WO2003018870A3 - Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung - Google Patents
Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung Download PDFInfo
- Publication number
- WO2003018870A3 WO2003018870A3 PCT/DE2002/003131 DE0203131W WO03018870A3 WO 2003018870 A3 WO2003018870 A3 WO 2003018870A3 DE 0203131 W DE0203131 W DE 0203131W WO 03018870 A3 WO03018870 A3 WO 03018870A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- area
- plasma source
- substrates
- vacuum chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02760136A EP1421227A2 (de) | 2001-08-24 | 2002-08-23 | Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2001141142 DE10141142B4 (de) | 2001-08-24 | 2001-08-24 | Einrichtung zur reaktiven Plasmabehandlung von Substraten und Verfahren zur Anwendung |
DE10141142.1 | 2001-08-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003018870A2 WO2003018870A2 (de) | 2003-03-06 |
WO2003018870A3 true WO2003018870A3 (de) | 2003-05-22 |
Family
ID=7696245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/003131 WO2003018870A2 (de) | 2001-08-24 | 2002-08-23 | Einrichtung zur reaktiven plasmabehandlung von substraten und verfahren zur anwendung |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1421227A2 (de) |
DE (1) | DE10141142B4 (de) |
WO (1) | WO2003018870A2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102007565A (zh) * | 2009-03-17 | 2011-04-06 | 德国罗特·劳股份有限公司 | 基片处理***和基片处理方法 |
DE102010060910A1 (de) * | 2010-11-30 | 2012-05-31 | Roth & Rau Ag | Verfahren und Vorrichtung zur Ionenimplantation |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6244574A (ja) * | 1985-08-20 | 1987-02-26 | Fujitsu Ltd | 化学気相成長方法 |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
JPH04325687A (ja) * | 1991-04-26 | 1992-11-16 | Nippon Seisan Gijutsu Kenkyusho:Kk | ライン式プラズマcvd装置 |
US5976258A (en) * | 1998-02-05 | 1999-11-02 | Semiconductor Equipment Group, Llc | High temperature substrate transfer module |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6170428B1 (en) * | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
DE19853121C1 (de) * | 1998-11-18 | 2000-02-24 | Poll Hans Ulrich | Verfahren und Einrichtung zur Behandlung eines Substrates in einem Hochfrequenzplasma und Anwendung der Einrichtung |
EP1020892B1 (de) * | 1999-01-14 | 2004-08-18 | Vlaamse Instelling Voor Technologisch Onderzoek (Vito) | Vorrichtung zum Aufbringen von Beschichtungen auf ein Substrat durch eine induktiv-angekoppelte magnetisch-begrenzte Plasmaquelle |
DE19955671B4 (de) * | 1999-11-19 | 2004-07-22 | Muegge Electronic Gmbh | Vorrichtung zur Erzeugung von Plasma |
-
2001
- 2001-08-24 DE DE2001141142 patent/DE10141142B4/de not_active Expired - Fee Related
-
2002
- 2002-08-23 WO PCT/DE2002/003131 patent/WO2003018870A2/de not_active Application Discontinuation
- 2002-08-23 EP EP02760136A patent/EP1421227A2/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6244574A (ja) * | 1985-08-20 | 1987-02-26 | Fujitsu Ltd | 化学気相成長方法 |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
JPH04325687A (ja) * | 1991-04-26 | 1992-11-16 | Nippon Seisan Gijutsu Kenkyusho:Kk | ライン式プラズマcvd装置 |
US5976258A (en) * | 1998-02-05 | 1999-11-02 | Semiconductor Equipment Group, Llc | High temperature substrate transfer module |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 011, no. 232 (C - 437) 29 July 1987 (1987-07-29) * |
PATENT ABSTRACTS OF JAPAN vol. 017, no. 167 (C - 1043) 31 March 1993 (1993-03-31) * |
Also Published As
Publication number | Publication date |
---|---|
EP1421227A2 (de) | 2004-05-26 |
WO2003018870A2 (de) | 2003-03-06 |
DE10141142B4 (de) | 2004-11-11 |
DE10141142A1 (de) | 2003-03-27 |
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