WO2006098268A1 - 導電性粒子を用いたフリップチップ実装方法およびバンプ形成方法 - Google Patents
導電性粒子を用いたフリップチップ実装方法およびバンプ形成方法 Download PDFInfo
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- WO2006098268A1 WO2006098268A1 PCT/JP2006/304891 JP2006304891W WO2006098268A1 WO 2006098268 A1 WO2006098268 A1 WO 2006098268A1 JP 2006304891 W JP2006304891 W JP 2006304891W WO 2006098268 A1 WO2006098268 A1 WO 2006098268A1
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- Prior art keywords
- resin
- electronic component
- electrode
- composition
- chip mounting
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- 238000000034 method Methods 0.000 title claims abstract description 132
- 229910000679 solder Inorganic materials 0.000 claims abstract description 130
- 229920005989 resin Polymers 0.000 claims abstract description 125
- 239000011347 resin Substances 0.000 claims abstract description 125
- 239000000843 powder Substances 0.000 claims abstract description 79
- 239000000203 mixture Substances 0.000 claims abstract description 74
- 239000000654 additive Substances 0.000 claims abstract description 31
- 230000000996 additive effect Effects 0.000 claims abstract description 28
- 238000009835 boiling Methods 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 118
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000003795 chemical substances by application Substances 0.000 claims description 38
- -1 dosonite Chemical compound 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 16
- 239000002923 metal particle Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 239000004743 Polypropylene Substances 0.000 claims description 11
- 229920001155 polypropylene Polymers 0.000 claims description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000009719 polyimide resin Substances 0.000 claims description 9
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 8
- 229920000180 alkyd Polymers 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229920006122 polyamide resin Polymers 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229920006337 unsaturated polyester resin Polymers 0.000 claims description 7
- 239000005062 Polybutadiene Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229920002857 polybutadiene Polymers 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000003921 oil Substances 0.000 claims description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 4
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 claims description 4
- 229920002050 silicone resin Polymers 0.000 claims description 4
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 4
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 claims description 3
- QBLDFAIABQKINO-UHFFFAOYSA-N barium borate Chemical compound [Ba+2].[O-]B=O.[O-]B=O QBLDFAIABQKINO-UHFFFAOYSA-N 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 3
- 229950011008 tetrachloroethylene Drugs 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 229920000299 Nylon 12 Polymers 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 239000000155 melt Substances 0.000 abstract description 4
- 230000010485 coping Effects 0.000 abstract 1
- 238000000280 densification Methods 0.000 abstract 1
- 238000001338 self-assembly Methods 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 12
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 12
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910017944 Ag—Cu Inorganic materials 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 238000000113 differential scanning calorimetry Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 229910020220 Pb—Sn Inorganic materials 0.000 description 4
- 229910020994 Sn-Zn Inorganic materials 0.000 description 4
- 229910009069 Sn—Zn Inorganic materials 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 229940035429 isobutyl alcohol Drugs 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910020836 Sn-Ag Inorganic materials 0.000 description 3
- 229910020935 Sn-Sb Inorganic materials 0.000 description 3
- 229910020988 Sn—Ag Inorganic materials 0.000 description 3
- 229910008757 Sn—Sb Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 238000001938 differential scanning calorimetry curve Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 229930182556 Polyacetal Natural products 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- VCNTUJWBXWAWEJ-UHFFFAOYSA-J aluminum;sodium;dicarbonate Chemical compound [Na+].[Al+3].[O-]C([O-])=O.[O-]C([O-])=O VCNTUJWBXWAWEJ-UHFFFAOYSA-J 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001647 dawsonite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012948 isocyanate Substances 0.000 description 2
- 150000002513 isocyanates Chemical class 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000001451 organic peroxides Chemical class 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 150000007519 polyprotic acids Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical group CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Definitions
- the present invention relates to a method for mounting another electronic component such as a semiconductor chip on an electronic component such as a circuit board, and a method for forming a bump on an electrode of an electronic component such as a circuit board or a semiconductor chip.
- a technology necessary for increasing the density of electronic circuits is a high-density mounting technology for semiconductor integrated circuits (LSIs). Because of the rapid advancement of multi-pinned and narrow pitch connection electrodes (simply called “electrodes”) of LSI chips, the semiconductor package technology is CSP (chip size package) that uses bare chip flip chip mounting. ) And PPGA and BGA mounting to external terminals are common. Therefore, there is a need for new packaging technology that can cope with the increase in the speed and size of mounted ICs and the increase in the number of input / output terminals.
- a plurality of electrode pads are formed on a semiconductor chip, and bumps are formed on the electrode pads with a material such as solder or Au.
- the bumps and the electrodes are electrically joined by disposing the bumps of the semiconductor chip so as to face the plurality of electrodes formed on the circuit board.
- a resin material is filled (underfilled) between the semiconductor chip and the circuit board to improve electrical and mechanical bonding between the semiconductor chip and the circuit board.
- force plating methods such as a plating method and a screen printing method are suitable for narrowing the pitch, but there are problems in terms of productivity because the process is complicated.
