WO2005088763A1 - 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 - Google Patents
分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 Download PDFInfo
- Publication number
- WO2005088763A1 WO2005088763A1 PCT/JP2004/003086 JP2004003086W WO2005088763A1 WO 2005088763 A1 WO2005088763 A1 WO 2005088763A1 JP 2004003086 W JP2004003086 W JP 2004003086W WO 2005088763 A1 WO2005088763 A1 WO 2005088763A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- rectangular waveguide
- waveguide
- radiation
- microwave
- waveguides
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Definitions
- the present invention relates to a distributor and a plasma processing apparatus, and more particularly to a distributor of electromagnetic waves using two rectangular waveguides and a plasma processing apparatus using the same.
- plasma processing devices are widely used to perform processes such as etching, assing, and CVD (chemical vapor deposition).
- a microwave plasma processing apparatus that generates plasma by supplying a microwave into a processing container to ionize, excite, and dissociate a gas in the processing container.
- FIG. 11 is a longitudinal sectional view showing the entire configuration of a conventional plasma processing apparatus.
- This plasma processing apparatus has a processing container 1 having a bottomed cylindrical shape having a rectangular shape in plan view.
- the processing vessel 1 is formed of a metal such as A1.
- a mounting table 2 is provided at the center of the bottom surface of the processing container 1.
- an LCD substrate 3 or the like is disposed as a processing object.
- a high frequency power supply 5 is connected to the mounting table 2 via a matching box 4.
- An exhaust port 6 for evacuation is provided at the peripheral edge of the bottom surface of the processing container 1, and a gas inlet 7 for introducing a gas into the processing container 1 is provided on a side wall of the processing container 1.
- a plasma gas such as Ar and a reaction gas such as CF 4 are introduced.
- the upper opening of the processing vessel 1 is closed by a dielectric plate 8 made of quartz glass or the like in order to keep the inside of the processing vessel 1 under reduced pressure while introducing microwaves therefrom.
- An O-ring is interposed between the upper surface of the side wall of the processing vessel 1 and the dielectric plate 8, and the processing vessel 1 airtightness is ensured.
- a microphone mouth wave supply device 110 that supplies a microphone mouth wave into the processing container 1 is arranged.
- FIG. 12 is a cross-sectional view showing a configuration of a conventional microwave supply device 110.
- the microphone mouth wave supply device 110 includes a microwave oscillator 120, a microwave distributor 130, and an antenna component 150.
- the antenna structure 150 has a plurality of radiating waveguides 15 A, 15 B, 15 C, 15 D, 15 E, and 15 F. ing.
- Each of the radiating waveguides 15 1 A to 15 1 F comprises a rectangular waveguide.
- a rectangular waveguide is a waveguide whose cross section perpendicular to the axis is rectangular, and converts microwaves to TE !. Mode can be transmitted.
- a magnetic field is generated parallel to the tube wall including the long side of the above-described cross section, that is, a wide wall, and an electric field is generated parallel to the tube wall including the short side, ie, the narrow wall.
- Each of the wide walls of F has a plurality of radiation slots 15 2 formed therein. Microwaves input to each of the radiation waveguides 15 1 A to 15 F are radiated into the processing vessel 1 through the radiation slots 15 2 and used for plasma generation.
- a slow wave member 15 3 made of a dielectric material (relative permittivity ⁇ r (> 1)) is arranged in the waveguides of the radiation waveguides 15 A to 15 F.
- the guide wavelength so becomes 1 / ( ⁇ r) 1/ 2, the guide wavelength; shorten the distance of the radiation slots 1 5 2 set based on the L g, uniform distribution of plasma density can do.
- the microwave distributor 130 has a microwave waveguide 13 1 composed of a rectangular waveguide and a feeding waveguide 14 1, and receives microwaves input from the microwave oscillator 120.
- the antenna waveguide 150 is distributed to each of the radiation waveguides 151A to 151F.
- the input end of the microwave waveguide 13 1 is connected to the microwave oscillator 120, and the output end is connected to the center of one narrow wall 14 1 A of the feeding waveguide 14 1. ing.
- a communication hole 1 3 2 is formed to allow the two waveguides 1 3 1 and 1 4 1 to communicate (for example, Masamitsu Nakajima, “Microwave Engineering”, Morikita Publishing) , P. 123).
