WO2004036611A3 - Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles - Google Patents

Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles Download PDF

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Publication number
WO2004036611A3
WO2004036611A3 PCT/KR2003/002146 KR0302146W WO2004036611A3 WO 2004036611 A3 WO2004036611 A3 WO 2004036611A3 KR 0302146 W KR0302146 W KR 0302146W WO 2004036611 A3 WO2004036611 A3 WO 2004036611A3
Authority
WO
WIPO (PCT)
Prior art keywords
neutral
neutral particle
processing apparatus
beam processing
particle beam
Prior art date
Application number
PCT/KR2003/002146
Other languages
French (fr)
Other versions
WO2004036611A2 (en
Inventor
Bong-Ju Lee
Suk-Jae Yoo
Original Assignee
Sem Technology Co Ltd
Lee Hag Joo
Bong-Ju Lee
Suk-Jae Yoo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sem Technology Co Ltd, Lee Hag Joo, Bong-Ju Lee, Suk-Jae Yoo filed Critical Sem Technology Co Ltd
Priority to AU2003269548A priority Critical patent/AU2003269548A1/en
Publication of WO2004036611A2 publication Critical patent/WO2004036611A2/en
Publication of WO2004036611A3 publication Critical patent/WO2004036611A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources

Abstract

There is provided a neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles. More specifically, there is provided a neutral particle beam processing apparatus comprising a high frequency electric power introducing part through which high frequency electric power is supplied, a plasma generating part which transforms gases from a gas injector into plasmas with the high frequency electric power, a neutral particle generating part that converts the obtained plasmas to neutral particles via collisions thereof with a heavy metal plate, and a treating part that treats the surface of a target with the neutral particle beams generated from the neutral particle generating part, wherein inclined slits or inclined holes are formed as beam penetration pathways on the heavy metal plate colliding with the plasmas.
PCT/KR2003/002146 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles WO2004036611A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003269548A AU2003269548A1 (en) 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0062648 2002-10-15
KR10-2002-0062648A KR100476903B1 (en) 2002-10-15 2002-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Publications (2)

Publication Number Publication Date
WO2004036611A2 WO2004036611A2 (en) 2004-04-29
WO2004036611A3 true WO2004036611A3 (en) 2004-06-24

Family

ID=32105580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2003/002146 WO2004036611A2 (en) 2002-10-15 2003-10-15 Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles

Country Status (3)

Country Link
KR (1) KR100476903B1 (en)
AU (1) AU2003269548A1 (en)
WO (1) WO2004036611A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555849B1 (en) 2003-11-27 2006-03-03 주식회사 셈테크놀러지 Neutral particle beam processing apparatus
KR100714898B1 (en) 2005-01-21 2007-05-04 삼성전자주식회사 Substrate processing apparatus for using neutral beam and its processing methods
KR100851902B1 (en) 2005-01-27 2008-08-13 삼성전자주식회사 An ion beam neutralizing apparatus
KR100702010B1 (en) 2005-03-07 2007-03-30 삼성전자주식회사 Reflector, substrate processing apparatus employing the same, and substrate processing methods using the same
KR100714895B1 (en) * 2005-03-15 2007-05-04 삼성전자주식회사 Reflector for generating neutral beam and substrate processing apparatus including the same
KR100722821B1 (en) * 2005-03-22 2007-05-30 성균관대학교산학협력단 Neutral beam etching system having improved reflector
US7358484B2 (en) * 2005-09-29 2008-04-15 Tokyo Electron Limited Hyperthermal neutral beam source and method of operating
CN102290314B (en) * 2011-09-26 2013-12-25 中国科学院微电子研究所 Device for producing neutral particle beam and method thereof
KR101816861B1 (en) 2016-10-21 2018-01-10 (주)제이하라 Surface treatment apparatus using plasma

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273072A (en) * 1994-03-30 1995-10-20 Rikagaku Kenkyusho Processing neutral beam generating method
JPH1083899A (en) * 1996-09-09 1998-03-31 Ebara Corp Neutral particle beam source
US20020060201A1 (en) * 2000-11-22 2002-05-23 Yeom Geun-Young Method of etching semiconductor device using neutral beam and apparatus for etching the same
JP2002289399A (en) * 2001-03-26 2002-10-04 Ebara Corp Neutral particle beam treatment apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326452A (en) * 1991-06-10 1993-12-10 Kawasaki Steel Corp Equipment and method for plasma treatment
US5519213A (en) * 1993-08-20 1996-05-21 Ebara Corporation Fast atom beam source
JP3328498B2 (en) * 1996-02-16 2002-09-24 株式会社荏原製作所 Fast atom beam source
KR100367662B1 (en) * 2000-05-02 2003-01-10 주식회사 셈테크놀러지 Hyperthermal Neutral Particle Beam Source and Neutral Particle Beam Processing Apparatus Employing the Same
KR100412953B1 (en) * 2001-11-26 2003-12-31 학교법인 성균관대학 Etching apparatus using neutral beam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273072A (en) * 1994-03-30 1995-10-20 Rikagaku Kenkyusho Processing neutral beam generating method
JPH1083899A (en) * 1996-09-09 1998-03-31 Ebara Corp Neutral particle beam source
US20020060201A1 (en) * 2000-11-22 2002-05-23 Yeom Geun-Young Method of etching semiconductor device using neutral beam and apparatus for etching the same
JP2002289399A (en) * 2001-03-26 2002-10-04 Ebara Corp Neutral particle beam treatment apparatus

Also Published As

Publication number Publication date
KR100476903B1 (en) 2005-03-17
AU2003269548A8 (en) 2004-05-04
KR20040033524A (en) 2004-04-28
AU2003269548A1 (en) 2004-05-04
WO2004036611A2 (en) 2004-04-29

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