WO2003015170A1 - Semiconductor device and its production method - Google Patents

Semiconductor device and its production method Download PDF

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Publication number
WO2003015170A1
WO2003015170A1 PCT/JP2002/005793 JP0205793W WO03015170A1 WO 2003015170 A1 WO2003015170 A1 WO 2003015170A1 JP 0205793 W JP0205793 W JP 0205793W WO 03015170 A1 WO03015170 A1 WO 03015170A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory cell
lower electrode
film
oxygen
improved
Prior art date
Application number
PCT/JP2002/005793
Other languages
French (fr)
Japanese (ja)
Inventor
Tetsuo Fujiwara
Saigou Yamazumi
Hiromichi Waki
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Publication of WO2003015170A1 publication Critical patent/WO2003015170A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Abstract

The oxygen barrier properties of a lower electrode of an FeRAM memory cell is improved, the yield of the memory cell is thereby improved, and the characteristics of the memory cell is also improved. A Pt (platinum) film to serve as a lower electrode (10a) of a capacitor (C) of an FeRAM memory cell is deposited on a barrier layer (B1a) made of an alloy of Al (aluminum) and Ir (iridium). An annealing treatment (heat treatment) at 500 to 700 °C in an oxygen-containing atmosphere is conducted after the Pt film deposition. As a result, Al2O3 (aluminum oxide) is formed at the grain boundaries of Pt crystals in the Pt film composed of crystal grains. Therefore, ever if, e.g., an annealing treatment in an oxygen atmosphere is conducted thereafter for crystallizing the PZP film to serve as a capacitor insulating film (11a), oxygen is prevented from entering the lower electrode (10a), the barrier layer (B1a) under the lower electrode (10a), and a plug (P1) underlying the barrier layer.
PCT/JP2002/005793 2001-08-07 2002-06-11 Semiconductor device and its production method WO2003015170A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001239711A JP2003051582A (en) 2001-08-07 2001-08-07 Semiconductor device and its manufacturing method
JP2001-239711 2001-08-07

Publications (1)

Publication Number Publication Date
WO2003015170A1 true WO2003015170A1 (en) 2003-02-20

Family

ID=19070417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005793 WO2003015170A1 (en) 2001-08-07 2002-06-11 Semiconductor device and its production method

Country Status (2)

Country Link
JP (1) JP2003051582A (en)
WO (1) WO2003015170A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4800627B2 (en) * 2004-03-24 2011-10-26 セイコーエプソン株式会社 Ferroelectric memory device
JP2006005234A (en) 2004-06-18 2006-01-05 Seiko Epson Corp Semiconductor device and method of manufacturing the same
JP4913994B2 (en) * 2004-08-09 2012-04-11 セイコーエプソン株式会社 Ferroelectric capacitor, ferroelectric memory, ferroelectric capacitor manufacturing method, and ferroelectric memory manufacturing method
JP2006222389A (en) 2005-02-14 2006-08-24 Toshiba Corp Semiconductor storage device and manufacturing method thereof
JP4957720B2 (en) * 2006-03-10 2012-06-20 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
WO2007110961A1 (en) * 2006-03-29 2007-10-04 Fujitsu Limited Semiconductor device and method for manufacturing the same
JP5205741B2 (en) 2006-11-14 2013-06-05 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0725428A2 (en) * 1995-01-13 1996-08-07 International Business Machines Corporation Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
US5858551A (en) * 1997-01-31 1999-01-12 Seydel Research, Inc. Water dispersible/redispersible hydrophobic polyester resins and their application in coatings
JPH11204743A (en) * 1998-01-13 1999-07-30 Oki Electric Ind Co Ltd Ferroelectric memory electrode and its forming method
JP2000040799A (en) * 1998-07-24 2000-02-08 Toshiba Corp Semiconductor device and manufacture thereof
JP2001036026A (en) * 1999-05-14 2001-02-09 Toshiba Corp Semiconductor device and manufacture thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0725428A2 (en) * 1995-01-13 1996-08-07 International Business Machines Corporation Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
US5858551A (en) * 1997-01-31 1999-01-12 Seydel Research, Inc. Water dispersible/redispersible hydrophobic polyester resins and their application in coatings
JPH11204743A (en) * 1998-01-13 1999-07-30 Oki Electric Ind Co Ltd Ferroelectric memory electrode and its forming method
JP2000040799A (en) * 1998-07-24 2000-02-08 Toshiba Corp Semiconductor device and manufacture thereof
JP2001036026A (en) * 1999-05-14 2001-02-09 Toshiba Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JP2003051582A (en) 2003-02-21

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