- the other narrow wall 14 1 B of the feeding waveguide 14 1 1 has an opening 1 communicating with the feeding waveguide 14 1 and the radiation waveguides 15 1 A to 15 1 F. 43 are formed. If there is an opening 144 facing at least a part of the communication hole 133 that communicates with the microwave waveguide 133, microwaves output to the radiation waveguide via the opening 134 increase. The distribution of the microwave to each of the radiation waveguides 15 1 A to 15 F is biased. For this reason, the communication hole 13 2 communicating with the microwave waveguide 13 1 1 is made so that it does not face the opening 1 4 3 communicating with the radiation waveguides 15 1 A to 15 F. Irises 1 47 A and 1 47 B are provided at the connection between the mouth wave waveguide 13 1 and the feeding waveguide 14 1, and the width of the communication hole 13 2 is set to the width of the microwave waveguide 13 1. It is narrower than the pipe width.
- the inside of the microwave waveguide 13 1 is hollow, and the slow wave material 15 3 is disposed inside the feeding waveguide 14 1.
- the connection between the microwave waveguide 13 1 and the power supply waveguide 14 1 is provided by providing the iris 14 7 A and 14 7 B.
- the pipe width becomes narrower at the part, and the frequency band that can pass through the connection part becomes narrower.
- the larger the relative dielectric constant difference in the tube the larger the difference.
- the trend of narrowing the frequency band becomes even more pronounced. For this reason, even if the oscillation frequency of the microwave oscillator 120 fluctuates only slightly, the power that cannot be passed through the connection between the two waveguides 131 and 141 increases, and the reflected power increases. There has been a problem that the reflection loss in the microwave distributor 130 composed of 31 and 141 increases. Disclosure of the invention
- the present invention has been made to solve such a problem, and its purpose is to reduce the reflection loss that occurs when the frequency of electromagnetic waves such as microwaves input to a distributor fluctuates. is there.
- a distributor includes an oscillator that outputs an electromagnetic wave, a first rectangular waveguide connected to the oscillator, and a second rectangular shape having a plurality of openings.
- a waveguide, and the first rectangular waveguide and the second rectangular waveguide communicate with each other through a communication hole formed in one of the narrow walls.
- a plasma processing apparatus includes: a mounting table for mounting an object; A processing container for accommodating the mounting table, an antenna structure having a plurality of radiation waveguides having slots formed therein, and a duplexer for distributing electromagnetic waves to each of the radiation waveguides.
- the splitter is connected to an oscillator that outputs an electromagnetic wave, a first rectangular waveguide connected to the oscillator, and one end of each of the radiation waveguides through a plurality of openings.
- the electromagnetic wave propagating in the first rectangular waveguide is formed on one narrow wall of each of the first rectangular waveguide and the second rectangular waveguide. Introducing the electromagnetic waves introduced into the second rectangular waveguide through the plurality of openings formed in the second rectangular waveguide. And distributing to the waveguide.
- the electromagnetic wave propagating through the first rectangular waveguide is formed on one narrow wall of each of the first rectangular waveguide and the second rectangular waveguide. And a step of introducing electromagnetic waves introduced into the second rectangular waveguide through the plurality of openings formed in the second rectangular waveguide. Distributing to the radiation waveguide, supplying the electromagnetic wave introduced into the radiation waveguide to the processing vessel through a slot formed in the radiation waveguide, and supplying the electromagnetic wave to the processing vessel. Processing the object placed inside the processing container using plasma generated by the electromagnetic wave.
- the electromagnetic wave propagating in the first rectangular waveguide is formed on one narrow wall of each of the first rectangular waveguide and the second rectangular waveguide.
- FIG. 1 is a longitudinal sectional view showing the overall configuration of the plasma processing apparatus according to the first embodiment.
- FIG. 2 is a cross-sectional view showing the configuration of the microwave supply device.
- FIG. 3 is a cross-sectional view showing the configuration of the microwave supply device.
- FIG. 4 is a diagram showing dimensions of each part used for numerical analysis of the connection structure.
- FIG. 5 is a characteristic diagram relating to the reflection loss of the connection structure.
- FIG. 6 is a cross-sectional view showing the configuration of the microwave supply device according to the second embodiment.
- FIG. 7 is a cross-sectional view showing the configuration of the microphone mouth wave supplying device according to the third embodiment.
- FIG. 8 is a cross-sectional view showing the configuration of the microphone mouth wave supplying device according to the fourth embodiment.
