WO2005024962A2 - Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung - Google Patents
Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung Download PDFInfo
- Publication number
- WO2005024962A2 WO2005024962A2 PCT/DE2004/001854 DE2004001854W WO2005024962A2 WO 2005024962 A2 WO2005024962 A2 WO 2005024962A2 DE 2004001854 W DE2004001854 W DE 2004001854W WO 2005024962 A2 WO2005024962 A2 WO 2005024962A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- epitaxial layer
- layer sequence
- thin
- emitting diode
- electromagnetic radiation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000011521 glass Substances 0.000 claims abstract description 36
- 230000005855 radiation Effects 0.000 claims abstract description 30
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000001459 lithography Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 21
- 230000007704 transition Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000006223 plastic coating Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Definitions
- the invention relates to a thin-film light-emitting diode chip with an epitaxial layer sequence arranged on a carrier element, which has an active zone generating electromagnetic radiation, and with a reflecting layer arranged on a main surface of the epitaxial layer sequence facing the carrier element, which layer generates at least a part of the epitaxial layer sequence electromagnetic radiation reflected back into this.
- a thin-film light-emitting diode chip is characterized in particular by the following characteristic features: a reflective layer is applied or formed on a first main surface of a radiation-generating epitaxial layer sequence that faces a carrier element and reflects back at least some of the electromagnetic radiation generated in the epitaxial layer sequence ; the epitaxial layer sequence has a thickness in the range of 20 ⁇ m or less, in particular in the range of 10 ⁇ m; and the epitaxial layer sequence contains at least one semiconductor layer with at least one surface which has a mixing structure which ideally leads to an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, i.e. it exhibits a stochastic scattering behavior that is as ergodic as possible.
- the decoupling of radiation from semiconductor chips emitting electromagnetic radiation is lossy, inter alia, owing to reflection at the interfaces of the semiconductor chip with its surroundings due to the jump in the refractive index there (Fresnel losses).
- a known possibility for improving the coupling out of radiation is the structuring of semiconductor chip surfaces.
- Surface structuring for increasing transmission on chip surfaces is known, for example, from US Pat. No. 5,779,924 A.
- the luminescence diode described there comprises a semiconductor chip, the outermost semiconductor layer of which has a three-dimensional structuring. This facilitates the coupling out of light from the semiconductor chip itself, so that light generated in the chip can increasingly pass from the semiconductor chip into the surrounding epoxy resin.
- a disadvantage of this method is that complex etching processes have to be used to produce the surface structuring of the semiconductor chip. This applies in particular to GaN-based semiconductor chips.
- the present invention is based on the object of specifying a thin-film light-emitting diode chip which has an improved coupling-out of radiation.
- Another object is to provide a method for producing such a radiation-emitting thin-film LED chip.
- a structured layer is arranged on a radiation decoupling surface of the epitaxial layer sequence facing away from the carrier element, which structured layer contains a glass material and comprises adjacent projections that taper in the direction away from the radiation decoupling surface, with a lateral grid dimension below one Wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence.
- the presence of a grid does not necessarily mean a regular grid. If, at least in part, there is an irregular rasterization of the projections, the raster dimension is preferably both in the mean and in its maximum size below a wavelength of electromagnetic radiation emitted from the epitaxial layer sequence.
- the structure of the structured layer is not optically resolved for the radiation; it's a virtual one smooth transition of the refractive index from the unstructured and thus monolithic region of the structured layer to the refractive index of the part of the structured layer that is furthest away from the radiation decoupling surface and thus approximately the refractive index of the surrounding medium.
- the structures of the structured layer thus cause a smooth transition of the refractive index at the interface between the surrounding medium and the structured layer.
- the refractive index gradient through which radiation generated in the epitaxial layer sequence must pass is small compared to an epitaxial layer sequence without a structured layer according to the invention.
- Layer / environment in the epitaxial layer sequence reflected back electromagnetic radiation is significantly reduced compared to the same system without a structured layer.
- the invention is particularly for thin film -
- the group of radiation-emitting and / or radiation-detecting chips based on InGaAlN particularly includes those chips in which the epitaxially produced semiconductor layer sequence, which as a rule has a layer sequence of different individual layers, contains at least one individual layer which is made of a material the III -V- compound semiconductor material system In x Al y Ga ⁇ -xy N with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
- the semiconductor layer sequence can have, for example, a conventional pn junction, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure).
- SQW structure single quantum well structure
- MQW structure multiple quantum well structure
- the invention is also suitable for use in radiation-emitting semiconductor chips on the Basis of other semiconductor material systems such as In x Al y Ga 1-xy P with O ⁇ x ⁇ l, O ⁇ y ⁇ l and x + y ⁇ 1 and other III -V or II -VI compound semiconductor systems.
- the width of the projections and the spacing of directly adjacent projections from one another are advantageously below a wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence.
- the height of the projections is preferably below a wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence.
- the refractive index of the layer lies between the refractive index of a material of a side of the epitaxial layer sequence adjacent to the radiation decoupling surface and the refractive index of a medium provided for the surroundings of the thin-film light-emitting diode chip.
- the structuring preferably has projections arranged periodically for the most part.
- the projections are convex when viewed from the outside. This results in a particularly “smooth" transition of the refractive index at the structured layer / environment interface.
- the glass material is a spin-on glass.
- This material is a solidified sol which comprises, for example, silicon oxide.
- the properties and processing possibilities of spin-on glass are known to the person skilled in the art, for example from Quenzer et al. , "Anodic Bonding on Glass Layers Prepared by Spin-on Glass Process: Preparation Process and Experimental Results", Proceedings of Transducers * * Ol / Eurosensors XV, June 2001, the disclosure content of which is hereby incorporated by reference.
- the epitaxial layer sequence arranged on the carrier element is provided, a layer is applied to a radiation decoupling surface of the epitaxial layer sequence facing away from the carrier element, and a structure is introduced on at least part of the layer, the structuring lying side by side Projections tapering in the direction away from the radiation coupling-out area comprise a lateral grid dimension below a wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence.
- the layer is advantageously produced by applying a still liquid spin-on glass to the radiation decoupling surface and treating it thermally in such a way that the spin-on glass solidifies. This procedure can advantageously be carried out in the wafer assembly.
- the spin-on glass is applied by spinning and / or printing.
- spin coating can advantageously be carried out in the wafer assembly with little technical effort.
- the structuring is introduced into the layer by means of gray-scale lithography.
- Grayscale lithography usually involves an exposure step of the layer using a grayscale mask.
- Gray-tone masks as so-called “analog masks” enable different irradiance levels, so that three-dimensional analog structures, such as curved surfaces, can be generated in a single irradiation step.
- Sven Warnck "RELIEF - mass production of low-cost products with micro-relief surfaces using CD injection molding”
- VDI / VDE-Technologie scholar Informationstechnik GmbH No. 36-2002, the disclosure content of which is hereby described by Back reference is included.
- the structuring of the layer can in turn advantageously be carried out in the wafer assembly, so that both the application of the spin-on glass and its structuring are possible with relatively little technical effort, which enables inexpensive production.
- Figures la) - ld) a sequence of a method according to an embodiment using schematic sectional views of a thin-film LED chip in four different process stages.
- the same or equivalent components are each identified in the same way and provided with the same reference numerals.
- the layer thicknesses shown are not to be regarded as true to scale. Rather, they are exaggeratedly thick for better understanding and are not shown with the actual thickness ratios to one another.
- a carrier element 2 which has an active zone 8 that generates electromagnetic radiation
- a ner provided on a main surface of the epitaxial layer sequence 6 facing towards the carrier element 2, which reflects at least some of the electromagnetic radiation generated in the epitaxial layer sequence 6 back into it (see FIG. 1 a).
- the thin-film light-emitting diode chips are usually provided and processed in a not yet isolated state, that is to say in the wafer network with a large number of thin-film light-emitting diode chips of basically the same type, and only separated at a later stage to separate thin-film light-emitting diode chips ,
- a spin-on glass is subsequently applied, for example by spin coating, to a radiation decoupling surface 7 of the epitaxial layer sequence 6 facing away from the carrier element 2 (cf. FIG. 1b).
- Roughness on the radiation decoupling surface 7 of the epitaxial layer sequence 6, which can be introduced undesirably due to production or specifically for homogenizing radiation to be coupled out of the epitaxial layer sequence, are largely planarized by a spin-on glass, that is to say smoothed out by filling in depressions.
- Layer 1 made of spin-on glass is then structured by gray-scale lithography (cf. FIG. 1c, d).
- spin-on glass In addition to spin-on glass, other glass materials or other materials transparent to radiation generated in the epitaxial layer sequence 6 can be structured using the gray tone lithography. Spin-on glass is particularly well suited for this process.
- a structure with projections 5 lying side by side and tapering in the direction away from the radiation coupling-out surface 7 of the epitaxial layer sequence 6 is produced, with a lateral grid dimension below a wavelength of an electromagnetic radiation generated in the epitaxial layer sequence 6.
- the height of the projections in the direction away from the coupling-out surface is less than a wavelength of electromagnetic radiation emitted from the epitaxial layer sequence 6, preferably approximately equal to the grid dimension.
