WO2004045794A1 - 電解コンデンサ用Nb−Al合金粉末及びその製造方法、並びに電解コンデンサ - Google Patents
電解コンデンサ用Nb−Al合金粉末及びその製造方法、並びに電解コンデンサ Download PDFInfo
- Publication number
- WO2004045794A1 WO2004045794A1 PCT/JP2003/014556 JP0314556W WO2004045794A1 WO 2004045794 A1 WO2004045794 A1 WO 2004045794A1 JP 0314556 W JP0314556 W JP 0314556W WO 2004045794 A1 WO2004045794 A1 WO 2004045794A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alloy powder
- alloy
- powder
- electrolytic capacitor
- mass
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Definitions
- the present invention relates to an Nb-A1 alloy powder for electrolytic capacitors and an electrolytic capacitor using the same.
- the dielectric constant of the oxide is desirably larger than tantalum, the price is lower, and there is no concern about supply stability.
- an anode body having the configuration described in the above document is used.
- the dielectric layer composed of niobium oxide is thermally unstable, and the leakage current characteristics after solder reflow treatment are more likely to deteriorate compared to tantalum capacitors.
- the thermal stability of the alloy oxide film is high in niobium and aluminum alloys by the method shown in Japanese Patent Application Laid-Open No. 60-66806, the concentration of niobium is not sufficiently high.
- the dielectric constant of the oxide film is not sufficiently high, and the ribbon used by the quenching method is used as it is, it is not possible to secure a sufficient specific surface area compared to tantalum powder or niobium powder. Was not suitable, which was an obstacle to its practical use.
- the present invention has been made in view of the above-mentioned problems of the prior art, and has a stable dielectric layer, a large capacitance, and a high withstand voltage electrolytic capacitor.
- b Aims to provide A1 alloy powder.
- the present invention provides a method of increasing the concentration of Nb in order to increase the dielectric constant of the dielectric layer to an oxide, and adding one or more third elements containing Nb-A1 as a basic component.
- An object of the present invention is to provide an Nb-A1 alloy powder for an electrolytic capacitor capable of forming an electrolytic capacitor having a large capacitor capacity and a high withstand voltage.
- Another object of the present invention is to provide an electrolytic capacitor using the Nb-A1 alloy powder for an electrolytic capacitor. Disclosure of the invention
- the present invention has adopted the following configurations.
- Electrolytic N b-A 1 alloy powder capacitor of the present invention is a N b-A 1 alloy powder used as an anode of an electrolytic capacitor by forming a dielectric layer on the surface, N b A l 3, Nb 2 Al, Nb 3 Al, or Nb And Doraito tissue surrounding the dendrite structure, N b A l 3, N b 2 A l, N b 3 A 1, or consists of 2 species selected from N b eutectic-like tissue, or A 1 Ru Tona matrix And characterized in that:
- the Nb-A1 alloy powder of the present invention can be used as a material for producing a metal sintered body used as an anode body of an electrolytic capacitor, such as tantalum. It is possible to use a capacitor material with higher pressure resistance and higher capacity than the primary powder.
- the dielectric layer formed on the surface contains niobium oxide and aluminum oxide, has a high dielectric constant, It is more stable than the dielectric layer of niobium oxide alone, and can reduce the leakage current.
- the Nb—A1 alloy powder of the present invention can easily produce a porous powder having a fine dendrite structure as a main part by removing only the above-mentioned matrix part partially or entirely.
- the aluminum content of the N b-A 1 alloy is 4 6% by weight or more 9 0 wt% or less
- the N b A 1 3 and the main body A configuration having the dendrite structure and an A1 matrix surrounding the periphery of the dendrite structure can be provided.
- the A1 matrix can be easily removed by etching. Therefore, when a porous powder is produced, an alloy powder for a capacitor having a larger surface area can be obtained.
- Electrolytic N b-A 1 alloy powder capacitor of the present invention the aluminum content of the N b-A 1 alloy is less than 2 7 mass% or more 4 6 wt%, the N b A 1 3 and the main body
- the dendrite structure, and N surrounding the dendrite structure b A 1 3 and Nb 2 A 1 Ru can be configured to have a eutectic matrix and.
- Electrolytic Nb- A 1 alloy powder capacitor of the present invention the Nb- aluminum content of A 1 alloy is less than 14 mass% or more 27 wt%, and the dendrite structure that the Nb 2 A 1 as the main body, Ru can be configured to have a eutectic matrix of N b a 1 3 and Nb 2 a 1 surrounding the periphery of the dendrite structure.
