WO2004099296A1 - Nanoporous materials suitable for use in semiconductors - Google Patents
Nanoporous materials suitable for use in semiconductors Download PDFInfo
- Publication number
- WO2004099296A1 WO2004099296A1 PCT/NL2004/000242 NL2004000242W WO2004099296A1 WO 2004099296 A1 WO2004099296 A1 WO 2004099296A1 NL 2004000242 W NL2004000242 W NL 2004000242W WO 2004099296 A1 WO2004099296 A1 WO 2004099296A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- porogen
- network system
- network
- resin
- composition according
- Prior art date
Links
- 239000007783 nanoporous material Substances 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000003361 porogen Substances 0.000 claims abstract description 89
- 239000000203 mixture Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 239000003054 catalyst Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 9
- 239000012442 inert solvent Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 22
- 125000000524 functional group Chemical group 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000009477 glass transition Effects 0.000 claims description 3
- 238000005191 phase separation Methods 0.000 abstract description 9
- 239000008199 coating composition Substances 0.000 abstract 1
- -1 for example Polymers 0.000 description 16
- 238000000576 coating method Methods 0.000 description 10
- 239000000412 dendrimer Substances 0.000 description 10
- 229920000736 dendritic polymer Polymers 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 239000012948 isocyanate Substances 0.000 description 9
- 150000002513 isocyanates Chemical class 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 229920006149 polyester-amide block copolymer Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000004377 microelectronic Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000001298 alcohols Chemical class 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 208000032366 Oversensing Diseases 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229940117389 dichlorobenzene Drugs 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 229920000412 polyarylene Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- CWRORZJYSUFYHO-UHFFFAOYSA-N (3z)-3-diazobicyclo[2.2.2]octane Chemical compound C1CC2C(=[N+]=[N-])CC1CC2 CWRORZJYSUFYHO-UHFFFAOYSA-N 0.000 description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical class COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JJLKTTCRRLHVGL-UHFFFAOYSA-L [acetyloxy(dibutyl)stannyl] acetate Chemical compound CC([O-])=O.CC([O-])=O.CCCC[Sn+2]CCCC JJLKTTCRRLHVGL-UHFFFAOYSA-L 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000001588 bifunctional effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 2
- 229920000747 poly(lactic acid) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 150000003254 radicals Chemical group 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 238000012607 small angle X-ray scattering experiment Methods 0.000 description 2
- 238000000235 small-angle X-ray scattering Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical class COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical class NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 125000000041 C6-C10 aryl group Chemical group 0.000 description 1
- 238000005698 Diels-Alder reaction Methods 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical class CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical class C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical class CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 238000004279 X-ray Guinier Methods 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical class CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- QYMFNZIUDRQRSA-UHFFFAOYSA-N dimethyl butanedioate;dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC QYMFNZIUDRQRSA-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000007336 electrophilic substitution reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229920000587 hyperbranched polymer Polymers 0.000 description 1
- 150000002463 imidates Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 1
- 150000002561 ketenes Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052605 nesosilicate Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010534 nucleophilic substitution reaction Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000004762 orthosilicates Chemical class 0.000 description 1
- 150000002918 oxazolines Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Chemical class CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920003251 poly(α-methylstyrene) Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- 238000007347 radical substitution reaction Methods 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000001464 small-angle X-ray scattering data Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/06—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances
- C04B38/0615—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof by burning-out added substances by burning natural expanding materials or by sublimating or melting out added substances the burned-out substance being a monolitic element having approximately the same dimensions as the final article, e.g. a porous polyurethane sheet or a prepreg obtained by bonding together resin particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00482—Coating or impregnation materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00612—Uses not provided for elsewhere in C04B2111/00 as one or more layers of a layered structure
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2201/00—Mortars, concrete or artificial stone characterised by specific physical values
- C04B2201/30—Mortars, concrete or artificial stone characterised by specific physical values for heat transfer properties such as thermal insulation values, e.g. R-values
- C04B2201/32—Mortars, concrete or artificial stone characterised by specific physical values for heat transfer properties such as thermal insulation values, e.g. R-values for the thermal conductivity, e.g. K-factors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Definitions
- the present invention relates to nanoporous materials, which can for example be used as matrix for interlayer dielectrics, for example in semiconductors.
