WO2004065654A1 - 成膜装置用構成部品およびその洗浄方法 - Google Patents
成膜装置用構成部品およびその洗浄方法 Download PDFInfo
- Publication number
- WO2004065654A1 WO2004065654A1 PCT/JP2004/000540 JP2004000540W WO2004065654A1 WO 2004065654 A1 WO2004065654 A1 WO 2004065654A1 JP 2004000540 W JP2004000540 W JP 2004000540W WO 2004065654 A1 WO2004065654 A1 WO 2004065654A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- film
- adhered
- film forming
- forming apparatus
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000005406 washing Methods 0.000 title abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 129
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims description 54
- 239000007788 liquid Substances 0.000 claims description 27
- 239000002245 particle Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007751 thermal spraying Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000012530 fluid Substances 0.000 abstract 2
- 230000006378 damage Effects 0.000 description 7
- 239000002313 adhesive film Substances 0.000 description 6
- 230000035515 penetration Effects 0.000 description 5
- 238000005422 blasting Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a component of a film forming apparatus for forming various thin films of a film forming material on a substrate, and a method of cleaning the component.
- LSIs large-scale integrated circuits
- solar cells solar cells
- liquid crystal plasma displays etc.
- film-forming equipment that deposits thin films on substrates by vapor deposition, sputtering, CVD, or other methods. Manufactured in.
- the above-mentioned film-forming material forms an adhered film also on the surface of a component such as an adhesion-preventing plate such as a substrate mask or a support frame in a film-forming apparatus in forming a thin film.
- the deposited film is deposited thickly by replacing the substrate in the same film forming apparatus and repeating the film forming process, and at a certain point, the deposited film is broken or peels off and becomes a cause of dust generation and the like.
- dust adheres to the substrate in the course of film formation and impairs the characteristics of the target film, which lowers the yield of semiconductor products to be manufactured.
- a cleaning method in which a component having the adhered film is immersed in a cleaning liquid to dissolve the adhered film is employed.
- FIG. 3 shows that the surface of the base material 31 that constitutes the component is subjected to blasting such as shot blasting, which sprays a small-diameter steel ball, or glass bead blasting, which sprays a glass ball. It is a thing.
- the unevenness increases the surface area of the base material 31 and increases the adhesive force of the adhesive film d, thereby preventing the adhesive film d from being broken or peeled off.
- FIG. 3 shows an example in which an uneven surface is formed on the surface of a base material 32 constituting a component by a mechanical processing method such as cutting or embossing.
- the surface of the base material 32 is deformed by the stress that tends to peel off the adhered film d, and the stress is relieved, so that destruction and peeling-off of the adhered film d are prevented.
- FIG. 3 shows a case where the surface of the base material 33 is blasted as described above, and then a layer 34 is provided on the surface of the base material 33 by coating a soft metal thereon. .
- the soft layer 34 alleviates the destruction and peeling stress of the adhesive film d, and prevents the destruction and peeling-off of the adhesive film d.
- the adhered film is eventually destructed and peeled off by repeating the film forming process, so that it is necessary to wash the component in order to reuse it.
- the components having the above surface structure have a structure in which the adhered film is hardly broken or peeled off in the first place, it takes a long time for cleaning to completely dissolve and remove the adhered film with the cleaning liquid. However, the operating efficiency of the film forming apparatus was reduced.
- the present invention has a structure in which even a component having the above-mentioned surface structure in which the adhered film is not easily broken or peeled off can easily remove the adhered film in a short time during cleaning. It is an object to provide a component for a film forming apparatus. Disclosure of the invention
- a component for a film forming apparatus is a component of a film forming apparatus for forming a thin film on a substrate using a film forming material.
- a large number of through-holes are provided from the back surface to the front surface of the component in order to allow the cleaning liquid to penetrate into the interface between the component and the film made of the film-forming material adhered to the surface of the component.
- the cleaning liquid dissolves the adhered film from the surface and also penetrates through the through hole to dissolve the adhered film from the interface between the component and the adhered film.
- the film-forming material particles enter the above-described through holes, or plasma generated during film formation penetrates, and the components are attached. There is a possibility that an adhered film may be deposited on the existing apparatus main body.
- the diameter of the through-hole should be set to a size such that the film-forming material particles cannot enter or the plasma cannot enter.
- the through-hole may be provided in an optically blind state with respect to the surface of the component, for example, inclined so as not to penetrate in the vertical direction.
- the cleaning liquid penetrates from the edge of the layer and also penetrates through the through hole to dissolve the layer, so that the adhered film can be peeled off in a short time.
- this layer serves as a lid for preventing the invasion of the film forming material particles and the intrusion of the plasma.
- the method of cleaning a component for a film forming apparatus includes the above component having an adhered film formed on a surface thereof, that is, a component provided with a large number of through holes from the back surface to the surface of the component.