- the screen printing method is excellent in terms of productivity, it is suitable for narrow pitch because it uses a mask.
- Patent Document 1 An example of the technique is described in Patent Document 1, for example. Briefly, first, a solder paste, which is a mixture of solder powder and flux, is applied to the entire surface of the circuit board on which the surface-oxidized electrode is formed, and then the circuit board is heated. As a result, the solder powder is melted and a solder layer is selectively formed on the electrodes without causing a short circuit between adjacent electrodes.
- a solder paste which is a mixture of solder powder and flux
- Patent Document 2 Non-Patent Document 1
- a paste-like composition (chemical reaction precipitation type solder) mainly composed of an organic acid lead salt and metallic tin is applied to the entire surface of the circuit board on which the electrodes are formed, and thereafter Then, heat the circuit board.
- a substitution reaction between Pb and Sn occurs, and the PbZSn alloy is selectively deposited on the electrodes of the circuit board.
- a conductive adhesive composed of a thermosetting resin and conductive particles is supplied between a semiconductor chip and a circuit board, and the semiconductor chip
- a method has been proposed in which the conductive adhesive is heated while pressure is applied. In this method, molten conductive particles are gathered between the electrodes of the semiconductor chip and the electrodes of the circuit board so that the electrodes can be electrically connected to each other, and at the same time, the semiconductor chip and the circuit board can be joined to each other. It becomes.
- Patent Document 1 JP 2000-94179 A
- Patent Document 2 Japanese Patent Laid-Open No. 1-157796
- Patent Document 3 Japanese Patent Laid-Open No. 7-74459
- Patent Document 4 Japanese Unexamined Patent Publication No. 2000-332055
- Patent Document 5 Japanese Unexamined Patent Application Publication No. 2004-260131
- Non-Patent Document 1 Electronics Packaging Technology, September 2000, pp. 38-45
- the resin interposed between the circuit board and the semiconductor chip is pressurized and heated, and the molten solder powder is automatically applied between the semiconductor chip electrode and the circuit board electrode.
- the conductive adhesive applied on the substrate gradually increases in viscosity as the molecular weight increases in the heating stage. As the viscosity increases, fluidization of the molten conductive particles is hindered, but some of the conductive particles may remain in a region other than between the electrode pads. As a result, there is a concern that the insulating property between the electrodes is lowered.
- the present invention has been made in view of the above circumstances. That is, the problem of the present invention is to short circuit This is to provide a flip chip mounting method and a bump forming method that are preferable in terms of connection reliability.
- the present invention provides a flip chip mounting method for electrically connecting a first electronic component and a second electronic component
- connection body also referred to as “solder layer”
- solder layer A step of heating the composition to form a connection body (also referred to as “solder layer”) that electrically connects electrode a and electrode b from conductive particles and solder powder.
- a flip chip mounting method is provided.
- the composition is heated to a temperature at which the solder powder melts, and the gas generated by boiling or decomposition of the convective additive can be flowed. Occurs.
- This convection allows the solder powder to fluidize and move freely within the composition.
- the molten solder powder self-assembles and grows around the conductive particles as nuclei, so that a connection body for connecting the electrodes to each other is formed.
- the reason why the molten solder powder self-assembles as described above is due to the wettability of the conductive particles and z or the electrode with respect to the solder powder.
- the first electronic component is a semiconductor chip and the second electronic component is a circuit board.
- the conductive particles are formed from a conductive material, they may be formed from a misaligned material cover.
- the conductive particles are at least one kind of particles selected from the group consisting of metal particles composed of a single composition metal, solder particles, plated metal particles, and plated resin particle force. Is preferred.
- metal particles made of a metal having a single composition include particles having a metal force such as Cu, Ag, Au, Ni, Pt, Sn, Bi, or Zn
- solder particles include Sn— Alloys such as Pb, Sn-Ag, Sn-Ag-Cu, Sn-Bi-Ag-In, Sn—Bi—Zn, Sn—Bi—Ag—Cu, Sn—Zn, Sn—Sb or Sn—Pb—Ag
- Melt metal particles include metal particles plated with at least one metal material selected from the group forces consisting of Cu, Ag, Au, Ni and Sn (such metal particles).
- particles are resin particles plated with at least one metal material that also has a selected group force consisting of Cu, Ag, Au, Ni, and Sn.
- the resin particles themselves are epoxy resin, phenol resin, polyimide resin, polyamide resin, melamine resin, unsaturated polyester resin, alkyd resin, cyanate resin, dibutene benzene polymer, Butylbenzene Styrene copolymer, dibulene-acrylic acid ester copolymer, diallyl phthalate polymer, triallyl isocyanate polymer, benzoguanamine polymer, polyethylene, polypropylene, polymethylpentene, polychlorinated butyl, poly Tetrafluoroethylene, polystyrene, polymethyl methacrylate, polyethylene terephthalate, polybutylene terephthalate, polysnolephone, polyphenylene oxide, and polyacetal force Group force selected At least one material force selected is also formed Yes.
