WO2006090602A1 - プラズマcvd法による蒸着膜 - Google Patents
プラズマcvd法による蒸着膜 Download PDFInfo
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- WO2006090602A1 WO2006090602A1 PCT/JP2006/302426 JP2006302426W WO2006090602A1 WO 2006090602 A1 WO2006090602 A1 WO 2006090602A1 JP 2006302426 W JP2006302426 W JP 2006302426W WO 2006090602 A1 WO2006090602 A1 WO 2006090602A1
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- Prior art keywords
- deposited film
- region
- metal element
- organic
- carbon
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
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- B05D2201/00—Polymeric substrate or laminate
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B05D2490/00—Intermixed layers
- B05D2490/50—Intermixed layers compositions varying with a gradient perpendicular to the surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1317—Multilayer [continuous layer]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1317—Multilayer [continuous layer]
- Y10T428/1321—Polymer or resin containing [i.e., natural or synthetic]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/1352—Polymer or resin containing [i.e., natural or synthetic]
- Y10T428/1355—Elemental metal containing [e.g., substrate, foil, film, coating, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/1352—Polymer or resin containing [i.e., natural or synthetic]
- Y10T428/1355—Elemental metal containing [e.g., substrate, foil, film, coating, etc.]
- Y10T428/1359—Three or more layers [continuous layer]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/1352—Polymer or resin containing [i.e., natural or synthetic]
- Y10T428/1379—Contains vapor or gas barrier, polymer derived from vinyl chloride or vinylidene chloride, or polymer containing a vinyl alcohol unit
- Y10T428/1383—Vapor or gas barrier, polymer derived from vinyl chloride or vinylidene chloride, or polymer containing a vinyl alcohol unit is sandwiched between layers [continuous layer]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/1352—Polymer or resin containing [i.e., natural or synthetic]
- Y10T428/139—Open-ended, self-supporting conduit, cylinder, or tube-type article
- Y10T428/1393—Multilayer [continuous layer]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to a deposited film formed on a surface of a substrate such as a plastic bottle by a plasma C VD method.
- a deposited film is formed on the surface by a plasma C V D method.
- a plasma C V D method it is known to improve the gas barrier property by forming a deposited film by a plasma C VD method on a plastic substrate such as a container.
- an organic silicon compound and a gas having oxygen or oxidizing power are used, and a plasma CVD method is used to select a gate oxide from carbon oxide, hydrogen, silicon and oxygen on the outer surface or inner surface of a plastic container.
- a method for producing a plastic container is known in which the concentration of an organosilicon compound changes when forming a deposited film (barrier layer) containing a compound composed of at least one element (patent) Literature 1 # .3 ⁇ 4?) O
- a gas barrier comprising: a base material; a gas barrier layer (deposited film) formed on one or both surfaces of the base material; and a water-repellent film (water-repellent layer) formed on the gas barrier layer.
- a film is also known (see Patent Document 2).
- Patent Document 1 Japanese Patent Application Laid-Open No. 2 0 00-0 2 5 5 7 9
- Patent Document 2 Japanese Patent Laid-Open No. 2 053-5 3 8 7 3
- the deposited film formed by the method of Patent Document 1 has excellent barrier effect against various gases such as oxygen, but has low durability against moisture, such as mineral strength such as mineral water.
- moisture such as mineral strength such as mineral water.
- gale element elutes in an aqueous solution.
- the gas barrier film described in Patent Document 2 is used. Since the water repellent layer is formed on the surface of the gas barrier layer, which is a vapor-deposited film, the resistance to moisture is improved to some extent, but the degree of improvement is not sufficient. The elution of gay elements into the inside cannot be suppressed sufficiently.
- a metal oxide vapor-deposited film typified by silicon oxide exhibits a high gas barrier property, but lacks flexibility, and has a drawback of low adhesion to a substrate on which the vapor-deposited film is formed, particularly a plastic substrate. is there. For this reason, when the vapor deposition film is formed on a plastic container or the like, if the container is deformed due to expansion or the like, the vapor deposition film cannot follow the deformation of the container. As a result, the gas barrier property is greatly reduced. There is a problem that.
- Vapor deposition is performed by forming an organic layer with a high organic carbon concentration on the substrate surface in advance, and continuously forming a metal oxide layer with a high metal concentration and a high inorganic concentration on the organic layer. It was proposed to form a film (see Patent Document 3).
- an organic layer is formed below the metal oxide layer having a high gas barrier property, that is, on the substrate surface side, so that it has not only excellent gas barrier properties. It exhibits high adhesion to substrates such as plastics, but it also has excellent flexibility.
- Patent Document 3 Japanese Patent Application Laid-Open No. 2000-0 8 9 8 5 9
- the deposited film shown in Patent Document 3 still has problems to be improved. That is, a vapor deposition film having a layered structure in which an organic layer having a high carbon concentration is formed on the substrate surface side and an inorganic metal oxide layer having a high gas barrier property is formed on such an organic layer. For this reason, when this vapor deposition film is formed on the surface of a plastic container, the container is filled at a high temperature or at a relatively high temperature (50 to 60 ° C). When was stored, the metal in the deposited film eluted into the liquid content, resulting in a problem that the film thickness decreased.
- an object of the present invention is to provide a deposited film by a plasma CVD method that has not only good adhesion to a substrate but also excellent resistance to moisture, particularly an alkaline aqueous solution.
- Another object of the present invention is to provide a deposited film by plasma C V D method which is further excellent in heat resistance.
- the deposited film comprises a substrate side adhesive layer having a carbon concentration of 5 element% or more, and a carbon concentration. Is divided into a clear intermediate layer with less than 5 element% and a surface protective layer with a carbon concentration of 5 element% or more,
- the carbon (C) concentration is higher than the oxygen (O) concentration and the metal element (M) concentration, and the element ratio (which indicates the oxidation degree of the metal element (M) on the surface of the surface protective layer ( OZM) is 1.3 or less, and the binding energy of the metal element (M) is 1.0 eV or less smaller than the average value of the metal element binding energy in the pearly intermediate layer,
- the element ratio (O ZM) indicating the degree of oxidation of the metal element (M) is on average higher than 1.8 and not higher than 2.4. .
- a plastic pot having the deposited film formed on the inner surface.