- any one of the components formed by spraying, vapor deposition, sputtering, plating, laminating, or the like, on the surface of the above component is formed of a layer made of a metal film having a property of being easily soluble in a cleaning solution. It is characterized by being immersed in a cleaning solution.
- the cleaning liquid in which the component for the film forming apparatus is immersed dissolves from the surface of the adhered film, and also penetrates through each of the through holes to dissolve the adhered film and form the adhered film into the component. Peel from BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1 is a partially enlarged sectional view of a component according to the present invention.
- FIG. 2 is a partially enlarged cross-sectional view of a component having a structure in which film-forming material particles and the like do not enter the through-hole.
- A shows the diameter of the through-hole when the film-forming material particles enter or the plasma enters.
- B is a cross-sectional view when the through-hole is inclined so as not to penetrate vertically from the front surface to the back surface of the base material, and
- c is a front surface of the base material.
- FIG. 3 is a cross-sectional view when a layer made of a metal film having a property of being easily soluble in a cleaning liquid is formed.
- FIG. 3 is a partially enlarged cross-sectional view of a conventional component having a surface structure in which the adhered film is difficult to break and peel off.
- (A) is a cross-sectional view when the surface is blasted, and (b) is a cross-sectional view.
- FIG. 3C is a cross-sectional view of a case where an uneven surface is formed on the surface by a mechanical processing method such as cutting or embossing
- FIG. 3C is a cross-sectional view of a case where a soft metal is formed on the surface.
- BEST MODE FOR CARRYING OUT THE INVENTION Referring to FIG. 1, reference numeral 1 is an enlarged view of a base material constituting a component for a film forming apparatus. Examples of the components constituted by the base material 1 include a substrate mask in a film forming apparatus and a support frame for a wafer.
- the adhered film d also adheres to the above-mentioned components other than the substrate.
- This adhered film d is deposited thickly by exchanging the substrate in the above film forming apparatus and repeating the film forming process, and at some point it breaks and peels off, causing dust to be generated. There is a possibility that the film adheres and impairs the properties of the target film.
- the base material 1 may be immersed and removed in a cleaning solution S.
- a cleaning solution S since the above-mentioned cleaning solution S only dissolves the adhered film d from the surface, the adhered film d is removed. It took time to remove.
- the cleaning liquid S is dissolved only from the surface of the adhered film d, the adhered film d may be peeled off during the cleaning.
- the cleaning liquid S dissolves the adhered film d from the surface and the end surface of the base material 1.
- the cleaning liquid S penetrated from the large number of through-holes 2 so that the interface between the adhered film d and the base material 1 was also dissolved.
- the number of the through-holes 2 is not particularly limited as long as the strength of the base material 1 is not impaired. For example, if the distance between two adjacent through-holes 2 is 3 cm to 5 cm, The above effect is obtained.
- the adhesion film d may be deposited on the apparatus main body to which the component is attached.
- the through hole 2 a structure that prevents the penetration of the film-forming material particles and the penetration of the plasma.
- FIGS. 2A to 2C are enlarged cross-sectional views of an example of an embodiment in which the through-hole 2 has a structure for preventing the penetration of film-forming material particles and the intrusion of plasma.
- the present invention is not limited to these embodiments as long as it does not deviate from.
- the diameter of the through hole 21 provided in the base material 11 is set to 0.8 mm ⁇ in which the plasma P cannot penetrate or pass.
- an optically blind hole is formed by inclining the through hole 22 from the front surface to the back surface of the base material 12 so as not to penetrate in the vertical direction.
- the film forming material particles and the plasma may pass through the opening on the surface side of the through hole 2 2. Since it collides with the inner wall of 2 and hardly enters or penetrates into the through hole 22, it is possible to prevent the adhesion film d from being deposited on the apparatus main body to which the component is attached.
- a layer 14 made of a metal film having a property of being easily soluble in a cleaning liquid is formed by spraying on the surface of the base material 13.
- the layer 14 serves as a lid for preventing the intrusion of the film forming material particles and the invasion of the plasma.
- the adhesion film d is deposited on the layer 14.
- This layer 14 plays a role of relaxing the destruction and peeling stress of the adhered film d and preventing the destruction and peeling-off of the adhered film d during the film forming process on the substrate.
- it has a function of reacting and dissolving with the cleaning liquid S faster than the base material 13 to peel off the adhered film d from the base material 13.
- the cleaning liquid S permeated only from both ends of this layer 14, but by providing the through-holes 23, the cleaning liquid S reaches various parts of the layer 14 and adheres in a shorter time than before. Can be peeled off.
- a component for a film forming apparatus and a method for cleaning the same include a method for forming a film on the surface of the component by attaching the component and an adhered film made of the film-forming material.
- the adhesion film can be easily formed in a shorter time than in the case where the cleaning solution dissolves only from the surface of the adhesion film.
