WO2004072323A3 - High reflectivity atmospheric pressure furnace for preventing contamination of a work piece - Google Patents

High reflectivity atmospheric pressure furnace for preventing contamination of a work piece Download PDF

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Publication number
WO2004072323A3
WO2004072323A3 PCT/US2004/003145 US2004003145W WO2004072323A3 WO 2004072323 A3 WO2004072323 A3 WO 2004072323A3 US 2004003145 W US2004003145 W US 2004003145W WO 2004072323 A3 WO2004072323 A3 WO 2004072323A3
Authority
WO
WIPO (PCT)
Prior art keywords
heating elements
furnace
temperature
atmospheric pressure
work piece
Prior art date
Application number
PCT/US2004/003145
Other languages
French (fr)
Other versions
WO2004072323B1 (en
WO2004072323A2 (en
Inventor
Nicholas Gralenski
Original Assignee
Solaicx
Nicholas Gralenski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solaicx, Nicholas Gralenski filed Critical Solaicx
Publication of WO2004072323A2 publication Critical patent/WO2004072323A2/en
Publication of WO2004072323A3 publication Critical patent/WO2004072323A3/en
Publication of WO2004072323B1 publication Critical patent/WO2004072323B1/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
    • F27D7/02—Supplying steam, vapour, gases, or liquids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D9/00—Cooling of furnaces or of charges therein
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0008—Resistor heating
    • F27D2099/0011—The resistor heats a radiant tube or surface

Abstract

A furnace incorporating a novel thermal design is disclosed. Heating element temperature is reduced compared to conventional designs while providing a precisely controlled process temperature in the range1000 - 1400 degrees centigrade. The furnace uses a plurality of Kanthal heating elements arranged in a planar array as close to the work as possible thus approximating an isothermal condition with respect to the work. Means are provided for bringing the heating elements into the process chamber. Further, the process chamber is made of aluminum and its internal surfaces are highly polished to reflect heat. The chamber walls have built in active cooling to carry non-reflected heat away. The heating elements are modular to facilitate removal and replacement without disassembly of the furnace. The configuration of the heating elements is linear rather than coiled and the temperature is monitored directly by measuring the electrical resistance of the Kanthal wires.
PCT/US2004/003145 2003-02-07 2004-02-03 High reflectivity atmospheric pressure furnace for preventing contamination of a work piece WO2004072323A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44556203P 2003-02-07 2003-02-07
US60/445,562 2003-02-07

Publications (3)

Publication Number Publication Date
WO2004072323A2 WO2004072323A2 (en) 2004-08-26
WO2004072323A3 true WO2004072323A3 (en) 2004-12-09
WO2004072323B1 WO2004072323B1 (en) 2005-02-17

Family

ID=32869380

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/003145 WO2004072323A2 (en) 2003-02-07 2004-02-03 High reflectivity atmospheric pressure furnace for preventing contamination of a work piece

Country Status (1)

Country Link
WO (1) WO2004072323A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010008084A1 (en) * 2010-02-15 2011-08-18 Leybold Optics GmbH, 63755 Device for thermal treatment of substrates
DE102010016506A1 (en) 2010-04-19 2011-10-20 Roth & Rau Ag Transportation system for use in flowthrough system e.g. drying furnace, has insulating support provided with heating elements within isolation pipe, and channels provided in wall of isolation pipe for electrical contact of heating elements
DE102010016509A1 (en) 2010-04-19 2011-10-20 Roth & Rau Ag Flowthrough system for processing substrate in atmosphere, has gas inlets and gas outlets arranged on line parallel to rollers, where one of gas outlets is fixed on channels at transport direction while other gas outlet is placed on chamber
DE102010016511A1 (en) 2010-04-19 2011-10-20 Roth & Rau Ag Substrate processing system comprises a process chamber, where a thermal insulation is provided at an inner side of a process chamber wall and has a layer of individual profiles, which are parallely arranged insulating tubes or rods
KR101155813B1 (en) * 2011-08-24 2012-06-12 (주)써모니크 Graphite furnace

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468260A (en) * 1982-06-22 1984-08-28 Ushio Denki Kabushiki Kaisha Method for diffusing dopant atoms
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
US5762713A (en) * 1995-11-28 1998-06-09 Texas Instruments Incorporated RTP lamp design for oxidation and annealing
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
WO1999002757A1 (en) * 1997-07-11 1999-01-21 Asm America, Inc. Reflective surface for cvd reactor walls
WO2001097271A1 (en) * 2000-06-09 2001-12-20 Primaxx, Inc. Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468260A (en) * 1982-06-22 1984-08-28 Ushio Denki Kabushiki Kaisha Method for diffusing dopant atoms
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US5762713A (en) * 1995-11-28 1998-06-09 Texas Instruments Incorporated RTP lamp design for oxidation and annealing
WO1999002757A1 (en) * 1997-07-11 1999-01-21 Asm America, Inc. Reflective surface for cvd reactor walls
WO2001097271A1 (en) * 2000-06-09 2001-12-20 Primaxx, Inc. Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor

Also Published As

Publication number Publication date
WO2004072323B1 (en) 2005-02-17
WO2004072323A2 (en) 2004-08-26

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