WO2004012209A1 - Element d'evaluation de puissance de resolution spatiale dans un appareil de mesure d'image par transmission de rayons x - Google Patents

Element d'evaluation de puissance de resolution spatiale dans un appareil de mesure d'image par transmission de rayons x Download PDF

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Publication number
WO2004012209A1
WO2004012209A1 PCT/JP2003/009570 JP0309570W WO2004012209A1 WO 2004012209 A1 WO2004012209 A1 WO 2004012209A1 JP 0309570 W JP0309570 W JP 0309570W WO 2004012209 A1 WO2004012209 A1 WO 2004012209A1
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Prior art keywords
ray
layer
multilayer film
spatial resolution
ray transmission
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PCT/JP2003/009570
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English (en)
Japanese (ja)
Inventor
Shigeharu Tamura
Nagao Kamijo
Mitsuhiro Awaji
Kentaro Uesugi
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National Institute Of Advanced Industrial Science And Technology
Japan Synchrotron Radiation Research Institute
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Application filed by National Institute Of Advanced Industrial Science And Technology, Japan Synchrotron Radiation Research Institute filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to AU2003248135A priority Critical patent/AU2003248135A1/en
Priority to JP2004524175A priority patent/JP4442728B2/ja
Publication of WO2004012209A1 publication Critical patent/WO2004012209A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters

Definitions

  • the present invention relates to an element for evaluating the spatial resolution of an apparatus for measuring an X-ray transmission image, a method for manufacturing the element, and a method for evaluating the spatial resolution of an X-ray transmission image measurement apparatus using the element.
  • High-energy X-rays are also called hard X-rays, and generally mean X-rays having an energy range of about 6 to 10 O keV.
  • a spatial resolution evaluation element for X-ray microscopy using X-rays of 6 to 3 OkeV an element in which a pattern consisting of a tantalum thin film and voids is formed on silicon nitride substrate, which is a substrate, is commercially available. I have.
  • Figure 1 shows a schematic diagram of commercially available devices. This device usually has a thickness of about 0.5 HI. Using this device, it is possible to measure the spatial resolution up to about 0.1 m for devices using X-rays of 6 to 3 O keV. .
  • the energy of the X-rays used is as high as about 50 keV or more, the spatial resolution cannot be measured because the pattern portion (internal thin film portion) cannot shield the X-rays.
  • This device is formed using the microfabrication technology used when manufacturing semiconductors. Therefore, it is technically difficult to make the element thick enough to block high-energy X-rays.
  • a product in which a pattern is formed by embedding metal or the like in acrylic resin is also commercially available.
  • the spatial resolution that can be measured by this element is about 1 band, which is insufficient to measure the spatial resolution of a minute area.
  • the size of the element is as large as about 20 cm 3 , which makes it difficult to use and may not be used depending on the device. Disclosure of the invention The present invention has been made in view of the problems of the related art, and has an element used for measuring a spatial resolution of an apparatus that measures an X-ray transmission image using a wide range of high-energy X-rays.
  • a main object of the present invention is to provide a method for manufacturing an element and a method for evaluating spatial resolution using the element.
  • the present inventor has found, as a result of earnest research, that an element having a specific multilayer film can achieve the above object, and has completed the present invention.
  • the present invention provides an element for evaluating the spatial resolution of an apparatus for measuring an X-ray transmission image described below, a method for manufacturing the same, and an evaluation of the spatial resolution of an apparatus for measuring an X-ray transmission image using the element. According to the method.
  • An element for evaluating the spatial resolution of an apparatus for measuring an X-ray transmission image which is a multilayer film in which an X-ray blocking layer and an X-ray transmission layer are alternately laminated on a prismatic substrate or a fine-line substrate. And an extinction coefficient of the X-ray blocking layer at the wavelength of X-rays to be used, which is at least three times the extinction coefficient of the X-ray transmission layer.
  • the X-ray blocking layer consists of (1) a layer consisting of at least one element selected from the group consisting of gold, silver, copper, molybdenum, tantalum, nickel, chromium, titanium, germanium, platinum and tungsten Or (2) a layer made of a compound containing at least 50% by weight of at least one element selected from the group consisting of gold, silver, copper, molybdenum, nickel, nickel, chromium, titanium, germanium, platinum and tungsten. 4. The device according to any one of the above items 1 to 3, wherein
  • the X-ray transmission layer is composed of (1) a layer composed of a simple substance of at least one element selected from the group consisting of aluminum, carbon, gay and magnesium, or (2) aluminum, carbon, gay 4.
  • An X-ray blocking layer containing an element with an atomic number of 21 or more and an X-ray transmissive layer containing an element with an atomic number of 15 or less are alternately deposited by using an evaporation source of 10.2 or more. 10. The method for producing an element according to any one of the above 7 to 9.
  • slits are provided between the evaporation source and the substrate to reduce the incidence of obliquely incident evaporation components and wraparound evaporation components, and the evaporation components that have passed through the slits are used to form multilayers.
  • 37. The method for producing a device according to any one of items L0 to L37, wherein a film is deposited. '' Device of the present invention
  • the spatial resolution evaluation element of the present invention has a multilayer film in which an X-ray blocking layer and an X-ray transmitting layer are alternately laminated on a prismatic base material or a fine linear base material, and the extinction coefficient of the X-ray blocking layer However, at the wavelength of the X-ray used, it is about three times or more the extinction coefficient of the X-ray transmission layer.
  • the X-ray transmitting layer is not particularly limited as long as the extinction coefficient of the X-ray blocking layer is at least about three times the extinction coefficient of the X-ray transmitting layer at the wavelength of the X-ray used. It is preferably about 5 times or more, more preferably about 10 times or more. The upper limit is not particularly limited, but is about 100 times or less.
  • the X-ray blocking layer usually contains an element having an atomic number of 20 or more, preferably elements 21 to 83, more preferably elements 22 to 74. Alternatively, a group 1 element, a group 3 to 16 element, a lanthanide, or the like is also preferable as an element contained in the X-ray blocking layer.
  • the X-ray blocking layer is usually a deposited film.
  • the X-ray blocking layer contains an element with an atomic number of 21 or Included as compounds containing at least one of these elements.
  • elements contained in the X-ray blocking layer include, for example, Group 1 elements such as rubidium; Group 3 elements such as scandium and yttrium; Group 4 elements such as titanium, zirconium and hafnium; vanadium, niobium and tantalum Group 5 element; Group 6 element such as chromium, molybdenum, and tungsten; Group 7 element such as manganese; Group 8 element such as iron; Group 9 element such as cobalt and iridium; Group 10 element such as nickel, palladium, and platinum Group 11 elements, such as gold, silver, and copper; Group 12 elements, such as zinc and copper cadmium; Group 13 elements, such as indium; Group 14 elements, such as germanium, tin, and lead, having an atomic number of 21 or more; Examples include Group 15 elements having an atomic number of 21 or more, such as antimony and bismuth; and Group 16 elements having an atomic number of 21 or more, such as selenium and tellurium. Among them, Group 1 elements such
  • elements contained as compounds in the X-ray blocking layer include Group 1 elements such as rubidium; Group 3 elements such as scandium and yttrium; Group 4 elements such as titanium, zirconium, and hafnium; vanadium, niobium, and tantalum.
  • gold, silver, 1 Group 1 element such as copper are preferred.
  • conjugated product included in the X-ray blocking layer include, for example, alloys such as nichrome, copper-aluminum alloy, and titanium-aluminum alloy.
  • alloys such as nichrome, copper-aluminum alloy, and titanium-aluminum alloy.
  • an X-ray blocking layer is made of a conjugate containing an element having an atomic number of 21 or more, the content of the element having an atomic number of 21 or more contained in the compound is usually 50% by weight or more, Preferably, it is about 60 to 80% by mass.
  • the X-ray transmission layer usually contains an element having an atomic number of 15 or less, and preferably contains carbon, nitrogen, oxygen, magnesium, aluminum, and silicon.
