WO2005066792A3 - Non-volatile memory and method with memory planes alignment - Google Patents

Non-volatile memory and method with memory planes alignment Download PDF

Info

Publication number
WO2005066792A3
WO2005066792A3 PCT/US2004/043377 US2004043377W WO2005066792A3 WO 2005066792 A3 WO2005066792 A3 WO 2005066792A3 US 2004043377 W US2004043377 W US 2004043377W WO 2005066792 A3 WO2005066792 A3 WO 2005066792A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory
logical
logical unit
versions
plane
Prior art date
Application number
PCT/US2004/043377
Other languages
French (fr)
Other versions
WO2005066792A2 (en
Inventor
Sergey Anatolievich Gorobets
Peter John Smith
Alan David Bennett
Original Assignee
Sandisk Corp
Sergey Anatolievich Gorobets
Peter John Smith
Alan David Bennett
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/750,155 external-priority patent/US7139864B2/en
Application filed by Sandisk Corp, Sergey Anatolievich Gorobets, Peter John Smith, Alan David Bennett filed Critical Sandisk Corp
Priority to EP04815452A priority Critical patent/EP1704483A2/en
Priority to JP2006547386A priority patent/JP4933269B2/en
Publication of WO2005066792A2 publication Critical patent/WO2005066792A2/en
Publication of WO2005066792A3 publication Critical patent/WO2005066792A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

A non-volatile memory is constituted from a set of memory planes, each having its own set of read/write circuits so that the memory planes can operate in parallel. The memory is further organized into erasable blocks, each for storing a logical group of logical units of data. In updating a logical unit, all versions of a logical unit are maintained in the same plane as the original. Preferably, all versions of a logical unit are aligned within a plane so that they are all serviced by the same set of sensing circuits. In a subsequent garbage collection operation, the latest version of the logical unit need not be retrieved from a different plane or a different set of sensing circuits, otherwise resulting in reduced performance. In one embodiment, any gaps left after alignment are padded by copying latest versions of logical units in sequential order thereto.
PCT/US2004/043377 2003-12-30 2004-12-21 Non-volatile memory and method with memory planes alignment WO2005066792A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04815452A EP1704483A2 (en) 2003-12-30 2004-12-21 Non-volatile memory and method with memory planes alignment
JP2006547386A JP4933269B2 (en) 2003-12-30 2004-12-21 Non-volatile memory and method with memory plane array

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/750,155 US7139864B2 (en) 2003-12-30 2003-12-30 Non-volatile memory and method with block management system
US10/750,155 2003-12-30
US10/917,888 2004-08-13
US10/917,888 US20050141313A1 (en) 2003-12-30 2004-08-13 Non-volatile memory and method with memory planes alignment

Publications (2)

Publication Number Publication Date
WO2005066792A2 WO2005066792A2 (en) 2005-07-21
WO2005066792A3 true WO2005066792A3 (en) 2006-02-09

Family

ID=34753195

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/043377 WO2005066792A2 (en) 2003-12-30 2004-12-21 Non-volatile memory and method with memory planes alignment

Country Status (4)