- the nanoporous materials according to the present invention can have a low dielectric constant (k), for example even lower than 2.
- the invention also relates to a composition on which the nanoporous materials according the invention can be based, a method of making the nanoporous materials according to the invention, and the products in which the nanoporous materials according to the invention can be used.
- Macroscopic phase separation is here and hereafter defined as a stage in which two different phases are present, of which the porogen phase comprises structures larger than the wavelength of visible light, i.e. higher than approximately 400 nm.
- the macroscopic phase separation large pores or even interconnected structures are formed, decreasing the mechanical properties of the interlayer once the porogen is burned out.
- the composition according to the invention comprises a porogen network system (a) capable of forming a network.
- the porogen network system comprises at least a functionalised porogen (i).
- the functionalised porogen is capable of forming a network either by itself or with another compound (ii).
- the presence of at least one other compound (ii) having functional groups capable of reacting with functional groups present on the porogen is required to make the porogen network system capable of forming a network.
- Suitable porogens (i) for the composition according to the invention are either organic or inorganic compounds.
- inorganic porogens are compounds which are labile at higher temperatures.
- the used porogens are organic compounds. These organic compounds have to be decomposable, due to the fact that they have to be burned out the matrix structure during the production of the porous dielectric material.
- Suitable organic porogens are for example linear, branched and crosslinked polymers and copolymers, but also crosslinked polymeric nanoparticles with reactive surface functionality.
- the porogen may be a polymer comprised of aliphatic polycarbonates, polyester, polysulfones, polylactides, polylactones.
- the porogen may be a polymer comprised of monomer units as for example styrene, halogenated styrene, hydroxy-substituted styrene, lower alkyl- substituted styrene, acrylic acid, acrylamide, methacrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, ethylene oxide, propylene oxide, and combinations of any of them.
- the porogen may be a homopolymer or a copolymer, for example based on the foregoing monomer units.
- suitable polymers include but are not limited to poly(methylmethacrylate), polystyrene, poly( ⁇ -methylstyrene) aliphatic polycarbonates, polyesters, polyesteramides, polysulfones, polylactides or polylactones.
- Branched polymers are suitable for the porogen, for example dendrimers, hyperbranched polymers, star shaped polymers.
- dendrimers, polyesteramides or star shaped poly ( ⁇ -caprolactone) are used.
- dendrimers to be used as porogen (i) in the present invention are for example described in WO93/14147 and WO95/02008 which dendrimers are incorporated by reference herein.
- dendrimers used as porogens preferably at least generation 3 dendrimers are used. More preferably generation 3 or 4 dendrimers are used.
- polyesteramides to be used as porogen (i) in the present invention are for example described in WO 99/16810, which describes linear or branched condensation polymers containing ester groups and at least one amide group in the backbone, having at least one hydroxy alkyl amide endgroup or modified hydroxyl amide endgroup, and having a weight average molecular mass of > 800 g/mol.
- the polyesteramides described in WO 99/16810 are hereby incorporated by reference.
- a preferred polyesteramide is a branched polyesteramide having at least two groups according to formula II:
- Y C— C— O— H , H, (C C 24 )(cyclo)alkyl or (C ⁇ -C 10 ) aryl, R 5 ,
- R B (C 2 -C 24 ), optionally substituted, aryl or (cyclo)alkyl aliphatic diradical, and R 1 , R 2 , R 3 , R 4 , R 5 and R 6 may, independently of one another, be the same or different, H, (C 6 -C 10 ) aryl or (C C 8 )(cyclo)alkyl radical. Also mixtures of porogens may be used.
- the porogen has to be capable of forming a network either by itself or with another compound. Therefore the porogen has to be equipped with functional groups.
- the amount of functional groups is not limiting to the composition according to the invention, however, In all cases the average functionality of the porogen network system must be higher than 2.
- the porogen should have a functionality of at least 2 per molecule.
- Introduction of functional groups to the porogen can be carried out using conventional methods, known to those skilled in the art.
