WO2004082823A1 - 微小流路構造体 - Google Patents
微小流路構造体 Download PDFInfo
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- WO2004082823A1 WO2004082823A1 PCT/JP2004/003683 JP2004003683W WO2004082823A1 WO 2004082823 A1 WO2004082823 A1 WO 2004082823A1 JP 2004003683 W JP2004003683 W JP 2004003683W WO 2004082823 A1 WO2004082823 A1 WO 2004082823A1
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- WIPO (PCT)
- Prior art keywords
- microchannel
- gas
- inlet
- microchannel structure
- metal
- Prior art date
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- 238000004891 communication Methods 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- 150000002739 metals Chemical class 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 115
- 239000000758 substrate Substances 0.000 description 42
- 239000000463 material Substances 0.000 description 16
- 239000010453 quartz Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 238000002156 mixing Methods 0.000 description 11
- 230000003213 activating effect Effects 0.000 description 10
- 230000004913 activation Effects 0.000 description 8
- 238000001994 activation Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005674 electromagnetic induction Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001272720 Medialuna californiensis Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 and among them Chemical compound 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 239000013076 target substance Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/0093—Microreactors, e.g. miniaturised or microfabricated reactors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00783—Laminate assemblies, i.e. the reactor comprising a stack of plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00819—Materials of construction
- B01J2219/00835—Comprising catalytically active material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00851—Additional features
- B01J2219/00853—Employing electrode arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00873—Heat exchange
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00891—Feeding or evacuation
Definitions
- the present invention relates to a microchannel structure and a gas processing apparatus using the microchannel structure.
- microchannel structure with a microchannel with a length of about several cm and a width and depth of sub- ⁇ m to several hundred / m on a glass substrate of several cm square
- Such microchannels can perform efficient chemical reactions due to the effects of short intermolecular distances in the microspace and large specific interfacial areas (for example, H. Hisamoto et. Al. “Fast and high conversion”). phase-transfer synthesis exploiting the liquid-liquid interface face in a microchannel chip ", Chem. Commun., 2001, 2662-2663)).
- the degree of integration of the microchannel which is the minimum unit, can be increased two-dimensionally or three-dimensionally. It is said that it is possible by layering. However, it has conventionally been very difficult to evenly distribute a fluid to microchannels arranged two-dimensionally or three-dimensionally.
- a thin film of a material different from the above-mentioned underlayer material is applied to an underlayer material such as Si, which is a typical semiconductor substrate material, for example, by a chemical vapor deposition (CVD) method.
- CVD chemical vapor deposition
- the gas N 2 0 and NH 3 is activated by plasma or heated metal catalyst, by doping the semiconductor base materials, for example, forming a thin film such as S i N (See, for example, Japanese Patent Application Laid-Open No. 10-83988).
- the method using plasma requires a high voltage of several tens of KV or more, which requires a large-scale device, and the high-energy charged particles generated in the plasma can be used for semiconductor substrate materials. Inevitably, the generation of interface defects due to the incidence of light is inevitable.
- the method using a heated metal catalyst requires heating to a high temperature. For example, activation of NH 3 requires heating to 160 ° C. or higher.
- a glass tube or glass boat made by Ishii is used for a semiconductor film forming apparatus.
- the softening point which is the temperature at which quartz starts to expand at lmm per minute, is about 160 ° C to 170 ° C, quartz containers cannot be used. Therefore, there is a problem that a special ceramic container having better heat resistance is required.
- An object of the present invention has been proposed in view of the force and the conventional state of the art, and to evenly distribute a fluid to a plurality of micro flow channels arranged in a plane or three-dimensionally in a micro flow channel structure. Is to make it possible.
- Another object of the present invention is to provide a gas processing apparatus that can use such a micro channel structure to efficiently process, activate, decompose, mix, and react a gas as compared with the related art.
- the processing in the gas processing apparatus means processing such as activation and decomposition of a fluid, mixing of a plurality of gases, and reaction. Disclosure of the invention
- the present invention provides at least one inlet for introducing a gas, at least one inlet for communicating with the inlet, and at least one micro flow communicating with the inlet for uniformly distributing the gas. And communicating with the microchannel and discharging the gas
- An inner diameter of the introduction path is larger than an inner diameter of the minute flow path, and an inner diameter of the introduction path is smaller than the inner diameter of the introduction port.
