WO2004057675A1 - Matrice de detecteurs multispectraux - Google Patents
Matrice de detecteurs multispectraux Download PDFInfo
- Publication number
- WO2004057675A1 WO2004057675A1 PCT/FR2003/050186 FR0350186W WO2004057675A1 WO 2004057675 A1 WO2004057675 A1 WO 2004057675A1 FR 0350186 W FR0350186 W FR 0350186W WO 2004057675 A1 WO2004057675 A1 WO 2004057675A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layers
- semiconductor material
- light
- structure according
- layer
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000003989 dielectric material Substances 0.000 claims abstract description 5
- 230000004044 response Effects 0.000 claims abstract description 3
- 238000001514 detection method Methods 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 238000009396 hybridization Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 115
- 239000002019 doping agent Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 230000002745 absorbent Effects 0.000 description 6
- 239000002250 absorbent Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
- H01L27/1467—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/14652—Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
Definitions
- FIGS. 7A to 7R illustrate a method for producing the second variant of the detector array according to the invention.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03809998A EP1573821A1 (fr) | 2002-12-19 | 2003-12-17 | Matrice de detecteurs multispectraux |
US10/540,334 US7352043B2 (en) | 2002-12-19 | 2003-12-17 | Multispectral detector matrix |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0216178A FR2849273B1 (fr) | 2002-12-19 | 2002-12-19 | Matrice de detecteurs multispectraux |
FR02/16178 | 2002-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004057675A1 true WO2004057675A1 (fr) | 2004-07-08 |
Family
ID=32406204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2003/050186 WO2004057675A1 (fr) | 2002-12-19 | 2003-12-17 | Matrice de detecteurs multispectraux |
Country Status (4)
Country | Link |
---|---|
US (1) | US7352043B2 (fr) |
EP (1) | EP1573821A1 (fr) |
FR (1) | FR2849273B1 (fr) |
WO (1) | WO2004057675A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004060365A1 (de) * | 2004-12-15 | 2006-06-29 | Austriamicrosystems Ag | Bauelement mit Halbleiterübergang und Verfahren zur Herstellung |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005098956A1 (fr) * | 2004-04-12 | 2005-10-20 | Nanyang Technological University | Procede et dispositif de photodetection sensibles a la longueur d'onde, utilisant plusieurs jonctions pn |
KR100850859B1 (ko) * | 2006-12-21 | 2008-08-06 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
US7791159B2 (en) * | 2007-10-30 | 2010-09-07 | Panasonic Corporation | Solid-state imaging device and method for fabricating the same |
FR2924803A1 (fr) * | 2007-12-11 | 2009-06-12 | Commissariat Energie Atomique | Dispositif d'analyse spectroscopique interferentielle |
US8399820B2 (en) | 2009-06-23 | 2013-03-19 | Sensors Unlimited, Inc. | Multicolor detectors and applications thereof |
KR101461405B1 (ko) * | 2010-06-01 | 2014-11-13 | 볼리 미디어 커뮤니케이션스 (센젠) 캄파니 리미티드 | 다중 스펙트럼 감광소자 및 그 제작 방법 |
FR2965104B1 (fr) * | 2010-09-16 | 2013-06-07 | Commissariat Energie Atomique | Detecteur bispectral multicouche a photodiodes et procede de fabrication d'un tel detecteur |
FR2982706A1 (fr) * | 2011-11-15 | 2013-05-17 | Soc Fr Detecteurs Infrarouges Sofradir | Dispositif de detection de deux couleurs differentes a conditions de fonctionnement ameliorees |
JP6291895B2 (ja) * | 2014-02-20 | 2018-03-14 | 富士通株式会社 | 赤外線検出器及びその製造方法 |
US9881966B2 (en) * | 2015-07-17 | 2018-01-30 | International Business Machines Corporation | Three-dimensional integrated multispectral imaging sensor |
US10763092B2 (en) * | 2017-11-29 | 2020-09-01 | L-3 Communications Corporation-Insight Technology Division | Dual-spectrum photocathode for image intensification |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4206470A (en) * | 1977-09-01 | 1980-06-03 | Honeywell Inc. | Thin film interconnect for multicolor IR/CCD |
US4514755A (en) * | 1983-07-08 | 1985-04-30 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
WO1999039372A2 (fr) * | 1998-02-02 | 1999-08-05 | Uniax Corporation | Capteurs d'images fabriques a partir de semi-conducteurs organiques |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2756667B1 (fr) * | 1996-12-04 | 1999-02-19 | Thomson Csf | Detecteur d'ondes electromagnetiques bispectral |
US6465860B2 (en) * | 1998-09-01 | 2002-10-15 | Kabushiki Kaisha Toshiba | Multi-wavelength semiconductor image sensor and method of manufacturing the same |
US6373117B1 (en) * | 1999-05-03 | 2002-04-16 | Agilent Technologies, Inc. | Stacked multiple photosensor structure including independent electrical connections to each photosensor |
JP4330210B2 (ja) * | 1999-07-30 | 2009-09-16 | 富士通株式会社 | 光半導体装置及びその製造方法 |
-
2002
- 2002-12-19 FR FR0216178A patent/FR2849273B1/fr not_active Expired - Fee Related
-
2003
- 2003-12-17 WO PCT/FR2003/050186 patent/WO2004057675A1/fr active Application Filing
- 2003-12-17 EP EP03809998A patent/EP1573821A1/fr not_active Withdrawn
- 2003-12-17 US US10/540,334 patent/US7352043B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4206470A (en) * | 1977-09-01 | 1980-06-03 | Honeywell Inc. | Thin film interconnect for multicolor IR/CCD |
US4514755A (en) * | 1983-07-08 | 1985-04-30 | Fuji Photo Film Co., Ltd. | Solid-state color imager with two layer three story structure |
US5373182A (en) * | 1993-01-12 | 1994-12-13 | Santa Barbara Research Center | Integrated IR and visible detector |
US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
WO1999039372A2 (fr) * | 1998-02-02 | 1999-08-05 | Uniax Corporation | Capteurs d'images fabriques a partir de semi-conducteurs organiques |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004060365A1 (de) * | 2004-12-15 | 2006-06-29 | Austriamicrosystems Ag | Bauelement mit Halbleiterübergang und Verfahren zur Herstellung |
DE102004060365B4 (de) * | 2004-12-15 | 2009-03-19 | Austriamicrosystems Ag | Bauelement mit Halbleiterübergang und Verfahren zur Herstellung |
US7898052B2 (en) | 2004-12-15 | 2011-03-01 | Austriamicrosystems Ag | Component with a semiconductor junction and method for the production thereof |
Also Published As
Publication number | Publication date |
---|---|
US20060038251A1 (en) | 2006-02-23 |
FR2849273B1 (fr) | 2005-10-14 |
FR2849273A1 (fr) | 2004-06-25 |
EP1573821A1 (fr) | 2005-09-14 |
US7352043B2 (en) | 2008-04-01 |
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