- the concentration of each element on the surface of the surface protective layer, the element ratio (OZM) indicating the degree of oxidation of the metal element (M), and the bond energy of the metal element (M) are determined by an X-ray photoelectron spectrometer. It means the measured value when the depth from the surface is 0.3 nm. The fact that the measured values on the surface are not used avoids the influence of contamination, etc. Because. In the deposited film of the present invention,
- the substrate side adhesive layer has an element ratio (CZM) and an element ratio (OZM) of the following formulas: 0.2 to CZM 1.8
- the binding energy of the metal element (M) is in the range of 0.1 eV to 0.7 eV lower than the average value of the metal element (M) in the barrier intermediate layer. That there is a joint area,
- CZM element ratio
- the binding energy of the metal element (M) is gradually increased from the substrate side toward the inorganic region, and the maximum value of the binding energy of the metal element (M) is The difference from the minimum value is 0.1 e V or more,
- the vapor deposition film by the plasma CVD method of the present invention is formed by using an organometallic compound and an oxidizing gas as a reaction gas.
- a substrate is formed from the substrate side to the surface side.
- a side adhesive layer hereinafter simply referred to as an adhesive layer
- a barrier intermediate layer is formed.
- the barrier intermediate layer formed on the adhesive layer has a low carbon concentration of less than 5% by element and is a region mainly composed of metal element (M) oxide, that is, a region rich in inorganic properties.
- M metal element
- OZM element ratio
- the surface protective layer formed on the barrier intermediate layer has a carbon (C) concentration of oxygen (O) and an oxygen (O) concentration on its surface (that is, a portion having a depth of 0.3 nm from the outer surface of the deposited film).
- C carbon
- O oxygen
- O oxygen
- the binding energy of the metal element (M) is 1.0 eV or less smaller than the average value of the metal element binding energy in the barrier intermediate layer.
- the condition is satisfied. That is, the surface protective layer is a region having a higher degree of organicity than the barrier intermediate layer.
- the vapor deposition film of the present invention shows excellent resistance to an alkaline aqueous solution, as will be apparent from the examples described later.
- the metal element (M) does not elute into the alkaline aqueous solution, Therefore, a plastic bottle having such a vapor deposition film on its inner surface can be put to practical use as a container for mineral water or an alkaline beverage.
- an organic-inorganic composite region exhibiting organic and inorganic properties is formed in the vicinity of the barrier intermediate layer in the above-mentioned substrate-side adhesive layer.
- such an organic-inorganic composite region is represented by the f formula:
- the binding energy of the metal element (M) is in the range of 0.1 eV to 0.7 eV lower than the average value of the metal element (M) in the barrier intermediate layer. It is preferable that the change rate of each element concentration is adjusted. That is, by forming an organic-inorganic composite region that satisfies such conditions, the deposited film exhibits excellent heat resistance. For example, when such a vapor-deposited film is formed on the inner surface of a plastic bottle, even if the bottle is kept at a high temperature for a long time or the content liquid is hot filled in the bottle, the metal in the content liquid Almost no element elution occurs, and it is possible to effectively avoid a decrease in film thickness and a corresponding decrease in gas barrier properties. Therefore, like this A plastic bottle having a vapor-deposited film on which an organic / inorganic composite region is formed on its inner surface is particularly suitable as a container for warming and selling tea or the like.
- FIG. 1 is a diagram showing the elemental composition in the thickness direction of the deposited film of the present invention obtained in Example 1 and the binding energy of silicon.
- FIG. 2 is a diagram showing the structure of a plasma processing apparatus for forming a deposited film of the present invention.
- FIG. 3 is a diagram showing the element concentration in the thickness direction of the deposited film of Comparative Example 1 and the bond energy of the silicon element.
- Figure 4 shows the relationship between the CZO ratio of the deposited film surface and the amount of film thickness reduction.
- Fig. 5 shows the relationship between the C Si ratio on the surface of the deposited film and the amount of film thickness reduction.
- Figure 6 shows the relationship between the OSi ratio (oxidation degree) on the deposited film surface and the amount of film thickness reduction.
- FIG. 7 is a diagram showing the composition distribution of gay elements, oxygen, and carbon in the thickness direction of a deposited film (Experimental Example 1) having an organic-inorganic composite region in the adhesive layer.
- FIG. 8 is a diagram showing the element ratio (C / S i) between carbon and silicon in the thickness direction of the deposited film of FIG.
- FIG. 9 shows the area where the element ratio (CZS i) of carbon and silicon is in the range of 1.0 to 1 ⁇ 8 for the deposited films of Experimental Examples 1 and 2 and Comparative Experimental Examples 1 and 2
- FIG. 4 is a diagram showing a difference in metal element (S i) bond energy with a gas barrier film (corresponding to a barrier intermediate layer).
- FIG. 10 is a diagram showing the element composition and the bond energy distribution of the metal element (S i) in the thickness direction of the deposited film of Experimental Example 1.
- FIG. 11 is a diagram showing a composition distribution diagram of silicon, oxygen, and carbon in the thickness direction of the deposited film of Experimental Example 3.
- Figure 12 shows the elemental composition and metal element (S i) in the thickness direction of the deposited film of Experimental Example 3. It is a figure which shows the binding energy distribution of.
- FIG. 1 schematically shows the elemental composition (M, O, C) of the deposited film of the present invention (particularly prepared in Example 1 described later) measured by X-ray photoelectron spectroscopy.
- This deposited film is divided into three regions, that is, a surface protective layer X, a barrier intermediate layer Y, and an adhesive layer Z from the outer surface side toward the substrate surface. That is, the vapor deposition film of the present invention is formed on the surface of a predetermined substrate by a plasma CVD method using an organometallic compound and an oxidizing gas as a reaction gas. This vapor deposition film is formed on the organometallic compound.
- the derived metal elements (M), oxygen (O), and carbon (C) are distributed as shown in Fig. 1, and are divided into the above three regions according to the element concentration expressed on the basis of these three elements. Is done.
- key element (S i) is shown as the metal element (M).
- the adhesive layer Z formed on the substrate surface side is a region where (C) concentration is 5 element% or more, and this region is a highly organic region and exhibits high flexibility.
- the metal oxide layer formed by plasma CVD (the barrier compatible intermediate layer described below corresponds to this) is highly inorganic, has a high oxygen barrier property, and has low flexibility. It may lack adhesiveness.
- a highly organic adhesive layer has high flexibility and good adhesion to the substrate. Therefore, by forming the highly organic adhesive layer Z on the surface of the substrate, it is possible to effectively avoid a decrease in adhesion and adhesion, and particularly high adhesion or adhesion to a plastic substrate. Show.
- the carbon concentration (C) gradually increases toward the substrate surface side.
- the carbon concentration (C) is 20 element% or more.
- the increase is particularly suitable for improving the adhesion to the substrate.
