WO2004038433A1 - シート状コネクターおよびその製造方法並びにその応用 - Google Patents
シート状コネクターおよびその製造方法並びにその応用 Download PDFInfo
- Publication number
- WO2004038433A1 WO2004038433A1 PCT/JP2003/013618 JP0313618W WO2004038433A1 WO 2004038433 A1 WO2004038433 A1 WO 2004038433A1 JP 0313618 W JP0313618 W JP 0313618W WO 2004038433 A1 WO2004038433 A1 WO 2004038433A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sheet
- electrode
- metal layer
- insulating sheet
- connector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06733—Geometry aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
- H01R12/523—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures by an interconnection through aligned holes in the boards or multilayer board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
- H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0367—Metallic bump or raised conductor not used as solder bump
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09436—Pads or lands on permanent coating which covers the other conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09481—Via in pad; Pad over filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Definitions
- Sheet-like connector manufacturing method thereof and application thereof
- the present invention relates to a sheet-like connector suitable as a probe device for making an electrical connection to a circuit, for example, in electrical inspection of a circuit such as an integrated circuit, and a method of manufacturing the same and its application.
- the devices are arranged according to the pattern corresponding to the pattern of the test electrode of the test circuit device.
- An inspection probe having an inspection electrode is used.
- a test probe conventionally, a test in which pins or blades are arranged is used.
- the inspection probe for inspecting the wafer should be arranged with a large number of inspection electrodes. Therefore, the inspection probe is extremely expensive, and it is difficult to find the inspection probe itself when the pitch of the test electrode is small ⁇ . Furthermore, since the wafer generally warps, and the state of the warp also differs depending on the product (wafer), each of the inspection electrodes of the inspection probe is used for the many inspection electrodes in the Ueno. It is practically difficult to make a stable, strong, steady turn.
- FIG. 49 is an explanatory cross-sectional view showing a configuration of an example of a conventional circuit inspection probe including an inspection circuit 3 ⁇ 4 and an anisotropic conductive sheet / sheet-like connector.
- an inspection circuit 85 having an inspection electrode 86 formed on one surface according to a pattern corresponding to the pattern of the inspected electrode of the inspected circuit device is provided.
- a sheet-like connector 90 is disposed on one surface of the circuit board 85 with an anisotropic conductive sheet 80 interposed therebetween.
- the anisotropic conductive sheet 80 exhibits conductivity only in the thickness direction, or exhibits conductivity only in the thickness direction when pressurized in the thickness direction.
- the anisotropic conductive sheet 80 has a conductive conductive portion.
- anisotropically conductive sheets those of various structures are known.
- anisotropically conductive sheets obtained by uniformly dispersing metal particles in an elastomer are preferable.
- this is referred to as a “dispersion type anisotropically conductive sheet”.
- the thickness of the conductive magnetic material particles is unevenly distributed in one elastomer.
- an anisotropic conductive sheet (hereinafter referred to as a "distributed anisotropic conductive sheet") in which a large number of conductive parts extending in a direction and an insulating part insulating these from each other are formed.
- a distributed anisotropic conductive sheet in which a large number of conductive parts extending in a direction and an insulating part insulating these from each other are formed.
- Step uneven distribution type anisotropically conductive sheet formed is disclosed between the surface of the insulating portion.
- the sheet-like connector 90 has, for example, a flexible fe bond sheet 91 made of resin, and the insulating sheet 91 has a plurality of electrode structures 95 extending in the thickness direction 95 force S test circuit It is arranged and configured according to the pattern corresponding to the pattern of the inspection electrode of the device.
- Each of the electrode structures 95 has a projecting surface electrode portion 96 exposed on the surface of the insulating sheet 91, and a plate-like back surface electrode portion 97 exposed on the back surface of the insulating sheet 91.
- the insulating sheet 91 is connected integrally via a short circuit portion 98 extending through the insulating sheet 91 in the thickness direction.
- Such a sheet-like connector 90 is generally manufactured as follows.
- a laminate 9 OA having a metal layer 92 formed on one side of a green sheet 91 is prepared, as shown in FIG. 50 (b).
- a through hole 9 8 H is formed in the insulating sheet 91 in the thickness direction.
- a resist film 93 is formed on the metal layer 92 of the insulating sheet 91, and then the metal layer 92 is subjected to plating treatment using the common electrode as a common electrode.
- the inside of the through hole 9 8 H of the insulating sheet 9 1 is filled with a metal deposit, and is integrally connected to the metal layer 9 2.
- a short circuit portion 98 is formed, and a projection-like surface electrode portion 96 is integrally formed on the surface of the permanent sheet 91 so as to be integrally connected to the surface 98.
- the resist film 93 is removed from the metal layer 92, and as shown in FIG. 50 (d), a resist film 94A is formed on the surface of the insulating sheet 91 including the surface electrode portion 96. Then, a resist film 94 B is formed on the metal layer 92 in accordance with the pattern corresponding to the pattern of the back electrode portion to be formed, and the metal layer 92 is etched. As shown in 5 0 (e), the exposed portion of the metal layer 92 is removed to form a back electrode portion 97 with a force S, whereby a structure 95 is formed.
- the resist film 94 A formed on the insulating sheet 91 and the surface electrode portion 96 is removed, and the resist film 94 B formed on the back electrode portion 97 is removed.
- the sheet-like connector 90 is obtained.
- the surface electrode portion 96 of the electrode structure 95 in the sheet-like connector 90 is positioned on the test electrode of the wafer on the surface of the circuit device to be inspected, for example, the wafer.
- the wafer is pressed by the inspection probe in this state, so that the back surface electrode portion 97 of the electrode assembly 95 in the anisotropic conductive sheet 80 is used.
- a conductive path is formed in the thickness direction between the back electrode portion 97 and the inspection electrode 86 of the inspection circuit 85 in the anisotropic conductive sheet 80.
- the electrical connection between the inspection electrode of the wafer and the inspection electrode 86 of the circuit for inspection 5 is achieved. Then, in this state, the required electrical inspection is performed on the wafer.
- the anisotropic conductive sheet is deformed according to the size of the warpage of the wafer, and thus, many in the wafer Good electrical connection can be reliably achieved for each of the 3 ⁇ 4 ⁇ electrodes.
- the plating layer by electrolytic plating grows isotropically, it is obtained as shown in FIG. 51.
- the distance w from the periphery of the front surface electrode portion 96 to the periphery of 9 8 has a size equal to the height h of the front surface electrode portion 96. Therefore, the diameter R of the obtained surface electrode portion 96 becomes considerably larger than twice the protrusion height h. . Therefore, in order to arrange the test electrodes in the circuit device to be tested at a very small pitch, it is not possible to secure a sufficient separation distance between the adjacent structures 95. In the sheet-like connector obtained, the flexibility of the insulating sheet 91 is lost, which makes it difficult to achieve a stable electrical connection to the circuit device under test.
- the insulating sheet 9 is provided. Since the growth rate of the plating layer differs for each through hole 9 8 H of 1), the protrusion height h of the surface electrode portion 96 to be formed, the edge from the surface electrode portion 96 to the edge of the short ridge portion 9 8 Distance w, ie diameter; Then, there is a large fluctuation in the projection height h of the surface electrode portion 96. It becomes difficult to make stable electrical connection to the circuit device under test because ⁇ makes a large variation in the diameter of the surface electrode portion 96. There is a risk that adjacent surface electrode parts 96 will short-circuit with each other.
- the sheet-like connector obtained by the former method may be used. In the latter method, it is difficult to form a short circuit 98 and a surface electrode 96 by electrolytic plating. It becomes difficult itself.
- the sheet-like connector described in the following prior art reference 5 is manufactured as follows. As shown in FIG. 5 2 (a), a resist film 9 3 A and a front side metal layer 9 2 A are formed in this order on the surface of the insulating sheet 9 1. A laminated body 90 B in which the metal layer 92 B is laminated is prepared, and as shown in FIG. 5 2 (b), the back side metal layer 92 B in the laminated body 90 B, the insulating sheet 9 By forming through holes extending in the thickness direction communicating with each other in each of 1 and the resist film 93 A, it is formed on the back surface of the corresponding layer 9 0 B.
- the surface-side metal layer 92 A in this laminate 90 B is metallized as an electrode to form a metal in the recess 90 0 K for forming the electrical conductive structure.
- the back surface side metal layer in this laminate is subjected to etching treatment to remove a part thereof, thereby forming a back surface ⁇ portion 79 as shown in FIG. 5 2 (d), thereby forming a sheet-like connector. Can be obtained.
- the sheet-like connector 1 described in the following prior art reference 6 is manufactured as follows.
- the surface-side metal layer 92 A is formed on the surface of the insulating sheet material 91 A having a thickness larger than that of the insulating sheet in the sheet-like connector to be formed.
- An electrode structure forming recess 90 K having a tapered form adapted to the short plate B of the electric structure to be formed and the surface electrode portion is formed.
- the surface-side metal layer 92 A in the laminate 9 OC is treated with metal as an electrode to fill the recess 90 K for forming the electrode structure with metal as shown in FIG. 5 3 (c).
- the surface electrode part 96 and short total 98 are formed.
- the surface-side metal layer 92 A in the laminate 90 C is removed, and the insulating sheet material 91 A is etched to remove the surface-side portion of the insulating sheet.
- the insulating sheet 91 of the required thickness is formed, and the surface electrode portion 96 is exposed.
- the back surface side metal layer 92 B is etched to form a back surface electrode portion, whereby a sheet-like connector is obtained.
- the surface electrode portion is tapered, the distance between the surface electrode portion having a small diameter and the height of projection and the surface electrode portion of the electrical structure that forms the ridge is different. It can be formed in a state in which the distance is sufficiently secured, and the surface electrode parts of the respective structures are formed as cavities for forming the electrode structure formed in the laminated body, so that the surface is formed. A structure with small unevenness in the protruding height of the electrode portion can be obtained.
- the surface electrode in the electrode structure is Since the diameter of the part is equal to or smaller than the diameter of the short & half diameter, that is, the diameter of the through hole formed in the insulating sheet, the electrode body is detached from the back surface of the insulating sheet. Practical use of the connector is difficult.
- the present invention has been made based on the above circumstances, and the first object of the present invention is to make it possible to form an electrode structure having a small diameter surface electrode portion, and to form a small pitch at a small pitch.
- a stable electrical connection can be reliably achieved even for the circuit device in which the ® is formed, and in addition, the electrical structure does not fall off the insulating sheet and high durability can be obtained.
- the sheet-like connector is to 3 ⁇ 4 ⁇ .
- a second object of the present invention is to provide a circuit device in which an electrode structure having a small diameter and a small protrusion height and a surface electrode portion can be formed and the electrodes are formed at a small pitch.
- a third object of the present invention is to provide a circuit inspection probe provided with the above sheet-like connector.
- a fourth object of the present invention is to provide an inspection apparatus of a circuit device provided with the above-mentioned circuit inspection probe.
- the sheet-like connector according to the present invention comprises: an insulating sheet; and a plurality of electric conductors extending in the thickness direction of the insulating sheet, which are disposed on the insulating sheet so as to be mutually separated in the surface direction.
- Each of the self-assembly structures is exposed on the surface of the insulating sheet, and the surface of the thermal sheet
- the insulating sheet is continuously extended from the proximal end of the front surface electrode portion, the rear surface electrode portion exposed on the rear surface of the insulating sheet, and the rear surface electrode portion exposed on the rear surface of the insulating sheet. It is characterized by comprising: a portion connected to the electrode portion; and a holding portion continuously extending from the base end portion of the surface @ portion along the surface of the insulating sheet.
- the surface electrode portion in the electrode structure has a shape that becomes / J from its proximal end to its distal end.
- the ratio R 2 / R i of the diameter R 2 of the tip of the surface electrode portion to the diameter 1 ⁇ of the base end of the surface electrode portion in the electrode structure is 0.11 to 0.55. .
- the value hZR of the ratio hZR of the projection height h of the surface electrode portion to the diameter of the proximal end of the surface electrode portion in the electrode structure is 0.2 to 3.
- the short circuit portion in the electrode structure may have a shape that decreases in diameter from the back surface to the front surface of the insulating sheet.
- the insulating sheet is preferably made of an etchable polymer material, and particularly preferably made of polyimide.
- the method for producing a sheet-like connector according to the present invention is a method for producing a sheet-like connector as described above,
- an electrical structure is formed on the back surface of the layer.
- the laminate is plated using the second surface-side metal layer as an electrode, and the metal-forming recess is filled with metal, whereby a surface electrode portion protruding from the surface of the insulating sheet and Forming a short circuit portion extending continuously from the base end through the insulating sheet in the thickness direction,
- the surface electrode portion's first surface side metal layer is exposed, and then the first surface concerned.
- the tin self-insulation property is continuous from the proximal end of the t & f self-surface portion. It is to be understood that the step of forming the retention portion extending outwardly along the surface of the sheet is included.
