WO2003027002A3 - Procede pour la production d'une structure micromecanique - Google Patents

Procede pour la production d'une structure micromecanique Download PDF

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Publication number
WO2003027002A3
WO2003027002A3 PCT/DE2002/002111 DE0202111W WO03027002A3 WO 2003027002 A3 WO2003027002 A3 WO 2003027002A3 DE 0202111 W DE0202111 W DE 0202111W WO 03027002 A3 WO03027002 A3 WO 03027002A3
Authority
WO
WIPO (PCT)
Prior art keywords
micromechanical structure
micromechanical
production
opposed
temperature range
Prior art date
Application number
PCT/DE2002/002111
Other languages
German (de)
English (en)
Other versions
WO2003027002A2 (fr
Inventor
Frank Fischer
Lars Metzger
Original Assignee
Bosch Gmbh Robert
Frank Fischer
Lars Metzger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10142952A external-priority patent/DE10142952A1/de
Application filed by Bosch Gmbh Robert, Frank Fischer, Lars Metzger filed Critical Bosch Gmbh Robert
Publication of WO2003027002A2 publication Critical patent/WO2003027002A2/fr
Publication of WO2003027002A3 publication Critical patent/WO2003027002A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

L'invention concerne un procédé pour la production d'une structure micromécanique. Le procédé selon l'invention comprend les étapes suivantes : on met à disposition une structure micromécanique comprenant une premier élément de structure micromécanique (MS) constitué d'un premier matériau et un deuxième élément de structure micromécanique (OS) constitué d'un deuxième matériau ; on achemine un milieu de gravure gazeux (G) au-dessus de la structure micromécanique, le milieu de gravure (G) étant tel qu'il grave sélectivement le deuxième matériau par rapport au premier matériau dans une première plage de température supérieure à la température ambiante ; on porte la structure micromécanique à la première plage de température pour la gravure sélective du deuxième matériau par rapport au premier.
PCT/DE2002/002111 2001-09-01 2002-06-10 Procede pour la production d'une structure micromecanique WO2003027002A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10142952A DE10142952A1 (de) 2001-06-13 2001-09-01 Herstellungsverfahren für eine mikromechanische Struktur
DE10142952.5 2001-09-01

Publications (2)

Publication Number Publication Date
WO2003027002A2 WO2003027002A2 (fr) 2003-04-03
WO2003027002A3 true WO2003027002A3 (fr) 2003-10-16

Family

ID=7697428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002111 WO2003027002A2 (fr) 2001-09-01 2002-06-10 Procede pour la production d'une structure micromecanique

Country Status (1)

Country Link
WO (1) WO2003027002A2 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
WO2000042231A2 (fr) * 1999-01-15 2000-07-20 The Regents Of The University Of California Films de polysilicium-germanium permettant de realiser des systemes micro-electromecaniques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US6060336A (en) * 1998-12-11 2000-05-09 C.F. Wan Incorporated Micro-electro mechanical device made from mono-crystalline silicon and method of manufacture therefore
WO2000042231A2 (fr) * 1999-01-15 2000-07-20 The Regents Of The University Of California Films de polysilicium-germanium permettant de realiser des systemes micro-electromecaniques

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBA Y ET AL: "PATTERN FABRICATION TECHNIQUE FOR TA-GE AMORPHOUS X-RAY ABSORBER ONA SIC MEMBRANE BY INDUCTIVELY COUPLED PLASMA", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 38, no. 4A, PART 1, April 1999 (1999-04-01), pages 2164 - 2168, XP000906668, ISSN: 0021-4922 *
KAMINS T I ET AL: "INFLUENCE OF HCI ON THE CHEMICAL VAPOR DEPOSITION AND ETCHING OF GEISLANDS ON SI(001)", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 13, 28 September 1998 (1998-09-28), pages 1862 - 1864, XP000784180, ISSN: 0003-6951 *
LI B ET AL: "APPLICATIONS OF GERMANIUM TO LOW TEMPERATURE MICRO-MACHINING", TECHNICAL DIGEST OF THE IEEE INTERNATIONAL MEMS '99 CONFERENCE. 12TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. ORLANDO, FL, JAN. 17 - 21, 1999, IEEE INTERNATIONAL MICRO ELECTRO MECHANICAL SYSTEMS CONFERENCE, NEW YORK, NY: IEE, 1999, pages 638 - 643, XP000830821, ISBN: 0-7803-5195-9 *

Also Published As

Publication number Publication date
WO2003027002A2 (fr) 2003-04-03

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