- the concentrations of metal element (M) and oxygen (O) are increased accordingly. Decrease gradually.
- the barrier intermediate layer Y formed on the adhesive layer has a (C) concentration of less than 5 element%. Therefore, in this region, the combination of the metal element ( ⁇ ) and oxygen ( ⁇ ) The total concentration ( ⁇ + ⁇ ) is 95% elemental or more.
- this layer formed in the central part of the deposited film is a layer having a low organic property and rich in inorganic properties, and particularly has a high barrier property against oxygen.
- the barrier intermediate layer is mainly composed of a silicon oxide. Therefore, the deposited film of the present invention is particularly useful in the field of packaging materials such as plastic containers that require barrier properties against gases such as oxygen and carbon dioxide.
- the oxidation degree X of the metal element ( ⁇ ) is as follows:
- This degree of oxidation X is expressed by the element ratio ( ⁇ ) of oxygen ( ⁇ ) to metal element ( ⁇ ). When the degree of oxidation X is within the above range, it exhibits a high gas barrier property. If is outside the above range, the gas barrier properties will be reduced.
- the surface protective layer X located on the surface side of the deposited film is a region having a (C) concentration of 5 element% or more, and has a large amount of carbon and is rich in organicity as in the case of the adhesive layer ⁇ described above.
- the concentration of each element and the degree of oxidation of the metal element (M) on the surface of the deposited film existing in the surface protective layer X specifically, at a depth of 0.3 nm from the outer surface).
- the bond energy of x and metal element (M) must satisfy all of the following conditions (a) to (c).
- Carbon (C) concentration is higher than oxygen (O) concentration and metal element (M) concentration. That is, 00 and C> M.
- the oxidation degree X of the metal element (M) (that is, the element ratio OZM) is 1.3 or less.
- the binding energy of the metal element (M) must be 1.0 eV or more smaller than the average value of the metal element binding energy in the intermediate layer barrier region Y. That is, the above conditions indicate that the surface of the deposited film is carbon rich and extremely rich in organicity. Satisfying all of these conditions significantly improves the water resistance of the deposited film, in particular. Elution of the metal element (M) into the alkaline aqueous solution can be effectively suppressed, and if any of these conditions are not satisfied, the water resistance becomes unsatisfactory and Elution of metal element (M) becomes prominent.
- Example 1 As is clear from the experimental results of Example 1 and Comparative Example 1 described later, even if the conditions (a) and (c) are satisfied, the oxidation degree X of the metal element (M) on the surface is 1 .4 If exceeding 9 and 1.3 (if the condition (b) is not satisfied), decrease of the film due to elution of metal element (S i) when the deposited film is immersed in alkaline aqueous solution for a certain period of time While the amount is 3.4 nm (Comparative Example 1), when all of the conditions (a) to (c) are satisfied (Example 1), the amount of film reduction is 0.2 nm. It is understood that elution of the metal element (S i) is remarkably suppressed.
- the reason why the vapor deposition film of the present invention exhibits such excellent water resistance is probably the cause of a decrease in water resistance on the surface of the deposited film by satisfying all of the above conditions (a) to (c). This is probably because there are almost no oxygen atoms (O) or OH groups (silanol groups), and these oxygen atoms and OH groups are covered with a sufficiently thick surface protective layer.
- the above conditions (a) to (c) are satisfied on the vapor deposition film surface, and at the same time, as shown in FIG. As a result, the concentration of carbon (C) gradually increased, and the concentration of metal elements (M) such as Si and oxygen (O) decreased gradually.
- the concentration of carbon (C) was 40 elements. It is preferable that the region has a carbon (C) concentration of 40% by element or more, and preferably has a thickness of 5 nm or more. Surface like this By forming a region with a very high carbon (c) concentration on the side, a Paria uniform intermediate layer Y that has poor water resistance and is likely to cause elution of metal elements (M) such as silicon (si). It can be covered with a sufficiently thick surface protective layer X, remarkably improving water resistance, completely blocking water permeation, and effectively avoiding deterioration of gas barrier properties due to moisture. In the present invention, as can be understood from FIG.
- the concentration of each element changes substantially continuously at the interface portion where the layers X, Y and Z are adjacent to each other. That is, at these interface parts, the concentration of each element continuously decreases monotonously, which means that each layer X, Y, and z is formed in a body and clearly between adjacent layers. This means that a rough interface is not formed. Therefore, the vapor deposition film of the present invention does not cause separation between the layers, is extremely excellent in durability, and exhibits a stable barrier property for a long period against gases such as oxygen and moisture. .
- the surface protective layer X, the barrier intermediate layer Y, and the adhesive layer z are not present in the form of clear layers, and there is a clear interface between the layers. do not do. Therefore, the thickness of each region cannot be critically defined, but the thickness of the deposited film (total thickness of each region) is usually in the range of 4 to 500 nm, and the barrier intermediate layer Y is The adhesive layer Z should preferably have a thickness of about 0.2 nm or more. In the present invention, it is preferable that the surface of the surface protective layer X is roughened in order to improve the barrier property against moisture.
- the barrier property against moisture can be further improved.
- a rough surface can be formed, for example, by adjusting the degree of pressure reduction for the glow discharge and forming the glow discharge under a relatively high pressure when forming the deposited film.
- Figure 12 shows the elemental composition (M, O, C) and the binding energy of the metal element (M) of the deposited film (produced in Experimental Example 3 described later) measured by X-ray photoelectron spectroscopy. ing.
- the surface protective layer X described above is omitted in order to explain the function of the organic-inorganic composite region.
- the carbon element concentration gradually decreases from the interface portion with the substrate surface toward the barrier uniform intermediate layer Y, and the oxygen (O) concentration and the metal (M) Concentration gradually increases. In other words, it gradually shifts from a carbon rich region to a metal rich region. Therefore, as shown in FIG.
- an organic-inorganic composite region ⁇ having organic and inorganic properties is formed in the adhesive layer Z, and the surface protective layer X on the outer surface side of the region ⁇ is excluded.
- the portion becomes an inorganic region ⁇ rich in inorganicity, and the barrier intermediate layer described above exists in the inorganic region S.
- the above organic-inorganic composite region has an element ratio (CZM) and an element ratio (O / M) of the following formulas (1) and (2):
- the organic-inorganic composite region has a higher degree of oxidation (OZM) of the metal element (M) than the above-described inorganic region including the barrier intermediate layer Y) S (C / M ⁇ 0.2).
- OZM degree of oxidation
- the amount of carbon (C) to metal element (M) (CZM) is large, although it may be slightly lower.
- this organic / inorganic composite region) 8 is not as much as the carbon-based region existing in the vicinity of the substrate surface, but is a region richer in organicity than the inorganic region. It shows.
- the binding energy of the metal element ( ⁇ ) is 0.1 e V to 0.7 e V higher than the average value of the metal element ( ⁇ ) binding energy of the barrier intermediate layer ⁇ . It is in the low range.
- the value obtained by subtracting the metal element (M) binding energy of the organic-inorganic composite region from the average value of the metal element (M) binding energy in this barrier interlayer Y is the “binding energy difference with the barrier interlayer”.
- the bond energy between the metal element (M) and oxygen (O) is higher than the bond energy between the metal element (M) and carbon (C). Therefore, in the organic-inorganic composite region ⁇ containing more carbon (C) than the inorganic region ⁇ , the metal element ( ⁇ ) binding energy is lower than that in the inorganic region.
- the organic-inorganic composite region ⁇ contains a metal oxide having a high degree of oxidation so that the bond energy difference (1M) falls within the above range.
- the barrier intermediate layer ⁇ present in the inorganic region i8 exhibits a high gas barrier property, but has a defect of lack of flexibility and lacks adhesion to the substrate.
- the substrate is somewhat deformed due to expansion or the like, such an inorganic region X cannot follow the change of the substrate, and as a result, the adhesion with the substrate is impaired and the gas barrier property is lowered. End up.
- Such an inconvenience can be avoided by forming the adhesive layer Z having a high flexibility as described above.
- the adhesive layer is not impaired in flexibility, and at the same time, the adhesion to the substrate is improved. What should be done is that the unexpected advantage of improving the heat resistance of the deposited film is achieved.
- the region formed on the substrate side surface has an extremely high carbon concentration, and the bond energy difference M) with the gas barrier layer is 0.7 eV.
- Comparative Experiment Example 1 described later when such a vapor deposition film is formed on the inner surface of a PET bottle, when the bottle is filled with the contents liquid hot, the contents liquid is filled at room temperature. Compared to the above, the amount of metal element (caine) eluted into the content liquid is significantly increased.
- the metal element (M) in the inorganic region (or the barrier intermediate layer) formed on the organic region is easily liberated and eluted into, for example, the contents of the bottle. It is thought that it will end up.
- the metal element (M) since a certain amount of the metal element (M) is present in a highly oxidized form in the organic-inorganic composite region present in the adhesive layer, the inorganic region (or the barrier intermediate layer Y) ), But the movement of the organic-inorganic composite region at high temperature is much smaller than that of the organic region described above. For this reason, it is considered that the metal element (M) is not easily detached even at a high temperature, and as a result, excellent heat resistance is exhibited.
- the binding energy of the metal element (M) gradually increases from the substrate side toward the inorganic region (S). It is preferable that the difference between the maximum value and the minimum value of the binding energy of the metal element (M) is 0.1 eV or more.
- the above-described organic-inorganic composite region Of has an element ratio (CZM) and an element ratio (OZM) of the following formulas (1 a) and (2 a):
- Such regions include carbon (C) and metal elements (M).
- the metal element (M) has a higher level of oxidation (OZM). That is, by forming the organic-inorganic composite region a having a relatively high level of organic property and a metal oxide having a high degree of oxidation, the above-described adhesion retention effect and heat resistance improvement effect due to flexibility are achieved. Can be increased. In particular, even when the thickness of the organic / inorganic composite region ⁇ is reduced to about 0.2 to 5. O nm, the predetermined adhesion retention effect can be exhibited and the heat resistance improvement effect can be exhibited. It is very suitable to form Of.
- a substrate made of glass, various metals, or the like can be used, but a plastic substrate is most preferably used.
- plastics include thermoplastic resins known per se, such as low density polyethylene, high density polyethylene, polypropylene, poly 1-butene, poly 4 1-methyl 1 1 1-pentene, or ethylene, propylene 1-butene 4 -Polyolefins such as random or block copolymers of methyl olefins such as methyl-pentene, cyclic olefin copolymers, etc., ethylene vinyl acetate copolymer, ethylene vinyl alcohol copolymer, ethylene Ethylene such as vinyl chloride copolymer ⁇ Vinyl compound copolymer, polystyrene, acrylonitrile 'styrene copolymer, ABS, styrene resin such as methylstyrene' styrene copo
- polyamide polyethylene terephthalate, polybutylene terephthalate, polyethylene It may be a thermoplastic polyester such as naphthalate, polystrength-ponate, polyphenylene oxide, etc., a biodegradable resin such as polylactic acid, or a resin of any mixture thereof.
- the bottle includes a biaxial stretch blow molded bottle formed from a polyester such as polyethylene terephthalate.
- the present invention can be similarly applied to the above-mentioned polyester cups.
- the plastic substrate may be a gas barrier multilayer structure having the above-mentioned thermoplastic resin (preferably an olefin resin) as inner and outer layers and an oxygen-absorbing layer between these inner and outer layers.
- thermoplastic resin preferably an olefin resin
- oxygen-absorbing layer between these inner and outer layers.
- an organometallic compound and an oxidizing gas are used as a reaction gas.
- a hydrocarbon serving as a carbon source can be used in combination with them.
- an organosilicon compound is preferably used as the organometallic compound, but is not limited to the organosilicon compound as long as it reacts with an oxidizing gas to form a metal oxide.
- various compounds such as organoaluminum compounds such as trialkylaluminum, and other organic titanium compounds can be used.
- organic silicon compounds include hexamethyldisilane, vinyltrimethylsilane, methylsilane, dimethylsilane, trimethylsilane, jetylsilane, propylsilane, phenylsilane, methyltriethoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, ⁇ tramethoxysilane
- Organic silane compounds such as tetraethoxysilane, phenyltrimethoxysilane, methyltrimethoxysilane, and methyltriethoxysilane, octamethylcyclotetrasiloxane, 1,1,3,3-tetramethyldisiloxane, hexane
- An organosiloxane compound such as methyldisiloxane is used.
- aminosilane, silazane and the like can also be used.
- the above-mentioned organic metals can be used alone or in combination of two or more.
- silane (SiH 4 ) or silicon tetrachloride can be used in combination with the above-mentioned organic silicon compound.
- Oxygen or ⁇ ⁇ ⁇ is used as the oxidizing gas, and argon or helium is used as the carrier gas.
- hydrocarbons such as CH 4 , C 2 ⁇ 4 , C 2 H 6 , and C 3 H 8 may be used in addition to organic silicon compounds and organometallic compounds.
