WO2005100637A1 - 液処理装置および液処理方法 - Google Patents
液処理装置および液処理方法 Download PDFInfo
- Publication number
- WO2005100637A1 WO2005100637A1 PCT/JP2005/006120 JP2005006120W WO2005100637A1 WO 2005100637 A1 WO2005100637 A1 WO 2005100637A1 JP 2005006120 W JP2005006120 W JP 2005006120W WO 2005100637 A1 WO2005100637 A1 WO 2005100637A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing
- liquid
- liquid supply
- processing liquid
- nozzles
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 519
- 238000011282 treatment Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000000126 substance Substances 0.000 claims abstract description 102
- 238000007599 discharging Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims description 446
- 230000008569 process Effects 0.000 claims description 68
- 238000003672 processing method Methods 0.000 claims description 20
- 238000010129 solution processing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 52
- 239000000243 solution Substances 0.000 description 46
- 238000005530 etching Methods 0.000 description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 21
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 10
- 238000012993 chemical processing Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000012487 rinsing solution Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to an apparatus and a method for supplying a processing liquid to a processing target such as a semiconductor wafer and an LCD glass substrate to perform processing.
- a processing liquid is immersed in a processing object such as a semiconductor wafer or an LCD glass substrate in a processing tank in which a processing liquid such as a chemical solution or a rinsing liquid is stored. Liquid processing such as etching processing or cleaning processing is performed while supplying the liquid into the processing tank.
- JP10-229065A discloses a liquid processing apparatus that alternately discharges a processing liquid from a processing liquid discharge port disposed at an opposite corner of a processing tank that stores an object to be processed. First, the processing liquid discharged from the processing liquid disposed at one corner is discharged. Then, a convection of the processing liquid occurs in the processing tank, and the particles flow on the convection and are discharged from the processing tank on the overflowing processing liquid. At this time, a stagnation portion of the processing liquid having a low flow rate is generated in the processing tank, and particles may stagnate there. Before the particles accumulate, the discharge of the processing liquid from the processing liquid discharge port at one corner is stopped, and the processing liquid discharger at the other corner also starts discharging the processing liquid.
- the convection newly generated in the processing tank due to the discharge of the processing liquid of the other discharge locus is different from the convection generated in the processing tank due to the discharge of the processing liquid of the other discharge loca. Collision causes the turbulent flow of the processing liquid generated thereby to move the processing liquid in the staying portion.
- the transferred processing liquid flows on the newly generated convection, and is discharged from the processing tank on the overflowing processing liquid. In this way, by periodically removing the staying portion, the liquid processing is performed while preventing the particles from re-adhering to the object to be processed.
- JP6-204201A discloses a liquid processing apparatus for supplying a chemical solution into a processing tank for accommodating an object to be processed, performing a chemical liquid process, and then supplying a rinsing liquid into the processing tank to perform a rinsing process. It has been.
- the processing liquid is supplied into the processing tank from two supply nozzles arranged at the bottom of the processing tank. After performing the chemical treatment, the rinsing liquid is supplied from the supply nozzle to cause the chemical liquid in the processing tank to overflow, whereby the chemical liquid in the processing tank is replaced with the rinsing liquid, and the rinsing processing is continuously performed.
- An object of the present invention is to enable uniform liquid processing of an object to be processed.
- Another object of the present invention is to enable uniform chemical treatment of an object to be processed.
- Another object of the present invention is to quickly replace a chemical solution in a treatment tank with a rinse solution after the chemical solution treatment.
- the present invention provides a liquid processing apparatus for performing liquid processing on a processing object, a processing tank capable of storing a processing liquid and the processing object, A plurality of processing liquid supply nozzles arranged at different heights on the sides of the object to be processed, each having a discharge port facing the object to be processed housed in the processing tank; A plurality of processing liquid supply valves for controlling the supply of the processing liquid to the processing liquid supply nozzles, and one or more processing liquid supply nozzles selected from the plurality of processing liquid supply nozzles respectively during a plurality of processing liquid supply periods
- the processing liquid supply state of at least one processing liquid supply nozzle of the plurality of processing liquid supply nozzles is set so that the processing liquid is supplied from the plurality of processing liquid supply nozzles during each processing liquid supply period and the immediately preceding processing liquid supply period.