- FIG. 9 is a cross-sectional view showing the configuration of the microphone mouth wave supplying device according to the fifth embodiment.
- FIG. 10 is an enlarged view showing the vicinity of the end of the radiation waveguide.
- FIG. 11 is a longitudinal sectional view showing the entire configuration of a conventional plasma processing apparatus.
- FIG. 12 is a cross-sectional view showing a configuration of a conventional microwave supply device. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 is a vertical sectional view showing the overall configuration of the plasma processing apparatus according to the first embodiment of the present invention.
- This plasma processing apparatus includes: a mounting table 2 on which an LCD substrate 3 and the like are mounted as a processing target; a processing container 1 having a rectangular bottomed shape that accommodates the mounting table 2, and a top opening of the processing container 1. It has a dielectric plate 8 that closes off, and a microwave supply device 10 that supplies microwaves as electromagnetic waves from outside to the processing vessel 1 via the dielectric plate 8.
- FIG. 2 and FIG. 3 are cross-sectional views showing the configuration of the microwave supply device 10.
- FIG. 2 shows a cross section taken along the line II-II 'in FIG. 1.
- FIG. The configuration excluding is shown. Some components are shown by functional blocks.
- the microphone mouth wave supply device 10 includes a microphone mouth wave oscillator 20, a microphone mouth wave distributor 30, and an antenna component 50.
- the microwave oscillator 20 is an oscillator that outputs a microwave having a frequency of, for example, 2.45 GHz, and includes, for example, a magnetron.
- the microwave distributor 30 converts the microwave input from the microwave oscillator 20 into a plurality of radiation waveguides 51A, 51B, 51C, 51D, Distribute to 51E and 51F respectively.
- the configuration will be described later in detail.
- the radiation waveguides 51A to 51F of the antenna structure 50 are each composed of a rectangular waveguide, and the input end (one end) is connected to the microwave distributor 30 and the termination end (the other end). Is shorted, and a plurality of radiation slots 52 are formed on the wide wall (H side).
- a cross slot as shown in FIG. 3 is used as an example of the radiation slot 52.
- a cross slot is a cross-slot in which two pairs of slots cross each other at the center of each other to emit circularly polarized waves, and are arranged at an interval that is approximately a natural number times the guide wavelength g .
- a dielectric (dielectric constant £ r (> 1)) consisting of retardation member 3 is arranged I have.
- the radiation waveguides 51A to 51F are arranged in the direction of the tube axis (the direction in which the microwave travels) with the wide wall having the radiation slots 52 facing the mounting table 2. They are arranged in the orthogonal width direction.
- the microwaves output from the microwave oscillator 20 are radiated by the microwave distributor 30 into the radiation waveguides 51 A to 51 F of the antenna structure 50. Is distributed to each of the.
- the microwaves introduced from the input ends of the radiating waveguides 51A to 51F are gradually radiated from the radiating slots 52 formed in a plurality of wide walls while propagating toward the terminal end. It is supplied into the processing vessel 1 through the dielectric plate 8.
- the electrons are accelerated by the electric field of the microwave supplied into the processing vessel 1, and the gas in the processing vessel 1 is ionized, excited, and dissociated, and plasma is generated.
- the surface of the LCD substrate 3 on the mounting table 2 is subjected to processing such as etching, ashing, oxidation, nitriding, or CVD by this plasma.
- Microwave distributor Reference numeral 30 denotes a microwave waveguide 31 composed of a first rectangular waveguide for guiding a microwave input from the microwave oscillator 20 and a microwave guided by the microwave waveguide 31 for radiation. And a feeding waveguide 41 composed of a second rectangular waveguide distributed to each of the waveguides 51A to 51F.
- the microwave waveguide 31 has an input end (one end) connected to the microwave oscillator 20 and a terminal end (other end) 34 short-circuited.
- the microwave waveguide 31 and the feeding waveguide 41 are arranged in parallel so that one narrow wall (E surface) 31 A and 41 A face each other. At this time, the narrow walls 31A and 41A are in contact with each other, or the narrow walls 31A and 41A are formed of the same conductive plate 63 as shown in FIGS. Is desirable.
- a communication hole 32 for communicating the two waveguides 31 and 41 is formed.
- the communication hole 32 has a substantially rectangular shape, but may have another shape. In this embodiment, the communication hole 32 is located at the center of the narrow wall 41A of the power supply waveguide 41. The microwave propagating through the microwave waveguide 31 through the communication hole 32 is introduced into the feeding waveguide 41.
- Both ends of the feeding waveguide 41 are short-circuited.
- the other narrow wall 41B opposite to the narrow wall 41A in which the communication hole 32 is formed communicates the feeding waveguide 41 with the radiation waveguides 51A to 51F.
- a plurality of openings 43 are formed. Through these openings 43, the microwave introduced into the feeding waveguide 41 is distributed to each of the radiation waveguides 51A to 51F.
- the width of the openings 43 is adjusted so that the microwaves are evenly distributed. Further, the width of the communication hole 32 is adjusted so that the opening 43 and the communication hole 32 do not face each other.
- the communication hole 32 is formed with the narrow walls 31 A, 4 A of the microwave waveguide 31 and the feeding waveguide 41.
- the tube width does not become narrower at the connection between the two waveguides 31 and 41, so that the narrowing of the frequency band that can pass through the connection can be suppressed. Therefore, when the frequency of the microwave fluctuates, the power that cannot be passed through the connection portion and is reflected is reduced, and the reflection loss in the microphone mouthpiece distributor 30 can be reduced.
- the inside of the microwave waveguide 31 is hollow, the inside of the feeding waveguide 41 has the same slow wave as the inside of the radiation waveguides 51A to 51F.
- the material 53 is disposed, and the relative permittivities of the two waveguides 31 and 41 are different from each other. However, even in such a case, by forming the communication hole 32 in the narrow walls 31 A and 41 A of the waveguides 31 and 41, the reflection loss in the microphone mouth-wave distributor 30 is reduced. Reduction is possible.
- a guide wall 33 protruding from the other narrow wall 31B of the microwave waveguide 31 toward the communication hole 32 is provided in the microwave waveguide 31.
- the guiding wall 33 extends between the upper and lower wide walls of the microwave waveguide 31.
- the protruding length 1 ⁇ is set to, for example, the guide wavelength of the microwave waveguide 31; L g It may be set to approximately 1 Z 2 of 0 .
- a guide wall 33 is provided at a position near the front of the communication hole 32, and the terminal end 34 is placed at a position separated from the guide wall 33 by about an integral multiple of about 1 Z 2 of the guide wavelength.
- a conductor pillar 45 is provided near the center of the communication hole 32 in the feeding waveguide 41.
- the conductor pillar 45 extends between the upper and lower wide walls of the power supply waveguide 41. Due to the arrangement of the diameters of the conductor columns 45, the microwave introduced into the power supply waveguide 41 through the communication hole 32 is distributed to one end or the other end of the power supply waveguide. Ratio can be adjusted. Further, it is possible to suppress the reflection of the microphone mouth wave introduced into the feeding waveguide 41 and return to the microphone mouth wave waveguide 31. Therefore, the reflection loss in the microphone mouth wave distributor 30 can be further reduced.
- a plurality of guide walls 44 projecting from the narrow wall 41A toward each of the openings 43 are provided in the feeding waveguide 41.
- the guiding wall 44 extends between the upper and lower wide walls of the feeding waveguide 41. By providing such a guiding wall 44 and guiding the microwave propagating through the feeding waveguide 41 in the direction of the opening 43, the microwave is transmitted through the opening 43 to the radiation waveguides 51A to 51F. Each will be easier to introduce. Therefore, the microwave can be efficiently supplied from the microwave distributor 30 to each of the radiation waveguides 51A to 51F.
- the microwave distributor 30 the reflection in the microwave distributor 30 when the frequency of the microwave fluctuates is suppressed, and the microphone waveguide is provided to each of the radiation waveguides 51A to 51F. Can be supplied efficiently. As a result, the microwave can be efficiently supplied into the processing container 1, and the process using the plasma generated by the microwave can be efficiently performed.
- the feeding waveguide 41 and the radiation waveguides 51A to 51F are two flat plates 61, 62 each having a rectangular shape in a plan view and spaced apart from each other and arranged in parallel.
- side walls 63 which connects the periphery of the flat plate 61, 62, 64, 65, the interior of the box body composed of 66. from the side wall 63 substantially; parallel to the side walls 63, 65 at a position separated only l g / 2 distribution
- the area sandwiched between the partition 67 and the side wall 65 is formed by dividing the area between the partition 67 and the side wall 65 with five partition plates 68 arranged in parallel with the side walls 64 and 66 at an interval of / 2. Is done.
