WO2005083811B1 - Organic solar cells including group iv nanocrystals and method of manufacture - Google Patents
Organic solar cells including group iv nanocrystals and method of manufactureInfo
- Publication number
- WO2005083811B1 WO2005083811B1 PCT/US2004/031611 US2004031611W WO2005083811B1 WO 2005083811 B1 WO2005083811 B1 WO 2005083811B1 US 2004031611 W US2004031611 W US 2004031611W WO 2005083811 B1 WO2005083811 B1 WO 2005083811B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nanocrystals
- group
- bulk heterojunction
- heterojunction material
- solar cell
- Prior art date
Links
- 239000002159 nanocrystal Substances 0.000 title claims abstract 72
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract 35
- 239000006096 absorbing agent Substances 0.000 claims abstract 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract 9
- 239000010703 silicon Substances 0.000 claims abstract 9
- -1 silicon-germanium Chemical compound 0.000 claims 11
- 239000003153 chemical reaction reagent Substances 0.000 claims 10
- 239000002245 particle Substances 0.000 claims 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 8
- 229910052732 germanium Inorganic materials 0.000 claims 8
- 239000000412 dendrimer Substances 0.000 claims 6
- 229920000736 dendritic polymer Polymers 0.000 claims 6
- 229920000642 polymer Polymers 0.000 claims 6
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims 3
- 239000002738 chelating agent Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052744 lithium Inorganic materials 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 239000002674 ointment Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract 1
- 229920000620 organic polymer Polymers 0.000 abstract 1
Abstract
An improved organic solar cell converts light into electricity. The organic solar cell includes a cathode, an anode, and a bulk heterojunction material disposed therebetween. The bulk heterojuncton material includes a plurality of group IV nanocrystals (e.g., silicon nanocrystals) disposed within an organic absorber (e.g., an organic polymer).
Claims
20
AMENDED CLAIMS
[received by the International Bureau on 23 December 2005 (23.12.2005) :. Original claims 1 -57 have been replaced by amended claims 1-59]. 1. A solar cell comprising: a cathode; an anode; a bulk heterojunction material disposed between the cathode and the anode, the bulk heterojunction material comprising a combination of an organic absorber and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals, wherein at least one of the cathode and the anode is at least semi-transparent.
2. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprises less than about 75 weight percent of the bulk heterojunction material.
3. The solar cell of claim 2, wherein the plurality of group IV nanocrystals comprises between about 50 weight percent and 70 weight percent of the bulk heterojunction material.
4. The solar cell of claim 1, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
5. The solar cell of claim 4, wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
6. The solar cell of claim 4, wherein a portion of the plurality of the group IV nanocrystals have a largest particle dimension within the range of about 2 nanometers to about 5 nanometers.
7. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
8. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
9. The solar cell of claim 1 , wherein the plurality of group IV nanocrystals comprise silicon- germanium nanocrystals.
10. The solar cell of claim 1 , wherein at least a portion of the plurality of group IV nanocrystals are doped.
11. The solar cell of claim 10, wherein group IV nanocrystals located near the cathode and anode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell.
12. The solar cell of claim 1, wherein the bulk heteroj unction material further comprises a heavily n-type doped region located near the cathode, a heavily p-type doped region located near the anode, and a lightly doped region located therebetween.
13. The solar cell of claim 1 , wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
14. The solar cell of claim 13, wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol.
15. The solar cell of claim 13, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer.
16. The solar cell of claim 1, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer.
17. The solar cell of claim 1 , wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-l,4-phenylene- vinylene).
18. A bulk heterojunction material comprising: an organic absorber; and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals and disposed within the organic absorber.
19. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprises less than about 75 weight percent of the bulk heterojunction material.
20. The bulk heterojunction material of claim 19, wherein the plurality of group IV nanocrystals comprises between about 50 weight percent and 70 weight percent of the bulk heterojunction material.
21. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
22. The bulk heterojunction material of claim 21 , wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
23. The bulk heterojunction material of claim 21 , wherein a portion of the plurality of the group IV nanocrystals have a largest particle dimension within the range of about 2 nanometers to about 5 nanometers. 22
24. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
25. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
26. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise silicon-germanium nanocrystals.
27. The bulk heterojunction material of claim 18, wherein at least a portion of the plurality of group rV nanocrystals are doped.
