨加工されて！ヽる、  [2] A held portion is formed on the back surface of the retainer ring located on the back surface of the pressing surface, and the pressing surface is polished! Speak
ことを特徴とする請求項 1に記載の CMP装置用リテーナリング。  The retainer ring for a CMP apparatus according to claim 1, wherein:
[3] 定盤の上に配置された研磨パッドと、ゥエーハを保持して前記研磨パッドに押圧する 保持ヘッドとを備え、前記ゥエーハを化学機械的に研磨する CMP装置において、前 記保持ヘッド内に配設され、リング状で前記ゥエーハの外周を囲うとともに、前記研 磨パッドの研磨面を押圧するエンジニアリングプラスチック製のリテーナリングの製造 方法であって、 [3] In a CMP apparatus that comprises a polishing pad disposed on a surface plate and a holding head that holds and presses a wafer against the polishing pad, and chemically and mechanically polishes the wafer, A retainer ring made of engineering plastic that surrounds the outer periphery of the wafer in a ring shape and presses the polishing surface of the polishing pad,
前記研磨パッドの研磨面を押圧する押圧面を除く形状面を所定の寸法に加工した 後に、  After processing the shape surface excluding the pressing surface that presses the polishing surface of the polishing pad into a predetermined dimension,
前記リテーナリングに外周圧および内周圧をかけずに前記リテーナリングを保持し、 この状態で前記押圧面を機械加工し、さらにその表面粗さが中心線平均粗さで 0. 0 1 μ m以下になるまで研磨カ卩ェする、  The retainer ring is held without applying an outer peripheral pressure and an inner peripheral pressure to the retainer ring, and the pressing surface is machined in this state, and the surface roughness is a center line average roughness of 0.0 1 μm. Polish until it is below
ことを特徴とする CMP装置用リテーナリングの製造方法。  A method of manufacturing a retainer ring for a CMP apparatus.
[4] 定盤の上に配置された研磨パッドと、前記リテーナリングを回転させながらその押圧 面を前記研磨パッドに押圧する押圧出段と、前記研磨パッドにスラリを供給するスラリ 供給手段とを備え、前記押圧手段による押圧力および回転速度、前記スラリ供給手 段によるスラリ供給量が調整可能な研磨装置によって、前記研磨加工を行う、 ことを特徴とする請求項 3に記載の CMP装置用リテーナリングの製造方法。  [4] A polishing pad disposed on a surface plate, a pressing step for pressing the pressing surface against the polishing pad while rotating the retainer ring, and a slurry supply means for supplying slurry to the polishing pad The CMP apparatus retainer according to claim 3, further comprising: a polishing apparatus capable of adjusting a pressing force and a rotation speed by the pressing means and a slurry supply amount by the slurry supply means. Ring manufacturing method.
[5] 前記研磨加工を行う前に、前記研磨装置に慣らし用リテーナリングを装着して慣ら し加工を行う、 [5] Before carrying out the polishing process, a break-in retainer ring is attached to the polishing apparatus. Processing
ことを特徴とする請求項 4に記載の CMP装置用リテーナリングの製造方法。  The method for manufacturing a retainer ring for a CMP apparatus according to claim 4, wherein:
[6] 前記押圧面の背面に位置する前記リテーナリングの背面側のみを保持した状態で 、前記機械加工と研磨加工とを行う、 [6] In the state where only the back side of the retainer ring located on the back side of the pressing surface is held, the machining and polishing are performed.
ことを特徴とする請求項 3から請求項 5のいずれか 1項に記載の CMP装置用リテー ナリングの製造方法。  The method for manufacturing a retainer ring for a CMP apparatus according to any one of claims 3 to 5, wherein:
[7] 前記リテーナリングの背面に被保持部を形成し、この被保持部を保持する保持部を 有する機械加工冶具によつて前記リテーナリングを保持し、この状態で前記機械カロ ェを行う、  [7] A retained portion is formed on the back surface of the retainer ring, the retainer ring is retained by a machining jig having a retaining portion that retains the retained portion, and the machine calorie is performed in this state.
ことを特徴とする請求項 6に記載の CMP装置用リテーナリングの製造方法。  The method for manufacturing a retainer ring for a CMP apparatus according to claim 6.
[8] 前記保持部の背面に位置する前記機械加工冶具の背面側を支持する研磨加工冶 具によつて、前記リテーナリングを保持した前記機械加工冶具を支持し、この状態で 前記研磨加工を行う、 [8] The polishing jig that holds the retainer ring is supported by a polishing jig that supports the back side of the machining jig located on the back surface of the holding portion, and the polishing process is performed in this state. Do,
ことを特徴とする請求項 7に記載の CMP装置用リテーナリングの製造方法。  The method for manufacturing a retainer ring for a CMP apparatus according to claim 7.
[9] 請求項 7に記載の CMP装置用リテーナリングの製造方法において使用される前記 機械加工冶具であって、 [9] The machining jig used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 7,
平盤状で、前記リテーナリングの背面と面接触する取付面に、前記リテーナリングの 背面に形成された被保持部を保持する保持部を備えた、  A holding plate for holding a held portion formed on the back surface of the retainer ring on a mounting surface that is in a flat plate shape and is in surface contact with the back surface of the retainer ring.
ことを特徴とする CMP装置用リテーナリングの機械加工冶具。  A mechanical jig for retainer rings for CMP equipment.
[10] 請求項 8に記載の CMP装置用リテーナリングの製造方法において使用される前記 研磨加工冶具であって、 [10] The polishing jig used in the method for manufacturing a retainer ring for a CMP apparatus according to claim 8,
平盤状で、前記取付面の背面に位置する前記機械加工冶具の背面側を収容し、前 記機械加工冶具の外周面に嵌合し前記機械加工冶具の背面を支持する凹状の支 持部を備えた、  A flat support that accommodates the back side of the machining jig located on the back side of the mounting surface, fits on the outer peripheral surface of the machining jig and supports the back side of the machining jig. With
ことを特徴とする CMP装置用リテーナリングの研磨力卩ェ冶具。  A polishing tool for retainer rings for CMP equipment.
[11] 定盤の上に配置された研磨パッドと、ゥエーハを保持して前記研磨パッドに押圧す る保持ヘッドとを備え、この保持ヘッド内に、リング状で前記ゥエーハの外周を囲うとと もに、前記研磨パッドの研磨面を押圧するリテーナリングが配設され、前記ゥエーハ を化学機械的に研磨する CMP装置において、 [11] A polishing pad disposed on a surface plate and a holding head that holds and presses the wafer against the polishing pad, and encloses the outer periphery of the wafer in a ring shape in the holding head. In addition, a retainer ring for pressing the polishing surface of the polishing pad is disposed, and the wafer is In chemical mechanical polishing CMP equipment,
前記リテーナリングがエンジニアリングプラスチック材で構成され、前記研磨パッド の研磨面を押圧する前記リテーナリングの押圧面の表面粗さが中心線平均粗さで 0 . 01 i m以下に設定されている、  The retainer ring is made of an engineering plastic material, and the pressing surface of the retainer ring that presses the polishing surface of the polishing pad has a center line average roughness set to 0.01 im or less,
ことを特徴とする CMP装置。 A CMP apparatus characterized by that.
PCT/JP2005/007067 2005-04-12 2005-04-12 Retainer ring for cmp device, method of manufacturing the same, and cmp device WO2006114854A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
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JP2016178304A (en) * 2015-03-19 2016-10-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Retaining ring for lower wafer defects
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US20070298693A1 (en) 2007-12-27
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