WO2005040459B1 - Electroplating compositions and methods for electroplating - Google Patents
Electroplating compositions and methods for electroplatingInfo
- Publication number
- WO2005040459B1 WO2005040459B1 PCT/US2004/033229 US2004033229W WO2005040459B1 WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1 US 2004033229 W US2004033229 W US 2004033229W WO 2005040459 B1 WO2005040459 B1 WO 2005040459B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- seed layer
- electroplating
- sulfuric acid
- deposition
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title claims abstract 12
- 239000000203 mixture Substances 0.000 title claims abstract 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910052802 copper Inorganic materials 0.000 claims abstract 9
- 239000010949 copper Substances 0.000 claims abstract 9
- 238000000151 deposition Methods 0.000 claims abstract 4
- 230000001629 suppression Effects 0.000 claims abstract 4
- 238000001465 metallisation Methods 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000012530 fluid Substances 0.000 claims 4
- 238000005137 deposition process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 230000002708 enhancing Effects 0.000 claims 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
Abstract
Disclosed are electroplating compositions and methods for filling recessed microstructures of a microelectronic workpiece (101), such as a semiconductor wafer, with metallization. The electroplating compositions may comprise a mixture of copper and sulfuric acid wherein the ratio of copper concentration to sulfuric acid concentration is equal to from about 0.3 to about 0.8 g/L (grams per liter of solution). The disclosed electroplating compositions may also comprise a mixture of copper and sulfuric acid wherein the copper concentration is near its solubility limit when the sulfuric acid concentration is from about 65 to about 150 g/L. Such electroplating compositions may also include conventional additives, such as accelerators, suppressors, halides and/or levelers. Methods for electrochemically depositing conductive materials in features, such as trenches and/or contact holes formed on semiconductor workpieces are disclosed, including methods suited for use in multiple anode reactors using the disclosed electroplating solutions.
Claims
36
AMENDED CLAIMS
[received by the International Bureau on 09 January 2006 (09.01.06); original claims 66 and 68 amended; remaining claims unchanged (1 page)]
acid is equal to about 0.3 to about 0.8, a copper-deposition suppressor, and a copper- deposition accelerator and wherein only electroplating compositions comprising a mixture of copper and sulfuric acid wherein the ratio in g/L of copper to acid is equal to about 0.3 to about 0.8 are used to deposit copper on the workpiece.
66. A process for applying a metallization interconnect structure, comprising: providing a workpiece on which a metal seed layer has been formed using a first deposition process; enhancing the seed layer by electrochemically depositing additional metal on the seed layer within a principal fluid chamber of a reactor to provide an enhanced seed layer using a deposition process comprising supplying electroplating power to a plurality of concentric anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece; and electrolytically depositing a metal on the enhanced seed layer utilizing an electroplating composition comprising about 35 to about 60 g/L copper, about 65 to about 150 g/L sulfuric acid, and a glycol-based suppressor.
67. The process of claim 66 wherein the electroplating composition comprises from about 35 to about 60 g/L copper, from about 65 to about 150 g/L sulfuric acid, and from about 2 to about 30 ml/L of a copper-deposition suppressor.
68. A process for applying a metallization interconnect structure, comprising: providing a workpiece on which a metal seed layer has been formed; enhancing the seed layer by electrochemically depositing additional metal on the seed layer within a principal fluid chamber of a reactor to provide an enhanced seed layer using a deposition process comprising supplying electroplating power to a plurality of electrodes within the principal fluid flow chamber,
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04794546A EP1680535A4 (en) | 2003-10-16 | 2004-10-08 | Electroplating compositions and methods for electroplating |
| JP2006535564A JP2007508461A (en) | 2003-10-16 | 2004-10-08 | Electroplating composition and electroplating method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/688,420 | 2003-10-16 | ||
| US10/688,420 US20050081744A1 (en) | 2003-10-16 | 2003-10-16 | Electroplating compositions and methods for electroplating |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2005040459A2 WO2005040459A2 (en) | 2005-05-06 |
| WO2005040459A3 WO2005040459A3 (en) | 2006-01-12 |
| WO2005040459B1 true WO2005040459B1 (en) | 2006-03-02 |
Family
ID=34521165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2004/033229 WO2005040459A2 (en) | 2003-10-16 | 2004-10-08 | Electroplating compositions and methods for electroplating |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20050081744A1 (en) |
| EP (1) | EP1680535A4 (en) |
| JP (1) | JP2007508461A (en) |
| CN (1) | CN1867703A (en) |
| TW (1) | TW200516176A (en) |
| WO (1) | WO2005040459A2 (en) |
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| US8852417B2 (en) | 1999-04-13 | 2014-10-07 | Applied Materials, Inc. | Electrolytic process using anion permeable barrier |
| US20060157355A1 (en) * | 2000-03-21 | 2006-07-20 | Semitool, Inc. | Electrolytic process using anion permeable barrier |
| US8236159B2 (en) | 1999-04-13 | 2012-08-07 | Applied Materials Inc. | Electrolytic process using cation permeable barrier |
| US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
| US7628898B2 (en) * | 2001-03-12 | 2009-12-08 | Semitool, Inc. | Method and system for idle state operation |
| EP1422320A1 (en) * | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
| US7232513B1 (en) * | 2004-06-29 | 2007-06-19 | Novellus Systems, Inc. | Electroplating bath containing wetting agent for defect reduction |
| TW200632147A (en) * | 2004-11-12 | 2006-09-16 | ||
| US20070043474A1 (en) * | 2005-08-17 | 2007-02-22 | Semitool, Inc. | Systems and methods for predicting process characteristics of an electrochemical treatment process |
| US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
| TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
| JP2009041097A (en) * | 2007-08-10 | 2009-02-26 | Rohm & Haas Electronic Materials Llc | Copper plating method |
| JP5442188B2 (en) * | 2007-08-10 | 2014-03-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Copper plating solution composition |
| US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
| US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
| US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
| US8268155B1 (en) * | 2009-10-05 | 2012-09-18 | Novellus Systems, Inc. | Copper electroplating solutions with halides |
| TWI397615B (en) * | 2010-04-01 | 2013-06-01 | Zhen Ding Technology Co Ltd | Plating apparatus |
| EP2518187A1 (en) * | 2011-04-26 | 2012-10-31 | Atotech Deutschland GmbH | Aqueous acidic bath for electrolytic deposition of copper |
| US9416459B2 (en) * | 2011-06-06 | 2016-08-16 | United Microelectronics Corp. | Electrical chemical plating process |
| US9768060B2 (en) * | 2014-10-29 | 2017-09-19 | Applied Materials, Inc. | Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD |
| US10648096B2 (en) | 2014-12-12 | 2020-05-12 | Infineon Technologies Ag | Electrolyte, method of forming a copper layer and method of forming a chip |
| US9758896B2 (en) | 2015-02-12 | 2017-09-12 | Applied Materials, Inc. | Forming cobalt interconnections on a substrate |
| US10749278B2 (en) | 2016-01-15 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of electroplating metal into recessed feature and electroplating layer in recessed feature |
| CN107326407B (en) * | 2017-07-25 | 2018-11-16 | 上海新阳半导体材料股份有限公司 | Leveling agent, the metal plating compositions containing it and preparation method, application |
| CN107858728B (en) * | 2017-12-20 | 2019-08-23 | 武汉新芯集成电路制造有限公司 | TSV electro-plating method |
| TWI741466B (en) * | 2019-12-27 | 2021-10-01 | 鉑識科技股份有限公司 | Nano-twinned crystal film prepared by water/alcohol-soluble organic additives and method of fabricating the same |
| CN114214682B (en) * | 2021-12-22 | 2023-05-30 | 东莞市金瑞五金股份有限公司 | Electroplating process and electroplating equipment for copper plating of workpiece |
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| US5252196A (en) * | 1991-12-05 | 1993-10-12 | Shipley Company Inc. | Copper electroplating solutions and processes |
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| EP1308541A1 (en) * | 2001-10-04 | 2003-05-07 | Shipley Company LLC | Plating bath and method for depositing a metal layer on a substrate |
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-
2003
- 2003-10-16 US US10/688,420 patent/US20050081744A1/en not_active Abandoned
-
2004
- 2004-09-21 TW TW093128537A patent/TW200516176A/en unknown
- 2004-10-08 WO PCT/US2004/033229 patent/WO2005040459A2/en active Application Filing
- 2004-10-08 EP EP04794546A patent/EP1680535A4/en not_active Withdrawn
- 2004-10-08 JP JP2006535564A patent/JP2007508461A/en active Pending
- 2004-10-08 CN CN200480029839.2A patent/CN1867703A/en active Pending
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