WO2003092052A1 - Packaging method and packaging system - Google Patents

Packaging method and packaging system Download PDF

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Publication number
WO2003092052A1
WO2003092052A1 PCT/JP2003/005119 JP0305119W WO03092052A1 WO 2003092052 A1 WO2003092052 A1 WO 2003092052A1 JP 0305119 W JP0305119 W JP 0305119W WO 03092052 A1 WO03092052 A1 WO 03092052A1
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WIPO (PCT)
Prior art keywords
cleaning
bonded
heating
objects
bonding
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Application number
PCT/JP2003/005119
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French (fr)
Japanese (ja)
Inventor
Akira Yamauchi
Original Assignee
Toray Engineering Co., Ltd.
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Publication date
Application filed by Toray Engineering Co., Ltd. filed Critical Toray Engineering Co., Ltd.
Priority to AU2003235375A priority Critical patent/AU2003235375A1/en
Publication of WO2003092052A1 publication Critical patent/WO2003092052A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101—Chamber
    • H01L2224/75102—Vacuum chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/79—Apparatus for Tape Automated Bonding [TAB]
    • H01L2224/7901—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Definitions

  • the present invention relates to a mounting method and a mounting apparatus for bonding bonded surfaces to each other after cleaning the bonded surfaces with an energy wave or energy particles.
  • the cleaning effect is improved while suppressing charge-up damage to the bonded objects during cleaning.
  • the present invention relates to a mounting method and a mounting apparatus that can perform low-temperature bonding and improve mounting accuracy.
  • a technique is known in which the joined surfaces are joined after the joining surfaces have been cleaned with energy waves or energetic particles.
  • silicon wafer bonding is performed by cleaning with an energy wave or energy particle such as an ion beam or an atomic beam in a vacuum at room temperature prior to bonding.
  • a method of joining each other at room temperature is disclosed. In this method, oxides, organic substances, etc. on the bonding surface of a silicon wafer are removed by etching with the beam described above to form surfaces with silicon atoms, and the surfaces have a high bonding force between the atoms. Can be joined at room temperature.
  • Heating during bonding causes thermal expansion of the object to be bonded and its holding means, which causes alignment and bonding errors and distortion, and has the side effect of deteriorating mounting accuracy. Yes.
  • the object of the present invention is to achieve a sufficiently high cleaning effect by adding another element during cleaning even when the energy wave or energy particle intensity is lowered to prevent the occurrence of charge-up damage.
  • the mounting method according to the present invention is a mounting method in which at least one bonded object is cleaned and then the bonded objects are bonded to each other. It consists of a method characterized by irradiating an energy wave or energetic particles on the joint surface while heating. That is, heating is used in combination with cleaning with energy waves or energy particles.
  • the cleaning of the joint surface by the irradiation of energy waves or energy particles is mainly based on the physical action that the contamination layer on the surface is removed by the etching effect of the irradiated energy waves or energy particles. If the irradiation energy intensity is increased to increase the amount of charge, a large amount of charge tends to accumulate on the surface, and if it flows into the circuit of the object to be joined made of a semiconductor, etc., the circuit may be damaged. There is a risk of up-damage.
  • heating is used at the time of cleaning, and the surface of the bonding surface cleaned by heating is in a solid phase diffusion state in which the movement of molecules of the metal or metal compound is more active. Contaminant molecules to be removed will appear on the surface one after another, and even weak energy waves or energetic particles will be etched sufficiently well.
  • Ar plasma is used for this etching method. Used.
  • the bonded molecules can be easily separated from each other, so even from this aspect, even weak energy waves or energetic particles can be removed sufficiently satisfactorily. .
  • the surface etching effect by energy waves or energetic particles is enhanced physically by combined use of heating.
  • the contamination layer on the surface has been sufficiently removed by the above cleaning, so that no special heating is required during alignment or bonding following cleaning, and bonding at room temperature or a temperature close to that is possible. Become. As a result, it is not affected by the thermal expansion associated with conventional heating, and can be mounted on a very high precision submicron table, for example, about ⁇ 0.2 im.
  • the heating temperature used in combination with the cleaning may be appropriately determined according to the heat resistance of the object to be bonded and the amount of residual contaminant layer allowed for the object to be bonded. It is preferable that the temperature is 100 ° C or higher, which is likely to cause moisture to escape, and contamination in the chamber tends to re-adhere if activated too much by heating. It can select suitably from within the range.
  • the cleaning is preferably performed in a reduced pressure atmosphere.
  • a reduced-pressure atmosphere By using a reduced-pressure atmosphere, the cleaning effect by energy waves or energy particles themselves can be enhanced, and by using heating as in the present invention, a sufficiently excellent cleaning effect can be obtained even at low energy levels. Become.
  • the above cleaning is performed by using an inert gas (for example, argon gas), a non-oxidizing gas (for example, nitrogen gas), a reducing gas (for example, hydrogen gas), a replacement gas (for example, a gas having a substituent such as a fluorine group).
  • an inert gas for example, argon gas
  • a non-oxidizing gas for example, nitrogen gas
  • a reducing gas for example, hydrogen gas
  • a replacement gas for example, a gas having a substituent such as a fluorine group.
  • the surface is activated by the heating to improve the reduction and substitution function, and hydrogen and carbon atoms in the contamination layer become H 2 0 and C 0 2 gas and are easily removed.
  • an inert gas eg, argon gas
  • surface molecules are likely to jump out by heating.
  • the cleaning ability is improved.
  • the objects to be joined can be cooled and aligned, and then the objects to be joined can be joined together.
  • air cooling or cooling using a fluid refrigerant for example, water cooling
  • Cooling makes it possible to completely eliminate the effects of thermal expansion during alignment and bonding in the conventional technology, and achieves high-precision mounting without distortion.
  • the cooling of the bonded product after cleaning for example, it can be cooled to room temperature.
  • normal temperature means, for example, solder melting temperature (for example, about 180 ° C.) or lower and room temperature, and considering the removal of the effects of thermal expansion, a temperature range from room temperature to about 100 ° C. It is preferable to cool down to
  • such a mounting method according to the present invention provides a sufficiently high cleaning effect while preventing the occurrence of charge-up, so that the occurrence of charge-up damage must be avoided.
  • it is suitable for semiconductor mounting.
  • the cleaning process with heating, the alignment process of the bonded object after cleaning, and the bonding process of the bonded objects after alignment are performed in one chamber. You can also In this way, a series of processes from cleaning to bonding can be performed efficiently and quickly in a single mounting apparatus.
  • a mounting apparatus is a mounting apparatus that joins objects to be joined together after cleaning a joining surface of at least one object to be joined, and heats the object to be joined while applying a wave of energy or It has a heating / cleaning means for cleaning the joint surface by irradiating energetic particles.
  • the mounting apparatus preferably further includes means for reducing the atmosphere during cleaning.
  • the atmosphere during cleaning is inert gas, non-oxidizing gas, It is preferable to have a gas supply means for providing an atmosphere of either reducing gas or replacement gas. Furthermore, it is also preferable to have a means for cooling the cleaned object to be joined.
  • This mounting apparatus is particularly effective when the object to be cleaned is a semiconductor because a sufficiently high cleaning effect can be obtained while preventing the occurrence of charge up. Further, in this mounting apparatus, the heating and cleaning can be performed in one chamber so that the cleaning with heating, the alignment of the objects to be bonded after the cleaning, and the bonding of the objects to be bonded after the alignment can be performed in one chamber. Means, alignment means, and joining means may be provided.
  • plasma is particularly preferable as the energy wave or energy particle to be used.
  • the means for holding the object serves as both the heating means and the plasma generating electrode. It can be a structure.
  • At least one object holding means includes an electrostatic chuck means for holding the object to be electrostatically held.
  • the object to be bonded can be held without any problem even in a vacuum.
  • the energy wave or the energy level of the energy particle to be irradiated is used because the heating is used together with the energy wave or the cleaning of the bonding surface with the energy particle.
  • the surface can be activated by heating to obtain a sufficiently high cleaning effect while preventing the occurrence of damage due to lowering of the joints. Joining without heating at or near room temperature can do.
  • since the energy level can be increased, equipment costs and running costs can be reduced. By preventing the occurrence of charge-up damage, the reliability of bonded products can be ensured, and extremely high mounting accuracy can be achieved through alignment and bonding at room temperature without heating.
  • FIG. 1 is a schematic configuration diagram showing a cleaning process of a mounting apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic configuration diagram showing the alignment process in the mounting apparatus of FIG.
  • FIG. 3 is a schematic configuration diagram showing a bonding process in the mounting apparatus of FIG.
  • FIG. 1 shows a mounting apparatus 1 according to an embodiment of the present invention.
  • the case where one is the chip 2 and the other is the substrate 3 is illustrated as an object to be bonded to each other.
  • a plurality of electrodes 4 (two electrodes 4 are shown in FIG. 1) are provided on the chip 2, and a corresponding electrode 5 is provided on the substrate 3.
  • the chip 2 is held by a chip holding means 6 as one object holding means, and the substrate 3 is held by a substrate holding means 7 as the other object holding means.
  • the chip holding means 6 can be adjusted in the Z direction (vertical direction), and the substrate holding hand 7 is positioned in the X, Y direction (horizontal direction) and Z or the rotational direction (0 direction). It can be adjusted.
  • the substrate holding means 7 as described above is generally mounted so that it can be translated and rotated or rotated, but if necessary, it may be mounted in a combination of lifting and lowering (moving in the Z direction).
  • the chip holding means 6 side may be in the form of an apparatus capable of performing not only the lifting and lowering operation, but also the parallel movement and rotation or rotation.
  • the chip 2 includes, for example, all IC chips, semiconductor chips, optical elements, surface mount components, wafers, and the like on the side to be bonded to the substrate 3 regardless of the type and size.
  • the substrate 3 includes, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like on the side bonded to the chip 2 regardless of the type and size.
  • the portion that directly holds the chip 2 in the chip holding means 6 and the portion that directly holds the substrate 3 in the substrate holding means 7 are configured in the electrode tools 8 and 9, respectively, for generating plasma. It is configured to function as an electrode. These electrode tools 8 and 9 are connected to a plasma generation power source 10 so that the polarities can be switched alternately, and the cleaning plasma is applied to the bonding surface of the chip 2 and the bonding surface of the substrate 3 between the electrode tools 8 and 9. 1 1 can be irradiated.
  • the chip holding means 6 has a built-in heater 12 as a heating means. When the joining surface of the chip 2 is washed by the plasma, the tip 2 (the joining surface) can be heated. ing.
  • the substrate holding means 7 has a built-in heater 13 as a heating means so that the substrate 3 (the bonding surface) can be heated when the bonding surface of the substrate 3 is cleaned by the plasma. It is summer.
  • the alignment shown in FIG. 2 and the joining shown in FIG. 3 described later are performed not in a single chamber, but in a relative manner so that the bonding can be performed in one chamber.
  • a local chamber 14 is provided so that the chip 2 and the substrate 3 arranged in this manner and the periphery thereof can be substantially sealed locally.
  • the chamber 14 is fixed to the chip holding means 6 side, and the lower side is composed of an elastic member 15 that can be expanded and contracted, and the sealed space 16 can also be formed by being in close contact with the substrate holding means 7 side. It ’s like that.
  • a vacuum pump 17 7 ′ as a decompression means is connected to the chamber 14, and the operation of the vacuum pump 17 causes the inside of the sealed space 16 surrounded by the chamber 14 during the cleaning, A predetermined reduced-pressure atmosphere can be obtained.
  • the inert gas supply means 18 is also connected to the chamber 14 in order to make the inside of the chamber 14 an inert gas atmosphere, particularly an argon gas atmosphere, during the cleaning with the plasma. .
  • the air-cooling cooling means 19 and 20 are provided so that the temperature of the chip 2 and the substrate 3 can be quickly and forcibly lowered. Built in the back side of 1 2 and 1 3.
  • the bonding surface between the chip 2 and the substrate 3 is subjected to plasma cleaning with heating before alignment and bonding.
  • Heating activates the surface of the cleaning surface to a solid-phase diffusion state, and plasma is irradiated in this state, so even if the energy level of the plasma itself is kept low, excellent etching for removing the contamination layer An effect is obtained, and a high cleaning effect is obtained in which the contamination layer is sufficiently removed without causing charge-up damage. That is, high enough to enable room-temperature bonding at the atomic level on the bonding surface A cleaning effect is obtained.
  • the presence of air is suppressed to a sufficiently low level under a reduced pressure atmosphere, and plasma cleaning is performed in an argon gas atmosphere, so that plasma is easily generated and cleaned efficiently.
  • the intensity of the generated plasma can be easily and accurately set to the desired intensity, that is, charged up. The strength can be controlled so as not to cause damage.
  • air-cooled cooling means After plasma cleaning with such heating, in this embodiment, air-cooled cooling means
  • 1 9 and 20 are used to cool the heated chip 2 and substrate 3 to room temperature or close to the same temperature, and in the same chamber 14, the alignment process shown in FIG. 2 and the bonding process shown in FIG. Is done.
  • the alignment uses the infrared power mellar inserted downward as the recognition means 21, and reads the recognition marks on the substrate 3 side and the chip 2 side, This is done by controlling the position on the substrate holding means 7 side so that the position falls within a predetermined accuracy range.
  • the temperature of the chip 2 and the substrate 3 and their holding means 6 and 7 are lowered, so that the problem of deterioration in accuracy due to thermal expansion is avoided, and high-precision alignment is possible.
  • a member that can transmit infrared rays to the surface of the substrate holding part on the substrate holding means 7 side Is provided over the mark reading range, and the range is configured so that the position adjusting means of the substrate holding means 7 is not obstructed, so that both recognition markers attached to the substrate 3 side and the chip 2 side from below are provided. It is possible to read a single message.
  • the chip 2 is lowered together with the chip holding means 6, and the electrode 4 is pressure-bonded to the electrode 5 of the substrate 3 to join them together.
  • the bonding surface that is, the surface of the electrode 4 of the chip 2 and the surface of the electrode 5 of the substrate 3 are maintained in a state in which the contamination layer is well removed by the plasma cleaning accompanied by the heating.
  • the energy level of the irradiated energy waves or energy particles is lowered to prevent the occurrence of charge-up damage, while the surface is removed by heating.
  • a sufficiently rich cleaning effect can be obtained. Therefore, it becomes possible to bond at room temperature or near that without heating. Extremely high mounting accuracy can be achieved by alignment and bonding at room temperature without heating. Also, since the energy level can be lowered, the equipment cost and running cost can be reduced. Furthermore, the reliability of bonded products can be improved by preventing the occurrence of charge-up damage.
