WO2006049533A2 - Dispositifs rayonnants et procedes de fabrication correspondants - Google Patents

Dispositifs rayonnants et procedes de fabrication correspondants Download PDF

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Publication number
WO2006049533A2
WO2006049533A2 PCT/RU2005/000543 RU2005000543W WO2006049533A2 WO 2006049533 A2 WO2006049533 A2 WO 2006049533A2 RU 2005000543 W RU2005000543 W RU 2005000543W WO 2006049533 A2 WO2006049533 A2 WO 2006049533A2
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WO
WIPO (PCT)
Prior art keywords
radiation
substrate
luminescent
radiation source
phosphor
Prior art date
Application number
PCT/RU2005/000543
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English (en)
Russian (ru)
Other versions
WO2006049533A3 (fr
Inventor
Mikhail Evgenjevich Givargizov
Original Assignee
Mikhail Evgenjevich Givargizov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from RU2004132352/09A external-priority patent/RU2004132352A/ru
Priority claimed from RU2004132553/28A external-priority patent/RU2004132553A/ru
Priority claimed from RU2004132988/28A external-priority patent/RU2004132988A/ru
Application filed by Mikhail Evgenjevich Givargizov filed Critical Mikhail Evgenjevich Givargizov
Publication of WO2006049533A2 publication Critical patent/WO2006049533A2/fr
Publication of WO2006049533A3 publication Critical patent/WO2006049533A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the invention relates to the field of lighting, radiating elements, microelectronics elemental base, manufacturing technology of electronic devices, creating high-performance solid-state light sources.
  • the present invention allows to solve these problems, offering along with the design and manufacturing technology, which will improve production efficiency.
  • the present invention proposes the construction of a radiating device including a radiation source containing a substrate and located on it at least one transition between sections of semiconductor materials with different conductivity or various compounds, a luminescent converter containing a substrate and a phosphor material, conductive and insulating electric current elements elements reflecting and refracting radiation, the luminescent converter and the radiation source may have direct contact or connection through an air gap.
  • a radiation source containing a substrate and located on it at least one transition between sections of semiconductor materials with different conductivity or various compounds
  • a luminescent converter containing a substrate and a phosphor material conductive and insulating electric current elements elements reflecting and refracting radiation
  • the luminescent converter and the radiation source may have direct contact or connection through an air gap.
  • there may be at least one more source of exciting and / or reference radiation, and at least one more luminescent converter.
  • direct contact between the luminescent converter and the radiation source can be realized due to mechanical clamping of one to the other.
  • the mechanical clamp can be realized by connecting at least a part of the substrate of the luminescent transducer free from the phosphor material, at least part of the substrate of the radiation source, free from materials of semiconductors, through at least one additional material.
  • Direct contact between the luminescent transducer and the radiation source can be made in the form of a eutectic of at least one phosphor material with at least one transition material.
  • a radiating device which may comprise a radiation-transparent substrate having first and second surfaces opposite to each other, a radiation source having first and second surfaces opposite to each other, containing at least one transition between portions of semiconductor materials with different conductivity or different compounds, and located with its first surface on the first surface of the substrate, the phosphor material located on the second surface dlozhki conducting and insulating elements of an electric current, radiation reflective and refractive elements comprises a phosphor material which has a columnar structure and in direct contact with the substrate material. At least part of the space between the columns of the phosphor structure in such a device can be filled with metal material.
  • a radiating device which may contain a radiation-transparent substrate having first and second surfaces opposite to each other, a radiation source having first and second surfaces opposite to each other, containing at least one transition between sections of semiconductor materials with different conductivity or different compounds, located with its first surface on the first surface of the substrate, the phosphor material of the luminescent converter, located on the second surface of the substrate, the elements conducting and insulating the electric current, the elements reflecting and refracting radiation, may differ in that it includes luminescent phosphor material a transducer located on the second surface of the radiation source.
  • Such a device may comprise at least one luminescent converter with a columnar phosphor structure.
