WO2003055791A3 - Improved etch process for etching microstructures - Google Patents

Improved etch process for etching microstructures Download PDF

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Publication number
WO2003055791A3
WO2003055791A3 PCT/US2002/029853 US0229853W WO03055791A3 WO 2003055791 A3 WO2003055791 A3 WO 2003055791A3 US 0229853 W US0229853 W US 0229853W WO 03055791 A3 WO03055791 A3 WO 03055791A3
Authority
WO
WIPO (PCT)
Prior art keywords
opening
silicon
layer
etch process
substrate
Prior art date
Application number
PCT/US2002/029853
Other languages
French (fr)
Other versions
WO2003055791A2 (en
Inventor
Jeffrey D Chinn
Sofiane Soukane
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/265,698 external-priority patent/US7358008B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003055791A2 publication Critical patent/WO2003055791A2/en
Publication of WO2003055791A3 publication Critical patent/WO2003055791A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Weting (AREA)

Abstract

A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.
PCT/US2002/029853 2001-10-17 2002-10-11 Improved etch process for etching microstructures WO2003055791A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34449701P 2001-10-17 2001-10-17
US60/344,497 2001-10-17
US10/265,698 2002-10-08
US10/265,698 US7358008B2 (en) 2001-10-12 2002-10-08 Electrochemical device including electrolyte

Publications (2)

Publication Number Publication Date
WO2003055791A2 WO2003055791A2 (en) 2003-07-10
WO2003055791A3 true WO2003055791A3 (en) 2004-03-18

Family

ID=26951373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029853 WO2003055791A2 (en) 2001-10-17 2002-10-11 Improved etch process for etching microstructures

Country Status (1)

Country Link
WO (1) WO2003055791A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE550804T1 (en) 2003-09-18 2012-04-15 Commw Scient Ind Res Org HIGH PERFORMANCE ENERGY STORAGE DEVICES
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
AR064292A1 (en) 2006-12-12 2009-03-25 Commw Scient Ind Res Org ENHANCED ENERGY STORAGE DEVICE
AR067238A1 (en) 2007-03-20 2009-10-07 Commw Scient Ind Res Org OPTIMIZED DEVICES FOR ENERGY STORAGE
DE102007046498B4 (en) 2007-09-18 2011-08-25 Austriamicrosystems Ag Method for producing a microelectromechanical component
JP5680528B2 (en) 2009-04-23 2015-03-04 古河電池株式会社 Method for producing negative electrode plate for lead acid battery and lead acid battery
KR101833287B1 (en) 2009-08-27 2018-03-02 커먼웰쓰 사이언티픽 앤드 인더스트리얼 리서치 오가니제이션 Electrical storage device and electrode thereof
JP5711483B2 (en) 2009-08-27 2015-04-30 古河電池株式会社 Method for producing negative electrode plate of composite capacitor for lead storage battery and lead storage battery
JP5797384B2 (en) 2009-08-27 2015-10-21 古河電池株式会社 Composite capacitor negative electrode plate for lead acid battery and lead acid battery
JP2012133959A (en) 2010-12-21 2012-07-12 Furukawa Battery Co Ltd:The Composite capacitor negative electrode plate for lead storage battery, and lead storage battery
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
ITMO20110095A1 (en) * 2011-05-03 2012-11-04 Acetaia Giuseppe Cremonini S R L BEVERAGE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2736934A1 (en) * 1995-07-21 1997-01-24 Commissariat Energie Atomique METHOD OF MANUFACTURING A STRUCTURE WITH A USEFUL LAYER MAINTAINED REMOTE FROM A SUBSTRATE BY STOPS, AND OF DESOLIDARIZATION OF SUCH LAYER

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2736934A1 (en) * 1995-07-21 1997-01-24 Commissariat Energie Atomique METHOD OF MANUFACTURING A STRUCTURE WITH A USEFUL LAYER MAINTAINED REMOTE FROM A SUBSTRATE BY STOPS, AND OF DESOLIDARIZATION OF SUCH LAYER

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALLEY R L ET AL: "The effect of release-etch processing on surface microstructure stiction", SOLID-STATE SENSOR AND ACTUATOR WORKSHOP, 1992. 5TH TECHNICAL DIGEST., IEEE HILTON HEAD ISLAND, SC, USA 22-25 JUNE 1992, NEW YORK, NY, USA,IEEE, US, 22 June 1992 (1992-06-22), pages 202 - 207, XP010056353, ISBN: 0-7803-0456-X *
ANGUITA J ET AL: "HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 64, no. 3, 31 January 1998 (1998-01-31), pages 247 - 251, XP004116352, ISSN: 0924-4247 *
WON ICK JANG ET AL: "Silicon surface micromachining by anhydrous HF gas-phase etching with methanol", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3511, 21 September 1998 (1998-09-21), pages 143 - 150, XP009015809, ISSN: 0277-786X *

Also Published As

Publication number Publication date
WO2003055791A2 (en) 2003-07-10

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