- a microchannel structure which is one of the following: one that gradually increases as the distance from the communication position increases, and that is the same even when the distance from the communication position increases.
- FIG. 1 is a schematic plan view showing the most basic microchannel shape in the present invention.
- FIG. 2 is a schematic plan view showing an example of the shape of the microchannel in the present invention.
- FIG. 3 is a schematic plan view showing an example of the shape of the microchannel in the present invention.
- FIG. 4A is a schematic diagram showing an example of the shape of the microchannel in the present invention.
- FIG. 4B is a schematic plan view in which a part of FIG. 4A is enlarged.
- FIG. 5 is a schematic perspective view showing an assembling step of an embodiment of a microchannel shape according to the present invention used in Example 3.
- FIG. 6 is a schematic perspective view of a quartz conduit generally used for activating or decomposing a gas.
- FIG. 7A is a schematic perspective view when one or more metals are arranged in all or a part of the microchannel.
- FIG. 7B is a schematic perspective view when one or more metals are arranged in all or a part of the microchannel.
- FIG. 7C is a schematic sectional view taken along line AA ′ of FIG. 7B.
- FIG. 7D is a schematic perspective view when one or more metals are arranged in all or a part of the microchannel.
- FIG. 7E is a schematic sectional view taken along line BB ′ of FIG. 7D.
- FIG. 8 is a schematic perspective view of the microchannel structure used in Example 1.
- FIG. 9A is a schematic perspective view of the microchannel structure used in Example 2.
- FIG. 9B is a schematic plan view in which a part of FIG. 9A is enlarged.
- FIG. 10 is a schematic diagram showing an example in which the microchannel structure used in Example 2 is applied to a CVD apparatus.
- FIG. 11 is a schematic cross-sectional view of the microchannel of the microchannel structure used in Example 3 taken along line C-C ′ in FIG. 5.
- FIG. 12 is a schematic diagram showing an example in which the microchannel structure used in Example 3 is applied to a CVD device.
- the present invention provides a microchannel structure having a plurality of microchannels for performing gas processing such as a chemical reaction, the microchannel having a microchannel shape for uniformly distributing gas to the plurality of microchannels.
- the present invention relates to a structure, and a gas processing apparatus using the microchannel structure for performing a chemical reaction in a gas microchannel, particularly, activation, decomposition, mixing, and reaction of a gas.
- the inside diameter of the introduction path is larger than the inside diameter of the microchannel and gradually increases or does not change as the distance from the communicating position with the introduction port increases. This has made it possible to distribute gas evenly to a plurality of microchannels arranged two-dimensionally or three-dimensionally in a microchannel structure, and to mix two or more gases.
- a catalyst or a metal may be arranged in all or at least a part of the minute flow path.
- the catalyst may be a metal or a compound containing a metal.
- the introduced gas can be activated, decomposed, or reacted by using the metal as a catalyst and Z or a heater, or by using the metal as an electrode and discharging between the metals.
- the microchannel structure of the present invention comprises: an inlet for introducing a gas and an introduction channel communicating with the gas; a microchannel communicating with the introduction channel and uniformly distributing and sending the gas; A discharge path communicating with the microchannel and discharging the gas, and a discharge path connected to the discharge path; And an outlet through which it passes.
- the inside diameter of the introduction path is larger than the inside diameter of the microchannel, and gradually increases or becomes the same as the distance from the communication position with the introduction port increases.
- the size may be increased in multiple stages or may be increased in a conical shape, and an appropriate shape can be appropriately selected depending on conditions.
- FIG. 1 shows the most basic conceptual diagram of the microchannel structure of the present invention.
- An introduction port (1) for introducing gas is provided at one end of the introduction path (3), and a minute flow path (4) having an inner diameter (flow path width) smaller than that of the introduction path is arranged.
- An outlet (2) is provided at the end of the microchannel (4).
- the microchannel means a channel having an inner diameter of about 500 xm or less.
- the introduction path means a flow path having an inner diameter of more than 500 tm and not more than several cm, preferably not more than 1 cm.
- the inner diameter is defined as the inner diameter of a cylinder having the same cross-sectional area if the cross-section is not circular.
- the cross-sectional shape of the flow path can be any shape, but is particularly preferably a half-moon shape or a rectangular shape.
- the inner diameter of the flow path connecting the inlet and the introduction path is no particular limitation on the inner diameter of the flow path connecting the inlet and the introduction path, but it is desirable that the inside diameter be approximately the same as the introduction path.