- a vapor-deposited film is formed on the surface of the substrate by the plasma C VD method in an atmosphere containing the reaction gas described above.
- Plasma CVD is a method of growing a thin film using gas plasma. Basically, a gas containing a raw material gas is discharged under a reduced electric pressure with a high electric field, decomposed, and generated. It consists of the process of depositing the material to be deposited on the substrate in the gas phase or through a chemical reaction on the substrate.
- the plasma state is realized by glow discharge.
- a method using a direct current glow discharge a method using a high frequency glow discharge, or a microwave discharge is used. The method of doing is known.
- the electron temperature is different from the gas ion temperature, and the electron temperature is a high temperature that has the energy necessary to carry out a chemical reaction, but the ion temperature is a low temperature thermal non-equilibrium state, which enables low temperature processes Obviously,
- the deposited film must be formed so as to form the region shown in FIG.
- reaction gas for example, supply of oxidizing gas compared to organometallic compounds
- the level of oxidative decomposition of the organometallic compound is low, and a polymer is formed.
- a region having a large amount of carbon for example, a region such as the surface protective layer X or the adhesive layer Z can be formed.
- the oxidative decomposition of the organometallic compound proceeds to a high level, so that a nearly complete metal oxide is formed.
- a region having a small amount of carbon that is, the barrier intermediate layer Y can be formed.
- a hydrocarbon as a carbon source can be supplied.
- each layer x to z by adjusting the reaction gas, the balance between the output of the microphone mouth wave and the supply amount of oxygen is taken into consideration so that the concentration of each element changes continuously and no interface is generated between the regions.
- the balance between the output of the microphone mouth wave and the supply amount of oxygen is taken into consideration so that the concentration of each element changes continuously and no interface is generated between the regions.
- the output of the glow discharge for example, if the glow discharge of plasma generation is generated at a low output, the surface protective layer X and the adhesive layer Z with a large amount of carbon can be formed. When glow discharge is performed at a high output, the barrier intermediate layer Y with a small amount of carbon can be formed.
- This output change method is based on the following principle.
- an organic silicon compound and an oxidizing gas form a silicon oxide film through the following reaction path.
- each layer X to Z by adjusting the glow discharge output, adjust the glow discharge output so that the concentration of each element changes continuously and no interface is created between each region. Must be continuously changed.
- the glow discharge for generating plasma is performed by a high-frequency electric field or a microwave electric field.
- the substrate to be processed is plastic
- glow discharge is performed with a high-frequency electric field
- the optimum conditions vary depending on the distance between the electrodes, etc., and cannot be specified in general.
- the glow discharge in the high output region is 1 O OW It is preferable to perform at the above output.
- the glow discharge at high output should be 9 OW or more.
- the above-described organic-inorganic composite region ⁇ is formed in the adhesive layer ⁇ ⁇ ⁇ by combining the above-described means based on the supply amount of the reactive gas and the means based on the glow discharge output, and the region Of It is possible to form an inorganic region ⁇ including a barrier intermediate layer ⁇ .
- HMDSO hexamethyldisiloxane
- oxidizing gas are in a quantity ratio of 0 2 / HMDSO (molar ratio) of about 8-12.
- the deposition film having the organic-inorganic composite region or in the adhesive layer Z can be formed by starting the formation of the deposition film by the plasma reaction at a low output while supplying the water and gradually increasing the output.
- glow discharge starts at about 30 W, the output is gradually increased, and when the output is 90 W or more, the inorganic region j8 on the organic-inorganic composite region Qf
- the barrier elemental intermediate layer Y with the highest degree of oxidation of the metal element (S i) and substantially no carbon (C) content is formed Is done.
- the optimum conditions differ depending on the distance between the electrodes, etc., and cannot be specified in general, but in general, by starting glow discharge at about 4 OW and gradually increasing the output,
- a rear intermediate layer ⁇ can be formed in the inorganic region ⁇ .
- the organic-inorganic composite region ⁇ should satisfy the above-mentioned formulas (1) and (2) by adjusting the output gradient and film formation time, or the formula (1
- the conditions of a) and (2a) can be satisfied.
- the organic-inorganic composite region can satisfy the above-mentioned formulas (1) and (2), and the thickness can be reduced to 0. It can be about 2 to 10 nm.
- the organic-inorganic composite region Of can be made a region satisfying the expressions (1 a) and (2 a).
- the thickness of such an organic non-organic composite region can be set to about 0 ⁇ 2 to 5.0 nm. However, if the output gradient is made steeper than necessary or the film formation time is made extremely short, the thickness of the organic-inorganic complex region a will be small and will immediately shift to the inorganic region ⁇ . The output gradient and deposition time should be adjusted so that the thickness is at least about 0.2 nm.
- the apparatus used for forming the vapor deposition film described above includes a plasma processing chamber containing a substrate to be processed, an exhaust system for maintaining the plasma processing chamber in a reduced pressure state, and a processing gas in the plasma processing chamber. And a treatment gas introduction system for introducing plasma and an electromagnetic wave introduction system for generating plasma in the plasma processing chamber.
- FIG. 2 An example of such an apparatus is shown in FIG. 2 using a microwave plasma processing apparatus as an example.
- the plasma processing chamber indicated by 10 as a whole is composed of an annular base 12, a cylindrical side wall 14, and a canopy 16 that closes the upper part of the cylindrical side wall 14. .
- a first exhaust hole 20 is formed in the central portion of the annular base 1 2, and the base
- An annular recess 22 is formed on the upper surface of 1 2 so as to surround the first exhaust hole 20, and an annular groove 24 is formed around the annular recess 22. 4 leads to the second exhaust hole 26.
- the annular recess 22 accommodates a bottle holder 30 that holds the pot 28 in an inverted state.
- the bottle holder 30 is fitted with the neck portion of the inverted bottle 28, and the neck portion of the bottle 28 held by the holder has the first exhaust hole 2
- the gas supply pipe 3 2 is inserted into the interior of the pot 28 through the neck of the pot 28 from the first exhaust hole 20.
- the cylindrical side wall 14 is provided with a microwave inlet 34, and a microphone mouth wave transmission member 36, such as a waveguide or a coaxial cable, is connected to the microphone mouth wave inlet 34. That is, a microwave is introduced into the plasma processing chamber 10 from a predetermined microphone mouth wave oscillator through the microphone mouth wave transmission member 36.
- the canopy 16 is provided with a cooling gas supply hole 40, so that the cooling gas is inverted in the plasma processing chamber 10 after the formation of the vapor deposition film or during the vapor deposition film formation.