- the through hole of the insulating layer in the recess for forming the electrode structure is formed in a shape that becomes /> ⁇ as it goes from the back surface to the surface of the fe layer. Is preferred.
- a laminate made of a polymer material that can be etched away is used as the laminate, and the through holes of the insulating layer in the recess for forming the electrode structure are formed by etching. Is preferred.
- the shape of the through hole of the insulating sheet in the recess for forming the electrode structure is / J as it goes from the back surface to the front surface of the insulating sheet.
- it is formed in
- the laminate of the insulating sheet is made of a polymeric material that can be etched, and the through holes of the insulating sheet in the recess for forming the electrode structure are formed by etching.
- the through holes of the insulating sheet in the recess for forming the electrode structure are formed by etching.
- the laminate of the insulating sheet is made of a polymeric material that can be etched, and the through holes of the insulating sheet in the recess for forming the electrode structure are formed by etching.
- the method for producing a sheet-like connector according to the present invention is a method for producing a sheet-like connector as described above,
- At least an insulating sheet, a surface-side metal layer formed of the surface of the insulating sheet, an insulating layer formed on the surface of the surface-side metal layer, and a back surface formed on the back surface of the tfjf self-insulating sheet Prepare a laminate having a side metal layer,
- the laminated body is metallized using the back side metal layer as an electrode to fill the recess for forming the electrode structure with a metal, whereby the surface electrode portion protruding from the surface of the fe bond sheet and the base thereof are provided.
- the insulating sheet is penetrated in the thickness direction to form a short, and the insulating layer is removed from the laminate to expose the surface portion and the surface side metal layer, Thereafter, the surface-side metal layer is etched to form a holding portion extending continuously along the surface of the insulating sheet from the base end portion of the self-surface electrode portion. It is characterized by
- the probe for circuit inspection of the present invention is designed to electrically connect a circuit device to be inspected with a tester.
- the circuit inspection probe according to the present invention which comprises the above-mentioned sheet-like connector disposed on a raw connector, is an integrated circuit in which the circuit device to be inspected is a large number of integrated circuits.
- the anisotropic conductive connector 1 is formed in the electrode area where the test electrode is disposed in all the integrated circuits or some integrated circuits formed on the wafer which is the inspection cell. It is preferable to have a frame plate in which a plurality of openings are formed correspondingly, and an anisotropic conductive sheet arranged to close each opening of the frame plate.
- An inspection apparatus for a circuit device preferably includes the above-described circuit inspection probe.
- the electrode structure is formed with the holding portion continuously extending from the proximal end portion of the surface electrode portion along the surface of the sm sheet, the holding portion is formed. Even if the diameter of the surface electrode portion is small, the structure does not fall off the insulating sheet, and high durability can be obtained.
- a recess for forming an electrode structure is formed in advance in a laminate having an insulating sheet, and a surface electrode portion is formed by using the recess for forming the electrode structure as a cavity.
- a surface with a small diameter and a small protrusion height can be obtained.
- the holding portion extending outward along the surface of the insulating sheet continuously from the proximal end portion of the surface electrode portion can be reliably obtained. Since the electrode structure can be formed, even if the diameter of the surface electrode portion is small, the electrode structure does not fall off from the insulating sheet, and a sheet-like connector having high durability is obtained.
- the circuit inspection probe of the present invention since the above sheet-like connector is provided, stable electrical connection can be reliably achieved even for a circuit device in which electrodes are formed at a small pitch. High strength can be obtained because the steel structure in the sheet-like connector does not fall off.
- the inspection apparatus for a circuit device of the present invention since the above-described probe for circuit inspection is provided, stable electrical connection can be reliably achieved even for a circuit device in which electrodes are formed at a small pitch. In addition, even if it is possible to inspect the circuit devices, it is possible to obtain reliable inspection over a long period of time.
- FIG. 1 is an explanatory cross-sectional view showing a configuration of a first example of a sheet-like connector according to the present invention.
- FIG. 2 is an explanatory cross-sectional view showing the electrode structure of the sheet-like connector of the first example in an enlarged manner.
- FIG. 3 is a cross-sectional view showing the configuration of a laminate for producing the sheet-like connector of the first example.
- FIG. 4 is a cross-sectional view for illustrating a state in which a resist film for etching is formed on both sides of the laminated body shown in FIG.
- FIG. 5 is an explanatory cross-sectional view showing a state in which a through hole is formed in the back surface side metal layer in the laminate.
- FIG. 6 is an explanatory cross-sectional view showing a state in which through holes are formed in the insulating sheet in the laminate.
- FIG. 7 is a cross-sectional view for explanation showing a state in which a through hole is formed in the first surface side metal layer in the laminate.
- FIG. 8 is a cross-sectional view for illustrating a state in which a through hole is formed in the weir layer of the laminate to form a recess for forming a leakproof structure.
- FIG. 9 is a cross-sectional view showing a state in which a resist film for plating is formed on both sides of a laminate in which a recess for forming an electrode structure is formed.
- FIG. Lo is a cross-sectional view for illustrating a state in which a metal is filled in a recess for forming a structure to form a surface electrode portion and a short groove & ⁇ .
- FIG. 11 is a cross-sectional view for illustrating a state in which a resist film is formed on the surface of the back surface electrode portion.
- FIG. 12 is a cross sectional view in which a plurality of back surface electrode portions separated from each other are formed.
- FIG. 6 is an explanatory cross-sectional view showing the state.
- FIG. 13 is a cross-sectional view showing the state in which the insulating layer has been removed from the laminate.
- FIG. 14 is a cross-sectional view showing a state in which a resist film for etching is formed on the surface of the first surface side metal layer and the surface electrode portion.
- FIG. 15 is a cross-sectional view for illustrating a state in which the first surface-side metal layer is etched to form a holding portion.
- FIG. 16 is an explanatory sectional view showing a configuration of a second example of the sheet-like connector according to the present invention.
- FIG. 17 is an explanatory sectional view showing a laminate for producing the sheet-like connector of the first example.
- FIG. 18 is a cross-sectional view for illustrating a state in which a through hole is formed in the insulating layer in the laminated body shown in FIG. 17.
- FIG. 19 is an explanatory sectional view showing a state in which a through hole is formed in the surface-side metal layer in the laminate.
- FIG. 20 is a cross-sectional view for illustrating a state in which a through hole is formed in the insulating sheet in the laminate and a recess for forming an electrode structure is formed.
- FIG. 21 is a cross-sectional view for illustrating a state in which a metal is filled in a recess for forming an electrode structure to form a surface electrode conductor and a short line ⁇ .
- FIG. 22 is a cross-sectional view for illustrating a state in which insulation is removed from the laminate.
- FIG. 23 is a cross-sectional view showing a state in which a resist film for etching is formed on the surface of the surface-side metal layer and the surface electrode conductor.
- FIG. 24 is a cross-sectional view for illustrating a state in which the surface-side metal layer is etched to form a holding portion.
- Fig. 25 shows the condition that the surface conductor is formed by etching the surface conductor. It is sectional drawing for description which shows.
- the resist film for etching is formed on the surface of the back side metal layer, and the resist film for etching is formed on the surface of the insulating sheet, the surface part and the supporting part. It is a sectional view for explanation shown.
- 2 7 is an explanatory sectional view showing a state in which the back electrode portion back side metal layer is removed is formed.
- FIG. 28 is an explanatory cross-sectional view showing a configuration of a third example of the sheet-like connector according to the present invention.
- FIG. 29 is an explanatory cross-sectional view showing the configuration of a laminate for producing a sheet-like connector according to a third example.
- FIG. 30 is a cross-sectional view showing a process of forming a recess for forming an electrode structure in the laminate shown in FIG.
- FIG. 31 is a cross-sectional view for illustrating a state in which a resist film for plating is formed on both sides of a laminate in which a recess for structure formation is formed.
- FIG. 32 is an explanatory cross-sectional view showing a state in which a metal-filled recess for forming an electrode structure is filled.
- FIG. 33 is a cross-sectional view for illustrating a state in which a resist film for etching is formed on the surface of each of the second surface side metal layer and the back surface electrode portion and the surface side metal layer.
- FIG. 34 is a cross-sectional view for illustrating a state in which the second surface-side metal layer is etched to form a surface electrode conductor having a tip portion protruding from the central portion.
- FIG. 35 is an explanatory sectional view showing a state in which a resist film for etching is formed on the surfaces of the first surface side metal layer and the surface electrode portion conductor.
- FIG. 36 is a cross-sectional view for illustrating a state in which the first surface-side metal layer is etched to form a holding portion.
- FIG. 37 is a cross-sectional view for illustrating the state in which the surface electrode portion is formed by electrolytic etching of the surface electrode portion conductor.
- Fig. 38 shows a state in which a resist film for etching is formed on the surface of the back surface ⁇ portion and a resist film for etching is formed on the surface of the insulating f sheet, the surface electrode portion and the supporting portion ⁇ ⁇ ⁇ 3 ⁇ 4 FIG.
- FIG. 39 shows a state in which the back side metal layer has been removed to form back electrode parts separated from each other. It is a sectional view for explanation.
- FIG. 40 is a cross-sectional view for illustrating the configuration of a fourth example of the sheet-like connector according to the present invention.
- FIG. 41 is a cross-sectional view for illustrating the configuration of an example of the inspection apparatus for a circuit device according to the present invention.
- FIG. 42 is a cross-sectional view for explaining the probe for circuit inspection in the inspection apparatus shown in FIG. 41 in an enlarged manner.
- FIG. 43 is a plan view of the anisotropic conductive 'I raw connector in the circuit inspection probe shown in FIG.
- FIG. 44 is a plan view showing the test wafer produced in the example.
- FIG. 45 is an explanatory view showing the position of the electrode region to be inspected of the integrated circuit formed on the test wafer shown in FIG.
- FIG. 46 is a diagram showing the layout pattern of the test electrodes of the integrated circuit formed on the test wafer shown in FIG.
- FIG. 47 is a plan view showing a frame plate in the anisotropic conductive connector according to the embodiment.
- FIG. 48 is an explanatory view showing a part of the frame plate shown in FIG. 47 in an enlarged manner.
- FIG. 49 is a cross-sectional view for illustrating the configuration of an example of a conventional circuit inspection probe.
- FIG. 50 is an explanatory sectional view showing an example of manufacturing a conventional sheet-like connector.
- FIG. 51 is an explanatory side view showing an enlarged sheet-like connector in the circuit inspection probe shown in FIG.
- FIG. 52 is a cross-sectional view for explaining another manufacturing example of the conventional sheet-like connector.
- FIG. 53 is an explanatory cross-sectional view showing still another manufacturing example of the conventional sheet-like connector.
- FIG. 1 is a cross-sectional view showing the configuration of a first example of a sheet-like connector according to the present invention.
- FIG. 2 is a cross-sectional view for explaining the electrode structure in the sheet-like connector of the first example in an enlarged manner.
- the sheet-like connector 10 of this first example is used for a probe for conducting an electrical inspection of a circuit device, and has a flexible insulating sheet 11 and this insulating sheet 1 In accordance with the pattern corresponding to the pattern of the electrode to be inspected of the circuit device, which is a plurality of electrode structures 15 made of metal extending in the thickness direction of the insulating sheet 11, in 1
- the sheet 11 is disposed in a mutually spaced-apart manner in the surface direction of the sheet.
- Each of the electrode structures 15 is exposed on the surface of the insulating sheet 1 1, and is exposed on the back surface of the insulating sheet 1 1 and a projecting surface electrode portion 16 projecting from the surface of the insulating sheet 1 1.
- the insulating sheet 11 is continuously extended from the base end of the rectangular flat plate-like back electrode 17 and the base end of the front electrode 16 in the thickness direction thereof and connected to the back electrode 17. Short!
- the short-circuited portion continuous to the base end of the surface electrode portion 16 concerned 8 force insulating sheet 1 sheet 1 is tapered from the other surface toward the one surface, and the whole is formed in a truncated cone shape
- the diameter S of the proximal end of the surface electrode portion 16 is the same as the diameter 3 of one end of the short portion 18 continuous with the proximal end.
- the insulating insulating green sheet 11 is not particularly limited as long as it is flexible and has an insulating property, and for example, a resin effect sheet made of polyimide resin, liquid crystal polymer, polyester, fluorine resin, etc., » It is possible to use a sheet or the like impregnated with the above resin in a woven cloth, but etching is possible in that the through holes for forming the short circuit portion 18 can be easily formed by etching. It is preferable to be made of any of the above materials, and in particular, polyimide is preferable.
- the thickness d of the insulating sheet 11 is not particularly limited as long as the insulating sheet 11 is flexible, but it is preferably 10-5, more preferably 10-25. It is m.