- microchannel there is no particular limitation on the arrangement of the microchannel as long as it communicates with the introduction path at a position different from the introduction port. This point will be further specifically described with reference to FIG. Figure 1 is closest to the introduction!
- X indicates the communication position between the introduction port and the introduction path.
- the communication position between the microchannel and the introduction path is represented by X x (in the figure, As shown in the figure, the point where the center line of the micro flow path intersects with the position corresponding to the introduction path wall is expressed as:), Communication position X.
- the length along the introduction path between and the communication position x was defined as a.
- the communication position, the micro flow path, and the length between the micro flow paths are ordered, and the micro flow path furthest from the introduction port.
- Communicating position X n the fine channel Y n microchannels one inlet toward a more Y n have the communicating position X n have the communication position and the communication position X between the fine channel and the introduction passage of the inlet passage and the length along the introduction path between the n and the a n.
- the all equal arranged a n from a 2. Furthermore, it is possible to further improve this effect by properly like the ai ⁇ a n Te to base.
- the present invention may be an arrangement of a 2 other than the arrangement a n are all equal, the condition of the material and manufacturing, etc., used at that time, properly selecting the length of the communication position and the communication position adjacent , Or can be changed. For example, a configuration in which the length is gradually increased from a ⁇ to an n or sequentially reduced.
- the microchannel structure may be composed of one or more microchannel substrates having a microchannel. Further, the substrate may have a plurality of introduction paths, and each of the introduction paths may be configured to communicate with the microchannel substrate, and thus with the microchannel.
- FIGS. 2 to 5 are conceptual diagrams showing some embodiments of the present invention. As described above, the present invention is not limited to only these embodiments, and it goes without saying that the present invention can be arbitrarily changed without departing from the spirit of the invention.
- Fig. 2 shows an example in which the inside diameter of the introduction path (3) increases as the distance from the communication position of the introduction port (1) increases.
- the rate of change of the introduction path where the cross-sectional area perpendicular to the traveling direction gradually increases can be selected as appropriate, but the preferable rate of change is a linear function from the minimum cross-sectional area to the maximum cross-sectional area of the introduction path. It changes dynamically.
- the cross-sectional shape of the inlet is preferably circular, but any shape can be arbitrarily selected.
- the shape may be a circle, an ellipse, a semicircle, a square, or the like.
- Figure 3 is an example in which are merged into ⁇ -shaped pull two inlet channel (3) fine channel represented by Y n from the force et respectively (4).
- a gas that causes a chemical reaction or a gas to be mixed is introduced into each of the two introduction channels, so that it can be evenly distributed over multiple ⁇ -shaped microchannels. Gas can be distributed to the Therefore, chemical reaction and mixing can be performed on all the microchannels under the same conditions.
- Fig. 4 (a) shows a configuration in which three microchannel structures (6) having microchannels (4) are vertically arranged with respect to one introduction channel (3), that is, in the longitudinal direction of the introduction channel.
- the structures are arranged at regular intervals so that the surfaces of the structures are vertical.
- An inlet (1) is provided at the top of the inlet (3).
- each of the microchannel structures shown in FIG. 4A is similarly positioned with respect to the introduction path (3) as shown in FIG. 4B.
- the introduction path (3) can be provided in two stages in the present invention.
- the microchannel structure (6) may be configured as a kind of microchannel (4). Therefore, the configuration in FIG.
- FIG. Fig. 5 shows an upper cover body (16) in which an inlet (1) and an introduction path (3) are formed in a disk-shaped substrate, and the introduction of the upper cover body into a disk-shaped substrate the same size as the upper cover body.
- This is an example of a microchannel structure (6) in which a lower cover body (17) having a structure is adhered.
- the microchannel substrate having the above microchannels can be manufactured by any method.
- a substrate material such as quartz, ceramic, silicon, metal, or resin is processed by mechanical laser processing, etching, or the like. It can be manufactured by direct processing. Further, when the substrate material is ceramic or resin, it can be manufactured by molding using a metal mold or the like having a channel shape.
- the microchannel structure is used by joining a cover body and a microchannel substrate. As a bonding method for bonding the cover body and the microchannel substrate, a bonding method suitable for each substrate material is used.
- the substrate material is ceramic or metal
- soldering or adhesive is used.
- the substrate material is quartz or resin
- thermal bonding is performed by applying a load at a high temperature of one hundred to several hundred degrees.
- the substrate material is silicon
- the microchannel substrate may be of any color, may be colored, may be colored, and may be transparent or translucent. If it is transparent, the inside can be checked, and if it is colored, the deterioration and reaction of the inside can be prevented by light.
- a processing apparatus is a gas processing apparatus including the above-described microchannel structure, and a conduit communicating with the inlet and transferring a gas.
- the diameter (5) of the conduit for introducing the gas as shown in FIG. 6 is about several to several tens of cm (for example, specifically, about 1.0 to 1.5 cm).
- the length of the conduit (9) is about several tens of cm (for example, specifically about 15 to 20 cm).
- a quartz conduit (10) is heated from the outside of the conduit to the heater (15). Is heated by a heating device or member.
- the surface area (specific surface area) per unit volume at which the gas comes into contact with the heated quartz conduit is 80 m- 1 if the conduit diameter is 5 cm and the conduit length is 20 cm. (Calculation formula: inner surface area of conduit ⁇ conduit volume)
- quartz micro-pores having a width and depth of 500 win and 10 micro-channels with a channel length of 20 cm are formed.
- surface area per unit volume of the fine channel of the flow channel structure (specific surface area) is, 8 0 0 0 m one 1: a (formula internal surface area ⁇ the channel volume of the flow path). Therefore, if the gas passes through the conduit in Fig. 6 and the microchannel structure in Fig. 4 (b) at the same time, the specific surface area where the heated quartz comes into contact with the gas will be the microchannel structure. Since the specific surface area is 100 times that of the conduit, the thermal efficiency of the microchannel structure is about 100 times higher than that of the conduit.
- the gas can be activated or decomposed about 100 times faster. Considering this, it is only necessary to use a very short length to activate and decompose gas at the same level as a conduit of the above size.
- the width and depth of the microchannel are used, for example, the length may be about 200 ⁇ m. Therefore, when the present invention is used, a device for activating and decomposing gas can be miniaturized.
- the microchannel structure or the gas treatment apparatus of the present invention may include one or more metals (one or more) on the entire wall of the microchannel (4) or at one or several locations. 18) may be arranged.
- a metal wire having a diameter equal to or smaller than the inner diameter of the microchannel or a size that can enter the channel may be inserted as shown in FIG. 7A. B and B.
- a known method such as vapor deposition, sputtering, or CVD may be used to form a metal thin film on the entire or partial wall of the microchannel.
- a metal that exhibits a catalytic action for activating or decomposing a gas is preferable.
- the metal when the metal is arranged in a microchannel, it is more preferable that the metal can be directly used as a heater by heating the metal.
- Such metals include platinum, tungsten, molybdenum, tantalum, titanium, ruthenium, and palladium when activating or decomposing N 20 (nitrogen oxide) or NH 3 (ammonia) as a gas. , Chrome and the like. At least one energy generating member for providing energy to the catalyst may be included.
- a heating means such as a heater or the like provided outside the microchannel structure or the gas processing apparatus.
- the gas introduced into the microchannel may be heated by heating the metal.
- the metal arranged on the wall of the microchannel structure or the microchannel of the gas processing apparatus described above is connected to at least one current generating member (power supply) for flowing an electric current, and the electric current is supplied. It may be heated by flowing, or it may be heated by generating an eddy current in the metal arranged by electromagnetic induction.
- the catalytic effect of metal is also added, and gas activation, decomposition, mixing, and reaction can be performed more efficiently.
- the means described in the present invention include devices, methods, processes, members, parts, and the like.
- a metal is placed at several locations on the wall of the microchannel structure or the microchannel in the gas processing device to give a potential difference between the metals.
- the introduced gas may be activated, decomposed, mixed, and reacted.
- the microchannel structure or the gas treatment apparatus of the present invention may include at least one voltage generating unit for generating an electric field between metals disposed at several places on the wall of the microchannel. good.
- the electric field between the metals is 1 X 1 0 6 VZm.
- the distance between the metals shown in FIG. 7D that is, the depth of the microchannel is 1 ⁇
- an electric field of 1 ⁇ 10 6 V Zm This is possible if there is a power supply of about 10 V.
- DC 10 V can be realized by using one to several dry batteries.
- the voltage supply device can be greatly simplified, and a discharge can be generated in the microchannel to activate, decompose, mix and react the introduced gas.