- Electrolytic Nb- A 1 alloy powder capacitor of the present invention the Nb- aluminum content of A 1 alloy is less than 1 0% by weight to 14% by weight, and the dendrite structure that the Nb 3 A 1 and the main body Further, a configuration having a matrix composed of a eutectic structure of Nb 3 A 1 and Nb 2 A 1 surrounding the dendrite structure can be adopted.
- Electrolytic Nb_A 1 alloy powder capacitor of the present invention the Nb- A 1 is less than 10% by weight of aluminum content of the alloy, and the-tend light structure mainly of Nb, Nb 3 surrounding the periphery of the dendrite structure It can be configured to have a eutectic matrix of A1 and Nb.
- Nb-A1 alloy powder for an electrolytic capacitor of the present invention one or more elements selected from tantalum, titanium, hafnium, zirconium, molybdenum, barium, strontium, and boron are added to the Nb-A1 alloy. It is also possible to adopt a configuration that has been implemented. The addition of these elements to the Nb-A1 alloy has the effect of significantly improving the non-dielectric constant of the dielectric layer formed on the surface when an electrolytic capacitor is constructed.
- the Nb-A1 alloy powder for an electrolytic capacitor of the present invention preferably has a content of the above-mentioned additional element of 3% by mass or less. If the addition amount exceeds 3% by mass, the dielectric properties of the anodic oxide coating become unstable, and the leakage current increases under high withstand voltage conditions, so that the above effects cannot be obtained.
- the Nb-A1 alloy powder for an electrolytic capacitor of the present invention preferably has a configuration in which the content of iron contained as an impurity in the Nb-A1 alloy is 100 ppm or less. If the content of iron contained as an impurity exceeds 100 ppm, it is not preferable because the withstand pressure of a dielectric layer formed on the surface of the anode body of the electrolytic capacitor is reduced.
- the Nb-A1 alloy powder for an electrolytic capacitor of the present invention has a configuration in which the dendritic interval (thickness) of the fine dendrite structure is 3 m or less.
- the surface area of the powder can be increased, and a large-capacity electrolytic capacitor can be manufactured.
- the matrix is removed by etching to produce a porous powder, the surface area of the powder can be further increased.
- the Nb-A1 alloy powder for electrolytic capacitors of the present invention has a bulk density of 2.
- the specific surface area is preferably set to 1 to 10 m 2 Zg.
- An electrolytic capacitor according to the present invention includes an anode body obtained by sintering the above-described Nb_A1 alloy powder for an electrolytic capacitor according to the present invention. With such a configuration, a small and large-capacity electrolytic capacitor can be provided.
- a method for producing an Nb_A1 alloy powder for an electrolytic capacitor of the present invention is a method for producing an Nb-A1 alloy powder used as an anode body of an electrolytic capacitor by forming a dielectric layer on a surface, Content is 27% by mass or more
- Nb-A1 molten metal of 90 mass% or less is quenched to produce Nb-A1 alloy powder or ribbon having a fine dendrite structure with a tree spacing of 3 zm or less.
- the surface area can be easily increased by performing etching, the matrix or the dendrite phase portion is preferentially etched, and the porous portion in which the dendrite structure remains is formed.
- This The Nb—A1 alloy powder produced in this manner has fine particles and a large surface area, and a high dielectric constant can be obtained when an oxide dielectric layer is formed on the surface. Capacity can be realized.
- the cooling rate in the step of producing the Nb-A1 alloy powder or ribbon by quenching the molten metal is as follows: It is preferable that the temperature be 1 o 3 ° cz seconds or more. By setting the cooling rate within the above range, a fine dendrite structure can be efficiently formed in the powder or the ribbon, and the surface area of the produced Nb-A1 alloy powder can be increased. it can. Moreover, the cooling rate is more preferably the 1 0 4 ° C Bruno seconds or.
- the method for producing an Nb-A1 alloy powder for an electrolytic capacitor of the present invention includes the step of pulverizing the powder or the ribbon by pulverizing the Nb-A1 alloy powder for an electrolytic capacitor. You can also. BEST MODE FOR CARRYING OUT THE INVENTION
- the Nb-A1 alloy powder for an electrolytic capacitor according to the present invention is mainly composed of Nb or Nb-A1 intermetallic compound, and has a fine dendrite structure extending in a dendritic shape, and surrounds the periphery of the dendrite structure. It is characterized by having a matrix composed of Nb—A1 intermetallic compound.