- the metal constituting the electrode structure 15 may be nickel, copper, gold, silver, noridium, iron or the like, and the m @ structure 15 may be a single metal as a whole. Even if it is an alloy of two or more metals or a laminate of two or more metals. It may be connected.
- gold, silver, and palladium are used to prevent oxidation of the electrode portion and obtain an electrode portion with low resistance.
- a chemically stable, highly conductive metal alloy, such as hum, may be formed.
- the ratio of the diameter R 2 of the tip to the diameter 1 ⁇ at the proximal end of the surface portion 1 6 is 0.1 to 0/1. It forces S preferably 5 5, more Preferably, it is from 0.15 to 0.4.
- the diameter 1 ⁇ of the base end of the surface electrode portion 16 is preferably 30 to 70%, more preferably 35 to 60% of the pitch of the electrode structure 15 concerned.
- the ratio liZR i of the projection height h to the diameter at the proximal end of the surface ⁇ portion 16 is preferably 0.2 to 0.8, and more preferably 0.5 to 0.6. By satisfying such conditions, even if the circuit device to be connected has small pitches and has minute electrodes, the electrode structure 15 having a pattern corresponding to the pattern of the electrodes can be easily formed. Stable electrical connection to the circuit device can be obtained more reliably.
- the diameter of the base end of the surface electrode portion 16 is set in consideration of the above conditions and the diameter of the electrode to be connected, and is, for example, 30 to 80 ⁇ , preferably 30 to 5. is there.
- the height of the projection height h of the surface electrode portion 16 is preferably 15 to 50 ⁇ in that stable electrical connection can be achieved with respect to the wire to be connected. More preferably, it is 15 to 30 m.
- ⁇ gR 5 of the back surface 17 is larger than the diameter R 4 of the other end of the short 3 ⁇ 4 ⁇ 4 1 8 connected to the back surface electrode 17, and smaller than the pitch of the electrically conductive structure 15 Although it is sufficient, it is preferable to be as large as possible, whereby it is possible to reliably achieve stable electrical connection to, for example, the anisotropically conductive sheet.
- the thickness D 2 of the back electrode portion 17 is preferably 10 to 40 zm, more preferably 15 to 3 in that the strength is sufficiently high and excellent repeated durability is obtained.
- the ratio of the diameter R 3 of one end to the diameter R 4 of the other end of the short total 18 is 5 ⁇ R 3 / R 4 is preferably 0.4 to 5 It is preferably 1, and more preferably from 0.7 to 0.9.
- the diameter R 3 of one end of the short circuit portion 1 8 3 0-7 0% der Rukoto the pitch of the electrode structure 1 5 by weight, more preferably 3 5-6 0%.
- the diameter R 6 of the holding portion 19 is preferably 30 to 70%, more preferably 40 to 60 % of the pitch of the electrode structure 15.
- the thickness of the holding portion 19 is preferably 3 to 1, more preferably 5 to 9 ⁇ m.
- the holding portion 1 extends continuously along the surface of the insulating sheet 11 from the base end portion of the surface electrode portion 16. Since 9 is formed, even if the diameter of the front surface electrode portion 16 is small, the electric conductive structure 16 does not drop off from the back surface of the insulating sheet 11 and high durability is achieved. Is obtained.
- the surface electrode portion 16 by providing the surface electrode portion 16 with a small diameter, the separation distance between the surface electrode portions 16 is sufficiently secured, so that the flexibility of the insulating sheet 11 is sufficiently exhibited. As a result, stable electrical connection can be reliably achieved even in a circuit device in which the electrodes are formed with a small pitch.
- the sheet-like connector 10 of the first example described above can be manufactured, for example, as follows.
- the first sheet 11 and the first surface-side metal layer 1 9 formed on the surface of the green sheet 1 1 and the first image 1 An insulating layer 16 B formed on the surface of the metal layer 19 A, a second surface-side metal layer 16 A formed on the surface of the column 16 B, and an insulating sheet 11
- a laminate 10 A consisting of the back surface side metal layer 17 A formed on the back surface
- the first surface side metal layer 19 A is an electrode structure to be formed 1 5
- the thickness of the insulating layer 16 B is equal to the total thickness of the peripheral layer 16 B and the thickness of the first surface side metal layer 19 A.
- the back surface side metal layer 17 A is equivalent to the protruding height of the surface portion 16 in the structure 15 to be formed, and the back side metal layer 17 A is a portion of the back surface ridge portion 17 in the electrode structure 15 to be formed. Less than thickness, thickness It is considered to be unique.
- an etchable polymer material Is more preferably polyimide.
- a material for forming the insulating layer 16 B it is preferable to use an etchable polymer material, more preferably polyimide.
- Such a laminate 10 A is a laminate polyimide sheet in which a metal layer made of, for example, copper is laminated on both sides generally commercially available, and a metal layer force made of, for example, copper on one side.
- a polyimide sheet place the laminated thermoplastic polyimide sheet on the surface of one metal layer of the laminated polyimide sheet so that the solder surface where the metal layer is not in contact, and heat-press the both sides.
- a resist film 12 A for etching is formed on the entire surface of the second surface side metal layer 16 A, and a back side metal layer 1 On the surface of 7 A, a resist film 13 for etching in which a plurality of pattern holes 1 3 K are formed in accordance with the pattern corresponding to the pattern of the structure 15 to be formed is formed.
- materials for forming the resist films 12 A and 13 various materials used as a photoresist for etching can be used.
- the exposed portion of the back surface side metal layer 17 A exposed through the pattern holes 13 K of the resist film 13 is etched to remove the portion, as shown in FIG. A plurality of through holes 17 H communicating with the pattern holes 13 K of the resist film 13 are formed in the side metal layer 17 A, respectively.
- the insulating sheet 11 is subjected to an etching process on the exposed portions through the respective pattern holes 13 K of the resist film 13 and the respective through holes 17 H of the back side metal layer 17 A.
- the insulating sheet 11 communicates with the through holes 17 H of the back side metal layer 17 A, respectively, from the back side to the front side of the insulating sheet 11.
- a plurality of tapered through holes 1 1 H are formed, which become / h as going to.
- the respective pattern holes 13 K of the resist film 13, the respective through holes 17 7 of the back surface side metal layer 17, and the coloring surface By etching the exposed portion through each of the through holes 11 H of point 1 1 and removing the corresponding portion, as shown in FIG. 7, the first surface side metal layer 19 A, as shown in FIG. A plurality of through holes 1 9 H communicating with the through holes 1 1 H of the four sheets 1 1 respectively are formed.
- a plurality of tapered through holes 16 H are formed, which decrease in diameter from the back surface to the front surface of 6 B.
- the etching agent for etching the back surface side metal layer 17 A and the first surface side metal layer is appropriately selected according to the materials constituting these metal layers, and these metal layers are selected.
- the etching agent for etching the back surface side metal layer 17 A and the first surface side metal layer is appropriately selected according to the materials constituting these metal layers, and these metal layers are selected.
- the second night of chloride it is possible to use the second night of chloride.
- hydrazine-based water can be used as an etching solution for etching the insulating sheet, 4 ′ ′ (4 sheet 1 1 and short-circuiting 1 6 B, and it is possible to use the insulating conditions by selecting the etching conditions.
- Tapered through holes 11 H and 16 H can be formed in the conductive sheet 11 and the insulating layer 16 B, respectively, which become smaller in diameter from the back surface to the front surface.
- the resist films 12 A and 13 are removed from the laminate 1 OA in which the recess 10 K for forming the electrode structure is formed, and then, as shown in FIG. 9, the laminate 1 OA is A resist film 12 B for plating is formed so as to cover the entire surface of the second surface metal layer 16 A, and a metal structure to be formed on the surface of the back surface metal layer 17 A According to the pattern corresponding to the pattern of the back electrode part 17 in 15, a resist film 14 A for plating is formed in which a plurality of pattern holes 14 K are formed.
- materials for forming the resist films 12 B and 14 A various materials used as a photoresist for plating can be used.
- the laminate 1 OA is subjected to electrolytic plating treatment using the second surface-side metal layer 16 A as a ridge to form each electrode structure-forming recess 10 K and each pattern of the resist film 14 A
- a plurality of projecting surface electrodes 16 projecting from the surface of the insulating sheet 11, and the surfaces 3 ⁇ 4 g 16 respectively.
- a short circuit portion 18 extending continuously through the insulating sheet 11 in its thickness direction and a back surface electrode portion 17 connected to the other end of each of the short totals 18 .
- each of the back surface electrode portions 17 is in a state of being connected to each other via the back surface side metal layer 17 A.
- the laminate 1 OA force where the front surface 3 ⁇ 4 @ portion 16, short total ⁇ 18 and back electrode portion 17 are formed, the resist film 12 and 14 are removed, and then the back surface is removed.
- a patterned resist film 14 B for etching is formed to cover the electrode portion 17, and the second surface side metal layer 16 A and the back side metal layer 17 A are subjected to etching treatment, As shown in FIG. 12, the entire second surface side metal layer 16 A is removed, and the exposed portion of the back side metal layer is removed, whereby a plurality of back surface electrode portions 1 7 separated from one another are formed. Is formed.
- the etching process is performed on the outer 16 B to remove the whole and removing the resist film 14 B, as shown in FIG.
- the surface side metal layer 19 A and the back surface electrode portion 17 are exposed, and then, as shown in FIG. 14, the holding portion in the surface electrode portion 16 and the first surface side metal layer 17 A 1 9
- a resist film 12 C for etching is formed so as to cover the portion to be formed, and a resist film for etching 14 is formed so as to cover the entire back surface and back surface electrode portion 17 of the insulating sheet 11.
- Form C Thereafter, the first surface side metal layer 17 A is etched to remove the exposed portion, whereby the insulating sheet 11 is continuously formed from the peripheral surface of the base end portion of the surface electrode portion 16.
- a holding portion 19 is formed to extend outward along the surface in a shape of t to form an electrode structure 15.
- the sheet-like connector 10 shown in FIG. 1 is obtained.
- the recess 1 OK for forming the electrode structure is formed in advance in the laminate 10 A having the insulating sheet 11, and the recess 1 OK for forming the electrode structure is defined as the cavity. Since the portion 16 is formed, the diameter is small and the unevenness of the projecting height is small, and the surface electrode portion 16 is obtained.
- the surface end of the surface electrode portion 16 is continuously formed on the surface of the insulating sheet. Since it is possible to reliably form the holding portion 19 extending along the outer side, the electrode structure 15 drops out of the green sheet 1 1 even if the diameter of the surface electrode portion 16 is small. Thus, the sheet-like connector 10 having high durability can be manufactured.
- FIG. 16 is an explanatory cross section showing a configuration of a second example of the sheet-like connector according to the present invention.
- the sheet-like connector 10 of this second example is used for a probe for performing an electrical inspection of the circuit device, and has a flexible insulating sheet 11 and has this insulation 'property.
- the sheet 1 1 has a plurality of electrode structures 15 made of metal extending in the thickness direction of the insulating sheet 1 1. 11 mutually spaced apart in the surface direction of 1 1
- Each of the electrode structures 15 is exposed on the surface of the insulating sheet 1 1, and is exposed on the back surface of the insulating sheet 1 1 and a projecting surface electrode portion 16 projecting from the surface of the insulating sheet 1 1.
- the rectangular image-like sheet-like back surface S portion 17 and the base end of the front surface electrode portion 16 are continuously extended from the base sheet 11 in the thickness direction to the back surface electrode portion 17.
- a circular ring plate-like shape extending continuously outward from the circumferential surface of the connected cylindrical short-circuit portion 18 and the proximal end portion of the surface electrode portion 16 along the surface of the insulating sheet 11
- the holding unit 19 is constituted by the following.
- the tip end portion of the surface electrode portion 16 is formed in a substantially hemispherical shape whose diameter decreases toward the tip, and the diameter of the base end of the surface electrode portion 16 is the proximal end. It is assumed that the diameter of one end of the continuous 3 ⁇ 4 8 is continuous.
- the sheet-like connector 10 of the second example described above can be manufactured, for example, as follows.
- an insulating sheet 11 made of an etchable polymer material such as polyimide, and a surface side metal layer 19 B formed on the surface of the insulating sheet 11.
- An insulating layer 16 B formed of, for example, a resist, formed on the surface of the front side metal layer 19 B, a back side metal layer 17 A formed on the back side of the insulating sheet 11, and the back side Prepare a laminate 1 OB consisting of a resist film 13 A formed on a metal layer 17 A.
- the surface-side metal layer 19 B has a thickness equivalent to the thickness of the holding portion 19 in the electrode structure 15 to be formed, and the insulating layer 16 B is The total thickness of the thickness of the insulating layer 16 B and the thickness of the first surface side metal layer 19 A is equal to the protruding height of the surface electrode portion 19 in the electrode structure 15 to be formed. It is assumed that the back side metal layer 17 A has a thickness equal to the thickness of the back electrode portion 17 in the metal structure 15 to be formed.
- a plurality of through holes 16 H are formed in the insulating layer 16 B according to the pattern corresponding to the pattern of the surface portion 16 of the electrode structure 15 to be formed. It is done. Thereafter, the exposed portions of the surface side metal layer 19 B exposed through the respective through holes 16 H of the insulating layer 16 B are subjected to a etching process to remove the portions, as shown in FIG. As such, a plurality of through holes 19 H are formed in the surface side metal layer 19 B respectively, which communicate with the through holes 16 H of the i 16 B respectively.
- the insulating sheet 11 is etched on the exposed portions through the through holes 16 H of the insulating layer 16 B and the through holes 19 H of the surface side metal layer 19 B.
- the through holes 16 H of the insulating layer 16 B, the through holes 19 H of the surface side metal layer 19 B, and the through holes 1 of the insulating sheet 11 are formed on the surface of the laminate 10 B respectively.
- a plurality of electrode formation recesses 10 0 K in which 1 H is communicated are formed.
- the laminated body 10 B in which the recess 10 0 for forming a structure is formed is subjected to an electrolytic plating process using the back side metal layer 17 A as an electrode to form each electrode structure.
- FIG. 21 by filling the metal in the space 10 0, as shown in FIG. 21, a plurality of cylindrical surface electrode portion conductors 16 6 protruding from the surface of the insulating sheet 1 1, and the surface electrode portion Conductors 16 are continuously connected to the base end of each of the 6 bases, and the insulating sheet 11 is pierced in the thickness direction, and a short circuit part 18 connected to the back side metal layer 17 is formed. .
- resist film 13 B is removed to expose each surface electrode conductor 16 M and ⁇ : holding portion 19, and then electrolytic etching is performed to form each surface electrode conductor 16 M.
- a surface electrode portion 16 having a substantially hemispherical tip portion is formed.
- resist film 13 A printed on the back surface of the insulating sheet 11, as shown in FIG. 26, the back electrode portion in the back surface metal layer 17 A should be formed.
- resist film 13 D patterned so as to cover the part
- resist film 13 C is formed so as to cover the surface of insulating sheet 11, surface electrode portion 16 and holding portion 19. .
- the back surface side metal layer 17 A is etched to remove the exposed portion, whereby the back surface electrode portion 17 connected to the other end of the short circuit portion 18 is formed as shown in FIG. 27.
- the electrode structure 15 is thus formed.
- the same effect as that of the sheet connector of the first example can be obtained.
- FIG. 28 is an explanatory cross-sectional view showing a configuration of a third example of the sheet-like connector according to the present invention.
- the sheet-like connector 10 of this third example is used for a probe for performing an electrical inspection of a circuit device, and has a flexible insulating sheet 11, and this insulating sheet 1 In accordance with the pattern corresponding to the pattern of the electrode to be inspected of the circuit device, which has a plurality of electrode structures 15 made of metal extending in the thickness direction of the insulating sheet 11 in 1.
- the insulating sheets 11 are disposed apart from one another in the surface direction of the sheet.
- Each of the wedge structures 15 is exposed on the surface of the insulating sheet 1 1, and is exposed on the back surface of the insulating sheet 1 1 and a projecting surface electrode portion 16 projecting from the surface of the insulating sheet 1 1.
- By the ridge portion 18 and the circular ring plate shaped holding portion 19 extending radially outward continuously along the surface of the insulating sheet 11 continuously from the peripheral surface of the base end portion of the surface ⁇ portion 16. It is configured.
- the surface electrode portion 16 has a substantially hemispherical central portion whose diameter decreases from the proximal end side to the distal end side, and the central portion protruding from the central portion Having a diameter smaller than the diameter of the portion, having a substantially hemispherical tip toward the tip with a diameter of / J, and the diameter of the proximal end of the surface electrode portion 16 being continuous with the proximal end And the diameter of one end of the Also, the back face part 1 7 has a rectangular flat plate And a rectangular flat tip portion having a smaller size than the proximal end portion protruding from the proximal end portion.
- the sheet-like connector 10 of the third example described above can be manufactured, for example, as follows.
- Layer 19 A and an etchable polymer material formed on the surface of the first surface side metal layer 19 A, for example, an insulating layer made of polyimide, and an insulating layer 16 formed on the surface Prepare a laminate 1 OA consisting of the second surface-side metal layer 16 and the back-side metal layer 17 A formed on the back surface of the insulating sheet 11.
- the first surface side metal layer 19 A has a thickness equivalent to the thickness of the holding portion 19 in the electrode structure 15 to be formed
- the insulating layer 16 B is
- the second surface side metal layer 16 A is formed to have a thickness equal to the thickness (height) of the central portion of the surface electrode portion 19 in the base electrode structure 15.
- the back side metal layer 17 A has a thickness equivalent to the thickness (height) of the tip portion of the surface electrode portion 19 in the electrode structure 15 to be formed. It has the same thickness as the base end of the back ridge 17 in the above.
- a resist film 1 2 A for etching is formed on the entire surface of the second surface side metal layer 16 A and On the surface of the side metal layer 17 A, a resist film 13 for etching in which a plurality of pattern holes 13 K are formed in accordance with the pattern corresponding to the pattern of the electrode structure 15 to be formed is formed.
- a portion of the back surface side metal layer 17 A exposed through the pattern holes 13 K of the resist film 13 is etched to remove the portion, as shown in FIG. 3 0 (b).
- a plurality of through holes 17 H are formed in the back side metal layer 17 A.
- the insulating sheet 11 is etched on the exposed portions through the through holes 17 H of the pattern holes 13 K of the resist film 13 and the metal layer 17 of the third surface.
- the plurality of penetrations communicating with the through holes 17 H of the metal layer 17 A on the back surface side are respectively removed by removing the portions concerned as shown in FIG.
- holes 1 1 H are formed, and then through holes 1 7 H of each pattern hole 1 3 K of the resist film 13 and each back surface side metal layer 1 7 with respect to the first surface side metal layer 19 A
- the first surface side metal layer 19A is formed as shown in FIG. 30 (d).
- a plurality of through holes 19 H communicating with the through holes 11 H of the insulating sheet 11 are formed.
- the first insulating layer 16 B is formed with the first layer.
- a plurality of through holes 16 H communicating with the through holes 19 H of the surface side metal layer 19 A are formed.
- the through holes 17H of the back side metal layer 17A, the through holes 11H of the insulating and marginal sheet 11, and the through holes 19 of the first front side metal layer 19A on the back surface of the laminate 1 OA are formed.
- the resist films 12A and 13 are removed from the laminate 1 OA in which the recess 1 for forming a structure is formed, and then, as shown in FIG.
- a resist film 12 B for plating is formed so as to cover the entire surface of the front side metal layer 16 A, and a pattern of the back electrode portion 17 in the electrode structure 15 to be formed on the surface of the back side metal layer 17 A.
- a resist film 14A for plating is formed in which a plurality of pattern holes 14 K are formed in accordance with the pattern corresponding to FIG.
- the laminate 10A is subjected to electrolytic plating treatment using the second surface side metal layer 16A as a metal layer in the pattern holes 14K of the recesses 10K for forming each electrode structure and the resist film 14A.
- a plurality of projecting surface-electrode conductors 16 M protruding from the surface of the insulating sheet 11 are continuous with the respective proximal ends of the surface-electrode conductors 16 M.
- a plurality of back surface electrode portions 17 connected to the other ends of the plurality of short 8 and ridge 18 extending through the insulating sheet 11 in the thickness direction are formed.
- each of the front surface S portion conductors 16 M is connected to each other via the second front surface side metal layer 16 A
- each of the back surface electrode portions 17 is a back surface side metal They are connected to each other via layer 17A.
- Resist films 12 B and 14 A are thus removed from the laminate 1 OA in which the conductor 16 M for the front surface electrode portion, mm ⁇ 18 and the back surface portion 17 are formed, and then, as shown in FIG. 17 C and a resist film 14 C for etching so as to cover the back surface side metal layer 17 A And a resist film for etching which is patterned according to the pattern corresponding to the pattern of the end portion of the surface ridge portion 16 to be formed on the surface of the second surface side metal layer 16 A.
- D and etching the second surface-side metal layer 16 A to remove the exposed portion as shown in FIG.
- a plurality of surface electrode portion conductors 16 M separated from each other are formed having a cylindrical tip portion having a diameter smaller than the diameter of the portion.
- the resist film 12 D is removed, and the insulating layer 16 B is etched to remove the whole, whereby the conductor 16 M for the surface electrode portion and the first surface side metal layer 19 A Is exposed, and then, as shown in FIG. 35, the surface electrode portion conductor 16 M and the first surface side metal layer 17 A are patterned so as to cover the portion to be the holding portion 19.
- Form resist film 12 C for etching After that, the first surface side metal layer 19 A is etched to remove the exposed portion, as shown in FIG. 36, the base end portion of the surface electrode conductor 16 M respectively.
- a plurality of holding portions 19 are formed continuously extending from the peripheral surface outward along the surface of the insulating sheet 11.
- the resist film 12 C is removed to expose the surface electrode portion conductor 16 M and the holding portion 19, and then electrolytic etching is performed to form the surface electrode portion conductor 16 M.
- a surface ridge portion 16 having a substantially hemispherical central portion and a substantially hemispherical tip portion projecting from this middle portion is formed.
- the resist film 14 C is subjected to photolithography to form a patterned resist film 14 B for etching so as to cover the back electrode portion 17 as shown in FIG.
- a resist film 12 for etching is formed to cover the surface of sheet 1 1, surface electrode portion 16 and ⁇ holding portion 19, and the metal layer 17 on the back side is etched and exposed. By removing these portions, as shown in FIG. 39, a plurality of back electrode parts 17 separated from each other are formed, and an electrode structure 15 is formed.
- the sheet-like connector 10 force S of the third example shown in FIG. 28 can be obtained.
- the same effect as the sheet connector of the first example can be obtained.
- FIG. 40 is a cross section showing the configuration of the fourth example of the sheet-like connector according to the present invention.
- the sheet-like connector 10 of the fourth example has the same configuration as the second sheet-like connector except that the electrode structure 15 has a cylindrical surface ⁇ portion 16, It can be manufactured in the same manner as the method of manufacturing the sheet-like connector of the second example except that the surface electrode portion conductor is directly used as the surface electrode portion 16 without performing the electrolytic etching process on the electrode portion conductor. .
- the same effect as the sheet-like connector of the first example can be obtained.
- FIG. 41 is a cross-sectional view for explaining the configuration of an example of the inspection apparatus for a circuit device according to the present invention, and the inspection apparatus for this circuit device relates to each of a plurality of integrated circuits formed on a wafer. It is intended to carry out the electrical inspection of the circuit in the form of a wafer.
- the inspection apparatus for the circuit device includes a circuit inspection probe 1 for electrically connecting the test target electrodes 7 of the wafer 6 that is the circuit device to be inspected to the tester.
- a circuit inspection probe 1 for electrically connecting the test target electrodes 7 of the wafer 6 that is the circuit device to be inspected to the tester.
- this circuit inspection probe 1 as shown in an enlarged manner also in FIG. 42, a plurality of inspection electrodes according to a pattern corresponding to the pattern of the inspection electrode 7 in all the integrated circuits formed on the wafer 6
- An anisotropic conductive connector 30 is disposed on the surface of the inspection circuit 20.
- the circuit has an inspection circuit 3 ⁇ 4 3 ⁇ 4 20 formed on the surface of the single force S (the lower surface in the figure).
- a plurality of electrodes 15 are arranged in accordance with the pattern corresponding to the pattern of test electrode 7 in all the integrated circuits formed on wafer 6
- the sheet-like connector 10 shown in Fig. 1 is disposed.
- a force for pressing the circuit inspection probe 1 downward [I pressure plate 3 is provided, and the circuit inspection probe is provided.
- a wafer mounting table 4 on which a wafer 6 force S is placed, and an heating 5 is connected to each of the pressure plate 3 and the wafer mounting table 4.
- the 3 ⁇ 4 ⁇ material constituting the test circuit ⁇ anti 20 various materials conventionally used can be used.
- glass »1 reinforced epoxy resin, glass « reinforced phenolic resin , Glass fiber reinforced polyimide resin, glass »Composite resin materials such as reinforced bismaleimide triazine resin, glass, ceramic materials such as silicon dioxide, alumina, etc. can be mentioned.
- the linear thermal ⁇ number used the following 3 X 1 0 one 5 / K, more preferably 1 X 1 0- 7 ⁇ 1 X 1 0- 5 / K, and particularly preferably 1 X 1 0- 6 ⁇ 6 X 1 0-.
- the anisotropic conductive connector 30 has a plurality of electrode regions corresponding to the electrode electrodes on which test electrodes are disposed in all the integrated circuits formed on the wafer to be tested.