- microchannel structure or the gas treatment device of the present invention a process of mixing, activating, decomposing, and reacting gas can be easily performed.
- the introduced gas is heated, and is placed in the microchannel.
- the gas can be activated by applying a voltage between the plurality of metals to cause a discharge in the gas (generating a plasma).
- the gas activated in the microchannel in the microchannel structure or the gas processing apparatus of the present invention may be brought into contact with a substrate provided outside the microchannel structure or the gas processing apparatus. . By forming a film derived from the activated gas on the substrate, a uniform film can be formed by this contact.
- the microchannel structure or the gas processing apparatus of the present invention includes a microchannel structure provided with heating means for heating gas introduced into the microchannel, provided outside the microchannel structure. It is preferably a body. Further, in order to allow the microchannel structure to withstand a higher temperature when heated, specifically, a temperature of 100 ° C. or higher, the microchannel structure and the conduit according to the present invention are required. Is preferably a quartz glass, more preferably a synthetic quartz glass, particularly a synthetic quartz glass having a high purity.
- the microchannel structure or the gas treatment apparatus of the present invention can be used for a gas reaction reactor.
- a gas introduced into the microchannel for example, benzene and ammonia
- the above-mentioned metal catalyst such as platinum or tandastein is electrically heated or externally.
- a reaction method for directly synthesizing aniline by increasing the catalytic efficiency by heating is used.
- a narrow space called a microchannel is utilized.
- a reaction field can be provided, and the collision frequency of the reactants can be increased to improve the efficiency.
- the gas when mixing two or more gases, for example, the gas can be introduced into the microchannel structure shown in FIG. 3 and the two or more gases can be brought into contact to achieve the mixing.
- the gas used in these treatments is not particularly limited as long as it does not deviate from the object of the present invention.
- tetraethoxysilane S i (OC 2 H 5 ) 4
- (2 H 2 S i C 1) dichlorosilane nitrogen and the like.
- Nitric oxide, ammonia, or both can be used simultaneously.
- the microchannel structure of the present invention comprises: an inlet for introducing a gas and an introduction channel communicating with the gas; a microchannel communicating with the introduction channel and uniformly distributing and sending the gas; And a discharge path communicating with the minute flow path and discharging the gas, and a discharge port communicating with the discharge path.
- the inside diameter of the introduction path is larger than the inside diameter of the minute flow path and gradually increases or becomes the same as the distance from the communicating position with the introduction port increases. In this way, gas can be evenly distributed to each microchannel.
- the arrangement of the microchannel of the present invention is not particularly limited as long as it is connected to the introduction path at a position different from the introduction port. More specifically, as shown in Fig. 1, this point is closest to the inlet and farthest from the microchannel Y to the inlet! /,
- the fine channel device having a fine channel Y n passages microchannels n book has communicated with the inlet passage to, X 0 the communicating position between the inlet and the introduction passage, the fine channel Y! X i is the communication position with the introduction path, and X is the communication position.
- the length along the inlet path between the communicating position a physician or less, the communicating position, fine small channels, the length between the fine channel ordered, most Tore from the inlet
- the fine channel Y n X n is the communication position between the flow path and the introduction path
- Y n _ is the micro flow path that is closer to the introduction port than the micro flow path.
- ⁇ ⁇ is the communication position between the micro flow path and the introduction path.
- the microchannel structure may be composed of one or more microchannel substrates having a microchannel. Further, a structure may be employed in which a plurality of introduction paths are provided on the substrate, and each introduction path communicates with the microchannel substrate, and further with the microchannel. In this way, a large amount of gas can be treated.
- the present invention is a gas processing apparatus including: the above-described microchannel structure; and a conduit communicating with the inlet and transferring the gas. With such a configuration, the gas can be uniformly distributed in the microchannel structure, and the conduit for transferring the gas to be processed to the microchannel structure is connected to the microchannel structure.
- the processing apparatus can be configured to perform processing such as mixing, activation, heating, and decomposition of gases.
- one or more metals may be arranged on the entire surface of the microchannel, or at one or several locations.
- the metal is preferably one that exerts a catalytic action for activating or decomposing gas, and more preferably one that can be directly used as a heater by heating a metal disposed in a microchannel. In this way, the gas can be more efficiently processed, such as activated, decomposed, mixed, and reacted.
- the metal include iron, tungsten, molybdenum, tantalum, titanium, and vanadium, and among them, tungsten is preferably used.