- a preferable particle diameter of the conductive particles is, for example, 1 / ⁇ ⁇ to 50 / ⁇ m.
- the resin component is cured to form a resin layer that adheres the first electronic component and the second electronic component to each other.
- the resin component contained in the composition supplied in step (iii) includes epoxy resin, unsaturated polyester resin, alkyd resin, polybutadiene resin, polyimide resin, polyamide resin and It is preferable that at least one kind of resin (or a main ingredient of heat-cured resin), which is selected from group power consisting of cyanate resin, is included. Further, the resin component can contain a curing agent or a crosslinking agent. Examples of strong curing agents or crosslinking agents include aliphatic amines, aromatic amines, aliphatic acid anhydrides, alicyclic acid anhydrides, organic peroxides, and polybasic acids. Na Preferably, the composition supplied in step (iii) has a paste-like or sheet-like form.
- the convective additive contained in the composition supplied in step (iii) preferably has a boiling point at desired U, temperature, or decomposes to produce a gas.
- the convective additive has a boiling point between the curing reaction start temperature (T) and the curing reaction peak temperature (T) of the resin component.
- the curing reaction start temperature (T) is shown in Fig. 9.
- the temperature at the point where the tangent at the inflection point P and the baseline of the curve that rises to the exothermic peak is the temperature at the exothermic peak of the DSC curve obtained by differential scanning calorimetry of the resin component.
- “Differential scanning calorimetry” here refers to differential scanning calorimetry using a differential scanning calorimeter (Seiko Instruments Inc., model: DSC220). The test was carried out under conditions where the temperature was raised from room temperature at a rate of 10 ° CZ.
- Examples of the convective additive include a decomposition type convective additive and an evaporation type convective additive.
- decomposition-type convective additives include sodium bicarbonate, ammonium metaborate, sodium hydroxide, dawsonite or barium metaborate
- evaporative convective additives include butyl.
- examples thereof include medium-boiling solvents or high-boiling solvents such as carbitol, isobutyl alcohol, xylene, isopentyl alcohol, butyl acetate, tetrachloroethylene, methyl isobutyl ketone, ethyl carbitol or ethylene glycol.
- the convective additive may be a mixture in which the substances exemplified above are combined.
- the solder powder contained in the composition supplied in step (iii) may be a conventional solder material force such as a Pb-Sn alloy, but in view of environmental problems.
- solder materials such as Sn-Ag alloys, Sn-Ag-Cu alloys, Sn-Bi-Ag-In alloys, Sn-Bi-Zn alloys, Sn-Bi-Ag-Cu
- lead-free solder materials such as Sn-Zn alloy, Sn-Zn alloy or Sn-Sb alloy can be used.
- a flip chip mounting body obtained by the above flip chip mounting method is also provided.
- the obtained flip chip mounting body includes a plurality of electrodes a provided on the first electronic component and a plurality of electrodes b formed on the second electronic component corresponding to the electrode a by the connection body. It has an electrically connected configuration.
- the first electronic component is preferably a semiconductor chip
- the second electronic component is preferably a circuit board.
- the present invention also provides a bump forming method that can be achieved only by a flip chip mounting method.
- the bump forming method of the present invention is a method of forming bumps on a plurality of electrodes of an electronic component,
- step (vi) not only the releasable cover but also the resin layer may be removed.
- the composition is heated to a temperature at which the solder powder melts, and a gas generated by boiling or decomposition of the convective additive can be flowed. Occurs. This convection allows the solder powder to fluidize and move freely within the yarn and product. As a result, the molten solder powder self-assembles and grows around the conductive particles as nuclei, and bumps are formed on the electrodes.
- the electronic component is a semiconductor chip or a circuit board.
- the conductive particles may be at least one kind of particles selected from the group consisting of metal particles having a single compositional metal force, solder particles, plated metal particles, and plated resin particles. Preferably there is.
- metal particles having a single composition of metal force include Cu, Ag, Au, Ni, Pt, Sn, B, etc., include particles with metallic forces such as Zn, and “solder particles” include Sn—Pb, Sn—Ag, Sn—Ag—Cu, Sn—Bi—Ag—In, Sn—Bi—Zn, Sn—Bi—Ag—Cu, Sn—Zn, Sn—Sb, Sn—Pb—Ag, and other particles of alloy strength are included.
- Metallic metal particles include Cu, Ag Metal particles plated with at least one metal material that can also be selected from the group forces consisting of Au, Ni and Sn (The metal particles themselves consist of Cu, Ag, Au, Ni, Pt, Sn, Bi and Zn.
- the particles are also composed of at least one kind of metal material force selected from the group), and the group force composed of Cu, Ag, Au, Ni, and Sn is also selected as the “greased resin particles”
- the resin particles plated with at least one kind of metal material wherein the resin particles themselves are epoxy resin, phenol Resin, polyimide resin, polyamide resin, melamine resin, unsaturated polyester resin, alkyd resin, cyanate resin, dibule benzene polymer, dibulebenzene-styrene copolymer, dibulebenzene acrylic acid Ester copolymer, diallyl phthalate polymer, triallyl isocyanate polymer, benzoguanamine polymer, polyethylene, polypropylene, polymethylpentene, polyvinyl chloride, polytetrafluoroethylene, polystyrene, polymethylol methacrylate Group power consisting of rate, polyethylene terephthalate, polybutylene terephthalate, polysulfone, polypheny
- the preferred particle diameter of the conductive particles is, for example, 1 ⁇ to 50 / ⁇ m, similarly to the flip chip mounting method described above.
- the conductive particles are preferably fixed or fixed to the electrode.
- the resin component contained in the composition supplied in step (iii) includes epoxy resin, unsaturated polyester resin, alkyd resin, polybutadiene resin, and polyimide resin.
- the resin component may contain a curing agent or a crosslinking agent.
- hard curing agents or crosslinking agents examples include aliphatic amines, aromatic amines, aliphatic acid anhydrides, alicyclic acid anhydrides, organic peroxides, and polybasic acids.
- the resin component contained in the composition may be one that does not harden when heated and has fluidity when cooled.
- the composition supplied in step (iii) has a paste-like or sheet-like form.
- the releasable cover prepared in the step (i) is a plate-like material composed of at least one selected from the group of silicone resin, fluorine resin, and polypropylene resin. Is preferred.
- the releasable cover prepared in step (i) is a plate coated with at least one material selected from a group force consisting of silicon oil, inorganic oxide, inorganic nitride, and inorganic nitride oxide strength. It is preferable that it is a shape.
- step (i) between step (i) and step (ii), a step of forming a release agent layer on the surface A of the electronic component excluding the region where the electrode is provided.
- step (vi) not only the releasable cover but also the resin layer and the release agent layer are removed.
- the surface B of the releasable cover prepared in step (i) has a plurality of lands formed corresponding to the electrodes of the electronic component, and the lands are excluded.
- a release agent layer is formed in the area,
- step (iv) a releasable cover is disposed on the composition so that the land and the electrode face each other,
- step (V) conductive particles and solder powder force also form bumps that connect lands and electrodes,
- step (vi) the releasable cover and release agent layer are removed with the lands remaining on the bumps.
- the thickness of the release agent layer formed on the releasable cover prepared in step (i) may be larger than the thickness of the land.
- the present invention also provides a bump mounting body obtained by the above bump forming method, in which bumps are formed on a plurality of electrodes provided in an electronic component. .
- the fluidized solder powder can be efficiently captured by the conductive particles provided on the electrode to form a connection body (“solder layer”) or bump.
- the flip chip mounting method of the present invention it is possible to eliminate the remaining of the solder powder in a region other than the electrode, and to prevent a short circuit or the like. As a result, the obtained flip chip mounting body is realized with a flip chip mounting body with excellent productivity and high connection reliability.
- the solder powder can be efficiently captured due to the conductive particles provided on the electrode of the electronic component, so that a large number of bumps can be formed with high productivity.
- the obtained bump mounting body a bump having a uniform shape is realized, and a highly reliable bump mounting body with excellent insulation between the bumps can be obtained.
- FIGS. 1 (a) to (e) are cross-sectional views illustrating a flip-chip mounting method according to the first embodiment of the present invention.
- FIG. 1 1 (a) to 2 (d) are process cross-sectional views partially showing each process of the flip chip mounting method of the present invention according to Embodiment 1.
- FIG. 1 is a process cross-sectional views partially showing each process of the flip chip mounting method of the present invention according to Embodiment 1.
- FIG. 3 (a) to 3 (c) are cross-sectional views of the flip chip mounting body of the present invention according to Embodiment 2.
- FIG. 3 (a) to 3 (c) are cross-sectional views of the flip chip mounting body of the present invention according to Embodiment 2.
- FIG. 4 (a) to 4 (f) are process sectional views showing a bump forming method of the present invention according to Embodiment 3.
- FIG. 4 (a) to 4 (f) are process sectional views showing a bump forming method of the present invention according to Embodiment 3.
- FIG. 5 (a) to 5 (g) are process sectional views showing a bump forming method of the present invention according to Embodiment 4.
- FIG. 5 (a) to 5 (g) are process sectional views showing a bump forming method of the present invention according to Embodiment 4.
- FIGS. 6 (a) and 6 (b) are a plan view and a cross-sectional view (cross-sectional view taken along line A—A) of a releasable cover used in the bump forming method of the present invention according to Embodiment 5.
- FIG. 6 (c) is a cross-sectional view showing a modified example.
- FIG. 7 (a) to 7 (f) are process cross-sectional views illustrating the bump forming method of the present invention according to Embodiment 5.
- FIG. 7 (a) to 7 (f) are process cross-sectional views illustrating the bump forming method of the present invention according to Embodiment 5.
- FIGS. 8A and 8B are process cross-sectional views illustrating a modified example of the bump forming method of the present invention according to Embodiment 5.
- FIGS. 8A and 8B are process cross-sectional views illustrating a modified example of the bump forming method of the present invention according to Embodiment 5.