  • the mounting method and the mounting apparatus according to the present invention can be applied to any mounting that involves cleaning of the bonding surface with energy waves or energy particles, and in particular, can be bonded with high accuracy without heating at room temperature or a temperature close thereto. Suitable for desired implementation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning In General (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A packaging method and a packaging system for bonding articles to each other after cleaning the bonding face of at least one article, characterized in that cleaning is performed by irradiating the bonding face with an energy wave or energy particles while heating. Since occurrence of charge up damage can be prevented while attaining a sufficiently high cleaning effect, alignment and bonding can be carried out at normal temperature or a slightly lower temperature and thereby the cleaning effect can be enhanced while ensuring highly accurate packaging.

Description

明 糸田 »  Akira Itoda »
実装方法および実装装置  Mounting method and mounting apparatus
技 術 分 野  Technical field
本発明は、 接合面をエネルギ一波もしくはエネルギー粒子により洗浄後被接合 物同士を接合する実装方法および実装装置に関し、 とくに、 洗浄時の被接合物へ のチャージアツプダメージを抑えつつ洗浄効果を向上することが可能で、 低温接 合を可能として実装精度を向上することが可能な実装方法および実装装置に関す る。  The present invention relates to a mounting method and a mounting apparatus for bonding bonded surfaces to each other after cleaning the bonded surfaces with an energy wave or energy particles. In particular, the cleaning effect is improved while suppressing charge-up damage to the bonded objects during cleaning. The present invention relates to a mounting method and a mounting apparatus that can perform low-temperature bonding and improve mounting accuracy.
背 景 技 術 °  Background technology °
接合面をエネルギー波もしくはエネルギー粒子により洗浄した後、 被接合物同 士を接合する技術が知られている。 たとえば、 特許第 2 7 9 1 4 2 9号公報には、 シリコンウェハーの接合 を接合に先立って室温の真空中でイオンビームや原子 ビームなどのエネルギー波もしくはエネルギ一粒子により洗浄し、 シリコンゥェ ハ一同士を常温接合する方法が開示されている。 この方法では、 シリコンウェハ 一の接合面における酸化物や有機物等が上記のビームでェッチングにより飛ばさ れて除去され、 シリコンの原子で表面が形成され、 その表面同士が、 原子間の高 い結合力によって常温で接合できるようになる。  A technique is known in which the joined surfaces are joined after the joining surfaces have been cleaned with energy waves or energetic particles. For example, in Japanese Patent No. 2 7 9 1 4 2 9, silicon wafer bonding is performed by cleaning with an energy wave or energy particle such as an ion beam or an atomic beam in a vacuum at room temperature prior to bonding. A method of joining each other at room temperature is disclosed. In this method, oxides, organic substances, etc. on the bonding surface of a silicon wafer are removed by etching with the beam described above to form surfaces with silicon atoms, and the surfaces have a high bonding force between the atoms. Can be joined at room temperature.
このような常温接合法では、 接合界面の酸化物や有機物等からなる層 （いわゆ るコンタミ層） を除去すれば、 原子レベルで被接合物同士を常温で接合すること が可能になる。 そのためには、 いかにコンタミ層を十分に除去できるかが重要な ポイントとなり、 コンタミ層が十分に除去されていないと、 常温接合は困難とな り、 一般の接合と同様、 相当高温への加熱が要求される加熱接合を行うことが必 要となる。  In such a room temperature bonding method, it is possible to bond the objects to be bonded at the room temperature at the atomic level by removing a layer (so-called contamination layer) made of oxides or organic substances at the bonding interface. For that purpose, the important point is how well the contamination layer can be removed, and if the contamination layer is not sufficiently removed, room temperature bonding becomes difficult, and as with general bonding, heating to a considerably high temperature is required. It is necessary to perform the required heat bonding.
コンタミ層を十分に除去するためには、 照射するイオンビームや原子ビームな どのエネルギー波もしくはエネルギー粒子の強度を上げて洗浄効果を上 る必要 があるが、 その強度を上げれば上げる程、 被接合物にチャージアップが生じやす くなり、 被接合物が半導体である場合には、 その回路がチャージアップにより致 命的な損傷を被るおそれがある。 したがって、 とくにこのようなチャージアップ ダメージの生じるおそれがある場合には、 洗浄強度を落とさざるを得ず、 洗浄効 果が低減するためコン夕ミ層が十分に除去されないこととなって、 接合時には加 熱を併用することが必要となっていた。 In order to sufficiently remove the contamination layer, it is necessary to increase the intensity of energy waves or energetic particles such as the ion beam and atomic beam to be irradiated to improve the cleaning effect. Charge-up is likely to occur in objects, and if the object to be joined is a semiconductor, the circuit may be fatally damaged by charge-up. Therefore, especially when there is a risk of such charge-up damage, the cleaning strength must be reduced, and the cleaning effect can be reduced. Since the result is reduced, the conjugation layer is not sufficiently removed, and it is necessary to use heating at the time of joining.
そして、 接合時における加熱は、 被接合物やその保持手段に熱膨張を生じさせ るため、 ァライメントゃ接合の誤差、 ひずみを生じる要因となり、 実装精度を悪 化させるという副作用を招くこととなっている。  Heating during bonding causes thermal expansion of the object to be bonded and its holding means, which causes alignment and bonding errors and distortion, and has the side effect of deteriorating mounting accuracy. Yes.
発 明 の 開 示  Disclosure of invention
そこで、 本発明の'目的は、 チャージアップダメージの発生を防止するためにェ ネルギ一波もしくはエネルギー粒子の強度を下げる場合にあっても、 洗浄時に別 の要素を加えることによって十分に高い洗浄効果を発現させ、 それによつて常温 あるいはそれに近い低温にてァライメントや接合を行うことができ、 洗浄効果の 向上と高精度の実装との両方を達成可能とした、 実装方法および実装装置を提供 する と ある。  Therefore, the object of the present invention is to achieve a sufficiently high cleaning effect by adding another element during cleaning even when the energy wave or energy particle intensity is lowered to prevent the occurrence of charge-up damage. By providing a mounting method and a mounting device that can align and bond at room temperature or a temperature close to it, thereby achieving both improved cleaning effects and high-precision mounting. is there.
上記目的を達成するために、 本発明に係る実装方法は、 少なく とも一方の被接 合物の接合面を洗浄した後被接合物同士を接合する実装方法において、 前記洗浄 を、 被接合物を加熱しながら接合面にエネルギー波もしくはエネルギー粒子を照 射することにより行うことを特徴とする方法からなる。 すなわち、 エネルギー波 もしくはエネルギー粒子による洗浄時に、 加熱を併用するのである。  In order to achieve the above object, the mounting method according to the present invention is a mounting method in which at least one bonded object is cleaned and then the bonded objects are bonded to each other. It consists of a method characterized by irradiating an energy wave or energetic particles on the joint surface while heating. That is, heating is used in combination with cleaning with energy waves or energy particles.