- the plurality Providing a liquid processing apparatus characterized by comprising: a controller port over La is controlled on the basis of the operation of the physical fluid supply valve in a predetermined sequence.
- the plurality of processing liquid supply nozzles are divided into a first group and a second group, and the plurality of processing liquid supply nozzles belonging to the first group are processed.
- a plurality of processing liquid supply nozzles belonging to the second group are arranged at different heights on one side of the body, and are arranged at different heights on the other side of the object.
- the plurality of processing liquid supply nozzles are located at such a position that there is a processing liquid supply nozzle belonging to the second group located at the same height as each processing liquid supply nozzle belonging to the first group. Are arranged in a relationship.
- an object to be processed may be treated using a chemical solution as the treatment liquid.
- the controller simultaneously controls the first and second groups of processing liquid supply nozzles located at the same height. The operation of the plurality of processing liquid supply valves may be controlled so as to discharge the chemical liquid.
- the controller is configured to discharge the processing liquid supply nozzle force belonging to the first group and the same height during at least a part of the processing liquid supply periods of the plurality of processing liquid supply periods. No chemical liquid is supplied from the processing liquid supply nozzles belonging to the second group located at! And a state where the treatment liquid supply nozzle capillar belonging to the second group is discharged and the treatment liquid supply nozzle capper belonging to the first group located at the same height is not supplied.
- the operation of the plurality of processing liquid supply valves may be controlled so as to be repeated alternately.
- the object to be treated may be treated using a rinse as the treatment liquid.
- the controller discharges the processing liquid supply nozzles belonging to the first group and discharges the liquid at the same height.
- the operation of the plurality of processing liquid supply valves may be controlled so that the chemical liquid is not supplied from the processing liquid supply nozzle capillaries belonging to the second group.
- the object to be treated may be treated using a rinsing liquid as the treatment liquid.
- the controller is disposed at the lowermost position after the processing liquid supply nozzle disposed at the lowermost side of the plurality of processing liquid supply nozzles disposed at different heights discharges the rinsing liquid.
- Processing solution supply nose The processing liquid supply valve may be configured to control the processing liquid supply valve so that the nozzle and one or more processing liquid supply nozzles selected from the other processing liquid supply nozzles discharge the rinse liquid.
- all the processing liquid supply nozzles are controlled.
- the processing liquid supply valve is controlled to discharge the rinsing liquid.
- the object to be treated may be treated using a chemical solution diluted with a rinsing liquid as the treatment liquid.
- the processing liquid supply source includes a chemical liquid supply source and a rinsing liquid supply source, and a chemical liquid supply pipe connected to the chemical liquid supply source includes the rinsing liquid supply source and the plurality of processing liquids.
- a flow control device that joins a processing liquid supply pipe connecting the liquid supply nozzle and that adjusts a flow rate of a chemical liquid flowing out of the chemical supply pipe to the processing liquid supply pipe; Adjusting the flow rate adjusting device in accordance with the flow rate of the processing liquid supplied to the plurality of processing liquid supply nozzles to adjust the concentration of the chemical component contained in the processing liquid. It is configured to remain substantially constant. More preferably, the controller may be configured such that the number of processing liquid supply nozzles that discharge the processing liquid during a certain processing liquid supply period is equal to the number of processing liquid supply nozzles during another processing liquid supply period subsequent to the one processing liquid supply period.
- the processing liquid supply valve is configured to control the processing liquid supply valve so as to be different from the number of the processing liquid supply nozzles that discharge the processing liquid. Processing solution that discharges a processing solution such that the concentration of the processing solution flowing through the supply line becomes equal to the concentration of the processing solution flowing through the processing solution supply line during the other processing solution supply period.
