WO2005100237A1 - Mesogyroscope planaire isole - Google Patents

Mesogyroscope planaire isole Download PDF

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Publication number
WO2005100237A1
WO2005100237A1 PCT/US2005/012319 US2005012319W WO2005100237A1 WO 2005100237 A1 WO2005100237 A1 WO 2005100237A1 US 2005012319 W US2005012319 W US 2005012319W WO 2005100237 A1 WO2005100237 A1 WO 2005100237A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
wafer
inertial sensor
sensing
slots
Prior art date
Application number
PCT/US2005/012319
Other languages
English (en)
Inventor
Anthony Dorian Challoner
Kirill V. Shcheglov
Original Assignee
California Institute Of Technology
The Boeing Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/639,135 external-priority patent/US6944931B2/en
Priority claimed from US10/639,134 external-priority patent/US7040163B2/en
Application filed by California Institute Of Technology, The Boeing Company filed Critical California Institute Of Technology
Publication of WO2005100237A1 publication Critical patent/WO2005100237A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers

Definitions

  • the excitation electrodes 108B, 108C are disposed closer to the central support 106 (i.e., within inner slots of the resonator 100) than the electrodes 108A, 108D (i.e., within outer slots of the resonator 100) to improve sensing.
  • the arrangement and distribution of the excitation and sensing electrodes 108A-108D can be varied as desired.
  • Extensive middle electrodes can also be used to bias the resonator 100 providing complete electrostatic trimming or tuning to degeneracy or for parametric driving with or without trim of damping asymmetry.
  • biasing electrodes typically include multiple separate elements as the excitation and sensing electrodes.
  • the advantages of this approach beyond its exceptional mechanical quality are further revealed when it is recognized that the 170 um ring width of the mesoscale 16mm diameter fused quartz design is 70X the 2.5 um ring width of the optimum 2 mm diameter microscale for conventional silicon. For fixed etch error of 0.1 um this leads to 70X improvement in relative precision of its micromachined symmetry, tuning performance and inherent drift. At the same time, the remarkable thermoelastic properties of fused quartz also make it more advantageous than silicon at microscale even though its vibration is not as isothermal and its amplification factor V is lower.
  • Various other materials, scales and geometry can be considered using finite element analysis; however, a mesoscale planar resonator micromachined from substantially thermally nonconductive material that can be used for capacitive operation is the key to high performance.
  • this embodiment employs isolation and optimization of the sense capacitance (e.g., the outer slots of each element) and the drive capacitance (e.g., the inner slots of each element) and provides a geometrically scalable design to smaller/larger diameters and thinner/thicker wafers.
  • This embodiment can also be entirely defined by slots of the same width for machining uniformity and symmetry.
  • four-fold symmetry is well suited for the most commonly available (100) crystal orientation SiGe wafers and an ideal angular gain approaches one.
  • Wiring can be photographed onto the baseplate and wirebonded outside the device to a wiring interconnect grid as discussed above. However, implementation of this alternate embodiment can require many electrodes and interconnect wiring. As discussed below, the electrical wiring for this embodiment can also be alternately developed into an integral vacuum housing produced simultaneously with the resonator. Such an implementation is detailed hereafter.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Gyroscopes (AREA)

Abstract

Un capteur à inertie comprend un résonateur de disque à échelle mésoscopique constitué d'une tranche micro-usinée pratiquement non conductrice de chaleur à faible coefficient d'expansion thermique en vue de la détection d'une vibration sensiblement horizontale, un support rigide couplé au résonateur au niveau d'un point de montage central du résonateur, au moins une électrode d'excitation à l'intérieur du résonateur permettant d'exciter la vibration horizontale interne du résonateur, et au moins une électrode de détection à l'intérieur du résonateur permettant de détecter la vibration horizontale interne du résonateur. Le capteur à inertie est fabriqué par gravure d'une plaque de base, liaison de la tranche pratiquement non conductrice de chaleur sur la plaque de base gravée, par gravure à perforation de la touche au moyen d'une gravure ionique réactive profonde afin de former le résonateur, par dépôt d'un film mince conducteur sur la tranche gravée. La tranche pratiquement non conductrice de chaleur peut comprendre une tranche envers le dioxyde de silicium, qui est une tranche en verre d'oxyde de silicium ou une tranche en verre borosilicaté ou une tranche de silicium-germanium.
PCT/US2005/012319 2003-08-12 2005-04-12 Mesogyroscope planaire isole WO2005100237A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/639,135 US6944931B2 (en) 2002-08-12 2003-08-12 Method of producing an integral resonator sensor and case
US10/639,134 US7040163B2 (en) 2002-08-12 2003-08-12 Isolated planar gyroscope with internal radial sensing and actuation
US60/561,323 2004-04-12

Publications (1)

Publication Number Publication Date
WO2005100237A1 true WO2005100237A1 (fr) 2005-10-27

Family

ID=34966541

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/012319 WO2005100237A1 (fr) 2003-08-12 2005-04-12 Mesogyroscope planaire isole

Country Status (1)

Country Link
WO (1) WO2005100237A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103363978A (zh) * 2006-03-27 2013-10-23 佐治亚科技研究公司 陀螺仪设备和制造微机电陀螺仪的方法
CN104897145A (zh) * 2015-05-29 2015-09-09 上海交通大学 一种外缘固定式压电驱动多环陀螺及其制备方法
US10278281B1 (en) 2015-10-30 2019-04-30 Garmin International, Inc. MEMS stress isolation and stabilization system
US10352960B1 (en) 2015-10-30 2019-07-16 Garmin International, Inc. Free mass MEMS accelerometer
US10551190B1 (en) 2015-10-30 2020-02-04 Garmin International, Inc. Multi Coriolis structured gyroscope
US10794700B1 (en) 2015-10-30 2020-10-06 Garmin International, Inc. Stress isolation of resonating gyroscopes

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US6145380A (en) * 1997-12-18 2000-11-14 Alliedsignal Silicon micro-machined accelerometer using integrated electrical and mechanical packaging
WO2000068640A2 (fr) * 1999-04-21 2000-11-16 The Regents Of The University Of California Gyroscope de mesure d'angle fabrique par micro-usinage
WO2001074708A2 (fr) * 2000-04-05 2001-10-11 Interuniversitair Microelektronica Centrum (Imec) Procede de depot de sige polycristallin adaptes au microusinage, et dispositifs ainsi obtenus
US20020066317A1 (en) * 2000-12-06 2002-06-06 Gang Lin Micro yaw rate sensors
US20030010123A1 (en) * 2000-01-13 2003-01-16 Malvern Alan R Accelerometer
US20040055380A1 (en) * 2002-08-12 2004-03-25 Shcheglov Kirill V. Isolated planar gyroscope with internal radial sensing and actuation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US6145380A (en) * 1997-12-18 2000-11-14 Alliedsignal Silicon micro-machined accelerometer using integrated electrical and mechanical packaging
WO2000068640A2 (fr) * 1999-04-21 2000-11-16 The Regents Of The University Of California Gyroscope de mesure d'angle fabrique par micro-usinage
US20030010123A1 (en) * 2000-01-13 2003-01-16 Malvern Alan R Accelerometer
WO2001074708A2 (fr) * 2000-04-05 2001-10-11 Interuniversitair Microelektronica Centrum (Imec) Procede de depot de sige polycristallin adaptes au microusinage, et dispositifs ainsi obtenus
US20020066317A1 (en) * 2000-12-06 2002-06-06 Gang Lin Micro yaw rate sensors
US20040055380A1 (en) * 2002-08-12 2004-03-25 Shcheglov Kirill V. Isolated planar gyroscope with internal radial sensing and actuation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103363978A (zh) * 2006-03-27 2013-10-23 佐治亚科技研究公司 陀螺仪设备和制造微机电陀螺仪的方法
CN103363978B (zh) * 2006-03-27 2016-09-14 佐治亚科技研究公司 陀螺仪设备和制造微机电陀螺仪的方法
CN104897145A (zh) * 2015-05-29 2015-09-09 上海交通大学 一种外缘固定式压电驱动多环陀螺及其制备方法
US10278281B1 (en) 2015-10-30 2019-04-30 Garmin International, Inc. MEMS stress isolation and stabilization system
US10352960B1 (en) 2015-10-30 2019-07-16 Garmin International, Inc. Free mass MEMS accelerometer
US10551190B1 (en) 2015-10-30 2020-02-04 Garmin International, Inc. Multi Coriolis structured gyroscope
US10794700B1 (en) 2015-10-30 2020-10-06 Garmin International, Inc. Stress isolation of resonating gyroscopes
US10907965B2 (en) 2015-10-30 2021-02-02 Garmin International, Inc. Multi coriolis structured gyroscope

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