- This component can be removed from the film by using deposition, sputtering, CVD, or other methods to deposit a thin film on the substrate, such as an adhesion-preventing plate such as a substrate mask or a wafer support frame. It is suitable for use as a component of a film forming apparatus.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2511832A CA2511832C (en) | 2003-01-23 | 2004-01-22 | Components for a film-forming device and method for cleaning the same |
US10/538,087 US7436068B2 (en) | 2003-01-23 | 2004-01-22 | Components for film forming device |
EP04704359.1A EP1586673B1 (en) | 2003-01-23 | 2004-01-22 | Component for film forming device and method of washing the component |
JP2005508116A JP4072920B2 (ja) | 2003-01-23 | 2004-01-22 | 成膜装置用構成部品およびその洗浄方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003015266 | 2003-01-23 | ||
JP2003-015266 | 2003-01-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004065654A1 true WO2004065654A1 (ja) | 2004-08-05 |
Family
ID=32767436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/000540 WO2004065654A1 (ja) | 2003-01-23 | 2004-01-22 | 成膜装置用構成部品およびその洗浄方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7436068B2 (ja) |
EP (1) | EP1586673B1 (ja) |
JP (1) | JP4072920B2 (ja) |
KR (1) | KR101024044B1 (ja) |
CN (1) | CN100476015C (ja) |
CA (1) | CA2511832C (ja) |
MY (1) | MY172602A (ja) |
TW (1) | TWI323288B (ja) |
WO (1) | WO2004065654A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4564434B2 (ja) * | 2005-09-30 | 2010-10-20 | Okiセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
KR20230091470A (ko) | 2021-12-16 | 2023-06-23 | (주)씨엠디엘 | 증착기 부품 세정공정 및 이를 사용한 증착기 부품 세정시스템 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366901B2 (ja) * | 1986-06-03 | 1988-12-22 | Fujitsu Ltd | |
JPH05230624A (ja) * | 1992-02-20 | 1993-09-07 | Fujitsu Ltd | Pvd装置の内部治具発塵防止方法及び内部治具処理装置 |
US5628839A (en) * | 1995-04-06 | 1997-05-13 | Nihon Sinku Gijutsu Kabusiki Kaisha | Components of apparatus for film making and method for manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
KR100242986B1 (ko) * | 1996-11-15 | 2000-02-01 | 김영환 | 상압화학기상증착장비의 머플 설치구조 |
US6207553B1 (en) * | 1999-01-26 | 2001-03-27 | Advanced Micro Devices, Inc. | Method of forming multiple levels of patterned metallization |
JP3876167B2 (ja) * | 2002-02-13 | 2007-01-31 | 川崎マイクロエレクトロニクス株式会社 | 洗浄方法および半導体装置の製造方法 |
-
2004
- 2004-01-22 JP JP2005508116A patent/JP4072920B2/ja not_active Expired - Lifetime
- 2004-01-22 CA CA2511832A patent/CA2511832C/en not_active Expired - Lifetime
- 2004-01-22 KR KR1020057010900A patent/KR101024044B1/ko active IP Right Grant
- 2004-01-22 EP EP04704359.1A patent/EP1586673B1/en not_active Expired - Lifetime
- 2004-01-22 WO PCT/JP2004/000540 patent/WO2004065654A1/ja active Application Filing
- 2004-01-22 US US10/538,087 patent/US7436068B2/en not_active Expired - Lifetime
- 2004-01-22 CN CNB2004800023510A patent/CN100476015C/zh not_active Expired - Lifetime
- 2004-01-26 MY MYPI20040200A patent/MY172602A/en unknown
- 2004-01-27 TW TW093101769A patent/TWI323288B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366901B2 (ja) * | 1986-06-03 | 1988-12-22 | Fujitsu Ltd | |
JPH05230624A (ja) * | 1992-02-20 | 1993-09-07 | Fujitsu Ltd | Pvd装置の内部治具発塵防止方法及び内部治具処理装置 |
US5628839A (en) * | 1995-04-06 | 1997-05-13 | Nihon Sinku Gijutsu Kabusiki Kaisha | Components of apparatus for film making and method for manufacturing the same |
Non-Patent Citations (1)
Title |
---|
See also references of EP1586673A4 * |
Also Published As
Publication number | Publication date |
---|---|
JP4072920B2 (ja) | 2008-04-09 |
US7436068B2 (en) | 2008-10-14 |
CN100476015C (zh) | 2009-04-08 |
MY172602A (en) | 2019-12-05 |
EP1586673A1 (en) | 2005-10-19 |
KR101024044B1 (ko) | 2011-03-22 |
EP1586673A4 (en) | 2012-07-04 |
KR20050118157A (ko) | 2005-12-15 |
EP1586673B1 (en) | 2013-04-17 |
TWI323288B (en) | 2010-04-11 |
TW200415244A (en) | 2004-08-16 |
CA2511832A1 (en) | 2004-08-05 |
JPWO2004065654A1 (ja) | 2006-05-18 |
CA2511832C (en) | 2012-01-03 |
CN1738921A (zh) | 2006-02-22 |
US20060144418A1 (en) | 2006-07-06 |
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