- the flow control device is configured to be controlled according to the number of supply nozzles.
- the flow rate adjusting device may be configured so as to be able to block outflow of the chemical solution from the chemical solution supply pipeline to the processing solution supply pipeline, whereby the chemical solution diluted with the rinsing solution may be used. And the liquid treatment using only the rinsing liquid can be selectively executed.
- the present invention provides processing from one or more processing liquid supply nozzles selected from a plurality of processing liquid supply nozzles installed in a processing tank and each having a discharge port facing the object to be processed.
- a liquid processing method comprising: discharging a treatment liquid; and thereafter, changing a discharge state of the processing liquid from at least one processing liquid supply nozzle of the plurality of processing liquid supply nozzles. I will provide a.
- a processing liquid is supplied from a processing liquid supply nozzle card disposed at a different height during different processing liquid supply periods.
- the processing liquid is supplied from the processing liquid supply nozzle disposed on one side of the object to be processed, the processing liquid is disposed on the other side of the object to be processed. Processing liquid The processing liquid is supplied from the supply nozzle cap.
- the present invention further provides a step of immersing the object to be treated in a treatment tank in which a chemical solution is stored to perform the chemical solution treatment, and a step of supplying a rinsing liquid into the treatment tank to perform the rinsing treatment of the object to be treated.
- a rinsing step of replacing the chemical solution in the processing tank with a rinsing liquid wherein the rinsing step includes a plurality of rinsing steps that are installed in the processing tank and each have a discharge port facing the object to be processed.
- the treatment liquid supply nozzle arranged on one side of the object to be treated and the treatment liquid supply nozzle arranged on the other side of the object to be treated are arranged.
- the rinsing liquid is supplied from the processing liquid supply nozzle.
- the processing liquid supply nozzle arranged at the lowermost side of the plurality of processing liquid supply nozzles is a rinsing liquid. After discharging the rinsing liquid, all the processing liquid supply nozzles discharge the rinsing liquid.
- all the processing liquid supply nozzles of the plurality of nozzles are disposed at the lowest position after discharging the rinsing liquid.
- the processed processing liquid supply nozzles discharge the rinsing liquid, and then all processing liquid supply nozzles discharge the rinsing liquid.
- the present invention is further directed to a recording medium on which software that can be executed by a control computer of the liquid processing apparatus is recorded.
- a recording medium is provided, wherein a control computer controls the liquid processing apparatus to execute a liquid processing method according to the present invention.
- FIG. 1 is a piping diagram showing a piping system of a liquid processing apparatus according to a first embodiment of the present invention, together with a schematic sectional view of a processing tank.
- FIG. 2 is a schematic plan view of the processing tank shown in FIG. 1.
- FIG. 3 is a schematic cross-sectional view showing a chemical solution supply state in a chemical solution treatment process of the solution treatment method according to the present invention.
- FIG. 4 is a piping diagram showing a changed part of the liquid processing apparatus according to the second embodiment of the present invention from the first embodiment.
- FIG. 5 is a schematic cross-sectional view showing a chemical supply state in another chemical treatment process of the liquid treatment method according to the present invention.
- FIG. 7 is a piping diagram showing a changed part of the liquid processing apparatus according to the third embodiment of the present invention from the first embodiment.
- FIG. 10 is a schematic cross-sectional view showing a state in which a rinsing liquid is supplied in still another rinsing liquid processing process of the liquid processing method according to the present invention.
- valves 21R, 22R, 23R, 24R, 21L, 22L, 23L, and 24L are also referred to as valves 20 when there is no need to distinguish between them.
- Each knob 20 can be opened and closed and its opening degree can be adjusted.
- the liquid processing apparatus further includes on-off valves 35 and 35A as switching means for switching the nozzle 10 to supply DHF or DIW as a processing liquid.