- the Nb-A1 alloy powder according to the present invention is applied to an electrolytic capacitor, it is possible to form an oxide having a large surface area and a high dielectric constant when a dielectric layer is formed on the surface. Therefore, a small and large-capacity electrolytic capacitor can be realized. Further, a fine dendrite structure mainly comprising NbA 1 3, the onset NbA 1 alloy powder Ming electrolytic capacitor having a matrix consisting of Nb 2 A 1 or A 1 surround the fine Dendora I DOO tissue, When used as the anode body of an electrolytic capacitor, the oxide constituting the dielectric layer formed on the particle surface contains niobium oxide and aluminum oxide, and has a higher dielectric constant than aluminum capacitors.
- Nb—A1 alloy powder of the present invention is applied to an electrolytic capacitor, a small-sized and large-capacity electrolytic capacitor can be realized.
- Nb is cheaper than Ta, which is generally used as an electrolytic capacitor at present, and has the advantage that an electrolytic capacitor with the same performance as a Ta capacitor can be manufactured at low cost.
- Nb_A1 alloy powder first, a molten metal of Nb—A1 having a predetermined composition is prepared. In the present production method, any composition can be selected.
- the molten metal is quenched and solidified by an R method (rotating electrode method) or the like to obtain a powder, or a ribbon is formed by a so-called melt spin method. Then, the powder or the ribbon is pulverized using, for example, a ball mill / jet mill to obtain an Nb-A1 alloy powder for an electrolytic capacitor according to the present invention. Further, if the powder or thin strip obtained in the quenching step is subjected to a hydrogenation step to hydrogenate and then subjected to a pulverization step, a finer alloy powder can be obtained.
- the production is performed so that the cooling rate is at least 10 3 ° C / sec (more preferably, at least 1 o 4 ° cz). It is preferable to set conditions. By setting the cooling rate in the above range, a fine dendrite structure can be efficiently formed in the powder or ribbon, and the surface area of the Nb-A1 alloy powder to be produced can be increased. .
- the Nb-A1 alloy powder for an electrolytic capacitor of the present invention having a fine dendrite structure mainly composed of an intermetallic compound and a matrix of an intermetallic compound surrounding the dendrite structure can be produced.
- the Nb—A1 alloy powder for electrolytic capacitors according to the present invention having an aluminum content of 27% by mass or more can increase the surface area of the powder by performing etching and increase the capacity of the capacitor.
- partial matrix surrounding the fine dendrite structure mainly composed of N b A 1 3 by Etsuchin grayed, or by wholly eliminating, powder porous that the dendrite structure and skeletal obtain .
- the matrix of the alloy powder is A1
- the etching is extremely easy, and the A1 matrix is selectively removed by a commonly used etching solution containing hydrochloric acid, nitric acid, etc.
- a porous powder having a dendrite structure as a skeleton can be formed.
- N b A 1 3 fine-tend light structure and N b A 1 3 mainly the N b 2 co Akirajo portion of A 1 coexist a N b A 1 3 parts by hydrofluoric nitric acid By etching, the surface area of the powder can be increased, and an alloy powder capable of forming a large-capacity electrolytic capacitor can be obtained.
- Example 1 shown in Table 1 is an example in which the A1 concentration is 20% or more and 75% by mass%. Among them, the composition in which the A1 concentration is 46% or more and 90% or less by mass%.
- the Nb-A1 alloy powder is the primary crystal NbA It is a mixed structure consisting of the dendrite phase and the A1 matrix structure. Etching with an etchant such as hydrochloric acid or nitric acid etches the A1 matrix phase, resulting in a marked increase in surface area. When applied, the element has a higher CV value than tantalum powder and a higher breakdown voltage than tantalum powder.
- Example 2 Shown in Table 2 [Example 2] is an example of less than 27% or more 46% A 1 concentration of by mass%.
- Quench Atomaizu powder composition of this range with-tend light phase of Nb A 1 3 is a primary crystal a nb a 1 3 and mixed structure consisting of eutectic tissue and Nb 2 a 1, Nb a 1 3 -phase is etched by mixed acid solution of hydrofluoric acid and nitric acid results in significant expansion of Etsuchin grayed by surface area
- this powder is sintered and subjected to chemical treatment, it becomes a device with a larger CV value than tantalum powder and a higher breakdown voltage than tantalum powder.
- Example 3 shown in Table 3 is an example in which the A1 concentration is 14% or more and less than 27% by mass%.
- the quenched atomized powder having a composition in this range has a dendritic phase of Nb 2 A1, which is the primary crystal.
- NbA is 1 3 and Nb 2 a 1 with tissue mixed structure consisting of eutectic of, Nb 2 a 1-phase is etched by mixed acid solution of hydrofluoric acid and nitric acid results in significant expansion of Etsuchin grayed by surface area.
- this powder is sintered and subjected to chemical treatment, it becomes a device with a larger CV value than tantalum powder and a higher breakdown voltage than tantalum powder.
- Example 4 shown in Table 4 is an example in which the A1 concentration is 10% or more and less than 14% by mass%.
- the quenched atomized powder having a composition in this range is a dendrite phase of Nb 3 A1, which is the primary crystal.
- Nb 3 A1 which is the primary crystal.
- obtaining a an Nb 3 a l and Nb 2 mixed structure consisting of eutectic tissue with a l a significantly larger sintered element surface area can be followed by trituration with a hydrogen storage processing into fine powder
- this sintered element has a higher CV value than tantalum powder and a higher breakdown voltage than tantalum powder.
- Example 5 shown in Table 5 is an example in which the A1 concentration is less than 10% by mass%.
- the quenched atomized powder having the composition in this range is composed of the primary crystal Nb dendrite phase, Nb3A1 and Nb. It is a mixed structure consisting of the eutectic structure of, and can be made into fine powder by pulverizing by hydrogen occlusion treatment to obtain a sintered element with a remarkably large surface area.
- the device has a larger CV value than tantalum powder and a higher breakdown voltage than tantalum powder.
- the Nb—A1 alloy powder for an electrolytic capacitor of the present invention is an Nb_A1 alloy powder used as an anode body of an electrolytic capacitor by forming a dielectric layer on the surface.
- selected NbA l 3 Nb 2 a l Nb 3 a l, or a fine dendrite structure mainly composed of Nb enclose take the dendrite structure, NbA l 3 Nb 2 a l Nb 3 a l, or from N b Consists of two types With a structure having a eutectic structure or a matrix composed of A1, extremely fine powder can be obtained.
- the dielectric layer formed on the surface contains niobium oxide and aluminum oxide, has a high dielectric constant, is more stable than the dielectric layer of niobium oxide alone, and has a leakage current. Can also be reduced. Therefore, according to the powder, it is possible to extremely easily produce a sintered body having a higher withstand voltage than a conventional tantalum sintered body and capable of forming a large-capacity electrolytic capacitor.
- a porous powder having a very fine dendrite structure as a skeleton can be produced. Can be greatly expanded, and the capacitance of the capacitor can be improved.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/534,703 US20060114644A1 (en) | 2002-11-18 | 2003-11-17 | Nb-a1 alloy powder for electrolytic capacitors, method for manufacturing nb-a1 alloy powder, and electrolytic capacitor |
BR0316328-8A BR0316328A (pt) | 2002-11-18 | 2003-11-17 | Liga de nb-a1 em pó para capacitores eletrolìticos, capacitor eletrolìtico com ânodo e método para fabricação de uma liga de nb-a1 em pó |
JP2004553175A JPWO2004045794A1 (ja) | 2002-11-18 | 2003-11-17 | 電解コンデンサ用Nb−Al合金粉末及びその製造方法、並びに電解コンデンサ |
EP03772799A EP1568426A1 (en) | 2002-11-18 | 2003-11-17 | Nb-Al ALLOY POWDER AND METHOD FOR ELECTROLYTIC CAPACITOR AND METHOD FOR PREPARATION THEREOF, AND ELECTROLYTIC CAPACITOR |
AU2003280811A AU2003280811A1 (en) | 2002-11-18 | 2003-11-17 | Nb-Al ALLOY POWDER AND METHOD FOR ELECTROLYTIC CAPACITOR AND METHOD FOR PREPARATION THEREOF, AND ELECTROLYTIC CAPACITOR |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002333988 | 2002-11-18 | ||