- FIG. 9 is a conceptual diagram of a DSC curve obtained by differential scanning calorimetry of a resin component.
- Second electronic component for example, circuit board
- Electrode b of second electronic component (for example, electrode terminal)
- Electrode a of the first electronic component a (for example, connection terminal)
- FIG. 1 is a process sectional view showing a process of the flip chip mounting method according to the first embodiment of the present invention.
- a paste-like resin composition 6 (in the present specification, simply “" on the surface of the circuit board 1 provided with the electrode 2 (that is, “electrode b”)).
- a powerful paste-like rosin composition 6 comprises a thermosetting resin mainly composed of bisphenol A type epoxy resin and dicyandiamide as the rosin component 5, and acetic acid as an evaporative convection additive. It is a composition in which solder powder 4 composed of a Pb—Sn alloy is uniformly dispersed in a mixture containing butyl.
- the semiconductor chip 8 (ie, “first electronic component”) provided with the electrode 7 (ie, “electrode a”) is placed on the upper surface of the resin composition 6. Abut. At this time, the semiconductor chip 8 is arranged so that the electrodes 7 of the semiconductor chip 8 face the electrodes 2 on the circuit board 1 as shown in the figure.
- the circuit board 1 is heated to raise the temperature of the resin composition 6.
- the viscosity of the rosin composition 6 is lowered, and the convective additive ptylcarbitol is boiled to generate gas 9.
- gas 9 generates convection inside the vaginal fat composition 6 that escapes to the outside (see “arrow” in FIG. 1 (d)).
- the solder powder 4 self-assembles onto the electrode 2 due to the high wettability of the conductive particles, so that the connecting body 10 (or the connection between the electrode 2 and the electrode 3 (or “Solder layer”) will be formed.
- FIG. 2 is a cross-sectional view partially showing each process of the flip chip mounting method according to the first embodiment of the present invention.
- the solder powder 4 flows in the resin composition 6 by convection of a gas (not shown) generated by the temperature increase of the resin composition 6. Since the temperature is high, a part of the solder powder 4 becomes a molten solder powder 4a and flows in the resin composition 6 together with the solder powder 4. And When the solder powder 4 and Z or the molten solder powder 4 a reach the electrode 2, the flow is suppressed by the conductive particles 3 fixed on the upper surface of the electrode 2. At that time, the molten solder powder 4a is captured by the conductive particles 3 having high wettability with respect to the solder and fused around the conductive particles 3 to form the molten solder 4b.
- thermosetting resin containing a bisphenol A type epoxy resin is used as the resin component 5 of the resin composition 6
- the present invention is not limited thereto. Not.
- the same effect can be obtained even if a thermosetting resin containing polyimide resin, cyanate resin or the like is used.
- the present invention is not limited to this.
- metal powders having high wettability with respect to solder such as Au powder and Cu powder, alloy powders thereof, and resin powder plated with metal such as Cu or solder can be used.
- the conductive particles 3 can provide a nucleus for capturing the molten solder powder 4a and the like by using a solder powder whose melting point is higher than that of the solder powder 4.
- the solder powder as the conductive particles 3 is fused integrally with the molten solder 4b after completing the function as a core for capturing the molten solder powder 4a and the like to form the connection body 10.
- the resin composition 6 is applied as a pasty resin on the circuit board 1 .
- the resin composition 6 is preliminarily cured by semi-curing in advance.
- the sea It can also be used as a globular fat.
- FIG. 3 (a) is a cross-sectional view of a flip chip mounting body according to Embodiment 2 of the present invention.
- This flip chip mounting body is obtained by the flip chip mounting method of the first embodiment. That is, the conductive particles 3 are placed on the electrodes 2 of the circuit board 1, and the molten solder powder 4 a is captured by the conductive particles 3 to form the connection body 10.
- the connection body 10 the molten solder 4 b grows up to the electrode 7 of the semiconductor chip 8 with the conductive particles 3 as the nucleus, and the electrode 2 of the circuit board 1 and the electrode 7 of the semiconductor chip 8 are electrically interconnected. Connected to.
- FIG. 3 (b) is a cross-sectional view showing a modified example of the flip chip mounting body according to the second embodiment of the present invention.
- the conductive particles 3 are fixedly disposed on the electrodes 7 of the semiconductor chip 8, and the molten solder powder 4a is captured by the conductive particles 3 to form the connection body 10. It is what.
- the connection body 10 that is applied is obtained by growing the molten solder 4b up to the electrode 2 of the circuit board 1 with the conductive particles 3 on the electrodes 7 of the semiconductor chip 8 as the core.
- the electrode 2 and the electrode 7 of the semiconductor chip 8 are electrically connected to each other.
- FIG. 3 (c) is a cross-sectional view showing another modified example of the flip chip mounting body according to Embodiment 2 of the present invention.
- the conductive particles 3 are not only fixed on the electrode 2 of the circuit board 1 but also fixed on the electrode 7 of the semiconductor chip 8. Therefore, the melted powder 4a is captured with the strong conductive particles 3a and 3b as nuclei, and the molten solder 4b grows oppositely.