- the means for heating the metal in the present invention includes at least one heating means such as a heater such as a heater provided outside the microchannel structure or the gas processing apparatus.
- the gas introduced into the microchannel may be heated by heating the metal.
- a metal is arranged at two or more places, which is a part of a wall in a microchannel of a microchannel structure or a gas processing apparatus, and a potential difference is given between the metals to cause a voltage between the metals.
- a field may be created. This makes it possible to activate, decompose, mix, and react the introduced gas by causing a discharge in the gas in the microchannel (generating plasma).
- the microchannel structure or the gas treatment apparatus of the present invention may include a voltage generating means for generating an electric field between metals disposed at several places on the wall of the microchannel.
- the flow path width can be from several tens of ⁇ m to several hundreds of ⁇ m.
- a discharge is generated in the microchannel, and the introduced gas can be activated, decomposed, mixed, and reacted.
- the width of the microchannel of the present invention is, for example, 10 to 500 ⁇ m, preferably 20 to 200 ⁇ m, and more preferably 50 to 100 ⁇ .
- An example of the height of the microchannel of the present invention is 1 to 10 ° ⁇ , preferably 10 to 50 m, and more preferably 20 to 30.
- An example of the length of the microchannel according to the present invention is 0.1 to 20 cm, preferably 1 to 10 cm, and more preferably 3 to 5 cm.
- the microchannel structure or the gas treatment apparatus of the present invention is provided with a microchannel structure provided outside the microchannel structure and provided with a heating unit for heating the gas introduced into the microchannel.
- the microchannel structure and the conduit may be made of any material, but are preferably formed of fused silica glass, synthetic silica glass, composite silica glass, or the like.
- the microchannel structure and the conduit according to the present invention are required. More preferably, it is a synthetic quartz glass having high purity. By doing so, the introduced gas can be heated to decompose or react with the gas.
- a microchannel structure (6) as shown in FIG. 8 was manufactured. 7 OmmX 5 OmmX Thickness 1.65 mm quartz substrate by blasting, 2 mm wide, 500 depth introduction channel (3), 500 ⁇ m width and 500 ⁇ depth communicating with this introduction channel Ten micro channels (4) having a length of 15 cm and having a turn-back position in the middle were formed. The interval between the positions where the ten microchannels and the introduction channel communicated with each other was 2 mm.
- a quartz substrate of the same size as the microchannel substrate (8) was used as a cover body (7), and bonded to the microchannel surface of the microchannel substrate by thermal bonding to produce a microchannel structure.
- N 20 was flowed at a flow rate of 10 L using a liquid feed pump, and 10 flow channels were set at the outlets of the 10 micro channels.
- a meter was arranged to measure the discharged flow rate. In the range of 0. 9 to 1. 1 L / min from each fine channel, N 2 0 is discharged, it was confirmed that the uniform N 2 O flow to each fine channel.
- a microchannel structure (6) shown in FIG. 9A was produced.
- the same three microchannel structures as in FIG. 8 are used.
- the three microchannel structures are arranged at 5 cm intervals in communication with the introduction channel (3).
- Tungsten wires (12) with a diameter of 0.3 mm were arranged in the microchannels of these microchannel structures as shown in Fig. 9B.
- the microchannel structure shown in Fig. 9A was placed in a CVD device (13) as shown in Fig. 10 and heated by a heater (15) installed in the furnace of the CVD device.
- the inside of the furnace of the CVD system was evacuated to 0.3 Torr by a vacuum pump. It should be noted that a cantanore material was used as one material of the heater.
- NH 3 gas was introduced at a flow rate of 10 L / min from the gas inlet, and a SiN film was formed on a Si wafer substrate (14) having a diameter of 3.5 inches.
- the Si wafer substrate was placed 1 Omm below the microchannel structure and 1 mm away from the outlet of the microchannel structure.
- the temperature of the heater is 1000-1100 ° C, lower than the softening point (1600-1700 ° C) at which the quartz softens (the internal strain of quartz can be removed in 15 minutes). Cold point, that is, a temperature slightly lower than 110 ° C to 1200 ° C). A film could be formed.
- the thickness of the SiN film formed on the three Si wafer substrates was about 5 to 7 nm, and the film could be formed extremely uniformly.
- the microchannel structure is externally heated using the heater of the CVD apparatus.