- the projections 5 are not optically resolved for electromagnetic radiation generated in the epitaxial layer sequence 6; There are no individual obstacles for the radiation, so to speak, in the form of the projections 5. Rather, the electromagnetic radiation coupled from the epitaxial layer sequence 6 into the structured spin-on-glass layer 1 "sees" a smooth transition of the refractive index from the unstructured area of the structured spin -on-glass layer 1 with the refractive index of the spin-on-glass material per se towards the refractive index of the medium (here air) adjacent to the structured spin-on-glass layer 1 on its side facing away from the epitaxial layer sequence 6 According to the current understanding, the material of the structured spin-on-glass layer 1 is increasingly “thinned” in the direction away from the epitaxial layer sequence 6 by the surrounding medium and, at the regions furthest away from the epitaxial layer sequence, has at least approximately the refractive index of the surrounding one Medium. The proportion of electromagnetic radiation reflected back in the epitaxial layer sequence 6 / structured spin-on-
- An electrical contact layer 9 adjoining the radiation decoupling surface 7 is exposed during or after the production process of the structured spin-on-glass layer 1. laid or not covered with material of the structured spin-on-glass layer 1.
- the invention is of course not limited to the specifically described exemplary embodiments, but extends to all methods and devices which have the basic features of the invention.
- the invention can be used for thin-film light-emitting diode chips of different geometry, different structures and different semiconductor material material systems.
- a structured spin-on-glass layer 1 according to the invention can also be used in the case of light-emitting diode chips encapsulated with plastic.
- a structured glass layer according to the invention in particular a structured spin-on-glass layer, can be applied to semiconductor material at the semiconductor / plastic potting interfaces.
- structured layers according to the invention for reducing Fresnel losses can be applied to a number of optical systems such as micro-optics at solid / air interfaces.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04762694A EP1658644A2 (de) | 2003-08-29 | 2004-08-19 | Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung |
JP2006524216A JP2007504640A (ja) | 2003-08-29 | 2004-08-19 | 薄膜発光ダイオードおよびその製造方法 |
US10/567,935 US20060237734A1 (en) | 2003-08-29 | 2004-08-19 | Thin-layer light-emitting diode chip and method for the production thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10340271.3 | 2003-08-29 | ||
DE10340271.3A DE10340271B4 (de) | 2003-08-29 | 2003-08-29 | Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005024962A2 true WO2005024962A2 (de) | 2005-03-17 |
WO2005024962A3 WO2005024962A3 (de) | 2005-06-16 |
Family
ID=34258319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2004/001854 WO2005024962A2 (de) | 2003-08-29 | 2004-08-19 | Dünnschicht-leuchtdiodenchip und verfahren zu seiner herstellung |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060237734A1 (de) |
EP (1) | EP1658644A2 (de) |
JP (1) | JP2007504640A (de) |
KR (1) | KR20060135599A (de) |
CN (1) | CN1846316A (de) |
DE (1) | DE10340271B4 (de) |
TW (1) | TWI243491B (de) |
WO (1) | WO2005024962A2 (de) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007009042A1 (en) * | 2005-07-11 | 2007-01-18 | Gelcore Llc | Laser lift-off led with improved light extraction |
WO2007031929A1 (en) * | 2005-09-16 | 2007-03-22 | Koninklijke Philips Electronics N.V. | Method for manufacturing led wafer with light extracting layer |
EP1962350A1 (de) * | 2007-02-22 | 2008-08-27 | LEXEDIS Lighting GmbH | Emittierende Oberfläche von Leuchtdioden-Paketen |
WO2008114894A1 (en) * | 2007-03-19 | 2008-09-25 | Industry Foundation Of Chonnam National University | Light emitting diode with microlens |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI433343B (zh) * | 2004-06-22 | 2014-04-01 | Verticle Inc | 具有改良光輸出的垂直構造半導體裝置 |
DE102005048408B4 (de) * | 2005-06-10 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterkörper |
DE102007018837A1 (de) * | 2007-03-26 | 2008-10-02 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Lumineszenzdiodenchips und Lumineszenzdiodenchip |
KR100921466B1 (ko) * | 2007-08-30 | 2009-10-13 | 엘지전자 주식회사 | 질화물계 발광 소자 및 그 제조방법 |
DE102008050538B4 (de) * | 2008-06-06 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
US20100132404A1 (en) * | 2008-12-03 | 2010-06-03 | Progressive Cooling Solutions, Inc. | Bonds and method for forming bonds for a two-phase cooling apparatus |
DE102008062932A1 (de) | 2008-12-23 | 2010-06-24 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
CN101562224B (zh) * | 2009-05-05 | 2011-10-05 | 深圳华映显示科技有限公司 | 一种光源装置及其制造方法 |
KR101101858B1 (ko) * | 2010-05-27 | 2012-01-05 | 고려대학교 산학협력단 | 반도체 발광소자 및 그 제조방법 |
DE102018107615A1 (de) * | 2017-09-06 | 2019-03-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
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WO2001041225A2 (en) * | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
EP1271665A2 (de) * | 2001-06-25 | 2003-01-02 | Kabushiki Kaisha Toshiba | Lichtemittierende Halbleitervorrichtung |
EP1324399A2 (de) * | 2001-12-28 | 2003-07-02 | Kabushiki Kaisha Toshiba | Lichtemittierende Vorrichtung und Herstellungsverfahren |
EP1329961A2 (de) * | 2002-01-18 | 2003-07-23 | Kabushiki Kaisha Toshiba | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
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US5324550A (en) * | 1992-08-12 | 1994-06-28 | Hitachi, Ltd. | Pattern forming method |
JP3316062B2 (ja) * | 1993-12-09 | 2002-08-19 | 株式会社東芝 | 半導体発光素子 |
US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
JPH10116861A (ja) * | 1996-10-09 | 1998-05-06 | Texas Instr Japan Ltd | キャリアテープ、及びキャリアテープ製造方法 |
JP3448441B2 (ja) * | 1996-11-29 | 2003-09-22 | 三洋電機株式会社 | 発光装置 |
JP3469484B2 (ja) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JP2001044491A (ja) * | 1999-07-13 | 2001-02-16 | Korai Kagi Kofun Yugenkoshi | Led及びその製造方法 |
US7145721B2 (en) * | 2000-11-03 | 2006-12-05 | Mems Optical, Inc. | Anti-reflective structures |
JP2002217450A (ja) * | 2001-01-22 | 2002-08-02 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
JP4098568B2 (ja) * | 2001-06-25 | 2008-06-11 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2005508269A (ja) * | 2001-11-02 | 2005-03-31 | エムイーエムエス・オプティカル・インコーポレイテッド | グレースケールエッチングされたマスタモールドからマイクロ光学要素を製造する方法 |
US6610452B2 (en) | 2002-01-16 | 2003-08-26 | Xerox Corporation | Toner compositions with surface additives |
-
2003
- 2003-08-29 DE DE10340271.3A patent/DE10340271B4/de not_active Expired - Fee Related
-
2004
- 2004-08-19 KR KR1020067003984A patent/KR20060135599A/ko not_active Application Discontinuation
- 2004-08-19 EP EP04762694A patent/EP1658644A2/de not_active Withdrawn
- 2004-08-19 WO PCT/DE2004/001854 patent/WO2005024962A2/de active Application Filing
- 2004-08-19 JP JP2006524216A patent/JP2007504640A/ja active Pending
- 2004-08-19 US US10/567,935 patent/US20060237734A1/en not_active Abandoned
- 2004-08-19 CN CNA2004800248459A patent/CN1846316A/zh active Pending
- 2004-08-27 TW TW093125701A patent/TWI243491B/zh not_active IP Right Cessation
Patent Citations (4)
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WO2001041225A2 (en) * | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
EP1271665A2 (de) * | 2001-06-25 | 2003-01-02 | Kabushiki Kaisha Toshiba | Lichtemittierende Halbleitervorrichtung |
EP1324399A2 (de) * | 2001-12-28 | 2003-07-02 | Kabushiki Kaisha Toshiba | Lichtemittierende Vorrichtung und Herstellungsverfahren |
EP1329961A2 (de) * | 2002-01-18 | 2003-07-23 | Kabushiki Kaisha Toshiba | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren |
Non-Patent Citations (1)
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007009042A1 (en) * | 2005-07-11 | 2007-01-18 | Gelcore Llc | Laser lift-off led with improved light extraction |
CN101438422B (zh) * | 2005-07-11 | 2011-04-20 | 吉尔科有限公司 | 具有改善的光提取的激光剥离发光二极管 |
WO2007031929A1 (en) * | 2005-09-16 | 2007-03-22 | Koninklijke Philips Electronics N.V. | Method for manufacturing led wafer with light extracting layer |
EP1962350A1 (de) * | 2007-02-22 | 2008-08-27 | LEXEDIS Lighting GmbH | Emittierende Oberfläche von Leuchtdioden-Paketen |
WO2008114894A1 (en) * | 2007-03-19 | 2008-09-25 | Industry Foundation Of Chonnam National University | Light emitting diode with microlens |
Also Published As
Publication number | Publication date |
---|---|
US20060237734A1 (en) | 2006-10-26 |
TWI243491B (en) | 2005-11-11 |
DE10340271B4 (de) | 2019-01-17 |
WO2005024962A3 (de) | 2005-06-16 |
EP1658644A2 (de) | 2006-05-24 |
JP2007504640A (ja) | 2007-03-01 |
CN1846316A (zh) | 2006-10-11 |
KR20060135599A (ko) | 2006-12-29 |
TW200511616A (en) | 2005-03-16 |
DE10340271A1 (de) | 2005-04-14 |
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