WO2005006390A2 - System and method for in-situ flow verification and calibration - Google Patents
System and method for in-situ flow verification and calibration Download PDFInfo
- Publication number
- WO2005006390A2 WO2005006390A2 PCT/US2004/016142 US2004016142W WO2005006390A2 WO 2005006390 A2 WO2005006390 A2 WO 2005006390A2 US 2004016142 W US2004016142 W US 2004016142W WO 2005006390 A2 WO2005006390 A2 WO 2005006390A2
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- WIPO (PCT)
- Prior art keywords
- flow
- physical layer
- network physical
- control devices
- flow control
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000012795 verification Methods 0.000 title claims abstract description 44
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 21
- 238000004891 communication Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 66
- 230000008569 process Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000009530 blood pressure measurement Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000006855 networking Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/17—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters using calibrated reservoirs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/0092—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume for metering by volume
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/15—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters specially adapted for gas meters
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
Definitions
- the present invention relates generally to semiconductor processing equipment and, more particularly, to systems and methods for delivering contaminant- free, precisely metered quantities of process and purge gases to a semiconductor process chamber. Even more particularly, the present invention relates to a system and a method for in-situ verification and calibration of flow controller devices.
- wafer fabrication facilities are commonly organized to include areas in which chemical vapor deposition, plasma deposition, plasma etching, sputtering and other similar gas manufacturing processes are carried out.
- the processing tools be they chemical vapor deposition reactors, vacuum sputtering machines, plasma etchers or plasma enhanced chemical vapor deposition, must be supplied with various process gases. Pure gases must be supplied to the tools in contaminant-free, precisely metered quantities.
- the gases are stored in tanks, which are connected via piping or conduit to a gas box.
- the gas box delivers contaminant-free, precisely metered quantities of pure inert or reactant gases from the tanks of the fabrication facility to a process tool.
- the gas box, or gas metering system includes a plurality of gas paths having gas metering units, such as valves, pressure regulators and transducers, mass flow controllers and filters/purifiers. Each gas path has its own inlet for connection to separate sources of gas, but all of the gas paths converge into a single outlet, such as a gas manifold, for connection to the process tool.
- the changes in pressure ( ⁇ P) and temperature ( ⁇ T) of the gas in the chamber are measured and corrected to a standard temperature (To) and pressure (P 0 ).
- standard means “standard conditions”, usually defined as an "absolute” temperature of 273.15K and an “absolute” pressure of 1 atmosphere.
- the gas flow rate can then be calculated from the change in pressure over time ( ⁇ P/ ⁇ t) and the change in temperature over time ( ⁇ T/ ⁇ t) in the known volume.
- United States Patent No. 5,684,245 to Hinkle which is assigned to the assignee of the present invention, discloses and claims an apparatus for and method of measuring mass flow of a gas in a gas delivery system using the ROR method.
- MKS instruments Inc. of Andover, MA also provides ROR flow verifier products such as the Tru-FloTM In-Situ Mass Flow Verifier, and the GBRORTM (gas box rate-of-rise) In-Situ Mass Flow Verifier.
- the new and improved system and method will employ a ROR flow verifier.
- the new and improved system and method will preferably provide in-situ verification and calibration of flow control devices, so that the verification and calibration does not require removal of the flow control devices from the gas metering system.
- An exemplary embodiment of the present invention provides a system and method for in-situ verification and calibration of flow control devices that includes a first network physical layer connecting the flow control devices to a flow verification device.
- a controller of the flow verification device is programmed to communicate with each of the flow control devices through the first network physical layer, receive gas specific information and a transfer function from each of the flow control devices, and verify the flow of each flow control device.
- the controller of the flow verification device is further programmed to communicate with each of the flow control devices through the first network physical layer and, if necessary, calibrate the flow control devices.
- the verification and calibration of the flow control devices is preferably carried out based upon a single command provided through a tool controller connected to a second network physical layer connected to the flow control devices.