  • they can have at least one film electrode and at least one more luminescent converter, and direct contact between the luminescent converter and the radiation source can be realized by mechanical pressing of one to the other, and direct contact between the luminescent converter and the radiation source can be made in the form of a eutectic of at least one phosphor material with at least one mother transition scrap.
  • the present invention proposes a flat emitting device, which may include a substrate on which at least two radiation sources are located, each of which contains at least one transition between sections, materials of semiconductors with different conductivities or different compounds, at least at least one substrate with at least one luminescent converter, elements conducting and insulating electric current, elements reflecting and refracting radiation, and at least at least between one luminescent converter and at least one radiation source there may be a thin film radiation transparent electrode, and said luminescent converter has direct contact with this electrode on one side thereof, and said radiation source has direct contact with this electrode on the other his side.
  • the device also has a system of plane-parallel isolated from each other electrodes located mutually perpendicular to another system of plane-parallel isolated from each other electrodes, and at least two transitions between sections of semiconductor materials with different conductivity or different compounds can be located between these systems.
  • the electrodes of one of these systems can be made of a semiconductor material, and at least one of the semiconductor electrodes is a layer or layers that (they) are formed in the formation of a transition (ov) between sections of semiconductor materials with different conductivities or different compounds, and the indicated (e) layer (s) may belong to at least two sources of radiation.
  • the device described above may comprise at least one luminescent converter with a columnar phosphor structure.
  • at least one of these contacts in it can be made in the form of a eutectic of the materials participating in it.
  • the present invention also provides a planar emitting device, which may include a main substrate having first and second opposing surfaces, at least two radiation sources are located on the first surface of the substrate, each of which may contain at least one transition between sections of materials of semiconductors with different conductivity or various compounds, phosphor material, conductive and insulating elements, reflecting and refracting radiation e elements, and its difference may be that it contains at least one electrode that can have contact with at least two radiation sources located on the first surface of the main substrate, and which is located on a heat-conducting dielectric substrate and the phosphor material can be located on the second surface of the main substrate.
  • the phosphor material can be a luminescent converter, that is, it is previously made on an additional substrate.
  • This device may include at least one luminescent converter. Also in such a device, the contact of the electrode with at least two radiation sources can be through an additional conductive layer.
  • the device may have a system of plane-parallel electrodes isolated from each other, located mutually perpendicular to another system of plane-parallel electrodes isolated from each other, and at least two transitions between sections of semiconductor materials with different conductivity or different compounds can be located between these systems.
  • the electrodes of one of these systems can be made of semiconductor material, and at least one of the semiconductor electrodes can be a layer or layers that are (they) in the formation of the transition (ov) between sections of materials of semiconductors with different conductivity or different compounds, moreover, the indicated (e) layer (s) can (be) belong to at least two radiation sources.
  • the described device may contain at least one luminescent Converter with a columnar structure of the phosphor. When e At least one of the indicated contacts can be made in the form of a eutectic of the materials participating in it. Also, the device in question may include means for addressing the radiation source.
  • a radiating device which may include a radiation source containing a substrate and at least one transition between portions of semiconductor materials with different conductivity or different compounds, a phosphor material of a luminescent converter located on the second surface of the substrate, conductive and insulating, located on it electric current elements reflecting and refracting radiation elements may differ in that the luminescent converter and sources radiation can have direct contact with each other.
  • the phosphor material in such a device may have a columnar structure, and at least a portion of the space between the columns of the phosphor structure may be filled with metallic material, and there may be electrical contact between at least one layer of the radiation source and said metallic material.
  • the present invention also provides a flat emitting device, which may include a main substrate having first and second opposing surfaces, at least two radiation sources are located on the first surface of the substrate, each of which may contain at least one transition between sections of materials of semiconductors with different conductivity or different compounds, the phosphor material of the luminescent converter, conductive and insulating electric current elem nts, reflecting and refracting radiation elements, moreover, such a device may contain at least one electrode, which can be in contact with at least two radiation sources located on the first surface of the main substrate, and which is a conductive material placed on the luminescent converter.
  • the phosphor material can be made in the form of a columnar structure, wherein the space between the columns of the phosphor structure and / or the surface of the columnar structure can be filled with said conductive material, so that parts of such a structure are combined into strips that are mutually parallel to each other.
  • the present invention provides a method of manufacturing a radiating device, which may include forming a radiation source, the formation of a luminescent transducer, the formation of conductive and insulating elements, the formation of reflecting and refracting radiation elements, and the application of a luminescent transducer can be carried out directly on the radiation source or through an air gap, moreover, the connection can be through sections of the proprietary substrate materials in contact with each other, at least through one additional material. It is also contemplated that at least one luminescent transducer is superimposed on at least one radiation source.
  • the present invention also provides a method for manufacturing a flat emitting device with signal addressing, which includes generating at least two radiation sources, forming at least one luminescent transducer, forming conductive and insulating elements, forming reflective and refractive elements, at least one luminescent transducer is applied to at least one radiation source through transparent to radiation film electrode.
  • a film transparent to radiation can be formed on the luminescent converter by applying a conductive film to the phosphor material.
  • the method of manufacturing the device the overlay may be due to the eutectic connection of at least two materials involved in the connection, and the contact of such a connection may be heated.
  • FIG. 1 Prior art.
  • the film light source proposed in [1].
  • FIG. 2a Prior art.
  • 2b Prior art.
  • FIG. 3 Prior art.
  • FIG. 4 Prior art.
  • a light source based on a column phosphor proposed in [4]. 10 - LED, 20 - immersion layer, 30 - glass substrate, 40 - columnar phosphor, 50 - opaque conductive material with which the spaces between the columns of the phosphor are filled.
  • FIG. 5 a, b, c, d - Radiating device Various combinations of the relative positions of the substrate with the luminescent converter and the substrate with the radiation source. 1 - luminescent converter, 2 - substrate of the luminescent converter, 3 - substrate of the radiation source, 4 and 6 - layers of the radiation source, 5-
  • FIG. 6a Radiating device with two radiation sources. 1 - luminescent converter, 2 - luminescent converter substrate, Za, b
  • FIG. 6b Radiating device with two luminescent converters. la, b - luminescent converters, 2a, b - substrates of luminescent converters, 3 - substrate of the radiation source, 4 and 6 - layers of the radiation source, 5
  • FIG. 6c Radiating device with two luminescent converters and two radiation sources.
  • b - luminescent converters 2a, b - substrates of luminescent converters, Za, b - substrates of a radiation source, 5a, b
  • FIG. 7c An example of the formation of a radiating device.
  • Al is the formation of the luminescent converter on the substrate
  • Bl is the formation of the radiation source on the substrate with electrical leads
  • Cl is the formation of the material reflecting radiation
  • Dl is the formation of the emitting device
  • El is the finished emitting device.
  • FIG. 7b An example of the formation of a radiating device with two radiation sources.
  • A2 - formation of a luminescent converter on a substrate B2 - formation of radiation sources on a substrate with electrical leads, C2 - formation of a radiating device, D2 - ready-made radiating device.
  • FIG. 8 a, b, c - A variant of the implementation of stage "Dl" on the example of a point light source.
  • FIG. 9 An example of a flat emitting device with radiation addressing.
  • FIG. 10 An example of a technology for creating a radiation source for a flat emitting device with radiation addressing.
  • 3 a substrate of radiation sources, 4 - a layer of several radiation sources simultaneously, made of a semiconductor material and which is an electrode of a system of plane-parallel electrodes isolated from each other, 5 - a transition between layers of radiation sources, 18 and 19 - gaps between elements of adjacent radiation sources, 20 - a system of electrical leads of semiconductor electrodes, 21 - a system of plane-parallel electrodes isolated from each other, 2 G - positions that will occupy plane-parallel isolated d from the other electrodes when applying a luminescent transducer to the matrix of radiation sources, Yl-Y5 and X1-X4 - electrical output systems for systems of mutually perpendicular electrodes 4 and 18.
