WO2005114281A3 - Method for fabricating three-dimensional photonic crystals using a single planar etch mask and deep reactive-ion/plasma etching - Google Patents
Method for fabricating three-dimensional photonic crystals using a single planar etch mask and deep reactive-ion/plasma etching Download PDFInfo
- Publication number
- WO2005114281A3 WO2005114281A3 PCT/US2004/021567 US2004021567W WO2005114281A3 WO 2005114281 A3 WO2005114281 A3 WO 2005114281A3 US 2004021567 W US2004021567 W US 2004021567W WO 2005114281 A3 WO2005114281 A3 WO 2005114281A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voids
- dimensional photonic
- fabricating
- ion
- plasma etching
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Abstract
A three dimensional photonic crystal including a matrix formed of a contiguous solid material and method of manufacturing. The matrix surrounds a plurality of substantially spherical voids. The voids are arranged in a predetermined pattern which forms a plurality of planar layers. These plurality of layers are stacked so that the voids in each layer are aligned to form vertical columns with voids from at least a subset of the other layers. The voids in each vertical column have openings between adjacent voids in the column.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48483303P | 2003-07-03 | 2003-07-03 | |
US60/484,833 | 2003-07-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005114281A2 WO2005114281A2 (en) | 2005-12-01 |
WO2005114281A3 true WO2005114281A3 (en) | 2006-02-23 |
Family
ID=35276978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/021567 WO2005114281A2 (en) | 2003-07-03 | 2004-07-06 | Method for fabricating three-dimensional photonic crystals using a single planar etch mask and deep reactive-ion/plasma etching |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2005114281A2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
JP2001074954A (en) * | 1999-08-31 | 2001-03-23 | Nippon Telegr & Teleph Corp <Ntt> | Production of three dimensional photonic crystal structure |
US6274293B1 (en) * | 1997-05-30 | 2001-08-14 | Iowa State University Research Foundation | Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom |
US20020062782A1 (en) * | 2000-11-28 | 2002-05-30 | Norris David J. | Self-assembled photonic crystals and methods for manufacturing same |
JP2002314194A (en) * | 2001-04-17 | 2002-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Photonic crystal laser |
-
2004
- 2004-07-06 WO PCT/US2004/021567 patent/WO2005114281A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
US6274293B1 (en) * | 1997-05-30 | 2001-08-14 | Iowa State University Research Foundation | Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom |
JP2001074954A (en) * | 1999-08-31 | 2001-03-23 | Nippon Telegr & Teleph Corp <Ntt> | Production of three dimensional photonic crystal structure |
US20020062782A1 (en) * | 2000-11-28 | 2002-05-30 | Norris David J. | Self-assembled photonic crystals and methods for manufacturing same |
JP2002314194A (en) * | 2001-04-17 | 2002-10-25 | Nippon Telegr & Teleph Corp <Ntt> | Photonic crystal laser |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 20 10 July 2001 (2001-07-10) * |
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 02 5 February 2003 (2003-02-05) * |
VENKATARAMAN ET AL.: "Fabrication of 3D silicon photonic crystal structures using conventional micromachining technology", MICROMACHINING TECHNOLOGY FOR MICRO-OPTICS AND NANO OPTICS II : PROCEEDINGS OF SPIEP, vol. 5347, January 2004 (2004-01-01), Bellingham USA, XP002354493 * |
Also Published As
Publication number | Publication date |
---|---|
WO2005114281A2 (en) | 2005-12-01 |
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