- the liquid processing apparatus further includes a control computer 50 having a central processing unit 5 (hereinafter, “CPU5” t) as a controller for controlling the operations of the processing liquid supply valve 20 and the opening / closing valves 35, 35A. You.
- a wafer boat 2 having a holding rod 2a for holding a plurality of wafers W, for example, 50 wafers, in a vertical posture and in a row in a horizontal direction, is provided so as to be able to move up and down. It has been.
- the plurality of wafers W held by the wafer boat 2 are accommodated in the processing tank 1 by lowering the wafer boat 2.
- the liquid processing apparatus has a processing liquid supply source 3 including a pure water (rinse liquid) supply source 30 and a chemical liquid supply source 32.
- the processing liquid supply pipe 4 that supplies the processing liquid toward each processing liquid supply nozzle 10 is connected to the pure water supply source 30.
- the treatment liquid supply pipe 4 is connected to a chemical supply pipe 31 connected to a chemical supply source 32.
- the processing liquid supply pipe 4 branches into a pipe 4R for the right nozzle and a pipe 4L for the nozzle on the left, and each of the pipes 4R and 4L further branches into a plurality of branch pipes 41.
- Each branch pipe 41 is connected to each processing liquid nozzle 10.
- Each of the branch conduits 41 is provided with one of the treatment liquid supply valves 20 (see also FIG. 2) and a flow meter 6 (not shown in FIG. 2). Based on a control signal from the control computer 50, each valve 20 is opened and closed, and the opening of each valve 20 is adjusted as needed.
- the opening / closing valves 35 and 35A constitute processing liquid switching means.
- the opening and closing valves 35 and 35A are opened and closed based on a control signal from the control computer 50.
- HF flows from the chemical supply line 31 to the processing solution supply line 4 and joins the DIW flowing therethrough, whereby DHF is supplied to the nozzle 10 as the processing solution.
- the gas supply line 36 is connected to the N gas supply source 34 and the on-off valve 35.
- control software may be stored in a management computer that controls the control computer 50 of each liquid processing apparatus.
- each liquid processing device is operated by the management computer via the communication line, and executes a predetermined liquid processing process.
- FIGS. 4 and 7 show only the CPU 5 of the control computer for simplification of the drawing, a control computer having the same configuration as that shown in FIG. 1 is actually shown. (50) is provided.
- a plurality of, for example, 50 wafers W held by wafer transfer means are delivered to the wafer boat 2, the wafer boat 2 is lowered, and the wafers W are stored in the processing tank 1 in advance. Immerse in DHF.
- valve 20 is switched as follows to execute the chemical liquid processing process. .
- the opening and closing valve 35 is closed to stop the supply of the chemical solution. Then, the rinsing liquid processing process is executed by switching the processing liquid supply valve 20 as follows so that different supply states of the processing liquid (DIW) are realized in different periods.
- DIW processing liquid
- valves 21R and 21L are opened, DIW is discharged as the lowermost nozzle 11R and 11L rinsing liquid, and the first rinsing liquid processing step is performed. Executed for a predetermined time. Thereafter, as shown in FIG. 8 (b), the valves 21R and 21L are opened. While maintaining the pressure, the valves 22R, 23R, 24R, 22L, 23L and 24L were opened, and DIW was discharged from all nozzles 11R, 12R, 13R, 14R, 11L, 12L, 13L and 14L, and the second Is performed for a predetermined time. Thus, the rinsing liquid treatment process is performed while replacing DHF in the treatment tank 1 with DIW while overflowing the DHF and DIW from the treatment tank 1.
- valves 21R and DIW is discharged only from the lowest nozzles 11R and 11L with 21L opened, and valves 21R and 21L are opened as shown in Fig. 9 (b) in the subsequent second rinsing liquid treatment stage.
- the valves 22R, 23R, and 24R are opened, and DIW is discharged from the lowermost nozzle 11L on the left and all the nozzles 11R, 12R, 13R, and 14R on the right to discharge the processing tank.