- the flat plates 61 and 62, the side walls 63 to 66, and the partition plates 67 and 68 are formed of a conductor such as copper.
- the flat plates 61 and 62 become the wide walls of the feeding waveguide 41 and the radiation waveguides 51A to 51F, respectively, and the side wall 63 is formed as one narrow wall 41A of the feeding waveguide 41.
- the partition plate 67 becomes the other narrow wall 41 B of the feeding waveguide 41, and the side wall 65 force S
- the end faces of the radiation waveguides 51A to 51F, a part of each of the side walls 64, 66 become both end faces of the feeding waveguide 41, and each of the side walls 64, 66, respectively.
- the other part and the partition plate 68 become the narrow walls of the radiation waveguides 51A to 51F.
- a communication hole 32 is formed in the center of the side wall 63, and a plurality of openings 43 are formed in the partition plate 67. Further, a plurality of radiation slots 52 are formed on the flat plate 62 facing the mounting table 2.
- FIG. 6 is a cross-sectional view showing the configuration of the microwave supply device according to the second embodiment of the present invention.
- a microwave waveguide 36 having an L-shape in plan view is used in the microwave distributor 3OA in the microwave supply device 11.
- Other parts are the same as those of the microwave distributor 30 in the first embodiment. That is, a communication hole 32 for communicating the microwave waveguide 36 with the power feeding waveguide 41, a guiding wall 33 in the microwave waveguide 36, and a terminal 3 4 of the microwave waveguide 36.
- the conductor pillar 45 and the force in the power supply waveguide 41 are provided in the same manner as in the first embodiment. Therefore, similarly to the first embodiment, it is possible to reduce the reflection loss in the microwave distributor 30 when the frequency of the microwave changes.
- FIG. 7 is a cross-sectional view showing the configuration of the microphone mouth wave supplying device according to the third embodiment of the present invention.
- this microwave supply device 12 in order to shorten the interval between the radiation slots 52, the ratio of alumina or the like is contained in the radiation waveguides 51 A to 51 F and the feeding waveguide 41.
- a slow-wave member 53 made of a dielectric having a relatively high dielectric constant is arranged.
- a slow-wave material 37 made of a dielectric material such as quartz having a lower dielectric constant than the slow-wave material 53 is arranged. ing.
- the area away from the communication hole 32 remains hollow.
- the frequency band that can pass through the connection between the microwave waveguide 36 and the power supply waveguide 41 tends to be narrower as the change in the relative permittivity at the connection increases. Therefore, as described above, the relative permittivity of the region near the communication hole 32 in the tube of the microwave waveguide 36 is determined by the relative permittivity of the region away from the communication hole 32 and the relative permittivity of the feeding waveguide 41.
- the change in the relative permittivity at the connection between the two waveguides 36 and 41 can be reduced, and the frequency band that can pass through the connection is narrow.
- the localization can be suppressed. Therefore, when the frequency of the microwave fluctuates, it is possible to reduce the power that cannot be passed through the connection portion and is reflected, thereby reducing the reflection loss in the microwave distributor 3 OB.
- three or more types of slow wave materials may be used so that the relative permittivity changes in the microwave waveguide 36 and the feeding waveguide 41 in three or more stages.
- FIG. 8 is a cross-sectional view illustrating a configuration of a microwave supply device according to a fourth embodiment of the present invention.
- This microwave supply device 13 is configured by combining a plurality of microwave supply devices 11 according to the second embodiment. More specifically, it is composed of eight microwave supply devices 11A, 11B, 11C, 11D, 11E, 11F, 11G, and 11H.
- the microwave supply devices 11A to 11H are arranged such that the surfaces of the antenna structures 50 on which the radiation slots 52 are formed (the wide walls of the radiation waveguides 51A to 5IF) form the same plane.
- the microphone mouthpiece supplying devices 11A to 11D are arranged such that the side walls 64 and 66 of the antenna structure 50 face each other.
- microwave supply devices 11E to 11H are arranged such that the side walls 65 of the antenna structure 50 face each other.
- the processing vessel 1 By supplying power to the processing vessel 1 using a plurality of microphone mouthpiece supply devices 11 A to 11 H as in the present embodiment, power supply equivalent to using one high-power oscillator is provided. It can be realized using a plurality of low-power oscillators. Therefore, even when a large amount of power must be supplied to the processing container 1 such as when performing plasma processing using the processing container 1 having a large diameter, the plasma oscillator can be formed by using a plurality of low-power and low-cost microwave oscillators 20. The manufacturing cost of the entire processing apparatus can be reduced.
- FIG. 9 is a cross-sectional view showing a configuration of a microwave supply device according to a fifth embodiment of the present invention.
- the antenna structure 70 of the microwave supply device 14 has radiation waveguides 71A to 71F similar to the radiation waveguides 51A to 51F in the first embodiment. are doing.
- the waveguides for radiation 71 A to 71 F will be referred to as waveguides for radiation 71.
- FIG. 10 is an enlarged view showing the vicinity of the end of the radiation waveguide 71.
- a standing wave excitation slot 72 is formed on the end side of the wide wall in which the radiation slot 52 is formed.
- the standing wave excitation slot 72 is a slot excited by a standing wave formed by a traveling wave traveling from the input end of the radiation waveguide 71 to the end and a reflected wave reflected at the end toward the input end. is there. Therefore, it is desirable that the standing wave excitation slot 72 be arranged at a position where the amplitude of the standing wave is maximum, that is, at a position separated from the terminal end by about a natural number times about 1 to 2 times the guide wavelength g . In the present embodiment, it is disposed at a position substantially example g Z 2 from the end. In this embodiment, a cross slot is used as the standing wave excitation slot 72.
- the reflected wave reflected at the end of the radiation waveguide 71 is radiated to the outside, and the reflected wave traveling backward in the tube is reduced.
- the radiation slot 52 excited by the traveling wave operates as designed, the microwave propagating through the radiation waveguide 71 is efficiently put into the processing vessel 1 through the radiation slot 52. It is possible to efficiently perform the process using the plasma supplied and supplied by the microwave.
- the standing wave excitation slot 72 would cause circularly polarized waves to radiate from the radiation slot 52 in the front direction (the direction normal to the wide wall where the radiation slot 52 is formed). Can not. It is considered that the reason is that the reflected wave reduction by the standing wave excitation slot 72 is insufficient. Therefore, in this embodiment, between the standing wave excitation slot 72 and the adjacent radiation slot 52, a reflecting member 73 that reflects a part of the traveling wave to the input end side is provided. ing.
- the reflecting member 73 is composed of two reflecting walls 73 A and 73 B vertically projecting from respective narrow walls of the radiation waveguide 71.
- the reflecting walls 73A and 73B extend between the upper and lower wide walls of the radiation waveguide 71.
- the reflecting wall 7 3 A, 7 3 B substantially toward the input end side and the center position of the standing wave excited slot 7 2 from the center position; L g about were placed in a suitable position between the positions accustomed , Its protruding length
- the reflected waves reflected by the reflecting walls 73A and 73B can cancel the reflected waves reflected by the end of the radiation waveguide 71 or the standing wave excitation slot 72.