- FIG. 1 is a schematic illustration of a gas metering system according to the prior art and including mass flow controllers connected to a gas manifold and a mass flow verifier connected between the gas manifold and a vacuum pump;
- FIG. 2 is a schematic illustration of exemplary components of the mass flow verifier of Fig. 1;
- Fig. 3 is a graph of pressure versus time illustrating a method according to the prior art for verifying a flow rate of one of the mass flow controllers, as carried out by the mass flow verifier of Fig. 1 ;
- FIG. 4 is a schematic illustration of a gas metering system including an exemplary embodiment of a system according to the present disclosure for in-situ ⁇ verification and calibration of the mass flow controllers.
- the present disclosure provides a system 100 and a method for in-situ verification and calibration of fluid flow through a device-under-test (OUT), such as a mass flow controller (MFC).
- OUT device-under-test
- MFC mass flow controller
- the system 100 and method are particularly for use with gas metering systems for delivering contaminant-free, precisely metered quantities of process and purge gases to a semiconductor process chamber(s).
- the new and improved system 100 and method employ a rate-of-rise (ROR) flow verifier.
- ROR rate-of-rise
- the new and improved system 100 and method provide in-situ verification and calibration of the MFCs, so that the verification and calibration does not require removal of the MFCs from the gas metering system.
- a flow verification device 10 of the prior art is shown.
- the flow verification device 10 is shown connected between a gas manifold 52 and a vacuum pump 54 of a gas metering system 50.
- the gas metering system 50 also includes a plurality of mass flow controllers (MFC) 56 controlling the flow of gas through lines 58 connected to the gas manifold 52.
- MFC mass flow controllers
- the system 50 includes twelve (12) lines 58 connected to the gas manifold 52 and having MFCs 56.
- the system 50 can include more or less than twelve (12) lines 58, as desired.
- each of the MFCs 56 comprises a Pressure Insensitive type MFC (PiMFC) available from MKS Instruments of Andover, MA (http://www.rnksinst.com).
- the PiMFC includes technology improvements in functionality and performance to help users in semiconductor and high purity thin-film applications increase tool throughput and reduce overall system costs.
- the PiMFC provides real-time accurate flow control, that is insensitive to upstream and downstream pressure disturbances, through advanced physical modeling and digital control algorithms.
- the PiMFC enables real-time control of process gas flow, accuracy and repeatability is significantly improved over conventional digital based MFCs, resulting in better chamber matching.
- a pressure insensitive mass flow controller is also disclosed in co-pending U.S.
- the flow verification device 10 is used to verify the rate of flow produced by the MFCs.
- the apparatus 10 includes a vessel 20 having a predete nined volume, an "upstream” or first valve 22 controlling flow between the gas manifold and the vessel 20, a “downstream” or second valve 24 controlling flow from the vessel 20 to the vacuum pump 14, and a vessel pressure measurement device 26 communicating with the volume of the vessel 20.
- the apparatus 10 can also include a bypass valve 28.
- a controller 30 of the flow verification device 10 utilizes the rate-of-rise method of flow verification, which is illustrated in Fig. 3 by the graph of pressure (P) versus time (t).
- the controller 30 is a computer processor that includes electronic memory and a clock.
- the controller 30 is generally programmed so that, during operation, the controller first closes the bypass valve 28 and opens the first and the second valves 22, 24 so that flow is bypassed from the MFC 12 and through the vessel 20.
- the controller 30 is further programmed so that, after an initialization period to allow the bypassed flow to stabilize, the second valve 24 is closed to stop flow from the vessel 20.
- the controller 30 receives measurements of vessel pressure from the pressure measurement device 26, receives measurements of time from its clock, and determines a rate of change in vessel pressure due to the gas flow. The controller 30 then determines an actual flow provided by the MFC 12 using the rate of change in vessel pressure and the known volume of the vessel 20.
- the graph of Fig. 3 illustrates how the gas flow rate can be calculated by the controller 30 from the change in pressure over time ( ⁇ P/ ⁇ t) in the known volume of the vessel 20.
- the first valve 22, shown in Fig. 2 is closed and the second valve 24 is opened to purge the vessel 20 with the vacuum pump 14. After purging, the second valve 24 is closed and the bypass valve 28 is opened to allow normal flow between the MFC 12 and the process chamber 18.
- the flow verification device 10 can comprise, for example, a GBRORTM in-situ flow verifier or a Tru-FloTM in-situ flow verifier, both of which are provided by MKS struments of Andover, MA (http://www.mksinst.com).
- the GBRORTM is a modular gas path, or stick, and includes the valves, the pressure vessel, the pressure transducer and the controller mounted on a manifold.
- the GBRORTM and the Tru-FloTM flow verifiers are both process transparent, i.e., operate between the normal processing steps of the gas delivery system, and thus reduce processing tool down time.
- the pressure measurement device 26 can comprise, for example, a Baratron® brand pressure transducer, which is also available from MKS Instruments.
- the computer controllers (not shown) of the MFCs 12 and the computer controller 30 of the flow verification device 10 are comiected through a network physical layer 70 to a tool control 60.
- the network physical layer comprises a DeviceNetTM network physical layer 70.
- DeviceNetTM is a simple, networking solution that reduces the cost and time to wire and install industrial devices, while providing interchangeability of "like" components for multiple vendors.
- DeviceNetTM is an Open Network Standard, having an open specification and protocol. Vendors are not required to purchase hardware, software or licensing rights to connect devices to a system using DeviceNetTM.
- a DeviceNetTM specification can be obtained from the Open DeviceNetTM Vendor Association, Inc. (www.odva.org).
- the DeviceNetTM physical layer 70 allows the interchangeability of simple devices while making interconnectivity of more complex devices possible.
- the DeviceNetTM physical layer 70 is based on a broadcast-oriented, communications protocol; the Controller Area Network (CAN). In 1996, over 10 million CAN chips were produced. There are four main CAN chip suppliers; Intel, Motorola, Phillips and Hitachi. Two primary purposes of the DeviceNetTM physical layer 70 are: 1.) Transport of control-oriented information associated with low-level devices, and 2.) Transport of other information which is indirectly related to the system being controlled, such as configuration.
- the tool controller 60 In order to verify flow through one of the MFCs 56, the tool controller 60 individually controls the flow verification device 10 and a selected one of the MFCs 56 through the DeviceNetTM physical layer 70, so that a flow rate of the selected MFC 56 is verified.
- the new and improved system 100 of the present invention provides in-situ verification and calibration of the MFCs 56, so that the verification and calibration does not require removal of the MFCs 56 from the gas metering system 50.
- the system 100 includes a first network physical layer 104 connecting each of the MFCs 56 and the flow verification device 10 to a hub 104, which in turn can be connected to a connectivity tool 106.
- the computer controller 30 of the flow verification device 10 is newly programmed to automatically communicate with each of the MFCs 56 and verify and, if necessary, calibrate the flow of each of the MFCs 56 over the first network physical layer 104.
- all gas specific information along with a transfer function (to provide pressure insensitivity) is requested from the computer controller 30 of the flow verification device 10 from each of the MFCs 56 and processed to verify the accuracy of the flow rate of each of the MFCs 56 using the previously described ROR technique.
- This communication is done via the first network physical layer 104 between the flow verifier device 10 and the MFCs 56.
- the in-situ flow verification and calibration is initiated by a single command from the tool control controller 60 over the "second" physical layer 70.
- the second network physical layer comprises a DeviceNetTM network physical layer 70, although other protocols can be used.
- flow verify data will be collected and transmitted via the DeviceNetTM network physical layer 70 to the tool controller 60.
- the computer controller 30 of the flow verification device 10 will be programmed to receive a single command from the tool controller 70 and will query the MFC 56 under test, verify the flow and recalibrate the MFC, if necessary, and upload the calibration parameters into the MFC. This sequence can continue for all the MFCs 56 in the gas metering system 50 and as frequently as required. All the vital calibration data will be resident on the each of the MFCs 56.
- the first network physical layer comprises an EtherNet/IP network physical layer 104.