- the connection body 10 by self-assembling the molten solder powder 4a between the electrode 2 and the electrode 7 efficiently in an extremely short time, and the connection reliability can be further improved.
- FIG. 3 shows an example in which one semiconductor chip is mounted on the circuit board 1, but a plurality of semiconductor chips can be similarly mounted. Further, a plurality of chip components such as chip resistors and chip capacitors may be mounted on the circuit board 1.
- the solder component self-assembled due to the conductive particles (3, 3a, 3b) present in the connection body 10 and the conductive particles (3, 3a, Connection reliability with electrodes 2 and 7 to which 3b) is fixed is improved.
- a stress relaxation action can be obtained, such as a possibility that a crack may occur and a connection failure may be reduced.
- further stress relaxation action can be obtained by using the solder particles or metal-coated resin particles as the conductive particles (3, 3a, 3b).
- FIG. 4 is a cross-sectional view showing the steps of the bump forming method according to Embodiment 3 of the present invention.
- a solder is applied on an electrode 22 (or "electrode terminal” or “connection terminal") provided on the upper surface of an electronic component 21 such as a semiconductor chip or a circuit board.
- the conductive particles 23 for example, Ag powder
- an adhesive flux is applied to the surface of the electrode 22, the conductive particles 23 are sprayed to fix the conductive particles 23 only on the electrode 22, and then the conductive particles 23 on the electronic component 21 are attached. It is possible to use a method of paying off. Alternatively, a method of selectively printing a paste containing conductive particles 23 on the electrode 22 may be used.
- the adhesive flux preferably has a high viscosity (viscosity) when the solder is melted in order to strongly adhere the conductive particles 23 onto the electrode 22.
- a paste-like resin composition 26 is applied to the upper surface of the electronic component 21 provided with the electrodes 22.
- Cured paste-like resin composition 26 is a mixture of bisphenol F-type epoxy resin as a resin component 25 and a mixture of butyl carbitol and isobutyl alcohol as a convective additive. This is a composition in which solder powder composed of a Pb—Sn alloy is uniformly dispersed.
- a plate-like releasable cover 27 having a force such as polypropylene resin is brought into contact with the upper surface of the resin composition 6.
- the electronic component 21 is heated from the lower surface, and the temperature of the resin composition 26 is increased. As a result, the viscosity of the rosin composition 26 decreases and convection occurs. A mixture of the additives butyl carbitol and isobutyl alcohol boil and gas 28 is generated. Such gas 28 generates convection inside the vaginal resin composition 26 that escapes to the outside (see “arrow” in FIG. 4 (d)).
- the solder powder 24 flows and starts melting while convection, and self-assembles near the electrode 22 due to wettability.
- the solder powder 24 is restrained from flowing by the conductive particles 23 fixed on the electrode 22, and is captured by the conductive particles 23 having high wettability with respect to the solder and fused around it.
- the molten solder 24b will gradually grow to form bumps.
- the releasable cover 27 is peeled from the resin layer 29.
- the releasable cover 27 is formed of polypropylene resin having no adhesiveness to the obtained resin layer 29, it can be easily peeled off from the resin layer 29.
- the electronic component 21 in which the bumps 30 including the conductive particles 23 are provided on the electrode 22 can be obtained.
- the force described in the example in which a plate-like material made of polypropylene resin is used as the releasable cover 27 is not limited to this.
- a plate having strength such as silicon resin or fluorine resin, or a plate having a release agent such as silicon oil coated on the surface.
- the bump forming method of the third embodiment is not limited to the described form, and various modifications can be made. One example will be described below.
- the releasable cover instead of the releasable cover as described above, low wettability with respect to solder, such as glass, may be used as the releasable cover. Then, although the solder component has grown and solidified to the releasable cover, the resin component is still cured! / In this state, the releasability force bar is peeled off from the resin composition. To do. In such cases, the releasable cover should be wettable with solder. Therefore, the composition of the resin composition can be easily peeled off. The resin composition remaining between the bumps formed on the electrodes of the electronic component may be removed by, for example, etching or a solvent.
- the resin component of the resin composition used in the case of force it is preferable to use a resin component that does not harden at the temperature at which the solder powder convects and has fluidity when cooled after bump formation. .
- FIG. 5 is a cross-sectional view showing the steps of the bump forming method according to the fourth embodiment of the present invention.
- a release agent such as silicon resin is applied to the surface A of the electronic component 21 (for example, a semiconductor chip or a circuit board) excluding the region where the electrode 22 is provided.
- a release agent layer (or “release film”) 31 is formed.
- conductive particles 23 eg, Ag powder
- conductive particles 23 having high wettability with respect to the solder are fixed on the electrode 22 and the release agent layer 31 by the same method as described in the first embodiment.
- a paste-like rosin composition 26 is applied.
- the paste-like rosin composition 26 is convection-added with thermosetting rosin mainly composed of phthalic anhydride and glycerin as the rosin component 25 and ammonium metaborate as a decomposable convective additive.