- microwaves can be emitted from the emission slot 52 in the front direction. That is, microwaves can be radiated from the antenna structure 70 toward the mounting table 2. As a result, plasma is generated directly above the mounting table 2, and thus the design of the plasma processing apparatus is facilitated.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Waveguide Aerials (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006510833A JP4134226B2 (ja) | 2004-03-10 | 2004-03-10 | 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 |
PCT/JP2004/003086 WO2005088763A1 (ja) | 2004-03-10 | 2004-03-10 | 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 |
CNB200480042366XA CN100546098C (zh) | 2004-03-10 | 2004-03-10 | 分配器和分配方法,等离子处理***和方法,以及lcd的制造方法 |
US10/591,294 US7582569B2 (en) | 2004-03-10 | 2004-03-10 | Distributor and distributing method, plasma processing system and method, and process for fabricating LCD |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2004/003086 WO2005088763A1 (ja) | 2004-03-10 | 2004-03-10 | 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005088763A1 true WO2005088763A1 (ja) | 2005-09-22 |
Family
ID=34975895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/003086 WO2005088763A1 (ja) | 2004-03-10 | 2004-03-10 | 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7582569B2 (ja) |
JP (1) | JP4134226B2 (ja) |
CN (1) | CN100546098C (ja) |
WO (1) | WO2005088763A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335212A (ja) * | 2006-06-14 | 2007-12-27 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
WO2014103604A1 (ja) * | 2012-12-25 | 2014-07-03 | 東海ゴム工業株式会社 | マイクロ波プラズマ生成装置 |
US11972930B2 (en) | 2015-10-29 | 2024-04-30 | Applied Materials, Inc. | Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101096950B1 (ko) * | 2004-03-19 | 2011-12-20 | 샤프 가부시키가이샤 | 플라즈마 처리장치 및 플라즈마 처리방법 |
US20080099447A1 (en) * | 2006-10-06 | 2008-05-01 | Makoto Ando | Plasma processing apparatus and plasma processing method |
DE112008001130T5 (de) * | 2007-06-11 | 2010-04-29 | Tokyo Electron Ltd. | Plasmabearbeitungsvorrichtung, Energieversorgungsvorrichtung sowie Verfahren zum Betrieb der Plasmabearbeitungsvorrichtung |
WO2009119298A1 (ja) * | 2008-03-25 | 2009-10-01 | 三菱電機株式会社 | 導波管電力分配器及びその製造方法 |
US8890410B2 (en) * | 2009-09-17 | 2014-11-18 | Imagineering, Inc. | Plasma generation device |
US10426001B2 (en) | 2013-03-15 | 2019-09-24 | Tokyo Electron Limited | Processing system for electromagnetic wave treatment of a substrate at microwave frequencies |
US10269541B2 (en) | 2014-06-02 | 2019-04-23 | Applied Materials, Inc. | Workpiece processing chamber having a thermal controlled microwave window |
US10039157B2 (en) * | 2014-06-02 | 2018-07-31 | Applied Materials, Inc. | Workpiece processing chamber having a rotary microwave plasma source |
US20170350014A1 (en) * | 2014-12-26 | 2017-12-07 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US11222769B2 (en) | 2017-05-26 | 2022-01-11 | Applied Materials, Inc. | Monopole antenna array source with gas supply or grid filter for semiconductor process equipment |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07106847A (ja) * | 1993-10-07 | 1995-04-21 | Nippon Steel Corp | 漏れ波導波管スロットアレーアンテナ |
JP2928154B2 (ja) * | 1996-03-14 | 1999-08-03 | 日本電気株式会社 | 導波管−マイクロストリップ線路変換器 |
JPH11274838A (ja) * | 1998-03-25 | 1999-10-08 | Takushoku University | アクティブフェーズドアレーアンテナ |
JPH11330812A (ja) * | 1998-05-20 | 1999-11-30 | Nec Eng Ltd | 結合器 |
JP2001223098A (ja) * | 2000-02-07 | 2001-08-17 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
JP2003133232A (ja) * | 2001-10-19 | 2003-05-09 | Naohisa Goto | マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置 |
JP2003152441A (ja) * | 2001-08-31 | 2003-05-23 | Radial Antenna Kenkyusho:Kk | 平面形円偏波導波管スロットアンテナ及び平面形円偏波導波管アレーアンテナ並びに平面形導波管スロットアンテナ及び平面形導波管アレーアンテナ |
JP2003188152A (ja) * | 2001-12-19 | 2003-07-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ生成方法 |
JP2003198242A (ja) * | 2001-12-26 | 2003-07-11 | Mitsubishi Electric Corp | 導波管スロットアレーアンテナ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2592085B2 (ja) * | 1988-02-09 | 1997-03-19 | マツダ株式会社 | アンチロック装置 |
JPH03111577A (ja) * | 1989-09-26 | 1991-05-13 | Idemitsu Petrochem Co Ltd | マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法 |
US5265268A (en) * | 1991-04-29 | 1993-11-23 | Hughes Aircraft Company | Image recovery mixer |
JP2897770B1 (ja) * | 1998-05-27 | 1999-05-31 | 日新電機株式会社 | イオン源 |
KR100968571B1 (ko) * | 2003-06-12 | 2010-07-08 | 삼성전자주식회사 | 플라즈마 챔버 |
-
2004
- 2004-03-10 JP JP2006510833A patent/JP4134226B2/ja not_active Expired - Fee Related
- 2004-03-10 CN CNB200480042366XA patent/CN100546098C/zh not_active Expired - Fee Related
- 2004-03-10 US US10/591,294 patent/US7582569B2/en not_active Expired - Fee Related
- 2004-03-10 WO PCT/JP2004/003086 patent/WO2005088763A1/ja active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07106847A (ja) * | 1993-10-07 | 1995-04-21 | Nippon Steel Corp | 漏れ波導波管スロットアレーアンテナ |
JP2928154B2 (ja) * | 1996-03-14 | 1999-08-03 | 日本電気株式会社 | 導波管−マイクロストリップ線路変換器 |
JPH11274838A (ja) * | 1998-03-25 | 1999-10-08 | Takushoku University | アクティブフェーズドアレーアンテナ |
JPH11330812A (ja) * | 1998-05-20 | 1999-11-30 | Nec Eng Ltd | 結合器 |
JP2001223098A (ja) * | 2000-02-07 | 2001-08-17 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置 |
JP2003152441A (ja) * | 2001-08-31 | 2003-05-23 | Radial Antenna Kenkyusho:Kk | 平面形円偏波導波管スロットアンテナ及び平面形円偏波導波管アレーアンテナ並びに平面形導波管スロットアンテナ及び平面形導波管アレーアンテナ |
JP2003133232A (ja) * | 2001-10-19 | 2003-05-09 | Naohisa Goto | マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置 |
JP2003188152A (ja) * | 2001-12-19 | 2003-07-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ生成方法 |
JP2003198242A (ja) * | 2001-12-26 | 2003-07-11 | Mitsubishi Electric Corp | 導波管スロットアレーアンテナ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335212A (ja) * | 2006-06-14 | 2007-12-27 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
WO2014103604A1 (ja) * | 2012-12-25 | 2014-07-03 | 東海ゴム工業株式会社 | マイクロ波プラズマ生成装置 |
US11972930B2 (en) | 2015-10-29 | 2024-04-30 | Applied Materials, Inc. | Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005088763A1 (ja) | 2008-01-31 |
CN100546098C (zh) | 2009-09-30 |
US7582569B2 (en) | 2009-09-01 |
US20070133919A1 (en) | 2007-06-14 |
JP4134226B2 (ja) | 2008-08-20 |
CN1926714A (zh) | 2007-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI430358B (zh) | Microwave plasma source and plasma processing device | |
US7243610B2 (en) | Plasma device and plasma generating method | |
KR101393890B1 (ko) | 플라즈마 처리 장치 및 마이크로파 도입 장치 | |
US8136479B2 (en) | Plasma treatment apparatus and plasma treatment method | |
KR100381752B1 (ko) | 플라즈마 프로세스 장치 | |
WO2009101927A1 (ja) | マイクロ波プラズマ処理装置の天板、プラズマ処理装置およびプラズマ処理方法 | |
US20060158381A1 (en) | Slot array antenna and plasma processing apparatus | |
CN101978794B (zh) | 电力合成器以及微波导入机构 | |
JP4008728B2 (ja) | プラズマ処理装置 | |
WO2005088763A1 (ja) | 分配器および方法、プラズマ処理装置および方法、並びに、lcdの製造方法 | |
US7186314B2 (en) | Plasma processor and plasma processing method | |
US20190180984A1 (en) | Antenna and plasma deposition apparatus | |
JP2003151797A (ja) | プラズマプロセス装置および処理装置 | |
WO2013124906A1 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JPH0319332A (ja) | マイクロ波プラズマ処理装置 | |
JP4678905B2 (ja) | プラズマ処理装置 | |
JP2006040609A (ja) | プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法 | |
JP2005310478A (ja) | プラズマ処理装置および処理方法、並びに、フラットパネルディスプレイの製造方法 | |
TWI242231B (en) | Distributor and method, plasma treatment device and method, and LCD manufacturing method | |
US20070045242A1 (en) | Plasma processing apparatus and processing method, and flat panel display manufacturing method | |
JP3491190B2 (ja) | プラズマ処理装置 | |
JPH09293599A (ja) | プラズマ処理方法および装置 | |
KR100805569B1 (ko) | 분배기 및 방법, 플라즈마 처리 장치 및 방법, 및,lcd의 제조 방법 | |
WO2013124898A1 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JP3208995B2 (ja) | プラズマ処理方法及び装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200480042366.X Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2006510833 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007133919 Country of ref document: US Ref document number: 10591294 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067018487 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067018487 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase | ||
WWP | Wipo information: published in national office |
Ref document number: 10591294 Country of ref document: US |