- the bottle 2 held in the bottle is sprayed on the bottom of the bottle 8 so that it can be cooled.
- an O-ring 4 is provided at the interface between the base 12 and the cylindrical side wall 14 and at the interface between the cylindrical side wall 14 and the canopy 16, respectively. 2 is provided. Also, the bottle holder 30 is provided with an O-ring 42 for blocking the inside and the outside of the bottle 28.
- first exhaust hole 20 and the second exhaust hole 26 formed in the base 12 are respectively provided with shields 44 for microwave confinement. Further, for the microwave confinement, the base 12, the cylindrical side wall 14 and the canopy 16 are all made of metal.
- a processing chamber 10 is configured.
- the gas supply pipe 3 2 is inserted into the bottle 2 8 from the first exhaust hole 20, and the vacuum pump is driven to exhaust the interior of the bottle 2 8 by exhausting from the first exhaust hole 20. Maintain a vacuum.
- the inside of the plasma processing chamber 10 outside the bottle 28 is decompressed from the second exhaust hole 26 by a vacuum pump.
- the degree of decompression in the pot 28 is such that the degree of decompression is high such that a processing gas is introduced from the gas supply pipe 32 and a microwave is introduced to generate a glow discharge.
- a range of 5 0 0 Pa, particularly preferably 5 to 50 Pa is preferred.
- the degree of decompression in the plasma processing chamber 10 outside the pot 28 is such that no glow discharge occurs even when microwaves are introduced.
- the reaction gas is introduced into the bottle 28 through the gas supply pipe 32, and the microwave is introduced into the plasma processing chamber 10 through the microwave transmission member 36.
- the electron temperature in this plasma is tens of thousands of K, and the temperature of gas particles is about two orders of magnitude higher than that of several OOK, which is in a thermally non-equilibrium state. In contrast, plasma processing can be effectively performed.
- the microwave output for the above reactive gas or glow discharge is adjusted as described above, and the deposited film is formed in order from the inner surface of the bottle: adhesive layer Z, barrier property intermediate layer Y, and surface protective layer.
- the elemental composition is as shown in Fig. 1.
- the pressure inside the bottle 28 is increased to about 15 to 500 Pa, so that the surface of the surface protective layer X (that is, the surface of the deposited film) becomes rough and has a moisture blocking property. Can be increased.
- the introduction of the processing gas and the introduction of the microwave are stopped, and the cooling gas is introduced from the cooling gas supply hole 40, and the inside and outside of the bottle 28 are brought to normal pressure.
- the plasma treatment time differs depending on the inner surface area of the bottle to be treated, the thickness of the thin film to be formed, and the type of gas used for treatment, and cannot be specified in general.
- 1 More than one second is necessary for the stability of the plasma treatment, and a short time is required from the viewpoint of cost.
- the order of minutes is acceptable.
- the inner surface of the body of the bottle whose inner surface is coated with a vapor-deposited film is measured by the X-ray photoelectron spectrometer (Quantum2000) manufactured by PH I, and the composition distribution of each element in the depth direction of the film, oxygen, and carbon. The binding energy of was measured.
- Gay oxygen concentration and the oxygen concentration is corrected based on the fused silica (S i 0 2), with respect to the film thickness was inferred for convenience the same sputter rate and fused silica (S i 0 2).
- the concentration of each element and the elemental bond energy on the deposited film surface were shown as measured values at an acceleration voltage of 2 kV, a sputtering range of 3 mm X 3 mm, and a depth of 0.3 nm from the film surface.
- the expansion rate of the PET bottle (V2 V 1 X 100) was calculated.
- the oxygen permeation amount before and after the expansion of the PET bottle (under an atmosphere of 37 ° C and 100 o / o RH) was measured with an oxygen permeation measurement device (Modern Control, OX-TRAN). The change in oxygen permeation due to bottle expansion was evaluated as adhesion.
- a sintered stainless steel gas supply pipe having a porous structure with an outer diameter of 15 mm and a length of 150 mm is used.
- the bottle holder has a diameter of 28 mm, a barrel diameter of 64 mm, a height of 206 mm, and an internal volume of 520 m I.
- a cylindrical polyethylene terephthalate bottle (PET bottle) was installed, the vacuum level outside the bottle in the processing chamber was 7 kPa, and the vacuum level inside the pot was 10 Pa.
- 2.7 sccm of hexamethyldisiloxane (HMDSO) and 27 sccm of oxygen were introduced into the bottle, and then a 500 W pulsed microwave was oscillated from the microwave oscillator to perform plasma treatment.
- a deposition film composed of the adhesive layer Z and the pearly intermediate layer Y is formed by changing the microwave oscillation time. It was. Thereafter, the supply of oxygen gas was stopped and the inside of the bottle was replaced with an HMDSO atmosphere, and then the surface protective layer X was formed.
- the deposition time for each layer was 3 sec (layer Z), 5 sec (layer Y), and 3 sec (layer X), respectively.
- the resulting deposited film was measured for the compositional distribution in the depth direction of the silicon, oxygen, and carbon films and the Si binding energy, and is shown in FIG.
- the alkali concentration of each element concentration on the surface of the deposited film, the degree of oxidation x, the binding energy of silicon, the average silicon binding energy and the average oxidation degree X (element ratio OZS i) in the barrier intermediate layer Y were evaluated. The results are shown in Table 1 together with the results of (film reduction).
- Plasma treatment was performed in the same manner as in Example 1 to form a deposited film composed of the adhesive layer Z and the barrier intermediate layer Y. Thereafter, the supply of oxygen gas was stopped, and immediately, the surface protective layer X was produced between 0.5 sec, and then the atmosphere was released to complete the deposition film deposition.
- Figure 3 shows the composition distribution in the depth direction of the Ge, oxygen, and carbon films in this deposited film and the bond energy of the Ge element. Further, the concentration of each element on the deposited film surface, etc. The results are shown in Table 1.
- a vapor deposition film was formed in the same manner as in Example 1 except that the amount of oxygen supplied during the formation of the surface protective layer X was set to 2.7 scom, and the same analysis and evaluation as in Example 1 were performed. The results are shown in Table 1.