- the rinsing liquid treatment process may be performed while the liquid in 1 overflows.
- the rightmost lowermost nozzle 11R and the leftmost nozzle 11R DIW may be discharged from all nozzles 11L, 12L, 13L and 14L.
- the collision of the DIW flow does not occur in the space between the adjacent wafers W, so that the DIW flow smoothly flows in the space between the adjacent wafers W. Exit space. Therefore, the rinsing liquid treatment process can be performed efficiently. Also in this case, even if DIW is discharged at a large flow rate in the second rinsing liquid processing stage, the wafer W is unlikely to be lifted.
- DIW may be discharged from all 21R, 22R, 13R, 14R, 11L, 12L, 13L and 14L.
- the DIW discharge time is sufficient to discharge the DHF remaining in each of the processing liquid supply nozzles 10 and the pipeline upstream of the processing liquid supply nozzles 10 as well. Eliminating the remaining DHF in advance enables efficient DIW replacement.
- the force of simultaneously discharging DHF from the left and right nozzles 10 at the same height in each of the chemical solution treatment stages is not limited to this.
- DHF may be supplied simultaneously from the left and right supply nozzles at different heights in the stage, or DHF may be simultaneously supplied from one or more supply nozzles 10 only on the left side or only on the right side in a certain chemical treatment step. It may be ejected.
- the chemical solution treatment process may be performed by using the supply nozzles 10 only on the left side or only on the right side and switching these nozzles 10 as appropriate!
- the plurality of processing liquid supply nozzles 10 are used, and at least each processing liquid supply period (each processing stage) and the immediately preceding processing liquid supply period Since the processing liquid supply state of one nozzle 10 is different (in this example, the discharge state is changed from the discharge state to the non-discharge state or vice versa), the state of the processing liquid flow during each processing liquid supply period is changed. Changes, which allows for rapid liquid processing with high uniformity.
- FIG. 4 is a piping diagram illustrating a part of the liquid processing apparatus according to the second embodiment that is different from the liquid processing apparatus according to the first embodiment. Portions of the liquid processing apparatus according to the second embodiment that are not shown in FIG. 4 are the same as those of the liquid processing apparatus according to the first embodiment, and thus illustration and description are omitted.
- a plurality of, for example, 50 wafers W held by wafer transfer means are delivered to the wafer boat 2, the wafer boat 2 is lowered, and the wafers W are stored in the processing tank 1 in advance. Immerse in DHF. Thereafter, under the control of the control computer 50, the processing liquid supply valves 20 are sequentially opened and closed as follows to perform processing.
- valves 21R and 21L are opened, DHF is discharged from the lowest supply nozzles 11R and 11L, and the first chemical processing step (first etching processing step) is performed.
- first etching processing step is performed for a predetermined time
- the valves 21R and 21L are closed, only the valves 22R and 22L are opened, and the DHF is also discharged from the second nozzles 12R and 12L from the bottom, so that the second etching is performed.
- the chemical processing step (second etching processing step) is performed (see FIG. 5 (b)).
- valves 22R and 22L are closed, only valve 23L is opened, and the left DHF is also discharged from the third nozzle 13L from the bottom, and the third chemical processing step (third etching processing step) is executed (see FIG. 5 (c)).
- the valve 23L is closed, only the valve 23R is opened, and DHF is discharged from the third nozzle 13R from the lower right, and the fourth chemical solution process is performed.
- the step (fourth etching step) is performed (see FIG. 5D).
- the supply nozzles 11R and 11L are discharged in the first etching processing step (see FIG. 6 (a)).
- the supply nozzles 12R and 12L are discharged (see FIG. 6 (b)).
- the supply nozzle 13L is discharged (see FIG. 6 (c)).
- Discharge from the supply nozzle 14R during the etching step see Fig. 6 (d)
- discharge from the supply nozzle 14L during the fifth etching step see Fig. 6 (e)
- the sixth etching step Perform the etching process by sequentially discharging from nozzle 13R (see Fig. 6 (f)).
- the switching valve device 37 has two open / close valves 37a and 37b. Although it was possible to adjust the flow rate in two stages, three or more stages could be achieved by adding a bypass line to the chemical supply line and providing at least three on-off valves in the switching valve device. You can make adjustments.
- FIG. 7 is a piping diagram illustrating a part of the liquid processing apparatus according to the third embodiment that is different from the liquid processing apparatus according to the first embodiment. Portions of the liquid processing apparatus according to the third embodiment that are not shown in FIG. 4 are the same as those of the liquid processing apparatus according to the first embodiment, and thus illustration and description are omitted.
- the first flow meter 39a detects the flow rate of DIW flowing through the processing liquid supply pipe 4 and transmits it to the control computer (CPU 5). Is detected by the flow meter 39b and transmitted to the control computer. Based on the DIW flow rate detected by the first flow meter 39a, the control computer previously stores in the control computer an HF flow rate necessary for setting the concentration of DHF supplied to the supply nozzle 10 to a predetermined value.
- the opening degree of the flow rate adjusting valve 37A is feedback-controlled using the detection signal of the second flow meter 39b. This keeps the DHF concentration constant regardless of the 3 ⁇ 4HF flow rate.
- the chemical treatment process is a so-called DHF cleaning process, but is not limited thereto, and may be another chemical cleaning process.
- Other chemical cleaning processes include APM cleaning process using NH OH, HC1 and H 2 O
- the rinsing treatment was performed under the following conditions.
- DIW is discharged from the two lowest supply nozzles 11R and 11L at a total flow rate of 40 LZmin for 2 minutes, and then the six processing liquid supply nozzles 12R, 13R, 14R, 12L, 13L and 14L DIW was discharged at a total flow rate of 90 LZmin.
- DIW was discharged at a total flow rate of 40 LZmin from two processing liquid supply nozzles (corresponding to 11R and 11L) arranged at the bottom of the processing tank.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/540,762 US20060060232A1 (en) | 2004-04-15 | 2005-03-30 | Liquid treatment device and liquid treatment method |
JP2006512292A JP4403177B2 (ja) | 2004-04-15 | 2005-03-30 | 液処理装置および液処理方法 |
CN2005800113530A CN1942606B (zh) | 2004-04-15 | 2005-03-30 | 液体处理装置和液体处理方法 |
EP05727891A EP1736568A4 (en) | 2004-04-15 | 2005-03-30 | LIQUID TREATMENT DEVICE AND LIQUID TREATMENT PROCESS |
US12/403,286 US8652344B2 (en) | 2004-04-15 | 2009-03-12 | Liquid treatment method and storage system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-119810 | 2004-04-15 | ||
JP2004119810 | 2004-04-15 | ||
JP2004-219500 | 2004-07-28 | ||
JP2004219500 | 2004-07-28 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/540,762 A-371-Of-International US20060060232A1 (en) | 2004-04-15 | 2005-03-30 | Liquid treatment device and liquid treatment method |
US12/403,286 Division US8652344B2 (en) | 2004-04-15 | 2009-03-12 | Liquid treatment method and storage system |
Publications (1)
Publication Number | Publication Date |
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WO2005100637A1 true WO2005100637A1 (ja) | 2005-10-27 |
Family
ID=35150024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/006120 WO2005100637A1 (ja) | 2004-04-15 | 2005-03-30 | 液処理装置および液処理方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060060232A1 (ja) |
EP (1) | EP1736568A4 (ja) |
JP (1) | JP4403177B2 (ja) |
KR (1) | KR100780789B1 (ja) |
CN (1) | CN1942606B (ja) |