- possible functional groups are for example oxazolines, nitriles, acryaltes, epoxy's, vinyl ethers.
- porogen In a system where the porogen is not capable of reacting with itself, possible functional groups are hydroxy or amine groups, preferably hydroxy groups. In one embodiment of the invention, wherein the porogen is not capable of reacting with itself, the porogen has at least 2 functional groups per molecule.
- compound (ii) is required to make the porogen network system of the present invention capable of forming a network.
- Such compound (ii) has to be capable of reacting with the functional groups of the porogen.
- suitable compounds (ii) are isocyanates, ketenes, cyano compounds, imino ethers, cardobiimides, aldehydes, ketons or the like.
- compound (ii) is a porogen containing another functionality than the other porogen.
- compound (ii) is an isocyanate.
- suitable isocyanates are trifunctional isocyanates or bifunctional isocyanates.
- trifunctional isocyanates are used.
- a preferred embodiments of the invention is a composition comprising a bifunctional porogen (i) and a trifunctional compound (ii)
- the amount of compound (ii) used may be determined by the person skilled in the art.
- the ratio between the amount of functional groups of the porogen (i) and the amount of functional groups of the compound (ii) is at least 0.1 , more preferably at least 0,5, still more preferably at least 1.2 and most preferably about 1.
- the ratio between the amount of functional groups of the porogen (i) and the amount of compatible functional groups of the compound (ii) is at most 10, more preferably at most 5 and still more preferably at most 1.2.
- the functional groups of the porogen (i) and the functional groups of compound (ii) are present in stoichiometric amounts.
- the network reaction of the functional groups of the porogen network system may involve all types of reactions, either forming physical networks or chemical networks. Examples of possible reactions resulting in physical networks are hydrogen- bridges, VanderWaals bonding, ionic bonding or coordination bonding. Examples of reactions resulting in chemical networks are nucleophilic substitution, electrophilic substitution, free radical substitution, Diels Alder reaction.
- the functional groups forming a network in the porogen network system are capable of reacting fast with each other, so that phase separation due to evaporation of solvent or due to the curing reaction of the resin does not take place any more, as the porogen is part of the nettechnik already. It is believed that network formation of the porogen network system during the spin coating itself is most effective for preventing the macroscopic phase separation.
- Examples of fast combinations of functional groups are the combination of alcohols and isocyanates, or amines and isocayanates, free radical polymerisation of acrylates.
- the functional groups in the porogen network system are combinations of alcohols and isocyanates.
- any resin (b) can be used in the composition according to the invention as long as it is not susceptible to thermal degradation at the same temperature the porogen network will degrade.
- the resin should have, after curing, a glass transition temperature of at least about 400°C, more preferably at least about 440 °C, most preferably about 500 °C. Also mixtures of resins may be used.
- the molecular weight (Mw) of the resin (b) is larger than 750. However, also high molecular weight resins are also suitable.
- the molecular weight (Mw) of the resin (b) is preferably lower than 100,000.
- the resin is not capable of reacting with the porogen itself. More preferably the resin is not capable of reacting with any components of the porogen network system. This has the advantage that the efficiency of the porogen network system is not influenced by any side reactions.
- suitable resins are silicon-containing polymers, such as organosilicates, polyarylenes, polyimides and polybenzocyclobutene (eg. Sumitomo Bakelite).
- suitable organosilicates are silsesquioxanes, alkoxy silanes, organic silicates, orthosilicates and organically modified silicates.
- Suitable silsesquioxanes are for example, hydrogen silsesquioxanes, alkyl silsesquioxanes, preferably lower alkyl silsesquioxanes, aryl or alkyl/aryl silsequioxanes, such as phenyl silsesquioxanes, and copolymers of silsesquioxanes with for example polyimides.
- suitable polyarylenes are polyphenylenes, poly(phenylquinoxalines) and poly(arylene ethers).
- An example of a commercially available polyarylene is SiLKTM (Dow Chem Inc.).
- organosilicates are used.
- suitable commercially available organosilicates are Zirkon Lk (Shiply), HOSP (Honeywell), Fox (Dow Corning), MezoELK (Chemicals affiliate Schumacher), polysilazane (AZ Electronics/Clariant), and polymethylphenylsiloxane resin, such as GR150F (Techneglas).