28. The bulk heterojunction material of claim 18, wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
29. The bulk heterojunction material of claim 28, wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol.
30. The bulk heterojunction material of claim 28, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer.
31. The bulk heterojunction material of claim 18, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer.
32. The bulk heterojunction material of claim 18, wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3 ',7'-dimethyloctyloxy)-l ,4-phenylene- vinylene).
33. A method of forming a bulk heterojunction material, the method comprising: immersing a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals in an organic absorber.
34. The method of claim 33 further comprising capping at least a portion of the plurality of group IV nanocrystals with a reagent.
35. The method of claim 33 further comprising doping at least a portion of the plurality of group IV nanocrystals.
36. The method of claim 33, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
37. The method of claim 33, wherein a portion of the plurality of group IV nanocrystals have a largest dimension within the range of about 2 nanometers to about 5 nanometers. 23
38. The method of claim 33, wherein the plurality of group IV nanocrystals comprises silicon nanocrystals.
39. The method of claim 33, wherein the plurality of group IV nanocrystals comprises germanium nanocrystals.
40. The method of claim 33, wherein the plurality of group IV nanocrystals comprises silicon-germanium nanocrystals.
41. A method of forming a solar cell, the method comprising: depositing a layer of a bulk heterojunction material on to a first electrode having a first work function; and positioning a second electrode having a second work function, which differs from the first work function, on top of the layer of bulk heterojunction material, wherein the bulk heterojunction material comprises a combination of an organic absorber and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals.
42. The method of claim 41 , wherein depositing a layer of a bulk heterojunction material comprises depositing a 75 nm to 200 nm thick layer of the bulk heterojunction material.
43. The method of claim 41, wherein the plurality of group IV nanocrytals comprises less than about 75 weight percent of the heterojunction material.
44. The method of claim 41 , wherein the plurality of group IV nanocrystals include a variety of particle sizes.
45. The method of claim 41 , wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
46. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
47. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
48. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise silicon- germanium nanocrystals.
49. The method of claim 41 , wherein at least a portion of the plurality of group IV nanocrystals are doped. 24
50. The method of claim 49, wherein group IV nanocrystals located near the first electrode and the second electrode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell.
51. The method of claim 41 , wherein the bulk heterojunction material further comprises heavily doped regions located near the first and second electrodes and a lightly doped region located therebetween.
52. The method of claim 41, wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
53. The method of claim 52 wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol. 54, The method of claim 52, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer. 55. The method of claim 41, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer. 56. The method of claim 41 , wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-l,4-phenylene- vinylene). 57. The method of claim 41 , wherein at least one of the first electrode and the second electrode is substantially transparent. 58. A solar cell comprising: a cathode; an anode; a bulk heterojunction material disposed between the cathode and the anode, the bulk heterojunction material comprising a combination of an organic absorber and a plurality of doped group IV nanocrystals, wherein at least one of the cathode and the anode is at least semi-transparent and the group IV nanocrystals located near the cathode and anode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell. 59. The solar cell of claim 58, wherein the bulk heterojunction material further comprises a heavily n-type doped region located near the cathode, a heavily p-type doped region located near the anode, and a lightly doped region located therebetween.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04821551A EP1676328A2 (en) | 2003-09-23 | 2004-09-23 | Organic solar cells including group iv nanocrystals and method of manufacture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50520003P | 2003-09-23 | 2003-09-23 | |
US60/505,200 | 2003-09-23 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005083811A2 WO2005083811A2 (en) | 2005-09-09 |
WO2005083811A3 WO2005083811A3 (en) | 2005-12-29 |
WO2005083811B1 true WO2005083811B1 (en) | 2006-03-16 |
Family
ID=34910663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/031611 WO2005083811A2 (en) | 2003-09-23 | 2004-09-23 | Organic solar cells including group iv nanocrystals and method of manufacture |
Country Status (3)
Country | Link |
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US (1) | US20050061363A1 (en) |
EP (1) | EP1676328A2 (en) |
WO (1) | WO2005083811A2 (en) |
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2004
- 2004-09-23 WO PCT/US2004/031611 patent/WO2005083811A2/en active Application Filing
- 2004-09-23 EP EP04821551A patent/EP1676328A2/en not_active Withdrawn
- 2004-09-23 US US10/949,262 patent/US20050061363A1/en not_active Abandoned
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