- Example 1 Except that the surface protective layer X was not formed, a deposited film was formed in the same manner as in Example 1, and the same analysis and evaluation as in Example 1 were performed. The results are shown in Table 1. Table 1
- Figures 4 to 6 show the relationship between the concentration ratio of the outer surface of the pottle manufactured under various conditions and the decrease in film thickness. From these results, when the concentration of each element on the outer surface satisfies C> 0, OS i, and the degree of oxidation X is 1.3 or less, it shows a good surface protection effect and has good strength resistance It was confirmed that In order to observe changes in heat resistance and adhesion when the organic-inorganic composite region 0? Was formed in the adhesive layer X, the following experimental examples and comparative experimental examples were performed.
- the organic-inorganic composite region is a region where the element ratio (C / S i) is in the range of 1.0 to 1.8.
- the organic / inorganic composite region a is a region having an element ratio (C / S i) in the range of 0.2 to 1.8.
- the pressure inside the bottle inside the processing chamber was 7 k Pa
- the pressure inside the pot was 10 Pa
- hexamethyldisiloxane (HMDSO) was used. 2.
- a pulsed microwave was oscillated from a microwave oscillator to perform plasma treatment.
- the organic-inorganic composite region Of and the inorganic region i8 including the gas barrier film are formed on the organic-inorganic composite region Of, and then the atmosphere is released to complete the deposition film formation. I let you.
- the gas barrier film corresponds to the barrier uniform intermediate layer Y in the present invention and has a C concentration of less than 5%.
- the microphone mouth wave intensity and the plasma treatment time in each region were 3 seconds at 35 W (organic-inorganic composite region) and 5 seconds at 600 W (inorganic region / S), respectively.
- FIG. 7 shows the composition distribution in the depth direction of the silicon, oxygen, and carbon films obtained by composition analysis in the deposited film.
- Figure 8 shows the elemental ratio (C S ⁇ ) between carbon and silicon in the depth direction of the film.
- the elemental ratio of carbon to cayenne (CZS i) in the organic-inorganic composite region where the element ratio of carbon to gay element (CZS i) is in the range of 1.0 to 1.8 is 1.0.
- the element ratio of oxygen to gay element (OZS ⁇ ) that is, the degree of oxidation was in the range of 2.2 to 2.4.
- the element ratio (C S i) between carbon and silicon in the organic / inorganic composite region was 0.2 or less.
- Fig. 9 shows the difference in bond energy (lM) between the gas barrier film (corresponding to the barrier intermediate layer Y) for silicon (S i) in the organic-inorganic composite region.
- Figure 10 shows the elemental composition in the thickness direction of the film and the bond energy distribution of the metal element (S i).
- the deposited film was evaluated for heat resistance and adhesion, and the evaluation of heat resistance is shown in Table 2 together with the range of the binding energy difference (lM) above, and the evaluation of adhesion is shown in Table 3. It was shown to.
- the element ratio of oxygen to silicon (O / S i in the organic-inorganic composite region where the element ratio of carbon to silicon (CS i) is in the range of 1.0 to 1.8) ) Ranged from 2.2-2.5.
- the element ratio (CZS ⁇ ) of carbon and key in the inorganic region S was 0.2 or less.
- Fig. 9 shows the difference in binding energy between the silicon (S) and the gas barrier film in the organic-inorganic composite region ⁇ .
- the plasma treatment time for the organic-inorganic composite region ⁇ was 5 seconds longer than in Experimental Example 1, and an inorganic region including a gas barrier film) 8 was formed on the organic-inorganic composite region ⁇ as in Experimental Example 1.
- a deposited film was prepared.
- the composition distribution in the depth direction of the silicon, oxygen, and carbon films by the composition analysis method in the film is shown in Fig. 11.
- the element composition in the depth direction and the bonding of the metal element (S i) The energy distribution is shown in Fig. 12.
- the element ratio of oxygen to silicon (OZS i) that is, the degree of oxidation, in the organic-inorganic composite region where the element ratio of carbon to silicon (CZS i) is in the range of 0.2 to 1.8. Ranged from 1.9 to 2.2.
- the elemental ratio of carbon to kaen (CZS i) in the inorganic region was less than 0.2.
- the element ratio of oxygen to gate element (OZS i) in the organic inorganic region 0 where the element ratio of carbon to gate element (C / S i) is in the range of 1.0 to 1.8 That is, the degree of oxidation was in the range of 1.9 to 2.2.
- the element ratio (CZS i) between carbon and gay elements in the inorganic region (8) was 0.2 or less.
- Figure 9 shows the bond energy difference (CdM) between the gas barrier film and the gate element (Si) in the organic-inorganic composite region.
- the deposited film was evaluated for heat resistance and shown in Table 2 together with the range of the binding energy difference.
- a deposited film was prepared in exactly the same manner as in Experimental Example 1, except that the microwave region was 600 W and the organic region and the inorganic region were formed together for 8 seconds.
- the element ratio of oxygen to Ge (OZS i) that is, the degree of oxidation is 2 in the organic-inorganic composite region in which the element ratio of carbon to Ge (CS ⁇ ) is in the range of 1.0 to 1.8 The range was 2 to 2.5.
- the element ratio (C / S i) between carbon and silicon in the inorganic region 8 was 0.2 or less.
- Fig. 9 shows the difference in bond energy (lM) between the gas barrier film and Ge (Si) in the organic-inorganic composite region.
- the element ratio (CZS i) in the organic-inorganic composite region is in the range of 0.2 to 1.8. From the results in Table 2, when the Si bond energy in the organic-inorganic composite region is 0.1 to 0.7 eV lower than the bond energy in the gas barrier film (region where the C concentration is less than 5%) (In other words, when the bond energy difference is in the range of 0.1 to 0.7 eV), the adhesion film with the substrate should have a good balance of inorganic and organic components and exhibit good heat resistance. I understand.
- the adhesion film with the substrate is mainly composed of organic components, and the heat resistance is low. You can see that it is inferior.
- the element ratio (CZS ⁇ ) in the organic-inorganic composite region Of is in the range of 0.2 to 1.8. From the results shown in Table 3, when the range of bond energy difference (lM) with the gas barrier film is in the range of 0.1 to 0.7 eV, the adhesion film with the substrate has a balance of inorganic and organic components. It can be seen that it exists well and shows good adhesion. When the range of bond energy difference (lM) with the gas barrier film is smaller than the range of 0.1 to 0.7 eV, the adhesion film with the substrate is mainly composed of inorganic components, Is inferior.
