WO2003071601A2 - Module de circuit et procede de fabrication - Google Patents

Module de circuit et procede de fabrication Download PDF

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Publication number
WO2003071601A2
WO2003071601A2 PCT/DE2003/000430 DE0300430W WO03071601A2 WO 2003071601 A2 WO2003071601 A2 WO 2003071601A2 DE 0300430 W DE0300430 W DE 0300430W WO 03071601 A2 WO03071601 A2 WO 03071601A2
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WO
WIPO (PCT)
Prior art keywords
circuit carrier
circuit
circuit module
carrier sections
electronic components
Prior art date
Application number
PCT/DE2003/000430
Other languages
German (de)
English (en)
Other versions
WO2003071601A3 (fr
Inventor
Robert Bergmann
Wolfram Hable
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2003071601A2 publication Critical patent/WO2003071601A2/fr
Publication of WO2003071601A3 publication Critical patent/WO2003071601A3/fr

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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Definitions

  • the invention relates to a circuit module with a plurality of electronic components and a manufacturing method of the same according to the preamble of the independent claims.
  • a device for packaging electronic components by means of injection molding technology is known from patent application 1026508.5.
  • a large number of electronic components are packaged on a first side of a circuit carrier made of a large-area ceramic substrate in a plastic housing.
  • a size of more than 4 cm 2 is defined as a large area.
  • the known device In order to compensate for the difference in the coefficient of expansion between the ceramic substrate and the plastic housing, the known device is used to bulge the large-area ceramic substrate before the plastic housing compound is applied, and is therefore exposed to a high load and risk of breakage.
  • a circuit module In the shrinking of the plastic compound for the housing after the molten application of the same to the bulging ceramic substrate, a circuit module can be implemented that at room temperature and at the operating temperatures of the
  • Circuit module despite a large ceramic substrate has a flat and stress-free housing.
  • the known device thus achieves a balance between the different thermal expansion coefficients of plastic and ceramic in that the large-area ceramic substrate is bulged out before the application of a plastic compound using a complex device becomes. It is desirable to avoid the elaborate bulging with the associated risk of breakage of a large-area ceramic and nevertheless to create a possibility of accommodating a large-area circuit board in a plastic housing without stress, especially since the number of electronic components on the ceramic circuit board increases the need for large-area Ceramic carriers are constantly increasing.
  • the object of the invention is to specify a circuit module with several electronic components and to provide a corresponding method for producing the circuit module, in which a compensation of the different thermal expansion coefficients of ceramic and plastic mass is created.
  • the circuit module with a plurality of electronic components has a circuit carrier made of ceramic and a housing made of plastic.
  • the thermal expansion coefficient of the circuit carrier is smaller than that of the plastic housing in which the circuit carrier is packaged with the electronic components, the circuit carrier is separated into a plurality of circuit carrier sections, each of which is electrically connected to one another via bond connections in the plastic housing.
  • the segmentation of the large-area circuit carrier sections, which are electrically connected to one another by flexible bond connections in the plastic housing reduces the thermal stresses due to the different coefficients of thermal expansion and compensates. which makes it possible to provide circuit carriers of any size for a circuit module without complex devices and techniques.
  • circuit carrier It is only necessary to separate the circuit carrier into circuit carrier sections before packaging the circuit carrier in a plastic housing compound, and the individual circuit carrier sections are to be electrically connected to one another with bond connections. This effort is less than the effort for bulging the large-area ceramic substrate.
  • circuit carrier area can be expanded as desired by adding further circuit carrier sections.
  • the area size per circuit carrier section should not exceed the value of 4 cm 2 .
  • the circuit carrier sections can be arranged in rows and columns, so that there remains a distance between 1 and 5 mm, which is to be bridged by the electrical bond connections. In the circuit module according to the invention, this distance is also filled with plastic housing compound.
  • the back of the circuit carrier sections can protrude from the plastic housing compound or is at least kept free of plastic housing compound in order to ensure an intensive heat exchange of the ceramic with the surroundings.
  • Ceramic because of its crystallinity, has a higher thermal conductivity than the plastic housing mass, the electronic components can be cooled more intensively from the back of the circuit carrier.
  • the rear side of the circuit module can be connected to a metallic heat sink by possibly arranging a cooling plate with heat sinks on the rear side of the circuit module.
  • circuit carrier sections As the size of the electronic components increases, it becomes necessary for circuit carrier sections to have at least one surface size, which makes it possible for at least one electronic component to be accommodated in each case on a circuit carrier section.
  • Such electronic components have semiconductor chips with active semiconductor components which generate a limited heat loss and are therefore not only electrically connected to other semiconductor chips via the circuit carrier section, but are also thermally balanced with the surroundings in terms of thermal engineering. This thermal compensation is particularly important for circuit modules whose electronic components have power diodes, power transistors, bipolar power transistors with an insulated gate and / or MOS transistors.
  • each circuit carrier section made of ceramic already means a heat sink, via which the power loss can be effectively reduced.
  • each circuit carrier section can also have passive components and / or rewiring lines, it being possible for passive components, such as resistors, capacitors and coils, to be introduced directly on the surface of the circuit carrier section by structuring a metallic coating of the circuit carrier section.
  • the Rewiring lines on the circuit carrier section can be connected to the electrodes of the electronic components or to their external contacts via bond connections.
  • Aluminum bond wires can be used for this purpose, which are ultrasonically
  • Bonding methods can realize bond connections for signal and / or data transmission, whereby aluminum bond wires with a diameter between 18 and 100 ⁇ m can be used for these small signals, while for supply connections the aluminum bond wire has diameters between 100 and 750 ⁇ m.
  • the diameter of the bond connections between the ceramic circuit carrier sections can be adapted to the respective current load, supply connections having diameters between 100 and 750 ⁇ m being realized.
  • the arrangement has a notching tool which is arranged in a region of an aluminum bond wire guide.
  • the cooling of the circuit module on its rear side can be further intensified by forming cooling fins on a heat sink.
  • a method for producing a circuit module with a plurality of electronic components has the following method steps: First, a plurality of circuit carrier sections, which have contact connection areas for flat conductors of a flat conductor frame and for bond connections, are equipped with a plurality of electronic components. Then the printed circuit board sections are arranged next to one another with joints between the circuit board sections. After that, flat conductors become a flat conductor frame attached to corresponding contact pads and the circuit carrier sections additionally connected to one another via bond connections between corresponding contact pads to form a multi-substrate module. Finally, the multi-substrate module is packed into a circuit module in a plastic mass.
  • the electronic components can either be soldered onto correspondingly provided metallic contact areas of a rewiring line pattern that can be applied to each circuit carrier section, or can be fixed at predetermined positions on a rewiring line pattern with a semiconductor chip brush using an electrically conductive adhesive.
  • the electrodes of the electronic components can then be bonded to this rewiring line pattern on the circuit carrier section.
  • relatively thin aluminum bonding wires are used for signal and data lines microns with a diameter between 25 and 100, while power supply lines relatively "thick aluminum bonding wires microns with a diameter from 100 to 750 are used.
  • the joints created when the circuit carrier is arranged are then again electrically bridged by bonding aluminum wires using a wedge-wedge ultrasonic bond at room temperature.
  • outer flat conductors of a flat conductor frame are brought up to the individual circuit carrier sections and connected to contact connection surfaces of the rewiring line pattern, so that during the subsequent packaging in a plastic housing mass, these flat conductors as Protrude external connections from the plastic housing mass, but at least have exposed surfaces for contacting from the outside.
  • Circuit carrier of such a multi-chip module is separated m individual circuit carrier sections. This prevents an impermissibly high deflection of the circuit module and also increases the reliability, which was previously impaired by the difference between a ceramic material and a plastic material, because high thermal stresses and thus mechanical forces could occur.
  • each circuit carrier section is limited in order to keep the mechanical stresses and thus the deflection in an acceptable frame, so that they do not take effect externally and the dissipation of power losses due to deflection or delamination is not hindered.
  • the mechanical stresses are significantly reduced by dividing the circuit carrier into several small ceramic individual substrates.
  • the deflection of the circuit module through the use of several individual substrates is reduced in such a way that it can no longer be ascertained with the naked eye.
  • FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention
  • FIG. 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of FIG. 1,
  • Figure 3 shows a schematic plan view of a circuit module of a second embodiment of the invention.
  • FIG. 1 shows a schematic top view of a circuit module 1 of a first embodiment of the invention.
  • Reference number 2 denotes electronic components which are arranged in the circuit module.
  • the reference symbol 3 denotes the circuit carrier made of ceramic, which in this embodiment of the invention is divided into three circuit carrier sections 5 and carries the electronic components 2.
  • the reference numeral 6 denotes bond connections between the circuit carrier sections 5 in order to electrically connect them to one another.
  • the reference symbol 8 denotes a ne plastic mass, which forms the housing 4 made of plastic, in which electronic components 2 are embedded.
  • the reference symbol 9 denotes semiconductor chips which belong to the electronic components 2 of the circuit module shown here.
  • the reference number 10 denotes power diodes and the reference number 11 power transistors.
  • the reference numeral 16 denotes separating joints between the circuit carrier sections 5, which occur when a plurality of circuit carrier sections 5 are arranged to form a circuit carrier 3.
  • the reference numeral 17 designates aluminum bonding wires, which ensure the bonding connections between the individual circuit carrier sections 5 and bridge the joints.
  • Supply services are supplied to the circuit module 1 shown in FIG. 1 via wide outer flat conductors 18, which are electrically connected with their inner flat conductor ends to corresponding contact connection areas of a rewiring line pattern on the circuit carrier sections 5.
  • the rewiring line pattern on the circuit carrier sections 5 made of ceramic is omitted.
  • the active electronic components composed of diodes 10 and power transistors 11 are supplied with corresponding currents via the supply flat conductor 18.
  • Control signals and data are supplied to the circuit module 1 via the narrower outer flat conductors 19 of the circuit module 1 shown in FIG.
  • circuit carrier 3 made of ceramic By separating the circuit carrier 3 made of ceramic into three circuit carrier sections 5 and then twisting the circuit carrier sections 5 via the bond connections 6 to form a multi-substrate component, that the different coefficient of thermal expansion between the ceramic and the plastic mass of the housing does not have the effect that a substantial deflection of the entire component occurs.
  • the circuit carrier sections made of ceramic are kept smaller than 4 cm 2 , so that the thermal stresses between ceramic carrier shield 5 and plastic housing mass 8 m remain within permissible limits without impairing the reliability of the circuit module.
  • the plastic housing compound and the plastic housing are only indicated in outline with a dashed line m in this FIG. 1 in order to increase the clarity of the illustration.
  • Figure 2 shows a schematic cross section through the circuit module 1 of the first embodiment of the invention along the section line A-A of Figure 1.
  • Components with the same functions as m figure are identified by the same reference numerals and not discussed separately.
  • the plastic housing compound 8 includes the three ceramic circuit carrier sections 5 shown in FIG. 1, a power diode 10 and a power transistor 11 being visible on each of the circuit carrier sections 5 on the carrier sections 5 m of this cross section.
  • the power components that is to say the diode 10 and the power transistor 11, are connected to one another via bonding wires 15.
  • the output electrode 20 of the power transistor 11 is connected via a further bonding wire 15 to a rewiring line 21, which in turn forms a contact connection area 22 on which a correspondingly thick aluminum bonding wire 17 establishes the electrical connection to the adjacent circuit carrier section 5.
  • a flat conductor 18 is fastened on the circuit carrier 3, which in turn is electrically connected to a contact connection area 22.
  • Figure 3 shows a schematic plan view of a circuit module 1 of a second embodiment of the invention.
  • Components with the same functions as in the previous figures are identified by the same reference numerals and are not discussed separately.
  • the only difference between the first embodiment of the invention and the second embodiment of the invention is that here a larger circuit carrier 3 made of ceramic is divided into six circuit carrier sections 5, which are arranged in rows and columns to form a rectangular circuit module 1.
  • the distances or joints 16 between the individual circuit carrier sections 5 are overcome in the plastic housing compound 8 by means of corresponding bond connections 6 made of an aluminum wire 18.
  • the mechanical separation of the large circuit carrier 3 into six small circuit carrier sections 5 ensures that the difference in the coefficient of thermal expansion between ceramic and plastic is kept within reasonable limits, so that the reliability of such a large circuit module is improved.
  • 12 thicker bond wires with a diameter between 100 ⁇ m and 750 ⁇ m are used for supply connections than for signal and data lines with a diameter between 18 ⁇ m and 100 ⁇ m.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

L'invention concerne un module de circuit (1) comportant plusieurs composants électroniques (2) et un procédé de fabrication de celui-ci. Ledit module de circuit (1) comporte un porte-circuit en céramique (3) et un boîtier en plastique (4), et les différences au sein des coefficients de dilatation thermique sont minimisées du fait que le porte-circuit (3) comportant les composants électroniques (2) est divisé en plusieurs sections de porte-circuit (5). Les fentes de séparation sont pontées électriquement par des connexions de liaison (6) dans le boîtier en plastique (4).
PCT/DE2003/000430 2002-02-18 2003-02-13 Module de circuit et procede de fabrication WO2003071601A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10206817 2002-02-18
DE10206817.8 2002-02-18

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WO2003071601A2 true WO2003071601A2 (fr) 2003-08-28
WO2003071601A3 WO2003071601A3 (fr) 2003-11-27

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090977A1 (fr) * 2003-04-09 2004-10-21 Ixys Semiconductor Gmbh Ensemble semi-conducteur de puissance encapsule
DE102009044933A1 (de) * 2009-09-24 2011-04-07 Infineon Technologies Ag Leistungshalbleitermodul mit mindestens zwei verbundenen Schaltungsträgern und Verfahren zur Herstellung eines Leistungshalbleitermoduls mit mindestens zwei verbundenen Schaltungsträgern
EP2525397A1 (fr) * 2011-05-17 2012-11-21 IXYS Semiconductor GmbH Semi-conducteur de puissance
DE102011080153A1 (de) * 2011-07-29 2013-01-31 Infineon Technologies Ag Flexible verbindung von substraten in leistungshalbleitermodulen

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US4554613A (en) * 1983-10-31 1985-11-19 Kaufman Lance R Multiple substrate circuit package
US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5332921A (en) * 1992-04-27 1994-07-26 Kabushiki Kaisha Toshiba Resin-seal type semiconductor device
DE19522173C1 (de) * 1995-06-19 1996-10-17 Eupec Gmbh & Co Kg Leistungs-Halbleitermodul
DE19707514A1 (de) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Halbleitermodul
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US6272015B1 (en) * 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
DE10125697A1 (de) * 2001-05-25 2002-12-05 Eupec Gmbh & Co Kg Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls
WO2003021680A2 (fr) * 2001-09-01 2003-03-13 Eupec Gmbh Module de puissance a semi-conducteur

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US4554613A (en) * 1983-10-31 1985-11-19 Kaufman Lance R Multiple substrate circuit package
US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5332921A (en) * 1992-04-27 1994-07-26 Kabushiki Kaisha Toshiba Resin-seal type semiconductor device
DE19522173C1 (de) * 1995-06-19 1996-10-17 Eupec Gmbh & Co Kg Leistungs-Halbleitermodul
DE19707514A1 (de) * 1997-02-25 1998-08-27 Eupec Gmbh & Co Kg Halbleitermodul
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US6272015B1 (en) * 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
DE10125697A1 (de) * 2001-05-25 2002-12-05 Eupec Gmbh & Co Kg Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls
WO2003021680A2 (fr) * 2001-09-01 2003-03-13 Eupec Gmbh Module de puissance a semi-conducteur

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090977A1 (fr) * 2003-04-09 2004-10-21 Ixys Semiconductor Gmbh Ensemble semi-conducteur de puissance encapsule
DE102009044933A1 (de) * 2009-09-24 2011-04-07 Infineon Technologies Ag Leistungshalbleitermodul mit mindestens zwei verbundenen Schaltungsträgern und Verfahren zur Herstellung eines Leistungshalbleitermoduls mit mindestens zwei verbundenen Schaltungsträgern
DE102009044933B4 (de) 2009-09-24 2023-03-30 Infineon Technologies Ag Leistungshalbleitermodul mit mindestens zwei verbundenen Schaltungsträgern und Verfahren zur Herstellung eines Leistungshalbleitermoduls mit mindestens zwei verbundenen Schaltungsträgern
EP2525397A1 (fr) * 2011-05-17 2012-11-21 IXYS Semiconductor GmbH Semi-conducteur de puissance
US9042103B2 (en) 2011-05-17 2015-05-26 Ixys Semiconductor Gmbh Power semiconductor module with asymmetrical lead spacing
EP2525397B1 (fr) 2011-05-17 2015-10-21 IXYS Semiconductor GmbH Semi-conducteur de puissance
US9210818B2 (en) 2011-05-17 2015-12-08 Ixys Semiconductor Gmbh Power semiconductor module with asymmetrical lead spacing
DE102011080153A1 (de) * 2011-07-29 2013-01-31 Infineon Technologies Ag Flexible verbindung von substraten in leistungshalbleitermodulen

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