WO2004044971A1 - Method and device for polishing plasma chamber cathode holes - Google Patents
Method and device for polishing plasma chamber cathode holes Download PDFInfo
- Publication number
- WO2004044971A1 WO2004044971A1 PCT/KR2002/002093 KR0202093W WO2004044971A1 WO 2004044971 A1 WO2004044971 A1 WO 2004044971A1 KR 0202093 W KR0202093 W KR 0202093W WO 2004044971 A1 WO2004044971 A1 WO 2004044971A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cathode
- jetter
- holes
- polishing
- jet nozzles
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
- B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
- B08B9/0323—Arrangements specially designed for simultaneous and parallel cleaning of a plurality of conduits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the present invention relates generally to the plasma chamber
- semiconductor etching is generally made of a silicon plated 0) of a
- the cathode is made by the following procedure: A silicon
- Abrasives are supplied to both the drilling plate and the silicon plate,
- ultrasonic drilling technology is a new method completely different from
- the invention injected the polishing solution and air with a
- the invention is expected
- Fig. 1 is a block diagram and a cross section depicting the ordinary cathode.
- Fig. 2 is a cross section depicting gas injection through the
- Fig. 3 is a cross section depicting the cathode combined with
- Fig. 4 is a block diagram depicting the cathode hole processing
- Fig. 5 is a partial cross section depicting the jetter (30) of the
- Fig. 6 is an enlarged photograph depicting the cathode hole
- Fig. 7 is an enlarged photograph depicting the cathode hole
- cathode 21 cathode hole 30: jetter
- jet nozzle 32 cover 40: main body 50: compressor 60: pump 70: tank
- Fig. 1 is a block diagram and a cross section depicting the
- Fig. 2 is a cross section depicting gas injection
- Fig. 3 is a cross section of
- Fig. 4 is a block diagram of a cathode hole processing
- Fig. 5 is a partial
- hole polishing method and device is as follows.
- the drilling machine is fixed on the jetter (30), with jet nozzles (31 ) on it, of the hole processing device using jigs, which is larger than the
- the jig is made from an abrasion-proof metal material
- the jigs are stuck fast to
- body cover is made to secure the cathode by pressing the jigs and
- jet nozzles (31 ) on each jetter (30) are linked to the compressor
- the upper side of the jetter (30) is connected with a transparent cover and an outer tank (The drawing is omitted.), on the lower part of
- the cathode is put on the upper side of the jetter (30) with
- the polishing solution is the
- polisher is chosen in the last processing as illustrated in Fig. 6.
- SIC powder particles flowed into the tank(70) in the final stage is as minute as upwards of 6000 meshes.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2002/002093 WO2004044971A1 (en) | 2002-11-09 | 2002-11-09 | Method and device for polishing plasma chamber cathode holes |
AU2002353591A AU2002353591A1 (en) | 2002-11-09 | 2002-11-09 | Method and device for polishing plasma chamber cathode holes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2002/002093 WO2004044971A1 (en) | 2002-11-09 | 2002-11-09 | Method and device for polishing plasma chamber cathode holes |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004044971A1 true WO2004044971A1 (en) | 2004-05-27 |
Family
ID=32310794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2002/002093 WO2004044971A1 (en) | 2002-11-09 | 2002-11-09 | Method and device for polishing plasma chamber cathode holes |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2002353591A1 (en) |
WO (1) | WO2004044971A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021134891A1 (en) * | 2019-12-31 | 2021-07-08 | 江苏鲁汶仪器有限公司 | Ceramic air inlet radio frequency connection type cleaning device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6086299A (en) * | 1983-10-14 | 1985-05-15 | Yaskawa Electric Mfg Co Ltd | Electrolytic polishing cell |
JPS63160233A (en) * | 1986-12-23 | 1988-07-04 | Hitachi Cable Ltd | Cleaning method for mirror wafer |
US6150762A (en) * | 1998-01-26 | 2000-11-21 | Samsung Electronics Co., Ltd. | Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby |
-
2002
- 2002-11-09 WO PCT/KR2002/002093 patent/WO2004044971A1/en not_active Application Discontinuation
- 2002-11-09 AU AU2002353591A patent/AU2002353591A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6086299A (en) * | 1983-10-14 | 1985-05-15 | Yaskawa Electric Mfg Co Ltd | Electrolytic polishing cell |
JPS63160233A (en) * | 1986-12-23 | 1988-07-04 | Hitachi Cable Ltd | Cleaning method for mirror wafer |
US6150762A (en) * | 1998-01-26 | 2000-11-21 | Samsung Electronics Co., Ltd. | Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021134891A1 (en) * | 2019-12-31 | 2021-07-08 | 江苏鲁汶仪器有限公司 | Ceramic air inlet radio frequency connection type cleaning device |
Also Published As
Publication number | Publication date |
---|---|
AU2002353591A1 (en) | 2004-06-03 |
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