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Description
Claims
Priority Applications (4)
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CN2006800134442A CN101163817B (zh) | 2005-02-22 | 2006-02-07 | 采用等离子体cvd法的蒸镀膜 |
US11/884,772 US7906217B2 (en) | 2005-02-22 | 2006-02-07 | Vapor deposited film by plasma CVD method |
EP20060713568 EP1852522B1 (en) | 2005-02-22 | 2006-02-07 | Vapor deposited film by plasma cvd method |
AU2006216352A AU2006216352A1 (en) | 2005-02-22 | 2006-02-07 | Vapor deposited film by plasma CVD method |
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JP2005-045015 | 2005-02-22 | ||
JP2005045015A JP4747605B2 (ja) | 2005-02-22 | 2005-02-22 | プラズマcvd法による蒸着膜 |
JP2005-137982 | 2005-05-11 | ||
JP2005137982 | 2005-05-11 |
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US (1) | US7906217B2 (ja) |
EP (1) | EP1852522B1 (ja) |
KR (1) | KR20070110883A (ja) |
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WO (1) | WO2006090602A1 (ja) |
Cited By (10)
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US20100136331A1 (en) * | 2007-04-27 | 2010-06-03 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Transparent barrier film and method for producing the same |
US20110189450A1 (en) * | 2008-08-19 | 2011-08-04 | Lintec Corporation | Formed article, method for producing the same, electronic device member, and electronic device |
US20120040107A1 (en) * | 2009-04-09 | 2012-02-16 | Sumitomo Chemical Company, Limited | Gas-barrier multilayer film |
US8219011B2 (en) | 2007-02-26 | 2012-07-10 | Konica Minolta Business Technologies, Inc. | Intermediate transfer member and image formation apparatus |
US8771834B2 (en) | 2010-09-21 | 2014-07-08 | Lintec Corporation | Formed body, production method thereof, electronic device member and electronic device |
US8846200B2 (en) | 2010-09-21 | 2014-09-30 | Lintec Corporation | Gas-barrier film, process for producing same, member for electronic device, and electronic device |
US8865810B2 (en) | 2009-03-26 | 2014-10-21 | Lintec Corporation | Formed article, method for producing same, electronic device member, and electronic device |
US9365922B2 (en) | 2009-05-22 | 2016-06-14 | Lintec Corporation | Formed article, method of producing same, electronic device member, and electronic device |
US9540519B2 (en) | 2010-03-31 | 2017-01-10 | Lintec Corporation | Formed article, method for producing same, electronic device member, and electronic device |
US9556513B2 (en) | 2010-08-20 | 2017-01-31 | Lintec Corporation | Molding, production method therefor, part for electronic devices and electronic device |
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JP5275543B2 (ja) * | 2005-08-31 | 2013-08-28 | 株式会社吉野工業所 | 高いバリア性を有する合成樹脂製容器 |
US8906492B2 (en) * | 2009-03-17 | 2014-12-09 | LÌNTEC Corporation | Formed article, method for producing the formed article, member for electronic device, and electronic device |
US20140012115A1 (en) | 2012-07-03 | 2014-01-09 | Medtronic Minimed, Inc. | Plasma deposited adhesion promoter layers for use with analyte sensors |
DE102014219979A1 (de) * | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verbund aus Substrat, plasmapolymerer Schicht, Mischschicht und Deckschicht |
DE102016114292A1 (de) * | 2016-08-02 | 2018-02-08 | Khs Corpoplast Gmbh | Verfahren zum Beschichten von Kunststoffbehältern |
JP6261682B2 (ja) * | 2016-08-09 | 2018-01-17 | 住友化学株式会社 | 電子デバイスの製造方法 |
KR102578827B1 (ko) | 2018-04-24 | 2023-09-15 | 삼성전자주식회사 | 유연한 유무기 보호막 및 그 제조방법 |
US20220338768A1 (en) | 2021-04-09 | 2022-10-27 | Medtronic Minimed, Inc. | Hexamethyldisiloxane membranes for analyte sensors |
DE102022105041A1 (de) * | 2022-03-03 | 2023-09-07 | IonKraft GmbH | Beschichtungstechnik für Kunststoffbehälter |
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- 2006-02-07 AU AU2006216352A patent/AU2006216352A1/en not_active Abandoned
- 2006-02-07 EP EP20060713568 patent/EP1852522B1/en not_active Expired - Fee Related
- 2006-02-07 WO PCT/JP2006/302426 patent/WO2006090602A1/ja active Application Filing
- 2006-02-07 US US11/884,772 patent/US7906217B2/en not_active Expired - Fee Related
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Cited By (12)
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US8219011B2 (en) | 2007-02-26 | 2012-07-10 | Konica Minolta Business Technologies, Inc. | Intermediate transfer member and image formation apparatus |
US20100136331A1 (en) * | 2007-04-27 | 2010-06-03 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Transparent barrier film and method for producing the same |
US20110189450A1 (en) * | 2008-08-19 | 2011-08-04 | Lintec Corporation | Formed article, method for producing the same, electronic device member, and electronic device |
US9340869B2 (en) * | 2008-08-19 | 2016-05-17 | Lintec Corporation | Formed article, method for producing the same, electronic device member, and electronic device |
US8865810B2 (en) | 2009-03-26 | 2014-10-21 | Lintec Corporation | Formed article, method for producing same, electronic device member, and electronic device |
US20120040107A1 (en) * | 2009-04-09 | 2012-02-16 | Sumitomo Chemical Company, Limited | Gas-barrier multilayer film |
US9011994B2 (en) * | 2009-04-09 | 2015-04-21 | Sumitomo Chemical Company, Limited | Gas-barrier multilayer film |
US9365922B2 (en) | 2009-05-22 | 2016-06-14 | Lintec Corporation | Formed article, method of producing same, electronic device member, and electronic device |
US9540519B2 (en) | 2010-03-31 | 2017-01-10 | Lintec Corporation | Formed article, method for producing same, electronic device member, and electronic device |
US9556513B2 (en) | 2010-08-20 | 2017-01-31 | Lintec Corporation | Molding, production method therefor, part for electronic devices and electronic device |
US8771834B2 (en) | 2010-09-21 | 2014-07-08 | Lintec Corporation | Formed body, production method thereof, electronic device member and electronic device |
US8846200B2 (en) | 2010-09-21 | 2014-09-30 | Lintec Corporation | Gas-barrier film, process for producing same, member for electronic device, and electronic device |
Also Published As
Publication number | Publication date |
---|---|
EP1852522A1 (en) | 2007-11-07 |
US20090148633A1 (en) | 2009-06-11 |
KR20070110883A (ko) | 2007-11-20 |
EP1852522A4 (en) | 2010-08-04 |
AU2006216352A1 (en) | 2006-08-31 |
EP1852522B1 (en) | 2013-04-24 |
US7906217B2 (en) | 2011-03-15 |
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