- a frame plate 31 in which the opening 32 is formed, and a plurality of the frame plates 31 are disposed so as to close one opening 32 respectively, and are fixed to and supported by the opening edge of the frame plate 31.
- the material constituting the frame plate 31 is not particularly limited as long as the frame plate 31 does not deform easily and has a shape of an extent that the shape is stably maintained, for example, metal Various materials such as materials, ceramic materials, and resin materials can be used.
- the frame plate 31 is made of, for example, a metal material, an insulating film may be formed on the surface of the frame plate 31. Good.
- metal materials constituting the frame plate 31 include iron, copper, nickel, chromium, cobalt, cobalt, magnesium, manganese, molybdenum, indium, bell, palladium, titanium, tungsten, aluminum, gold, platinum And metals such as silver or alloys or combinations of two or more of them.
- resin material constituting the frame plate 31 include liquid crystal polymers and polyimide resins.
- this inspection apparatus is for carrying out the WL BI (Wafer L ebe 1 Burn-in) test
- the number of linear thermal expansions is 3 X it is preferable to use a material of 1 0-5ZK less, more preferably one 1 XI 0- 7 ⁇ 1 X 1 0- 5 ZK, particularly preferably is 1 X 1 0- 6 ⁇ 8 X 1 0- 6 ⁇ .
- the thickness of the frame plate 31 is not particularly limited as long as the shape force S is maintained and the anisotropic conductive sheet 35 can be supported, and the specific thickness depends on the material. Although different, for example, it is preferable that it is 45 to 60 O zm, and it is preferably 40 to 400 m.
- Each of the anisotropic conductive sheets 35 is formed of an elastic polymer material, and a pattern corresponding to the pattern of the test electrode 7 of one electrode area formed on the wafer 6 which is a circuit device. And a plurality of conductive portions 36 extending in the thickness direction and insulating portions 37 respectively insulating the conductive portions 36 from one another. Further, in the illustrated example, on both surfaces of the anisotropic conductive sheet 35, the conductive portion 36 and the peripheral portion force S are formed with the protruding portions 38 projecting from the other surface at the positions where the force S is located. .
- conductive particles P exhibiting magnetism are densely contained in an oriented state so as to be aligned in the thickness direction.
- the insulating portion 37 contains no or almost no conductive particles P.
- the total thickness of the anisotropic conductive sheet 35 (the thickness of the conductive portion 36 in the illustrated example) is preferably 50 to 20 0 O m, more preferably 7 0 to: L 0 0 ⁇ ⁇ Particularly preferably, it is 80 to 500 / im. If this thickness is 50 ⁇ m or more, sufficient strength can be obtained for the anisotropic conductive sheet 35. On the other hand, when the thickness is 200 m or less, a conductive portion 36 having the required conductive property can be reliably obtained.
- the total height of the protrusions 38 is preferably 10% or more, more preferably 15% or more, of the thickness of the protrusions 38.
- the protrusion height of the protrusion 38 is preferably 100% or less, more preferably 70% or less, of the shortest width or diameter of the protrusion 38.
- a heat-resistant polymer substance having a crosslinked structure is preferable.
- a curable polymeric substance-type releasant that can be used to obtain a cross-linked polymeric substance various materials can be used, but liquid silicone rubber Is preferred.
- the liquid silicone rubber may be an addition type or a condensation type, but an addition type liquid silicone rubber is preferable.
- This addition type liquid silicone rubber is a one-component type which is cured by the reaction of a Biell group and a Si--H bond, and is made of a polysiloxane having both a burle group and a Si--H bond.
- the cured silicone rubber has a compression set at 150 ° C. Is preferably 10% or less, more preferably 8% or less, and still more preferably 6% or less.
- the compression set exceeds 10% ⁇ , when the resulting anisotropically conductive connector is used repeatedly or repeatedly under high temperature, the permanent deformation of the conductive portion 36 occurs. As a result, the chain of the conductive particles P in the conductive portion 36 is disturbed, which makes it difficult to maintain the required conductive growth.
- the compression set of the cured silicone rubber can be measured by the method of 2 P in JIS K 6 2 4 9.
- the silicone rubber cured product preferably has a durometer A hardness of 10 to 60 at 23 ° C., more preferably 15 to 55, particularly preferably 20 to 50. It is.
- the insulating portions 37 which mutually insulate the conductive portions 36 are easily distorted when subjected to force tl pressure, and the required distance between the conductive portions 36 is It may be difficult to maintain insulation.
- this durometer A hardness exceeds 60, a relatively large load of caro pressure is required to give a proper strain to the lead f
- the silicone rubber that forms the test chamber for performing the WL BI test, and the cured silicone rubber that forms the anisotropic conductive sheet 3 5 has a durometer A hardness of 2 5 to 4 at 23 ° C. It is preferably 0.
- the durometer A hardness of the silicone rubber hard product can be measured by a method in accordance with J I S K 6 24.
- the silicone rubber cured product preferably has a tear strength at 23 ° C. of 8 k NZm or more, more preferably 10 k NZm or more, more preferably 15 k NZm or more, particularly preferably It is more than 2 0 k N / m. If the tear strength is less than 8 kN, the durability tends to be reduced when the anisotropic conductive sheet 35 is excessively strained.
- the tear strength of the silicone rubber cured product can be measured by the method of rolling to J I S K 6 2 4 9.
- an appropriate curing catalyst can be used to cure the addition type liquid silicone rubber.
- platinum-based ones can be used, and specific examples thereof include chloroplatinic acid salt, platinum monounsaturated group-containing siloxane complex, and bur Complex of siloxane and platinum, complex of platinum and 1, 3-divinyl tetramethyldisiloxane, complex of trioreno regano phosphine or phosphite and platinum, asecetole acetate platinum chelate, complex of cyclic gen and platinum
- ⁇ P such as Rex is mentioned.
- the amount of curing catalyst used is appropriately selected in consideration of the type of curing catalyst and other curing conditions. Usually, it is 3 to 15 parts by weight with respect to 100 parts by weight of addition type liquid silicone rubber. .
- addition type liquid silicone rubber for the purpose of improving the titanotropism of the addition type liquid silicone rubber, adjusting the viscosity, improving the dispersion stability of the conductive particles, or obtaining 3W having high strength, etc.
- ordinary silica powder, corodanone silica, aeroge Inorganic fillers such as alumina, etc. can be contained.
- the conductive particles P contained in the conductive portion 36 it is preferable to use particles in which a high conductive metal is coated on the surface of particles exhibiting magnetism (hereinafter, also referred to as “magnetic core particles”).
- the term “highly conductive metal” refers to a metal having a conductivity of 5 x 10 6 ⁇ -1 m 1 1 or more at 0 ° C.
- the magnetic! ⁇ Particles for obtaining the conductive particles P preferably have a number average particle diameter of 3 to 40 m.
- the number average particle size of the magnetic core particles means one measured by the laser scattering method.
- the number average particle diameter is 3 m or more, it is easy to press and deform, and it is easy to obtain a conductive portion 36 having a low resistance value and high reliability.
- the above-mentioned number average particle diameter is 40 or less, the fine conductive portion 36 can be easily formed, and the obtained conductive portion 36 is likely to have stable conductivity. ,.
- the magnetic particles preferably have a BET specific surface area of 10 to 50 O m 2 kg, preferably 2 0 to 5 0 01! 1 2 ⁇ , particularly preferably 5 It is 0 to 40 O m 2 / kg.
- the magnetic core particles have a sufficiently large area capable of sticking, and therefore, the magnetic core particles should be reliably subjected to the required amount of marking. As a result, it is possible to obtain a large conductive “f” stator P with high conductivity, and since the wormworm area is sufficiently large between the conductive particles P, stable and high conductivity can be obtained.
- the BET specific surface area is 500 m 2 / kg or less, the magnetic particles do not become fragile, and the physical stress S is applied, the force S is small, and the stability is high. The conductivity is maintained.
- the magnetic core particles preferably have a coefficient of variation of 50% or less, more preferably 40% or less, still more preferably 30% or less, particularly preferably 50% or less. Is less than 20%.
- the variation coefficient of the particle diameter is represented by the formula: ( ⁇ / D n) XI 0 0 (where, ⁇ represents the value of the standard deviation of the particle diameter, and D n represents the number average particle diameter of Alendum. Is required by If the coefficient of variation of the particle diameter is 50% or less, the uniformity of the particle diameter is large, so it is possible to form a conductive portion 36 with a small amount of fluctuation in conductivity.
- the material constituting the magnetic particles it is possible to use iron, nickel, cobalt, those coated with these metals with copper or resin, and the like, and those having a saturation magnetization of 0.1 lWb m 2 or more. preferably he is used, and more preferably 0. 3Wb Roh m 2 or more, particularly preferably of 0. 5WbZm 2 or more, specifically, iron, nickel, copal bets or alloys thereof.
- Gold, silver, rhodium, platinum, chromium and the like can be used as the highly conductive metal coated on the surface of the magnetic particles, and among these, it is dielectrically stable and has high conductivity. In terms of point, gold is preferred.
- Conductive particles P the proportion of highly conductive metal to the core particles [(weight of the mass / particle highly conductive metal) XI 0 0] is set to 1 5 mass 0/0 or more, preferably 2 5 to 3 5 It is considered as mass%. If the proportion of the highly conductive metal is less than 15% by mass, when the resulting anisotropically conductive connector is repeatedly used under high temperature conditions, the conductivity of the conductive particles P is significantly reduced, resulting in the required Re, able to maintain conductive life.
- the conductive particles P preferably have a BET specific surface area of 10 to 500 m 2 / kg.
- this BET specific surface area is 10 m 2 / kg or more, the surface area of the object ⁇ is sufficiently large, so that a coating layer in which the total weight of the highly conductive metal is large can be formed. Particles having high conductivity can be obtained, and since the contact area is sufficiently large between the conductive particles, stable and high conductivity can be obtained.
- the BET specific surface area is 500 m 2 or less, the conductive particles do not become fragile, and the physical stress force S is less likely to cause stone crust breakage, Stable and high conductivity is maintained.
- the number average particle diameter of the conductive particles P is preferably 3 to 40 m, more preferably 6 to 25 ⁇ .
- the anisotropically conductive' sheet 35 obtained becomes easy to be deformed under pressure, and in the conductive portion 36, sufficient electric field can be generated between the conductive particles.
- the target is obtained.
- the shape of the conductive particles is not particularly limited, but in the polymer material forming material It is preferable that they are spherical, star-shaped or lumps of secondary particles in which they are dispersed, in that they can be easily dispersed.
- the moisture content of the conductive particles P is preferably 5% by mass or less, more preferably 3% by mass or less, still more preferably 2% by mass or less, particularly preferably 1% by mass or less.
- the conductive particles P may have their surfaces treated with a coupling agent such as a silane coupling agent.
- a coupling agent such as a silane coupling agent.
- the amount of the coupling agent to be used does not affect the conductivity of the conductive particles P, and is appropriately selected in the range, but the coating ratio of the coupling agent on the surface of the conductive particles P (relative to the surface area of the conductive particles).
- the ratio of the covering area of the coupling agent) is preferably 5% or more, more preferably the above-mentioned coverage is 7 to 10: L 0 0, more preferably 10 to 10: L 0 0, especially Preferably, the amount is 20 to L 0 0%.
- Such conductive particles P can be obtained, for example, by the following method.
- a ferromagnetic material is made into particles by a conventional method, or commercially available ferromagnetic particles are prepared, and the particles are classified to prepare magnetic particles having a required particle diameter.
- the treatment of the particles can be performed, for example, by a device such as an air bubble apparatus or a sonic sieving apparatus.
- specific conditions of the classification process are appropriately set according to the target magnetism: number average particle diameter of particles, type of classification device, and the like.
- the surface of the magnetic core particle is treated with an acid, and further washed with, for example, feK to remove impurities such as dirt, foreign matter, oxide film and the like present on the surface of the magnetic core particle, and then the magnetic By coating the surface of the particles with a highly conductive metal, conductive particles can be obtained.
- hydrochloric acid As the acid used to treat the surface of the magnetism & particles, hydrochloric acid and the like can be mentioned.
- ⁇ electroless plating method As a method of coating a highly conductive metal on the surface of the surface of the particles: ⁇ electroless plating method, displacement plating method Although methods such as ⁇ can be used, it is not limited to these methods.
- the method of producing conductive particles by the electroless plating method or the substitution plating method will be described.
- acid-treated, magnetic-treated magnetic particles are added to a plating solution to prepare a slurry, and this slurry is prepared.
- the particles in the slurry are separated from the plating solution, and then the particles are washed with, for example, pure water to obtain conductive particles comprising the surface of the magnetic: ⁇ particles coated with a highly conductive metal. .
- a base layer made of a highly conductive metal may be formed on the surface of the base layer.
- the method of forming the tack layer formed on the surface of the undercoat layer but the undercoat layer is formed on the surface of the magnetic core particles by the electroless plating method, and then the displacement plating is carried out. It is preferable to form a plating layer made of a highly conductive metal on the surface of the base plating layer by a method.
- the plating solution used for electroless plating or substitution plating is not particularly limited, and various commercially available solutions can be used.
- the particles may cause generation of large particle diameter and conductive particles. Therefore, classification of conductive particles may be performed as necessary. It is preferable to carry out the treatment, whereby the conductive particle force having the desired particle diameter can be reliably obtained.
- the content ratio of the conductive particles P in the conductive portion 36 is preferably 10 to 60%, preferably 15 to 50% by volume fraction. If this ratio is less than 10 ° / 0 , the conductive portion 36 with a sufficiently small electric resistance may not be obtained. On the other hand, if this ratio exceeds 60%, the resulting conductive material tends to be fragile, and the required elasticity as the conductive material 6 may not be obtained.
- the anisotropically conductive 'connector as described above can be produced, for example, by the method described in Japanese Patent Application Laid-Open No. 200202-32400.
- the wafer 6 which is the object of the inspection is placed on the wafer 4, and then the circuit inspection probe 1 is pressed downward by the calo pressure plate 3 so that the wafer 6 is removed.
- Each of the surface portions 16 of the grid-like connector 10 in the grid-like connector 10 is in contact with each of the test electrodes 7 of the wafer 6, and further, by each of the surface electrode portions 16, Each of the test electrodes 7 is pressurized.
- each of the conductive conductors 36 in the anisotropic conductive sheet 35 of the anisotropic conductive connector 30 corresponds to the detection electrode 21 of the inspection circuit 20 and the sheet-like connector 10
- the back side electrode portion 17 of the electrode structure 15 is compressed in the thickness direction, thereby forming a conductive path in the thickness direction in the conductive portion 36.
- Electrical connection between the test electrode 7 of the wafer 6 and the test electrode 21 of the test circuit 20 is achieved.
- the wafer 6 is heated by the heater 5 to a predetermined temperature of the wafer 6 via the wafer mounting table 4 and the pressure plate 3, and in this state, the required electrical inspection of each of the plurality of integrated circuits in the wafer 6 is performed. ⁇ Will be.
- the sheet-like connector 10 shown in FIG. 1 since the sheet-like connector 10 shown in FIG. 1 is provided, stable electrical connection also to the wafer 6 on which the skin detecting electrode 7 is formed at a small pitch. In the sheet-like connector 10, the electrode structure 15 does not come off, so that high durability can be obtained.
- the circuit inspection probe 1 having the sheet-like connector 10 shown in FIG. 1 since the circuit inspection probe 1 having the sheet-like connector 10 shown in FIG. 1 is provided, the wafer 6 on which the inspection ⁇ ® 7 is formed at a small pitch is obtained.
- the reliable electrical connection can be achieved reliably, and because the circuit inspection probe 1 has high durability, even if a large number of wafers are inspected, the reliability can be extended over a long period of time. Can perform high-quality examinations.
- the inspection apparatus of the circuit device of the present invention is not limited to the above example, and various modifications can be made as follows.
- Probes 1 for circuit inspection shown in Fig. 4 1 and Fig. 2 2 are for achieving the electrical connection collectively to the electrodes under test 7 of all the integrated circuits formed on the wafer 6 However, it may be electrically connected to a plurality of integrated circuits selected from among all the integrated circuits formed on the wafer 6.
- the number of integrated circuits to be selected is appropriately selected in consideration of the size of the wafer 6, the number of integrated circuits formed on the wafer 6, the number of electrodes to be inspected in each integrated circuit, and the like. There are 3 2, 6 4 and 1 2 8.
- the probes for circuit inspection are connected to the electrodes to be inspected 7 of a plurality of integrated circuits selected from among all the integrated circuits formed on the wafer 6.
- electrical inspection of all the integrated circuits formed on the wafer 6 can be performed.
- in order to carry out an electrical inspection on integrated circuits formed at a high V concentration on a wafer having a diameter of 8 inches or 12 inches it is possible to collectively apply all integrated circuits.
- the number of inspection electrodes and the number of wires of the circuit board for inspection used can be reduced as compared with the method of performing the inspection, whereby the manufacturing cost of the inspection can be reduced.
- the circuit device to be inspected according to the present invention is not limited to a wafer on which a large number of integrated circuits are formed, and may be a semiconductor chip, or a package LSI such as a BGA or CSP. It can be configured as an inspection of a circuit formed in a semiconductor integrated circuit device such as CMC.
- FIG. 45 a square with dimensions 6.5 mm x 6.5 mm, respectively, on a wafer 6 made of silicon 8 cm in diameter (linear thermal expansion coefficient of 3.3 x 10 ⁇ / ⁇ ) A total of 596 integrated circuits L were formed.
- Each of the integrated circuits L formed on the wafer 6 has a test electrode area A at its center as shown in FIG. 45, and the test electrode area A has a function as shown in FIG.
- Each of the rectangular test electrodes 26 having a dimension of 200 m in the vertical direction (vertical direction in FIG. 46) and a dimension of 80 ⁇ m in the horizontal direction (horizontal direction in FIG.
- test wafer W l Example 1
- a laminated polyimide sheet in which 5 ⁇ m thick copper layers are laminated on both sides of a 125 ⁇ m thick polyimide sheet, and a 5 ⁇ m thick copper layer is laminated on one side of a thermoplastic polyimide sheet Prepare a laminated thermoplastic polyimide sheet and place the laminated thermoplastic polyimide sheet on the surface of one copper layer of the laminated polyimide sheet so that the non-copper laminated surface is in contact with each other, and thermocompression-bond both of them.
- a laminate (10A) having the configuration shown in FIG. 3 was produced.
- the resulting laminate (10 A) is an insulating sheet of polyimide having a thickness of 12.5 ⁇ m.
- a resist film (12A) is formed on the entire surface of the second surface side metal layer (16A) using a dry film resist having a thickness of 25 m with respect to the above laminate (10A), and a back side metal layer ( Resist film in which circular 15496 pattern holes (1 3 K) having a diameter of 60 zm are formed on the surface of 1 7A according to the pattern corresponding to the pattern of the test electrode formed on the test wafer W1 (13) was formed (see Figure 4).
- the exposure process is performed by irradiating 80 m J of ultraviolet light with a high pressure mercury lamp, and the development process is performed on a developer composed of 1% sodium hydroxide solution. The operation of dipping for 2 seconds was repeated twice.
- the back side metal layer (17A) is etched using a ferric chloride-based etching solution under the conditions of 50 ° C. and 30 seconds to form the back side metal layer (17A).
- Each of the 15496 through holes (17H) communicating with the pattern hole 13K of the resist film (13) was formed (see FIG. 5).
- the insulating sheet (11) is etched using a hydrazine-based etching solution at 60 ° C. for 120 minutes to obtain an insulating sheet.
- each of the through holes (11H) has a tapered shape that decreases in diameter from the back surface to the front surface of the insulating sheet (11).
- the aperture diameter on the surface side was 60 ⁇ m, and the aperture diameter on the surface side was 45 / X m.
- the first surface side metal layer (19A) is etched using a ferric chloride-based etching solution under conditions of 50 ° C. for 30 seconds to obtain a first surface side metal layer In 19 A), 15496 through holes (19H) communicating with the through holes (11H) of the insulating sheet (11) were formed (see Fig. 7). Further, the insulating layer (16B) is etched using a hydrazine-based etching solution under conditions of 60 ° C. for 120 minutes to form the first surface side metal layer Through holes 19A) 15 496 through holes (16H) communicating with 19H were formed (see FIG. 8).
- Each of the through holes (16H) has a tapered shape that decreases in diameter from the back surface to the front surface of the insulating layer (16B), and the opening diameter on the back surface side is 45 ⁇ m and the opening diameter on the front surface side is 17 It was // m.
- the laminate (10A) in which the recess (10K) for forming an electrode structure is formed is immersed in sodium hydroxide at 45 ° C. for 2 minutes to obtain a resist from the ⁇ 3 ⁇ 4 layer (10A).
- the film (12A, 13) is removed, and then the laminate (10A) is coated with a dry film resist of 25 ⁇ m thickness so as to cover the entire surface of the second surface side metal layer (16A), A resist film (12B) is formed, and the dimension communicating with the through hole (17H) of the back side metal layer (17A) on the surface of the back side metal layer (17A) is 15 ⁇ ⁇ 60 ⁇ m. Rectangular one
- a resist film (14A) having 5496 pattern holes (14K) formed was formed (see FIG. 9).
- the exposure process is performed by irradiating ultraviolet light of 8 OmJ with high pressure water Sii: D, and the development process consists of a 1% aqueous solution of sodium hydroxide 7%.
- the operation of immersion in the developer for 40 seconds was repeated twice.
- the laminate (10A) is immersed in a plating bath containing nickel sulfamate, and the second surface side metal layer (16A) is used as an electrode for the ⁇ 3 ⁇ 4 layer (10A) in question.
- the metal By filling the metal into the recess (10K) for forming each electrode structure and each pattern hole (14K) of the resist film (14A), the surface portion (16), ⁇ ⁇ (18) and The back electrode parts (17) connected to each other through the back side metal layer (17A) were formed ( See Figure 10).
- the laminated body (10A) in which the front surface electrode portions (16), (18) and the back surface electrode portion (17) are formed is 45.
- the resist film (12B, 14A) is removed from the ⁇ 3 ⁇ 4 layer (10A) by immersing in sodium hydroxide of C for 2 minutes, and thereafter, the back electrode is made of a 25 m-thick dry-well inolem resist.
- a patterned etching resist film (14B) was formed to cover the portion (17) (see FIG. 11).
- the exposure process is performed by irradiating 8 Om J of ultraviolet light with a high pressure mercury lamp, and the development process is performed on a developer consisting of 1% ⁇ sodium hydroxide water ⁇ M It was carried out by repeating the operation of soaking for 2 seconds. Thereafter, the second surface side metal layer (16 ′ ′) and the back surface side metal layer (17 ′ ′) are etched using an ammonia-based etching solution under conditions of 50 ° C. for 30 seconds. The entire surface side metal layer (16A) was removed, and the exposed portion of the back side metal layer (17A) was removed, thereby separating each of the back electrode portions (17) from each other (see FIG. 12). ).
- the insulating layer (16B) is removed by etching the insulating layer (16%) using a hydrazine-based etching solution under conditions of 60 ° C. for 120 minutes, and removing the resist film (14B).
- the surface electrode portion (16), the first surface side metal layer (19A) and the back surface electrode portion (17) were exposed by removing the (see FIG. 13).
- a resist film patterned so as to cover the portion to be the holding portion (19) in the surface electrode portion (16) and the first surface side metal layer (17A) by a dry film having a thickness of 25 m.
- a resist film (14C) was formed to cover the entire surface of the back surface and back surface portion (17) of the insulating sheet (11) (see FIG. 14).
- the exposure process is performed by irradiating 8 Om J of ultraviolet light with a high-pressure water source, and the development process is performed on a developer composed of 1% 7 sodium oxide hydroxide. It was carried out by repeating the immersion operation twice.
- the first surface-side metal layer (19A) is etched using a ferric chloride-based etching solution under conditions of 50 ° C. for 30 seconds to obtain a group of surface ⁇ portions (16).
- a disc ring-shaped holding portion (19) extending radially outward continuously along the surface of the insulating sheet (11) continuously from the peripheral surface of the end portion is formed, thereby forming the electrode structure (15). Formed (see Figure 15).
- the sheet-like connector (10) according to the present invention was manufactured by removing the resist film (14 C) from the back and back electrode parts (17) of the insulating sheet (11). See).
- the sheet-like connector (10) thus obtained is such that the thickness d of the insulating sheet (1 1) is 12.5 ⁇ m, and the shape of the surface electrode portion (16) of the leak-barrier (15) is a truncated cone.
- the diameter of the base end is 45 m
- the diameter R 2 of the tip is 17 im
- the protrusion height h is 25 m
- the shape of MM ⁇ (18) is a truncated cone
- the diameter R of one end of the surface side 3 is 45 ⁇ ⁇
- diameter R 4 of the other end on the back side is 60 ⁇
- the shape of back electrode (17) is a rectangular flat plate whose width (diameter R 5 ) is 60 ⁇ ⁇ and length is 150 im the thickness D 2 is 30 m
- sheet connector M (1-1) sheet connector M (1-5)
- the magnetic core particles were prepared as follows using a commercially available Nikkono 1 Tachiko (We st i i mitm, “F C 1000”).
- the magnetic core particles obtained had a number average particle diameter of 10 ⁇ , a coefficient of variation of particle diameter of 10%, a BET specific surface area of 0.2 ⁇ 10 3 m 2 / kg, and a saturation magnetization of 0.6 WbZm 2 .
- the obtained conductive mark has a number-average particle size of 12 m, a BET specific surface area of 0 ⁇ 15 ⁇ 10 3 m 2 kg, (mass of gold forming ⁇ ) / (mass of whole conductive particle) The value of was 0.3.
- this conductive '1 ⁇ green particle be a' conductive particle (a) '.
- This frame plate (3 1) is Konor (linear thermal expansion number 5 ⁇ 10 16 ⁇ ) and its thickness is 6 0 ⁇ ⁇ .
- Each of the openings (3 2) has a dimension of 1 8 0 O / ⁇ m in the horizontal direction (horizontal direction in FIGS. 4 7 and 4 8) and vertical direction (vertical directions in FIGS. 4 7 and 4 8)
- the dimension of) is 600 ⁇ m.
- a circular air inlet (3 3) is formed, and its diameter is 100 m.
- the addition type liquid silicone rubber used is a two-component type consisting of a liquid A and a liquid B each having a viscosity of 25 OP a ⁇ s, and the cured product has a compression set of 5%, Durometer A hardness is 32 and tear strength is 25 kN / m.
- the characteristics 14 of the addition type liquid silicone rubber and the cured product thereof are measured as follows.
- the solution A and the solution B in the two-component addition type liquid silicone rubber were stirred and mixed in an equal ratio.
- the mixture is poured into a mold, the mixture is subjected to degassing treatment with a crucible, and then curing treatment is performed at 120 ° C. for 30 minutes to obtain a thickness of 1 2.
- a cylindrical body made of a cured silicone rubber having a diameter of 29 mm and a diameter of 2 mm was used, and post curing was performed on this cylindrical body at 200 ° C. for 4 hours.
- the cylindrical body thus obtained was used as a test piece, and the compression set at 150 ° 2 ° C. was measured at 2 ° C. in JIS K 6249.
- the tear strength of the cured silicone rubber was measured as follows.
- a sheet with a thickness of 2.5 mm was obtained by curing and addition curing of the addition type liquid silicone rubber under the same conditions as in (ii) above.
- a crescent-shaped test piece was punched out of this sheet, and the tear strength was measured at 2 ° C. in a soil at 23 ° C. in accordance with J I S K 6249.
- Durometer A hardness is obtained by stacking 5 sheets obtained in the same manner as in (iii) above, using the obtained stack as a test piece, at 23 ⁇ 2 ° C according to JIS K 6249. The value was measured.
- the frame plate (31) can be prepared according to the method described in JP-A-2002-324600.
- Produced an anisotropically conductive connector was performed under the conditions of 100 ° C. for 1 hour while applying a magnetic field of 2 T in the thickness direction by an electromagnet.
- each of the anisotropically conductive sheets (35) has a lateral dimension of 2500 ⁇ m and a longitudinal dimension of 1400 ⁇ m, 2 6 conductive parts (36) with a pitch of 120 m in two rows in the ⁇ direction (the number of conductive parts in one row is 13 and the distance between the conductive parts in the vertical direction is 450 / m
- each of the conductive parts (36) has a lateral dimension of 60 m, a directional dimension of 200 m, a thickness of 150 // m, and a projection (38) with a projection height of 25 m.
- the thickness of the insulation (37) is 100 m.
- a conductive portion for non-connection is disposed between the conductive portion (36) located on the outermost side in the direction and the opening edge of the frame plate.
- Each of the conductive parts for continuation has a lateral dimension of 80 ⁇ m, a longitudinal dimension of 300 ⁇ m and a thickness of 150 ⁇ m.
- anisotropically conductive connector Cl The resulting anisotropically conductive connector is referred to as "anisotropically conductive connector Cl”.
- Circuit mating for inspection m Alumina ceramics as materials (Sen'netsu ⁇ 3 ⁇ 4 number 4. 8 X 10 - 6 ZK) using a test inspection electrodes in accordance with a pattern corresponding to the pattern of the electrodes to be inspected in test wafer W1 (2 1) is ⁇ For the circuit ⁇ (20).
- the test circuit ⁇ (20) is a rectangle with an overall dimension of 30 cm ⁇ 30 cm, and its test electrode has a dimension of ⁇ 60 ⁇ m in the vertical direction and a dimension of 200 m in the vertical direction.
- the resulting test circuit is called “test circuit ⁇ T 1”.
- connection stability test was carried out as follows for each of the sheet-like connectors M (1 -1) to the sheet-like connectors M (1-5).
- the test wafer W1 is placed on the test stand, and the sheet connectors are positioned on the surface of the test wafer W1 such that each of the surface portions is positioned on the test electrode of the test wafer W1.
- the anisotropic conductive connector C 1 is positioned on the sheet-like connector so that each of the conductive portions thereof is positioned on the back electrode of the sheet-like connector.
- the test circuit board T1 is positioned on the positive conductive connector so that each of the detection electrodes is positioned on the conductive portion of the anisotropic conductive connector, and the test circuit board T1 is further disposed.
- the calorific pressure was applied downward at a load of 2.4 kg (the load applied per conductive part of the anisotropically conductive connector was an average of 0.8 g).
- the 15496 inspection electrodes on the inspection circuit board T 1 are electrically connected to each other through the anisotropic conductive connector C 1, the sheet-like connector and the test wafer W 1.
- the electrical resistance between two inspections connected in series is measured sequentially, and the half of the measured electrical resistance value is used as the inspection electrode of the inspection circuit board 1 and the test wafer W1.
- the electrical resistance to the electrode under test (hereinafter referred to as “conduction resistance”) was recorded, and the percentage of measurement points where the conduction resistance at all measurement points was less than 1 ⁇ was determined.
- the load on the inspection circuit board T1 is changed from 12. 4 kg to 31 kg (the load applied per conductive part of the anisotropic conductive connector is 2 g on average) in the same manner as above. Then, the percentage of measurement points where the conduction resistance at all measurement points was less than 1 ⁇ was determined.
- Sheet-like connector M (1-1), sheet-like connector M (1-2) and sheet-like connector For each of Nectar M (1-4), the durability test was conducted as follows.
- the test wafer W1 is placed on a test table equipped with a heater, and the sheet-like connector is placed on the surface of the test wafer W1, and each of its surface electrodes is the test electrode of the test wafer W1. Align the top of the sheet-like connector, and align the anisotropic conductive connector C 1 on this sheet-like connector so that each of the conductive parts is on the back electrode of the sheet-like connector.
- test circuit £ 1 and T 1 Placing and aligning the test circuit £ 1 and T 1 on the anisotropically conductive connector so that each of the test electrodes is located on the conductive portion of the anisotropically conductive connector; the testing circuit ⁇ T1 load downward 31 k g (load applied to the conductive portion 1 per anisotropically conductive connector 2 g on the average) was pressurized. Then, the test stand is heated to 85 ° C., and after the force S stability of the test stand, with respect to the 15496 detection electrodes on the test circuit board T1, the anisotropic conductive connector C1, the sheet Connector and the resistance between the two detection electrodes electrically connected to each other via the test wafer W1 are sequentially measured, and half of the measured electric resistance value.
- the value is recorded as the electrical resistance (hereinafter referred to as “conduction resistance”) between the inspection electrode of the inspection circuit 3 ⁇ 4 ⁇ 3 ⁇ 4 T 1 and the test electrode of the test wafer W1, and the conduction resistance is 1 ⁇ or more.
- the conduction resistance is 1 ⁇ or more.
- the sheet-like connector was produced in the same manner as in Example 1 except that the whole of the first surface side metal layer was removed by the etching treatment, and the holding portion was not formed.
- the obtained sheet-like connector has a thickness d of the insulating sheet, a force S of 12.5 m, a shape of the surface electrode portion of the electro-static structure of a truncated cone, a diameter of its base end of 45 zm, a diameter of its tip Is 17 / z m, the protrusion height is 25 z m, the shape of the short circuit part is a truncated cone, the diameter of one end on the surface side is 45 m, The other end on the back side has a diameter of 60 m and the shape of the back electrode portion is a rectangular flat plate having a width of 60 m, a length of 150 111 and a thickness of 30 m.
- sheet connector M (2-1) sheet connector M
- sheet connector M (2-5) sheet connectors
- connection stability test was conducted in the same manner as in Example 1 for each of the sheet-like connector M (2-1) to the sheet-like connector M (2-5). The results are shown in Table 1.
- a sheet-like connector was produced as follows.
- the diameter of the base end of this surface electrode crucible was 70 ⁇ m, and the height from the surface of the insulating sheet was 20 / im. Thereafter, the copper layer in the laminated material is subjected to photoetching treatment to remove a part of the copper layer, thereby forming a rectangular back electrode portion of 60 imXl 50 m, and further, gold plating the front electrode portion and the back portion. By forming a sheet-like connector, a sheet-like connector was produced.
- connection stability test was conducted in the same manner as in Example 1 for each of the sheet-like connectors M (3-1) to the sheet-like connectors M (3-5). The results are shown in Table 1.
- Sheet-like connector-M ( ⁇ 5) 100 100
- Sheet-like connector M (2 — 1) 1 00 1 0 0
- Sheet-like connector M (3-4) 9 0 1 00
- the size is small for all the test electrodes. It has been observed that stable electrical connection force can be achieved with a low load. In addition, it was confirmed that the sheet-like connector according to Example 1 had high durability.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Connecting Device With Holders (AREA)
- Non-Insulated Conductors (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Saccharide Compounds (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Tests Of Electronic Circuits (AREA)
- Multi-Conductor Connections (AREA)
- Professional, Industrial, Or Sporting Protective Garments (AREA)
- Adhesive Tapes (AREA)
- Medicinal Preparation (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60332106T DE60332106D1 (de) | 2002-10-28 | 2003-10-24 | Anwendung dafür |
US10/515,062 US7318729B2 (en) | 2002-10-28 | 2003-10-24 | Sheet-form connector and production method and application therefor |
CNA2003801005604A CN1692283A (zh) | 2002-10-28 | 2003-10-24 | 片状连接器及其生产过程和应用 |
AU2003275649A AU2003275649A1 (en) | 2002-10-28 | 2003-10-24 | Sheet-form connector and production method and application therefor |
AT03758872T ATE464569T1 (de) | 2002-10-28 | 2003-10-24 | Sheet-form-verbinder und herstellungsverfahren und anwendung dafür |
