WO2003038892A3 - Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization - Google Patents
Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization Download PDFInfo
- Publication number
- WO2003038892A3 WO2003038892A3 PCT/US2002/034277 US0234277W WO03038892A3 WO 2003038892 A3 WO2003038892 A3 WO 2003038892A3 US 0234277 W US0234277 W US 0234277W WO 03038892 A3 WO03038892 A3 WO 03038892A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- atomic
- alpha
- tantalum
- barrier layers
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 229910052715 tantalum Inorganic materials 0.000 title 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- -1 nitrogen-containing compound Chemical class 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45582—Expansion of gas before it reaches the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-7006190A KR20040058239A (en) | 2001-10-26 | 2002-10-25 | Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application |
CNB02821269XA CN1319146C (en) | 2001-10-26 | 2002-10-25 | Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application |
JP2003541048A JP4711624B2 (en) | 2001-10-26 | 2002-10-25 | Integration of ALD tantalum nitride and alpha phase tantalum for copper electrode formation applications |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34608601P | 2001-10-26 | 2001-10-26 | |
US60/346,086 | 2001-10-26 | ||
US10/193,333 US20030082307A1 (en) | 2001-10-26 | 2002-07-10 | Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application |
US10/193,333 | 2002-07-10 | ||
US10/199,415 US20030082301A1 (en) | 2001-10-26 | 2002-07-18 | Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
US10/199,415 | 2002-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003038892A2 WO2003038892A2 (en) | 2003-05-08 |
WO2003038892A3 true WO2003038892A3 (en) | 2004-02-26 |
Family
ID=27393190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/034277 WO2003038892A2 (en) | 2001-10-26 | 2002-10-25 | Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4711624B2 (en) |
CN (1) | CN1319146C (en) |
TW (1) | TWI223867B (en) |
WO (1) | WO2003038892A2 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
WO2004114398A1 (en) * | 2003-06-13 | 2004-12-29 | Applied Materials, Inc. | Integration of ald tantalum nitride for copper metallization |
US7605469B2 (en) | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
JP4783561B2 (en) * | 2004-09-27 | 2011-09-28 | 株式会社アルバック | Method for forming copper wiring |
CN100369215C (en) * | 2005-12-02 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Adsorption stripping process for removing exposed zone polymer |
JP2007073980A (en) * | 2006-10-30 | 2007-03-22 | Toshiba Corp | Tan film for semiconductor device and semiconductor device using the same |
KR100881716B1 (en) | 2007-07-02 | 2009-02-06 | 주식회사 하이닉스반도체 | Method for fabricating tungsten line with reduced sheet resistance tungsten layer and method for fabricating gate of semiconductor device using the same |
KR20110084275A (en) * | 2008-10-27 | 2011-07-21 | 어플라이드 머티어리얼스, 인코포레이티드 | Vapor deposition method for ternary compounds |
US8227344B2 (en) * | 2010-02-26 | 2012-07-24 | Tokyo Electron Limited | Hybrid in-situ dry cleaning of oxidized surface layers |
KR101661768B1 (en) | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
CN103151302A (en) * | 2013-02-26 | 2013-06-12 | 复旦大学 | Method for preparing low-resistance tantalum and tantalum nitride double-layer barrier layer by utilizing nitrogen-containing plasma |
KR101708242B1 (en) * | 2016-08-11 | 2017-02-20 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
US10229826B2 (en) * | 2016-10-21 | 2019-03-12 | Lam Research Corporation | Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide |
CN109273402B (en) * | 2018-09-13 | 2020-08-25 | 德淮半导体有限公司 | Manufacturing method of metal barrier layer, metal interconnection structure and manufacturing method thereof |
TWI731293B (en) | 2019-01-18 | 2021-06-21 | 元智大學 | Nanotwinned structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
EP1077484A2 (en) * | 1999-08-16 | 2001-02-21 | Applied Materials, Inc. | Barrier layer for electroplating processes |
WO2001029891A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Conformal lining layers for damascene metallization |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6387805B2 (en) * | 1997-05-08 | 2002-05-14 | Applied Materials, Inc. | Copper alloy seed layer for copper metallization |
JP4097747B2 (en) * | 1997-08-07 | 2008-06-11 | 株式会社アルバック | Barrier film formation method |
US6140234A (en) * | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
KR100279300B1 (en) * | 1998-05-11 | 2001-02-01 | 윤종용 | How to connect metal wires |
US6218302B1 (en) * | 1998-07-21 | 2001-04-17 | Motorola Inc. | Method for forming a semiconductor device |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
JP2001144089A (en) * | 1999-11-11 | 2001-05-25 | Sony Corp | Method of manufacturing semiconductor device |
DE10196055T1 (en) * | 2000-04-13 | 2003-04-03 | Gelest Inc | Process for the vapor deposition of titanium-silicon-nitrogen films |
-
2002
- 2002-10-25 JP JP2003541048A patent/JP4711624B2/en not_active Expired - Fee Related
- 2002-10-25 TW TW91125352A patent/TWI223867B/en not_active IP Right Cessation
- 2002-10-25 WO PCT/US2002/034277 patent/WO2003038892A2/en active Application Filing
- 2002-10-25 CN CNB02821269XA patent/CN1319146C/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
US6270572B1 (en) * | 1998-08-07 | 2001-08-07 | Samsung Electronics Co., Ltd. | Method for manufacturing thin film using atomic layer deposition |
EP1077484A2 (en) * | 1999-08-16 | 2001-02-21 | Applied Materials, Inc. | Barrier layer for electroplating processes |
WO2001029891A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Conformal lining layers for damascene metallization |
Also Published As
Publication number | Publication date |
---|---|
CN1319146C (en) | 2007-05-30 |
TWI223867B (en) | 2004-11-11 |
JP2005508092A (en) | 2005-03-24 |
WO2003038892A2 (en) | 2003-05-08 |
JP4711624B2 (en) | 2011-06-29 |
CN1575517A (en) | 2005-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003038892A3 (en) | Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization | |
US6194310B1 (en) | Method of forming amorphous conducting diffusion barriers | |
WO2002012589A3 (en) | Barrier layer structure for copper metallization and method of forming the structure | |
WO2003028091A3 (en) | Copper interconnect barrier layer structure and formation method | |
WO2003031679A3 (en) | Method for depositing metal layers employing sequential deposition techniques | |
KR102335506B1 (en) | Through silicon via metallization | |
US6368954B1 (en) | Method of copper interconnect formation using atomic layer copper deposition | |
WO2004113585A3 (en) | Atomic layer deposition of barrier materials | |
EP0875924A3 (en) | Improved tantalum-containing barrier layers for copper | |
WO2004053947A3 (en) | Titanium silicon nitride (tisin) barrier layer for copper diffusion | |
WO2003076678A3 (en) | Ald method and apparatus | |
EP1953809A3 (en) | Method for depositing metal films by CVD on diffusion barrier layers | |
JP2003531474A5 (en) | Conformal lining layer for damascene metallization | |
WO2002103782A3 (en) | Barrier enhancement process for copper interconnects | |
WO2003030224A3 (en) | Barrier formation using novel sputter-deposition method | |
EP1233448A3 (en) | Reliable interconnects with low via/contact resistance | |
TW200717709A (en) | A method for forming a ruthenium metal layer on a patterned substrate | |
EP0877421A3 (en) | Sputter deposition and annealing of copper alloy metallization M | |
JP2004536225A5 (en) | ||
AU2002217822A1 (en) | Electroless method of seed layer deposition, repair, and fabrication of cu interconnects | |
AU2003300263A1 (en) | A method for depositing a metal layer on a semiconductor interconnect structure | |
WO2002069380A3 (en) | Atomically thin highly resistive barrier layer in a copper via | |
WO2007066277A3 (en) | A method of forming a layer over a surface of a first material embedded in a second material in a structure for a semiconductor device | |
WO2002058115A3 (en) | Method for deposit copper on metal films | |
WO2002073689A3 (en) | Integrated barrier layer structure for copper contact level metallization |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2002821269X Country of ref document: CN Ref document number: 2003541048 Country of ref document: JP Ref document number: 1020047006190 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase |