WO2005083811B1 - Organic solar cells including group iv nanocrystals and method of manufacture - Google Patents

Organic solar cells including group iv nanocrystals and method of manufacture

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Publication number
WO2005083811B1
WO2005083811B1 PCT/US2004/031611 US2004031611W WO2005083811B1 WO 2005083811 B1 WO2005083811 B1 WO 2005083811B1 US 2004031611 W US2004031611 W US 2004031611W WO 2005083811 B1 WO2005083811 B1 WO 2005083811B1
Authority
WO
WIPO (PCT)
Prior art keywords
nanocrystals
group
bulk heterojunction
heterojunction material
solar cell
Prior art date
Application number
PCT/US2004/031611
Other languages
French (fr)
Other versions
WO2005083811A2 (en
WO2005083811A3 (en
Filing date
Publication date
Application filed filed Critical
Priority to EP04821551A priority Critical patent/EP1676328A2/en
Publication of WO2005083811A2 publication Critical patent/WO2005083811A2/en
Publication of WO2005083811A3 publication Critical patent/WO2005083811A3/en
Publication of WO2005083811B1 publication Critical patent/WO2005083811B1/en

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Abstract

An improved organic solar cell converts light into electricity. The organic solar cell includes a cathode, an anode, and a bulk heterojunction material disposed therebetween. The bulk heterojuncton material includes a plurality of group IV nanocrystals (e.g., silicon nanocrystals) disposed within an organic absorber (e.g., an organic polymer).

