WO2005004185A3 - Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method - Google Patents

Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method Download PDF

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Publication number
WO2005004185A3
WO2005004185A3 PCT/US2004/018640 US2004018640W WO2005004185A3 WO 2005004185 A3 WO2005004185 A3 WO 2005004185A3 US 2004018640 W US2004018640 W US 2004018640W WO 2005004185 A3 WO2005004185 A3 WO 2005004185A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron
carbon nanotubes
substrate
emitting device
elements
Prior art date
Application number
PCT/US2004/018640
Other languages
French (fr)
Other versions
WO2005004185A2 (en
Inventor
Su Gu Kang
Woo Kyung Bae
Jung Jae Kim
Original Assignee
Cdream Display Corp
Su Gu Kang
Woo Kyung Bae
Jung Jae Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/600,226 external-priority patent/US7175494B1/en
Application filed by Cdream Display Corp, Su Gu Kang, Woo Kyung Bae, Jung Jae Kim filed Critical Cdream Display Corp
Publication of WO2005004185A2 publication Critical patent/WO2005004185A2/en
Publication of WO2005004185A3 publication Critical patent/WO2005004185A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electronemissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 300 °C to 500 °C compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface arda for growing the electronemissive elements at such low temperature ranges. To ensure growth uniformity of the carbon nanotubes, the granularized substrate is soaked in a pre-growth plasma gas to enhance the surface diffusion properties of the granularized substrate for carbon diffusion.
PCT/US2004/018640 2003-06-19 2004-06-09 Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method WO2005004185A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/600,226 2003-06-19
US10/600,226 US7175494B1 (en) 2002-08-22 2003-06-19 Forming carbon nanotubes at lower temperatures suitable for an electron-emitting device

Publications (2)

Publication Number Publication Date
WO2005004185A2 WO2005004185A2 (en) 2005-01-13
WO2005004185A3 true WO2005004185A3 (en) 2005-09-29

Family

ID=33564092

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/018640 WO2005004185A2 (en) 2003-06-19 2004-06-09 Forming carbon nanotubes at lower temperatures suitable for electron-emitting device, and associated fabrication method

Country Status (2)

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TW (1) TW200506998A (en)
WO (1) WO2005004185A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2250661B1 (en) * 2008-02-25 2020-04-08 Smoltek AB Deposition and selective removal of conducting helplayer for nanostructure processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
WO2001094260A1 (en) * 2000-06-02 2001-12-13 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
US6692717B1 (en) * 1999-09-17 2004-02-17 William Marsh Rice University Catalytic growth of single-wall carbon nanotubes from metal particles

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331209B1 (en) * 1999-04-21 2001-12-18 Jin Jang Method of forming carbon nanotubes
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6692717B1 (en) * 1999-09-17 2004-02-17 William Marsh Rice University Catalytic growth of single-wall carbon nanotubes from metal particles
WO2001094260A1 (en) * 2000-06-02 2001-12-13 The Board Of Regents Of The University Of Oklahoma Method and apparatus for producing carbon nanotubes

Also Published As

Publication number Publication date
TW200506998A (en) 2005-02-16
WO2005004185A2 (en) 2005-01-13

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