- the tungsten wire itself may be used as a heater by connecting a power supply to the tungsten wire arranged in the micro flow path to directly supply current, or by generating eddy current by electromagnetic induction.
- a microchannel structure (6) shown in FIG. 5 was produced.
- the microchannel substrate is to be formed by radially blasting 18 microchannels with a width of 500 m, a depth of 10 m and a length of 30 mm on the surface of a quartz substrate with a diameter of 5 inches and a thickness of 1 mm. It was manufactured by At the outer end of each microchannel, a top cover body
- a through hole with a diameter of 1 mm was provided to allow the introduction path of (16) and the exit of the lower cover body (17) to communicate with the flow path.
- the upper cover (16) has a 2mm diameter inlet (1) in the center of a quartz substrate of the same size as the microchannel substrate, and the inlet (3) has a diameter of 110mm and a depth of 300 ⁇ .
- a cylindrical concave part and 18 radial distribution channels (19) were formed by blasting.
- the lower cover (17) has a cylindrical recess with a diameter of 50 mm and a depth of 300 / centered on the center of a quartz substrate of the same size as the microchannel substrate, and 18 radial collection channels (20). ). Eighteen through holes with a diameter of lmm were radially formed on the bottom surface of the recess by blast processing as gas outlets.
- the microchannel structure was formed by thermally bonding the upper cover, the microchannel substrate, and the lower cover.
- platinum (11) was sputtered to a thickness of 100 nm on at least one of the upper and lower surfaces of the microchannel.
- the platinum on the upper surface on which the film was formed was connected to a DC 10V power supply via a connection switch, and the platinum on the lower surface was grounded.
- This microchannel structure was placed in a CVD apparatus (13) as shown in Fig. 12.
- the inside of the CVD furnace was evacuated to 0.3 Torr by a vacuum pump.
- the inside of the CVD furnace was heated to 300 ° C with a heater (15).
- gas introduction NH 3 gas was introduced through the mouth at a flow rate of 5 L, and a SiN film was formed on a Si wafer substrate (14) having a diameter of 5 inches.
- the Si wafer substrate was placed 1 mm below the small channel structure.
- a voltage was applied to the platinum electrode on the upper surface of the microchannel at the same time as the introduction of the NH 3 gas, and a discharge was generated in the microchannel, an extremely good SiN film with few film formation defects was formed.
- a film could be formed at about 7 nm.
- the present invention can provide a microchannel structure capable of uniformly distributing gas to a plurality of microchannels arranged two-dimensionally or three-dimensionally.
- a gas processing apparatus capable of efficiently processing, activating, decomposing, mixing, and reacting gas can be provided by utilizing the microchannel structure.
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04721704A EP1637221A4 (en) | 2003-03-19 | 2004-03-18 | BODY WITH MICRO CHANNEL STRUCTURE |
US10/548,600 US7488454B2 (en) | 2003-03-19 | 2004-03-18 | Microchannel structure body |
US12/180,051 US20090028762A1 (en) | 2003-03-19 | 2008-07-25 | Microchannel structure body |
Applications Claiming Priority (2)
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JP2003075899 | 2003-03-19 | ||
JP2003-75899 | 2003-03-19 |
Related Child Applications (1)
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US12/180,051 Division US20090028762A1 (en) | 2003-03-19 | 2008-07-25 | Microchannel structure body |
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WO2004082823A1 true WO2004082823A1 (ja) | 2004-09-30 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2004/003683 WO2004082823A1 (ja) | 2003-03-19 | 2004-03-18 | 微小流路構造体 |
Country Status (3)
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US (2) | US7488454B2 (ja) |
EP (1) | EP1637221A4 (ja) |