- thermosetting rosin mainly composed of phthalic anhydride and glycerin
- ammonium metaborate as a decomposable convective additive.
- solder powder 24 composed of a Pb—Sn alloy is uniformly dispersed in a mixture containing an agent.
- a releasable cover 27 having a force such as a polypropylene sheet or a silicone resin sheet is brought into contact with the upper surface of the resin composition 26.
- the electronic component 21 is heated from the lower surface, and the temperature of the resin composition 26 is increased.
- the viscosity of the resin composition 26 decreases, and the convective additive, ammonium metaborate, decomposes to generate gas 28.
- the gas 28 generates convection inside the vaginal resin composition 26 that is extracted outside (see “arrow” in FIG. 5 (d)).
- the solder powder 24 is fluidized and starts melting while convection, and self-assembles near the electrode 22 due to wettability.
- Solder powder 24 is an electrode
- the conductive particles 23 fixed on the surface 22 suppress the flow and are captured by the conductive particles 23 having high wettability with respect to the solder and fused around the conductive particles 23. It will grow gradually to form.
- the solder powder 24 and the molten solder powder flow by convection and are self-assembled onto the electrode 22 so as to be captured by the conductive particles 23.
- the process of growing and the process of growing the molten solder 24b are the same as described with reference to FIG.
- the bump 30 is obtained from 3 and the resin component 25 in the resin composition 26 is cured to obtain the resin layer 29.
- the releasable cover 27 is removed from the electronic component 21. Specifically, the releasable cover 27 is peeled from the resin layer 29.
- the releasable cover 27 also has a force such as polypropylene resin that does not have adhesiveness to the resin layer 29, and therefore can be easily peeled off from the resin layer 29.
- the electronic component 21 having only the bumps 30 on one surface is finally obtained.
- a release agent layer made of polypropylene or a resin such as fluorine resin, or a release agent layer coated with a release agent such as silicone oil may be formed.
- Embodiment 5 of the present invention will be described with reference to FIGS. Components similar to those in FIG. 4 are denoted by the same reference numerals.
- 6 (a) and 6 (b) are a plan view and a cross-sectional view (cross-sectional view taken along line AA) of the releasable cover used in the bump forming method according to Embodiment 5 of the present invention. .
- a plurality of lands 42 having, for example, Cu, Sn and the like are formed on the surface B of the releasable cover 41 .
- the powerful lands 42 are a plurality of electronic components (not shown). Are formed at positions corresponding to the electrodes.
- a release agent layer 43 is formed on the surface B of the release cover 41 excluding the area where the land 42 is formed by applying a release agent such as epoxy resin. Yes.
- FIG. 6C is a cross-sectional view (a cross-sectional view taken along line AA) showing a modified example of the releasable cover.
- the thickness force of the release agent layer 53 applied to the surface B excluding the lands 52 is formed to be thicker than the lands 52! /.
- a paste-like grease thread and composition 26 is applied to the upper surface of the electronic component 21.
- This rosin composition 26 is used for a mixture containing glycerin, maleic anhydride and benzoyl peroxide as a rosin component 25, and sodium bicarbonate as a decomposing convective additive.
- the releasable cover 41 is brought into contact with the upper surface of the resin composition 26.
- the electrodes 22 on the electronic component 21 and the lands 42 of the releasable cover 41 are brought into contact with each other so as to face each other.
- the electronic component 21 is heated to raise the temperature of the resin composition 26.
- the viscosity of the rosin composition 26 is lowered, and the convective additive sodium hydrogen carbonate is decomposed to generate gas 28.
- the gas 28 generates convection inside the resin composition 26 in order to escape to the outside (see “arrow” in FIG. 7 (d)).
- the solder powder 24 is fluidized, starts melting while being convected, and self-assembles near the electrode 22 due to wettability.
- the solder powder 24 is prevented from flowing by the conductive particles 23 fixed on the electrode 22, and is captured by the conductive particles 23 having high wettability with respect to the solder and fused around the solder particles 24.
- Solder 24b will gradually grow to form bumps. Finally, as shown in FIG. 7E, the molten solder 24b grows as a bump body until the upper end of the molten solder 24b is connected to the land 42 on the releasable cover 41. Then, the release cover 41 and the release agent layer 43 are removed with the lands remaining on the bumps. In this case, it is preferable to release the release cover 41 and the release agent layer 43 while the molten solder 24b is not solidified while the resin component 25 is cured. .
- the resin layer 29 can be used as a bonding interval regulating material in a flip chip mounting process of a semiconductor chip, and mounting with excellent reliability such as bonding can be realized.
- FIG. 8 shows a bump formation method using the release cover 51 of FIG. 6 (c).
- FIGS. 8 (a) and 8 (b) are shown in FIGS. 7 (e) and (f), respectively.
- the other steps are the same as in FIG.
- the upper end of the molten solder 24b is grown to a state where it is connected to the land 52 on the release force bar 51.
- the release agent layer 53 provided on the releasable cover 51 is thicker than the land 52, the molten solder 24b protrudes from the resin layer 29.