EP03758872A EP1503216B1 (en) | 2002-10-28 | 2003-10-24 | Sheet-form connector and production method and application therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002313457 | 2002-10-28 | ||
JP2002-313457 | 2002-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004038433A1 true WO2004038433A1 (ja) | 2004-05-06 |
Family
ID=32171165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/013618 WO2004038433A1 (ja) | 2002-10-28 | 2003-10-24 | シート状コネクターおよびその製造方法並びにその応用 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7318729B2 (ja) |
EP (1) | EP1503216B1 (ja) |
JP (3) | JP2004172588A (ja) |
KR (1) | KR100595787B1 (ja) |
CN (1) | CN1692283A (ja) |
AT (1) | ATE464569T1 (ja) |
AU (1) | AU2003275649A1 (ja) |
DE (1) | DE60332106D1 (ja) |
TW (1) | TWI250600B (ja) |
WO (1) | WO2004038433A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005111632A1 (ja) * | 2004-05-19 | 2005-11-24 | Jsr Corporation | シート状プローブおよびその製造方法並びにその応用 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070040245A1 (en) * | 2003-11-17 | 2007-02-22 | Jsr Corporation | Anisotropic conductive sheet, manufacturing method thereof, and product using the same |
TW200604533A (en) * | 2004-04-27 | 2006-02-01 | Jsr Corp | Sheetlike probe, its manufacturing method and its application |
JP4618633B2 (ja) * | 2004-09-01 | 2011-01-26 | Hoya株式会社 | プローブ部材及びその製造方法 |
JP4852236B2 (ja) * | 2004-10-08 | 2012-01-11 | パナソニック株式会社 | バンプ付きメンブレンおよびその製造方法およびウエハの検査方法 |
WO2006051880A1 (ja) * | 2004-11-11 | 2006-05-18 | Jsr Corporation | シート状プローブおよびプローブカードならびにウエハの検査方法 |
WO2006051878A1 (ja) * | 2004-11-11 | 2006-05-18 | Jsr Corporation | シート状プローブおよびプローブカードならびにウエハの検査方法 |
FI20041525A (fi) * | 2004-11-26 | 2006-03-17 | Imbera Electronics Oy | Elektroniikkamoduuli ja menetelmä sen valmistamiseksi |
JP2006194620A (ja) * | 2005-01-11 | 2006-07-27 | Tokyo Electron Ltd | プローブカード及び検査用接触構造体 |
US20090072844A1 (en) * | 2005-05-19 | 2009-03-19 | Jsr Corporation | Wafer inspecting sheet-like probe and application thereof |
US7052290B1 (en) * | 2005-08-10 | 2006-05-30 | Sony Ericsson Mobile Communications Ab | Low profile connector for electronic interface modules |
EP1936387A4 (en) | 2005-10-11 | 2011-10-05 | Jsr Corp | ANISOTROPIC CONDUCTOR CONNECTOR AND CIRCUIT DEVICE INSPECTION EQUIPMENT |
JP4383487B2 (ja) * | 2007-03-19 | 2009-12-16 | 古河電気工業株式会社 | 金属張積層体及び金属張積層体の製造方法 |
WO2008156162A1 (ja) * | 2007-06-20 | 2008-12-24 | Jsr Corporation | ウエハ検査用プローブ部材およびプローブカード |
US8097946B2 (en) * | 2007-10-31 | 2012-01-17 | Sanyo Electric Co., Ltd. | Device mounting board, semiconductor module, and mobile device |
JP5253972B2 (ja) * | 2008-04-28 | 2013-07-31 | 富士フイルム株式会社 | 構造体およびその製造方法 |
WO2010047141A1 (ja) | 2008-10-21 | 2010-04-29 | 株式会社旭電化研究所 | メスコネクタ、それに組付けるオスコネクタ、それらを用いた電気・電子機器 |
JP2010153263A (ja) * | 2008-12-25 | 2010-07-08 | Sumitomo Electric Ind Ltd | 異方性導電シート、その製造方法、基板体、検査装置、部品モジュール、および電子製品 |
EP2388861B2 (en) * | 2009-01-15 | 2019-09-25 | Sekisui Polymatech Co., Ltd. | Connector |
JP5435484B2 (ja) * | 2010-03-24 | 2014-03-05 | 富士フイルム株式会社 | 金属充填微細構造体の製造方法 |
KR101688006B1 (ko) * | 2010-11-26 | 2016-12-20 | 삼성전자주식회사 | 반도체 장치 |
CN104022378B (zh) * | 2014-04-24 | 2016-04-27 | 东莞市宙辉电子科技有限公司 | 一种灯具连接装置的改良结构 |
KR102361639B1 (ko) | 2017-07-10 | 2022-02-10 | 삼성전자주식회사 | 유니버설 테스트 소켓, 반도체 테스트 장비, 및 반도체 장치의 테스트 방법 |
IT201700100522A1 (it) * | 2017-09-07 | 2019-03-07 | Technoprobe Spa | Elemento di interfaccia per un’apparecchiatura di test di dispositivi elettronici e relativo metodo di fabbricazione |
JP2020027725A (ja) * | 2018-08-10 | 2020-02-20 | 信越ポリマー株式会社 | 電気コネクター及びその製造方法 |
WO2020105693A1 (ja) * | 2018-11-21 | 2020-05-28 | 三井化学株式会社 | 異方導電性シート、異方導電性複合シート、異方導電性シートセット、電気検査装置および電気検査方法 |
KR102280651B1 (ko) * | 2018-12-26 | 2021-07-23 | 주식회사 아이에스시 | 전기접속용 커넥터 및 그 제조 방법 |
US11450626B2 (en) * | 2020-08-25 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package |
US11714105B2 (en) * | 2021-03-30 | 2023-08-01 | Enplas Corporation | Socket and inspection socket |
WO2023235616A1 (en) * | 2022-06-02 | 2023-12-07 | Atlas Magnetics Company | Method and apparatus for reducing conductive metal thermal expansion while maintaining high-frequency performance in multiple-level semiconductor packaging |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5207585A (en) | 1990-10-31 | 1993-05-04 | International Business Machines Corporation | Thin interface pellicle for dense arrays of electrical interconnects |
JPH07288271A (ja) | 1994-04-19 | 1995-10-31 | Aging Tesuta Kaihatsu Kyodo Kumiai | 集積回路用測定電極 |
JPH08235935A (ja) * | 1996-01-10 | 1996-09-13 | Nitto Denko Corp | 異方導電フィルム |
WO2000011755A1 (de) | 1998-08-17 | 2000-03-02 | Infineon Technologies Ag | Kontaktiervorrichtung, insbesondere zum ankontaktieren von elektrischen bauelementen und schaltungsträgern, sowie verfahren zu deren herstellung |
US6064217A (en) | 1993-12-23 | 2000-05-16 | Epi Technologies, Inc. | Fine pitch contact device employing a compliant conductive polymer bump |
EP1061608A2 (en) | 1999-05-10 | 2000-12-20 | Hirose Electric Co., Ltd. | Board to board electrical connectors |
JP2001208776A (ja) | 2000-01-28 | 2001-08-03 | Toppan Printing Co Ltd | 半導体検査治具及びその製造方法 |
US20020043980A1 (en) | 2000-08-24 | 2002-04-18 | Rincon Reynaldo M. | Multiple-chip probe and universal tester contact assemblage |
US20020129323A1 (en) | 1997-05-09 | 2002-09-12 | Susumu Kasukabe | Connection device and test system |
JP2002289277A (ja) * | 2001-03-27 | 2002-10-04 | Jsr Corp | 異方導電性コネクターおよびその応用製品 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0140034B1 (ko) * | 1993-12-16 | 1998-07-15 | 모리시다 요이치 | 반도체 웨이퍼 수납기, 반도체 웨이퍼의 검사용 집적회로 단자와 프로브 단자와의 접속방법 및 그 장치, 반도체 집적회로의 검사방법, 프로브카드 및 그 제조방법 |
US5531021A (en) * | 1994-12-30 | 1996-07-02 | Intel Corporation | Method of making solder shape array package |
IL128997A (en) * | 1999-03-15 | 2002-12-01 | Aprion Digital Ltd | Install electrical connection |
US6969622B1 (en) * | 2001-02-09 | 2005-11-29 | Jsr Corporation | Anisotropically conductive connector, its manufacture method and probe member |
US6551112B1 (en) * | 2002-03-18 | 2003-04-22 | High Connection Density, Inc. | Test and burn-in connector |
JP2004031203A (ja) * | 2002-06-27 | 2004-01-29 | Shin Etsu Polymer Co Ltd | 導電接点素子及び電気コネクタ |
JP2004259530A (ja) * | 2003-02-25 | 2004-09-16 | Shinko Electric Ind Co Ltd | 外部接触端子を有する半導体装置及びその使用方法 |
-
2003
- 2003-10-17 JP JP2003358105A patent/JP2004172588A/ja not_active Withdrawn
- 2003-10-17 JP JP2003358106A patent/JP3649239B2/ja not_active Expired - Fee Related
- 2003-10-23 TW TW092129467A patent/TWI250600B/zh not_active IP Right Cessation
- 2003-10-24 WO PCT/JP2003/013618 patent/WO2004038433A1/ja active IP Right Grant
- 2003-10-24 KR KR1020047018241A patent/KR100595787B1/ko active IP Right Grant
- 2003-10-24 DE DE60332106T patent/DE60332106D1/de not_active Expired - Lifetime
- 2003-10-24 CN CNA2003801005604A patent/CN1692283A/zh active Pending
- 2003-10-24 AT AT03758872T patent/ATE464569T1/de not_active IP Right Cessation
- 2003-10-24 US US10/515,062 patent/US7318729B2/en not_active Expired - Lifetime
- 2003-10-24 EP EP03758872A patent/EP1503216B1/en not_active Expired - Lifetime
- 2003-10-24 AU AU2003275649A patent/AU2003275649A1/en not_active Abandoned
-
2004
- 2004-12-15 JP JP2004362950A patent/JP3800235B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5207585A (en) | 1990-10-31 | 1993-05-04 | International Business Machines Corporation | Thin interface pellicle for dense arrays of electrical interconnects |
US6064217A (en) | 1993-12-23 | 2000-05-16 | Epi Technologies, Inc. | Fine pitch contact device employing a compliant conductive polymer bump |
JPH07288271A (ja) | 1994-04-19 | 1995-10-31 | Aging Tesuta Kaihatsu Kyodo Kumiai | 集積回路用測定電極 |
JPH08235935A (ja) * | 1996-01-10 | 1996-09-13 | Nitto Denko Corp | 異方導電フィルム |
US20020129323A1 (en) | 1997-05-09 | 2002-09-12 | Susumu Kasukabe | Connection device and test system |
WO2000011755A1 (de) | 1998-08-17 | 2000-03-02 | Infineon Technologies Ag | Kontaktiervorrichtung, insbesondere zum ankontaktieren von elektrischen bauelementen und schaltungsträgern, sowie verfahren zu deren herstellung |
EP1061608A2 (en) | 1999-05-10 | 2000-12-20 | Hirose Electric Co., Ltd. | Board to board electrical connectors |
JP2001208776A (ja) | 2000-01-28 | 2001-08-03 | Toppan Printing Co Ltd | 半導体検査治具及びその製造方法 |
US20020043980A1 (en) | 2000-08-24 | 2002-04-18 | Rincon Reynaldo M. | Multiple-chip probe and universal tester contact assemblage |
JP2002289277A (ja) * | 2001-03-27 | 2002-10-04 | Jsr Corp | 異方導電性コネクターおよびその応用製品 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005111632A1 (ja) * | 2004-05-19 | 2005-11-24 | Jsr Corporation | シート状プローブおよびその製造方法並びにその応用 |
CN100468065C (zh) * | 2004-05-19 | 2009-03-11 | Jsr株式会社 | 片状探针及其制造方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
EP1503216B1 (en) | 2010-04-14 |
JP3649239B2 (ja) | 2005-05-18 |
DE60332106D1 (de) | 2010-05-27 |
JP2004172588A (ja) | 2004-06-17 |
KR100595787B1 (ko) | 2006-06-30 |
TWI250600B (en) | 2006-03-01 |
KR20050040863A (ko) | 2005-05-03 |
ATE464569T1 (de) | 2010-04-15 |
JP2004172589A (ja) | 2004-06-17 |
CN1692283A (zh) | 2005-11-02 |
JP3800235B2 (ja) | 2006-07-26 |
AU2003275649A1 (en) | 2004-05-13 |
TW200423275A (en) | 2004-11-01 |
EP1503216A4 (en) | 2008-03-26 |
US20050215086A1 (en) | 2005-09-29 |
JP2005108861A (ja) | 2005-04-21 |
US7318729B2 (en) | 2008-01-15 |
EP1503216A1 (en) | 2005-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004038433A1 (ja) | シート状コネクターおよびその製造方法並びにその応用 | |
KR101140505B1 (ko) | 시트상 프로브, 그의 제조 방법 및 그의 응용 | |
WO2004015761A1 (ja) | 異方導電性コネクターおよび導電性ペースト組成物、プローブ部材並びにウエハ検査装置およびウエハ検査方法 | |
WO2004102208A1 (ja) | シート状プローブおよびその製造方法並びにその応用 | |
KR20070046033A (ko) | 웨이퍼 검사용 이방 도전성 커넥터 및 그의 제조 방법 및응용 | |
JP3736572B2 (ja) | シート状プローブおよびその製造方法並びにその応用 | |
JP3760950B2 (ja) | シート状プローブの製造方法 | |
JP3770126B2 (ja) | 異方導電性シートおよび回路装置の電気的検査装置 | |
JP3649245B2 (ja) | シート状プローブの製造方法 | |
JP2006351504A (ja) | ウエハ検査用異方導電性コネクターおよびその製造方法、ウエハ検査用プローブカードおよびその製造方法並びにウエハ検査装置 | |
JP2005338072A (ja) | シート状プローブの製造方法 | |
JP4655742B2 (ja) | シート状プローブおよびその応用 | |
JP3788477B1 (ja) | ウエハ検査用探針部材、ウエハ検査用プローブカードおよびウエハ検査装置 | |
KR20070019744A (ko) | 시트형 프로브 및 그의 제조 방법 및 그의 응용 | |
JP2006098395A (ja) | ウエハ検査用異方導電性コネクターおよびその製造方法並びにその応用 | |
JP3781048B2 (ja) | シート状プローブおよびその応用 | |
KR20070018064A (ko) | 시트형 프로브, 그의 제조 방법 및 그의 응용 | |
JP2006038874A (ja) | シート状プローブおよびその応用 | |
JP2006138777A (ja) | シート状コネクターおよびその製造方法並びにその応用 | |
TWI388843B (zh) | Flaky probe and its manufacturing method, and its application | |
JP2006140002A (ja) | シート状プローブおよびその製造方法ならびにその応用 | |
JP2006098315A (ja) | シート状プローブおよびその製造方法ならびにその応用 | |
JP2007121089A (ja) | シート状プローブおよびその製造方法ならびにその応用 | |
JP2005338071A (ja) | シート状プローブおよびその製造方法並びにその応用 | |
JP2005338070A (ja) | シート状プローブおよびその製造方法並びにその応用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020047018241 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003758872 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10515062 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 20038A05604 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2003758872 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020047018241 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1020047018241 Country of ref document: KR |