Claims

20
AMENDED CLAIMS
[received by the International Bureau on 23 December 2005 (23.12.2005) :. Original claims 1 -57 have been replaced by amended claims 1-59]. 1. A solar cell comprising: a cathode; an anode; a bulk heterojunction material disposed between the cathode and the anode, the bulk heterojunction material comprising a combination of an organic absorber and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals, wherein at least one of the cathode and the anode is at least semi-transparent.
2. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprises less than about 75 weight percent of the bulk heterojunction material.
3. The solar cell of claim 2, wherein the plurality of group IV nanocrystals comprises between about 50 weight percent and 70 weight percent of the bulk heterojunction material.
4. The solar cell of claim 1, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
5. The solar cell of claim 4, wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
6. The solar cell of claim 4, wherein a portion of the plurality of the group IV nanocrystals have a largest particle dimension within the range of about 2 nanometers to about 5 nanometers.
7. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
8. The solar cell of claim 1, wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
9. The solar cell of claim 1 , wherein the plurality of group IV nanocrystals comprise silicon- germanium nanocrystals.
10. The solar cell of claim 1 , wherein at least a portion of the plurality of group IV nanocrystals are doped.
11. The solar cell of claim 10, wherein group IV nanocrystals located near the cathode and anode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell.
12. The solar cell of claim 1, wherein the bulk heteroj unction material further comprises a heavily n-type doped region located near the cathode, a heavily p-type doped region located near the anode, and a lightly doped region located therebetween.
13. The solar cell of claim 1 , wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
14. The solar cell of claim 13, wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol.
15. The solar cell of claim 13, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer.
16. The solar cell of claim 1, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer.
17. The solar cell of claim 1 , wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-l,4-phenylene- vinylene).
18. A bulk heterojunction material comprising: an organic absorber; and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals and disposed within the organic absorber.
19. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprises less than about 75 weight percent of the bulk heterojunction material.
20. The bulk heterojunction material of claim 19, wherein the plurality of group IV nanocrystals comprises between about 50 weight percent and 70 weight percent of the bulk heterojunction material.
21. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
22. The bulk heterojunction material of claim 21 , wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
23. The bulk heterojunction material of claim 21 , wherein a portion of the plurality of the group IV nanocrystals have a largest particle dimension within the range of about 2 nanometers to about 5 nanometers. 22
24. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
25. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
26. The bulk heterojunction material of claim 18, wherein the plurality of group IV nanocrystals comprise silicon-germanium nanocrystals.
27. The bulk heterojunction material of claim 18, wherein at least a portion of the plurality of group rV nanocrystals are doped.
28. The bulk heterojunction material of claim 18, wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
29. The bulk heterojunction material of claim 28, wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol.
30. The bulk heterojunction material of claim 28, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer.
31. The bulk heterojunction material of claim 18, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer.
32. The bulk heterojunction material of claim 18, wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3 ',7'-dimethyloctyloxy)-l ,4-phenylene- vinylene).
33. A method of forming a bulk heterojunction material, the method comprising: immersing a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals in an organic absorber.
34. The method of claim 33 further comprising capping at least a portion of the plurality of group IV nanocrystals with a reagent.
35. The method of claim 33 further comprising doping at least a portion of the plurality of group IV nanocrystals.
36. The method of claim 33, wherein the plurality of group IV nanocrystals include a variety of particle sizes.
37. The method of claim 33, wherein a portion of the plurality of group IV nanocrystals have a largest dimension within the range of about 2 nanometers to about 5 nanometers. 23
38. The method of claim 33, wherein the plurality of group IV nanocrystals comprises silicon nanocrystals.
39. The method of claim 33, wherein the plurality of group IV nanocrystals comprises germanium nanocrystals.
40. The method of claim 33, wherein the plurality of group IV nanocrystals comprises silicon-germanium nanocrystals.
41. A method of forming a solar cell, the method comprising: depositing a layer of a bulk heterojunction material on to a first electrode having a first work function; and positioning a second electrode having a second work function, which differs from the first work function, on top of the layer of bulk heterojunction material, wherein the bulk heterojunction material comprises a combination of an organic absorber and a plurality of group IV nanocrystals selected from the group consisting of silicon nanocrystals, germanium nanocrystals, and silicon-germanium nanocrystals.
42. The method of claim 41 , wherein depositing a layer of a bulk heterojunction material comprises depositing a 75 nm to 200 nm thick layer of the bulk heterojunction material.
43. The method of claim 41, wherein the plurality of group IV nanocrytals comprises less than about 75 weight percent of the heterojunction material.
44. The method of claim 41 , wherein the plurality of group IV nanocrystals include a variety of particle sizes.
45. The method of claim 41 , wherein each of the plurality of group IV nanocrystals has a largest particle dimension which is less than about 20 nanometers.
46. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise silicon nanocrystals.
47. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise germanium nanocrystals.
48. The method of claim 41 , wherein the plurality of group IV nanocrystals comprise silicon- germanium nanocrystals.
49. The method of claim 41 , wherein at least a portion of the plurality of group IV nanocrystals are doped. 24
50. The method of claim 49, wherein group IV nanocrystals located near the first electrode and the second electrode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell.
51. The method of claim 41 , wherein the bulk heterojunction material further comprises heavily doped regions located near the first and second electrodes and a lightly doped region located therebetween.
52. The method of claim 41, wherein at least a portion of the plurality of group IV nanocrystals are capped with a reagent.
53. The method of claim 52 wherein the reagent is selected from the group consisting of alkyl lithium, a grignard, or an alcohol. 54, The method of claim 52, wherein the reagent is selected from the group consisting of an electroactive chelating agent, a heterocyclic aromatic molecule, and a dendrimer polymer. 55. The method of claim 41, wherein the organic absorber comprises a polymer, a dendrimer, or a macromer. 56. The method of claim 41 , wherein the organic absorber is selected from the group consisting of poly (e-hexylthiophene), poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene], and poly(2-methoxy-5-(3',7'-dimethyloctyloxy)-l,4-phenylene- vinylene). 57. The method of claim 41 , wherein at least one of the first electrode and the second electrode is substantially transparent. 58. A solar cell comprising: a cathode; an anode; a bulk heterojunction material disposed between the cathode and the anode, the bulk heterojunction material comprising a combination of an organic absorber and a plurality of doped group IV nanocrystals, wherein at least one of the cathode and the anode is at least semi-transparent and the group IV nanocrystals located near the cathode and anode are more heavily doped than the group IV nanocrystals located near a center position of the solar cell. 59. The solar cell of claim 58, wherein the bulk heterojunction material further comprises a heavily n-type doped region located near the cathode, a heavily p-type doped region located near the anode, and a lightly doped region located therebetween.
PCT/US2004/031611 2003-09-23 2004-09-23 Organic solar cells including group iv nanocrystals and method of manufacture WO2005083811A2 (en)

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EP04821551A EP1676328A2 (en) 2003-09-23 2004-09-23 Organic solar cells including group iv nanocrystals and method of manufacture

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US50520003P 2003-09-23 2003-09-23
US60/505,200 2003-09-23

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WO2005083811A3 WO2005083811A3 (en) 2005-12-29
WO2005083811B1 true WO2005083811B1 (en) 2006-03-16

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