JP2002-333989 | 2002-11-18 | ||
JP2002333989 | 2002-11-18 | ||
JP2002-333988 | 2002-11-18 |
Publications (1)
Publication Number | Publication Date |
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WO2004045794A1 true WO2004045794A1 (ja) | 2004-06-03 |
Family
ID=32328315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/014556 WO2004045794A1 (ja) | 2002-11-18 | 2003-11-17 | 電解コンデンサ用Nb−Al合金粉末及びその製造方法、並びに電解コンデンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060114644A1 (ja) |
EP (1) | EP1568426A1 (ja) |
JP (1) | JPWO2004045794A1 (ja) |
AU (1) | AU2003280811A1 (ja) |
BR (1) | BR0316328A (ja) |
WO (1) | WO2004045794A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103567407A (zh) * | 2013-10-25 | 2014-02-12 | 西部超导材料科技股份有限公司 | Nb3Al超导材料的制备方法 |
WO2014104178A1 (ja) | 2012-12-27 | 2014-07-03 | 昭和電工株式会社 | ニオブコンデンサ陽極用化成体及びその製造方法 |
WO2020075733A1 (ja) * | 2018-10-12 | 2020-04-16 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材の製造方法 |
WO2022196117A1 (ja) * | 2021-03-17 | 2022-09-22 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材及びその製造方法 |
TWI837192B (zh) | 2018-10-12 | 2024-04-01 | 日商東洋鋁股份有限公司 | 鋁電解電容器用電極材料的製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060135831A (ko) * | 2004-03-24 | 2006-12-29 | 쇼와 덴코 가부시키가이샤 | 콘덴서용 전극 시트, 그의 제조 방법 및 전해 콘덴서 |
CN113600812B (zh) * | 2021-08-26 | 2022-08-19 | 上海交通大学 | 金属粉末及其制备方法、金属合金及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3564348A (en) * | 1969-04-07 | 1971-02-16 | Sprague Electric Co | Titanium-antimony alloy electrode electrical capacitor |
JPS6066806A (ja) * | 1983-09-22 | 1985-04-17 | ニチコン株式会社 | 電解コンデンサ用アルミニウム合金電極 |
JPH01124212A (ja) * | 1987-11-09 | 1989-05-17 | Nichicon Corp | 電解コンデンサ用アルミニウム合金電極 |
JPH0653087A (ja) * | 1992-07-27 | 1994-02-25 | Nippon Steel Corp | コンデンサ用電極材料の製造方法 |
-
2003
- 2003-11-17 BR BR0316328-8A patent/BR0316328A/pt not_active IP Right Cessation
- 2003-11-17 AU AU2003280811A patent/AU2003280811A1/en not_active Abandoned
- 2003-11-17 EP EP03772799A patent/EP1568426A1/en not_active Withdrawn
- 2003-11-17 WO PCT/JP2003/014556 patent/WO2004045794A1/ja not_active Application Discontinuation
- 2003-11-17 JP JP2004553175A patent/JPWO2004045794A1/ja active Pending
- 2003-11-17 US US10/534,703 patent/US20060114644A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3564348A (en) * | 1969-04-07 | 1971-02-16 | Sprague Electric Co | Titanium-antimony alloy electrode electrical capacitor |
JPS6066806A (ja) * | 1983-09-22 | 1985-04-17 | ニチコン株式会社 | 電解コンデンサ用アルミニウム合金電極 |
JPH01124212A (ja) * | 1987-11-09 | 1989-05-17 | Nichicon Corp | 電解コンデンサ用アルミニウム合金電極 |
JPH0653087A (ja) * | 1992-07-27 | 1994-02-25 | Nippon Steel Corp | コンデンサ用電極材料の製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014104178A1 (ja) | 2012-12-27 | 2014-07-03 | 昭和電工株式会社 | ニオブコンデンサ陽極用化成体及びその製造方法 |
JPWO2014104178A1 (ja) * | 2012-12-27 | 2017-01-12 | 昭和電工株式会社 | ニオブコンデンサ陽極用化成体及びその製造方法 |
CN103567407A (zh) * | 2013-10-25 | 2014-02-12 | 西部超导材料科技股份有限公司 | Nb3Al超导材料的制备方法 |
WO2020075733A1 (ja) * | 2018-10-12 | 2020-04-16 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材の製造方法 |
JP7317852B2 (ja) | 2018-10-12 | 2023-07-31 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材の製造方法 |
TWI837192B (zh) | 2018-10-12 | 2024-04-01 | 日商東洋鋁股份有限公司 | 鋁電解電容器用電極材料的製造方法 |
WO2022196117A1 (ja) * | 2021-03-17 | 2022-09-22 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
AU2003280811A1 (en) | 2004-06-15 |
EP1568426A1 (en) | 2005-08-31 |
BR0316328A (pt) | 2005-09-27 |
US20060114644A1 (en) | 2006-06-01 |
JPWO2004045794A1 (ja) | 2006-03-16 |
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