  • the X-ray transmission layer is usually a deposited film.
  • an element with an atomic number of 15 or less can be used either alone or as an element. It is included as a compound containing at least one element.
  • the compound contained in the X-ray transmission layer is a compound containing an element having an atomic number of 15 or less.
  • the compound contained in the X-ray transmission layer is a compound containing an element having an atomic number of 15 or less.
  • at least one compound selected from the group consisting of carbon, nitrogen, oxygen, aluminum, magnesium, and silicon examples include compounds containing various elements, more specifically, oxides such as silicon dioxide; carbides such as silicon carbide and boron carbide; and nitrides such as gay nitride and boron nitride. .
  • the combination of the X-ray blocking layer and the X-ray transmitting layer is particularly limited as long as the extinction coefficient of the X-ray blocking layer is at least about three times the extinction coefficient of the X-ray transmitting layer at the X-ray wavelength used.
  • a combination of a copper layer-aluminum layer, a copper layer-a-carbon layer, a copper layer-a-carbon layer, a copper layer-a-carbon layer, a silver layer-a-silicon layer, a silver layer-a carbon layer, etc. is exemplified. be able to.
  • the shape of the base material included in the device is not particularly limited as long as the multilayer film is laminated, and examples thereof include a thin line shape and a prism shape.
  • a fine wire substrate it usually has a multilayer film in which an X-ray blocking layer and an X-ray transmitting layer are alternately laminated concentrically around the fine wire substrate.
  • the diameter of the fine wire substrate is usually about 10 to 200 m, preferably about 50 to 100 ID.
  • each layer is not particularly limited, and can be appropriately set according to the type of element used and the level of desired spatial resolution.
  • the thickness of each layer is usually about 0.01 to 2 m, preferably about 0.05 to 1 mm.
  • each layer to be laminated on the element may be the same, or may be gradually changed.
  • FIG. 2 shows an element in the case where a thin wire-shaped substrate is used and the thickness of the layer is gradually reduced from the center to the outside. Contrary to FIG. 2, the thickness may be gradually increased from the center to the outside. In the case of a prismatic substrate, the thickness of the layer may gradually decrease as the distance from the substrate increases, or may increase gradually.
  • the thickness of a layer is gradually changed in a multilayer film
  • sets of X-ray blocking layers and X-ray transmitting layers having the same thickness are set as one set, and sets of gradually different thicknesses are laminated.
  • Layer thickness The width of the change (the width of gradually decreasing the thickness / the width of increasing the thickness) can also be set as appropriate according to the desired level of spatial resolution. For example, if the expected resolution is 0.5 and the element with the same thickness for all layers is used, then in the range of 0.1 to 1.0 ⁇ m, about 0.1 m each The resolution can be evaluated by using 11 elements with different layer thicknesses and exchanging the elements for each measurement.
  • the thickness of the layer should be increased by about 0.1 m in the range of about 0.1 to 1.O m.
  • the resolution may be evaluated using a device in which ten sets of different X-ray blocking layers and X-ray transmitting layers are stacked. In this case, the spatial resolution can be evaluated with only one measurement.
  • the number of layers of the multilayer film is not particularly limited, and can be appropriately set according to the type of the device to be evaluated, the energy of X-rays, and the like.
  • the number of layers is usually about 4 to 40, preferably about 6 to 30.
  • the material of the substrate can be appropriately selected according to the shape of the substrate.
  • the material of the prismatic substrate is not particularly limited as long as it is a material capable of mirror polishing, and examples thereof include silicon, molybdenum, and nickel.
  • the material of the fine wire substrate is not particularly limited as long as it is a material capable of forming a fine round wire. For example, gold, aluminum, silicon-containing gold (silicon content: 1 to 3) Weight).
  • the element of the present invention may be coated with a resin such as an epoxy resin as needed. By coating with resin, the surface of the multilayer film is protected.
  • the device of the present invention can be manufactured by, for example, a method of alternately depositing thin films having different linear extinction coefficients using two or more evaporation sources and laminating a multilayer film on a substrate.
  • the base material for example, a flat base material, a fine wire base material or the like can be used.
  • the length of the fine linear substrate used in the production may be set within a range where the uniformity of the film thickness distribution is ensured by the vapor deposition method, or may be appropriately set according to an apparatus for measuring the spatial resolution. .
  • the length of the fine linear substrate used during production is usually about l to 5 cm, preferably It is preferably about l to 3 cm, more preferably about 1.5 to 2.5 cm.
  • the thickness of the flat base material is not particularly limited, but is usually about 0.5 to 2 thighs, and preferably about 0.8 to 1.2.
  • the planar shape of the planar substrate is not particularly limited, and examples thereof include a square, a rectangle, and a circle. When the planar substrate is a polygon such as a square or a rectangle, the length of one side is usually about l to 3 cm, preferably about 1.5 to 2.5 cm.
  • the method of depositing the X-ray blocking layer and the X-ray transmitting layer is not particularly limited, and a known deposition method such as a sputtering evaporation method, an electron beam evaporation method, an ion beam sputtering method, or an ion plating method can be used. Can be used. Of these, the sputtering method is preferred because the total film thickness can be increased and the stability of the deposition rate is high.
  • the evaporation source used for the evaporation is not particularly limited, and can be appropriately selected according to the kind of the desired multilayer film, the evaporation method, and the like.
  • the number of evaporation sources is not particularly limited, and may be appropriately set according to the composition of each layer. For example, when laminating layers each having the same composition as the evaporation source, a multilayer film can be manufactured by alternately using two types of evaporation sources.
  • the vapor deposition device When using a flat base material, always use a vapor deposition device that directs the base material to the used vapor deposition source.
  • a vapor deposition device that directs the base material to the used vapor deposition source.
  • the device shown in FIG. 7 can be exemplified.
  • the vapor deposition is usually performed while rotating the fine linear substrate.
  • the rotation speed of the substrate is not particularly limited, but is usually about 20 to 50 rotations per minute.
  • deposition conditions such as deposition temperature and pressure can be appropriately set according to the deposition method and the like.
  • the deposition temperature is not particularly limited and can be appropriately set according to the type of the deposition source and the like, and is usually about 80 to 120 ° C, preferably about 90 to 110 ° C.
  • a bias voltage can be applied to the substrate as needed.
  • the bias voltage is a force that can be appropriately set according to the type of the material of the multilayer film, and is usually about ⁇ 5 to ⁇ 300 V, preferably about ⁇ 5 to ⁇ 50 V.
  • the deposition rate is not particularly limited and can be appropriately set depending on the deposition method and the like, but is usually about 0.1 to 1 nni / s, and preferably about 0.1 to 0.5 nm / s.
  • the atmosphere at the time of vapor deposition is not particularly limited and depends on the type of the film to be deposited, the vapor deposition method, and the like. Can be set as appropriate.
  • inert gas (Ar, He, etc.) atmosphere under an oxidizing atmosphere (0 2, such as air) Ru can be exemplified a nitrogen atmosphere.
  • a reactive gas such as nitrogen or oxygen can be appropriately added depending on the type of a film to be deposited. More specifically, when depositing a layer containing an oxidizing substance, it can be deposited under an oxidizing atmosphere.
  • the layer can be deposited in an atmosphere containing nitrogen.
  • the content of the reactive gas such as oxygen and nitrogen is not particularly limited, but is usually about 10 to 20% by weight.
  • a slit is provided in the evaporation tank between the evaporation source and the substrate to reduce the incidence of obliquely incident evaporation components and wraparound evaporation components. It may be deposited on a flat substrate or a thin film that has already been deposited. When such a method is used, evaporation due to oblique incidence evaporation components and wraparound evaporation components can be suppressed, so that a multilayer film with less disturbance of the interface between layers can be obtained.
  • the width of the flat base material is preferably shorter than the slit width.
  • the slit width is not particularly limited as long as it is at least larger than the diameter of the fine linear substrate, but is usually about 2 to 10 strokes, preferably about 5 to 10 mm.
  • the shape of the structure provided with the slit is not particularly limited, and examples thereof include a cylindrical shape (see FIG. 8), a cylindrical shape such as a prism, and a plate shape such as a flat plate. Among these, a cylindrical shape is preferable, and a cylindrical shape is particularly preferable.
  • the slit is installed so that it can be located on a straight line connecting the evaporation source and the fine linear or planar substrate.
  • the slit is installed so that it can be opened toward the evaporation source to be used.
  • the slit is directed to the evaporation source A when using the evaporation source A, and the slit is used when the evaporation source B is used.
  • evaporation source B For example, if the slit is provided in a cylindrical structure, It is preferable to provide a means capable of rotating the above structure so as to control the slit to be directed to the evaporation source to be used.
  • a shutter between the evaporation source and the base material (for example, between the evaporation source and the slit) and close the shutter of the unused evaporation source.
  • the number of shutters is not particularly limited. For example, one shirt can be provided for each evaporation source.
  • the thickness of each layer of the multilayer film can be determined, for example, by controlling the time for depositing each layer while keeping the deposition rate constant, by installing a film thickness sensor in a deposition apparatus and monitoring the amount of deposition. If necessary, it can be controlled by a method of performing evaporation while controlling a slit, a shutter, and the like.
  • the device When a flat base material is used as the base material, the device is sliced so that the thickness of the element becomes a desired thickness. If necessary, it may be further processed by polishing or the like. Thinning is usually performed by a method such as cutting a flat base material on which a multilayer film is deposited in the cross-sectional direction of the multilayer film (see FIG. 9).
  • the planar substrate is usually formed into a prismatic shape by thinning.
  • the substrate may be fixed after being embedded in a low-melting alloy (such as a tin-lead alloy).
  • a fine wire-shaped substrate When a fine wire-shaped substrate is used as the substrate, it may be further processed by thinning, polishing or the like, if necessary. For example, when evaluating an X-ray CT apparatus or the like, it can be used without processing, but it may be cut to a desired thickness. More specifically, for example, a thin wire substrate on which a multilayer film is deposited is embedded and fixed in a low-melting alloy (such as a tin-lead alloy), and is perpendicular to the rotation axis (the center line of the thin wire substrate). After slicing by cutting into pieces, it may be polished to a desired thickness.
  • a low-melting alloy such as a tin-lead alloy
  • the device to be evaluated is a device such as an X-ray microscope for fixing a sample and measuring an X-ray transmission image
  • a flaked element can be suitably used regardless of the shape of the substrate. If the mechanical strength of the thinned element is low, the element may be mounted on a support (see Fig. 11). Examples of the material of the support include resin such as acryl and graphite.
  • the device to be evaluated is a device that rotates the sample and measures the X-ray transmission image, such as an X-ray CT, for example, an element (Fig. 3) with a multi-layered film on a fine wire substrate Can be used without thinning.
  • the thickness of the element depends on the type of the target device, It can be set appropriately according to the energy of X-rays and the like. For example, when evaluating the spatial resolution of a device such as an X-ray microscope that fixes and measures a sample and is equipped with an X-ray of about 30 to 100 keV, regardless of the shape of the base material, The thickness is usually about 10 to 100 mm, and preferably about 20 to 50 xm.
  • the thickness of the element is usually It is about 5 to 20 thighs, preferably about 10 to 15 mm.
  • the element After forming into a desired shape by performing thinning, polishing, or the like as necessary, the element may be covered with a resin such as an epoxy resin as necessary, in order to protect the surface of the multilayer film.
  • a resin such as an epoxy resin as necessary
  • the element may be provided on a support (see FIG. 11).
  • the material of the support base include a resin such as acryl and graphite. Evaluation method
  • the transmitted image is usually detected by a detector (e.g., c c
  • the direction in which the element is irradiated with X-rays is not particularly limited as long as a transmission image of the cross-sectional structure of the multilayer film can be obtained, and can be appropriately selected according to an apparatus for evaluating the resolution.
  • a device such as an X-ray microscope that fixes and analyzes a sample
  • X-rays are usually irradiated in the thickness direction of the resolution evaluation element (see FIGS. 2 and 10).
  • the X-rays are normally emitted perpendicular to the thickness direction of the multilayer film (see Fig. 3).
  • the device that can evaluate the spatial resolution using the element of the present invention is not particularly limited as long as it is a device that uses X-rays such as synchrotron radiation (SR) as a light source.
  • X-rays such as synchrotron radiation (SR)
  • SR synchrotron radiation
  • an apparatus using high energy X-rays having an energy range of about 6 to 100 keV can be exemplified.
  • the device of the present invention has a 3 009570
  • an element for measuring the spatial resolution of an apparatus using X-rays of about or more, preferably about 30 to 100 keV, more preferably 50 to 100 keV.
  • devices such as an X-ray microscope and an X-ray CT device can be exemplified.
  • the transmission image is displayed in dark and black (black and white) so that the X-ray blocking layer is dark (black) and the X-ray transmission layer is bright (white).
  • the transmission image display method is not particularly limited. A display method in which black and white are reversed in the display method, a pseudo-color display method, or the like may be used.
  • the minimum line width (which may be either the X-ray blocking layer or the transmission layer) at which the modulation depth (MTF) of the two layers in the transmission image is 5% or more is acceptable. It is the spatial resolution of the device.
  • the spatial resolution that can be measured using the device of the present invention varies depending on the intensity of the irradiated X-rays, but a spatial resolution of usually about 0.05 to 2 can be measured.
  • the invention's effect varies depending on the intensity of the irradiated X-rays, but a spatial resolution of usually about 0.05 to 2 can be measured.
  • the spatial resolution of the apparatus which measures the X-ray transmission image using a wide range of high energy X-rays can be measured.
  • a spatial resolution of about 0.05 to 2 / m can be measured.
  • a device that uses high-energy X-rays of about 30 to 100 keV, for which no effective measurement method has been available can evaluate a spatial resolution of about 0.05 to 2 m.
  • Figure 1 is a schematic diagram of an example of a commercially available resolution measuring element (top view and side view).
  • FIG. 2 is an example of a pattern diagram of the multilayer film resolution evaluation element of the present invention.
  • X-rays are usually emitted from the direction shown in Fig. 2.
  • FIG. 3 is an example of a pattern diagram of the multilayer film resolution evaluation device of the present invention.
  • a device that analyzes while rotating a sample such as an X-ray CT device
  • X-rays are usually emitted from the direction shown in Fig. 3.
  • FIG. 4 is a scanning electron microscope image of a cross section of the multilayer film resolution evaluation element obtained in Example 1.
  • FIG. 5 is a scanning electron microscope image of a cross section of the multilayer film obtained in Example 2. 3 shows a part of a multilayer film pattern in a cross section.
  • FIG. 6 is a view showing a transmission image of the element of Example 3 measured using an X-ray CT apparatus.
  • FIG. 7 is a schematic diagram of the vapor deposition apparatus used in Example 3.
  • FIG. 8 is a schematic diagram of a vapor deposition apparatus provided with a cylindrical slit.
  • FIG. 9 is a diagram schematically showing that the element of the present invention is manufactured by slicing a flat base material provided with a multilayer film.
  • FIG. 10 is an example of a pattern diagram of the multilayer film resolution evaluation element of the present invention.
  • X-rays are usually emitted from the direction shown in Figure 1 ⁇ .
  • FIG. 11 is a diagram schematically showing an example of the device of the present invention provided with a support.
  • FIG. 12 is a view showing a transmission image of the element of Example 2 measured using an X-ray microscope apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
  • a multilayer film was manufactured by alternately laminating 70 layers of copper and aluminum on a fine line-shaped substrate (material: gold, diameter: 100 microns, length: 4 cm) by the spattering evaporation method. Copper and aluminum were used as evaporation sources.
  • the deposition conditions were as follows: under an argon atmosphere (pressure: 0.2 Pa), the size of the deposition source: 75 mm in diameter, a fine line, the distance between the base material and the deposition source: 50 mm, and the deposition rate: I nmZs there were.
  • the power applied to the evaporation source was 400 V for copper and aluminum, respectively.
  • Fine line shape The rotation speed of the substrate was kept at 15 rotations per minute.
  • the film thickness was observed with a quartz crystal film thickness monitor, and the film thickness was controlled by opening and closing the shirt.
  • a device for evaluating the resolution was manufactured.
  • the thickness of the device (the thickness in the direction perpendicular to the cross section of the multilayer film) was 30.
  • FIG. 4 shows a scanning electron microscope image of a cross section of the obtained multilayer evaluation device. Each film thickness of the obtained multilayer film was 0.3 m.
  • Example 2
  • each layer in the multilayer film was gradually changed in a range of 0.3 im to im by 0.1 lm so that the thickness of each layer was gradually reduced toward the outside from the fine linear substrate.
  • the other conditions were the same as in Example 1 to produce a multilayer film.
  • FIG. 5 shows a scanning electron microscope image of a cross section of the obtained multilayer evaluation device.
  • a thin wire base material material: aluminum, diameter: 25 m, length: 4 cm
  • a vapor deposition conditions were as follows: under an argon atmosphere (pressure: 0.2 Pa), the size of the vapor deposition source: the diameter between the fine linear substrate and the vapor deposition source: 50 mm, and the vapor deposition rate: 1 MI / S.
  • the voltage applied to the evaporation source was 400 V for each of ⁇ and aluminum.
  • the rotation speed of the fine linear substrate was kept at 15 rotations per minute.
  • the film thickness was observed by a crystal monitor while vibrating with a quartz crystal, and when the desired film thickness was reached, the shutter was opened and closed to control the evaporation source.
  • the obtained device was cut so as to have a thickness of lcm, and a cross-sectional view of the multilayer film was observed using an X-ray CT apparatus constructed on the beam line of the large synchrotron radiation SMng-8 described above: BL47XL. .
  • the energy of the X-ray provided in the X-ray CT device was 20 keV.
  • Each film thickness of the multilayer film was as follows.
  • FIG. 6 shows a transmission image of a cross section of the obtained element for evaluating spatial resolution.
  • the copper layer which is the X-ray shielding layer
  • the aluminum layer which is the X-ray transparent layer
  • dark black
  • the light and darkness (black and white) of both are clear, it was found that this X-ray CT apparatus had a spatial resolution of at least 2 ⁇ .
  • MTF was 24%.

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  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention concerne un élément utilisé dans la mesure de la puissance de résolution spatiale d'un appareil destiné à mesurer une image par transmission de rayons X au moyen de rayons X de haute énergie sur une large plage, son procédé de fabrication et un procédé d'évaluation de la puissance de résolution spatiale au moyen de cet élément. L'élément servant à évaluer la puissance de résolution spatiale d'un appareil de mesure d'une image par transmission de rayons X comprend un film à couches multiples dans lequel des couches de blocage des rayons X et des couches de transmission des rayons X sont empilées alternativement en couches sur un matériau de base prismatique ou sur un matériau de base à ligne mince, la couche bloquant les rayons X possédant une absorbance au moins égale à trois fois celle de la couche transmettant les rayons X à la longueur d'onde des rayons X de travail. L'invention concerne aussi un procédé de fabrication de cet élément et un procédé d'évaluation de la puissance de résolution spatiale au moyen de cet élément.
PCT/JP2003/009570 2002-07-30 2003-07-29 Element d'evaluation de puissance de resolution spatiale dans un appareil de mesure d'image par transmission de rayons x WO2004012209A1 (fr)

Priority Applications (2)

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AU2003248135A AU2003248135A1 (en) 2002-07-30 2003-07-29 Spatial revolving power evaluation element in x-ray transmission image measuring apparatus
JP2004524175A JP4442728B2 (ja) 2002-07-30 2003-07-29 Ｘ線透過像測定装置における空間分解能評価素子

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JP2002221116 2002-07-30
JP2002-221116 2002-07-30

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006082038A (ja) * 2004-09-17 2006-03-30 Hokkaido Univ 薄膜積層構造体の製造方法、薄膜積層構造体、機能素子、機能素子の製造方法、薄膜積層構造体の製造装置およびヘテロ構造体
JP2006279036A (ja) * 2005-03-29 2006-10-12 Asml Netherlands Bv 多層スペクトル純度フィルタ、このようなスペクトル純度フィルタを備えたリソグラフィ装置、デバイス製造方法及びそれによって製造されたデバイス
JP2007139547A (ja) * 2005-11-17 2007-06-07 Okayama Univ 放射線量検知具
EP2887360A1 (fr) * 2013-12-13 2015-06-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de mesure de la résolution spatiale d'un système d'imagerie à rayons X, mire de résolution et procédé de fabrication de la mire
JP2018130144A (ja) * 2017-02-13 2018-08-23 トヨタ自動車株式会社 Ｘ線ｃｔ分解能評価装置
RU192950U1 (ru) * 2019-07-31 2019-10-08 Общество с ограниченной ответственностью Совместное русско- французское предприятие "СпектрАп" Штриховая рентгеновская мира
JP2020012752A (ja) * 2018-07-19 2020-01-23 株式会社神戸製鋼所 スポット溶接部の検査方法

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JPH0556954A (ja) * 1991-09-05 1993-03-09 Hitachi Medical Corp Ｘ線ｃｔ装置の積層型空間分解能評価用器具
JP2001120532A (ja) * 1999-10-22 2001-05-08 Toshiba Fa Syst Eng Corp Ｃｔ装置の評価用ファントムとこれを用いた評価方法および評価用ファントムの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0556954A (ja) * 1991-09-05 1993-03-09 Hitachi Medical Corp Ｘ線ｃｔ装置の積層型空間分解能評価用器具
JP2001120532A (ja) * 1999-10-22 2001-05-08 Toshiba Fa Syst Eng Corp Ｃｔ装置の評価用ファントムとこれを用いた評価方法および評価用ファントムの製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006082038A (ja) * 2004-09-17 2006-03-30 Hokkaido Univ 薄膜積層構造体の製造方法、薄膜積層構造体、機能素子、機能素子の製造方法、薄膜積層構造体の製造装置およびヘテロ構造体
JP2006279036A (ja) * 2005-03-29 2006-10-12 Asml Netherlands Bv 多層スペクトル純度フィルタ、このようなスペクトル純度フィルタを備えたリソグラフィ装置、デバイス製造方法及びそれによって製造されたデバイス
JP4685667B2 (ja) * 2005-03-29 2011-05-18 エーエスエムエル ネザーランズ ビー．ブイ． 多層スペクトル純度フィルタ、このようなスペクトル純度フィルタを備えたリソグラフィ装置及びデバイス製造方法
JP2007139547A (ja) * 2005-11-17 2007-06-07 Okayama Univ 放射線量検知具
JP4701353B2 (ja) * 2005-11-17 2011-06-15 国立大学法人 岡山大学 放射線検知具および放射線検知具の製作キット
EP2887360A1 (fr) * 2013-12-13 2015-06-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de mesure de la résolution spatiale d'un système d'imagerie à rayons X, mire de résolution et procédé de fabrication de la mire
US9754696B2 (en) 2013-12-13 2017-09-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Resolution test chart for X-ray imaging system and method of fabrication
JP2018130144A (ja) * 2017-02-13 2018-08-23 トヨタ自動車株式会社 Ｘ線ｃｔ分解能評価装置
JP2020012752A (ja) * 2018-07-19 2020-01-23 株式会社神戸製鋼所 スポット溶接部の検査方法
RU192950U1 (ru) * 2019-07-31 2019-10-08 Общество с ограниченной ответственностью Совместное русско- французское предприятие "СпектрАп" Штриховая рентгеновская мира

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JPWO2004012209A1 (ja) 2006-01-12
JP4442728B2 (ja) 2010-03-31
AU2003248135A8 (en) 2004-02-16
AU2003248135A1 (en) 2004-02-16

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