  • FIG. 11 Example of a flat emitting device with radiation addressing.
  • FIG. 12 Radiating device. 1 - luminescent transducer, 2 - substrate of the luminescent transducer, 3 and 4 - layers of the radiation source, 5 - transition between the layers of the radiation source, 6 - electrode reflecting the radiation, 7 - integrated radiation.
  • FIG. 13 ac Radiating device.
  • la, b, c are luminescent converters
  • 2a, b, c are substrates of luminescent converters and a radiation source
  • 3 and 4 are layers of a radiation source
  • 5 is a transition between layers of a radiation source
  • 7a-c is integrated radiation at different stages of its formation.
  • FIG. 15 a, b - Flat emitting device with signal addressing 1 — luminescent transducer, 2 — substrate of the luminescent transducer, 3 — layer of a radiation source, 8 — substrate with radiation sources, 11 — reflective plane-parallel electrodes supplying electric current to radiation sources, 12 — substrate of reflective plane-parallel electrodes, 13 and 14 — electrical leads for electrodes, 14a - electrical leads from a soft material (alloy).
  • FIG. 16 Fragments of a flat emitting device with signal addressing and color rendering, (i) - (i ⁇ ) - the steps of forming a substrate with radiation sources.
  • 3 and 5a-c are the layers of the radiation source corresponding to the layers of the triad RGB, 8 is the substrate with the radiation sources,
  • FIG. 17 Flat emitting device with signal addressing and color reproduction.
  • 15a, b and 16 are directions of overlapping parts of a flat emitting device.
  • FIG. 20 Flat emitting device with signal addressing.
  • FIG. 21 Fragment of a flat emitting device with signal addressing. 3 - the substrate of the radiation source, 4 and b - the layers of the radiation source, 12 and 12a - the gaps between the conductive materials (for example, semiconductor).
  • a phosphor with any structure 1 on a substrate 2 in a luminescent converter (Fig. 5 a-d), for example, a columnar, powder or film phosphor structure.
  • the luminescent converter will work most efficiently with a column phosphor. Therefore, considering further examples of designs and manufacturing technology of emitting devices, we will mean precisely a column phosphor as the basis for the manufacture of a luminescent converter.
  • the technology for creating a columnar luminescent structure is described in [5].
  • the radiating elements of the device can be made on a quartz, sapphire substrate, a substrate of silicon carbide, silicon and other materials 3, more or less convenient for epitaxial deposition of a layer of semiconductor material 4, which is a component of a homojunction or heterojunction 5 (the boundaries between materials with different conductivity or various compounds, hereinafter referred to as “junction”), which is formed with another layer 6.
  • These transitions can be made of semiconductor materials materials under taken from the group of compounds A 1 and B VI A W B V.
  • in the present invention are considered, including complex compound transitions, alternating one after another. Such compounds can generate radiation in a wide range: from ultraviolet to infrared.
  • a material 7 that reflects all the generated radiation in one direction for increase efficiency. If there is a luminescent transducer 1 in the path of the entire flux (including reflected) of the generated radiation, then part of such radiation (for example, with wavelengths of 260-270 nm), called the exciting one, will be converted to radiation with a different length (for example, to radiation with wavelength 560-590nm - this is converted radiation) waves by generating the latter in the phosphor material. Part of the radiation (for example, 470nm) will pass through the luminescent converter without change. Such radiation is called reference. It, together with the converted radiation (excited in the phosphor material), will give the total integral (total) radiation 8 (which, in the considered version, a first approximation, can give white color).
  • any suitable phosphor can be used as the phosphor material.
  • it can be represented by both the Stokes and anti-Stokes phosphors in their chemical composition.
  • various variants of such a design of the radiating device are possible (Fig.
  • luminaire we mean a combination of elements: the phosphor material + transparent (for the frequencies / radiation wavelengths considered in the present invention) substrate on which the phosphor material is located.
  • radiation source we mean a set of elements: transitions (made of semiconductor materials taken from the groups of compounds A 1 B ⁇ and A 111 B v ) + substrate on which these transitions are located.
  • radiation we mean any combination between the primary (excited and reference) and converted radiation, such as “excitable and / or reference and / or converted) radiation.
  • the present invention provides a design variant when two radiation sources of different composition and characteristics can be used in one radiating device, as shown in figures ba and 6b. Or two different in composition and characteristics of the luminescent transducer, as shown in figures 6b and 6c. In any of these cases, obtaining the total integrated radiation 8 by superimposing the intermediate integral radiation 10a and 1Ob, which in turn was a consequence of the primary integral radiation 9a and 9b.
  • the advantage of the design according to the present invention is that the number of additional materials that are encountered in the path of the beneficial propagation of radiation is minimized: there is no adhesive composite (an organic-based gel that polymerizes at temperatures of about 80-90 degrees, becoming darker, i.e. less transparent ) for fixing the powder of the luminescent converter on the junction, no immersion layer for connecting (fixing) the substrate of the luminescent converter on the substrate of the source radiation.
  • the luminescent converter and the radiation source are in direct contact with each other or through an air gap.
  • the relative position of the luminescent Converter and the radiation source can be any, as shown in figures 5 c-d.
  • step Dl depicted in FIG. 7a as one of the steps (the same C2 for FIG. 7b), and in FIG. 8a in detail the manufacturing technology of a point light source.
  • a prepared source (position I) containing two electrodes 13a, b with leads isolated from each other by the material of the insulator 14 is fixed to a radiation source with contact electrode leads 12a, b of semiconductor layers forming a transition or transitions (position II).
  • contact electrode leads 12a, b of semiconductor layers forming a transition or transitions position II.
  • a contact is formed between the terminals 12a, b and the electrodes 13a, b (according to their designations).
  • the fixing (hereinafter referred to as the "coefficient") of the radiation source on the substrate, the parts of which are, therefore, the electrodes 13a, b, can be done through a conventional adhesive bond.
  • the eutectic will be the best connection option: the radiation source is lowered onto the heated composition of the composite metal composite 15 (for example, gold + indium) located on the l ⁇ b electrode. Electrodes 13a, b. They are also reflectors of the generated radiation.
  • the next step (position III) is the application of a luminescent transducer to the radiation source.
  • the best connection method is also eutectic: the compound material 16 connects the edge of the luminescent converter substrate, free of the phosphor material, to the electrode 13 a.
  • connection (fixing) of the radiation source on the substrate the parts of which are, therefore, the electrodes 13a, b in some cases may not be produced, dispensing only with the connection of a luminescent converter.
  • the luminescent converter will simply mechanically press the radiation source. This option is interesting in the case of direct contact between the luminescent converter and the radiation source, without an air gap.
  • Part of the phosphor material will diffuse into the material of one of the transition layers and, accordingly, vice versa.
  • An even greater effect of the connection can be achieved by increasing the temperature of the materials, or rather their contact, where the eutectic should occur.
  • the proposed design option allows you to solve one of the most pressing problems facing the creators of solid-state light sources.
  • the essence of this problem lies in the fact that the design “transition + luminescent converter)) during operation is heated to temperatures at which its efficiency is significantly reduced.
  • One of the reasons for heating is the internal reflection of the radiation generated in the transition at the semiconductor – bonding gel – phosphor boundaries.
  • the reduction in the number of material boundaries, as well as the “removal of other boundaries in other”, which is actually provided by the eutectic connection, provide an increase in the efficiency of such a radiating device.
  • the advantage of the technology proposed in the present invention for creating a radiating device and devices based on it is also that the luminescent converter layer can be adjusted to within a few nanometers. This is possible due to the fact that this layer is manufactured separately by its technology [5]. Moreover, the entire process of creating such a layer takes 2-3 hours of technological time, which fits well into the technological chain of creating light sources.