WO (1) | WO2004082823A1 (ja) |
Cited By (1)
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WO2021261200A1 (ja) * | 2020-06-23 | 2021-12-30 | Nok株式会社 | マイクロ流体デバイス |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070053812A1 (en) * | 2003-03-07 | 2007-03-08 | Tosoh Corporation | Minute flow path structure body and die |
EP1637221A4 (en) * | 2003-03-19 | 2008-01-23 | Tosoh Corp | BODY WITH MICRO CHANNEL STRUCTURE |
JP4753367B2 (ja) * | 2005-11-25 | 2011-08-24 | 日本電子株式会社 | 有機合成反応装置 |
US11358111B2 (en) * | 2019-03-20 | 2022-06-14 | Battelle Memorial Institute, Pacific Northwest National Laboratories | Reactor assemblies and methods of performing reactions |
JP7145837B2 (ja) * | 2019-10-16 | 2022-10-03 | 株式会社神戸製鋼所 | 反応器及びこれを備えた反応システム |
KR20230106589A (ko) * | 2020-09-16 | 2023-07-13 | 스타즈 테크놀로지 코퍼레이션 | 마이크로 및 메소 채널 공정 시스템을 유도 가열하는 방법 및 장치 |
WO2023178248A1 (en) * | 2022-03-16 | 2023-09-21 | Stars Technology Corporation | Method and apparatus for inductively heating micro- and meso-channel process systems |
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JP2003048701A (ja) * | 2001-08-01 | 2003-02-21 | Casio Comput Co Ltd | 蒸発装置、改質装置及び燃料電池システム |
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JP3737221B2 (ja) | 1996-09-06 | 2006-01-18 | 英樹 松村 | 薄膜作成方法及び薄膜作成装置 |
DE19912318A1 (de) | 1999-03-19 | 2000-09-28 | Dbb Fuel Cell Engines Gmbh | Plattenreaktor |
US6932951B1 (en) * | 1999-10-29 | 2005-08-23 | Massachusetts Institute Of Technology | Microfabricated chemical reactor |
AU2001223877A1 (en) * | 2000-01-11 | 2001-07-24 | Aea Technology Plc | Catalytic reactor |
US7241423B2 (en) * | 2000-02-03 | 2007-07-10 | Cellular Process Chemistry, Inc. | Enhancing fluid flow in a stacked plate microreactor |
DE10112074A1 (de) | 2001-03-12 | 2002-10-02 | Forschungszentrum Juelich Gmbh | Brennstoffzelle mit gleichmäßiger Verteilung von Betriebsmitteln |
JP2002292275A (ja) | 2001-03-29 | 2002-10-08 | Kanagawa Acad Of Sci & Technol | マイクロチップパイルアップ型化学反応システム |
US7201873B2 (en) * | 2001-04-16 | 2007-04-10 | Tosoh Corporation | Fine channel device, method for producing the fine channel device and use of the same |
US7718099B2 (en) * | 2002-04-25 | 2010-05-18 | Tosoh Corporation | Fine channel device, fine particle producing method and solvent extraction method |
US7402719B2 (en) * | 2002-06-13 | 2008-07-22 | Velocys | Catalytic oxidative dehydrogenation, and microchannel reactors for catalytic oxidative dehydrogenation |
EP1380337B1 (en) * | 2002-07-12 | 2012-11-14 | Tosoh Corporation | Fine channel device and a chemically operating method for fluid using the device |
EP1391237B1 (en) * | 2002-08-01 | 2011-09-21 | Tosoh Corporation | Fine channel device, desksize chemical plant and fine particle producing apparatus employing them |
EP1637221A4 (en) * | 2003-03-19 | 2008-01-23 | Tosoh Corp | BODY WITH MICRO CHANNEL STRUCTURE |
US7422910B2 (en) * | 2003-10-27 | 2008-09-09 | Velocys | Manifold designs, and flow control in multichannel microchannel devices |
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2004
- 2004-03-18 EP EP04721704A patent/EP1637221A4/en not_active Ceased
- 2004-03-18 WO PCT/JP2004/003683 patent/WO2004082823A1/ja active Application Filing
- 2004-03-18 US US10/548,600 patent/US7488454B2/en not_active Expired - Fee Related
-
2008
- 2008-07-25 US US12/180,051 patent/US20090028762A1/en not_active Abandoned
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JP2001521816A (ja) * | 1997-11-05 | 2001-11-13 | ブリティッシュ・ニュークリア・フューエルズ・パブリック・リミテッド・カンパニー | 化学反応実施方法 |
JP2003048701A (ja) * | 2001-08-01 | 2003-02-21 | Casio Comput Co Ltd | 蒸発装置、改質装置及び燃料電池システム |
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WO2021261200A1 (ja) * | 2020-06-23 | 2021-12-30 | Nok株式会社 | マイクロ流体デバイス |
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US7488454B2 (en) | 2009-02-10 |
EP1637221A1 (en) | 2006-03-22 |
US20090028762A1 (en) | 2009-01-29 |
EP1637221A4 (en) | 2008-01-23 |
US20060171867A1 (en) | 2006-08-03 |
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