- EtherNet/Jj? is an industrial networking standard that takes advantage of commercial off-the-shelf Ethernet communication chips and physical media. IP stands for 'industrial protocol' and is what distinguishes this network. Unlike many options in the industrial Ethernet crowd, EtherNet/Jj? uses an open protocol at the application layer. Further, more than one vendor or organization backs EtherNet/IP, and EtherNet/IP is the only standard supported by three networking organizations: ControlNet International (CI), the Industrial Ethernet Association (TEA) and the Open DeviceNetTM Vendor Association (ODVA).
- CI ControlNet International
- TAA Industrial Ethernet Association
- ODVA Open DeviceNetTM Vendor Association
- EtherNet/LP is a protocol stack extending commercial off-the-shelf Ethernet with an open, industrially proven protocol for automation purposes. At the same time, it supports common office protocols such as HTTP, FTP and SNMP. Based on the TCP/IP suite, EtherNet/IP uses TCP for information messaging and UDP for I/O messaging. By using both TCP/IP and UDP/TP to encapsulate data, this is the first industrial Ethernet network to provide real-time I/O control.
- a companion network to DeviceNetTM, EtherNet/IP uses the same open, robust application-layer protocol - the Control and Infonnation Protocol (CIP) - as DeviceNetTM. Consequently, the networks also share device profiles and an object library. This allows EtherNet/IP developers to use the DeviceNetTM objects and profiles for plug-and-play interoperability among devices from multiple vendors. Combined, DeviceNetTM and EtherNet/IP promote transparency from sensors to the enterprise software.
- the hub is further connected to a ToolWebTM.
- ToolWebTM is a software "Connectivity" solution available from MKS Instruments that allows connection to all the programs on Process Tools via the Ethernet/IP network.
- BlueBoxTM is a hardware communications manager available from MKS Instruments that can support ToolWebTM for data collection and routing. Multiple tools could be connected to the ToolWebTM via the EtherNet/IP network physical layer 104 and could publish collected data over to a third party database connected through the hub to the EtherNet/IP network physical layer 104.
- ToolWebTM is a system containing hardware, such as the BlueBoxTM communications manager, and software to make the data monitoring and collection for the purpose of e-diagnostics possible.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Flow Control (AREA)
- Measuring Volume Flow (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020057024836A KR101076833B1 (en) | 2003-06-25 | 2004-05-24 | System and method for in-situ flow verification and calibration |
DE112004001142.6T DE112004001142B4 (en) | 2003-06-25 | 2004-05-24 | System and method for in-situ flow verification and calibration |
JP2006517136A JP4537393B2 (en) | 2003-06-25 | 2004-05-24 | In situ flow verification and calibration system and method |
GB0526353A GB2418260B (en) | 2003-06-25 | 2004-05-24 | System and method for in-situ flow verification and calibration |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/603,946 US6955072B2 (en) | 2003-06-25 | 2003-06-25 | System and method for in-situ flow verification and calibration |
US10/603,946 | 2003-06-25 |
Publications (2)
Publication Number | Publication Date |
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WO2005006390A2 true WO2005006390A2 (en) | 2005-01-20 |
WO2005006390A3 WO2005006390A3 (en) | 2005-07-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2004/016142 WO2005006390A2 (en) | 2003-06-25 | 2004-05-24 | System and method for in-situ flow verification and calibration |
Country Status (7)
Country | Link |
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US (1) | US6955072B2 (en) |
JP (1) | JP4537393B2 (en) |
KR (1) | KR101076833B1 (en) |
CN (1) | CN100394149C (en) |
DE (1) | DE112004001142B4 (en) |
GB (1) | GB2418260B (en) |
WO (1) | WO2005006390A2 (en) |
Cited By (2)
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---|---|---|---|---|
US20100229967A1 (en) * | 2009-03-11 | 2010-09-16 | Horiba Stec, Co., Ltd. | Mass flow controller verifying system, verifying method and verifying program |
US8707754B2 (en) * | 2010-04-30 | 2014-04-29 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7412986B2 (en) * | 2004-07-09 | 2008-08-19 | Celerity, Inc. | Method and system for flow measurement and validation of a mass flow controller |