  • the present invention also provides a display in the form of a flat emitting device design with signal addressing.
  • a schematic diagram of such a device in a partially disassembled form is shown in Figure 9.
  • a substrate 3 for example, silicon carbide or sapphire
  • plane-parallel strips of thin films 4 are made of a semiconductor material (for example, GaN).
  • These strips are electrically isolated from each other by a gap 18.
  • layers of material 6 are semiconducting (for example, InGaN) and form a junction with layer 4 (in this case, a heterojunction). Between the individual fragments of layer 6 there is a gap 19, which makes such fragments electrically isolated.
  • a single electric flat bus (film) 2V to part of such fragments of layer 6, then we will be able to apply voltage to the entire line of such fragments.
  • Such a flat busbar is shown 21 located on the inside of the luminescent transducer.
  • step (i) by means of lithography (or another known method), a strip system of semiconductor material 4 is created on the substrate with a gap of 18. Then, in step (ii), fragments of another semiconductor layer are deposited by means of lithography 6, with a gap 19. Finally, at the stage (iii), the electrodes of the terminals 20 and 21 are formed. For the final formation of the emitting device, a luminescent conversion is applied to the radiation source formed according to the previous steps ovatel (FIG. 11).
  • the proposed design option allows you to solve one of the most pressing problems: heat removal from the radiation source. Warming up is due to internal reflection of part of the radiated energy. Heat can be removed to a greater extent by a body having a single-crystal structure. Such is the columnar phosphor, since the single-crystal structure has phonon thermal conductivity. Moreover, according to manufacturing technology [5], space between the columns can be filled with metal, which will largely determine the efficiency of heat removal from the radiation source.
  • a very effective embodiment of the present invention is to use the entire radiation flux generated by the radiation source (i.e., any semiconductor junction). This is achieved by placing the luminescent transducer both on one side of the radiation source (Fig. 12) and on the other (Fig. LZa-s).
  • the present invention also provides a display in the form of a planar emitting device, comprising means for addressing a signal to a radiation source and, as a result of this addressing, radiation from this source.
  • a display in the form of a planar emitting device comprising means for addressing a signal to a radiation source and, as a result of this addressing, radiation from this source.
  • the schematic diagram of such a device in a partially disassembled form is depicted in figure 14a.
  • a substrate 8 for example, silicon carbide or sapphire
  • plane-parallel strips of thin films 3 are made of a semiconductor material (for example, GaN). These strips are electrically isolated from each other by a gap 9. Thus, they form the first system of mutually insulated plane-parallel electrodes.
  • Layers of material 4 which is semiconducting (for example, InGaN), and forming transition 5 together with layer 3 (in this case, heterojunction) are fragmentarily located on such bands. Between the individual fragments of layer 4 there are gaps 10, which makes such fragments electrically isolated. If we now impose on a part of such fragments of layer 6 a single electric flat bus 11, perpendicular to the strips 3 of the system described above, then we will be able to apply voltage to the entire line of such fragments.
  • the combination of such flat busbars located on a separate substrate forms a second system of mutually insulated plane-parallel electrodes. Each of the electrode systems has corresponding terminals 13 and 14.
  • the luminescent converter is located on the reverse side of the substrate 8 of the radiation sources relative to the substrate 12 with the electrodes 11. If the electrodes 11 are massive and placed on a heat-conducting dielectric substrate (for example, silicon carbide, sapphire, polycor or ceramic), then such an electrode system will perform the function of heat removal from radiation sources and the entire radiating devices.
  • the indicated electrode system also acts as a reflector of the primary radiation (exciting and reference) generated by the radiation sources in the direction of the luminescent converter.
  • the present invention proposes the following.
  • the material from which the layers 17 are made, part of the material of the electrodes 14a and the material of the electrodes 11 can have a composition that provides tight contact when applying 16 of the substrate 12 with the electrodes 11 to the substrate 8 with radiation sources, despite the possible deviation from the ideal plane of the substrates 8 and 12 or deviation from the ideal plane of the surface of the layers 17.