- HSQ hydrogen sisesquioxane
- MSQ methyl silsesquioxane
- the amount of porogen network system (a) with respect to the amount of resin (b) determines the amount of pores in the matrix material to be produced. The more pores in the matrix material, the lower the dielectric constant (k).
- the composition according to the invention makes it possible that even an amount of 80 wt% porogen can be reached, without any sign of macroscopic phase separation.
- the composition according to the invention comprises at least an amount of 0.1 wt% porogen, more preferably at least an amount of 1 wt% porogen and most preferably an amount of 5 wt% porogen.
- the amount of porogen network system (a) is at most 80 wt% with respect to the total weight of the porogen network system (a) and the resin (b).
- the amount of porogen network system (a) is at most 70 wt %, more preferably at most 60 wt % and even more preferably at most 50 wt%.
- the composition according to the invention also comprises a catalyst (c) in order to speed up the network formation of the porogen network system.
- a catalyst c
- suitable catalysts depend on the porogen network system used. The person skilled in the art can determine which catalyst is suitable for the porogen network system used. Also mixtures of catalysts may be used.
- Suitable catalysts for the composition according to the present invention are the present invention are acids and bases.
- suitable acid catalyst are Sb 2 O 3 , As 2 O 3 , dibutyltinlaurate LiX, BX 3 , MgX 2 , AIX 3 , BiX 3 , SnX 4 , SbX 5 , FeX 3 , GeX 4 , GaX 3 , HgX 2 , ZnX 2 , AIX 3 , TiX 4 , MnX 2 , ZrX 4 , R 4 NX, R 4 PX, or HX where X is H, R, I, Br, Cl, F, acetylacetonate (acas), OR, O(O)CR or combinations of these and R is alkyl or aryl.
- DABCO diazobicyclo[2,2,2]octane
- DMAP dimethylaminopyridine
- tin-based catalysts are preferred, for example dibutyltin acetate.
- the amount of catalyst (c) used may be determined by the person skilled in the art. Generally the amount of catalyst is at least 0.01 wt % with respect to the porogen network system. Preferably the amount of catalyst is at least 0.1 wt%, more preferably at least 1 wt% and even more preferably at least 10 wt%. Generally the amount of catalyst is at most 100% with respect to the porogen network system.
- the composition according to the invention may comprise an inert solvent (d).
- the solvent should be inert as to not react with any of the other components of the composition. The components of the composition should however dissolve in the solvent. The person skilled in the art can easily determine which type of solvent is most suitable for the specific components as used in the composition of the present invention. Suitable solvents include but are not limited to ketones, esters, ethers, alcohols, and/or hydrocarbons. Also mixtures of different solvents can be used.
- the amount of solvent used for spin coating preferably may range between 50 and 98% (based on the total weight of the composition according to the invention).
- the solvent is chosen from the group including hydrocarbons, especially aromatic hydrocarbons; ethers, especially glycoethers and other equivalent ethers; and various esters, well-known to the person skilled in the art.
- suitable solvents are for example aromatic hydrocarbon compounds (for example the 'Solvesso' types), N-methylpyrolidone, xylene, dichlorobenzene, propylene glycol monomethylether, methylpropylene glycol acetate, butyl acetate, dibasic ester, isophoron, ethyl ethoxypropionate, ethylene-propylene glycol acetate and/or butyl glycol.
- aromatic hydrocarbon compounds for example the 'Solvesso' types
- N-methylpyrolidone for example the 'Solvesso' types
- xylene for example the 'Solvesso' types
- dichlorobenzene propylene glycol monomethylether
- methylpropylene glycol acetate butyl acetate
- dibasic ester dibasic ester
- isophoron ethyl ethoxypropionate
- ethylene-propylene glycol acetate and/or butyl glycol
- the present invention also relates to the use of a porogen network system (a) comprising at least a functionalised porogen for in the production of a porous material.
- the porogen network system is used during a spin coating process, or a similarly fast coating process, for example spray coating.
- Preferences for the porogen network system are as described above.
- the porogen network system (a) is used in combination with a catalyst (c).