- the molten solder 24b solidifies and becomes thicker than the resin layer 29.
- a bump 55 having a uniform spherical protrusion 54 can be obtained.
- the height of the bump 55 can be freely set by changing the thickness of the release agent layer 53. In addition, it is not limited by the degree of hardening shrinkage of the rosin component, but the applicable range is widened.
- a flip chip mounting method for electrically connecting a first electronic component and a second electronic component comprising:
- (V) A step of heating the composition to form a connection body that electrically connects the electrode a and the electrode b from the conductive particles and the solder powder.
- a flip chip mounting method comprising:
- the resin component in the step (V), is cured to form a resin layer that adheres the first electronic component and the second electronic component to each other.
- a flip chip mounting method characterized by the above.
- the first electronic component prepared in the step (i) is a semiconductor chip
- the second electronic component prepared in the step (i) is A flip chip mounting method, characterized by being a circuit board.
- the conductive particles provided in the step (ii) are metal particles, solder particles, plated metal particles, and Characterized in that it is at least one kind of particles selected from the group consisting of coated wax particles. Flip chip mounting method.
- the flip chip mounting method characterized by having a paste-like or sheet-like form as described above.
- the convection additive contained in the composition supplied in the step (iii) is used to initiate the curing reaction of the resin component.
- a flip-chip mounting method characterized by generating a gas having a boiling point or being decomposed between a temperature and a curing reaction peak temperature.
- the convective additive contained in the composition supplied in step (iii) is xylene, isobutyl alcohol, isopentyl. Alcohol, butyl acetate, tetrachloroethylene, methyl isobutyl ketone, ethyl carbitol, butyl carbitol, ethylene glycol, aluminum hydroxide, dawsonite, ammonium metaborate, barium metaborate and sodium bicarbonate
- a flip chip mounting method characterized by comprising at least one kind of substance.
- the resin component contained in the composition supplied in step (iii) includes epoxy resin, unsaturated resin.
- a flip chip mounting method comprising at least one selected resin .
- a flip chip mounting body capable of obtaining the flip chip mounting method of any of the first to eighth aspects, wherein the plurality of electrodes a of the first electronic component and the plurality of electrodes b of the second electronic component Flip chip mounting body that is electrically connected to each other.
- Tenth aspect A flip-chip mounting body according to the ninth aspect, wherein the first electronic component is a semiconductor chip and the second electronic component is a circuit board.
- a method of forming bumps on a plurality of electrodes of an electronic component comprising:
- a bump forming method comprising:
- Twelfth aspect The bump forming method according to the eleventh aspect, wherein not only the releasable cover but also the resin layer is removed in the step (vi).
- the releasable cover prepared in the step (i) comprises:
- the electronic component excluding a region where an electrode is provided between the step (i) and the step (ii). Further comprising the step of forming a release agent layer on surface A of
- the bump forming method is characterized by removing not only the releasable cover but also the resin layer and the release agent layer.
- a plurality of lands corresponding to the electrodes of the electronic component are formed on the surface B of the releasable cover prepared in the step (i). And a release agent layer is formed in a region excluding the land, and in the step (iv), the release cover is provided so that the land and the electrode face each other. Placing on the composition;
- the land and the electric power are formed from the conductive particles and the solder powder. Form bumps that connect the poles, and
- the releasable cover and the release agent layer are removed while leaving the land on the bump.
- a thickness of the release agent layer formed on the release force bar prepared in the step (i) is larger than a thickness of the land. And bump formation method.
- the yarn and composition force supplied in the step (iii) has a paste-like or sheet-like form. Bump formation method.
- epoxy resin, unsaturated polyester resin, alkyd resin may be used as the resin component contained in the composition used in step (iii).
- a bump forming method comprising at least one selected from the group consisting of polybutadiene resin, polyimide resin, polyamide resin and cyanate resin.
- the flip chip mounting method according to the present invention can efficiently capture and grow the molten solder that self-assembles between the electrodes by the conductive particles fixed on the electrodes, so that circuit boards, semiconductor chips, etc. It is particularly useful in the field of implementation.
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Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007508122A JP4402717B2 (ja) | 2005-03-16 | 2006-03-13 | 導電性粒子を用いたフリップチップ実装方法およびバンプ形成方法 |
US11/886,311 US7726545B2 (en) | 2005-03-16 | 2006-03-13 | Flip chip mounting process and bump-forming process using electrically-conductive particles as nuclei |
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JP2008153296A (ja) * | 2006-12-14 | 2008-07-03 | Fujitsu Ltd | 接続構造体とその製造方法および半導体装置とその製造方法 |
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Also Published As
Publication number | Publication date |
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US7726545B2 (en) | 2010-06-01 |
CN101142667A (zh) | 2008-03-12 |
US20080165518A1 (en) | 2008-07-10 |
JP4402717B2 (ja) | 2010-01-20 |
CN100533701C (zh) | 2009-08-26 |
JPWO2006098268A1 (ja) | 2008-08-21 |
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