TW (1) | TWI278029B (ja) |
WO (1) | WO2005100637A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311631A (ja) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
JP2011187891A (ja) * | 2010-03-11 | 2011-09-22 | Tokyo Electron Ltd | 液処理装置、液処理方法、プログラムおよびプログラム記録媒体 |
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DE102014016364A1 (de) * | 2014-11-05 | 2016-05-12 | Eisenmann Se | Reinigungsverfahren und Reinigungsvorrichtung für ein oder mehrere Teile eines Applikationssystems |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335295A (ja) * | 1997-06-05 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | 基板処理槽および基板処理装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4985111A (en) * | 1990-03-02 | 1991-01-15 | Chemcut Corporation | Process and apparatus for intermittent fluid application |
JP2739419B2 (ja) | 1992-09-25 | 1998-04-15 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US5625433A (en) * | 1994-09-29 | 1997-04-29 | Tokyo Electron Limited | Apparatus and method for developing resist coated on a substrate |
JPH09199467A (ja) * | 1996-01-17 | 1997-07-31 | Mitsubishi Electric Corp | 洗浄装置及びその方法 |
US5922138A (en) * | 1996-08-12 | 1999-07-13 | Tokyo Electron Limited | Liquid treatment method and apparatus |
JPH10229065A (ja) | 1997-02-14 | 1998-08-25 | Sony Corp | 洗浄槽および洗浄方法 |
US6613692B1 (en) * | 1999-07-30 | 2003-09-02 | Tokyo Electron Limited | Substrate processing method and apparatus |
US6616014B1 (en) * | 2000-02-25 | 2003-09-09 | The Boc Group, Inc. | Precision liquid mixing apparatus and method |
JP3851486B2 (ja) * | 2000-03-27 | 2006-11-29 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP3662484B2 (ja) * | 2000-08-09 | 2005-06-22 | エム・エフエスアイ株式会社 | ウェット処理方法及びウェット処理装置 |
JP4014127B2 (ja) * | 2000-10-04 | 2007-11-28 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP3681329B2 (ja) * | 2000-10-20 | 2005-08-10 | 東京エレクトロン株式会社 | 基板表面処理方法及び基板表面処理装置 |
JP2002353184A (ja) * | 2001-05-28 | 2002-12-06 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
JP3953361B2 (ja) * | 2002-05-08 | 2007-08-08 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US20060060232A1 (en) * | 2004-04-15 | 2006-03-23 | Tokyo Electron Limited | Liquid treatment device and liquid treatment method |
-
2005
- 2005-03-30 US US10/540,762 patent/US20060060232A1/en not_active Abandoned
- 2005-03-30 KR KR1020067004349A patent/KR100780789B1/ko active IP Right Grant
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- 2005-03-30 WO PCT/JP2005/006120 patent/WO2005100637A1/ja not_active Application Discontinuation
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335295A (ja) * | 1997-06-05 | 1998-12-18 | Dainippon Screen Mfg Co Ltd | 基板処理槽および基板処理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007311631A (ja) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
JP4705517B2 (ja) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体 |
US8216417B2 (en) | 2008-03-27 | 2012-07-10 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus and substrate treating method |
JP2011187891A (ja) * | 2010-03-11 | 2011-09-22 | Tokyo Electron Ltd | 液処理装置、液処理方法、プログラムおよびプログラム記録媒体 |
Also Published As
Publication number | Publication date |
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TWI278029B (en) | 2007-04-01 |
CN1942606A (zh) | 2007-04-04 |
JPWO2005100637A1 (ja) | 2008-03-06 |
CN1942606B (zh) | 2011-12-14 |
KR100780789B1 (ko) | 2007-11-30 |
US20060060232A1 (en) | 2006-03-23 |
JP4403177B2 (ja) | 2010-01-20 |
EP1736568A4 (en) | 2011-01-12 |
KR20060064066A (ko) | 2006-06-12 |
EP1736568A1 (en) | 2006-12-27 |
US20090179007A1 (en) | 2009-07-16 |
TW200537616A (en) | 2005-11-16 |
US8652344B2 (en) | 2014-02-18 |
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