- Preferences for the catalyst (c) are as described above.
- the composition according to the invention is suitable for use in a method for making porous material using a fast coating process. Examples of suitable fast coating processes are spin coating or spray coating.
- the coating of the substrate need not be performed at higher temperatures. Preferably, the coating takes place without additional heating, i.e. at room temperature.
- An example of a suitable method to produce porous material comprises the steps of:
- Td is higher than Tc, but less than Tg.
- the porogen network system (a), the resin (b), the catalyst (c) and the inert solvent (d) being the same as already specified above, including the same preferences as to chemical consistence and amounts.
- the completion of porogen network formation takes place after the application of the composition to the substrate, so that the composition can flow to form the coating.
- the coating process preferably takes place at room temperature, thus the network formation preferably can take place at room temperature.
- room temperature depends on the circumstances. It is here and hereafter defined as approximately 20 °C +/- 5 °C.
- the nanoporous material can be used for several applications, for example in micro-electronics or anti-reflective coatings.
- the pore size of the nanoporous material in micro-electronic applications is about 10% of the size of the individual metallic circuit lines or less.
- the averabe pore size preferably is about 13 nm or less.
- Pore sizes depend on the type of porogen used.
- the average pore sizes of can be for example at least about 5 nm.
- the pore size may be heterogeneously or homogeneously distributed.
- the pore size is more homogeneously distributed, since this may be of benefit to the material properties of the nanoporous material, as well as the dielectric constant.
- Nanoporous material prepared according to the invention can reach a dielectic constant of lower than 3, preferably lower than 2,5, and even more preferably lower than 2.
- the substrate is generally an inert substrate, for example glass, silicon or ceramic.
- Suitable inert substrates also include epoxy composites, polyimides, phenolic polymers, high temperature polymers, and the like.
- the substrate can optionally have integrated circuits disposed therein.
- the substrate may be provided with electrical conductor means such as input/output pins (I/O pins) for electrically connecting the packaging device to the circuit board.
- I/O pins input/output pins
- a plurality of electrically insulating and electrically conducting layers may be alternatively stacked up on the substrate. The layers are then generally formed on the substrate in a layer-by-layer process wherein each layer is formed in a separate process step.
- a metallic film may be deposited on the substrate, where after the metallic film is lithographically patterned to provide a pattern of individual metallic circuit lines on the substrate followed by the method of making a layer of a nanoporous material on the substrate as described above.
- nanoporous material made from the composition according to the invention can be used in a semiconductor.
- a semiconductor may comprise a layer of the nanoporous material according to the invention.
- Triisocyanate (DesmodurTM RFE, Bayer) was re-crystallised from dichloromethane to give white crystals having an isocyanate functionality of 3.
- Samples were cured in an oven under nitrogen for 2 hours at 200°C and 2 hours at 530°C respectively, yielding coated substrates having a spin-coated film with a layer thickness below 2 ⁇ m.
- a comparative example was prepared in the same manner as indicated above with the difference that no Desmodur RFE was added to the formulation.
- Photograph 1 shows the light microscopy image of the spin coated film of Example I.
- Photograph 2 shows the light microscopy image of the spin coated film of the comparative example.
- Comparative Experiment A appeared white milky indicative of macroscopic phase separation. This is also reflected in the light microscopy image of Comparative Experiment A showing a clear two-phase structure. In fact, investigations at lower loadings have indicated that the macroscopic phase separation already occurs above 10 wt% dendrimer in formulations without Desmodur RFE. In contrast, samples containing Desmodur RFE all appeared transparent even at a dendrimer loading of 70 wt%. This is also evident from the microscopy image of Example I, which shows no structure at least on microscopic scale.
- SAXS Small angle X-ray scattering
- the Kratky setup is equipped with an entrance slit of 40 ⁇ m and features a sample-to-detector distance of 288mm.
- the scattering patterns from the samples and the background scattering were recorded with a position sensitive detector (MBRAUN 50M) for about 2-3 days.
- MBRAUN 50M position sensitive detector
- the signal recorded from a PE reference sample was used for intensity calibration, whereas sample transmissions were derived from its attenuation.