エネルギー波もしくはエネルギー粒子の照射による接合面の洗浄は、 主として 照射されるエネルギー波もしくはエネルギー粒子によるエッチング効果により表 面のコンタミ層が取り去られるという物理的作用によっているが、 前述の如く、 洗浄効果を高めるために照射エネルギー強度を上げると、 表面に多量の電荷が溜 まりやすくなってそれが半導体等からなる被接合物の回路に一気に流れてしまう とその回路を壌してしまうおそれ、 つまり、 チャージアップダメージが発生する おそれが生じる。  The cleaning of the joint surface by the irradiation of energy waves or energy particles is mainly based on the physical action that the contamination layer on the surface is removed by the etching effect of the irradiated energy waves or energy particles. If the irradiation energy intensity is increased to increase the amount of charge, a large amount of charge tends to accumulate on the surface, and if it flows into the circuit of the object to be joined made of a semiconductor, etc., the circuit may be damaged. There is a risk of up-damage.
しかし本発明に係る実装方法においては、 洗浄時に加熱が併用され、 加熱によ つて洗浄される接合面表面では、 金属あるいは金属化合物の分子の動きがより活 発な固相拡散状態とされるので、 除去されるべきコンタミ層の分子が次々と表面 に現れて、 弱いエネルギー波もしくはエネルギー粒子でも十分に良好にエツチン グ除去されるようになる。 このエッチング方法には、 たとえば A rプラズマが使 用される。 また、 固相拡散状態では、 結合している分子同士の結合が容易に外れ るようになるので、 この面からも、 弱いエネルギー波もしくはエネルギー粒子で も十分に良好にエッチング除去されるようになる。 すなわち、 エネルギー波もし くはエネルギー粒子による表面エッチング効果が、 加熱の併用によって物理作用 的に高められることになる。 However, in the mounting method according to the present invention, heating is used at the time of cleaning, and the surface of the bonding surface cleaned by heating is in a solid phase diffusion state in which the movement of molecules of the metal or metal compound is more active. Contaminant molecules to be removed will appear on the surface one after another, and even weak energy waves or energetic particles will be etched sufficiently well. For this etching method, for example, Ar plasma is used. Used. In addition, in the solid phase diffusion state, the bonded molecules can be easily separated from each other, so even from this aspect, even weak energy waves or energetic particles can be removed sufficiently satisfactorily. . In other words, the surface etching effect by energy waves or energetic particles is enhanced physically by combined use of heating.
その結果、 上記洗浄により表面のコンタミ層が十分に除去されているので、 洗 浄に続くァライメ ン'ト、 接合時には格別の加熱は不要になり、 常温あるいはそれ に近い低温での接合が可能となる。 そのため、 従来のような加熱に伴う熱膨張の 影響は受けなくなり、 非常に高精度の、 たとえば ± 0 . 2 i m程度のサブミクロ ン台での実装が可能となる。  As a result, the contamination layer on the surface has been sufficiently removed by the above cleaning, so that no special heating is required during alignment or bonding following cleaning, and bonding at room temperature or a temperature close to that is possible. Become. As a result, it is not affected by the thermal expansion associated with conventional heating, and can be mounted on a very high precision submicron table, for example, about ± 0.2 im.
上記洗浄時に併用される加熱の温度としては、 被接合物の耐熱性やその被接合 物に許容される残留コンタミ層の量の程度等に応じて適宜決定すればよく、 特に コンタミ層の付着の原因となりやすい水分を飛ばす 1 0 0 °C以上であることが好 ましく、 また、 加熱により活性化しすぎるとチヤンバ中のコンタミが再付着しや すくなるため、 1 0 0〜 5 0 0 °Cの範囲内から適宜選択できる。  The heating temperature used in combination with the cleaning may be appropriately determined according to the heat resistance of the object to be bonded and the amount of residual contaminant layer allowed for the object to be bonded. It is preferable that the temperature is 100 ° C or higher, which is likely to cause moisture to escape, and contamination in the chamber tends to re-adhere if activated too much by heating. It can select suitably from within the range.
また、 上記洗浄は、 減圧雰囲気中で行うことが好ましい。 減圧雰囲気とするこ とにより、 エネルギー波もしくはエネルギー粒子自身による洗浄効果を高めるこ とができ、 本発明の如く加熱を併用することにより、 弱いエネルギーレベルでも 十分に優れた洗浄効果が得られるようになる。  The cleaning is preferably performed in a reduced pressure atmosphere. By using a reduced-pressure atmosphere, the cleaning effect by energy waves or energy particles themselves can be enhanced, and by using heating as in the present invention, a sufficiently excellent cleaning effect can be obtained even at low energy levels. Become.
また、 上記洗浄は、 不活性ガス （たとえば、 アルゴンガ ) 、 非酸化ガス （た とえば、 窒素ガス） 、 還元ガス （たとえば、 水素ガス） 、 置換ガス （たとえば、 フッ素基などの置換基を持つガス） のいずれかの雰囲気中で行う'ことが好ましい < この場合にも、 前記減圧条件を併用することが好ましい。 また、 前述のエツチン グ方法に対して酸素プラズマによる有機物の除去や水素プラズマによる酸化物の 除去など化学的な反応をもって、 コンタミ層を除去する方法においても、 このよ うなガス雰囲気中で洗浄時に加熱を併用することにより、 該加熱によって表面が 活性化されて還元や置換機能が向上し、 コンタミ層中の水素や炭素原子が H 2 0 や C 0 2 のガスになって除去されやすくなる。 また、 不活性ガス （たとえば、 ァ ルゴンガス） 中のエッチングにおいても、 加熱により表面分子が飛び出しやすく なり、 洗浄能力が向上する。 すなわち、 これらガス雰囲気中での洗浄時に加熱を 併用することにより、 化学的な反応等が促進されて、 洗浄効果が一層向上される。 このような本発明に係る実装方法では、 上記のような洗浄を行った後、 被接合 物を冷却してからァラィメントし、 しかる後に被接合物同士を接合することもで きる。 冷却には、 空冷、 場合によっては流体の冷媒を用いた冷却 （たとえば、 水 冷） を適用できる。 冷却により、 従来技術におけるァライメント時、 接合時の熱 膨張による影響を完全に除去することが可能になり、 ひずみのない高精度の実装 を達成できる。 洗浄後の «接合物の冷却としては、 たとえば常温にまで冷却する ことができる。 ここで常温とは、 たとえばハンダ溶融温度 （たとえば、 1 8 0 °C 程度） 以下室温までの温度を指し、 上記熱膨張による影響の除去を考慮すると、 室温〜 1 0 0 °C程度の温度範囲まで冷却することが好ましい。 In addition, the above cleaning is performed by using an inert gas (for example, argon gas), a non-oxidizing gas (for example, nitrogen gas), a reducing gas (for example, hydrogen gas), a replacement gas (for example, a gas having a substituent such as a fluorine group). It is preferable to carry out in any one of the following conditions: <In this case also, it is preferable to use the reduced pressure condition together. In addition, in the method of removing a contamination layer by a chemical reaction such as removal of organic substances by oxygen plasma or removal of oxide by hydrogen plasma in comparison with the above-described etching method, heating is performed in such a gas atmosphere during cleaning. By using together, the surface is activated by the heating to improve the reduction and substitution function, and hydrogen and carbon atoms in the contamination layer become H 2 0 and C 0 2 gas and are easily removed. In addition, even when etching in an inert gas (eg, argon gas), surface molecules are likely to jump out by heating. The cleaning ability is improved. In other words, by using heating together with cleaning in these gas atmospheres, chemical reactions are promoted, and the cleaning effect is further improved. In such a mounting method according to the present invention, after performing the cleaning as described above, the objects to be joined can be cooled and aligned, and then the objects to be joined can be joined together. For cooling, air cooling or cooling using a fluid refrigerant (for example, water cooling) can be applied. Cooling makes it possible to completely eliminate the effects of thermal expansion during alignment and bonding in the conventional technology, and achieves high-precision mounting without distortion. As the cooling of the bonded product after cleaning, for example, it can be cooled to room temperature. Here, normal temperature means, for example, solder melting temperature (for example, about 180 ° C.) or lower and room temperature, and considering the removal of the effects of thermal expansion, a temperature range from room temperature to about 100 ° C. It is preferable to cool down to
また、 このような本発明に係る実装方法は、 チャージアップの発生を防止しつ つ十分に高い洗浄効果が得られることから、 チャージアツプダメージの発生が回 避されなければならない被接合物の実装に、 とくに半導体の実装に好適である。 また、 本発明に係る実装方法においては、 加熱を伴う洗浄工程、 洗浄後の被接 合物のァラィメント工程おょぴァライメント後の被接合物同士の接合工程を、一 つのチヤンバ内で行うようにすることもできる。 このようにすれば、 洗浄から接 合までの一連の工程を、 実質的に一つの実装装置内で効率よくかつ迅速に行うこ とが可能になる。  In addition, such a mounting method according to the present invention provides a sufficiently high cleaning effect while preventing the occurrence of charge-up, so that the occurrence of charge-up damage must be avoided. In particular, it is suitable for semiconductor mounting. In the mounting method according to the present invention, the cleaning process with heating, the alignment process of the bonded object after cleaning, and the bonding process of the bonded objects after alignment are performed in one chamber. You can also In this way, a series of processes from cleaning to bonding can be performed efficiently and quickly in a single mounting apparatus.
洗浄に使用する上記エネルギー波もしくはエネルギー粒子としては、 プラズマ、 イオンビーム、 原子ビーム、 ラジカルビーム、 レーザ等を用いることが可能であ るが、 中でも取り扱い易さや制御の容易性、 装置のコストや構造の簡易性の面と チャージアツプダメージの少ない面とから、 プラズマを用いることが好ましい。 本発明に係る実装装置は、 少なく とも一方の被接合物の接合面を洗浄した後被 接合物同士を接合する実装装置であって、 被接合物を加熱しながら接合面にエネ ルギ一波もしくはエネルギー粒子を照射することにより接合面を洗浄する加熱 · 洗浄手段を有することを特徴とするものからなる。  As the energy wave or energy particle used for cleaning, plasma, ion beam, atomic beam, radical beam, laser, etc. can be used, among which ease of handling and control, equipment cost and structure It is preferable to use plasma from the viewpoint of simplicity and the fact that there is little charge-up damage. A mounting apparatus according to the present invention is a mounting apparatus that joins objects to be joined together after cleaning a joining surface of at least one object to be joined, and heats the object to be joined while applying a wave of energy or It has a heating / cleaning means for cleaning the joint surface by irradiating energetic particles.
この本発明に係る実装装置は、 さらに、 洗浄時の雰囲気を減圧する手段を有す ることが好ましい。 また、 さらに、 洗浄時の雰囲気を不活性ガス、 非酸化ガス、 還元ガス、 置換ガスのいずれかの雰囲気にするガス供給手段を有することが好ま しい。 また、 さらに、 洗浄された被接合物を冷却する手段を有することも好まし い。 The mounting apparatus according to the present invention preferably further includes means for reducing the atmosphere during cleaning. In addition, the atmosphere during cleaning is inert gas, non-oxidizing gas, It is preferable to have a gas supply means for providing an atmosphere of either reducing gas or replacement gas. Furthermore, it is also preferable to have a means for cooling the cleaned object to be joined.
この実装装置も、 チャージアツプの発生を防止しつつ十分に高い洗浄効果が得 られることから、 洗浄される被接合物が半導体である場合にとくに有効である。 また、 この実装装置においては、 上記加熱を伴う洗浄、 洗浄後の被接合物のァ ライメントおよびァ'ライメント後の被接合物同士の接合を一つのチヤンバ内で実 施可能に、 前記加熱 ·洗浄手段、 ァライメ ント手段、 接合手段が配設されている 構成とすることもできる。  This mounting apparatus is particularly effective when the object to be cleaned is a semiconductor because a sufficiently high cleaning effect can be obtained while preventing the occurrence of charge up. Further, in this mounting apparatus, the heating and cleaning can be performed in one chamber so that the cleaning with heating, the alignment of the objects to be bonded after the cleaning, and the bonding of the objects to be bonded after the alignment can be performed in one chamber. Means, alignment means, and joining means may be provided.
使用するエネルギー波もしくはエネルギー粒子としては、 前述の如く、 とくに プラズマが好ましく、 プラズマを使用する場合には、 被接合物の保持手段が、 加 熱手段とプラス'マ発生用電極とを兼ねている構造とすることができる。  As described above, plasma is particularly preferable as the energy wave or energy particle to be used. When plasma is used, the means for holding the object serves as both the heating means and the plasma generating electrode. It can be a structure.
また、 とくに減圧雰囲気下上記洗浄を行う場合には、 少なく とも一方の被接合 物保持手段が被接合物を静電気的に保持する静電チヤック手段を備えていること が好ましい。 静電チャック手段とすることにより、 真空中等でも、 問題なく被接 合物を保'持することができる。  In particular, when the above-described cleaning is performed in a reduced-pressure atmosphere, it is preferable that at least one object holding means includes an electrostatic chuck means for holding the object to be electrostatically held. By using the electrostatic chuck means, the object to be bonded can be held without any problem even in a vacuum.
このように、 本発明に係る実装方法および実装装置によれば、 エネルギー波も しくはエネルギー粒子による接合面洗浄の際に加熱を併用するようにしたので、 照射するエネルギー波もしくはエネルギー粒子のエネルギーレベルを下げてチヤ —ジアップダメージの発生を防ぎつつ、 加熱により表面を活性化させて、 十分に 高い洗浄効果を得ることができるようになり、 常温あるいはそれに近い温度で加 熱を伴わずに接合することができる。 また、 エネルギーレベルを卞げられること から、 装置ゴス ト、 ランニングコス トの低減も可能となる。 チャージアップダメ ージの発生防止により接合製品の信頼性を確保できるとともに、 加熱を伴わわな い常温でのァライメント、 接合により、 極めて高い実装精度を達成することがで As described above, according to the mounting method and the mounting apparatus according to the present invention, the energy wave or the energy level of the energy particle to be irradiated is used because the heating is used together with the energy wave or the cleaning of the bonding surface with the energy particle. The surface can be activated by heating to obtain a sufficiently high cleaning effect while preventing the occurrence of damage due to lowering of the joints. Joining without heating at or near room temperature can do. In addition, since the energy level can be increased, equipment costs and running costs can be reduced. By preventing the occurrence of charge-up damage, the reliability of bonded products can be ensured, and extremely high mounting accuracy can be achieved through alignment and bonding at room temperature without heating.
Sる S
図 面 の 簡 単 な 説 明  A simple explanation of the drawing
図 1は、 本発明の一実施態様に係る実装装置の洗浄工程を示す概略構成図であ る。 図 2は、 図 1の実装装置におけるァライメント工程を示す概略構成図である。 図 3は、 図 1の実装装置における接合工程を示す概略構成図である。 FIG. 1 is a schematic configuration diagram showing a cleaning process of a mounting apparatus according to an embodiment of the present invention. FIG. 2 is a schematic configuration diagram showing the alignment process in the mounting apparatus of FIG. FIG. 3 is a schematic configuration diagram showing a bonding process in the mounting apparatus of FIG.
発 明 を実施す る た め の最良の形態  The best mode for carrying out the invention
以下に、 本発明の望ましい実施の形態を、 図面を参照しながら説明する。  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
図 1は、 本発明の一実施態様に係る実装装置 1を示している。 本実施態様にお いては、 互いに接合される被接合物として、 一方はチップ 2で他方は基板 3であ る場合を例示している。 チップ 2上には複数の電極 4 (図 1には 2つの電極 4を 示してある） が設けられており、 基板 3には対応する電極 5が設けられている。 チップ 2は一方の被接合物保持手段としてのチップ保持手段 6に保持されており、 基板 3は他方の被接合物保持手段としての基板保持手段 7に保持されている。 本 実施態様では、 チップ保持手段 6は Z方向 （上下方向） に位置調整できるように なっており、 基板保持手 7は X、 Y方向 （水平方向） および Zまたは回転方向 ( 0方向） に位置調整できるようになつている。  FIG. 1 shows a mounting apparatus 1 according to an embodiment of the present invention. In the present embodiment, the case where one is the chip 2 and the other is the substrate 3 is illustrated as an object to be bonded to each other. A plurality of electrodes 4 (two electrodes 4 are shown in FIG. 1) are provided on the chip 2, and a corresponding electrode 5 is provided on the substrate 3. The chip 2 is held by a chip holding means 6 as one object holding means, and the substrate 3 is held by a substrate holding means 7 as the other object holding means. In this embodiment, the chip holding means 6 can be adjusted in the Z direction (vertical direction), and the substrate holding hand 7 is positioned in the X, Y direction (horizontal direction) and Z or the rotational direction (0 direction). It can be adjusted.
上記のような基板保持手段 7は、 一般には、 平行移動およびノまたは回転可能 に装着されるが、 必要に応じて、 それらと昇降 （Z方向移動） とを組み合わせた 態様に装着してもよい。 また、 チップ保持手段 6側についても、 昇降動作のみな らず、 平行移動およびノまたは回転動作を行うことができる装置形態であっても よい。  The substrate holding means 7 as described above is generally mounted so that it can be translated and rotated or rotated, but if necessary, it may be mounted in a combination of lifting and lowering (moving in the Z direction). . In addition, the chip holding means 6 side may be in the form of an apparatus capable of performing not only the lifting and lowering operation, but also the parallel movement and rotation or rotation.
なお、 上記において、 チップ 2とは、 たとえば、 I Cチップ、 半導体チップ、 光素子、 表面実装部品、 ウェハーなど、 種類や大きさに関係なく、 基板 3と接合 させる側の全てのものを含む。 また、 基板 3とは、 たとえば、 樹脂基板、 ガラス 基板、 フィルム基板、 チップ、 ウェハ一など、 種類や大きさに関係なく、 チップ 2と接合される側の全てのものを含む。  In the above, the chip 2 includes, for example, all IC chips, semiconductor chips, optical elements, surface mount components, wafers, and the like on the side to be bonded to the substrate 3 regardless of the type and size. Further, the substrate 3 includes, for example, a resin substrate, a glass substrate, a film substrate, a chip, a wafer, and the like on the side bonded to the chip 2 regardless of the type and size.
本実施態様では、 チップ保持手段 6において直接チップ 2を保持する部分、 お よび、 基板保持手段 7において直接基板 3を保持する部分は、 電極ツール 8、 9 に構成きれており、 それぞれプラズマ発生用電極として機能可能に構成されてい る。 これら電極ツール 8、 9は、 極性を交互に切替え可能にプラズマ発生用電源 1 0に接続されており、 電極ツール 8、 9間でチップ 2の接合面および基板 3の 接合面に洗浄用のプラズマ 1 1を照射することができるようになっている。 チップ保持手段 6には加熱手段としてのヒータ 1 2が内蔵されており、 上記プ ラズマによりチップ 2の接合面が洗净される際に、 チップ 2 (その接合面） を加 熱できるようになつている。 同様に、 基板保持手段 7には加熱手段としてのヒー 夕 1 3が内蔵されており、 上記プラズマにより基板 3の接合面が洗浄される際に、 基板 3 (その接合面） を加熱できるようになつている。 In this embodiment, the portion that directly holds the chip 2 in the chip holding means 6 and the portion that directly holds the substrate 3 in the substrate holding means 7 are configured in the electrode tools 8 and 9, respectively, for generating plasma. It is configured to function as an electrode. These electrode tools 8 and 9 are connected to a plasma generation power source 10 so that the polarities can be switched alternately, and the cleaning plasma is applied to the bonding surface of the chip 2 and the bonding surface of the substrate 3 between the electrode tools 8 and 9. 1 1 can be irradiated. The chip holding means 6 has a built-in heater 12 as a heating means. When the joining surface of the chip 2 is washed by the plasma, the tip 2 (the joining surface) can be heated. ing. Similarly, the substrate holding means 7 has a built-in heater 13 as a heating means so that the substrate 3 (the bonding surface) can be heated when the bonding surface of the substrate 3 is cleaned by the plasma. It is summer.
また、 本実施態様においては、 上記洗浄とともに、 後述の図 2に示すァライメ ントおよび図 3に示す接合を、 一つのチヤンバ内で実施できるようにするために、 装置全体を囲むのではなく、 相対して配置されたチップ 2と基板 3およびその周 辺部を局部的に実質的に密閉できるよう、 ローカル的なチャンバ 1 4が設けられ ている。 チャンバ 1 4はチップ保持手段 6側に固定されており、 その下部側は伸 縮可能な弾性部材 1 5で構成されて、 基板保持手段 7側に密着されることにより 密閉空間 1 6も形成できるようになつている。  In this embodiment, in addition to the above cleaning, the alignment shown in FIG. 2 and the joining shown in FIG. 3 described later are performed not in a single chamber, but in a relative manner so that the bonding can be performed in one chamber. A local chamber 14 is provided so that the chip 2 and the substrate 3 arranged in this manner and the periphery thereof can be substantially sealed locally. The chamber 14 is fixed to the chip holding means 6 side, and the lower side is composed of an elastic member 15 that can be expanded and contracted, and the sealed space 16 can also be formed by being in close contact with the substrate holding means 7 side. It ’s like that.
本実施態様では、 チャンバ 1 4に減圧手段としての真空ポンプ 1 7'が接続され ており、 真空ポンプ 1 7の作動により、 前記洗浄時に、 チヤンバ 1 4によって囲 まれた密閉空間 1 6内を、 所定の減圧雰囲気とすることができるようになつてい る。  In this embodiment, a vacuum pump 17 7 ′ as a decompression means is connected to the chamber 14, and the operation of the vacuum pump 17 causes the inside of the sealed space 16 surrounded by the chamber 14 during the cleaning, A predetermined reduced-pressure atmosphere can be obtained.
また本実施態様では、 前記プラズマによる洗浄の際に、 チャンバ 1 4内を不活 性ガス雰囲気、 とくにアルゴンガス雰囲気にするために、 不活性ガス供給手段 1 8もチャンバ 1 4に接続されている。  In the present embodiment, the inert gas supply means 18 is also connected to the chamber 14 in order to make the inside of the chamber 14 an inert gas atmosphere, particularly an argon gas atmosphere, during the cleaning with the plasma. .
さらに本実施態様では、 上記の加熱を併用したプラズマ洗浄後に、 速やかに強 制的にチップ 2と基板 3の温度を下げることができるよう、 空冷式冷却手段 1 9、 2 0が各ヒ一夕 1 2、 1 3の背面側に内蔵されている。  Furthermore, in this embodiment, after the plasma cleaning combined with the heating described above, the air-cooling cooling means 19 and 20 are provided so that the temperature of the chip 2 and the substrate 3 can be quickly and forcibly lowered. Built in the back side of 1 2 and 1 3.
このように構成された実装装置 1においては、 ァライメント、 接合を行う前に、 チップ 2と基板 3の接合面が、 加熱を伴ってプラズマ洗浄される。 加熱により、 洗浄面の表面が固相拡散状態へと活性化され、 その状態にてプラズマが照射され るので、 プラズマ自身のエネルギーレベルが低く抑えられても、 コンタミ層除去 に対して優れたエツチング効果が得られ、 チャージアップダメージを発生させる ことなく、 コンタミ層が十分に除去された高い洗浄効果が得られる。 すなわち、 接合面において原子レベル的に常温接合を可能とすることができる程度の、 高い 洗浄効果が得られる。 In the mounting apparatus 1 configured as described above, the bonding surface between the chip 2 and the substrate 3 is subjected to plasma cleaning with heating before alignment and bonding. Heating activates the surface of the cleaning surface to a solid-phase diffusion state, and plasma is irradiated in this state, so even if the energy level of the plasma itself is kept low, excellent etching for removing the contamination layer An effect is obtained, and a high cleaning effect is obtained in which the contamination layer is sufficiently removed without causing charge-up damage. That is, high enough to enable room-temperature bonding at the atomic level on the bonding surface A cleaning effect is obtained.
また、 減圧雰囲気下で、 空気の存在が十分に低く抑えられ、 かつ、 アルゴンガ ス雰囲気とされた状態にてプラズマ洗浄が行われるので、 プラズマが容易に発生 され、 効率よく洗浄される。 しかも、 プラズマ発生用電源 1 0からの電流や電圧 の調整、 およびノまたは、 アルゴンガスの供給量の調整により、 発生するプラズ マの強度を容易にかつ精度よく所望の強度に、 つまり、 チャージアップダメージ を発生させない強度にコントロールすることができる。  In addition, the presence of air is suppressed to a sufficiently low level under a reduced pressure atmosphere, and plasma cleaning is performed in an argon gas atmosphere, so that plasma is easily generated and cleaned efficiently. Moreover, by adjusting the current and voltage from the plasma generation power source 10 and adjusting the supply amount of argon gas or argon gas, the intensity of the generated plasma can be easily and accurately set to the desired intensity, that is, charged up. The strength can be controlled so as not to cause damage.
このような加熱を伴つ プラズマ洗浄の後、 本実施態様では、 空冷式冷却手段 After plasma cleaning with such heating, in this embodiment, air-cooled cooling means
1 9、 2 0により、 加熱されていたチップ 2および基板 3が常温あるいはそれに 近い温度にまで冷却され、 同一チヤンバ 1 4内にて、 図 2に示すァライメントェ 程、 図 3に示す接合工程に供される。 1 9 and 20 are used to cool the heated chip 2 and substrate 3 to room temperature or close to the same temperature, and in the same chamber 14, the alignment process shown in FIG. 2 and the bonding process shown in FIG. Is done.
ァライメントは、 たとえば図 2に示すように、 認識手段 2 1として、 たとえば 下方に揷入される赤外線力メラを用いて、 基板 3側およびチップ 2側に付された 認識マークを読み取り、 両者の相対位置が所定の精度範囲内に納まるよう、 基板 保持手段 7側の位置を制御することによって行われる。 このァライメント時には、 チップ 2および基板 3、 さらにはそれらの保持手段 6、 7の温度は低下されてい るので、 熱膨張に伴う精度悪化の問題は回避され、 高精度のァライメントが可能 になる。  For example, as shown in FIG. 2, the alignment uses the infrared power mellar inserted downward as the recognition means 21, and reads the recognition marks on the substrate 3 side and the chip 2 side, This is done by controlling the position on the substrate holding means 7 side so that the position falls within a predetermined accuracy range. At the time of alignment, the temperature of the chip 2 and the substrate 3 and their holding means 6 and 7 are lowered, so that the problem of deterioration in accuracy due to thermal expansion is avoided, and high-precision alignment is possible.
なお、 認識マークの読み取りのために上記のように下方に赤外線カメラを配置 する場合には、 たとえば基板保持手段 7側の基板保持部の 面側に赤外線を透過 可能な部材 （たとえば、 バックアップガラス） をマーク読み取り範囲にわたって 設けておき、 その範囲を基板保持手段 7の位置調整手段が遮らないように構成し ておくことで、 下方から基板 3側おょぴチップ 2側に付された両認識マ一クを読 み取ることが可能となる。  When an infrared camera is arranged below for reading the recognition mark, for example, a member that can transmit infrared rays to the surface of the substrate holding part on the substrate holding means 7 side (for example, backup glass) Is provided over the mark reading range, and the range is configured so that the position adjusting means of the substrate holding means 7 is not obstructed, so that both recognition markers attached to the substrate 3 side and the chip 2 side from below are provided. It is possible to read a single message.
上記ァライメント後に、 たとえば図 3に示すように、 チップ保持手段 6ととも にチップ 2が下降され、 その電極 4が基板 3の電極 5に圧着されて両者が接合さ れる。 このとき、 接合面、 つまり、 チップ 2の電極 4の表面と基板 3の電極 5の 表面は、 前記加熱を伴ったプラズマ洗浄によりコンタミ層が良好に除去された状 態に保たれているので、 敢えて特別な加熱を行う必要はなく、 常温あるいはそれ に近い低温にて、 両接合面が原子レベルで強固に接合される。 接合時に加熱を行 わなくてよいので、 この接合時にも熱膨張に伴う精度悪化の問題が回避され、 高 精度の接合が可能となり、 最終的に高精度でかつ接合信頼性の高い実装製品が得 られることになる。 After the alignment, for example, as shown in FIG. 3, the chip 2 is lowered together with the chip holding means 6, and the electrode 4 is pressure-bonded to the electrode 5 of the substrate 3 to join them together. At this time, the bonding surface, that is, the surface of the electrode 4 of the chip 2 and the surface of the electrode 5 of the substrate 3 are maintained in a state in which the contamination layer is well removed by the plasma cleaning accompanied by the heating. There is no need to do special heating at room temperature or Both joint surfaces are strongly bonded at the atomic level at low temperatures close to. Since heating is not required during bonding, the problem of accuracy deterioration due to thermal expansion is avoided even during this bonding, enabling high-accuracy bonding, and ultimately a product with high accuracy and high bonding reliability can be obtained. Will be obtained.
このようにエネルギー波もしくはエネルギー粒子による接合面洗浄の際に加熱 を併用することにより、 照射するエネルギー波もしくはエネルギー粒子のェネル ギ一レベルを下げてチャージアツプダメージの発生を防ぎつつ、 加熱により表面 を活性化させて、 十分に富い洗浄効果を得ることができるようになる。 したがつ て、 常温あるいはそれに近い温度で加熱を伴わずに接合することが可能となる。 加熱を伴わわない常温でのァライメ ント、 接合により、 極めて高い実装精度を達 成することができる。 また、 エネルギーレベルを下げられるので、 装置コスト、 ランニングコストの低減できる。 さらに、 チャージアツプダメージの発生防止に より接合製品の信頼性を向上できる。  In this way, by using heating when cleaning the bonding surface with energy waves or energy particles, the energy level of the irradiated energy waves or energy particles is lowered to prevent the occurrence of charge-up damage, while the surface is removed by heating. When activated, a sufficiently rich cleaning effect can be obtained. Therefore, it becomes possible to bond at room temperature or near that without heating. Extremely high mounting accuracy can be achieved by alignment and bonding at room temperature without heating. Also, since the energy level can be lowered, the equipment cost and running cost can be reduced. Furthermore, the reliability of bonded products can be improved by preventing the occurrence of charge-up damage.
産 業 上 の 利 用 可 能 性  Industrial applicability
本発明に係る実装方法および実装装置は、 エネルギー波もしくはエネルギー粒 子による接合面の洗浄を伴うあらゆる実装に適用でき、 とくに常温あるいはそれ に近い温度で加熱を伴わずに高精度で接合することが望まれる実装に好適である  The mounting method and the mounting apparatus according to the present invention can be applied to any mounting that involves cleaning of the bonding surface with energy waves or energy particles, and in particular, can be bonded with high accuracy without heating at room temperature or a temperature close thereto. Suitable for desired implementation

Claims

請 求 の 範 囲 The scope of the claims
1 . 少なく とも一方の被接合物の接合面を洗浄した後被接合物同士を接合する実 装方法において、 前記洗浄を、 被接合物を加熱しながら接合面にエネルギー波も しくはエネルギー粒子を照射することにより行うことを特徵とする実装方法。  1. In an implementation method in which at least one of the objects to be bonded is cleaned, and then the objects to be bonded are bonded to each other, the cleaning is performed by applying energy waves or energy particles to the bonding surface while heating the objects to be bonded. A mounting method characterized by being performed by irradiation.
2 . 前記洗浄時に被接合物を 1 0 0〜5 0 0 °Cの範囲内の温度に加熱する、 請求 項 1の実装方法。 ' 2. The mounting method according to claim 1, wherein the object to be bonded is heated to a temperature within a range of 100 to 500 ° C. during the cleaning. '
3 . 前記洗浄を減圧雰囲気中で行う、 請求項 1の実装方法。 3. The mounting method according to claim 1, wherein the cleaning is performed in a reduced-pressure atmosphere.
4 . 前記洗浄を、 不活性ガス、 非酸化ガス、 還元ガス、 置換ガスのいずれかの雰 囲気中で行う、 請求項 1の実装方法。 4. The mounting method according to claim 1, wherein the cleaning is performed in an atmosphere of an inert gas, a non-oxidizing gas, a reducing gas, or a replacement gas.
5 . 前記洗浄後、 被接合物を冷却してからァライメントし、 しかる後に被接合物 同士を接合する、 請求項 1の実装方法。 5. The mounting method according to claim 1, wherein after the cleaning, the objects to be bonded are cooled and aligned, and then the objects to be bonded are bonded to each other.
6 . 前記洗浄後、 被接合物を常温に冷却する、 請求項 5の実装方法。 6. The mounting method according to claim 5, wherein the object to be bonded is cooled to room temperature after the cleaning.
7 . 洗浄される被接合物が半導体である、 請求項 1の実装方法。 7. The mounting method according to claim 1, wherein the object to be cleaned is a semiconductor.
8 . 前記加熱を伴う洗浄工程、 洗浄後の被接合物のァライメント工程およびァラ ィメント後の被接合物同士の接合工程を、 一つのチャンバ内で行う、 請求項 1の 実装方法。 8. The mounting method according to claim 1, wherein the cleaning step involving heating, the alignment step of the objects to be bonded after cleaning, and the bonding step of the objects to be bonded after alignment are performed in one chamber.
9 . 前記エネルギー波もしくはエネルギー粒子がプラズマである、 請求項 1の実 装方法。 9. The method of claim 1, wherein the energy wave or energy particle is a plasma.
1 0 . 少なく とも一方の被接合物の接合面を洗浄した後被接合物同士を接合する 実装装置であって、 被接合物を加熱しながら接合面にエネルギー波もしくはエネ ルギ一粒子を照射することにより接合面を洗浄する加熱 ·洗浄手段を有すること を特徴とする実装装置。 1 0. A mounting apparatus for bonding objects to be bonded together after cleaning the bonding surface of at least one object to be bonded, wherein an energy wave or energy is applied to the bonding surface while heating the objects to be bonded. A mounting apparatus characterized by having a heating / cleaning means for cleaning the joint surface by irradiating a single particle of lugi.
1 1 . さらに、 洗浄時の雰囲気を減圧する手段を有する、 請求項 1 0の実装装置 c 11. The mounting apparatus c according to claim 10, further comprising means for reducing an atmosphere during cleaning.
1 2 . さらに、 洗浄時の雰囲気を不活性ガス、 非酸化ガス、 還元ガス、 置換ガス のいずれかの雰囲気にするガス供給手段を有する、 請求項 1 0の実装装置。 1 2. The mounting apparatus according to claim 10, further comprising gas supply means for setting the atmosphere during cleaning to any of an inert gas, a non-oxidizing gas, a reducing gas, and a replacement gas.
1 3 . さらに、 洗浄された被接合物を冷却する手段を有する、 請求項 1 0の実装 装置。 1 3. The mounting apparatus according to claim 10, further comprising means for cooling the cleaned workpiece.
1 4 . 洗浄される被接合物が半導体である、 請求項 1 0の実装装置。 14. The mounting apparatus according to claim 10, wherein the object to be cleaned is a semiconductor.
1 5 . 前記加熱を伴う洗浄、 洗浄後の被接合物のァライメン トおよびァライメ ン ト後の被接合物同士の接合を一つのチャンバ内で実施可能に、 前記加熱 ·洗浄手 段、 ァライメント手段、 接合手段が配設されている、 請求項 1 0の実装装置。 15. Cleaning with heating, alignment of objects to be bonded after cleaning, and bonding of objects to be bonded after alignment in a single chamber, the heating / cleaning means, alignment means, The mounting apparatus according to claim 10, wherein a joining means is provided.
1 6 . 前記エネルギー波もしくはエネルギー粒子がプラズマである、 請求項 1 0 の実装装置。 16. The mounting apparatus according to claim 10, wherein the energy wave or energy particle is plasma.
1 7 . 被接合物の保持手段が、 加熱手段とプラズマ発生用電極とを兼ねている、 請求項 1 6の実装装置。 17. The mounting device according to claim 16, wherein the means for holding the object to be bonded serves as both a heating means and an electrode for plasma generation.
1 8 . 少なくとも一方の被接合物保持手段が被接合物を静電気的に保持する静電 チャ ック手段を備えている、 請求項 1 0の実装装置。 18. The mounting apparatus according to claim 10, wherein at least one object holding means includes electrostatic chuck means for holding the object to be electrostatically held.
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