  • the specified composition should contain “soft” metals (for example, In or Ga). This may be material represented by a metal eutectic (e.g., Au + In).
  • the present invention involves the use of any already known design to provide external conclusions for the layers 17.
  • the present invention also provides a full-color display based on the design of a flat emitting device containing means for addressing a signal to a source.
  • One of the options for implementing the design of such a display involves the use of radiation sources with different frequencies of the primary radiation (excited and reference). For each such source, the corresponding composition of the luminescent converter is selected. Selecting the radiation sources accordingly, they are assembled into a triad according to the “red-green-blue” formula (hereinafter referred to as the “RGB triad”) and a corresponding matrix is created. A variant of the formation of such a matrix is shown in figure 16.
  • the full-color of such a display is realized through addressing to each radiation source the magnitude of the current and / or voltage, respectively distributing the intensity of the primary radiation so that the RGB triad 7b (in this case, three nearby light sources combined to form a color in one pixel) forms the desired color .
  • the RGB triad 7b in this case, three nearby light sources combined to form a color in one pixel
  • the metal in the space between the columns acts as an electrode for electrical contact with one of the layers of the heterostructure - the radiation source.
  • This fact greatly simplifies the assembly technology of the final product.
  • the electrical contact is realized due to the contact of metal 9 and 9a (Fig. 18 a, b) located on the surface of the column of phosphor 1, or metal 9 (Fig. 19 a, b), in which the columns of the phosphor structure are immersed, with the material of the radiation source . This contact is output through terminal 10 from the indicated layers 9.
  • the present invention also provides a display in the form of a planar emitting device, comprising means for addressing a signal to a radiation source and, as a result of this addressing, radiation from this source. Addressing is carried out through a system of plane-parallel isolated from each other electrodes located in parallel planes with another system of plane-parallel isolated from each other electrodes, so that the electrodes of one system are mutually perpendicular to the electrodes of another system, and at least two transitions between sections are located between these two systems semiconductor materials with different conductivities or different compounds. According to the present invention, one of the electrode systems is implemented by combining the columns 1 (Fig.
  • this material is layer 4 involved in the formation of junctions with sections of the semiconductor material of layer b with different conductivity or other compounds.
  • the strips of the layer 6 are made with gaps 12a, and the width of the strips of the layer 6 is obviously less than the width of the strips of the material 9 (Fig. 20).

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  • Computer Hardware Design (AREA)
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Abstract

Cette invention concerne des structures de dispositifs rayonnants à homojonctions ou hétérojonctions, de dispositifs rayonnants plats à adressage de signaux et de dispositifs reposant sur ceux-ci. Cette invention relève également du domaine de l'éclairage, des éléments rayonnants, des diodes électroluminescentes, des composants modulaires microélectroniques, des techniques de fabrication de dispositifs électroniques et de la création de sources de lumière à l'état solide hautement efficaces.
PCT/RU2005/000543 2004-11-05 2005-11-03 Dispositifs rayonnants et procedes de fabrication correspondants WO2006049533A2 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
RU2004132352 2004-11-05
RU2004132352/09A RU2004132352A (ru) 2004-11-05 2004-11-05 Излучающее устройство, способ его изготовления, устройства на его основе и способ его изготовления
RU2004132553 2004-11-10
RU2004132553/28A RU2004132553A (ru) 2004-11-10 2004-11-10 Излучающие устройства
RU2004132988/28A RU2004132988A (ru) 2004-11-12 2004-11-12 Излучающий элемент
RU2004132988 2004-11-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119034A1 (fr) * 2008-03-26 2009-10-01 Panasonic Corporation Dispositif émetteur de lumière à semiconducteur
WO2010046125A2 (fr) 2008-10-24 2010-04-29 Giesecke & Devrient Gmbh Elément de sécurité avec élément visuel sensible à la pression

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