Country Link
EP (1) EP1704483A2 (en)
KR (1) KR20060134011A (en)
TW (1) TWI272487B (en)
WO (1) WO2005066792A2 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US9104315B2 (en) 2005-02-04 2015-08-11 Sandisk Technologies Inc. Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage
JP4751163B2 (en) * 2005-09-29 2011-08-17 株式会社東芝 Memory system
US7870231B2 (en) * 2006-07-21 2011-01-11 Qualcomm Incorporated Efficiently assigning precedence values to new and existing QoS filters
KR100825802B1 (en) * 2007-02-13 2008-04-29 삼성전자주식회사 Data write method of non-volatile memory device copying data having logical pages prior to logical page of write data from data block
US8898412B2 (en) * 2007-03-21 2014-11-25 Hewlett-Packard Development Company, L.P. Methods and systems to selectively scrub a system memory
US8634470B2 (en) 2007-07-24 2014-01-21 Samsung Electronics Co., Ltd. Multimedia decoding method and multimedia decoding apparatus based on multi-core processor
KR101297563B1 (en) 2007-11-15 2013-08-19 삼성전자주식회사 Storage management method and storage management system
KR100982440B1 (en) * 2008-06-12 2010-09-15 (주)명정보기술 System for managing data in single flash memory
US8285970B2 (en) * 2008-11-06 2012-10-09 Silicon Motion Inc. Method for managing a memory apparatus, and associated memory apparatus thereof
JP4956593B2 (en) 2009-09-08 2012-06-20 株式会社東芝 Memory system
US8626989B2 (en) * 2011-02-02 2014-01-07 Micron Technology, Inc. Control arrangements and methods for accessing block oriented nonvolatile memory
KR101419004B1 (en) * 2012-05-03 2014-07-11 주식회사 디에이아이오 Non-volatile memory system
WO2013171792A1 (en) * 2012-05-16 2013-11-21 Hitachi, Ltd. Storage control apparatus and storage control method
KR101987740B1 (en) 2012-07-09 2019-06-11 에스케이하이닉스 주식회사 Estimation method for channel characteristic of nonvolatile memory device
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
US10423353B2 (en) * 2016-11-11 2019-09-24 Micron Technology, Inc. Apparatuses and methods for memory alignment
TWI747349B (en) * 2020-06-30 2021-11-21 大陸商合肥沛睿微電子股份有限公司 Low-level formatting method of storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5860124A (en) * 1996-09-30 1999-01-12 Intel Corporation Method for performing a continuous over-write of a file in nonvolatile memory
US20020099904A1 (en) * 2001-01-19 2002-07-25 Conley Kevin M. Partial block data programming and reading operations in a non-volatile memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5860124A (en) * 1996-09-30 1999-01-12 Intel Corporation Method for performing a continuous over-write of a file in nonvolatile memory
US20020099904A1 (en) * 2001-01-19 2002-07-25 Conley Kevin M. Partial block data programming and reading operations in a non-volatile memory

Also Published As

Publication number Publication date
TW200601042A (en) 2006-01-01
TWI272487B (en) 2007-02-01
EP1704483A2 (en) 2006-09-27
WO2005066792A2 (en) 2005-07-21
KR20060134011A (en) 2006-12-27

Similar Documents

Publication Publication Date Title
WO2005066792A3 (en) Non-volatile memory and method with memory planes alignment
CN101739352B (en) Method for managing storage device and related storage device thereof
US9548108B2 (en) Virtual memory device (VMD) application/driver for enhanced flash endurance
US8954654B2 (en) Virtual memory device (VMD) application/driver with dual-level interception for data-type splitting, meta-page grouping, and diversion of temp files to ramdisks for enhanced flash endurance
TWI506431B (en) Virtual memory device (vmd) application/driver with dual-level interception for data-type splitting, meta-page grouping, and diversion of temp files to ramdisks for enhanced flash endurance
CN101233498B (en) Data operations in flash memories utilizing direct data file stroage
CN101382917B (en) Semiconductor storage device and method of controlling semiconductor storage device
US7516296B2 (en) Flash memory storage device and read/write method
US8041883B2 (en) Restoring storage devices based on flash memories and related circuit, system, and method
US20160070474A1 (en) Data-Retention Controller/Driver for Stand-Alone or Hosted Card Reader, Solid-State-Drive (SSD), or Super-Enhanced-Endurance SSD (SEED)
CN102508788B (en) SSD (solid state drive) and SSD garbage collection method and device
US20060129750A1 (en) Method and apparatus for storing multimedia data in nonvolatile storage device in units of blocks
CN102541757B (en) Write cache method, cache synchronization method and device
JP2008527586A (en) Group and align on-chip data
CN101124555A (en) Non-volatile memory and method with multi-stream updating
WO2004061673A3 (en) Method and apparatus for block oriented memory management provided in smart card controllers
WO2005103878A3 (en) Method and system for compression of files for storage and operation on compressed files
TW200608201A (en) Nonvolatile storage device and data write method
WO2007076378A3 (en) Dual mode access for non-volatile storage devices
TWI604307B (en) Data storage device and flash memory control method
US20130346674A1 (en) Data writing method, memory controller and memory storage device
US11204697B2 (en) Wear leveling in solid state devices
TW200601041A (en) Non-volatile memory and method with control data management
US20070100852A1 (en) File system management for integrated NOR and NAND flash memory
WO2009140157A3 (en) System and method for recovering information in nand gate array memory systems

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020067013315

Country of ref document: KR

Ref document number: 2006547386

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

WWE Wipo information: entry into national phase

Ref document number: 2004815452

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 200480042138.2

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2004815452

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067013315

Country of ref document: KR