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US10732021B2 (en) | 2016-05-17 | 2020-08-04 | Gojo Industries, Inc. | Method and apparatus for calibrating remaining doses in a refillable dispenser |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10697848B1 (en) * | 2016-12-12 | 2020-06-30 | Kirk A. Dobbs | Smart building water supply management system with leak detection and flood prevention |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US10031004B2 (en) * | 2016-12-15 | 2018-07-24 | Mks Instruments, Inc. | Methods and apparatus for wide range mass flow verification |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10663337B2 (en) | 2016-12-30 | 2020-05-26 | Ichor Systems, Inc. | Apparatus for controlling flow and method of calibrating same |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
JP6913498B2 (en) * | 2017-04-18 | 2021-08-04 | 東京エレクトロン株式会社 | Method of obtaining the output flow rate of the flow rate controller and method of processing the object to be processed |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102401446B1 (en) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
JP6851953B2 (en) * | 2017-10-30 | 2021-03-31 | アークレイ株式会社 | Pump drive method |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102628015B1 (en) | 2017-12-01 | 2024-01-23 | 삼성전자주식회사 | mass flow controller, manufacturing apparatus of semiconductor device and maintenance method of the same |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
TWI843623B (en) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
KR20190129718A (en) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
KR20210024462A (en) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and films and structures comprising metal-containing material |
CN112292477A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
TWI751420B (en) | 2018-06-29 | 2022-01-01 | 荷蘭商Asm知識產權私人控股有限公司 | Thin-film deposition method |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
CN110836839B (en) * | 2018-08-16 | 2022-02-22 | 成都瑞柯林工程技术有限公司 | Dust monitoring method and system and signal processing device |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
CN109085812A (en) * | 2018-08-28 | 2018-12-25 | 武汉华星光电技术有限公司 | Gas flow monitors system and monitoring and master-slave switching method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP7504584B2 (en) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method and system for forming device structures using selective deposition of gallium nitride - Patents.com |
TW202405220A (en) | 2019-01-17 | 2024-02-01 | 荷蘭商Asm Ip 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
JP7509548B2 (en) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | Cyclic deposition method and apparatus for filling recesses formed in a substrate surface - Patents.com |
KR102638425B1 (en) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for filling a recess formed within a substrate surface |
TWI838458B (en) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for plug fill deposition in 3-d nand applications |
TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
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KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
CN112563105B (en) * | 2019-09-10 | 2023-11-03 | 中微半导体设备(上海)股份有限公司 | System and method for implementing gas flow verification in plasma processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
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US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
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KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
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US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
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US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
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JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
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US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
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KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
TW202140831A (en) | 2020-04-24 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride–containing layer and structure comprising the same |
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KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
JP2021177545A (en) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing system for processing substrates |
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TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
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USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
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KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
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US11733081B2 (en) * | 2021-04-13 | 2023-08-22 | Applied Materials, Inc. | Methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system |
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CN113916329A (en) * | 2021-11-03 | 2022-01-11 | 国家石油天然气管网集团有限公司 | Natural gas flowmeter calibrating device and method based on neural network |
CN113984977B (en) * | 2021-12-27 | 2022-05-17 | 河北先河环保科技股份有限公司 | Industrial health monitoring station |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4328697A (en) * | 1979-05-23 | 1982-05-11 | Lucas Industries Limited | Transducer calibration device |
US4331262A (en) * | 1978-04-07 | 1982-05-25 | New Brunswick Scientific Co., Inc. | Calibratable automatic fluid dispenser |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU5970794A (en) * | 1993-01-25 | 1994-08-15 | Christian Kolling | Method and device for measuring the discharge in partly filled or completely filled ducts and in open channels |
US5479812A (en) * | 1994-07-15 | 1996-01-02 | Honeywell Inc. | On-site calibration device and method for nonlinearity correction for flow sensor/transmitter |
US5856929A (en) * | 1994-08-19 | 1999-01-05 | Spectrel Partners, L.L.C. | Integrated systems for testing and certifying the physical, functional, and electrical performance of IV pumps |
US5684245A (en) * | 1995-11-17 | 1997-11-04 | Mks Instruments, Inc. | Apparatus for mass flow measurement of a gas |
US5745390A (en) * | 1997-02-21 | 1998-04-28 | Regents Of The University Of Michigan | Method and system for reducing development time of complex systems utilizing correlation matrices |
US6119710A (en) * | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
US6343617B1 (en) * | 1999-07-09 | 2002-02-05 | Millipore Corporation | System and method of operation of a digital mass flow controller |
US6539968B1 (en) * | 2000-09-20 | 2003-04-01 | Fugasity Corporation | Fluid flow controller and method of operation |
US6892166B2 (en) * | 2001-03-09 | 2005-05-10 | Capton, Inc. | Method, apparatus, and system for monitoring amount of liquid poured from liquid containers |
US6671583B2 (en) * | 2001-03-30 | 2003-12-30 | Helix Technology Corporation | Vacuum system information network |
US6701261B2 (en) * | 2002-05-17 | 2004-03-02 | Ads Corporation | Method and system for analyzing the effect of inflow and infiltration on a sewer system |
US6712084B2 (en) * | 2002-06-24 | 2004-03-30 | Mks Instruments, Inc. | Apparatus and method for pressure fluctuation insensitive mass flow control |
US7114368B2 (en) * | 2003-04-08 | 2006-10-03 | Abbott Laboratories | Apparatus and method for verifying the volume of liquid dispensed by a liquid-dispensing mechanism |
-
2003
- 2003-06-25 US US10/603,946 patent/US6955072B2/en not_active Expired - Lifetime
-
2004
- 2004-05-24 WO PCT/US2004/016142 patent/WO2005006390A2/en active Application Filing
- 2004-05-24 CN CNB2004800215718A patent/CN100394149C/en not_active Expired - Fee Related
- 2004-05-24 DE DE112004001142.6T patent/DE112004001142B4/en not_active Expired - Fee Related
- 2004-05-24 JP JP2006517136A patent/JP4537393B2/en not_active Expired - Fee Related
- 2004-05-24 GB GB0526353A patent/GB2418260B/en not_active Expired - Fee Related
- 2004-05-24 KR KR1020057024836A patent/KR101076833B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4331262A (en) * | 1978-04-07 | 1982-05-25 | New Brunswick Scientific Co., Inc. | Calibratable automatic fluid dispenser |
US4328697A (en) * | 1979-05-23 | 1982-05-11 | Lucas Industries Limited | Transducer calibration device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100229967A1 (en) * | 2009-03-11 | 2010-09-16 | Horiba Stec, Co., Ltd. | Mass flow controller verifying system, verifying method and verifying program |
US8443649B2 (en) * | 2009-03-11 | 2013-05-21 | Horiba Stec, Co., Ltd. | Mass flow controller verifying system, verifying method and verifying program |
US8646307B2 (en) | 2009-03-11 | 2014-02-11 | Horiba Stec, Co., Ltd. | Mass flow controller verifying system, verifying method and verifying program |
US8707754B2 (en) * | 2010-04-30 | 2014-04-29 | Applied Materials, Inc. | Methods and apparatus for calibrating flow controllers in substrate processing systems |
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DE112004001142T5 (en) | 2006-05-18 |
WO2005006390A3 (en) | 2005-07-21 |
JP4537393B2 (en) | 2010-09-01 |
KR101076833B1 (en) | 2011-10-25 |
CN100394149C (en) | 2008-06-11 |
CN1829903A (en) | 2006-09-06 |
US6955072B2 (en) | 2005-10-18 |
KR20060026063A (en) | 2006-03-22 |
GB2418260A (en) | 2006-03-22 |
JP2007525736A (en) | 2007-09-06 |
DE112004001142B4 (en) | 2018-04-12 |
US20040261492A1 (en) | 2004-12-30 |
GB0526353D0 (en) | 2006-02-01 |
GB2418260B (en) | 2006-12-13 |
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