- q 2 ⁇ s - (4 ⁇ / ⁇ )*sm ' 3 , the position of the (attenuated) primary beam was recorded without beamstop.
- SAXS data processing including subtraction of the transmission- weighted background signal were performed with subroutines of the FFSAXS software, developed by Vonk.
- the overall background signal including parasitic scattering from the SAXS camera and contributions from the glass substrate was subtracted from the scattering pattern in order to minimize statistical errors at high s.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46757303P | 2003-05-05 | 2003-05-05 | |
EP03101241 | 2003-05-05 | ||
US60/467573 | 2003-05-05 | ||
EP03101241.2 | 2003-05-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004099296A1 true WO2004099296A1 (en) | 2004-11-18 |
Family
ID=33436123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/NL2004/000242 WO2004099296A1 (en) | 2003-05-05 | 2004-04-09 | Nanoporous materials suitable for use in semiconductors |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2004099296A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008049577A1 (en) * | 2006-10-25 | 2008-05-02 | Dsm Ip Assets B.V. | Organic opto-electronic devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6391932B1 (en) * | 2000-08-08 | 2002-05-21 | Shipley Company, L.L.C. | Porous materials |
US6495479B1 (en) * | 2000-05-05 | 2002-12-17 | Honeywell International, Inc. | Simplified method to produce nanoporous silicon-based films |
US20030012942A1 (en) * | 2001-05-03 | 2003-01-16 | The Board Of Regents Of The University Of Nebraska | Sol-gel preparation of porous solids using dendrimers |
-
2004
- 2004-04-09 WO PCT/NL2004/000242 patent/WO2004099296A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6495479B1 (en) * | 2000-05-05 | 2002-12-17 | Honeywell International, Inc. | Simplified method to produce nanoporous silicon-based films |
US6391932B1 (en) * | 2000-08-08 | 2002-05-21 | Shipley Company, L.L.C. | Porous materials |
US20030012942A1 (en) * | 2001-05-03 | 2003-01-16 | The Board Of Regents Of The University Of Nebraska | Sol-gel preparation of porous solids using dendrimers |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008049577A1 (en) * | 2006-10-25 | 2008-05-02 | Dsm Ip Assets B.V. | Organic opto-electronic devices |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1141128B1 (en) | A composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom | |
US6646081B2 (en) | Polyarylene compositions with enhanced modulus profiles | |
US7087982B2 (en) | Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials | |
US7141188B2 (en) | Organic compositions | |
US20040084774A1 (en) | Gas layer formation materials | |
US20030168251A1 (en) | Preparation of crosslinked particles from polymers having activatible crosslinking groups | |
EP1245628A1 (en) | Composition for preparing substances having nano-pores | |
EP1169491B1 (en) | Low dielectric nano-porous material obtainable from polymer decomposition | |
WO2000041230A2 (en) | Electron beam treatment of siloxane resins | |
US20050255710A1 (en) | Porous materials | |
US20030017635A1 (en) | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes | |
US6812551B2 (en) | Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens | |
US4663414A (en) | Phospho-boro-silanol interlayer dielectric films and preparation | |
US20050090570A1 (en) | Composition for forming dielectric film and method for forming dielectric film or pattern using the composition | |
US20050113472A1 (en) | Porous materials | |
EP1416501A2 (en) | Composition for preparing porous dielectric thin film containing saccharides porogen | |
US6632748B2 (en) | Composition for preparing substances having nano-pores | |
US7060204B2 (en) | Organic compositions | |
US20080287573A1 (en) | Ultra-Low Dielectrics Film for Copper Interconnect | |
WO2004099296A1 (en) | Nanoporous materials suitable for use in semiconductors | |
Hedrick et al. | Templating nanoporosity in organosilicates using well-defined branched macromolecules | |
US20060094850A1 (en) | Composition for preparing nanoporous material comprising calixarene derivative | |
KR20010094928A (en) | Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom | |
JP2005536026A (en) | Nanoporous material and method for forming the same | |
Eigner et al. | Labile hyperbranched poly (triazene ester) s–decomposition behavior and their use as porogens in thermally stable matrix polymers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase |