WO2003031319A3 - Adhäsionsverminderte mikromechanische bauelemente - Google Patents
Adhäsionsverminderte mikromechanische bauelemente Download PDFInfo
- Publication number
- WO2003031319A3 WO2003031319A3 PCT/DE2002/003317 DE0203317W WO03031319A3 WO 2003031319 A3 WO2003031319 A3 WO 2003031319A3 DE 0203317 W DE0203317 W DE 0203317W WO 03031319 A3 WO03031319 A3 WO 03031319A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- components
- static friction
- micromechanical components
- reduced static
- micromechanical
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/016—Passivation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Es werden adhäsionsverminderte mikromechanische Bauelemente (4';40) rnit einer Größe von in der Regel weniger als 1 mn, derartige Bauelemente enthaltende Einrichtungen, die Herstellung und Verwendung dieser Bauelemente sowie ein Verfahren zur Behandlung der Oberflächen von mikromechanischen Bauelementen(4';40) bereitgestellt, wobei das Verfahren den Schritt umfasst, dass die elektronischen Störstellen des verwendeten Halbleitermaterials im Wege einer Oberflächenbehandlung verändert werden. Derartige Bauelemente werden beispielsweise in Beschleunigungssensoren verwendet.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10148864.5 | 2001-10-04 | ||
DE2001148864 DE10148864A1 (de) | 2001-10-04 | 2001-10-04 | Adhäsionsverminderte mikromechanische Bauelemente |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003031319A2 WO2003031319A2 (de) | 2003-04-17 |
WO2003031319A3 true WO2003031319A3 (de) | 2003-10-09 |
Family
ID=7701310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/003317 WO2003031319A2 (de) | 2001-10-04 | 2002-09-06 | Adhäsionsverminderte mikromechanische bauelemente |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE10148864A1 (de) |
WO (1) | WO2003031319A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006127776A1 (en) * | 2005-05-25 | 2006-11-30 | Northrop Grumman Corporation | Metal electrodes for elimination of spurious charge effects in accelerometers and other mems devices |
US7417784B2 (en) | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
JP2010525379A (ja) | 2007-04-04 | 2010-07-22 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 犠牲層における界面改変によるリリースエッチアタックの排除 |
US7738158B2 (en) | 2007-06-29 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | Electromechanical device treatment with water vapor |
US7851239B2 (en) | 2008-06-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
US5694740A (en) * | 1996-03-15 | 1997-12-09 | Analog Devices, Inc. | Micromachined device packaged to reduce stiction |
WO2001057920A1 (en) * | 2000-02-01 | 2001-08-09 | Analog Devices, Inc. | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor |
US6290859B1 (en) * | 1999-11-12 | 2001-09-18 | Sandia Corporation | Tungsten coating for improved wear resistance and reliability of microelectromechanical devices |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5476691A (en) * | 1994-01-21 | 1995-12-19 | International Business Machines, Inc. | Surface treatment of magnetic recording heads |
US6096149A (en) * | 1997-04-21 | 2000-08-01 | Ford Global Technologies, Inc. | Method for fabricating adhesion-resistant micromachined devices |
US6328903B1 (en) * | 2000-03-07 | 2001-12-11 | Sandia Corporation | Surface-micromachined chain for use in microelectromechanical structures |
-
2001
- 2001-10-04 DE DE2001148864 patent/DE10148864A1/de not_active Ceased
-
2002
- 2002-09-06 WO PCT/DE2002/003317 patent/WO2003031319A2/de not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5025346A (en) * | 1989-02-17 | 1991-06-18 | Regents Of The University Of California | Laterally driven resonant microstructures |
US5694740A (en) * | 1996-03-15 | 1997-12-09 | Analog Devices, Inc. | Micromachined device packaged to reduce stiction |
US6290859B1 (en) * | 1999-11-12 | 2001-09-18 | Sandia Corporation | Tungsten coating for improved wear resistance and reliability of microelectromechanical devices |
WO2001057920A1 (en) * | 2000-02-01 | 2001-08-09 | Analog Devices, Inc. | Process for wafer level treatment to reduce stiction and passivate micromachined surfaces and compounds used therefor |
Non-Patent Citations (5)
Title |
---|
ABE T ET AL: "Effects of elevated temperature treatments in microstructure release procedures", JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, JUNE 1995, USA, vol. 4, no. 2, pages 66 - 75, XP002247902, ISSN: 1057-7157 * |
KOMVOPOULOS K: "SURFACE ENGINEERING AND MICROTRIBOLOGY FOR MICROELECTROMECHNICAL SYSTEMS", WEAR, LAUSANNE, CH, vol. 200, 1996, pages 305 - 327, XP001090868 * |
LEGTENBERG R ET AL: "STICTION OF SURFACE MICROMACHINED STRUCTURES AFTER RINSING AND DRYING: MODEL AND INVESTIGATION OF ADHESION MECHANISMS", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A43, no. 1/3, 1 May 1994 (1994-05-01), pages 230 - 238, XP000454116, ISSN: 0924-4247 * |
SCHEEPER P R ET AL: "INVESTIGATION OF ATTRACTIVE FORCES BETWEEN PECVD SILICON NITRIDE MICROSTRUCTURES AND AN OXIDIZED SILICON SUBSTRATE", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A30, no. 3, 1 February 1992 (1992-02-01), pages 231 - 239, XP000277434, ISSN: 0924-4247 * |
SRINIVASAN U ET AL: "Self-assembled fluorocarbon films for enhanced stiction reduction", 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, TRANSDUCERS 97, CHICAGO, IL, JUNE 16 - 19, 1997. SESSIONS 3A1 - 4D3. PAPERS NO. 3A1.01 - 4D3.14P,, ISBN: 0-7803-3829-4, XP010240746 * |
Also Published As
Publication number | Publication date |
---|---|
DE10148864A1 (de) | 2003-04-17 |
WO2003031319A2 (de) | 2003-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002062527A8 (en) | Abrasive article suitable for modifying a semiconductor wafer | |
WO2003067657A3 (de) | Halbleiterbauteil mit sensor- bzw. aktoroberfläche und verfahren zu seiner herstellung | |
ATE391141T1 (de) | Schlagzähes polyharnstoffurethan und polyharnstoffurethan-präpolymer mit niedrigem nco/oh-verhältnis | |
TWI265747B (en) | Sealing structure for display devices | |
GB0128070D0 (en) | CMOS semiconductor device, and method of manufacturing the same | |
AU2002321815A1 (en) | Method and apparatus for process control in the semiconductor manufacturing | |
EP1120818A4 (de) | Halbleitersubstrat und seine herstellung, halbleiteranordnung auf diesem substrat und dessen herstellung | |
HK1034805A1 (en) | Chip scale surface mount package for semiconductordevice and process of fabricating the same. | |
AU2002345544A8 (en) | Method of immobilizing a biologic in a polyurethane-hydrogel composition, a composition prepared from the method, and biomedical applications | |
SG121715A1 (en) | Semiconductor device and method of manufacturing the same | |
AU2002367179A1 (en) | Substrate treating method and production method for semiconductor device | |
SG115478A1 (en) | Thin film transistor and method for manufacturing the same | |
WO2002102586A3 (en) | Cellulose-polymer composites and methods for manufacturing same | |
AU2002349581A1 (en) | Semiconductor device and manufacturing method thereof | |
EP1443544A3 (de) | Halbleitersubstrat, sein Herstellungsverfahren und Verfahren zur Herstellung eines Halbleiterbauelements | |
WO2001029881A3 (en) | Method of making an optoelectronic device using multiple etch stop layers | |
WO2003031319A3 (de) | Adhäsionsverminderte mikromechanische bauelemente | |
WO2003014242A1 (fr) | Bande recouverte d'un double adhesif et procede de fabrication de puce pour circuit integre utilisant cette bande | |
WO2003050137A3 (en) | Toll-like receptor 4 mutations | |
AU2002352939A1 (en) | Integrated passive devices formed by demascene processing | |
WO2004082018A3 (de) | Elektronisches bauteil mit halbleiterchip und kunststoffgehäuse und verfahren zur herstellung desselben | |
EP1193744A4 (de) | Verstärkungsmaterial für siliziumscheiben und herstellungsmethode für ic chips unter verwendung des verstärkungsmaterials | |
AU2002247762A1 (en) | Processor arrangement for security-related applications and method for carrying out security-related applications | |
EP1375704A4 (de) | Diamantsubstrat mit dünnem piezoelektrischen film und verfahren zu seiner herstellung | |
EP1135004A3 (de) | Material für elektrolumineszente Vorrichtung und elektrolumineszente Vorrichtung damit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |